CN107785666A - H faces electromagnetic horn based on SIW technologies - Google Patents

Abstract

The invention discloses an H-plane horn antenna based on SIW technology, comprising sequentially connected SMA connectors, microstrip lines, microstrip line transition structures, SIW horn antennas and radiators; the microstrip line, microstrip line transition The structure is arranged on the upper surface of the dielectric substrate, the SIW horn antenna is composed of two rows of metal through holes, the SMA connector is arranged at one end of the dielectric substrate as a signal input end, and the radiator is arranged at the other end of the dielectric substrate; The radiator is composed of four rows of rectangular metal patches parallel to each other. There are two rows on the upper and lower surfaces of the dielectric substrate. Each row is composed of multiple rectangular metal patches, and the distance between each rectangular metal patch is equal. The invention has the advantages of simple structure, low profile, easy integration with planar circuits, wide bandwidth and high gain.

Description

H-plane horn antenna based on SIW technology

technical field

The invention relates to an antenna, in particular to an H-plane horn antenna based on SIW technology.

Background technique

With the development of modern communication technology and the advent of new millimeter-wave wireless application technologies, people pay more and more attention to millimeter-wave devices and systems, especially the miniaturization of devices and systems. The antenna is an important part of the radio receiving and transmitting system, and the improvement of the performance and the reduction of the size of the antenna are particularly important.

Horn antennas and microstrip antennas are the two most commonly used antennas for radio reception and transmission. The horn antenna is one of the most widely used microwave antennas. It has the advantages of simple structure, convenient feeding, wide frequency band, large power capacity and high gain integrity, but the horn antenna is large in size, takes up a lot of space, and The traditional way of coaxial transition to connect with the planar circuit will produce a large energy loss. The microstrip antenna is small in size and low in cost, and is suitable for integration with planar circuits, but the radiation directionality of the microstrip antenna is poor and the gain is small.

Contents of the invention

The purpose of the present invention is to provide an H-plane horn antenna based on SIW technology.

The technical scheme for realizing the object of the present invention is: a kind of H surface horn antenna based on SIW technology, comprising the SMA connector, microstrip line, microstrip line transition structure, SIW horn antenna and radiator connected successively; Line and microstrip line transition structures are set on the upper surface of the dielectric substrate, the SIW horn antenna is composed of two rows of metal through holes, the SMA connector is set at one end of the medium substrate as a signal input end, and the radiator is set on the medium the other end of the substrate;

The radiator is composed of four rows of rectangular metal patches parallel to each other. There are two rows on the upper and lower surfaces of the dielectric substrate. Each row is composed of multiple rectangular metal patches. The distance between each rectangular metal patch is equal, and the signal from The SIW horn antenna radiates out, first radiating through two rows of rectangular metal patches close to the SIW horn antenna, and then radiating through the last two rows of rectangular metal patches.

Compared with the prior art, the significant advantages of the present invention are: (1) high gain, good radiation directivity, and wide S11 bandwidth; (2) simple structure, easy processing, and low manufacturing cost; (3) low profile and small size , easy to connect with the planar circuit; (4) the back lobe radiation is small and the radiation efficiency is high.

Description of drawings

FIG. 1 is a schematic diagram of the outline structure of the H-plane horn antenna based on the SIW technology of the present invention.

Fig. 2(a) is a schematic structural diagram of the metal through hole of the H-plane horn antenna based on the SIW technology of the present invention.

Fig. 2(b) is a top view of the structure of the metal through-hole of the H-plane horn antenna based on the SIW technology of the present invention.

Fig. 3(a) is a schematic structural diagram of the radiator in the H-plane horn antenna based on the SIW technology of the present invention.

Fig. 3(b) is a top view of the structure of the radiator in the H-plane horn antenna based on the SIW technology of the present invention.

FIG. 4 is a graph of S11 at the input end of the H-plane horn antenna based on the SIW technology of the present invention.

Fig. 5 is the radiation pattern of the E-plane and H-plane of the H-plane horn antenna based on the SIW technology of the present invention.

