CN107785666A - H faces electromagnetic horn based on SIW technologies - Google Patents
H faces electromagnetic horn based on SIW technologies Download PDFInfo
- Publication number
- CN107785666A CN107785666A CN201610716994.6A CN201610716994A CN107785666A CN 107785666 A CN107785666 A CN 107785666A CN 201610716994 A CN201610716994 A CN 201610716994A CN 107785666 A CN107785666 A CN 107785666A
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- Prior art keywords
- siw
- microstrip line
- row
- electromagnetic
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q13/00—Waveguide horns or mouths; Slot antennas; Leaky-waveguide antennas; Equivalent structures causing radiation along the transmission path of a guided wave
- H01Q13/02—Waveguide horns
- H01Q13/0275—Ridged horns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
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- Waveguide Aerials (AREA)
Abstract
The invention discloses a kind of H faces electromagnetic horn based on SIW technologies, including SMA connectors, microstrip line, microstrip line transition structure, SIW electromagnetic horns and the radiant body being sequentially connected；The microstrip line, microstrip line transition structure are arranged on medium substrate upper surface, the SIW electromagnetic horns are made up of two row's metal throuth holes, the SMA connectors are arranged on one end of medium substrate as signal input part, and the radiant body is arranged on the other end of medium substrate；The rectangular metal paster that the radiant body is parallel to each other by four rows forms, and each two row of upper and lower surface of medium substrate, often arranges and is made up of multiple rectangular metal pasters, the distance between each rectangular metal paster is equal.The present invention is simple in construction, and section is low, is easy to integrate with planar circuit, and has wider bandwidth and higher gain.
Description
Technical field
The present invention relates to a kind of antenna, particularly a kind of H faces electromagnetic horn based on SIW technologies.
Background technology
With the development of modern communications technology and the appearance of novel millimeter wave wireless application technology, people are to millimeter wave device
The attention rate of part and system improves constantly, wherein the miniaturization to device and system is particularly paid close attention to.And antenna is radio reception
With the important component in emission system, the improvement of antenna performance and the reduction of size are particularly important.
Electromagnetic horn and microstrip antenna be radio reception and transmitting in the most frequently used two kinds of antennas.Electromagnetic horn is most
One of widely used microwave antenna, it the advantages of be have that simple in construction, feed is easy, frequency band is wider, power capacity is big and
The globality of high-gain, but electromagnetic horn size is larger, takes up space big, and traditional mode and plane with coaxial transition
Circuit connection can produce larger energy loss.Microstrip antenna size is small, cost is low, is adapted to integrate with planar circuit, but micro-
Band Antenna gain pattern is poor, and gain is small.
The content of the invention
It is an object of the invention to provide a kind of H faces electromagnetic horn based on SIW technologies.
To realize that the technical scheme of the object of the invention is：A kind of H faces electromagnetic horn based on SIW technologies, including connect successively
SMA connectors, microstrip line, microstrip line transition structure, SIW electromagnetic horns and the radiant body connect；The microstrip line, microstrip line transition
Structure setting is made up of in medium substrate upper surface, the SIW electromagnetic horns two row's metal throuth holes, the SMA connectors conduct
Signal input part is arranged on one end of medium substrate, and the radiant body is arranged on the other end of medium substrate；
The rectangular metal paster that the radiant body is parallel to each other by four rows forms, each two row of upper and lower surface of medium substrate,
Often arrange and be made up of multiple rectangular metal pasters, the distance between each rectangular metal paster is equal, and signal is from SIW electromagnetic horn spokes
It is shot out, first passes through two row's rectangular metal pasters radiation close to SIW electromagnetic horns, then through two row's rectangular metal paster spokes later
Penetrate.
Compared with prior art, remarkable advantage of the invention is：(1) high gain, radiation directivity is good, and S11 is with wide；
(2) it is simple in construction, easy to process, low manufacture cost；(3) section is low, and size is small, is easy to be connected with planar circuit；(4) back lobe spoke
Penetrate small, radiation efficiency height.
Brief description of the drawings
Fig. 1 is the outline structural diagram of the H faces electromagnetic horn based on SIW technologies of the present invention.
Fig. 2 (a) is the structural representation of the H faces electromagnetic horn metal throuth hole of the invention based on SIW technologies.
