CN107782767A - A kind of gas sensor heating dish and processing method - Google Patents
A kind of gas sensor heating dish and processing method Download PDFInfo
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- CN107782767A CN107782767A CN201610738908.1A CN201610738908A CN107782767A CN 107782767 A CN107782767 A CN 107782767A CN 201610738908 A CN201610738908 A CN 201610738908A CN 107782767 A CN107782767 A CN 107782767A
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Abstract
The invention discloses a kind of processing method of gas sensor heating dish, it is included on Silicon Wafer and insulating barrier is set；Heating electrode and detecting electrode are set on the insulating layer, and both are separate；Silicon Wafer etches test chamber.This method will heat electrode and detecting electrode is all disposed within same dielectric layer, heats spaced independence between electrode and detecting electrode, is mutually not in contact with each other.Therefore extra insulating barrier need not be separately provided between heating electrode and detecting electrode to be separated, therefore reduce procedure of processing, and reduce the usage amount of insulating materials.The invention also discloses a kind of gas sensor heating dish, including Silicon Wafer, test chamber is set thereon；Insulating barrier and heating electrode and detecting electrode thereon, detecting electrode and heating electrode are separate.Electrode and detecting electrode are heated in the heating dish by same dielectric layer support, both are located at position different on insulating barrier, it is not necessary to which insulating barrier is set between detecting electrode and heating electrode.
Description
Technical field
The present invention relates to sensor processing technique field, further relates to a kind of gas sensor heating dish and processing side
Method.
Background technology
Mini type gas sensor processing cost is low, low in energy consumption, and small volume is easily integrated, and is widely used in recent years
In mobile and consumer level gas detection product.Based on SnO2WO3Deng metal oxide detection material mini type gas sensor by
It is one of gas detection scheme of main flow in its high sensitivity and selectivity to pernicious gases such as CO.
Traditional sensor heating dish grows or deposited SiO in processing, first in silicon wafer substrate2Or deposit by several times
SiO2And Si3N4；Then in same outgrowth or sputtering heating electrode material layer, and by heating electrode material layer pattern, processing
Go out the heating electrode of corresponding pattern；Then deposition insulating material, such as SiO on heating electrode2；Then form sediment on the insulating material
Product or sputtering detecting electrode material layer, it is similarly that detecting electrode is patterned, process the detection electricity of corresponding pattern
Pole.Using modes such as dry or wets from back-etching Silicon Wafer, make on Silicon Wafer the SiO of lamination successively2, Si3N4Layer, add
The structures such as thermode, insulation material layer, detecting electrode are in hanging, form hot plate.
As depicted in figs. 1 and 2, the shape and structure figure of heating electrode and detecting electrode is represented respectively；It is one to heat electrode
The wire of conducting, detecting electrode are two separate wires, are not connected between each other.
Traditional processing mode needs the lamination on Silicon Wafer multiple, it is necessary to control the quality of every layer film, difficulty of processing
It is larger, and the time relatively long efficiency processed is low, is unfavorable for mass producing.And the lamination of multilayer material can also increase
The usage amount of material, improve production cost.
The content of the invention
It is few the step of production process it is an object of the invention to provide a kind of gas sensor heating dish and processing method,
It is with short production cycle.Specific scheme is as follows：
A kind of processing method of gas sensor heating dish, including：
Insulating barrier is set on Silicon Wafer；
Heating electrode is set on the insulating barrier；Detecting electrode is set on the insulating barrier, the detecting electrode with
The heating electrode is separate；
The Silicon Wafer etches test chamber.
Alternatively, heating electrode is set to include on the insulating barrier：
Deposited on the insulating barrier or sputter the complete heating electrode material layer of monoblock, and by the heating electrode material layer
Graphical to be separated out heating Seed Layer and cushion, the heating Seed Layer is not connected to independently of each other with the cushion；It is described
Heating Seed Layer deposits or sputtered the heating electrode directly as the heating electrode or in the heating Seed Layer.
Alternatively, detecting electrode is set to include on the insulating barrier：
The cushion is divided into separate two parts, on two parts of the cushion independently deposit or
Sputter the detecting electrode.
Alternatively, in addition to：
Gas sensing layer is integrally coated or deposits on the insulating barrier, the heating electrode and the detecting electrode.
In addition, the present invention also provides a kind of gas sensor heating dish, including：
Silicon Wafer, test chamber is set on the Silicon Wafer；
The insulating barrier being arranged on the Silicon Wafer；
Heating electrode and the detecting electrode being arranged on the insulating barrier, the detecting electrode and the heating electrode are mutual
It is independent.
