CN107768532A - A kind of luminescence unit and preparation method thereof - Google Patents
A kind of luminescence unit and preparation method thereof Download PDFInfo
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- CN107768532A CN107768532A CN201610678734.4A CN201610678734A CN107768532A CN 107768532 A CN107768532 A CN 107768532A CN 201610678734 A CN201610678734 A CN 201610678734A CN 107768532 A CN107768532 A CN 107768532A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Abstract
The present invention relates to the design and manufacture field of OLED display screen, a kind of more particularly to luminescence unit and preparation method thereof, micro-cavity structure includes negative electrode, anode and the luminescent layer between negative electrode and anode in the luminescence unit, and the light of luminescent layer transmitting projects luminescence unit after micro-cavity structure resonates；Wherein, the light is through reflecting to form standing wave in the micro-cavity structure, and the anti-node location of the standing wave is overlapping with the luminescent layer.The present invention lifts device efficiency by the way that luminescent layer position to be fixed on to the method for resonance anti-nodes, further promotes the industrialization of OLED industries；Or the use of organic material is reduced by the method for device architecture optimization, so as to reduce OLED production costs, support is provided for OLED further industrialization.
Description
Technical field
The present invention relates to the design and manufacture field of OLED display screen, more particularly to a kind of luminescence unit and preparation method thereof.
Background technology
Recent years, OLED（Organic Light Emitting Diode, Organic Light Emitting Diode）Development obtain
Scientific research circle and the extensive concern of industrial quarters, OLED display screen have stepped into the life of people, and industry rapid development is shown in OLED
While, how further to improve OLED efficiency is also the topic that scientific research circle is paid close attention to jointly with industrial quarters.In general, it is
Lifting device display effect, at present OLED display screen typically use top emitting micro chamber device structure, can so reduce TFT
（Thin Film Transistor, thin film transistor (TFT)）The influence to be lighted to OLED, but how further to lift micro chamber device
Efficiency it is still critically important.
With the universalness of electronic product, display panel enters the every aspect of life, and OLED display panel is as next
For display panel, it has a low-power consumption, high-contrast, high reaction rate and Acclimation temperature the scope many advantages such as extensively.But
Oled panel is such as on the high side in itself there is also some problems, it is on the high side the main reason for come from the height of organic material
The complication of price and technique.
The content of the invention
In view of above-mentioned technical problem, the present invention is intended to provide a kind of micro chamber device structure, by the way that luminescent layer position is fixed
Device efficiency is lifted in the method for resonance anti-nodes, so also can further promote the industrialization of OLED industries；Or pass through
The method of device architecture optimization reduces the use of organic material, is OLED further production so as to reducing OLED production costs
Industryization provides support.
The present invention solve above-mentioned technical problem main technical schemes be：
A kind of luminescence unit, it is characterised in that including micro-cavity structure, and the micro-cavity structure includes negative electrode, anode and positioned at institute
The luminescent layer between negative electrode and the anode is stated, and the light of luminescent layer transmitting projects institute after micro-cavity structure resonance
State luminescence unit；
Wherein, the light in the micro-cavity structure through reflecting to form standing wave, and the anti-node location of the standing wave and the hair
Photosphere is overlapping.
Preferably, in above-mentioned luminescence unit, the anti-node location is the resonance anti-nodes position of the micro-cavity structure.
Preferably, in above-mentioned luminescence unit, in the micro-cavity structure, in addition to：
Hole injection layer, it is covered on the anode；
Hole transmission layer, be covered on the hole injection layer, and the luminescent layer covering positioned at the hole transmission layer it
On；And
Electron transfer layer, it is covered on the luminescent layer, and negative electrode covering is on the electron transfer layer.
Preferably, in above-mentioned luminescence unit, in the micro-cavity structure, in addition to：
The long adjustment layer of chamber, between the hole injection layer and the hole transmission layer, to adjust the micro-cavity structure
Total chamber length.
