CN107784939A - Special-shaped display screen and the display device for integrating special-shaped display screen - Google Patents
Special-shaped display screen and the display device for integrating special-shaped display screen Download PDFInfo
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- CN107784939A CN107784939A CN201711048781.1A CN201711048781A CN107784939A CN 107784939 A CN107784939 A CN 107784939A CN 201711048781 A CN201711048781 A CN 201711048781A CN 107784939 A CN107784939 A CN 107784939A
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Abstract
The present invention relates to the display device of special-shaped display screen and integrated special-shaped display screen, the special-shaped display screen has contour line to define the scope of effective display area；The main viewing area that the effective display area includes the edge viewing area of the neighbouring contour line and surrounded by the edge viewing area；The special-shaped display screen includes：It is distributed in the pixel cell of the main viewing area and some repeated arrangements in edge viewing area；Drive the first kind of the pixel cell of the main viewing area to drive thin film transistor (TFT) and drive the second class driving thin film transistor (TFT) of the pixel cell of the edge viewing area；Wherein, under identical electricity environment, the driving current that the second class driving thin film transistor (TFT) provides is less than the driving current that first kind driving thin film transistor (TFT) provides, so as to which the brightness of edge viewing area is turned down, and reduces sawtooth sense or granular sensation.
Description
Technical field
The present invention relates to display technology field, more particularly to the display of a kind of special-shaped display screen and integrated special-shaped display screen
Device.
Background technology
In conventional art, display screen includes the pixel being at least made up of green sub-pixels, blue subpixels, red sub-pixel
Unit.Several pixel cells form pel array to show picture.With the development that display screen diversification is applied, display screen
Profile need according to concrete application occasion accommodation.That is, it is necessary to design different from conventional square tabular
" abnormity screen ", such as spherical screen, polyhedron screen etc..
During conventional art is realized, inventor has found following technical problem be present：
Pixel cell has certain bulk.In other words, pixel cell can be regarded as having in microstructure
Certain radial dimension of point or particle.And the contour line of special-shaped display screen is plane smooth curve or space smooth curve.Along different
The pixel cell of the contour line distribution of shape display screen, when micro-scale is observed, is presented obvious sawtooth sense or granular sensation.
The content of the invention
Based on this, it is necessary to which the pixel cell being distributed for the contour line of above-mentioned special-shaped display screen is observed in micro-scale
When, the technical problem of obvious sawtooth sense is presented, there is provided a solution.
A kind of special-shaped display screen, the special-shaped display screen have contour line to define the scope of effective display area；
The effective display area includes the edge viewing area of the neighbouring contour line and by edge viewing area encirclement
Main viewing area；
The special-shaped display screen includes：
The pixel cell of some repeated arrangements is distributed in the main viewing area and the edge viewing area；
The main viewing area is by first kind driving thin film transistor (TFT) driving；
The edge viewing area is by the driving thin film transistor (TFT) driving of the second class；
Under identical electricity environment, the driving current of the main viewing area is more than the driving electricity of the edge viewing area
Stream.
In one of the embodiments, the pixel cell of the edge viewing area is the picture for meeting condition as defined below
Plain unit：
The normal distance of the center of the pixel cell and the contour line is no more than default first distance threshold.
In one of the embodiments, the driving current and the grid source layer capacitance positive of pixel driver thin film transistor (TFT)
Close；
The grid source layer capacitance of the second class driving thin film transistor (TFT) is less than first kind driving thin film transistor (TFT)
Grid source layer capacitance.
In one of the embodiments, the grid source layer capacitance of the second class driving thin film transistor (TFT) and the first kind
The ratio of the grid source layer capacitance of thin film transistor (TFT) is driven in 0.1-0.9 scopes.
In one of the embodiments, the facing area of the grid active layer of second class driving thin film transistor (TFT) is described the
0.1-0.9 times of the facing area of the grid active layer of one kind driving thin film transistor (TFT).
In one of the embodiments, the facing area of the grid active layer of the first kind driving thin film transistor (TFT) is at 50 squares
Micron is between 300 square microns.
In one of the embodiments, the spacing between the grid active layer of the second class driving thin film transistor (TFT) is described first
Class drives 1.1-10 times of the spacing between the grid active layer of thin film transistor (TFT).
In one of the embodiments, between the grid active layer of the first kind driving thin film transistor (TFT) spacing at 800 angstroms extremely
Between 1500 angstroms.
In one of the embodiments, the dielectric of the dielectric medium between the grid active layer of the second class driving thin film transistor (TFT) is normal
Number drives 0.1-0.9 times of the dielectric constant of the dielectric medium between the grid active layer of thin film transistor (TFT) for the first kind.