Alternatively, the heating electrode material layer on the insulating barrier is separated to form heating Seed Layer, the heating Seed Layer
Directly as the heating electrode or in the heating Seed Layer, the heating electrode is set；The heating electrode material layer
Other parts form cushion, the cushion includes separate two parts, and two parts of the cushion are independently set
Put the detecting electrode.
Alternatively, in addition to entirety is covered in the air-sensitive on the insulating barrier, the heating electrode and the detecting electrode
Layer.
Alternatively, electrode is S-shaped is distributed on the insulating barrier for the heating, and the both ends of the heating electrode are relative to be set
Put.
Alternatively, the interspersed both sides for being arranged in the heating electrode of the detecting electrode, the electrode that heats is by the inspection
The two parts for surveying electrode separate.
Alternatively, the material of the heating electrode is Ti, Pt or Au；The material of the detecting electrode is Pt or Au, described
Gas sensing layer is SnO2Or WO3。
The invention provides a kind of processing method of gas sensor heating dish, it is included on Silicon Wafer and insulating barrier is set；
Heating electrode is set on the insulating layer；Detecting electrode is set on the insulating layer, and detecting electrode and heating electrode are separate；Silicon wafer
Circle etches test chamber.This method will heat electrode and detecting electrode is all disposed within same dielectric layer, heats electrode and detection
Spaced independence, is mutually not in contact with each other between electrode.Therefore need not be separately provided in heating electrode and detecting electrode extra
Insulating barrier is separated, therefore reduces procedure of processing, and reduces the usage amount of insulating materials, is effectively controlled and is produced into
This.
Present invention also offers a kind of gas sensor heating dish, including Silicon Wafer, test chamber is set on Silicon Wafer；Set
In the insulating barrier on Silicon Wafer；Heating electrode and the detecting electrode being arranged on insulating barrier, detecting electrode and heating electrode are mutual
It is independent.Electrode and detecting electrode are heated in the heating dish by same dielectric layer support, both are separate, on insulating barrier
Different position, it is not necessary to insulating barrier is set between detecting electrode and heating electrode, therefore the use of material can be reduced, is had
Help reduce production cost.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is the required accompanying drawing used in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
Some embodiments of invention, for those of ordinary skill in the art, on the premise of not paying creative work, can be with
Other accompanying drawings are obtained according to these accompanying drawings.
Fig. 1 is the shape and structure figure for heating electrode in the prior art；
Fig. 2 is the shape and structure figure of detecting electrode in the prior art；
Fig. 3 is the flow chart of gas sensor heating dish processing method of the present invention；
Fig. 4 is a kind of specific flow chart of gas sensor heating dish processing method of the present invention；
Fig. 5 is the Facad structure figure of gas sensor heating dish provided by the invention；
Fig. 6 is the longitudinal profile structure diagram of gas sensor heating dish provided by the invention.
Wherein：
Silicon Wafer 1, insulating barrier 2, heating electrode material layer 3, heating electrode 31, cushion 32, detecting electrode 4, test chamber
5th, gas sensing layer 6.
Embodiment
The core of the present invention is to provide a kind of gas sensor heating dish and processing method, and process step is few, raw
The production cycle is short, reduces production cost.
In order that those skilled in the art more fully understands technical scheme, below in conjunction with accompanying drawing and specifically
Embodiment, explanation is described in detail to the gas sensor heating dish and processing method of the application.
As shown in figure 3, being the processing method flow chart of gas sensor heating dish provided by the invention, the flow chart represents
Main required step.Overall flow includes：Insulating barrier 2 is set on Silicon Wafer 1；Heating electrode is set on insulating barrier 2
31；Detecting electrode 4 is set on insulating barrier 2, and detecting electrode 4 and heating electrode 31 are separate；Silicon Wafer 1 etches test chamber
5.Insulating barrier 2 in first growth two-sided on substrate Silicon Wafer 1, deposit, heating electrode 31, heating are then set on insulating barrier 2
Electrode 31 can be arranged on insulating barrier 2 by the way of deposit or sputtering.Detecting electrode 4 is additionally provided with insulating barrier 2,
Detecting electrode 4 and heating electrode 31 are separate, between the two without annexation, in state of insulation.Due to both setting
Put on insulating barrier 2, and independently of each other, therefore the sequencing that detecting electrode 4 and heating electrode 31 are set has no influence, which
Individual step formerly can.But it should be noted that generally, detecting electrode 4 needs to set on the seed layer, Ye Jijian
It is more between survey electrode 4 and insulating barrier 2 to add one layer of Seed Layer, to play the effect of buffering.