Preferably, in above-mentioned luminescence unit, the anode is total reflection anode, and the negative electrode is semitransparent cathode.
Preferably, above-mentioned luminescence unit also includes：
Light-extraction layer, it is covered in the top of the negative electrode.
Based on above-mentioned luminescence unit, the present invention also provides a kind of preparation method of luminescence unit, it is characterised in that bag
Include：
One anode is provided, is prepared on the anode and forms organic layer, and the organic layer includes being covered in the sun successively
Hole injection layer, hole transmission layer, luminescent layer, electron transfer layer on pole；
Prepare negative electrode to be covered on the electron transfer layer, to form micro-cavity structure in the luminescence unit；And
The thickness of the organic layer is adjusted, so that the luminescent layer is located at the resonance anti-nodes position of the micro-cavity structure；
Wherein, the resonance anti-nodes position is stayed for what the light that the luminescent layer projects reflected to form in the micro-cavity structure
The anti-node location of ripple.
Preferably, in above-mentioned preparation method, the method for the thickness of the adjustment organic layer includes：The sky is thinned
Cave transport layer and/or thicken the electron transfer layer and/or be thinned the luminescent layer.
Preferably, above-mentioned preparation method also includes：
The long adjustment layer of chamber is prepared between the hole injection layer and the hole transmission layer, for adjusting the microcavity knot
Total chamber length of structure；And
The top that light-extraction layer is covered in the negative electrode is prepared, for strengthening the illumination effect of the luminescent layer.
Based on above-mentioned luminescence unit, the present invention also provides a kind of preparation method of luminescence unit, it is characterised in that bag
Include：
One anode is provided, is prepared on the anode and forms organic layer, and the organic layer includes being covered in the sun successively
Hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer on pole；
Prepare negative electrode to be covered on the electron injecting layer, to form micro-cavity structure in the luminescence unit；And
Thicken the hole transmission layer and/or the electron transfer layer is thinned, so that the luminescent layer is close to the negative electrode, and subtract
The long thickness of total chamber of the thin micro-cavity structure, save the cost of the micro-cavity structure.
Preferably, in above-mentioned preparation method, the luminescence unit is blue light top emitting device, and the electron transfer layer
Thickness be 200 ~ 1000 angstroms, the thickness of the hole transmission layer is 200 ~ 400 angstroms；Or
The luminescence unit is green glow top emitting device, and the thickness of the electron transfer layer is 200 ~ 1500 angstroms, the hole
The thickness of transport layer is 200 ~ 400 angstroms；Or
The luminescence unit is feux rouges top emitting device, and the thickness of the electron transfer layer is 200 ~ 1800 angstroms, the hole
The thickness of transport layer is 200 ~ 400 angstroms.
Above-mentioned technical proposal has the following advantages that or beneficial effect：Position of the invention by adjusting luminescent layer, will be luminous
Layer position is fixed on the methods of resonance anti-nodes to lift device efficiency, so also can further promote the industry of OLED industries
Change；Or the use of organic layer material is reduced by the method for device architecture optimization, so as to reduce OLED micro chamber device
Production cost, support is provided for OLED further industrialization.
Brief description of the drawings
With reference to appended accompanying drawing, to be described more fully embodiments of the invention.However, appended accompanying drawing be merely to illustrate and
Illustrate, and be not meant to limit the scope of the invention.
Fig. 1 is the structure chart of the luminescence unit in embodiment one；
Fig. 2 is the resonance antinode position view of the luminescence unit in embodiment one；
Fig. 3 is the experimental result schematic diagram in embodiment one；
Fig. 4 is the structure chart of the luminescence unit in embodiment two；
Fig. 5 is the luminescent layer position view in embodiment two；
Fig. 6 is the light emitting path schematic diagram in embodiment two.