The application also provides a kind of display device of integrated special-shaped display screen, and the special-shaped display screen has contour line with boundary
Determine effective display area；
The effective display area includes what is surrounded adjacent to the edge viewing area of the contour line and with the edge viewing area
Main viewing area；
The special-shaped display screen includes：
It is distributed in the pixel cell of some repeated arrangements of the main viewing area and the edge viewing area；
The main viewing area is by first kind driving thin film transistor (TFT) driving；
The edge viewing area is by the driving thin film transistor (TFT) driving of the second class；
Under identical electricity environment, the driving current of the main viewing area is more than the driving electricity of the edge viewing area
Stream.
The special-shaped display screen and the display device of integrated special-shaped display screen that the application provides at least have the advantages that：
In the case of identical operating voltage is applied, the driving current that the second class driving thin film transistor (TFT) provides is less than
The driving current that the first kind driving thin film transistor (TFT) provides, so as to which the brightness of edge viewing area is turned down, and reduces sawtooth
Sense or granular sensation.
Brief description of the drawings
Fig. 1 is the localized micro structure for the special-shaped display screen that the embodiment of the present application provides.
Fig. 2 is the image element circuit structure figure for the pixel cell that the embodiment of the present application provides.
101 main viewing areas
102 edges viewing area
Embodiment
To make the purpose, technical scheme and advantage of the application clearer, below in conjunction with the application specific embodiment and
Technical scheme is clearly and completely described corresponding accompanying drawing.Obviously, described embodiment is only the application one
Section Example, rather than whole embodiments.Based on the embodiment in the application, those of ordinary skill in the art are not doing
Go out under the premise of creative work the every other embodiment obtained, belong to the scope of the application protection.
Fig. 1 is referred to, a kind of localized micro structure of the special-shaped display screen provided for the application.
Special-shaped display screen is the display screen that special shape is transformed on the basis of traditional display screen.Special-shaped display screen is different
The profile of rectangle, plane tabular in traditional display screen.The space structure of special-shaped display screen substantially intercepted from spheroid one
Part, the part either intercepted from cylinder or the part intercepted from cuboid.The display surface of special-shaped display screen
For corresponding spheroid or the three-dimensional space curved surface of cylinder, or the two dimensional surface of at least part of curved profile.Corresponding abnormity
The edge wheel profile of the display surface of display screen is space curve or plane curve.
Special-shaped display screen has contour line 103, to define the scope of effective display area.Effective display area can be used for presenting
One width picture or Dynamic Announce picture., can be with the dynamic of inductive operation person when effective display area sets touch sensing
Make, and respond.In a particular application, special-shaped display screen can be the Curved screen of TV, or the Curved screen of mobile phone.
Effective display area includes what is abutted adjacent to the edge viewing area 102 of the contour line 103 and with edge viewing area 102
Main viewing area 101.
Special-shaped display screen includes：
The pixel cell of some repeated arrangements is distributed in the main viewing area 101 and the edge viewing area 102；
The main viewing area 101 is by first kind driving thin film transistor (TFT) driving；
The edge viewing area 102 is by the driving thin film transistor (TFT) driving of the second class；
Under identical electricity environment, the driving current of the main viewing area is more than the driving electricity of the edge viewing area
Stream.
Pixel cell (Pixel, PX) is often simply referred to as pixel.Each pixel cell can have respective color value, can adopt
Three primary colors show that thus, a pixel cell can be made up of green sub-pixels, blue subpixels and red sub-pixel.
The different colours number that one pixel cell can express depends on bit per pixel (BPP, bit per pixel).
This number of colours can be obtained by taking 2 color depth power.For example, common value has：
8bpp：256 colors, it is also known as " 8 "；
16bpp：216=65,536 colors, referred to as high color, it is also known as " 16 "；
24bpp：224=16,777,216 colors, referred to as RGB, common notation are " 16,700,000 color ", are also known as " 24
Color "；
32bpp：224+28, 32 more typical colors of computer realm are not expression 232Kind color, but in 24 color bases
8 (2 are added on plinth8=256 grades) GTG, therefore the color sum of 32 and 24 are identicals, and 32 are also referred to as complete
It is color.
Each pixel is taken to be represented with 24 bits in computer realm, three kinds of primary colors --- red, green, blue --- respectively assign to 8
Bit.Peak 2 of the intensity of each primary colors according to 8 bits8It is divided into 256 values.
The drive signal of pixel cell includes the electrical parameter values such as color depth, color range, data voltage.Abnormity shows screen display
When showing picture, data corresponding to video decoding chip decoded picture, driving chip is then forwarded to.Driving chip is according to acquisition
Data-driven pixel cell is shown.
