CN107790894A - A kind of laser cutting system and method - Google Patents
A kind of laser cutting system and method Download PDFInfo
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- CN107790894A CN107790894A CN201610769563.6A CN201610769563A CN107790894A CN 107790894 A CN107790894 A CN 107790894A CN 201610769563 A CN201610769563 A CN 201610769563A CN 107790894 A CN107790894 A CN 107790894A
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- laser
- hot spot
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- cutting
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/04—Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
- B23K26/046—Automatically focusing the laser beam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/083—Devices involving movement of the workpiece in at least one axial direction
- B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
- B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
Abstract
The present invention relates to a kind of laser cutting system and method, the system includes：Laser, for providing laser；Beam shaping focus module, hot spot is expanded and formed for laser, and the hot spot is focused on into crystal column surface；Longitudinal P ZT drive control platforms, for driving the wafer or the beam shaping focus module to do longitudinal simple harmonic motion；And it is horizontal to work stage, it is horizontal to motion for driving the wafer to do.The present invention using it is horizontal to work stage realize wafer level to high speed dynamic scan while, make the focal depth position of hot spot vertically extending using longitudinal P ZT drive control platforms, relative to focal position in the prior art in the vertical static depth of focus extension method not changed, the present invention substantially increases laser cutting efficiency on the basis of mechanism complexity is not increased.
Description
Technical field
The present invention relates to field of semiconductor processing, more particularly to a kind of laser cutting system and side for wafer cutting
Method.
Background technology
In field of semiconductor processing, semiconductor devices batch micro operations generally on wafer are completed, after wafer machines,
Need the device isolation on wafer into chip one by one.At present, the cutting mode of wafer has traditional mechanical cutting
(such as crusher), the mode such as ion etching and laser cutting.
Wherein, the Cutting Road of crusher cutting is wider, easily causes chipping and crackle when cutting thin wafer.In addition, work
Low-k (low-k) material, the ductility having due to these materials and relatively low are more and more used in skill processing procedure
Adhesiveness so that it is extremely difficult during cutting, easily cause crackle and the layering of cutting zone, while blade can be wrapped up again and caused
Breaking, so the applicability of crusher cutting is worse and worse.
And the cost of ion etching is higher, and process is more complicated exposes base material, it is necessary to first scratch the material on top layer, so
Afterwards deep etching is carried out with ion.
For laser cutting, with the continuous lifting of laser technique, also more studied and applied gradually.Laser
Cutting is to focus the laser beam into wafer material surface or inside, and material absorbs photon and passes through a series of changes, finally makes
Material is obtained to remove or be modified.But long pulse width is different with short pulse or the laser of ultra-short pulse width, both mechanisms of action.
Long pulse width be cut by laser when, material mainly absorb photon energy and by by way of melting and gasifying on material shape
Into Cutting Road, and certain heat affected area (HAZ, Heat affected zone) is produced in Cutting Road both sides；And short pulse or
When ultra-short pulse laser is cut, within the pulse duration, material can not gather enough heats so that melting, on the contrary because short
Pulse or the high-peak power of ultra-short pulse laser, make material produce plasma, plasma accumulation to a certain extent when with
The form of " coulomb blast " takes away material, or according to the Multiphoton Absorbtion mechanism of action so that material internally produce physics or
Chemical structure modification, produce slight void.Due in short pulse or ultra-short pulse laser mechanism, caused fuel factor compared with
It is few, also often it is referred to as " cold working ".
Either Long Pulse LASER cutting or short pulse or ultra-short pulse laser cutting, in cutting process, in face of thickness
Spend for hundreds of microns wafer or millimeter magnitude other baseplate materials when, because depth of focus limitation exist depth of cut deficiency lack
Point.Existing laser cutting depth of focus extension method mainly has two kinds：First method as shown in Figure 1a, first, send out by amasthenic lens 2
Go out laser beam 3, the focus of the laser beam 3 is located at a certain depth of baseplate material 1, and then Substrate table horizontally scans completion and cut
After cutting, regulation focus to second position (dotted portion in Fig. 1 a), continuation horizontally scans, and is that one kind is progressively adjusted along longitudinal direction
Burnt method；As shown in Figure 1 b, the top of baseplate material 1 sets multiple amasthenic lens 2,4 to second method, sends laser beam respectively
3rd, 5, the focal adjustments of the two are fixed on the different depth of baseplate material 1, then carry out horizontal direction scanning.Both the above method
The depth of focus extension method of static state can be summarized as, i.e., baseplate material is in level to during scanning, and focal position is constant, and depth of focus does not prolong
Stretch.The method of this static depth of focus extension is either less efficient or structure is numerous and diverse.