Embodiment
In the following description, a large amount of concrete details are given to provide more thorough understanding of the invention.Certainly remove
These are described in detail outer, and the present invention can also have other embodiment.
Luminescence unit of the present invention and preparation method thereof is elaborated with reference to specific embodiment and accompanying drawing.
Embodiment one：
The structure of the luminescence unit of the present embodiment is as shown in figure 1, including anode 10；Hole injection layer（hole injection
Layer, HIL）20, it is covered on anode 10；The long adjustment layer 30 of chamber, is covered in hole injection layer（HIL）On 20；Hole passes
Defeated layer（Hole transport layer, HTL）40, it is covered on the long adjustment layer 30 of chamber；Luminescent layer（emitting
Layer, EML）50, it is covered in hole transmission layer（HTL）On 40；Electron transfer layer（Electron transport layer,
ETL）60, it is covered in luminescent layer（EML）On 50；Negative electrode 70, is covered in electron transfer layer（ETL）On 60；And light extraction
Layer 80, it is covered in the top of negative electrode 70.Wherein, the long adjustment layer 30 of anode 10, hole injection layer 20, chamber, hole transmission layer 40, hair
Photosphere 50, electron transfer layer 60 and negative electrode 70 form the micro-cavity structure of the luminescence unit.Wherein, hole injection layer 20, hole
Transport layer 40, luminescent layer 50, electron transfer layer 60 are organic material.
Further, anode 10 is total reflection electrode, and negative electrode 70 is semitransparent electrode, is distinguished on the both sides of luminescent layer EML 50
For hole transmission layer（HTL）40 and electron transfer layer（ETL）60；Wherein up and down between metal（Namely anode 10 and negative electrode 70 it
Between）Resonant cavity, and micro-cavity structure can be formed, so as to realize the ejection values of spectrum.Also, noted in hole transmission layer 40 and hole
Enter between layer 20 and the long adjustment layer 30 of chamber be present, for adjusting total chamber of micro chamber device length, so as to reach resonant wavelength and luminescent layer
The purpose of 50 intrinsic wavelength resonances enhancings.So that main peak is 470 nm blue-light device as an example, the thickness of the long adjustment layer 30 of chamber maintains
In 100 nm or so, the thickness of electron transfer layer 60 maintains 40 nm or so.
In such micro-cavity structure, resonance most strong position, that is, the antinodal points to resonate be present（Or claim antinode）, with ideal
Exemplified by metal mirror, as shown in Fig. 2 the anti-node location for the as ideally-reflecting metal that dotted line frame is drawn（The most strong position of resonance
Put）, difference is grown according to chamber, the number of anti-node position is different, and left, center, right represents the vibration wave of different cavity length respectively in Fig. 2
Shape figure, it is most left an antinodal points, middle two antinodal points and most right three antinodal points to be present.Under ideally-reflecting minute surface, resonance is most
Strong position is in the center of the chamber length of micro chamber device, but is exiting surface in view of there is one side in actual micro-cavity structure（I.e. half
Transparent cathode 70）, non-ideal metal, another metal covering（It is totally reflected anode 10）There is also penetration depth, it is therefore necessary to
Consider the influence of phase, therefore the centre position for the typically non-physical length of most strong position that resonates.
In the present embodiment, by adjusting the position of luminescent layer 50, allow it to be in the antinodal point of resonance and improved so as to reach
The purpose of device efficiency.Experimental data as shown in Figure 3, by changing the position of luminescent layer 50, it is allowed to be in resonance antinode position
Put so as to realize the lifting of efficiency.Specific experiment result is as follows：Embodiment 1 is luminescent layer position in traditional micro chamber device structure,
Embodiment 2 be in the present embodiment luminescent layer 50 to the movement of anode 10 200, embodiment 3 be in the present embodiment luminescent layer 50 to anode
10 movements 400, by the change of the position of luminescent layer 50, are progressively moved to resonance anti-node location, device by the position of luminescent layer 50
Efficiency is lifted to 107cd/A from 60cd/A, is effectively improved device efficiency.