The side of Silicon Wafer 1 is stacked sandwich construction, include insulating barrier 2, heating electrode 31, detecting electrode 4 and
The Seed Layer of detecting electrode 4, in order to realize the purpose of detection, also need to perform etching on Silicon Wafer 1 to process test chamber
5, so that insulating barrier 2 and the structure set thereon are in vacant state, the part in test chamber 5 is provided by insulating barrier 2
Support.Need to etch corresponding shape on insulating barrier 2 simultaneously, enable air to flow out from insulating barrier 2 by test chamber 5,
Between insulating barrier 2 and Silicon Wafer 1 connection support is realized by multiple tie points.It is being provided with cushion 32 and the phase of detecting electrode 4
To one side test chamber 5 is etched using the mode such as dry method DRIE or wet method KOH, THAH.
The processing method of gas sensor heating dish provided by the present invention, detecting electrode 4 and heating electrode 31 is mutual
It is independently positioned on insulating barrier 2, both provides support by insulating barrier 2, compared with traditional structure, saves in process of production
Remove detecting electrode 4 and heated the insulating barrier between electrode 31, reduce the use of material, and reduce the step of a deposit
Suddenly, it can effectively shorten the production cycle, reduce production cost.
On this basis further, heating electrode 31 is set in said process, on insulating barrier 2.This process is specifically
Including：One layer of heating electrode material layer 3 is covered by the way of deposit or sputtering on insulating barrier 2, heating electrode material layer 3 is
The complete structure of one monoblock, form within edge complete close-shaped.Then complete heating electrode material layer 3 is subjected to figure
Shapeization processing, is separated out required pattern, only retains the pattern part of needs, removes the remainder of heating electrode material layer 3
Material.After patterning process finishes, monoblock heating electrode material layer 3 is separated into heating Seed Layer and cushion 32, adds
Between heating seed layer and cushion 32 independently of each other, both do not have annexation, heat Seed Layer and cushion 32 is directly set
Put on insulating barrier 2, mutually insulated.Certainly, monoblock heating electrode material layer 3 is first set to do graphical separation again in said process
Processing is only used as a preferred embodiment of the present invention, also directly can cover the heating Seed Layer of given pattern in the overlying of insulating barrier 2,
These specific set-up modes are included within the design concept of the present invention.Heating Seed Layer can be directly as heating electrode
31, it can also deposit or sputter in addition in heating Seed Layer to form heating electrode 31, two ways can form heating electricity
Pole 31.
Further, the process of detecting electrode 4 is set to comprise the following steps on insulating barrier 2：Cushion 32 is divided into phase
Mutually independent two parts, independently deposit or sputter detecting electrode 4 on two parts of cushion 32.Using above-described embodiment
It is middle first to set monoblock heating electrode material layer 3 to do the graphical processing mode for separating processing again, it can further reduce processing
Step, it is not necessary to be separately provided Seed Layer；Heating electrode material layer 3 is divided into heating electrode 31 and cushion 32, by cushion 32
Separate two parts, two same mutually insulateds in part of cushion 32 are divided into again.Electrode material is being heated to monoblock
During 3 graphical treatment of the bed of material, while en-block construction being divided into three separate parts, a part is heating electrode 31,
Two other part is cushion 32, and relative position makes dispositions according to the pattern to be set.On two parts of cushion 32
Detecting electrode 4 is separately set, and detecting electrode 4 can be set by the way of deposit or sputtering.Face shared by detecting electrode 4
Product is smaller relative to cushion 32, and the edge of detecting electrode 4 does not expose cushion 32.
In any of the above-described technical scheme and its on the basis of being mutually combined, if the detection for gas, carried in the present invention
The processing method of the gas sensor heating dish of confession also includes：Integrally applied on insulating barrier 2, heating electrode 31 and detecting electrode 4
Cover or deposit gas sensing layer 6, gas sensing layer 6 has very high sensitiveness to specific gas.As shown in figure 4, passed for gas of the present invention
A kind of specific flow chart of sensor heating dish processing method, the flow chart represent specifically complete machining process.
Present invention also offers a kind of gas sensor heating dish, including：Silicon Wafer 1, test chamber 5 is set on Silicon Wafer 1；
The insulating barrier 2 being arranged on Silicon Wafer 1；The heating electrode 31 and detecting electrode 4 being arranged on insulating barrier 2, detecting electrode 4 is with adding
Thermode 31 is separate.As shown in Figure 5 and Figure 6, the Facad structure of gas sensor heating dish respectively provided by the invention
Figure and longitudinal profile structure diagram, the insulating barrier 2 in Fig. 6 are arranged to double-layer structure.