The content of the invention
The present invention provides a kind of laser cutting system and method, to solve above-mentioned technical problem.
In order to solve the above technical problems, the present invention provides a kind of laser cutting system, including：
Laser, for providing laser；
Beam shaping focus module, hot spot is expanded and formed for laser, and the hot spot is focused on into crystal column surface；
Zigzag tread patterns console, for driving the wafer or the beam shaping focus module to do longitudinal simple harmonic motion；
And
Level is horizontal to motion for driving the wafer to do to work stage.
It is preferred that the zigzag tread patterns console is longitudinal P ZT drive control platforms, the beam shaping focus module is fixed on
On, or be fixed on described horizontal in work stage.
It is preferred that the hot spot that the beam shaping focus module is formed is single-spot, horizontal multifocal beam array
Or strip hot spot.
It is preferred that the periphery of the wafer is provided with the auxiliary cutting material of ring-type.
It is preferred that the thickness of the auxiliary cutting material is identical with the thickness of the wafer, the auxiliary cuts material along level
To length of the length with the hot spot horizontally it is identical.
Present invention also offers a kind of laser cutting method, launches laser using a laser, the laser is whole through light beam
Shape focus module forms hot spot after being expanded, the hot spot focuses on crystal column surface, and the wafer or the beam shaping gather
Burnt module does longitudinal simple harmonic motion, and the wafer does level to motion simultaneously, described horizontal to motion and longitudinal simple harmonic quantity fortune
Dynamic combination forms oblique movement, forms triangular waveform scanning track of the laser in the wafer.
It is preferred that the hot spot, within the time of longitudinal round trip, the hot spot is less than in level to the distance of motion
Equal to the length of the hot spot horizontally.
It is preferred that the periphery of the wafer is provided with the auxiliary cutting material of ring-type, the non-scanning area that order scanning edge is formed
Fall within the auxiliary cutting material with scanning intensity non-uniform areas, remove the auxiliary cutting material after the completion of cutting.
It is preferred that the thickness of the auxiliary cutting material is identical with the thickness of the wafer, the auxiliary cuts material along level
To length of the length with the hot spot horizontally it is identical.
It is preferred that the hot spot that the beam shaping focus module is formed is single-spot, horizontal multifocal beam array
Or strip hot spot.
Compared with prior art, laser cutting system provided by the invention and method have the following advantages that：
1. the present invention using it is horizontal to work stage realize wafer level to dynamic scan while, utilize longitudinal P ZT drivings
Console makes the focal depth position of hot spot vertically extending, substantially increases laser cutting efficiency；
2. the present invention utilizes horizontal multifocal beam array or strip hot spot, it is ensured that the integrality of scanning area, together
When improve the speed of scanning；
3. cutting material in the auxiliary of wafer periphery increase ring-type, the non-scanning area of crystal round fringes very small region is stretched out
Onto auxiliary cutting material, ensure the scanning integrality of wafer area, improve cut quality.
Brief description of the drawings
Fig. 1 a and 1b are respectively the schematic diagram of depth of focus extension method in existing laser cutting；
Fig. 2 is optical maser wavelength and the relation schematic diagram of wafer material absorption coefficient；
Fig. 3 a and 3b are respectively the structural representation of laser cutting system in the embodiment of the present invention one；
When Fig. 4 is that hot spot is single-spot in the embodiment of the present invention one, the schematic diagram of scanning pattern；
When Fig. 5 is that hot spot is horizontal multifocal beam array in the embodiment of the present invention one, the schematic diagram of scanning pattern；
When Fig. 6 is that hot spot is strip hot spot in the embodiment of the present invention one, the schematic diagram of scanning pattern；
Fig. 7 is the approximation schematic diagram for scanning to obtain in the embodiment of the present invention one；
Fig. 8 a and 8b are respectively the structural representation of laser cutting system in the embodiment of the present invention two；
Fig. 9 is the approximation schematic diagram for scanning to obtain in the embodiment of the present invention three；
Figure 10 is auxiliary cutting material and wafer position relation top view in the embodiment of the present invention three.
In Fig. 1 a and 1b：1- baseplate materials, 2,4- amasthenic lens, 3,5- laser beams；
In Fig. 3 a-10：10- lasers, 20- beam shapings focus module, 21- single-spots, 22- transverse direction multifocal light beam battle arrays
Row, 23- strips hot spot, 30- wafers, 31- scanning areas, the non-scanning areas of 32-, 33- scanning intensity non-uniform areas, 40- longitudinal directions
PZT drive controls platform, 50- levels are expected to work stage, 60- auxiliary cuttings.
