CN107785489B - Organic electroluminescence device - Google Patents
Organic electroluminescence device Download PDFInfo
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- CN107785489B CN107785489B CN201610737394.8A CN201610737394A CN107785489B CN 107785489 B CN107785489 B CN 107785489B CN 201610737394 A CN201610737394 A CN 201610737394A CN 107785489 B CN107785489 B CN 107785489B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
- H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
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Abstract
The invention discloses a kind of organic electroluminescence devices, including anode, hole transmission layer, luminescent layer, electron transfer layer and cathode；Anode is oppositely arranged with cathode；Hole transmission layer is formed between anode and luminescent layer；Luminescent layer is formed between hole transmission layer and electron transfer layer；Electron transfer layer is formed between luminescent layer and cathode；Luminescent layer includes red light luminescent layer, green light emitting layer and blue light-emitting；Red light luminescent layer and green light emitting layer are disposed adjacent, and are both formed on blue light-emitting；And blue light-emitting is blue light quantum point layer.It uses blue light quantum point layer as blue light-emitting, solves the problems, such as to will lead to the reduction of blue light efficiency when traditional organic electroluminescence device directly reduces the thickness of blue light-emitting.
Description
Technical field
The present invention relates to display device technical fields, more particularly to a kind of organic electroluminescence device.
Background technique
Currently, small-medium size AMOLED (Active-matrix organic light emitting diode, it is active
Matrix/organic light emitting diode (AMOLED) or active-matrix organic light emitting diode) display generally use FMM (Fine Metal Mask,
Metal light cover) vapor deposition mode produce.
It is usually to share indigo plant by the structure setting of display device when preparing display using the vapor deposition mode generation of FMM
Photosphere structure (that is, the upper surface of red, the green sub-pixel in display device increases blue light-emitting) Lai Shixian is in preparation process
One of Mask of middle saving, to improve the yield and resolution ratio of device.And it is driven since the introducing of blu-ray layer will cause red, green phosphorescent layer
The raising of dynamic voltage, usual voltage is increased in 1V or more, so as to cause the raising of device overall power.Therefore, in order to avoid device
The raising of overall power generallys use the thickness for directly reducing blue light-emitting, to realize the reduction of red green light driving voltage.
But when reduction of the thickness by directly reducing blue light-emitting to realize red-green glow driving voltage, often make blue light
Efficiency reduces, to be unfavorable for the display performance of device.
Summary of the invention
Based on this, it is necessary to for traditional organic electroluminescence device by directly reduce the thickness of blue light-emitting come
It will lead to the reduction of blue light efficiency when realizing the reduction of red-green glow driving voltage, to mention the problem of influencing the display performance of device
For a kind of organic electroluminescence device.
To realize the present invention purpose provide a kind of organic electroluminescence device, including anode, hole transmission layer, shine
Layer, electron transfer layer and cathode；
The anode is oppositely arranged with the cathode；
The hole transmission layer is formed between the anode and the luminescent layer；
The luminescent layer is formed between the hole transmission layer and the electron transfer layer；
The electron transfer layer is formed between the luminescent layer and the cathode；
The luminescent layer includes red light luminescent layer, green light emitting layer and blue light-emitting；
The red light luminescent layer and the green light emitting layer are disposed adjacent, and are both formed on the blue light-emitting；And
The blue light-emitting is blue light quantum point layer.
The material of main part of the red light luminescent layer and the green light emitting layer prolongs in one of the embodiments, for thermal activation
Slow fluorescent material.
The structure of the blue light quantum point layer is single layer structure in one of the embodiments,.
The quantum point grain diameter of the blue light quantum point layer is 2nm-10nm in one of the embodiments,.
In one of the embodiments, the blue light-emitting with a thickness of 2nm-10nm.
In one of the embodiments, the blue light-emitting with a thickness of 2nm-3nm.
In one of the embodiments, the material of the blue light quantum point layer be CdSe, CdS, CdTe, ZnO, ZnS,
Any one of ZnSe, PbSe, PbS, PbTe and InP or combination.
In one of the embodiments, the material of the blue light quantum point layer be any one of CdSe, ZnSe and CdS or
Combination.
