CN107785407A - A kind of OLED display panel and display device - Google Patents
A kind of OLED display panel and display device Download PDFInfo
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- CN107785407A CN107785407A CN201711124243.6A CN201711124243A CN107785407A CN 107785407 A CN107785407 A CN 107785407A CN 201711124243 A CN201711124243 A CN 201711124243A CN 107785407 A CN107785407 A CN 107785407A
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- 239000010409 thin film Substances 0.000 claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 54
- 239000010410 layer Substances 0.000 claims description 34
- 239000010408 film Substances 0.000 claims description 30
- 230000004888 barrier function Effects 0.000 claims description 14
- 230000005611 electricity Effects 0.000 claims description 11
- 239000011229 interlayer Substances 0.000 claims description 11
- 239000012212 insulator Substances 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 4
- -1 grid Substances 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims description 2
- 101100214488 Solanum lycopersicum TFT2 gene Proteins 0.000 description 22
- 101100489584 Solanum lycopersicum TFT1 gene Proteins 0.000 description 14
- 229920001621 AMOLED Polymers 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000004069 differentiation Effects 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Geometry (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The invention discloses a kind of OLED display panel and display device, to increase the aperture opening ratio of OLED display panel.The OLED display panel, including：Underlay substrate；The thin film transistor (TFT) being arranged on the underlay substrate, and the power supply voltage signal line electrically connected with the thin film transistor (TFT)；The OLED luminescent devices being arranged on the thin film transistor (TFT), and the storage capacitance electrically connected with the power supply voltage signal line；Orthographic projection of the storage capacitance on the underlay substrate has overlapping region with orthographic projection of the power supply voltage signal line on the underlay substrate.
Description
Technical field
The present invention relates to display technology field, more particularly to a kind of OLED display panel and display device.
Background technology
Active matrix organic light-emitting diode (Active-matrix organic light emitting diode,
AMOLED) display has wide market application.In the prior art, bottom illuminating OLED display device is mainly used in large scale and shown
Show, such as OLED TVs.But there is the problem of aperture opening ratio is low in large scale OLED display always.
For example, the structure of bottom illuminating OLED display panel, (by taking 2T1C as an example) as shown in Figure 1, electric capacity Cs two electrodes
The region being generally arranged between TFT1 and TFT2, the grid layer and other layer of metal for being utilized respectively TFT1 and TFT2 are formed
Cs.Therefore need to take certain area, had a strong impact on the aperture opening ratio of OLED.
The content of the invention
The present invention provides a kind of OLED display panel and display device, to increase the aperture opening ratio of OLED display panel.
The embodiments of the invention provide a kind of OLED display panel, the display panel includes：
Underlay substrate；
The thin film transistor (TFT) being arranged on the underlay substrate, and the power supply electricity electrically connected with the thin film transistor (TFT)
Press signal wire；
The OLED luminescent devices being arranged on the thin film transistor (TFT), and electrically connected with the power supply voltage signal line
Storage capacitance；
Orthographic projection of the storage capacitance on the underlay substrate is with the power supply voltage signal line in the substrate base
Orthographic projection on plate has overlapping region.
In a kind of possible embodiment, in above-mentioned display panel provided in an embodiment of the present invention, the OLED lights
Device includes being successively set on first electrode, luminescent layer, pixel defining layer and the second electrode on the thin film transistor (TFT)；
The storage capacitance includes the 3rd electrode and the 4th electrode；
Wherein, the 3rd electrode and the first electrode are set and mutually insulated with layer, the 4th electrode with it is described
Second electrode is set with layer and mutually insulated.
In a kind of possible embodiment, in above-mentioned display panel provided in an embodiment of the present invention, the film crystal
Pipe includes the switching thin-film transistor set with layer and driving thin film transistor (TFT).
In a kind of possible embodiment, in above-mentioned display panel provided in an embodiment of the present invention, the film crystal
Pipe include being successively set on active layer on the underlay substrate, gate insulator, grid, interlayer insulating film, the first pole and
Second pole；
The display panel also includes：First be arranged between the thin film transistor (TFT) and the OLED luminescent devices is exhausted
Edge layer；
First electrode in the OLED luminescent devices passes through the first via through first insulating barrier and the drive
The first pole electrical connection of dynamic thin film transistor (TFT).
