CN107785489A - Organic electroluminescence device - Google Patents
Organic electroluminescence device Download PDFInfo
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- CN107785489A CN107785489A CN201610737394.8A CN201610737394A CN107785489A CN 107785489 A CN107785489 A CN 107785489A CN 201610737394 A CN201610737394 A CN 201610737394A CN 107785489 A CN107785489 A CN 107785489A
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- blue light
- emitting
- organic electroluminescence
- electroluminescence device
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
- H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
Abstract
The invention discloses a kind of organic electroluminescence device, including anode, hole transmission layer, luminescent layer, electron transfer layer and negative electrode；Anode is oppositely arranged with negative electrode；Hole transmission layer is formed between anode and luminescent layer；Luminescent layer is formed between hole transmission layer and electron transfer layer；Electron transfer layer is formed between luminescent layer and negative electrode；Luminescent layer includes red light luminescent layer, green light emitting layer and blue light-emitting；Red light luminescent layer and green light emitting layer are disposed adjacent, and are both formed on blue light-emitting；And blue light-emitting is blue light quantum point layer.It uses blue light quantum point layer to solve the problems, such as that traditional organic electroluminescence device can cause the reduction of blue light efficiency when directly reducing the thickness of blue light-emitting as blue light-emitting.
Description
Technical field
The present invention relates to display device technical field, more particularly to a kind of organic electroluminescence device.
Background technology
At present, small-medium size AMOLED (Active-matrix organic light emitting diode, it is active
Matrix/organic light emitting diode (AMOLED) or active-matrix organic light emitting diode) display generally use FMM (Fine Metal Mask,
Metal light cover) evaporation mode produce.
It is blue to share generally by the structure setting of display device when preparing display using FMM evaporation mode generation
Photosphere structure (that is, increasing blue light-emitting above red, the green sub-pixel in display device) is realized in preparation technology
One of Mask of middle saving, to improve the yield of device and resolution ratio.And because the introducing of blu-ray layer can cause red, green phosphorescent layer to drive
The rise of dynamic voltage, usual voltage are raised in more than 1V, so as to cause device overall power to raise.Therefore, in order to avoid device
The rise of overall power, generally use directly reduce the thickness of blue light-emitting, to realize the reduction of red green glow driving voltage.
But during by directly reducing the thickness of blue light-emitting to realize the reduction of red-green glow driving voltage, often cause blue light
Efficiency reduces, so as to be unfavorable for the display performance of device.
The content of the invention
Based on this, it is necessary to for traditional organic electroluminescence device by directly reduce the thickness of blue light-emitting come
The reduction of blue light efficiency can be caused by realizing during the reduction of red-green glow driving voltage, the problem of so as to influence the display performance of device, be carried
For a kind of organic electroluminescence device.
To realize a kind of organic electroluminescence device that the object of the invention provides, including it is anode, hole transmission layer, luminous
Layer, electron transfer layer and negative electrode；
The anode is oppositely arranged with the negative electrode；
The hole transmission layer is formed between the anode and the luminescent layer；
The luminescent layer is formed between the hole transmission layer and the electron transfer layer；
The electron transfer layer is formed between the luminescent layer and the negative electrode；
The luminescent layer includes red light luminescent layer, green light emitting layer and blue light-emitting；
The red light luminescent layer and the green light emitting layer are disposed adjacent, and are both formed on the blue light-emitting；And
The blue light-emitting is blue light quantum point layer.
In one of the embodiments, the material of main part of the red light luminescent layer and the green light emitting layer prolongs for thermal activation
Slow fluorescent material.
In one of the embodiments, the structure of the blue light quantum point layer is single layer structure.
In one of the embodiments, the quantum point grain diameter of the blue light quantum point layer is 2nm-10nm.
In one of the embodiments, the thickness of the blue light-emitting is 2nm-10nm.
In one of the embodiments, the thickness of the blue light-emitting is 2nm-3nm.
In one of the embodiments, the material of the blue light quantum point layer be CdSe, CdS, CdTe, ZnO, ZnS,
Any of ZnSe, PbSe, PbS, PbTe and InP or combination.
In one of the embodiments, the material of the blue light quantum point layer be any of CdSe, ZnSe and CdS or
Combination.