The pixel cell of edge viewing area 102 is the pixel cell for meeting condition as defined below：
The normal distance of the center of pixel cell and the contour line 103 of special-shaped display screen is no more than default first apart from threshold
Value.
Default first distance threshold can be set according to statistics, to determine whether a pixel cell shows positioned at edge
Show area 102.For example, according to statistical number it has been found that pixel cell for specific dimensions, 3mm is inwardly offset from contour line 103
When, main viewing area 101 can be reached, then can set the 3mm to preset the first distance threshold.Certainly, default first here
It is only a kind of citing that distance threshold, which takes 3mm, the span of specific default first distance threshold and the curvature of contour line 103 and
The size of pixel cell is relevant.
Driving thin film transistor (TFT) (Thin Film Transistor, TFT) can drive pixel cell to work.Drive film
The driving current that transistor provides meets formula：
Wherein, I be pixel driving current, μnFor electron mobility, CoxFor the grid active layer of pixel driver thin film transistor (TFT)
Between electric capacity, W be pixel driver thin film transistor (TFT) channel width, L be pixel driver thin film transistor (TFT) channel length, VGSFor picture
The gate source voltage of element driving thin film transistor (TFT), VthFor the threshold voltage of pixel driver thin film transistor (TFT).Therefrom it can be found that：Driving
Electric current and electron mobility, grid source layer capacitance, channel width positive correlation, it is negatively correlated with channel length.
In the specific embodiment that the application provides, first kind driving thin film transistor (TFT) drives the pixel of main viewing area 101
Unit, the pixel cell of the second class driving thin film transistor (TFT) driving edge viewing area 102.In specifically production preparation process,
It can manufacture and meet first kind driving thin film transistor (TFT) claimed below and the second class driving thin film transistor (TFT)：
Under identical electricity environment, the driving current that the second class driving thin film transistor (TFT) provides is less than first kind driving film
The driving current that transistor provides.Here identical electricity environment can be to provide identical voltage environment.Specifically, such as pin
To Fig. 2, identical voltage VDD and identical dataline signal parameters are given.
So, the brightness of edge viewing area 102 is turned down, and reduces sawtooth sense or granular sensation.
First kind driving thin film transistor (TFT) and the second class driving thin film transistor (TFT) can be manufactured in the following manner：
Pass through the means of etching so that it is brilliant that the channel width of the second class driving thin film transistor (TFT) is less than first kind driving film
The channel width of body pipe.The channel width of second class driving thin film transistor (TFT) and the raceway groove of first kind driving thin film transistor (TFT)
The ratio of width is in 0.1-0.9 scopes so that and edge viewing area has the recognizable luminance difference of naked eyes relative to main viewing area,
It is thus possible to play the effect for weakening sawtooth sense.The channel width of second class driving thin film transistor (TFT) is in 2.5um-4.5um models
Enclose.Because the channel width of the second class driving thin film transistor (TFT) is near existing process size, therefore, in existing Preparation equipment
On the basis of simply minutely adjusted and can be manufactured, without being changed on a large scale to Preparation equipment, from
And the cost of production can be reduced.
Pass through the means of etching so that it is brilliant that the channel length of the second class driving thin film transistor (TFT) is more than first kind driving film
The channel length of body pipe.The channel length of second class driving thin film transistor (TFT) and the raceway groove of first kind driving thin film transistor (TFT)
The ratio of length is in 1.1-10 scopes so that and edge viewing area has the recognizable luminance difference of naked eyes relative to main viewing area,
So as to reach the effect for weakening sawtooth sense.The channel length of the second class driving thin film transistor (TFT) is in 15um-50um models
Enclose, because the channel length of the second class driving thin film transistor (TFT) is near existing process size, therefore, in existing Preparation equipment
On the basis of simply minutely adjusted and can be manufactured, without being changed on a large scale to Preparation equipment, from
And the cost of production can be reduced.
Pass through the means of etching so that (the second class drives film to the channel width of the second class driving thin film transistor (TFT) with it
Transistor) channel length the second ratio, less than the first kind driving thin film transistor (TFT) channel width with its (first kind drive it is thin
Film transistor) channel length the second ratio.(the second class drives the channel width of the second class driving thin film transistor (TFT) with it
Thin film transistor (TFT)) channel length the second ratio, with the first kind driving thin film transistor (TFT) channel width and the driving it is thin
First ratio of the channel length of film transistor, two ratios seek the quotient of business in 0.1-0.9 scopes so that edge viewing area phase
There is the recognizable luminance difference of naked eyes for main viewing area, so as to reach the effect for weakening sawtooth sense.Increase light shield, lead to
The processing procedures such as overexposure, development, etching so that it is thin that the grid source layer capacitance of the second class driving thin film transistor (TFT) is less than first kind driving
The grid source layer capacitance of film transistor.