It should be noted that the because centre of the resonance typically non-physical length of most strong position of actual micro chamber device structure
Position, therefore make it close to anode 10 by constantly moving luminescent layer 50 in the present embodiment（Can be by the way that hole transmission layer be thinned
40, and/or thicken electron transfer layer 60, and/or the method for thinned luminescent layer 50 adjusts the position of luminescent layer 50）, so as to look for
Go out the anti-node location that resonates, it is final test result indicates that, luminescent layer 50 is moved 400 to anode 10, you can so that luminescent layer 50
It is in the antinodal point position of resonance.It can draw node and antinodal points in micro-cavity structure be present from the experiment of the present embodiment（Antinode）,
When luminescent layer position is in antinodal points（Antinode）When, resonance effect is most strong, device efficiency highest.Because this anti-node location and microcavity
Certain relation be present in the design of structure, due to micro-cavity structure design it is different, therefore can not quantitatively illustrate luminescent layer position from
The distance of anode and cathode；Therefore, it is every to be placed on resonance anti-node location using luminescent layer position to lift the side of micro chamber device efficiency
The micro chamber device structure that method is designed, belongs to the present embodiment category, and its luminescent layer position be able to need to be done necessarily according to actual conditions
Adjustment.
Embodiment two：
The structure of the luminescence unit of the present embodiment is as shown in figure 4, including anode 10；Hole injection layer（HIL）20, it is covered in anode
On 10；Hole transmission layer（HTL）40, it is covered in hole injection layer（HIL）On 20；Luminescent layer（EML）50, it is covered in hole
Transport layer（HTL）On 40；Electron transfer layer（ETL）60, it is covered in luminescent layer（EML）On 50；Electron injecting layer
（Electron injection layer, EIL）90, it is covered in electron transfer layer（ETL）On 60；Negative electrode 70, is covered in electricity
Sub- implanted layer（EIL）On 90.Wherein, anode 10, hole injection layer 20, hole transmission layer 40, luminescent layer 50, electron transfer layer
60th, electron injecting layer 90 and negative electrode 70 form the micro-cavity structure of the luminescence unit.Wherein, hole injection layer 20, hole transport
Layer 40, luminescent layer 50, electron transfer layer 60, electron injecting layer 90 are organic material.
Wherein, the luminescence unit is OLED top emitting devices, and anode 10 is total reflection electrode, and negative electrode 70 is translucent electricity
Pole, between upper and lower metal（Namely between anode 10 and negative electrode 70）Resonant cavity can be formed, so as to realize the ejection values of spectrum.With
Main peak is hole transmission layer exemplified by 470 nm blue-light device（HTL）40 thickness is maintained near 100 nm, electron transfer layer
（ETL）60 thickness is maintained near 40 nm, in order to meet the effect of organic function layer original transmitted and resonant cavity resonance, one
As for, the chamber of micro-cavity structure length needs to meet formula：, can so realize resonance
Effect.Wherein, L ' is the optical length of the chamber length of micro-cavity structure, and φ is the phase difference of reflecting interface, and λ is resonant wavelength.
In experimentation, it has been found that the change of the position of luminescent layer 50 can also affect to device spectral,
Specific experiment process is as follows：The pass of luminous colour code and the position of luminescent layer 50 is observed by changing the luminous position of luminescent layer 50
System.Fig. 5 is specifically shown in, divides three kinds of situations to illustrate, Case3 is luminescent layer 50 close to anode 10；Case2 lights compared to Case3
Region is to negative electrode 70 close to 50；Case1 is compared to Case3, and light-emitting zone is to negative electrode 70 close to 100.By such adjustment,
It was found that it is stepped up by Case3 to Case1, the CIE X of device, by 0.15 → 0.16 → 0.17, i.e., with the hair of device
Photosphere 50 is away from anode 10, device spectral progressively red shift.