In a kind of possible embodiment, in above-mentioned display panel provided in an embodiment of the present invention, the supply voltage
Signal wire electrically connects with the second pole of the driving thin film transistor (TFT).
In a kind of possible embodiment, in above-mentioned display panel provided in an embodiment of the present invention, the 4th electrode
It is electrically connected with by the second via and the power supply voltage signal line, second via is through the pixel defining layer and described
First insulating barrier, and orthographic projection of second via on the underlay substrate is located at the 3rd via on the underlay substrate
Orthographic projection in, wherein, the 3rd via runs through the 3rd electrode, makes the 3rd electrode and the 4th electrode mutual
Insulation；
3rd electrode is electrically connected with by the grid of the 4th via and the driving thin film transistor (TFT), the 4th mistake
First insulating barrier and the interlayer insulating film, and orthographic projection position of the 4th via on the underlay substrate are run through in hole
In the 5th via in the orthographic projection on the underlay substrate, wherein, the 5th via runs through the power supply voltage signal line,
Make the 3rd electrode and the power supply voltage signal line mutually insulated.
In a kind of possible embodiment, in above-mentioned display panel provided in an embodiment of the present invention, the switch film
Second pole of transistor is electrical by the grid of the 6th via through the interlayer insulating film and the driving thin film transistor (TFT)
Connection.
In a kind of possible embodiment, in above-mentioned display panel provided in an embodiment of the present invention, the first electrode
For anode, the second electrode is negative electrode.
In a kind of possible embodiment, in above-mentioned display panel provided in an embodiment of the present invention, the display panel
Also include：Data wire and scan line；
The data wire electrically connects with the first pole of the switching thin-film transistor, the scan line and the switch film
The grid electrical connection of transistor.
Correspondingly, the embodiment of the present invention additionally provides a kind of display device, including above-mentioned provided in an embodiment of the present invention
A kind of OLED display panel.
The present invention has the beneficial effect that：
In OLED display panel and display device provided in an embodiment of the present invention, the display panel includes：Underlay substrate；
The thin film transistor (TFT) being arranged on the underlay substrate, and the power supply voltage signal electrically connected with the thin film transistor (TFT)
Line；The OLED luminescent devices being arranged on the thin film transistor (TFT), and deposited with what the power supply voltage signal line electrically connected
Storing up electricity is held；Orthographic projection of the storage capacitance on the underlay substrate is with the power supply voltage signal line in the underlay substrate
On orthographic projection there is overlapping region.Therefore, in OLED display panel provided in an embodiment of the present invention, storage capacitance is arranged on
There is overlapping region with power supply voltage signal line, because power supply voltage signal line is arranged on non-open areas so that storage electricity
Appearance is arranged on non-open areas, so as to further increase the aperture opening ratio of OLED display panel.
Brief description of the drawings
Fig. 1 is a kind of structural representation for OLED display panel that prior art provides；
Fig. 2 is a kind of structural representation of OLED display panel provided in an embodiment of the present invention；
Fig. 3 is the structural representation of second of OLED display panel provided in an embodiment of the present invention；
Fig. 4 is the structural representation of the third OLED display panel provided in an embodiment of the present invention；
Fig. 5 is a kind of circuit diagram of driving OLED luminescent devices provided in an embodiment of the present invention；
Fig. 6 is the structural representation of the 4th kind of OLED display panel provided in an embodiment of the present invention；
Fig. 7 is a kind of structural representation of display device provided in an embodiment of the present invention.
Embodiment
It is understandable to enable the above objects, features and advantages of the present invention to become apparent, below in conjunction with accompanying drawing and implementation
The present invention will be further described for example.However, example embodiment can be implemented in a variety of forms, and it is not understood as limited to
Embodiment set forth herein；On the contrary, these embodiments are provided so that the present invention more comprehensively and completely, and by example embodiment party
The design of formula is comprehensively communicated to those skilled in the art.Identical reference represents same or similar knot in figure
Structure, thus repetition thereof will be omitted.It is described in the present invention expression position and direction word, be using accompanying drawing as
The explanation that example is carried out, but can also make a change as needed, make change and be all contained in the scope of the present invention.The present invention
Accompanying drawing be only used for illustrate relative position relation, the thickness at some positions employs the plotting mode lavished praise on oneself in order to understand, attached
Thickness in figure does not represent the proportionate relationship of actual thickness.