Fig. 2 (b) is the structure top view of the H faces electromagnetic horn metal throuth hole of the invention based on SIW technologies.
Fig. 3 (a) is the structural representation of radiant body in the H faces electromagnetic horn of the invention based on SIW technologies.
Fig. 3 (b) is the structure top view of radiant body in the H faces electromagnetic horn of the invention based on SIW technologies.
Fig. 4 is the S11 curve maps of the H faces electromagnetic horn input of the invention based on SIW technologies.
Fig. 5 is the antenna pattern in H face electromagnetic horn E face and H face of the present invention based on SIW technologies.
Embodiment
The present invention is described in further detail below in conjunction with the accompanying drawings.
With reference to Fig. 1, a kind of H faces electromagnetic horn based on SIW technologies of the invention, including the SMA connectors being sequentially connected
P1, microstrip line L1, microstrip line transition structure L2, SIW electromagnetic horn F1 and radiant body F2；The microstrip line L1, microstrip line transition
Structure L2 is arranged on medium substrate upper surface, and the SIW electromagnetic horns F1 is made up of two row's metal throuth holes, the SMA connectors
P1 is arranged on one end of medium substrate as signal input part, and the radiant body F2 is arranged on the other end of medium substrate；
With reference to Fig. 3 (a) and Fig. 3 (b), the rectangular metal paster that the radiant body F2 is parallel to each other by four rows forms, medium
Each two row of upper and lower surface of substrate, often arranges and is made up of multiple rectangular metal pasters, the distance between each rectangular metal paster phase
Deng, signal is radiate from SIW electromagnetic horns F1, first passes through two row's rectangular metal pasters radiation close to SIW electromagnetic horns F1,
Two row's rectangular metal pasters radiate after passing through again.Two row's rectangular metal pasters close to SIW electromagnetic horns F1 are respectively first row
Rectangular metal paster G1 and second row rectangular metal paster G2, rear two rows rectangular metal paster are respectively the 3rd row's rectangular metal patch
Piece G3 and the 4th row's rectangular metal paster G4.
Further, SMA connectors P1 includes outer conductor, inner wire and insulator, and insulator is arranged on outer conductor, interior led
Between body, outer conductor is connected with medium substrate bottom-side metal earth plate, and inner wire is connected by probe with micro-strip linear contact lay.
Further, the SMA connectors P1 working frequencies are DC-27GHz, and voltage is stayed in the range of 18GHz-27GHz
Bob：1.15:1.
Further, the outer conductor of the SMA connectors P1 is brass gilding, and inner wire is bronze gilding,
Insulator is PTFE material.
Further, the width of the microstrip line L1 is more than or equal to the diameter of SMA connector P1 inner wires, and inner wire is close to
On microstrip line L1, with microstrip line L1 center lines on the same line, signal transmits micro-strip to inner wire axis from SMA connectors P1
Line L1, the TEM moulds that are defined are changed by TEM moulds.
Further, the characteristic impedance of the SMA connectors P1 and microstrip line L1 resistance are 50 ohm.
Further, the microstrip transition structure L2 is the microstrip line that one section of width gradually broadens, trapezoidal shape, width
Smaller one end connects microstrip line L1, the larger one end connection SIW electromagnetic horns F1 of width, and larger one end width is less than SIW antennas F1
The distance between two row's metal throuth holes.
Further, first is included with reference to Fig. 2 (a) and Fig. 2 (b), two row's metal throuth holes of the SIW electromagnetic horns F1
Point and Part II, Part I be two row's parallel metal through holes, i.e. T1 and T2 in Fig. 2 (b), be equivalent to rectangular metal waveguide,
It is connected with microstrip transition structure L2；Part II is trapezoidal metal throuth hole, is made up of the metal throuth hole of two rows at an angle, i.e.,
T3 and T4, is equivalent to bell mouth diameter in Fig. 2 (b)；Center line of the SIW electromagnetic horns F1 two row's metal throuth holes on microstrip line L1
Symmetrically, signal is transferred to SIW electromagnetic horn F1 from microstrip line L1, and TE10 moulds are converted to by quasi- TEM moulds.
The invention will be further described with specific embodiment below in conjunction with the accompanying drawings.