Embodiment
In order to facilitate the understanding of the purposes, features and advantages of the present invention, below in conjunction with the accompanying drawings to the present invention
Embodiment be described in detail.It should be noted that accompanying drawing of the present invention uses using simplified form and non-essence
Accurate ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
Embodiment one
Laser cutting system provided by the invention, as best shown in figures 3 a and 3b, including：
Laser 10, for providing the laser needed for processing；
Beam shaping focus module 20, hot spot is expanded and formed for laser, and the hot spot is focused on into wafer 30
Surface, in other words, the beam shaping focus module 20, which has, realizes that beam expander, formation diffraction pattern and light beam focus on
Function；
Longitudinal P ZT (piezoelectric ceramics) drive controls platform 40, for driving the wafer 30 to do longitudinal simple harmonic motion；And
Level is horizontal to motion for driving the wafer 30 to do to work stage 50.
In the present invention, using level to work stage 50 realize the level of wafer 30 to high speed dynamic scan while, using vertical
Make the focal depth position of hot spot vertically extending to PZT drive controls platform 40, so as to greatly improve laser cutting efficiency.
It should be noted that the necessary condition that the present invention can realize is：The wavelength for the laser that laser 10 is sent possesses
The ability of wafer 30 is penetrated, i.e., the material of wafer 30 is relative to the transparent state of optical maser wavelength.Fig. 2 is optical maser wavelength and target material
Expect the relation schematic diagram of absorption coefficient, sign is penetration capacity of the different wave length in target material.When target material is all
During the non-transparent material as silicon (i.e. the material of wafer 30 is silicon), it can be seen from Fig. 2, then need to select wavelength more than 1um's
Infrared laser.
It is preferred that please continue to refer to Fig. 3 a and 3b, the longitudinal P ZT drive controls platform 40 in the present embodiment is fixed on institute
State horizontal in work stage 50, wafer 30 carries out horizontal to moving and catenary motion simultaneously, then the fixed hot spot in position exists
Wafer 30 is cut with the movement locus of periodic triangular wave form on wafer 30.
It is preferred that asking emphasis, with reference to figure 4 to Fig. 6, the hot spot that the beam shaping focus module 20 is formed can be
Single-spot 21, horizontal multifocal beam array 22 or strip hot spot 23, wherein Fig. 3 a are that hot spot uses horizontal multifocal
During beam array 22, the schematic diagram of laser cutting system；And Fig. 3 b then for hot spot use strip hot spot 23 when, be cut by laser
The schematic diagram of system.
Please emphasis with reference to figure 4, hot spot is single-spot 21 in figure, and wafer 30 is moved with the direction of solid arrow in scheming, monochromatic light
Spot 21 is cut in wafer 30 with the movement locus of dotted arrow.The generally longitudinally maximum resonance of PZT drive controls platform 40
Frequency is 1kHz or so, and when stroke is 100um, the sweep speed for converting to obtain is 100mm/s.The maximum of existing XY sports platforms
Speed can reach 1~2m/s, and cutting the speed of needs at least also needs to reach 100mm/s.When level is also to sweep speed
During 100mm/s, it is horizontal to movement velocity and catenary motion speed be same magnitude.Therefore, in cutting process, it is horizontal to it is vertical
All keep motion state, then in wafer 30 caused Cutting Road be unlikely to be completely either vertically or horizontally to movement locus, but
There is periodic triangular waveform movement locus as shown in Figure 4.
When single-spot 21 is within the vertically round trip time, the distance horizontally moved is less than or equal to the single-spot
During 21 diameter, it is possible to achieve the quasi- all standing of wafer 30 scanning, but need maintenance level to low-velocity scanning；When keep level to
When speed is high speed, although depth of focus is extended, large stretch of non-scanning area 32 (refer to Fig. 7), scanning area 31 are also left
Integrality it is much insufficient, be unable to reach the common cutting effect progressively focused.
Please emphasis with reference to figure 5, hot spot is horizontal multifocal beam array 22 in figure, the horizontal multifocal beam array 22
In each light beam when independently analyzing, its scanning pattern is consistent with Fig. 4.When number of beams is n in horizontal multifocal beam array 22,
And from first light beam to the radial direction overall length n-th of light beam be L, horizontal multifocal beam array 22 is being swept as an entirety
The region covered during retouching greatly increases, and works as horizontal multifocal beam array 22 within the vertical round trip time, edge
It is horizontal to the distance of motion be less than or equal to L when, the quasi- all standing that high speed can be achieved scans.Which solves single-spot 21 and longitudinal direction
When PZT drive controls platform 40 combines, it is ensured that scanning area is complete, can only be by reducing the problem of sweep speed is to realize.It please weigh
Point refers to figure 6, is to change horizontal multifocal beam array 22 into the result signal that strip hot spot 23 is scanned, effect in figure
It is more obvious.