It should be noted that detail is elaborated in the following description in order to fully understand the present invention.But this hair
Bright to be different from other manner described here with a variety of and be implemented, those skilled in the art can be without prejudice in the present invention
Similar popularization is done in the case of culvert.Therefore the present invention is not limited by following public embodiment.Such as in specification and
Some vocabulary has been used to censure specific components among claim.Those skilled in the art are, it is to be appreciated that hardware manufacturer can
Same component can be called with different nouns.This specification and claims are not used as differentiation group with the difference of title
The mode of part, but it is used as the criterion of differentiation with the difference of component functionally.Such as work as in specification in the whole text and claim
Mentioned in "comprising" be an open language, therefore " include but be not limited to " should be construed to.Specification subsequent descriptions are real
The better embodiment of the application is applied, so the description is for the purpose of the rule for illustrating the application, is not limited to
Scope of the present application.The protection domain of the application is worked as to be defined depending on appended claims institute defender.It should be understood that work as element such as
Layer, film, region or substrate be referred to as positioned at another element " on " when, its can on another element, or
One or more intermediary elements can be inserted with.
The embodiments of the invention provide a kind of OLED display panel and display device, to increase opening for OLED display panel
Mouth rate.
Referring to Fig. 2, a kind of OLED display panel provided in an embodiment of the present invention, display panel includes：Underlay substrate (Fig. 2
In be not drawn into)；The thin film transistor (TFT) TFT (including TFT1 and TFT2 in Fig. 2) being arranged on underlay substrate, and and film
The power supply voltage signal line VDD of transistor TFT electrical connections；The OLED luminescent devices being arranged on thin film transistor (TFT) TFT, and
The storage capacitance Cs electrically connected with power supply voltage signal line VDD；Orthographic projections of the storage capacitance Cs on underlay substrate and power supply electricity
Press orthographic projections of the signal wire VDD on underlay substrate that there is overlapping region.
Specifically, the power supply voltage signal line VDD in the embodiment of the present invention is used to send display to OLED luminescent devices
Voltage signal.In the present invention, storage capacitance has overlapping region, including storage capacitance in substrate with power supply voltage signal line VDD
Orthographic projection on substrate is fully located at power supply voltage signal line in the orthographic projection on underlay substrate, or, storage capacitance is serving as a contrast
The subregion of orthographic projection on substrate is located at power supply voltage signal line in the orthographic projection on underlay substrate.Wherein, in Fig. 2
Only with but be not limited to orthographic projection of the storage capacitance on underlay substrate and be fully located at power supply voltage signal line on underlay substrate
Illustrated exemplified by orthographic projection.
Storage capacitance is arranged on power supply voltage signal line compared to prior art, in the embodiment of the present invention have it is overlapping
Region, because power supply voltage signal line is arranged on non-open areas, therefore, the present invention in storage capacitance be arranged on non-opening
Region, so as to further increase the aperture opening ratio of OLED display panel.
In a particular embodiment, in order to further explain how set storage capacitance so that storage capacitance and supply voltage
Signal wire VDD has overlapping region and interconnection, is cut to obtain structure shown in Fig. 3 along P1-P2 directions by Fig. 2, such as
Shown in Fig. 3, OLED luminescent devices include being successively set on first electrode 021, luminescent layer 022, the pixel on underlay substrate 01
Definition layer 023 and second electrode 024；Storage capacitance Cs includes the 3rd electrode C1 and the 4th electrode C2；Wherein, the 3rd electrode C1 with
First electrode 021 is set with layer and mutually insulated, and the 4th electrode C2 is set with second electrode 024 with layer and mutually insulated.Therefore,
The 3rd electrode C1 and the 4th electrode C2 in the embodiment of the present invention in storage capacitance Cs can make simultaneously with OLED luminescent devices,
So as to further simplify the technique for making display panel.
It should be noted that the 3rd electrode and the size of the 4th electrode and the 3rd electrode in storage capacitance of the present invention and
The distance between 4th electrode, it can be configured according to the size for being actually needed middle storage capacitance, be not specifically limited herein.
In a particular embodiment, in above-mentioned display panel provided in an embodiment of the present invention, referring to Fig. 2, thin film transistor (TFT) TFT
Including switching thin-film transistor TFT1 and driving thin film transistor (TFT) TFT2.Wherein, switching thin-film transistor TFT1 and driving film
Each film layer in transistor TFT2 is set with layer respectively.