In one of the embodiments, the triplet state of the thermal activation delayed fluorescence material is less than with singlet energy level difference
0.15eV。
In one of the embodiments, the triplet state of the thermal activation delayed fluorescence material and singlet energy level difference be less than or
Equal to 0.10eV.
Above-mentioned organic electroluminescence device, by setting red light luminescent layer to be disposed adjacent with green light emitting layer and being formed at indigo plant
On light luminescent layer, sharing for blue light-emitting is realized, while also sent out on this basis using blue light quantum point material as blue light
The luminescent material of photosphere, i.e. using blue light quantum point layer as blue light-emitting, so as to be moved using the high carrier of blue light quantum point
Shifting rate and thinner thickness, to realize the reduction of red-green glow driving voltage.At the same time it can also the blue spectrum that narrows, blue light is improved
Efficiency.Thus, it is while red-green glow driving voltage is effectively reduced, it is ensured that blue light efficiency, finally efficiently solves biography
When the organic electroluminescence device of system is by directly reducing the thickness of blue light-emitting to realize the reduction of red-green glow driving voltage
The reduction of blue light efficiency can be caused, the problem of so as to influence the display performance of device.
Brief description of the drawings
Fig. 1 is the vertical section structure schematic diagram of a specific embodiment of the organic electroluminescence device of the present invention；
Fig. 2 is the vertical section structure schematic diagram of the another specific embodiment of the organic electroluminescence device of the present invention.
Embodiment
To make technical solution of the present invention clearer, the present invention is made below in conjunction with drawings and the specific embodiments further detailed
Describe in detail bright.
First, it should be noted that the thickness and size of each film layer shown in accompanying drawing provided by the invention is only
The position of the film layer is characterized, is not used to limit the thickness magnitude relationship of each film layer.
Referring to Fig. 1, as a specific embodiment of the organic electroluminescence device 100 of the present invention, it include anode 120,
Hole transmission layer 130, luminescent layer 140, electron transfer layer 150 and negative electrode 160.Wherein, anode 120 is oppositely arranged with negative electrode 160.
Also, hole transmission layer 130, luminescent layer 140 and electron transfer layer 150 are respectively positioned between anode 120 and negative electrode 160.Specifically：
Hole transmission layer 130 is formed between anode 120 and luminescent layer 140.Luminescent layer 140 is formed at hole transmission layer 130 and electronics
Between transport layer 150.Electron transfer layer 150 is formed between luminescent layer 140 and negative electrode 160.Wherein, luminescent layer 140 includes red
Light luminescent layer 141, green light emitting layer 142 and blue light-emitting 143.Red light luminescent layer 141 and green light emitting layer 142 is adjacent sets
Put, and be both formed on blue light-emitting 143.Also, in the organic electroluminescence device 100 of the present invention, blue light-emitting
143 be blue light quantum point layer.
It using blue light quantum point layer as blue light-emitting 143 by organic electroluminescence device 100, (that is, being adopted
The blue phosphor layer in traditional shared blu-ray layer is replaced with blue light quantum point), and thermal activation delayed fluorescence material is used simultaneously
As red light luminescent layer 141 and the material of main part of green light emitting layer 142, the high carrier migration using blue light quantum point is realized
Rate and thinner thickness reduce influence of the blue light shared layer to the red and green luminous driving voltage of layer 140, it is achieved thereby that reduce red
The purpose of green glow driving voltage.Also, can be narrow using luminescent material of the blue light quantum point material as blue light-emitting 143
Change blue spectrum, so as to effectively improve blue light efficiency.
Likewise it is preferred that, in order to ensure the purity of red-green glow color, it is using blue light quantum point material as blue light emitting
On the basis of the luminescent material of layer 143, also simultaneously using thermal activation delayed fluorescence material as red light luminescent layer 141 and green glow
The material of main part of luminescent layer 142, to reduce by three in phosphorescence luminescent layer 140 (that is, red light luminescent layer 141 and green light emitting layer 142)
Line state exciton concentration, with avoid the exciton diffusion in red light luminescent layer 141 and green light emitting layer 142 to blue light quantum point layer (i.e.,
Blue light-emitting 143) in.