Detailed ways

The present invention will be described in further detail below in conjunction with the accompanying drawings.

In conjunction with Fig. 1, a kind of H surface horn antenna based on SIW technology of the present invention includes SMA connector P1, microstrip line L1, microstrip line transition structure L2, SIW horn antenna F1 and radiator F2 connected in sequence; The microstrip line L1 and the microstrip line transition structure L2 are arranged on the upper surface of the dielectric substrate, the SIW horn antenna F1 is composed of two rows of metal through holes, and the SMA connector P1 is arranged at one end of the dielectric substrate as a signal input end. The radiator F2 is arranged at the other end of the dielectric substrate;

3(a) and 3(b), the radiator F2 is composed of four rows of rectangular metal patches parallel to each other. There are two rows on the upper and lower surfaces of the dielectric substrate, and each row is composed of multiple rectangular metal patches. The distance between each rectangular metal patch is equal, the signal is radiated from the SIW horn antenna F1, first radiated by two rows of rectangular metal patches close to the SIW horn antenna F1, and then radiated by the last two rows of rectangular metal patches. The two rows of rectangular metal patches near the SIW horn antenna F1 are the first row of rectangular metal patches G1 and the second row of rectangular metal patches G2, and the last two rows of rectangular metal patches are the third row of rectangular metal patches G3 and The fourth row of rectangular metal patches G4.

Further, the SMA connector P1 includes an outer conductor, an inner conductor and an insulator, the insulator is arranged between the outer conductor and the inner conductor, the outer conductor is connected to the metal ground plate on the bottom surface of the dielectric substrate, and the inner conductor is connected to the microstrip line through a probe.

Further, the working frequency of the SMA connector P1 is DC-27GHz, and the VSWR in the range of 18GHz-27GHz: 1.15:1.

Further, the outer conductor of the SMA connector P1 is brass gold-plated material, the inner conductor is bronze gold-plated material, and the insulator is PTFE material.

Further, the width of the microstrip line L1 is greater than or equal to the diameter of the inner conductor of the SMA connector P1, the inner conductor is closely attached to the microstrip line L1, the axis of the inner conductor is on the same line as the center line of the microstrip line L1, and the signal from SMA connector P1 transmits microstrip line L1, which is converted from TEM mode to quasi-TEM mode.

Further, the characteristic impedance of the SMA connector P1 and the resistance of the microstrip line L1 are both 50 ohms.

Further, the microstrip transition structure L2 is a section of microstrip line whose width gradually becomes wider, in a trapezoidal shape, one end with a smaller width is connected to the microstrip line L1, the end with a larger width is connected to the SIW horn antenna F1, and the width at the larger end is less than Distance between two rows of metal vias for SIW antenna F1.

Further, in conjunction with FIG. 2(a) and FIG. 2(b), the two rows of metal through holes of the SIW horn antenna F1 include a first part and a second part, and the first part is two rows of parallel metal through holes, that is, FIG. 2( T1 and T2 in b) are equivalent to rectangular metal waveguides, which are connected to the microstrip transition structure L2; the second part is a trapezoidal metal via, which is composed of two rows of metal vias at a certain angle, that is, in Figure 2(b) T3 and T4 are equivalent to the horn caliber; the two rows of metal through holes of the SIW horn antenna F1 are symmetrical about the center line of the microstrip line L1, and the signal is transmitted from the microstrip line L1 to the SIW horn antenna F1, and converted from quasi-TEM mode to TE10 mold.

The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.

Example

In this embodiment, the length of the microstrip line L1 is 4.39mm, and the width is 1.38mm; the length of the transition section is 2.01mm, and the width of the wide side is 3mm; The distance is 3.7mm, each row of parallel metal vias includes 3 metal vias, each row of trapezoidal metal vias on the right end includes 8 metal vias, and the distance between adjacent metal vias is 1.35mm; Radiator F2 4 The rows of rectangular metal patches are parallel to each other, each row has 11 rectangular metal patches, the distance between every two rectangular metal patches is 0.85mm, the length of the rectangular metal patches is 1.39mm, and the width is 0.71mm.