Embodiment
It is 4.39mm, width 1.38mm that the present embodiment, which takes microstrip line L1 length,；Transition section length is 2.01mm, broadside
Width is 3mm；Metal throuth hole radius is that the distance between 0.5mm, the row's parallel metal through hole of left end two is 3.7mm, is often arranged parallel
Metal throuth hole includes 3 metal throuth holes, and often row includes 8 metal throuth holes in the trapezoidal metal throuth hole of right-hand member, adjacent metal through hole it
Between distance be 1.35mm；The row's rectangular metal pasters of radiant body F2 tetra- are parallel to each other, often arrange 11 rectangular metal pasters, each two
The distance between rectangular metal paster is 0.85mm, and the length of rectangular metal paster is 1.39mm, width 0.71mm.
Result shown in Fig. 4, Fig. 5 is obtained by emulation, from fig. 4, it can be seen that the centre frequency of the antenna is
24.1GHz, -10dB are with a width of 1.9GHz；From fig. 5, it can be seen that the maximum gain of the antenna reaches 6dB, ratio reaches before and after gain
To 15.4dB.The antenna not only has very high gain, good front and rear ratio, also has wider bandwidth.
Claims (8)
1. a kind of H faces electromagnetic horn based on SIW technologies, it is characterised in that including the SMA connectors (P1), micro- being sequentially connected
Band line (L1), microstrip line transition structure (L2), SIW electromagnetic horns (F1) and radiant body (F2)；The microstrip line (L1), microstrip line
Transition structure (L2) is arranged on medium substrate upper surface, and the SIW electromagnetic horns (F1) are made up of two row's metal throuth holes, described
SMA connectors (P1) are arranged on one end of medium substrate as signal input part, and the radiant body (F2) is arranged on medium substrate
The other end；
The rectangular metal paster that the radiant body (F2) is parallel to each other by four rows forms, each two row of upper and lower surface of medium substrate,
Often arrange and be made up of multiple rectangular metal pasters, the distance between each rectangular metal paster is equal, and signal is from SIW electromagnetic horns
(F1) it radiate, the two row's rectangular metal pasters (G1, G2) first passed through close to SIW electromagnetic horns (F1) radiate, then after passing through
Two row's rectangular metal pasters (G3, G4) radiate.
2. the H faces electromagnetic horn according to claim 1 based on SIW technologies, it is characterised in that SMA connectors (P1) wrap
Outer conductor, inner wire and insulator are included, insulator is arranged between outer conductor and inner wire, outer conductor and medium substrate bottom surface gold
Category earth plate is connected, and inner wire contacts connection by probe with microstrip line (L1).
3. the H faces electromagnetic horn according to claim 2 based on SIW technologies, it is characterised in that the SMA connectors
(P1) working frequency is DC-27GHz.
4. the H faces electromagnetic horn based on SIW technologies according to Claims 2 or 3, it is characterised in that the SMA connectors
(P1) outer conductor is brass gilding, and inner wire is bronze gilding, and insulator is PTFE material.
5. the H faces electromagnetic horn according to claim 2 based on SIW technologies, it is characterised in that the microstrip line (L1)
Width is more than or equal to the diameter of SMA connectors (P1) inner wire, and inner wire axis is with microstrip line (L1) center line in same straight line
On, signal changes the TEM moulds that are defined from SMA connectors (P1) transmission microstrip line (L1) by TEM moulds.
6. the H faces electromagnetic horn according to claim 5 based on SIW technologies, it is characterised in that the SMA connectors
(P1) characteristic impedance and the resistance of microstrip line (L1) is 50 ohm.
7. the H faces electromagnetic horn according to claim 1 based on SIW technologies, it is characterised in that the microstrip transition structure
(L2) microstrip line gradually to be broadened for one section of width, trapezoidal shape, the smaller one end connection microstrip line (L1) of width, width is larger
One end connection SIW electromagnetic horns (F1), larger one end width are less than the distance between two row's metal throuth holes of SIW antennas (F1).