Specifically, cut to obtain structure shown in Fig. 4 along P3-P4 directions according to Fig. 2, as shown in figure 4, driving film
Transistor TFT2 includes being successively set on active layer 031, gate insulator 037, grid 032, the interlayer on underlay substrate 01
Insulating barrier 033, the first pole 034 and the second pole 035；Display panel also includes：It is arranged on driving thin film transistor (TFT) TFT2 and OLED
The first insulating barrier 036 between luminescent device；First electrode 021 in OLED luminescent devices passes through through the first insulating barrier 036
The first via V1 with drive thin film transistor (TFT) the first pole 034 electrically connect.
It should be noted that driving thin film transistor (TFT) TFT2 in the embodiment of the present invention only with but be not limited to top gate type knot
Structure, bottom-gate type configuration can also be included.The first pole 034 in the embodiment of the present invention can be source electrode, and the second pole 035 is drain electrode；
Or first pole 034 can be drain electrode, the second pole 035 is source electrode.It is not specifically limited herein.
In a particular embodiment, in above-mentioned display panel provided in an embodiment of the present invention, referring to Fig. 4, power supply voltage signal
Line VDD is with driving thin film transistor (TFT) TFT2 the second pole 035 to electrically connect.Specifically, power supply voltage signal line VDD and driving film
First pole of transistor or second is extremely the same as layer setting.
Specifically, when realizing that OLED luminescent devices are luminous, it is necessary to pass through switching thin-film transistor TFT1 and driving film
Transistor TFT2 unlatching, power supply voltage signal line VDD voltage signal is supplied to luminescent device.As shown in figure 5, driving
OLED luminescent devices carry out luminous circuit structure, including switching thin-film transistor TFT1, driving thin film transistor (TFT) TFT2 and
Storage capacitance Cs, wherein, when scan line 05 is opening signal, switching thin-film transistor TFT1 is opened switching thin-film transistor TFT1
Open and the signal in data wire 04 is supplied to storage capacitance Cs and drives thin film transistor (TFT) TFT2 grid so that driving is thin
Power supply voltage signal line VDD voltage signal is supplied to OLED luminescent devices by film transistor TFT2.Storage capacitance in the present invention
Cs the 4th electrode electrically connects with power supply voltage signal line VDD, storage capacitance Cs the 3rd electrode and driving thin film transistor (TFT)
TFT2 grid electrical connection.
It should be noted that when Fig. 2 is cut along P1-P2 direction, it is clear that it is brilliant not cut to driving film
Body pipe TFT2 position, due to when forming driving thin film transistor (TFT) TFT2, gate insulator 037, the interlayer of flood can be formed
The insulating barrier 036 of insulating barrier 033 and first, therefore, when being cut along P1-P2 direction, OLED luminescent devices and lining
Also include gate insulator 037, the insulating barrier 036 of interlayer insulating film 033 and first between substrate 01.In addition, display panel
In also include power supply voltage signal line VDD and data wire 04, wherein, power supply voltage signal line VDD and data wire 04 can same layers
Setting and mutually insulated, are not specifically limited herein.
The 4th electrode C2 and power supply voltage signal line VDD that storage capacitance Cs is described below by specific embodiment are electrically connected
Connect, the 3rd electrode C1 is with driving the mode that thin film transistor (TFT) TFT2 grid electrically connects.
In a particular embodiment, in above-mentioned display panel provided in an embodiment of the present invention, Fig. 2 is carried out along P3-P4 directions
Cutting obtains the structure shown in Fig. 4, as shown in figure 4, the 4th electrode C2 passes through the second via V2 and power supply voltage signal line VDD electricity
Property connection, wherein, the second via V2 runs through the insulating barrier 036 of pixel defining layer 023 and first, and the second via V2 is in underlay substrate
On orthographic projection be located at the 3rd via V3 in the orthographic projection on underlay substrate, wherein, the 3rd via V3 runs through the 3rd electrode C1,
Make the 3rd electrode C1 and the 4th electrode C2 mutually insulateds；Fig. 2 is cut to obtain structure shown in Fig. 6 along P5-P6 directions, such as
Shown in Fig. 6, the 3rd electrode C1 is electrically connected with by the 4th via V4 and driving transistor TFT2 grid 032, the 4th via V4
Through the first insulating barrier 036 and interlayer insulating film 033, and orthographic projections of the 4th via V4 on underlay substrate is located at the 5th via
V5 is in the orthographic projection on underlay substrate, wherein, the 5th via V5 runs through power supply voltage signal line VDD, make the 3rd electrode C1 with
The power supply voltage signal line VDD mutually insulateds.