Thus, it is by using luminescent material of the blue light quantum point material as blue light-emitting 143, while also uses heat
Delayed fluorescence material is activated as red light luminescent layer 141 and the material of main part of green light emitting layer 142, feux rouges and green is being effectively ensured
While the photochromic purity of light, the driving voltage of feux rouges and green glow was both reduced, it is ensured that blue light efficiency so that organic electroluminescence
Luminescent device 100 can have good performance.
It should be noted that the structure of the organic electroluminescence device 100 of the present invention may be either top light emitting-type OLED, also may be used
For bottom light emitting-type OLED.
Referring to Fig. 1, to push up the structure of the organic electroluminescence device 100 of light emitting-type.Wherein, direction shown in arrow is red
The exit direction of light, green glow and blue light.Specifically：Pushing up the organic electroluminescence device 100 of light emitting-type includes anode 120, hole
Transport layer 130, luminescent layer 140, electron transfer layer 150 and negative electrode 160.Wherein, it is it will be appreciated by persons skilled in the art that positive
Pole 120 is formed directly on substrate 110, also can use the substrate 110 of conductive energy (such as：ITO) directly as anode
120.Meanwhile hole injection layer 170 is may also be formed between anode 120 and hole transmission layer 130.That is, directly in anode 120
Upper formation hole injection layer 170, then directly forms hole transmission layer 130 on hole injection layer 170 again.Luminescent layer 140 is then
Specifically include red light luminescent layer 141, green light emitting layer 142 and blue light-emitting 143.
Wherein, blue light-emitting 143 is formed directly on hole transmission layer 130, and due to the hair of blue light-emitting 143
Luminescent material is blue light quantum point material, thus the present invention organic electroluminescence device 100 in, blue light-emitting 143 it is micro-
The structure for seeing structure to be laid in after multiple blue light quantum point close-packed arrays on hole transmission layer 130.Meanwhile need to illustrate herein
, blue light quantum point layer may be either single layer structure, or sandwich construction.Wherein, preferably single layer structure.That is, blue light is sent out
The structure of photosphere 143 is the structure of single-layer blue light quantum point layer.Meanwhile in blue light-emitting 143, the amount of blue light quantum point layer
Son point particle diameter span be：2nm-10nm.Thus, when blue light-emitting 143 is single-layer blue light quantum point layer, blue light hair
The Thickness scope of photosphere 143 is：2nm-10nm.Preferably, the thickness of blue light-emitting 143 is 2nm-3nm.Now, it is blue
The quantum point grain diameter of light quanta point layer is 2nm-3nm.Meanwhile the material of blue light quantum point layer can be CdSe, CdS, CdTe, ZnO,
Any of ZnS, ZnSe, PbSe, PbS, PbTe and InP.Preferably, the material of blue light quantum point layer be CdSe, ZnSe and
Any of CdS.In addition, it should also be noted that, the formation of blue light-emitting 143 can directly use coating processes.
After directly blue light-emitting 143 are being formed on hole transmission layer 130 using blue light quantum point material, red light-emitting
Layer 141 and green light emitting layer 142 are then formed directly on blue light-emitting 143, so as to realize being total to for blue light-emitting 143
With.Wherein, red light luminescent layer 141 is disposed adjacent with green light emitting layer 142.Meanwhile red light luminescent layer 141 and green light emitting layer
142 agent structure is thermal activation delayed fluorescence material.Also, the triplet state of thermal activation delayed fluorescence material and singlet energy level
Difference is less than 0.15eV, preferably less than or equal to 0.10eV.Herein, it is necessary to which explanation, thermal activation delayed fluorescence material refer to
It is the material that charge transfer transition be present.Donor groups unit and acceptor groups list be present simultaneously in thermal activation delayed fluorescence material
Member.Wherein, donor groups unit is the group that a donor groups or more than two donor groups connect and compose.Acceptor groups
Unit mutually should be the group that an acceptor groups or more than two acceptor groups connect and compose.One or more donor groups lists
It is first to be directly connected to form thermal activation delayed fluorescence material with one or more acceptor groups units；Or one or more donors
Group unit and one or more acceptor groups units are connected to form thermal activation delayed fluorescence material respectively with linking group.Can be with
Understand, red light luminescent layer 141 and green light emitting layer 142 can be directly using the evaporation process systems of metal light cover processing procedure
It is standby.