Substrate of the Silicon Wafer 1 as whole heating dish, test chamber 5 is offered on Silicon Wafer 1, it is detected for circulating
Gas.The direct covering of Silicon Wafer 1 sets insulating barrier 2, sets heating electrode 31 and detecting electrode 4, inspection respectively on insulating barrier 2
Survey electrode 4 and heating electrode 31 is separate, between the two mutually insulated.
Using the present invention gas sensor heating dish, total need not detecting electrode 4 with heating electrode 31 it
Between insulating barrier is set, reduce the use of material, simplify process, the efficiency of processing can be effectively improved.
Heating electrode 31 makees graphical treatment by the heating electrode material layer 3 being set directly on insulating barrier 2 and separates processing
Being formed, a part for heating electrode material layer 3 forms heating Seed Layer, heats Seed Layer directly as heating electrode 31, or
Heating electrode 31 is set in addition in heating Seed Layer, and both modes are all possible.Heat other portions beyond Seed Layer
It is allocated as cushion 32.Cushion 32 includes separate two parts, on cushion 32 on each independent part respectively
Detecting electrode 4 is provided independently from, buffering is played a part of to detecting electrode 4 by the cushion 32 of heating electrode material layer 3, it is not necessary to
It is individually for detecting electrode 4 and cushion is set, can further simplifies process.
If being used for detection gas, gas sensor heating dish of the invention also includes being covered in insulating barrier 2, heating electrode 31
With the gas sensing layer 6 on detecting electrode 4.Insulating barrier 2, heating electrode 31 and detecting electrode 4 are covered parcel by gas sensing layer 6 simultaneously.Gas
Photosensitive layer 6 has very high sensitiveness to specific gas, is set by the way of coating or deposit.
Specifically, electrode 31 is S-shaped is distributed on insulating barrier 2 for heating, and the both ends of heating electrode 31 are oppositely arranged.Such as Fig. 5
Shown in, heating electrode 31 is regularly formed by multiple right angle S-shapeds are end to end, is equably covered on insulating barrier 2, is made insulation
Each part on layer 2 can effectively be heated.Certainly, the distribution form of S types is a kind of specific setting form, as long as uniformly
Ground is arranged on insulating barrier 2 and is intended to be included within protection scope of the present invention.
The interspersed both sides for being arranged in heating electrode 31 of detecting electrode 4, heating electrode 31 divide two parts of detecting electrode 4
Every.Give a kind of heating electrode 31 S-type arrangement due to above-mentioned, the gap of S type structures can be used for arrangement detection electricity
Pole 4, detecting electrode are equably interspersed in the both sides of heating electrode 31, by heating electrode 31 by two part phases of detecting electrode 4
Mutually separate, each part of detecting electrode 4 is positioned at the side of heating electrode 31.Above-mentioned form is also only specifically set as one kind
Form is put, can also make being correspondingly improved as needed.
The present invention provides the specific material of heating electrode 31, detecting electrode 4 and gas sensing layer 6.Heating electrode 31 material be
Ti, Pt or Au, Pt or Au material layers can also be set in addition on Ti materials by Ti materials separately as heating electrode 31
As heating electrode 31, by Seed Layers of the Ti as Pt or Au；Or directly Pt or Au are arranged on the substrate of Silicon Wafer 1, Pt
Small with Au resistance, hot conditions stability inferior is good.The material of detecting electrode 4 is that Pt or Au, Pt or Au are arranged on Ti, by Ti
Seed Layer as Pt or Au；Gas sensing layer 6 is SnO2Or WO3.Select to be preferred scheme above-mentioned material, using with its property
Similar other materials is also possible.
The metal oxide of the Pt or Au materials of detecting electrode 4 and gas sensing layer 6 formed Ohmic contact (contact surface resistivity compared with
It is low), and it is easy to process.Heat electrode 31 and the SnO of gas sensing layer 6 is much smaller than using the materials such as Ti, Pt or Au, its resistivity2Material
Material, heats electrode 31 and the Schottky barrier of gas sensing layer 6 is higher, is Schottky contacts, heated current can from Ti conductor structures by,
Substantially SnO will not be passed through2Flow detection electrode 4, the test accuracy of detecting electrode 4 is not interfered with.
In use, heating electrode 31 produces Joule heat after being powered, a portion is dissipated by modes such as air transmitteds,
Another part is dissipated as infrared ray.If heating power is more than heat radiation power, temperature can continue to raise, increase and the external world
The temperature difference, heat radiation power increase also with the increase of the temperature difference, keep stable after heating power is equal with heat radiation power.Example
Such as：Select suitable power by the temperature stabilization of hot plate at 400 DEG C, now SnO2There is preferable sensitiveness to CO gases.When
When CO concentration changes, SnO2Resistivity change therewith, the resistance variations of monitor and detection electrode can characterize CO concentration.