Specifically, the grid that the 3rd electrode C1 in storage capacitance Cs passes through the 4th via V4 and driving transistor TFT2
032 is electrically connected with, because driving transistor TFT2 grid 032 and switching thin-film transistor TFT1 source electrode or drain electrode are electrically connected
Connect, therefore, the 3rd electrode C1 electrically connects with switching thin-film transistor TFT1 source electrode or drain electrode.The 4th via V4 exists in the present invention
Orthographic projection on underlay substrate is located at the 5th via V5 in the orthographic projection on underlay substrate so that the 4th via V4 radius is small
In the 5th via V5 radius, i.e. the 4th via is located in the range of the 5th via.In the embodiment of the present invention, the 3rd electrode C1 with
When driving thin film transistor (TFT) TFT2 grid 032 to be electrically connected with, although have passed through film layer where power supply voltage signal line, with
Power supply voltage signal line mutually insulated.Specifically, the 4th electrode C2 in storage capacitance Cs passes through the second via V2 and power supply electricity
Press signal wire VDD to be electrically connected with, in the present invention orthographic projections of the second via V2 on underlay substrate be located at the 3rd via V3 and serving as a contrast
In orthographic projection on substrate so that the second via V2 radius is less than the 3rd via V3 radius, i.e. the second via V2 is located at
In the range of 3rd via V3.In the embodiment of the present invention, when the 4th electrode electrically connects with power supply voltage signal line, although have passed through
Film layer where 3rd electrode C1, but with the 3rd electrode C1 mutually insulateds.
It should be noted that the 3rd electrode C1 in storage capacitance can also use other modes electrical connection driving film brilliant
The grid of body pipe, the 4th electrode C2 in storage capacitance can also use other modes electric connection of power supply voltage signal line.
In a particular embodiment, in above-mentioned display panel provided in an embodiment of the present invention, referring to Fig. 6, switch film crystal
The grid that pipe TFT1 the second pole 135 passes through the 6th via V6 through interlayer insulating film 033 and driving thin film transistor (TFT) TFT2
032 is electrically connected with.
In a particular embodiment, in above-mentioned display panel provided in an embodiment of the present invention, first electrode is anode, and second is electric
Extremely negative electrode.Specifically, the first electrode in the embodiment of the present invention can be anode, and second electrode is negative electrode；Or first electricity
Extremely negative electrode, second electrode are anode.First electrode in the embodiment of the present invention is used as anode and can be by various conduction material
Material is formed.For example, first electrode (anode as organic luminescent device OLED) can be formed as transparent electricity according to its purposes
Pole or reflecting electrode.When first electrode is formed as transparency electrode, first electrode can include tin indium oxide (ITO), indium oxide
Zinc (IZO), zinc oxide (ZnO) or indium oxide (In2O3) etc., when first electrode is formed as reflecting electrode, reflecting layer can be by
Ag, magnesium (Mg), Al, Pt, Pd, Au, Ni, Nd, iridium (Ir), Cr or their mixture are formed, and ITO, IZO, ZnO or
In2O3 etc. can be formed on the reflecting layer.Second electrode (negative electrode as organic luminescent device OLED) is located on luminescent layer.
Second electrode can be formed by Ag or Al.If applying voltage between the first electrode and the second electrode, luminescent layer transmitting can
Light is seen, so as to realize the image that can be identified by user.
In a particular embodiment, in above-mentioned display panel provided in an embodiment of the present invention, referring to Fig. 2, display panel also wraps
Include：Data wire 04 and scan line 05；Data wire 04 electrically connects with switching thin-film transistor TFT1 the first pole, and scan line 05 is with opening
Close thin film transistor (TFT) TFT1 grid electrical connection.
Based on same invention thought, the embodiment of the present invention additionally provides a kind of display device, including the embodiment of the present invention carries
Any of the above-described kind of the OLED display panel supplied.As shown in fig. 6, it can include：Such as above-mentioned display provided in an embodiment of the present invention
Panel.The display device can be：Mobile phone (as shown in Figure 6), tablet personal computer, television set, display, notebook computer, number
Any product or part with display function such as photo frame, navigator.The embodiment of the display device may refer to above-mentioned display
The embodiment of panel, repeat part and repeat no more.