The results shown in Figure 4 and Figure 5 are obtained through simulation. It can be seen from Figure 4 that the center frequency of the antenna is 24.1GHz, and the -10dB bandwidth is 1.9GHz; it can be seen from Figure 5 that the maximum gain of the antenna reaches 6dB , The front-to-back gain ratio reaches 15.4dB. The antenna not only has high gain, good front-to-back ratio, but also has wide bandwidth.

Claims (8)

1. a kind of H faces electromagnetic horn based on SIW technologies, it is characterised in that including the SMA connectors (P1), micro- being sequentially connected Band line (L1), microstrip line transition structure (L2), SIW electromagnetic horns (F1) and radiant body (F2)；The microstrip line (L1), microstrip line Transition structure (L2) is arranged on medium substrate upper surface, and the SIW electromagnetic horns (F1) are made up of two row's metal throuth holes, described SMA connectors (P1) are arranged on one end of medium substrate as signal input part, and the radiant body (F2) is arranged on medium substrate The other end；

The rectangular metal paster that the radiant body (F2) is parallel to each other by four rows forms, each two row of upper and lower surface of medium substrate, Often arrange and be made up of multiple rectangular metal pasters, the distance between each rectangular metal paster is equal, and signal is from SIW electromagnetic horns (F1) it radiate, the two row's rectangular metal pasters (G1, G2) first passed through close to SIW electromagnetic horns (F1) radiate, then after passing through Two row's rectangular metal pasters (G3, G4) radiate.

2. the H faces electromagnetic horn according to claim 1 based on SIW technologies, it is characterised in that SMA connectors (P1) wrap Outer conductor, inner wire and insulator are included, insulator is arranged between outer conductor and inner wire, outer conductor and medium substrate bottom surface gold Category earth plate is connected, and inner wire contacts connection by probe with microstrip line (L1).

3. the H faces electromagnetic horn according to claim 2 based on SIW technologies, it is characterised in that the SMA connectors (P1) working frequency is DC-27GHz.

4. the H faces electromagnetic horn based on SIW technologies according to Claims 2 or 3, it is characterised in that the SMA connectors (P1) outer conductor is brass gilding, and inner wire is bronze gilding, and insulator is PTFE material.

5. the H faces electromagnetic horn according to claim 2 based on SIW technologies, it is characterised in that the microstrip line (L1) Width is more than or equal to the diameter of SMA connectors (P1) inner wire, and inner wire axis is with microstrip line (L1) center line in same straight line On, signal changes the TEM moulds that are defined from SMA connectors (P1) transmission microstrip line (L1) by TEM moulds.

6. the H faces electromagnetic horn according to claim 5 based on SIW technologies, it is characterised in that the SMA connectors (P1) characteristic impedance and the resistance of microstrip line (L1) is 50 ohm.

7. the H faces electromagnetic horn according to claim 1 based on SIW technologies, it is characterised in that the microstrip transition structure (L2) microstrip line gradually to be broadened for one section of width, trapezoidal shape, the smaller one end connection microstrip line (L1) of width, width is larger One end connection SIW electromagnetic horns (F1), larger one end width are less than the distance between two row's metal throuth holes of SIW antennas (F1).

8. the H faces electromagnetic horn according to claim 1 based on SIW technologies, it is characterised in that the SIW electromagnetic horns (F1) two row's metal throuth holes include Part I and Part II, and Part I is two row's parallel metal through holes, is equivalent to square Shape metal waveguide, it is connected with microstrip transition structure (L2)；Part II is trapezoidal metal throuth hole, by the gold of two rows at an angle Belong to through hole composition, be equivalent to bell mouth diameter；Center line of the two row's metal throuth holes of SIW electromagnetic horns (F1) on microstrip line (L1) Symmetrically, signal is transferred to SIW electromagnetic horns (F1) from microstrip line (L1), and TE10 moulds are converted to by quasi- TEM moulds.