The triplet state with singlet energy level difference of the thermal activation delayed fluorescence material are less than in one of the embodiments,
0.15eV。
In one of the embodiments, the triplet state Yu singlet energy level difference of the thermal activation delayed fluorescence material be less than or
Equal to 0.10eV.
Above-mentioned organic electroluminescence device is disposed adjacent with green light emitting layer by setting red light luminescent layer and is formed in indigo plant
On light luminescent layer, sharing for blue light-emitting is realized, while also being sent out on this basis using blue light quantum point material as blue light
The luminescent material of photosphere, that is, using blue light quantum point layer as blue light-emitting, so that the high carrier using blue light quantum point moves
Shifting rate and thinner thickness, to realize the reduction of red-green glow driving voltage.At the same time it can also the blue spectrum that narrows, blue light is improved
Efficiency.It is while being effectively reduced red-green glow driving voltage as a result, it is ensured that blue light efficiency finally efficiently solves biography
When the organic electroluminescence device of system is by directly reducing reduction of the thickness of blue light-emitting to realize red-green glow driving voltage
It will lead to the reduction of blue light efficiency, thus the problem of influencing the display performance of device.
Detailed description of the invention
Fig. 1 is the vertical section structure schematic diagram of a specific embodiment of organic electroluminescence device of the invention；
Fig. 2 is the vertical section structure schematic diagram of the another specific embodiment of organic electroluminescence device of the invention.
Specific embodiment
To keep technical solution of the present invention clearer, the present invention is made below in conjunction with drawings and the specific embodiments further detailed
It describes in detail bright.
First, it should be noted that the thickness and size of each film layer shown in the drawings provided by the invention is only
The position for characterizing the film layer, is not used to limit the thickness size relation of each film layer.
A specific embodiment referring to Fig. 1, as organic electroluminescence device 100 of the invention comprising anode 120,
Hole transmission layer 130, luminescent layer 140, electron transfer layer 150 and cathode 160.Wherein, anode 120 is oppositely arranged with cathode 160.
Also, hole transmission layer 130, luminescent layer 140 and electron transfer layer 150 are respectively positioned between anode 120 and cathode 160.It is specific:
Hole transmission layer 130 is formed between anode 120 and luminescent layer 140.Luminescent layer 140 is formed in hole transmission layer 130 and electronics
Between transport layer 150.Electron transfer layer 150 is formed between luminescent layer 140 and cathode 160.Wherein, luminescent layer 140 includes red
Light luminescent layer 141, green light emitting layer 142 and blue light-emitting 143.Red light luminescent layer 141 and green light emitting layer 142 is adjacent sets
It sets, and is both formed on blue light-emitting 143.Also, in organic electroluminescence device 100 of the invention, blue light-emitting
143 be blue light quantum point layer.
It is by organic electroluminescence device 100, using blue light quantum point layer as blue light-emitting 143 (that is, adopting
The blue phosphor layer in traditional shared blu-ray layer is replaced with blue light quantum point), and thermal activation delayed fluorescence material is used simultaneously
As the material of main part of red light luminescent layer 141 and green light emitting layer 142, the high carrier migration using blue light quantum point is realized
Rate and thinner thickness reduce influence of the blue light shared layer to red and green luminous 140 driving voltage of layer, thus realize reduce it is red
The purpose of green light driving voltage.Also, the luminescent material using blue light quantum point material as blue light-emitting 143, can be narrow
Change blue spectrum, to effectively improve blue light efficiency.
Likewise it is preferred that, in order to guarantee the purity of red-green glow color, in use blue light quantum point material as blue light emitting
On the basis of the luminescent material of layer 143, also while using thermal activation delayed fluorescence material as red light luminescent layer 141 and green light
The material of main part of luminescent layer 142, to reduce by three in phosphorescence luminescent layer 140 (that is, red light luminescent layer 141 and green light emitting layer 142)
Line state exciton concentration, to avoid the exciton diffusion in red light luminescent layer 141 and green light emitting layer 142 to blue light quantum point layer (that is,
Blue light-emitting 143) in.