Increase the means of light shield so that it is thin that the grid source layer capacitance of the second class driving thin film transistor (TFT) is less than first kind driving
The grid source layer capacitance of film transistor, specifically, can be according to formula
Adjust facing area S, spacing d and/or the permittivity ε between the grid active layer of the second class driving thin film transistor (TFT)r, from
And change grid source layer capacitance.Here it is possible to it is at least one in above-mentioned parameter by changing, the second class is driven into thin film transistor (TFT)
Grid source layer capacitance be arranged to 0.1-0.9 times of grid source layer capacitance of first kind driving thin film transistor (TFT) so that edge shows
Show that area has the recognizable luminance difference of naked eyes relative to main viewing area, so as to reach the effect for weakening sawtooth sense.Specifically, the
Facing area can be in 50 square microns between 300 square microns between the grid active layer of one kind driving thin film transistor (TFT).The first kind
Spacing can be between 800 angstroms to 1500 angstroms between driving the grid active layer of thin film transistor (TFT).Can select dielectric constant 3 to 7 it
Between dielectric medium.The grid active layer facing area of second class driving thin film transistor (TFT) corresponding can set the first kind to drive film brilliant
0.1-0.9 times of the grid active layer facing area of body pipe.Or second class driving thin film transistor (TFT) grid active layer between spacing set
1.1-10 times of spacing between the grid active layer of first kind driving thin film transistor (TFT).Or second class driving thin film transistor (TFT) grid source
The dielectric constant of the dielectric medium of interlayer is the dielectric constant that the first kind drives the dielectric medium between the grid active layer of thin film transistor (TFT)
0.1-0.9 times.
The application also provide it is a kind of integrate above-mentioned special-shaped display screen display device, the special-shaped display screen have contour line with
Define effective display area, the effective display area include the neighbouring contour line edge viewing area and with the edge viewing area
Adjacent main viewing area, the pixel cell that the special-shaped display screen includes some repeated arrangements are distributed in the main viewing area and institute
Edge viewing area is stated, the main viewing area is driven by first kind driving thin film transistor (TFT), and the edge viewing area is thin by the second class
Film transistor drives.First kind driving thin film transistor (TFT) can be less than by adjusting the channel width of the second class thin film transistor (TFT)
Channel width, and/or the channel length of adjustment the second class driving thin film transistor (TFT) are more than the ditch that the first kind drives thin film transistor (TFT)
Road length, and/or the second ratio of the channel width and its channel length of adjustment two classes driving thin film transistor (TFT) are less than the first kind
Drive the channel width of thin film transistor (TFT) and the first ratio of its channel length, and/or adjustment the second class driving thin film transistor (TFT)
Grid source layer capacitance be less than the first kind driving thin film transistor (TFT) grid source layer capacitance so that in identical electricity environment
Under, the driving current of the main viewing area is more than the driving current of the edge viewing area, and then so that edge viewing area it is bright
Degree is turned down, and reduces sawtooth sense or the granular sensation of edge viewing area.It is understood that special-shaped display screen in the display device
Concrete structure it is identical with the concrete structure of the special-shaped display screen in above-described embodiment, will not be repeated here.
It is, of course, also possible to the impedance of the power supply cabling by adjusting image element circuit, realizes that the driving current of main viewing area is big
Driving current in the edge viewing area.The first power supply cabling in the image element circuit of main viewing area is connected with power supply.Edge
Second source cabling in the image element circuit of viewing area is connected with power supply.
Specifically, the formula of impedance of the power supply cabling of image element circuit：
Wherein, ρ is resistivity, and d is cabling film thickness, and l is track lengths, and w is trace width.Therefore, can be by changing
The impedance of the parameter change image element circuit power supply cabling become in formula, so as to change pixel driving current.
In a specific embodiment, other parameters can be kept constant, individually adjust the pixel of edge viewing area 102
The width w of the second source cabling of circuitx, it is less than the width of the first power supply cabling of the image element circuit of main viewing area 101
w0.Specifically, for the image element circuit of main viewing area, the width of the first power supply cabling is at 4.3 microns -5.7 microns.And for side
The image element circuit of edge viewing area, the width of second source cabling could be arranged to 1.8 microns -3.2 microns.Second source cabling
Width is 0.3-0.74 times of the first power supply trace width.Second source cabling can be not wide cabling.For example, second source
At least one section of arrowband in cabling, the width of the remainder outside arrowband can be suitable with the first power supply trace width, and narrow
The width of band can be then 1.8 microns -3.2 microns, be 0.3-0.74 times of the first power supply trace width, so, can be in master
It is finely adjusted on the basis of first power supply cabling of viewing area, reduces manufacturing cost.Further for example, second source trace width
Gradually increase, the narrower one end of trace width can be one end of connection power supply, or connection driving thin film transistor (TFT)
One end.Because second source trace width gradually increases, processing and manufacturing difficulty is reduced.