In summary, in OLED display panel and display device provided in an embodiment of the present invention, display panel includes：Substrate
Substrate；The thin film transistor (TFT) being arranged on underlay substrate, and the power supply voltage signal line electrically connected with thin film transistor (TFT)；If
Put the OLED luminescent devices on thin film transistor (TFT), and the storage capacitance electrically connected with power supply voltage signal line；Storage electricity
The orthographic projection held on the underlay substrate has overlapping region with orthographic projection of the power supply voltage signal line on underlay substrate.Cause
This, in OLED display panel provided in an embodiment of the present invention, has by the way that storage capacitance is arranged on power supply voltage signal line
Overlapping region, because power supply voltage signal line is generally located on non-open areas so that storage capacitance is not arranged in open region
Domain, so as to further increase the aperture opening ratio of OLED display panel.
Obviously, those skilled in the art can carry out the essence of various changes and modification without departing from the present invention to the present invention
God and scope.So, if these modifications and variations of the present invention belong to the scope of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to comprising including these changes and modification.
Claims (10)
1. a kind of OLED display panel, it is characterised in that the display panel includes：
Underlay substrate；
The thin film transistor (TFT) being arranged on the underlay substrate, and the supply voltage letter electrically connected with the thin film transistor (TFT)
Number line；
The OLED luminescent devices being arranged on the thin film transistor (TFT), and deposited with what the power supply voltage signal line electrically connected
Storing up electricity is held；
Orthographic projection of the storage capacitance on the underlay substrate is with the power supply voltage signal line on the underlay substrate
Orthographic projection there is overlapping region.
2. display panel according to claim 1, it is characterised in that the OLED luminescent devices include being successively set on institute
State first electrode, luminescent layer, pixel defining layer and the second electrode on thin film transistor (TFT)；
The storage capacitance includes the 3rd electrode and the 4th electrode；
Wherein, the 3rd electrode and the first electrode are the same as layer setting and mutually insulated, the 4th electrode and described second
Electrode is set with layer and mutually insulated.
3. display panel according to claim 2, it is characterised in that the thin film transistor (TFT) includes switching thin-film transistor
With driving thin film transistor (TFT).
4. display panel according to claim 3, it is characterised in that the thin film transistor (TFT) is described including being successively set on
Active layer, gate insulator, grid, interlayer insulating film, the first pole and the second pole on underlay substrate；
The display panel also includes：The first insulation being arranged between the thin film transistor (TFT) and the OLED luminescent devices
Layer；
First electrode in the OLED luminescent devices is thin by the first via through first insulating barrier and the driving
The first pole electrical connection of film transistor.
5. display panel according to claim 4, it is characterised in that the power supply voltage signal line and the driving film
The second pole electrical connection of transistor.
6. display panel according to claim 5, it is characterised in that the 4th electrode passes through the second via and the electricity
Source voltage signal line is electrically connected with, and second via runs through the pixel defining layer and first insulating barrier, and described the
Orthographic projection of two vias on the underlay substrate is located at the 3rd via in the orthographic projection on the underlay substrate, wherein, institute
State the 3rd via and run through the 3rd electrode, make the 3rd electrode and the 4th electrode mutually insulated；
3rd electrode is electrically connected with by the grid of the 4th via and the driving thin film transistor (TFT), and the 4th via passes through
Wear first insulating barrier and the interlayer insulating film, and orthographic projection of the 4th via on the underlay substrate is positioned at the
Five vias are in the orthographic projection on the underlay substrate, wherein, the 5th via runs through the power supply voltage signal line, makes institute
State the 3rd electrode and the power supply voltage signal line mutually insulated.
7. display panel according to claim 6, it is characterised in that
Second pole of the switching thin-film transistor passes through the 6th via through the interlayer insulating film and the driving film
The grid of transistor is electrically connected with.
8. display panel according to claim 2, it is characterised in that the first electrode is anode, the second electrode
For negative electrode.
9. display panel according to claim 4, it is characterised in that the display panel also includes：
Data wire and scan line；
The data wire electrically connects with the first pole of the switching thin-film transistor, the scan line and the switch film crystal
The grid electrical connection of pipe.
10. a kind of display device, it is characterised in that including the OLED display panel described in any claims of claim 1-9.
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