Its luminescent material by using blue light quantum point material as blue light-emitting 143 as a result, while also using heat
Material of main part of the delayed fluorescence material as red light luminescent layer 141 and green light emitting layer 142 is activated, feux rouges and green is being effectively ensured
While the photochromic purity of light, both reduced the driving voltage of feux rouges and green light, it is ensured that blue light efficiency, so that organic electroluminescence
Luminescent device 100 can be with good performance.
It should be noted that the structure of organic electroluminescence device 100 of the invention may be either top light emitting-type OLED, it can also
For bottom light emitting-type OLED.
Referring to Fig. 1, for the structure of the organic electroluminescence device 100 of top light emitting-type.Wherein, direction shown in arrow is red
The exit direction of light, green light and blue light.Specific: the organic electroluminescence device 100 for pushing up light emitting-type includes anode 120, hole
Transport layer 130, luminescent layer 140, electron transfer layer 150 and cathode 160.Wherein, it will be appreciated by persons skilled in the art that it is positive
Pole 120 is formed directly on substrate 110, and the substrate 110 (such as: ITO) of conductive energy can also be used directly as anode
120.Meanwhile it may also be formed with hole injection layer 170 between anode 120 and hole transmission layer 130.That is, directly in anode 120
Upper formation hole injection layer 170, then directly forms hole transmission layer 130 on hole injection layer 170 again.Luminescent layer 140 is then
Specifically include red light luminescent layer 141, green light emitting layer 142 and blue light-emitting 143.
Wherein, blue light-emitting 143 is formed directly on hole transmission layer 130, and due to the hair of blue light-emitting 143
Luminescent material is blue light quantum point material, therefore in organic electroluminescence device 100 of the invention, blue light-emitting 143 it is micro-
Seeing structure is to be laid in structure on hole transmission layer 130 after multiple blue light quantum point close-packed arrays.Meanwhile it needing to illustrate herein
, blue light quantum point layer may be either single layer structure, can also be multilayered structure.Wherein, preferably single layer structure.That is, blue light is sent out
The structure of photosphere 143 is the structure of single-layer blue light quantum point layer.Meanwhile in blue light-emitting 143, the amount of blue light quantum point layer
The value range of son point partial size are as follows: 2nm-10nm.As a result, when blue light-emitting 143 is single-layer blue light quantum point layer, blue light hair
The Thickness range of photosphere 143 are as follows: 2nm-10nm.Preferably, blue light-emitting 143 with a thickness of 2nm-3nm.At this point, blue
The quantum point grain diameter of light quanta point layer is 2nm-3nm.Meanwhile the material of blue light quantum point layer can for CdSe, CdS, CdTe, ZnO,
Any one of ZnS, ZnSe, PbSe, PbS, PbTe and InP.Preferably, the material of blue light quantum point layer be CdSe, ZnSe and
Any one of CdS.In addition, it should also be noted that, the formation of blue light-emitting 143 can directly adopt coating processes.
After directly forming blue light-emitting 143 on hole transmission layer 130 using blue light quantum point material, red light-emitting
Layer 141 and green light emitting layer 142 are then formed directly on blue light-emitting 143, to realize being total to for blue light-emitting 143
With.Wherein, red light luminescent layer 141 is disposed adjacent with green light emitting layer 142.Meanwhile red light luminescent layer 141 and green light emitting layer
142 main structure is thermal activation delayed fluorescence material.Also, the triplet state and singlet energy level of thermal activation delayed fluorescence material
Difference is less than 0.15eV, preferably less than or equal to 0.10eV.Herein, it should be noted that thermal activation delayed fluorescence material refers to
It is the material there are charge transfer transition.Donor groups unit and acceptor groups list are existed simultaneously in thermal activation delayed fluorescence material
Member.Wherein, donor groups unit is the group that a donor groups or more than two donor groups connect and compose.Acceptor groups
Unit mutually should be the group that an acceptor groups or more than two acceptor groups connect and compose.One or more donor groups lists
It is first to be directly connected to form thermal activation delayed fluorescence material with one or more acceptor groups units；Alternatively, one or more donors
Group unit and one or more acceptor groups units connect to form thermal activation delayed fluorescence material respectively with linking group.It can be with
The evaporation process system of metal light cover processing procedure can be directly used in understanding, red light luminescent layer 141 and green light emitting layer 142
It is standby.