Therefore, it can be seen from formula, the power supply of the image element circuit of edge viewing area 102 walks line impedence RxIncrease, power supply are walked
Pressure drop increase on line, the voltage for inputting the image element circuit of pixel cell reduces, so as to reduce the driving current of pixel cell.
In another specific embodiment, other parameters can be kept constant, individually adjust the picture of edge viewing area 102
The cabling film thickness d of the second source cabling of plain circuitx, it is less than the first power supply of the image element circuit of main viewing area 101 and walk
The cabling film thickness d of line0.Specifically, for example, the first power supply cabling of main viewing area cabling film thickness be 4500-6500 angstroms,
Then the cabling film thickness of the second source cabling of edge viewing area is adjusted to 500-700 angstroms, and the observation on such small yardstick can
To see, main viewing area etches into the outermost layer Ti layers of Ti-Al-Ti layers, and corresponding edge viewing area etches into M3 Ti-Al-
The Ti layers of innermost layer in Ti layers.Wherein, the specific means for adjusting the cabling film thickness of image element circuit power supply cabling is increase light
Mask, cabling film can further be etched in photoetching by increasing photomask, so as to reduce the thickness of cabling film.
Specifically, the etching that Mask is used for arcuate segments circumference pattern can be increased newly, its figure is consistent with the figure on periphery, then through overexposure
Light, development, etching, etch rate is controlled, and then ensure residual film thickness.Conventional thickness is 5250 angstroms, after over etching, residual film thickness
For 86% or so of conventional thickness.The film thickness of second source cabling is 0.07-0.16 times of the first power supply cabling film thickness.The
Two power supply cablings can be not uniform thickness cabling.At least one section of arrowband in second source cabling.For example, in second source cabling extremely
Rare one section of arrowband, the film thickness of the remainder outside arrowband can be suitable with the first power supply cabling film thickness.And arrowband
Film thickness can be then 500-700 angstroms, be 0.3-0.74 times of the first power supply cabling film thickness.So, can be in main viewing area
The first power supply cabling on the basis of be finely adjusted, reduce manufacturing cost.Further for example, the film thickness of second source cabling by
Cumulative big, the narrower one end of cabling thickness can be one end of connection power supply, or the one of connection driving thin film transistor (TFT)
End.Because second source cabling film thickness gradually increases, processing and manufacturing difficulty is reduced.
Therefore, it can be seen from formula, the image element circuit power supply of pixel cell walks line impedence RxIncrease, the pressure on power supply cabling
Drop increase, the voltage for inputting image element circuit reduces, so as to reduce the driving current of pixel cell.
The application also provide it is a kind of integrate above-mentioned special-shaped display screen display device, the special-shaped display screen have contour line with
Define effective display area, the effective display area include the neighbouring contour line edge viewing area and with the edge viewing area
Adjacent main viewing area, the pixel cell that the special-shaped display screen includes some repeated arrangements are distributed in the main viewing area and institute
State edge viewing area, the first power supply cabling in the image element circuit of the main viewing area is connected with power supply, the edge viewing area
Image element circuit in second source cabling be connected with power supply.The first electricity can be less than by adjusting the width of second source cabling
The width of source cabling, and/or by adjusting cabling thickness of the cabling film thickness less than the first power supply cabling of second source cabling
Degree so that the impedance of second source cabling is more than the impedance of the first power supply cabling, and then causes under identical electricity environment, institute
The driving current for stating main viewing area is more than the driving current of the edge viewing area, and then so that the brightness quilt of edge viewing area
Turn down, reduce sawtooth sense or the granular sensation of edge viewing area.It is understood that in the display device special-shaped display screen tool
Body structure is identical with the concrete structure of the special-shaped display screen in above-described embodiment, will not be repeated here.
It is illustrated in figure 2 the 2T1C of pixel cell image element circuit.By the circuit diagram, pixel cell pixel is adjusted
It the electric capacity of the storage of circuit, can equally realize under identical electricity environment, realize the driving current of main viewing area
More than the driving current of the edge viewing area.Specifically, the first storage is connected with the image element circuit of main viewing area.
The second storage is connected with the image element circuit of edge viewing area.