Therefore it may be concluded that in micro-cavity structure, the change of the position of luminescent layer 50 also influences whether the spectrum of device,
Its concrete reason can explain by Fig. 6, and Fig. 6 left figures are the path that luminescent layer 50 is directly launched, and right figure is luminescent layer 50 through mirror
Face（It is totally reflected anode 10）The path profile for reflecting and being formed, path difference between the two is 2nd, it is contemplated that the phase of mirror-reflection
Potential difference Φ ', if it is possible to produce Constructive interaction, then need to meet relation：.From this formula
As can be seen that wavelength X has larger relation with d values, i.e. d values are bigger, and wavelength X is bigger, spectral red shift, for OLED RGB devices
For part, if by light-emitting zone away from minute surface emission layer（It is totally reflected anode 10）, then spectrum will red shift；According to so
Theory, for OLED, if we by luminescent layer 50 away from specular layer（Can be by increasing hole transmission layer
HTL 40 thickness, and/or the method for reduction electron transfer layer ETL 60 thickness cause luminescent layer 50 close to negative electrode 70, so that
The long thickness of total chamber can be reduced）, then spectrum will red shift, if expecting target optical spectrum, we can be by reducing total chamber
Long method can thus reach to realize target optical spectrum and reduce the purpose that organic material consumes.
So in the present embodiment, we are by luminescent layer（EML）50 closer to transparent cathode 70, away from reflection anode
10, the long thickness of total chamber can be thus reduced, reduces materials'use, reduces production cost.For blue light B top emitting devices,
ETL thickness can be controlled, and HTL thickness is maintained between 200 to 400 between 200 to 1000；Green glow G is pushed up
For ballistic device, ETL thickness can be controlled between 200 to 1500, HTL thickness maintain 200 to 400 it
Between；For feux rouges R top emitting devices, can controlling ETL thickness, HTL thickness maintains between 200 to 1800
Between 200 to 400；To reach so that luminescent layer 50 is close to transparent cathode 70, away from reflection anode 10, so as to reduce total chamber
Long thickness, reduce organic material and use, reduce the purpose of production cost.
It is noted that the present embodiment is by taking top emitting device as an example, every utilize increases luminescent layer 50 and specular layer
（It is totally reflected anode 10）The distance between reduce the micro chamber device structure of materials'use, belong to the category of the present embodiment.
The optimization that the present embodiment passes through device architecture, it is possible to reduce the use of organic material, be produced into so as to reduce OLED
This, promotes OLED industry developments.
In presently preferred embodiment, by the way that luminescent layer 50 is moved to negative electrode 70, it is thick to reduce total chamber length
While spending so that luminescent layer 50 is located at the resonance anti-node location of micro-cavity structure, increases luminous efficiency.
In summary, the position of the invention by adjusting luminescent layer, luminescent layer position is fixed on to the side of resonance anti-nodes
Method lifts device efficiency, so also can further promote the industrialization of OLED industries；Or by luminescent layer away from reflection anode,
To subtract total chamber length so as to reduce the use of organic material, so as to reduce the production cost of OLED micro chamber device, for entering for OLED
One step industrialization provides support.
For a person skilled in the art, after reading described above, various changes and modifications undoubtedly will be evident.
Therefore, appended claims should regard whole variations and modifications of the true intention and scope that cover the present invention as.Weighing
Any and all scope and content of equal value, are all considered as still belonging to the intent and scope of the invention in the range of sharp claim.
Claims (11)
1. a kind of luminescence unit, it is characterised in that including micro-cavity structure, and the micro-cavity structure includes negative electrode, anode and is located at
Luminescent layer between the negative electrode and the anode, and the light of luminescent layer transmitting projects after micro-cavity structure resonance
The luminescence unit；
Wherein, the light in the micro-cavity structure through reflecting to form standing wave, and the anti-node location of the standing wave and the hair
Photosphere is overlapping.