After forming red light luminescent layer 141 and green light emitting layer 142 on blue light-emitting 143, it can be sent out in feux rouges
On photosphere 141, green light emitting layer 142 and the blue light-emitting 143 that is not covered by red light luminescent layer 141 and green light emitting layer 142
Form electron transfer layer 150.And then cathode 160 is directly formed on electron transfer layer 150 again.Herein, it should be noted that this
Field technical staff, which is appreciated that may also include in organic electroluminescence device, electron injecting layer 180.Wherein, electronics is infused
Enter layer 180 to be formed between electron transfer layer 150 and cathode 160.That is, being initially formed electron injecting layer on electron transfer layer 150
180, and then cathode 160 is formed on electron injecting layer 180 again, to ultimately form the organic electroluminescence of top light emitting-type of the invention
Luminescent device 100.
Wherein, it should be noted that in the organic electroluminescence device 100 of top light emitting-type shown in FIG. 1, each film layer is equal
The evaporation process of metal light cover processing procedure can be used to prepare.Other coating process can also be used, such as: magnetron sputtering deposits work
Skill, coating processes etc. are realized.That is, this can be used in each film layer in organic electroluminescence device 100 of the invention
Any film-forming process well known to field is realized, evaporation process is not only limited in.
In addition, referring to fig. 2, as the another specific embodiment of organic electroluminescence device 100 of the invention, can also be
The organic electroluminescence device 100 of bottom light emitting-type.That is, it can also be inverted structure.Wherein, direction shown in arrow is feux rouges, green
The exit direction of light and blue light.
Specifically, when organic electroluminescence device 100 of the invention is bottom light emitting-type device, the then direct shape of cathode 160
At on substrate 110.Meanwhile in organic electroluminescence device 100 of the invention, there is electron injecting layer since it may also include
180, therefore, is formed after cathode 160 on substrate 110, electron injecting layer 180 can be formed directly on cathode 160.Into
And electron transfer layer 150 is formed directly on electron injecting layer 180.Wherein, the material of main part of electron transfer layer 150 is preferably
ZnO (zinc oxide).Blue light-emitting 143 is then formed directly on electron transfer layer 150.Meanwhile blue light-emitting 143 is microcosmic
Structure, quantum grain particle size, the film thickness of the blue light-emitting 143 top emission type organic electro luminescent device in front
Detailed description is had been carried out in 100, details are not described herein again.
Red light luminescent layer 141 and green light emitting layer 142 are equally disposed adjacent and are formed directly into blue light-emitting 143
On.Also, the features such as the material of main part of the red light luminescent layer 141 and green light emitting layer 142 also top light emitting-type in front
It is elaborated in organic electroluminescence device 100, is also no longer repeated herein.
Hole transmission layer 130 is then formed directly into red light luminescent layer 141, green light emitting layer 142 and not by red light luminescent layer
141 and green light emitting layer 142 cover blue light-emitting 143 on.Herein, it should be noted that in bottom light emitting-type of the invention
It is same between anode 120 and hole transmission layer 130 in one specific embodiment of the organic electroluminescence device 100 of structure
It may also be formed with hole injection layer 170.That is, after directly forming hole injection layer 170 on hole transmission layer 130, then in hole
Anode 120 is directly formed on implanted layer 170.To ultimately form the organic electroluminescence device 100 of bottom light emitting-type.
Equally, in the organic electroluminescence device 100 of bottom light emitting-type, the preparation process of each film layer can both be all made of gold
The evaporation process preparation for belonging to optical cover process can also adopt other film-forming process preparations known in the field.It needs to illustrate
It is that in the organic electroluminescence device 100 of bottom light emitting-type, the preparation process of electron transfer layer 150 and blue light-emitting 143 is excellent
It is selected as coating processes.
Wherein, tradition is replaced by using blue light quantum point layer in order to illustrate organic electroluminescence device 100 of the invention
Blue phosphor layer can be effectively reduced red-green glow driving voltage as the blue light shared layer in device, while can also ensure that indigo plant
Light efficiency, below to carry out corresponding performance test to two different organic electroluminescence devices 100.