It is understood that for the storage of the NT1C image element circuits such as 7T1C image element circuits, 8T1C image element circuits,
The electric capacity of the storage of pixel unit drive circuit is adjusted, can equally be realized under identical electricity environment, realizes master
The driving current of viewing area is more than the driving current of the edge viewing area.
According to the storage C of the image element circuit of pixel cellSElectric capacity：
Meanwhile electric current and the formula of capacitance relation：
Wherein, C is image element circuit storage CSElectric capacity, εrThe dielectric constant of medium between pole plate, S are upper and lower base
The facing area of plate, k are electrostatic force constant, and distances of the d between upper and lower base plate, I is the electricity for flowing through image element circuit storage
Stream,Represent current versus time differential.The basic definition of electric current is the quantity of electric charge flowed through in the unit interval, i.e.,It is and electric
Charge Q=CU in appearance, wherein C are the electric capacity of capacitor, and U is capacitor voltage at both ends.Q=CU is substituted intoIn, just
ObtainRepresent to flow through the relation that the electric current of capacitor changes with capacitor voltage at both ends in the unit interval.Therefore,
The electric capacity of the storage of the image element circuit of pixel cell can be changed by the parameter changed in formula, and then change pixel
The driving current of unit.
In a specific embodiment, keep other specification constant, individually reduce the pixel cell pair of edge viewing area 102
The facing area S of the upper and lower base plate of the storage for the image element circuit answered1, it is less than the image element circuit of main viewing area 101
The first storage upper and lower base plate facing area S0.Therefore, image element circuit corresponding to the pixel cell of edge viewing area 102
The electric capacity of the second storage reduce, the electric current for flowing through the second storage of the image element circuit of edge viewing area subtracts
It is small, so as to reduce the pixel driving current of edge viewing area.Specifically, the storage C of image element circuitSThe target of electric capacity
Value is 6pF, zone of reasonableness 4pF-8pF.In order to eliminate edge sawtooth sense, the second storage electricity of the image element circuit of edge viewing area
Container CSThe zone of reasonableness of the facing area of upper and lower base plate, the pixel intensity and the picture of main viewing area of edge viewing area can be passed through
Plain brightness ratio determines.In the application, the first storage C of the image element circuit of main viewing areaSUpper and lower base plate right opposite
Long-pending size is 180-240 square microns or so, in order to eliminate edge sawtooth sense, the second storage of edge viewing area image element circuit
Capacitor CSUpper and lower base plate facing area could be arranged to 108-144 square microns, and the brightness of edge viewing area pixel can be
The 60% of the brightness of main viewing area pixel.
In another specific embodiment, thus it is possible to vary the second storage C of the image element circuit of edge viewing areaS
The area of upper substrate, the area of its infrabasal plate can also be changed, so as to reach the purpose for reducing upper and lower base plate facing area.When
So, the area of upper substrate and the area of infrabasal plate can also be changed simultaneously.
In another embodiment that the application provides, it is preferred that change the second storage electricity of edge viewing area image element circuit
Container CSThe area of upper substrate.Reason is image element circuit storage CSInfrabasal plate connection electrode be drive TFT grid
Pole, it is preferential to keep area constant, and image element circuit storage CSInfrabasal plate to capacitive insulating layer and upper substrate film forming
Have an impact.The area of infrabasal plate can suitably reduce when being necessary.Edge viewing area image element circuit storage CS's
Facing area could be arranged to main viewing area image element circuit storage CS0.1-0.9 times of facing area.
In another specific embodiment, keep other specification constant, individually increase the second of edge viewing area 102 and deposit
Storing up electricity container CSUpper and lower base plate spacing d1, it is larger than the first storage C of the image element circuit of main viewing area 101SIt is upper
Infrabasal plate spacing d0.Specifically, the first storage C of the image element circuit of main viewing area 101 can be setSUpper and lower base plate
Spacing d0For 100-130 angstroms.The image element circuit of edge viewing area 102 can be set deposits the second storing up electricity container CSUpper and lower base plate
Spacing is 110-1170 angstroms, for 1.1-9 times of main viewing area 101.Therefore, the image element circuit of the pixel cell of edge viewing area 102
The electric capacity of the second storage reduce, the electric current for flowing through the second storage of edge viewing area image element circuit subtracts
It is small, so as to reduce edge viewing area pixel driving current.
In another specific embodiment, keep other specification constant, individually change the second of edge viewing area 102 and deposit
The dielectric medium of storing up electricity container, it is set to be less than the dielectric constant of the first storage of the image element circuit of main viewing area 101.Specifically
, for example, the second storage of edge viewing area 102 can select dielectric constant as 3 dielectric medium, main viewing area 101
The first storage can select dielectric constant for 7 dielectric medium.