The present invention utilizes horizontal multifocal beam array 22 or strip hot spot 23 and the phase knot of longitudinal P ZT drive controls platform 40
To close, scanning obtains approximation schematic diagram as shown in Figure 7, wherein, middle major part is scanning area 31, and both sides respectively have one or three
Angular non-scanning area 32.It can be seen that, horizontal multifocal beam array 22 or strip hot spot 23 are utilized from Fig. 5 and Fig. 6
The method being combined with longitudinal P ZT drive controls platform 40, the non-scanning area 32 in part is still suffered from the two edges of wafer 30, but it is actual
The horizontal direction length of wafer 30 is far longer than vertical thickness, and this subregion is several the percent of very little in the entity of wafer 30
One part, does not interfere with cutting result substantially.
In the present embodiment, the horizontal speed to work stage 50 and the resonance under 40 certain stroke of longitudinal P ZT drive controls platform
Relation between frequency can influence the size in entire scan area 31, and longitudinal P ZT drive controls 40 resonant frequencies of platform are bigger, namely necessarily
Speed under stroke is faster, and the horizontal speed to work stage 50 is smaller, can obtain bigger laser scanning area 31.
Present invention also offers a kind of laser cutting method, launches laser using a laser 10, the laser is through light beam
Shaping focus module 20 forms hot spot after being expanded, the hot spot focuses on the surface of wafer 30, the wafer 30 or the light
Beam shaping focus module 20 does longitudinal simple harmonic motion, and the wafer 30 does level to motion simultaneously, described horizontal to motion and institute
State longitudinal simple harmonic motion to combine to form oblique movement, form triangular waveform scanning track of the laser in the wafer 30.This hair
The laser cutting method of bright offer, it can dynamically increase depth of focus in scanning process, to improve the efficiency of laser cutting.
It is preferred that please continue to refer to Fig. 4 to Fig. 6, the hot spot that the beam shaping focus module 20 is formed is monochromatic light
Spot 21, horizontal multifocal beam array 22 or strip hot spot 23, any one above-mentioned described hot spot is in longitudinal round trip
Time in, the hot spot is less than or equal to the length of the hot spot horizontally in level to the distance of motion, to ensure wafer
30 quasi- all standing scanning.
Embodiment two
Due to only needing wafer 30 to do relative longitudinal simple harmonic motion relative to hot spot, then coordinate the horizontal to motion of wafer 30
The required movement locus of the present invention can be achieved, therefore the longitudinal P ZT drive controls platform 40 is securable to the level to work
On part platform 50, it can also be fixed in the beam shaping focus module 20 as shown in figs. 8 a and 8b and drive beam shaping to focus on mould
The catenary motion of block 20, it can reach and be cut by laser effect with the identical of embodiment one.
Embodiment three
Please emphasis be with reference to figure 9 and Figure 10, the present embodiment and the difference of embodiment one and two：The periphery of the wafer 30
Auxiliary cutting material 60 provided with ring-type.Specifically, after the completion of scanning, the outside of wafer 30 can have non-scanning area 32, and because of weight
Folded number is different, and scanning intensity is less than the scanning intensity non-uniform areas 33 in interscan area 31, but the two regions are only
It is more than one the percent of the region of whole wafer 30, cutting result will not be had an impact substantially, if the cutting to whole wafer 30
, can be uneven by the non-scanning area 32 in the former outside of wafer 30 and scanning intensity by aiding in cutting material 60 when having higher requirements
Region 33 extends outward, that is to say, that during scanning, non-scanning area 32 and the uneven area of scanning intensity that order scanning edge is formed
Domain 33 is fallen within the auxiliary cutting material 60, is removed the auxiliary cutting material 60 after the completion of cutting so that the full section of wafer 30 is equal
Fall into scanning area 31, so as to obtain the scanning of complete and uniform strength.
It is preferred that asking emphasis, with reference to figure 10, when the wafer 30 is circular, the auxiliary cutting material 60 is with donut
Mode be nested in the outside of wafer 30, specifically, the thickness of the auxiliary cutting material 60 is identical with the thickness of the wafer 30, institute
It is identical to state length of auxiliary cutting 60 length horizontally of material with the hot spot horizontally, it is ensured that while cutting effect,
The waste of material and the energy will not be caused.