The foregoing description of the disclosed embodiments, professional and technical personnel in the field are enable to realize or using the present invention.
A variety of modifications to these embodiments will be apparent for those skilled in the art, as defined herein
General Principle, it can realize in other embodiments without departing from the spirit or scope of the present invention.Therefore, this hair
It is bright to be not intended to be limited to the embodiments shown herein, and be to fit to and principles disclosed herein and features of novelty phase
Consistent most wide scope.
Claims (10)
- A kind of 1. processing method of gas sensor heating dish, it is characterised in that including：Insulating barrier (2) is set on Silicon Wafer (1)；Heating electrode (31) is set on the insulating barrier (2)；Detecting electrode (4), the inspection are set on the insulating barrier (2) Survey electrode (4) and the heating electrode (31) is separate；The Silicon Wafer (1) etches test chamber (5).
- 2. the processing method of gas sensor heating dish according to claim 1, it is characterised in that the insulating barrier (2) It is upper to set heating electrode (31) to include：Deposited on the insulating barrier (2) or sputter the complete heating electrode material layer (3) of monoblock, and by the heating electrode material Graphical be separated out of layer (3) heats Seed Layer and cushion (32), and the heating Seed Layer is mutually only with the cushion (32) It is vertical to be not connected to；The heating Seed Layer is deposited or splashed directly as the heating electrode (31) or in the heating Seed Layer Penetrate the heating electrode (31).
- 3. the processing method of gas sensor heating dish according to claim 2, it is characterised in that the insulating barrier (2) Upper setting detecting electrode (4) includes：The cushion (32) is divided into separate two parts, is independently formed sediment on two parts of the cushion (32) Product sputters the detecting electrode (4).
- 4. the processing method of the gas sensor heating dish according to any one of claims 1 to 3, it is characterised in that also wrap Include：Gas sensing layer is integrally coated or deposits on the insulating barrier (2), the heating electrode (31) and the detecting electrode (4) (6)。
- A kind of 5. gas sensor heating dish, it is characterised in that including：Silicon Wafer (1), test chamber (5) is set on the Silicon Wafer (1)；The insulating barrier (2) being arranged on the Silicon Wafer (1)；The heating electrode (31) and detecting electrode (4) being arranged on the insulating barrier (2), the detecting electrode (4) add with described Thermode (31) is separate.
- 6. gas sensor heating dish according to claim 5, it is characterised in that the heating electricity on the insulating barrier (2) Pole material layer (3) is separated to form heating Seed Layer, and the heating Seed Layer is directly as the heating electrode (31) or in institute State and the heating electrode (31) is set in heating Seed Layer；The other parts of the heating electrode material layer (3) form cushion (32), the cushion (32) includes separate two parts, and two parts of the cushion (32) are independently arranged the inspection Survey electrode (4).
- 7. the gas sensor heating dish according to claim 5 or 6, it is characterised in that also include described in overall be covered in Gas sensing layer (6) on insulating barrier (2), the heating electrode (31) and the detecting electrode (4).
- 8. gas sensor heating dish according to claim 7, it is characterised in that S-shaped point of the heating electrode (31) On the insulating barrier (2), the both ends of the heating electrode (31) are oppositely arranged cloth.
- 9. gas sensor heating dish according to claim 8, it is characterised in that the interspersed arrangement of the detecting electrode (4) In the both sides of the heating electrode (31), the heating electrode (31) separates two parts of the detecting electrode (4).