2. luminescence unit as claimed in claim 1, it is characterised in that the anti-node location is anti-for the resonance of the micro-cavity structure
Node location.
3. luminescence unit as claimed in claim 1, it is characterised in that in the micro-cavity structure, in addition to：
Hole injection layer, it is covered on the anode；
Hole transmission layer, be covered on the hole injection layer, and the luminescent layer covering positioned at the hole transmission layer it
On；And
Electron transfer layer, it is covered on the luminescent layer, and negative electrode covering is on the electron transfer layer.
4. luminescence unit as claimed in claim 3, it is characterised in that in the micro-cavity structure, in addition to：
The long adjustment layer of chamber, between the hole injection layer and the hole transmission layer, to adjust the micro-cavity structure
Total chamber length.
5. luminescence unit as claimed in claim 1, it is characterised in that the anode is total reflection anode, and the negative electrode is half
Transparent cathode.
6. luminescence unit as claimed in claim 1, it is characterised in that also include：
Light-extraction layer, it is covered in the top of the negative electrode.
A kind of 7. preparation method of luminescence unit, it is characterised in that including：
One anode is provided, is prepared on the anode and forms organic layer, and the organic layer includes being covered in the sun successively
Hole injection layer, hole transmission layer, luminescent layer, electron transfer layer on pole；
Prepare negative electrode to be covered on the electron transfer layer, to form micro-cavity structure in the luminescence unit；And
The thickness of the organic layer is adjusted, so that the luminescent layer is located at the resonance anti-nodes position of the micro-cavity structure；
Wherein, the resonance anti-nodes position is stayed for what the light that the luminescent layer projects reflected to form in the micro-cavity structure
The anti-node location of ripple.
8. preparation method as claimed in claim 7, it is characterised in that the method bag of the thickness of the adjustment organic layer
Include：The hole transmission layer is thinned and/or thickens the electron transfer layer and/or the luminescent layer is thinned.
9. preparation method as claimed in claim 7, it is characterised in that also include：
The long adjustment layer of chamber is prepared between the hole injection layer and the hole transmission layer, for adjusting the microcavity knot
Total chamber length of structure；And
The top that light-extraction layer is covered in the negative electrode is prepared, for strengthening the illumination effect of the luminescent layer.
A kind of 10. preparation method of luminescence unit, it is characterised in that including：
One anode is provided, is prepared on the anode and forms organic layer, and the organic layer includes being covered in the sun successively
Hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer on pole；
Prepare negative electrode to be covered on the electron injecting layer, to form micro-cavity structure in the luminescence unit；And
Thicken the hole transmission layer and/or the electron transfer layer is thinned, so that the luminescent layer is close to the negative electrode, and subtract
The long thickness of total chamber of the thin micro-cavity structure, save the cost of the micro-cavity structure.
11. preparation method as claimed in claim 10, it is characterised in that the luminescence unit is blue light top emitting device, and
The thickness of the electron transfer layer is 200 ~ 1000 angstroms, and the thickness of the hole transmission layer is 200 ~ 400 angstroms；Or
The luminescence unit is green glow top emitting device, and the thickness of the electron transfer layer is 200 ~ 1500 angstroms, the hole
The thickness of transport layer is 200 ~ 400 angstroms；Or
The luminescence unit is feux rouges top emitting device, and the thickness of the electron transfer layer is 200 ~ 1800 angstroms, the hole
The thickness of transport layer is 200 ~ 400 angstroms.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11121344B2 (en) | 2018-05-16 | 2021-09-14 | Yungu (Gu'an) Technology Co., Ltd. | Organic electroluminescent device |
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| US11121344B2 (en) | 2018-05-16 | 2021-09-14 | Yungu (Gu'an) Technology Co., Ltd. | Organic electroluminescent device |
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Application publication date: 20180306 |