After red light luminescent layer 141 and green light emitting layer 142 are being formed on blue light-emitting 143, you can sent out in feux rouges
On photosphere 141, green light emitting layer 142 and the blue light-emitting 143 that is not covered by red light luminescent layer 141 and green light emitting layer 142
Form electron transfer layer 150.And then negative electrode 160 is directly formed on electron transfer layer 150 again.Herein, it is necessary to illustrate, this
Art personnel are appreciated that may also include electron injecting layer 180 in organic electroluminescence device.Wherein, electronics is noted
Enter layer 180 to be formed between electron transfer layer 150 and negative electrode 160.That is, it is initially formed electron injecting layer on electron transfer layer 150
180, and then negative electrode 160 is formed on electron injecting layer 180 again, so as to ultimately form the organic electroluminescence of the top light emitting-type of the present invention
Luminescent device 100.
, wherein it is desired to illustrate, in the organic electroluminescence device 100 of the top light emitting-type shown in Fig. 1, each film layer is equal
It can be prepared using the evaporation process of metal light cover processing procedure.Other coating process can also be used, such as：Magnetron sputtering deposition work
Skill, coating processes etc. are realized.That is, each film layer in the organic electroluminescence device 100 of the present invention can use this
Any film-forming process well known to field realizes that it is not only limited in evaporation process.
In addition, referring to Fig. 2, as the another specific embodiment of the organic electroluminescence device 100 of the present invention, it can also be
The organic electroluminescence device 100 of bottom light emitting-type.That is, it can also be inverted structure.Wherein, direction shown in arrow is feux rouges, green
The exit direction of light and blue light.
Specifically, when the organic electroluminescence device 100 of the present invention is bottom light emitting-type device, the then direct shape of negative electrode 160
Into on substrate 110.Meanwhile in the organic electroluminescence device 100 of the present invention, because it may also include electron injecting layer
180, therefore, formed on substrate 110 after negative electrode 160, you can electron injecting layer 180 is formed directly on negative electrode 160.Enter
And electron transfer layer 150 is formed directly on electron injecting layer 180.Wherein, the material of main part of electron transfer layer 150 is preferably
ZnO (zinc oxide).Blue light-emitting 143 is then formed directly on electron transfer layer 150.Meanwhile blue light-emitting 143 is microcosmic
Structure, quantum grain particle size, the thickness of blue light-emitting 143 is in foregoing top emission type organic electro luminescent device
Have been carried out describing in detail in 100, here is omitted.
Red light luminescent layer 141 and green light emitting layer 142 are equally disposed adjacent and are formed directly into blue light-emitting 143
On.Also, the features such as the material of main part of red light luminescent layer 141 and green light emitting layer 142 are also in foregoing top light emitting-type
Elaborated in organic electroluminescence device 100, also no longer repeated herein.
Hole transmission layer 130 is then formed directly into red light luminescent layer 141, green light emitting layer 142 and not by red light luminescent layer
141 and green light emitting layer 142 cover blue light-emitting 143 on.Herein, it is necessary to illustrate, in the bottom light emitting-type of the present invention
In one specific embodiment of the organic electroluminescence device 100 of structure, it is same between anode 120 and hole transmission layer 130
It may also be formed with hole injection layer 170.That is, after directly forming hole injection layer 170 on hole transmission layer 130, then in hole
Anode 120 is directly formed on implanted layer 170.So as to it ultimately form the organic electroluminescence device 100 of bottom light emitting-type.
Equally, in the organic electroluminescence device 100 of bottom light emitting-type, the preparation technology of each film layer both can be using gold
Prepared by the evaporation process for belonging to optical cover process, can also adopt other film-forming process known in the field and prepare.Need what is illustrated
It is that in the organic electroluminescence device 100 of bottom light emitting-type, the preparation technology of electron transfer layer 150 and blue light-emitting 143 is excellent
Elect coating processes as.
Wherein, in order to illustrate the present invention organic electroluminescence device 100 by using blue light quantum point layer replace tradition
Blue phosphor layer can effectively reduce red-green glow driving voltage as the blue light shared layer in device, while can also ensure that indigo plant
Light efficiency, below to carry out corresponding performance test to two kinds of different organic electroluminescence devices 100.