- 10. gas sensor heating dish according to claim 7, it is characterised in that the material of the heating electrode (31) For Ti, Pt or Au；The material of the detecting electrode (4) is Pt or Au, and the gas sensing layer (6) is SnO2Or WO3。
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110579516A (en) * | 2019-09-02 | 2019-12-17 | 青岛歌尔智能传感器有限公司 | nitrogen dioxide gas detection device, manufacturing method thereof and electronic product |
| CN110806432A (en) * | 2019-11-19 | 2020-02-18 | 清华大学 | Micro-hotplate and method for producing a micro-hotplate |
| WO2020253454A1 (en) * | 2019-06-20 | 2020-12-24 | 南京云创大数据科技股份有限公司 | Combustible gas sensor based on wo3 nano-film |
Citations (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4580439A (en) * | 1983-02-07 | 1986-04-08 | Ricoh Seiki Co., Ltd. | Low power gas detector |
| CN1041453A (en) * | 1989-07-29 | 1990-04-18 | 吉林大学 | Ethanol, nitrogen dioxide double sensitive film air sensor for both gases |
| EP0498292A2 (en) * | 1991-01-30 | 1992-08-12 | Canon Information Systems Research Australia Pty Ltd. | Integrally formed bubblejet print device |
| EP0592662A4 (en) * | 1989-03-16 | 1992-08-18 | Dainippon Printing Co Ltd | Electrostatic data recording medium and electrostatic data recording/reproducing method. |
| US5324981A (en) * | 1988-07-01 | 1994-06-28 | Mitsubishi Denki Kabushiki Kaisha | Field effect transistor device with contact in groove |
| EP0737582A2 (en) * | 1995-04-14 | 1996-10-16 | Canon Kabushiki Kaisha | Method for producing liquid ejecting head and liquid ejecting head obtained by the same method |
| EP0856825A1 (en) * | 1997-01-31 | 1998-08-05 | STMicroelectronics S.r.l. | Process for manufacturing integrated semiconductor devices comprising a chemoresistive gas microsensor |
| KR20000063863A (en) * | 2000-08-07 | 2000-11-06 | 이용성 | semiconductor type micro gas sensor structure and their fabrication method |
| CN1379731A (en) * | 1999-10-19 | 2002-11-13 | 世主安吉尼尔林株式会社 | Gas sensor and fabrication method thereof |
| EP1261427A2 (en) * | 2000-03-02 | 2002-12-04 | Microchips, Inc. | Microfabricated devices and methods for storage and selective exposure of chemicals |
| US20030047450A1 (en) * | 2001-09-12 | 2003-03-13 | Yang Hae Sik | Microelectrode, microelectrode array and method for manufacturing the microelectrode |
| EP1417151A1 (en) * | 2001-07-31 | 2004-05-12 | Ncsr "Demokritos" | Method for the fabrication of suspended porous silicon microstructures and application in gas sensors |
| CN1684285A (en) * | 2004-04-16 | 2005-10-19 | 中国科学院电子学研究所 | Ministructure gas sensor array chip and its preparing method |
| US20060048572A1 (en) * | 2004-09-08 | 2006-03-09 | Nippon Soken, Inc. | Physical quantity sensor and method for manufacturing the same |
| EP1696229A1 (en) * | 2005-02-24 | 2006-08-30 | Ngk Spark Plug Co., Ltd | Oxidizing gas sensor and production method thereof |
| CN1888123A (en) * | 2006-07-25 | 2007-01-03 | 天津大学 | Magnetically controlled opposite target sputtering process of preparing gas-sensitive WO3 film sensor |
| US20070273394A1 (en) * | 2003-06-06 | 2007-11-29 | M.B.T.L. Limited | Environmental sensor |
| US20080045879A1 (en) * | 2004-05-28 | 2008-02-21 | Georgia Tech Research Corporation | Methods and Devices for Thermal Treatment |
| US20080134753A1 (en) * | 2006-12-07 | 2008-06-12 | Electronics And Telecommunications Research Institute | Micro gas sensor and method for manufacturing the same |
| US20100060465A1 (en) * | 2007-07-17 | 2010-03-11 | Kwj Engineering, Inc. | Apparatus and Method for Microfabricated Multi-Dimensional Sensors and Sensing Systems |
| CN201466017U (en) * | 2009-07-21 | 2010-05-12 | 深迪半导体(上海)有限公司 | Planar carrier cavity hermetic encapsulating structure of ultraminiature microelectronic circuit |
| CN102070118A (en) * | 2010-10-26 | 2011-05-25 | 南京工业大学 | Micro-heating plate for metal oxide semiconductor nano-film gas sensor |
| CN102243195A (en) * | 2011-04-13 | 2011-11-16 | 刘震国 | A resistance-type nitrogen dioxide gas sensor, and an apparatus manufactured with the sensor |