Referring to table 2, the organic electroluminescence device 100 that number is A is use blue light quantum point layer of the invention as blue
The organic electroluminescence device 100 of light luminescent layer 143, structure are top light emitting-type.Wherein, in this embodiment, each film
Material used by layer and the thickness of each film layer are respectively as follows: ITO/Ag/ITO/HAT-CN/NPB/TCTA/ CBP:5%Ir (piq)3 /B-QD/BCP/
Alq3 /Mg:Ag/Ag Wherein, blue light quantum point layer uses CdSe quantum dot.Also, it is each
The structural formula of film layer organic material can be respectively referring to table 1.HAT-CNCharacterization is formed corresponding using HAT-CN material
Film layer with a thickness ofSimilarly,Deng the thickness for characterizing its corresponding film layer.
CBP:5%Ir (piq)3It is then the Ir (piq) of the doping 5% in CBP material3。
Referring to table 2, the organic electroluminescence device that number is B is traditional use blue phosphor layer as blue light-emitting
143 organic electroluminescence device.In this embodiment, material and the thickness of each film layer used by each film layer point
Not are as follows: ITO/Ag/ITO/HAT-CN/NPB/TCTA/ CBP:5%Ir (piq)3 / BH-1:5%BD-1/BCP/Alq3 /Mg:Ag/AgWherein, the structural formula of each film layer organic material can be respectively referring to table 1.
Table 1
Table 2
By table 2, it is apparent that organic electroluminescence device using blue light quantum point layer as blue light-emitting 143
Red voltages are lower than traditional organic electroluminescence device using blue phosphor layer as blue light-emitting.
The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously
Limitations on the scope of the patent of the present invention therefore cannot be interpreted as.It should be pointed out that for those of ordinary skill in the art
For, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to guarantor of the invention
Protect range.Therefore, the scope of protection of the patent of the invention shall be subject to the appended claims.
Claims (9)
1. a kind of organic electroluminescence device, which is characterized in that including anode, hole transmission layer, luminescent layer, electron transfer layer and
Cathode；
The anode is oppositely arranged with the cathode；
The hole transmission layer is formed between the anode and the luminescent layer；
The luminescent layer is formed between the hole transmission layer and the electron transfer layer；
The electron transfer layer is formed between the luminescent layer and the cathode；
The luminescent layer includes red light luminescent layer, green light emitting layer and blue light-emitting；
The red light luminescent layer and the green light emitting layer are disposed adjacent, and are both formed on the blue light-emitting；And
The blue light-emitting is blue light quantum point layer；The material of main part of the red light luminescent layer and the green light emitting layer is heat
Activate delayed fluorescence material.
2. organic electroluminescence device according to claim 1, which is characterized in that the structure of the blue light quantum point layer is
Single layer structure.
3. organic electroluminescence device according to claim 1 or 2, which is characterized in that the amount of the blue light quantum point layer
Son point partial size is 2nm-10nm.
4. organic electroluminescence device according to claim 1, which is characterized in that the blue light-emitting with a thickness of
2nm-10nm。
5. organic electroluminescence device according to claim 4, which is characterized in that the blue light-emitting with a thickness of
2nm-3nm。
6. organic electroluminescence device according to claim 1 or 2, which is characterized in that the material of the blue light quantum point layer
Material is any one of CdSe, CdS, CdTe, ZnO, ZnS, ZnSe, PbSe, PbS, PbTe and InP or combination.
7. organic electroluminescence device according to claim 6, which is characterized in that the material of the blue light quantum point layer is
Any one of CdSe, ZnSe and CdS or combination.
8. organic electroluminescence device according to claim 1, which is characterized in that the thermal activation delayed fluorescence material
Triplet state and singlet energy level difference are less than 0.15eV.
9. organic electroluminescence device according to claim 8, which is characterized in that the thermal activation delayed fluorescence material
Triplet state and singlet energy level difference are less than or equal to 0.10eV.
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| TW201141306A (en) * | 2010-05-13 | 2011-11-16 | Au Optronics Corp | Organic light emitting diode structure and fabricating method thereof |
| CN101872845A (en) * | 2010-06-09 | 2010-10-27 | 友达光电股份有限公司 | Organic light emitting diode (LED) structure and manufacturing method thereof |
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