8. the H faces electromagnetic horn according to claim 1 based on SIW technologies, it is characterised in that the SIW electromagnetic horns
(F1) two row's metal throuth holes include Part I and Part II, and Part I is two row's parallel metal through holes, is equivalent to square
Shape metal waveguide, it is connected with microstrip transition structure (L2)；Part II is trapezoidal metal throuth hole, by the gold of two rows at an angle
Belong to through hole composition, be equivalent to bell mouth diameter；Center line of the two row's metal throuth holes of SIW electromagnetic horns (F1) on microstrip line (L1)
Symmetrically, signal is transferred to SIW electromagnetic horns (F1) from microstrip line (L1), and TE10 moulds are converted to by quasi- TEM moulds.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610716994.6A CN107785666A (en) | 2016-08-24 | 2016-08-24 | H faces electromagnetic horn based on SIW technologies |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610716994.6A CN107785666A (en) | 2016-08-24 | 2016-08-24 | H faces electromagnetic horn based on SIW technologies |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107785666A true CN107785666A (en) | 2018-03-09 |
Family
ID=61388588
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610716994.6A Pending CN107785666A (en) | 2016-08-24 | 2016-08-24 | H faces electromagnetic horn based on SIW technologies |
Country Status (1)
| Country | Link |
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| CN (1) | CN107785666A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109546348A (en) * | 2018-11-26 | 2019-03-29 | 贵州大学 | A kind of novel miniaturization broadband SW-SIW electromagnetic horn and its design method |
| CN111180877A (en) * | 2019-12-30 | 2020-05-19 | 深圳大学 | Substrate integrated waveguide horn antenna and control method thereof |
| CN111585029A (en) * | 2020-05-07 | 2020-08-25 | 华南理工大学 | Novel millimeter wave low-profile high-gain differential horn antenna |
| CN112952357A (en) * | 2021-01-22 | 2021-06-11 | 西安交通大学 | Plane combined pulse radiation antenna |
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|---|---|---|---|---|
| CN101026263A (en) * | 2006-02-22 | 2007-08-29 | 南京理工大学 | Substrate integrated waveguide small-sized prism type horn antenna |
| EP2797163A1 (en) * | 2013-04-26 | 2014-10-29 | BlackBerry Limited | Substrate integrated waveguide horn antenna |
| US20140320364A1 (en) * | 2013-04-26 | 2014-10-30 | Research In Motion Limited | Substrate integrated waveguide horn antenna |
| CN104393388A (en) * | 2014-12-09 | 2015-03-04 | 电子科技大学 | Terahertz substrate integrated waveguide multi-channel power divider |
-
2016
- 2016-08-24 CN CN201610716994.6A patent/CN107785666A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101026263A (en) * | 2006-02-22 | 2007-08-29 | 南京理工大学 | Substrate integrated waveguide small-sized prism type horn antenna |
| EP2797163A1 (en) * | 2013-04-26 | 2014-10-29 | BlackBerry Limited | Substrate integrated waveguide horn antenna |
| US20140320364A1 (en) * | 2013-04-26 | 2014-10-30 | Research In Motion Limited | Substrate integrated waveguide horn antenna |
| CN104393388A (en) * | 2014-12-09 | 2015-03-04 | 电子科技大学 | Terahertz substrate integrated waveguide multi-channel power divider |
Non-Patent Citations (2)
| Title |
|---|
| M. ESQUIUS-MOROTE: "A New Type of Printed Ku-Band SIW Horn Antenna with Enhanced Performances", 《PROCEEDINGS OF ISAP2012》 * |
| YICHEN TANG: "A novel high gain K-band H-plane SIW horn antenna using dielectric loading", 《PROCEEDING OF ASIA-PACIFIC MICROWAVE CONFERENCE》 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109546348A (en) * | 2018-11-26 | 2019-03-29 | 贵州大学 | A kind of novel miniaturization broadband SW-SIW electromagnetic horn and its design method |
| CN109546348B (en) * | 2018-11-26 | 2020-08-25 | 贵州大学 | Novel miniaturized broadband SW-SIW horn antenna and design method thereof |
| CN111180877A (en) * | 2019-12-30 | 2020-05-19 | 深圳大学 | Substrate integrated waveguide horn antenna and control method thereof |
| CN111585029A (en) * | 2020-05-07 | 2020-08-25 | 华南理工大学 | Novel millimeter wave low-profile high-gain differential horn antenna |
| CN112952357A (en) * | 2021-01-22 | 2021-06-11 | 西安交通大学 | Plane combined pulse radiation antenna |
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Application publication date: 20180309 |