| US20120068136A1 (en) * | 2010-09-17 | 2012-03-22 | Samsung Electronics Co., Ltd. | Phase Change Memory Device, Storage System Having the Same and Fabricating Method Thereof |
| US20120073970A1 (en) * | 2010-09-29 | 2012-03-29 | National Taipei University Of Technology | Amperometric Oxygen Sensor |
| CN102411018A (en) * | 2010-09-24 | 2012-04-11 | 比亚迪股份有限公司 | Chip oxygen sensor |
| US20120273135A1 (en) * | 2008-03-05 | 2012-11-01 | Tokyo Electron Limited | Electrode unit, substrate processing apparatus, and temperature control method for electrode unit |
| CN102778479A (en) * | 2011-05-09 | 2012-11-14 | 中国科学院微电子研究所 | Integratable amorphous metal oxide semiconductor gas sensor |
| EP2533037A1 (en) * | 2011-06-08 | 2012-12-12 | Alpha M.O.S. | Chemoresistor type gas sensor having a multi-storey architecture |
| CN103543183A (en) * | 2013-10-16 | 2014-01-29 | 华东师范大学 | High-sensitivity gas sensor based on microchannel plate three-dimensional structure and production method of high-density gas sensor |
| CN203490153U (en) * | 2013-08-05 | 2014-03-19 | 深迪半导体(上海)有限公司 | MEMS (Microelectro Mechanical System) sensor for measuring concentration of suspension particles in air based on structural resonance |
| CN103760199A (en) * | 2013-12-26 | 2014-04-30 | 南京知阔电子技术有限公司 | Nitric oxide gas sensitive material manufacturing method, sensor, monitoring device and control method |
| CN104458828A (en) * | 2014-12-22 | 2015-03-25 | 中国科学院重庆绿色智能技术研究院 | Acetone gas sensory semiconductor sensor |
| CN204924863U (en) * | 2015-06-30 | 2015-12-30 | 中国第一汽车股份有限公司 | Combined sensor |
| US20160146752A1 (en) * | 2014-11-21 | 2016-05-26 | Robert Bosch Gmbh | Device for Detecting at least One Gaseous Analyte and Method for the Production Thereof |
| CN107192744A (en) * | 2017-04-01 | 2017-09-22 | 上海申矽凌微电子科技有限公司 | The manufacture method of gas sensing resistance and the gas sensor manufactured using this method |
-
2016
- 2016-08-26 CN CN201610738908.1A patent/CN107782767B/en active Active
Patent Citations (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4580439A (en) * | 1983-02-07 | 1986-04-08 | Ricoh Seiki Co., Ltd. | Low power gas detector |
| US5324981A (en) * | 1988-07-01 | 1994-06-28 | Mitsubishi Denki Kabushiki Kaisha | Field effect transistor device with contact in groove |
| EP0592662A4 (en) * | 1989-03-16 | 1992-08-18 | Dainippon Printing Co Ltd | Electrostatic data recording medium and electrostatic data recording/reproducing method. |
| CN1041453A (en) * | 1989-07-29 | 1990-04-18 | 吉林大学 | Ethanol, nitrogen dioxide double sensitive film air sensor for both gases |
| EP0498292A2 (en) * | 1991-01-30 | 1992-08-12 | Canon Information Systems Research Australia Pty Ltd. | Integrally formed bubblejet print device |
| EP0737582A2 (en) * | 1995-04-14 | 1996-10-16 | Canon Kabushiki Kaisha | Method for producing liquid ejecting head and liquid ejecting head obtained by the same method |
| EP0856825A1 (en) * | 1997-01-31 | 1998-08-05 | STMicroelectronics S.r.l. | Process for manufacturing integrated semiconductor devices comprising a chemoresistive gas microsensor |
| CN1379731A (en) * | 1999-10-19 | 2002-11-13 | 世主安吉尼尔林株式会社 | Gas sensor and fabrication method thereof |
| EP1261427A2 (en) * | 2000-03-02 | 2002-12-04 | Microchips, Inc. | Microfabricated devices and methods for storage and selective exposure of chemicals |
| KR20000063863A (en) * | 2000-08-07 | 2000-11-06 | 이용성 | semiconductor type micro gas sensor structure and their fabrication method |
| EP1417151A1 (en) * | 2001-07-31 | 2004-05-12 | Ncsr "Demokritos" | Method for the fabrication of suspended porous silicon microstructures and application in gas sensors |
| US20030047450A1 (en) * | 2001-09-12 | 2003-03-13 | Yang Hae Sik | Microelectrode, microelectrode array and method for manufacturing the microelectrode |
| US20070273394A1 (en) * | 2003-06-06 | 2007-11-29 | M.B.T.L. Limited | Environmental sensor |
| CN1684285A (en) * | 2004-04-16 | 2005-10-19 | 中国科学院电子学研究所 | Ministructure gas sensor array chip and its preparing method |
| US20080045879A1 (en) * | 2004-05-28 | 2008-02-21 | Georgia Tech Research Corporation | Methods and Devices for Thermal Treatment |