Referring to table 2, the organic electroluminescence device 100 that numbering is A is that being used as using blue light quantum point layer for the present invention is blue
The organic electroluminescence device 100 of light luminescent layer 143, its structure are top light emitting-type.Wherein, in this embodiment, its each film
Material and the thickness of each film layer are respectively used by layer：ITO/Ag/ITO/HAT-CN/NPB/TCTA/CBP:5%Ir (piq)3 /B-QD/BCP/Alq3 /Mg:Ag/Ag Wherein, blue light quantum point layer uses CdSe quantum dot.Also, each film layer
The structural formula of organic material can be respectively referring to table 1.HAT-CNCharacterize the corresponding film layer formed using HAT-CN materials
Thickness beSimilarly,Deng the thickness for characterizing its corresponding film layer.CBP:
5%Ir (piq)3It is then the Ir (piq) of the doping 5% in CBP materials3。
Referring to table 2, organic electroluminescence device that numbering is B be it is traditional using blue phosphor layer as blue light-emitting
143 organic electroluminescence device.In this embodiment, material and the thickness of each film layer point used by its each film layer
It is not：ITO/Ag/ITO/HAT-CN/NPB/TCTA/CBP:5%Ir (piq)3 /BH-1:5%BD-1/BCP/Alq3 /Mg:Ag/AgWherein, the structural formula of each film layer organic material can be respectively referring to table 1.
Table 1
Table 2
By table 2, it is apparent that using organic electroluminescence device of the blue light quantum point layer as blue light-emitting 143
Red voltages are less than traditional using organic electroluminescence device of the blue phosphor layer as blue light-emitting.
Embodiment described above only expresses the several embodiments of the present invention, and its description is more specific and detailed, but simultaneously
Therefore the limitation to the scope of the claims of the present invention can not be interpreted as.It should be pointed out that for one of ordinary skill in the art
For, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the guarantor of the present invention
Protect scope.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (10)
- A kind of 1. organic electroluminescence device, it is characterised in that including anode, hole transmission layer, luminescent layer, electron transfer layer and Negative electrode；The anode is oppositely arranged with the negative electrode；The hole transmission layer is formed between the anode and the luminescent layer；The luminescent layer is formed between the hole transmission layer and the electron transfer layer；The electron transfer layer is formed between the luminescent layer and the negative electrode；The luminescent layer includes red light luminescent layer, green light emitting layer and blue light-emitting；The red light luminescent layer and the green light emitting layer are disposed adjacent, and are both formed on the blue light-emitting；AndThe blue light-emitting is blue light quantum point layer.
- 2. organic electroluminescence device according to claim 1, it is characterised in that the red light luminescent layer and the green glow The material of main part of luminescent layer is thermal activation delayed fluorescence material.
- 3. organic electroluminescence device according to claim 1, it is characterised in that the structure of the blue light quantum point layer is Single layer structure.
- 4. the organic electroluminescence device according to claim 1 or 3, it is characterised in that the amount of the blue light quantum point layer Son point particle diameter is 2nm-10nm.
- 5. organic electroluminescence device according to claim 1, it is characterised in that the thickness of the blue light-emitting is 2nm-10nm。
- 6. organic electroluminescence device according to claim 5, it is characterised in that the thickness of the blue light-emitting is 2nm-3nm。
- 7. the organic electroluminescence device according to claim 1 or 3, it is characterised in that the material of the blue light quantum point layer Expect for any of CdSe, CdS, CdTe, ZnO, ZnS, ZnSe, PbSe, PbS, PbTe and InP or combination.
- 8. organic electroluminescence device according to claim 7, it is characterised in that the material of the blue light quantum point layer is Any of CdSe, ZnSe and CdS or combination.
- 9. organic electroluminescence device according to claim 2, it is characterised in that the thermal activation delayed fluorescence material Triplet state is less than 0.15eV with singlet energy level difference.
- 10. organic electroluminescence device according to claim 9, it is characterised in that the thermal activation delayed fluorescence material Triplet state and singlet energy level difference be less than or equal to 0.10eV.
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| WO2021152790A1 (en) * | 2020-01-30 | 2021-08-05 | シャープ株式会社 | Display device and method for manufacturing display device |
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