In another specific embodiment, the second storage is electric including first sub-capacitor and with the first son
The sub-capacitor of capacitance identical second with the first storage of container concatenation.So, can be in main viewing area pixel
Carry out increasing by first sub-capacitor on circuit base, easily implement.Of course, it is possible to two sub- capacitor series are used,
As long as the overall capacitance of two sub-capacitors after concatenation is less than the capacitance of the first storage.
The application also provide it is a kind of integrate above-mentioned special-shaped display screen display device, the special-shaped display screen have contour line with
Define effective display area, the effective display area include the neighbouring contour line edge viewing area and with the edge viewing area
Adjacent main viewing area, the pixel cell that the special-shaped display screen includes some repeated arrangements are distributed in the main viewing area and institute
Edge viewing area is stated, the first storage, the picture of the edge viewing area are connected with the image element circuit of the main viewing area
The second storage is connected with plain circuit.Can be small by the facing area for the upper and lower base plate for adjusting the second storage
In the facing area of the first storage upper and lower base plate, and/or by adjust the second storage upper and lower base plate between
Spacing away from more than the first storage upper and lower base plate, and/or by adjusting the upper and lower base plate of the second storage
Between dielectric medium dielectric constant be less than the first storage upper and lower base plate between dielectric medium dielectric constant so that second deposits
The electric capacity of storing up electricity container is less than the electric capacity of the first storage, and then causes under identical electricity environment, the main display
The driving current in area is more than the driving current of the edge viewing area, and then so that the brightness of edge viewing area is turned down, and is reduced
The sawtooth sense of edge viewing area or granular sensation.It is understood that in the display device concrete structure of special-shaped display screen with
The concrete structure of special-shaped display screen in above-described embodiment is identical, will not be repeated here.The specific of the application implementation is described below
Application scenarios：
Special-shaped display screen, there is contour line 103, to define the scope of effective display area.According to default first distance of setting
The pixel cell that the distance of threshold value, the center of pixel cell and the contour line 103 is no more than default first distance threshold is side
Edge viewing area 102, opposite, the distance of the center of pixel cell and the contour line 103 exceedes default first distance threshold
Pixel cell is main viewing area 101.Special-shaped display screen includes being distributed in the main viewing area 101 and the edge viewing area 102
The pixel cells of some repeated arrangements, the driving main viewing area 101 the pixel cell first kind driving film it is brilliant
The second class driving thin film transistor (TFT) of body pipe and the pixel cell of the driving edge viewing area 102.
Fig. 2 show image element circuit.The driving current of image element circuit meets formula
Meanwhile the formula of impedance of the power supply cabling of image element circuit is：
Meanwhile the capacitance equation of the storage of image element circuit is：
It is thus possible to adjust each parameter in a manufacturing process to realize under identical drive signal, the driving of the second class is thin
The driving current that film transistor provides is less than the driving current that first kind driving thin film transistor (TFT) provides.
Specifically, by etching the second class the channel width of thin film transistor (TFT) can be driven thin less than first kind driving
The channel width of film transistor.
The channel length of thin film transistor (TFT) can also be driven to be more than the first kind by etching the second class drives film brilliant
The channel length of body pipe.
The channel width and its (the second class driving film crystalline substance of thin film transistor (TFT) can also be driven by etching the second class
Body pipe) channel length the second ratio, less than the first kind driving thin film transistor (TFT) channel width with its (first kind drive film
Transistor) channel length the first ratio.
The means of light shield or direct over etching can also be increased so that electricity between the grid active layer of the second class driving thin film transistor (TFT)
Hold the grid source layer capacitance for being less than first kind driving thin film transistor (TFT).
The width w of the second source cabling of the image element circuit of edge viewing area 102 can also be adjustedx, it is less than it main aobvious
Show the width w of image element circuit the first power supply cabling in area 1010。
The cabling film thickness d of the second source cabling of the image element circuit of edge viewing area 102 can also be adjustedx, make its small
In the cabling film thickness d of the first power supply cabling of the image element circuit of main viewing area 1010。
The facing area S of the upper and lower base plate of the second storage of edge viewing area 102 can also be adjusted1, make its small
In the facing area S of the first storage upper and lower base plate of the image element circuit of main viewing area 1010。
The upper and lower base plate spacing d of the second storage of edge viewing area 102 can also be adjusted1, it is larger than main aobvious
Show the upper and lower base plate spacing d of the first storage of the image element circuit in area 1010。
A kind of display device that the application provides, can be mobile phone, TV, wearable device, mobile unit, smart home
Equipment etc., it includes：The special-shaped display screen of above-mentioned any one embodiment；For the power supply for above-mentioned special-shaped display screen power supply
Module；Memory module for media information；Processing module, it is electrical with special-shaped display screen, power module and memory module
Connection, to control the electric energy of power module to supply, and is shown in special-shaped display screen by media information.