| US20060048572A1 (en) * | 2004-09-08 | 2006-03-09 | Nippon Soken, Inc. | Physical quantity sensor and method for manufacturing the same |
| EP1696229A1 (en) * | 2005-02-24 | 2006-08-30 | Ngk Spark Plug Co., Ltd | Oxidizing gas sensor and production method thereof |
| CN1888123A (en) * | 2006-07-25 | 2007-01-03 | 天津大学 | Magnetically controlled opposite target sputtering process of preparing gas-sensitive WO3 film sensor |
| US20080134753A1 (en) * | 2006-12-07 | 2008-06-12 | Electronics And Telecommunications Research Institute | Micro gas sensor and method for manufacturing the same |
| US20100060465A1 (en) * | 2007-07-17 | 2010-03-11 | Kwj Engineering, Inc. | Apparatus and Method for Microfabricated Multi-Dimensional Sensors and Sensing Systems |
| US20120273135A1 (en) * | 2008-03-05 | 2012-11-01 | Tokyo Electron Limited | Electrode unit, substrate processing apparatus, and temperature control method for electrode unit |
| CN201466017U (en) * | 2009-07-21 | 2010-05-12 | 深迪半导体(上海)有限公司 | Planar carrier cavity hermetic encapsulating structure of ultraminiature microelectronic circuit |
| US20120068136A1 (en) * | 2010-09-17 | 2012-03-22 | Samsung Electronics Co., Ltd. | Phase Change Memory Device, Storage System Having the Same and Fabricating Method Thereof |
| CN102411018A (en) * | 2010-09-24 | 2012-04-11 | 比亚迪股份有限公司 | Chip oxygen sensor |
| US20120073970A1 (en) * | 2010-09-29 | 2012-03-29 | National Taipei University Of Technology | Amperometric Oxygen Sensor |
| CN102070118A (en) * | 2010-10-26 | 2011-05-25 | 南京工业大学 | Micro-heating plate for metal oxide semiconductor nano-film gas sensor |
| CN102243195A (en) * | 2011-04-13 | 2011-11-16 | 刘震国 | A resistance-type nitrogen dioxide gas sensor, and an apparatus manufactured with the sensor |
| CN102778479A (en) * | 2011-05-09 | 2012-11-14 | 中国科学院微电子研究所 | Integratable amorphous metal oxide semiconductor gas sensor |
| EP2533037A1 (en) * | 2011-06-08 | 2012-12-12 | Alpha M.O.S. | Chemoresistor type gas sensor having a multi-storey architecture |
| CN203490153U (en) * | 2013-08-05 | 2014-03-19 | 深迪半导体(上海)有限公司 | MEMS (Microelectro Mechanical System) sensor for measuring concentration of suspension particles in air based on structural resonance |
| CN103543183A (en) * | 2013-10-16 | 2014-01-29 | 华东师范大学 | High-sensitivity gas sensor based on microchannel plate three-dimensional structure and production method of high-density gas sensor |
| CN103760199A (en) * | 2013-12-26 | 2014-04-30 | 南京知阔电子技术有限公司 | Nitric oxide gas sensitive material manufacturing method, sensor, monitoring device and control method |
| US20160146752A1 (en) * | 2014-11-21 | 2016-05-26 | Robert Bosch Gmbh | Device for Detecting at least One Gaseous Analyte and Method for the Production Thereof |
| CN104458828A (en) * | 2014-12-22 | 2015-03-25 | 中国科学院重庆绿色智能技术研究院 | Acetone gas sensory semiconductor sensor |
| CN204924863U (en) * | 2015-06-30 | 2015-12-30 | 中国第一汽车股份有限公司 | Combined sensor |
| CN107192744A (en) * | 2017-04-01 | 2017-09-22 | 上海申矽凌微电子科技有限公司 | The manufacture method of gas sensing resistance and the gas sensor manufactured using this method |
Non-Patent Citations (4)
| Title |
|---|
| LEI XU.ET: "Micro/Nano Gas Sensors: A New Strategy Towards In-Situ Wafer-Level Fabrication of High-Performance Gas Sensing Chips", 《SCIENTIFIC REPORTS》 * |
| VINEET BANSAL.ET: "3-D Design, Electro-Thermal Simulation and Geometrical Optimization of spiral Platinum Micro-heaters for Low Power Gas sensing applications using COMSOL", 《COMSOL CONFERENCE》 * |
| 张晓波等: "微气体传感器结构设计和优化", 《传感器与微系统》 * |
| 罗毅等: "用于探空仪的加热式湿度传感器及测量电路", 《光学精密工程》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020253454A1 (en) * | 2019-06-20 | 2020-12-24 | 南京云创大数据科技股份有限公司 | Combustible gas sensor based on wo3 nano-film |
| CN110579516A (en) * | 2019-09-02 | 2019-12-17 | 青岛歌尔智能传感器有限公司 | nitrogen dioxide gas detection device, manufacturing method thereof and electronic product |
| CN110806432A (en) * | 2019-11-19 | 2020-02-18 | 清华大学 | Micro-hotplate and method for producing a micro-hotplate |
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