In summary, laser cutting system provided by the invention and method, the system include：Laser 10, for providing
Laser；Beam shaping focus module 20, hot spot is expanded and formed for laser, and the hot spot is focused on into the table of wafer 30
Face；Longitudinal P ZT drive controls platform 40, for driving the wafer 30 or the beam shaping focus module 20 to do longitudinal simple harmonic quantity fortune
It is dynamic；And it is horizontal to work stage 50, it is horizontal to motion for driving the wafer 30 to do.The present invention is using horizontal to work stage 50
While the level of wafer 30 is realized to high speed dynamic scan, the focal depth position edge of hot spot is made using longitudinal P ZT drive controls platform 40
Vertical extension, exist relative to focal position in the prior art in the vertical static depth of focus extension method not changed, the present invention
On the basis of not increasing mechanism complexity, laser cutting efficiency is substantially increased.
Obviously, those skilled in the art can carry out the spirit of various changes and modification without departing from the present invention to invention
And scope.So, if these modifications and variations of the present invention belong to the claims in the present invention and its equivalent technologies scope it
Interior, then the present invention is also intended to including these changes and modification.
Claims (10)
- A kind of 1. laser cutting system, it is characterised in that including：Laser, for providing laser；Beam shaping focus module, hot spot is expanded and formed for laser, and the hot spot is focused on into crystal column surface；Zigzag tread patterns console, for driving the wafer or the beam shaping focus module to do longitudinal simple harmonic motion；AndLevel is horizontal to motion for driving the wafer to do to work stage.
- 2. laser cutting system as claimed in claim 1, it is characterised in that the zigzag tread patterns console drives for longitudinal P ZT Dynamic console, is fixed in the beam shaping focus module, or is fixed on described horizontal in work stage.
- 3. laser cutting system as claimed in claim 1, it is characterised in that the beam shaping focus module is formed described Hot spot is single-spot, horizontal multifocal beam array or strip hot spot.
- 4. laser cutting system as claimed in claim 1, it is characterised in that the auxiliary that the periphery of the wafer is provided with ring-type is cut Material cutting.
- 5. laser cutting system as claimed in claim 4, it is characterised in that the thickness and the wafer of the auxiliary cutting material Thickness it is identical, the auxiliary cutting material length of the length with the hot spot horizontally horizontally is identical.
- 6. a kind of laser cutting method, it is characterised in that laser is launched using a laser, the laser focuses on through beam shaping Module forms hot spot after being expanded, the hot spot focuses on crystal column surface, the wafer or the beam shaping focus module Longitudinal simple harmonic motion is done, the wafer does level to motion simultaneously, described horizontal to motion and longitudinal simple harmonic motion combination Oblique movement is formed, forms triangular waveform scanning track of the laser in the wafer.
- 7. laser cutting method as claimed in claim 6, it is characterised in that time of the hot spot in longitudinal round trip Interior, the hot spot is less than or equal to the length of the hot spot horizontally in level to the distance of motion.
- 8. laser cutting method as claimed in claim 6, it is characterised in that the auxiliary that the periphery of the wafer is provided with ring-type is cut Material cutting, the non-scanning area and scanning intensity non-uniform areas that order scanning edge is formed are fallen within the auxiliary cutting material, cutting After the completion of by it is described auxiliary cutting material remove.
- 9. laser cutting method as claimed in claim 8, it is characterised in that the thickness and the wafer of the auxiliary cutting material Thickness it is identical, the auxiliary cutting material length of the length with the hot spot horizontally horizontally is identical.
- 10. laser cutting method as claimed in claim 6, it is characterised in that the institute that the beam shaping focus module is formed It is single-spot, horizontal multifocal beam array or strip hot spot to state hot spot.
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| CN201610769563.6A CN107790894B (en) | 2016-08-30 | 2016-08-30 | A kind of laser cutting system and method |
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| CN201610769563.6A CN107790894B (en) | 2016-08-30 | 2016-08-30 | A kind of laser cutting system and method |
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|---|---|---|---|---|
| JP2007021556A (en) * | 2005-07-20 | 2007-02-01 | Seiko Epson Corp | Laser beam irradiation apparatus and laser beam scribing method |
| JP2012054273A (en) * | 2010-08-31 | 2012-03-15 | Disco Abrasive Syst Ltd | Wafer processing method |
| CN104416449A (en) * | 2013-08-19 | 2015-03-18 | 株式会社迪思科 | Processing apparatus |
| JP2015088515A (en) * | 2013-10-28 | 2015-05-07 | 株式会社ディスコ | Processing device |
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| CN107790894B (en) | 2019-06-25 |
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