Memory module is used for media information.When display device works, the display picture of display screen is by memory module
The media information control of storage.
Processing module is used for processing information.The display screen of processing module and display device, power module and point memory module
It is electrically connected with.When display device works, the electric energy supply of processing module control power module, the electric energy of power module is supplied in
Display screen.After the different pixels unit of luminescent layer in display screen receives the process signal of processing module, according to processing module
Process signal light.The luminous order of process signal controllable pixels unit, fluorescent lifetime and brightness.
The display device that the application provides, under identical electricity environment, the driving current of the main viewing area is more than institute
The driving current of edge viewing area is stated, and then so that the brightness of edge viewing area is turned down, and reduces the sawtooth of edge viewing area
Sense or granular sensation.
Each technical characteristic of embodiment described above can be combined arbitrarily, to make description succinct, not to above-mentioned reality
Apply all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, the scope that this specification is recorded all is considered to be.
Embodiment described above only expresses the several embodiments of the present invention, and its description is more specific and detailed, but simultaneously
Can not therefore it be construed as limiting the scope of the patent.It should be pointed out that come for one of ordinary skill in the art
Say, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the protection of the present invention
Scope.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (10)
1. a kind of special-shaped display screen, it is characterised in that the special-shaped display screen has contour line to define the model of effective display area
Enclose；
The effective display area includes the edge viewing area of the neighbouring contour line and shown with the master of edge viewing area adjoining
Show area；
The special-shaped display screen includes：
The pixel cell of some repeated arrangements is distributed in the main viewing area and the edge viewing area；
The main viewing area is by first kind driving thin film transistor (TFT) driving；
The edge viewing area is by the driving thin film transistor (TFT) driving of the second class；
Under identical electricity environment, the driving current of the main viewing area is more than the driving current of the edge viewing area.
2. special-shaped display screen according to claim 1, it is characterised in that the pixel cell of the edge viewing area is
Meet the pixel cell of condition as defined below：
The normal distance of the center of the pixel cell and the contour line is no more than default first distance threshold.
3. special-shaped display screen according to claim 1, it is characterised in that the driving current and pixel driver film crystal
The grid source layer capacitance positive correlation of pipe；
The grid source layer capacitance of the second class driving thin film transistor (TFT) is less than the grid source of first kind driving thin film transistor (TFT)
Layer capacitance.
4. special-shaped display screen according to claim 1, it is characterised in that the grid source of the second class driving thin film transistor (TFT)
The ratio of the grid source layer capacitance of layer capacitance and first kind driving thin film transistor (TFT) is in 0.1-0.9 scopes.
5. special-shaped display screen according to claim 4, it is characterised in that the grid source of the second class driving thin film transistor (TFT)
The facing area of layer drives 0.1-0.9 times of the facing area of the grid active layer of thin film transistor (TFT) for the first kind.
6. special-shaped display screen according to claim 5, it is characterised in that the grid source of the first kind driving thin film transistor (TFT)
The facing area of layer is in 50 square microns between 300 square microns.
7. special-shaped display screen according to claim 4, it is characterised in that the grid source of the second class driving thin film transistor (TFT)
The spacing of interlayer is 1.1-10 times that the first kind drives the spacing between the grid active layer of thin film transistor (TFT).
8. special-shaped display screen according to claim 7, it is characterised in that the grid source of the first kind driving thin film transistor (TFT)
Interlayer spacing is between 800 angstroms to 1500 angstroms.
9. special-shaped display screen according to claim 4, it is characterised in that the grid source of the second class driving thin film transistor (TFT)
The dielectric constant of the dielectric medium of interlayer is the dielectric constant that the first kind drives the dielectric medium between the grid active layer of thin film transistor (TFT)
0.1-0.9 times.
10. a kind of display device of integrated special-shaped display screen, it is characterised in that the special-shaped display screen has contour line to define
Effective display area；
The master that the effective display area includes the edge viewing area of the neighbouring contour line and surrounded with the edge viewing area shows
Show area；
The special-shaped display screen includes：
It is distributed in the pixel cell of some repeated arrangements of the main viewing area and the edge viewing area；
The main viewing area is by first kind driving thin film transistor (TFT) driving；
The edge viewing area is by the driving thin film transistor (TFT) driving of the second class；
Under identical electricity environment, the driving current of the main viewing area is more than the driving current of the edge viewing area.
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Application publication date: 20180309 |