CN107768392A - Semiconductor device and its manufacture method - Google Patents
Semiconductor device and its manufacture method Download PDFInfo
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- CN107768392A CN107768392A CN201710980840.2A CN201710980840A CN107768392A CN 107768392 A CN107768392 A CN 107768392A CN 201710980840 A CN201710980840 A CN 201710980840A CN 107768392 A CN107768392 A CN 107768392A
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- 238000005286 illumination Methods 0.000 claims description 4
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- 239000001301 oxygen Substances 0.000 description 10
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- 238000000059 patterning Methods 0.000 description 7
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
Abstract
A kind of semiconductor device of the disclosure and its manufacture method.Semiconductor device includes：Substrate, including groove and the transmission area opened by the trench separation；Cushion, formed in the substrate and cover the surface of the groove and the transmission area；And radiation regulating course, formed on the cushion, the radiation regulating course is included in the Part I on the cushion in the groove and the Part II on the cushion on the transmission area, the Part I is formed by radiant reflective material or radiation-absorbing material, and the Part II is formed by radiation transmissive material.
Description
Technical field
This disclosure relates to semiconductor applications, it particularly relates to semiconductor device and its manufacture method.
Background technology
Imaging sensor can be used for radiating (for example, light radiation, including but not limited to visible ray, infrared ray, ultraviolet
Deng) sensed, so as to generate corresponding electric signal (image).It is widely used in digital camera, security facility and its
In his imaging device.Imaging sensor can be divided into back-illuminated type (BSI) imaging sensor with before in the way of its reception radiation
Illuminated (FSI) imaging sensor.
Back-illuminated type (BSI) imaging sensor can be received from its back side and radiated.Different from preceding illuminated (FSI) image sensing
Device, in back-illuminated type (BSI) imaging sensor, the back surface incident entrance from substrate is radiated, and wiring etc. may influence radiation and connect
Front of the part of receipts generally within substrate.
For BSI imaging sensors, dark current is important index, and reducing dark current helps directly to lift imaging of taking pictures
Quality and reduce noise.Dark current is mainly by various defects, trap, electric charge and the dangling bonds of silicon face from sensing element
Leakage.To prevent the generation of dark current, surface emissivity is formed using ion implanting on each surface of silicon, so as to prevent electronics
Dark current is formed across silicon face, but which can reduce full trap electron capacitance (the Full Well of imaging sensor
Capacity)。
On the other hand, it is ensured that by the crosstalk minimization between each sensing element, for imaging sensor and important.
It is, therefore, desirable to provide a kind of new technology solves above-mentioned one or more problems of the prior art.
The content of the invention
The first purpose of some embodiments of the present disclosure is to provide a kind of improved semiconductor device and its manufacture method.Root
Adjustable surface emissivity can be provided according to the semiconductor device of the embodiment of the present disclosure, so as to suppress dark current significantly.According to this
The semiconductor device of disclosed one embodiment can also reduce sensing unit (such as the photosensitive member that pixel or pixel are included
Part (such as photodiode)) between crosstalk, improve quantum efficiency (QE).
According to the disclosure on one side, there is provided a kind of semiconductor device, including：Substrate, including groove and by described
The transmission area that trench separation is opened；Cushion, formed in the substrate and cover the surface of the groove and the transmission
Area；And radiation regulating course, formed on the cushion, the radiation regulating course is included in the institute in the groove
The Part I on cushion and the Part II on the cushion on the transmission area are stated, it is described
Part I is formed by radiant reflective material or radiation-absorbing material, and the Part II is formed by radiation transmissive material.
In one embodiment, the Part I is formed by the high dielectric constant material of metal phase, and described second
Part is formed by the high dielectric constant material of medium phase.
In one embodiment, the high dielectric constant material of the medium phase and the high dielectric constant material of the metal phase
Constitution element is identical, but the stoicheiometry of constitution element is different.
In one embodiment, the substrate includes being used for the radiation sensitive unit for sensing radiation, the transmission area and institute
It is corresponding to state radiation sensitive unit.
In one embodiment, in a top view, the transmission area and the radiation sensitive unit are least partially overlapped.
In one embodiment, the semiconductor device is back side illumination image sensor.In one embodiment, wherein institute
State radiation sensitive unit to be formed to close on the front of the substrate, the groove and the transmission area are located at the back of the body of the substrate
Face, the cushion are formed on the back side of the substrate.
In one embodiment, the semiconductor device also includes：Upper cover layer, the upper cover layer comprise at least
Antireflection material layer, the upper cover layer is at least on the radiation regulating course.
In one embodiment, the depth-to-width ratio of the groove is 5: 1 or bigger.
According to an aspect of this disclosure, there is provided a kind of method for manufacturing semiconductor device, comprise the following steps：There is provided
Substrate, the substrate include groove and the transmission area opened by the trench separation；Cushion, institute are formed in the substrate
State cushion and cover the surface of the groove and the transmission area；And radiation regulating course, institute are formed on the cushion
State radiation regulating course and be included in Part I on the cushion in the groove and in the transmission
The Part II on the cushion on area, the Part I is by radiant reflective material or radiation-absorbing material shape
Into the Part II is formed by radiation transmissive material.
In one embodiment, the Part I is formed by the high dielectric constant material of metal phase, the Part II
Formed by the high dielectric constant material of medium phase.
In one embodiment, the high dielectric constant material of the medium phase and the high dielectric constant material of the metal phase
Constitution element is identical, but the stoicheiometry of constitution element is different.
In one embodiment, forming the radiation regulating course includes：In the trench and on the transmission area
The cushion on form the intermediate layer of material that is formed by radiant reflective material or radiation-absorbing material, and to described
Intermediate layer of material is handled, to cause part of the intermediate layer of material on the transmission area to become radiation transmission.
In one embodiment, carrying out processing to the intermediate layer of material includes：Make the intermediate layer of material experience in nitrogen
Annealing under gas or oxygen atmosphere.
In one embodiment, forming the radiation regulating course includes：In the trench and on the transmission area
The cushion on formed made of radiant reflective material or radiation-absorbing material intermediate layer of material；In the centre
Intermediate layer is formed in material layer, the intermediate layer covers the part in the trench of the intermediate layer of material, and makes described
Expose part of the intermediate layer of material on the transmission area；And at the part exposed to the intermediate layer of material
Reason, to cause part of the intermediate layer of material on the transmission area to become transmission.
In one embodiment, the processing for the part exposed to the intermediate layer of material includes：In nitrogen or oxygen
Atmosphere enclose under annealing process or the ion implantation technology using oxygen or nitrogen.
In one embodiment, methods described is further comprising the steps of：Remaining intermediate layer is removed, makes the intermediate materials
Expose the part of layer in the trench.
In one embodiment, forming the radiation regulating course includes：Formed on the cushion by radiation reflective
The intermediate layer of material that material or radiation-absorbing material are formed, the intermediate layer of material are included in the part on the transmission area
And part in the trench；Using the mask of patterning, the intermediate layer of material is removed on the transmission area
Part；And the position of the part being removed in intermediate layer of material on the transmission area forms radiation transmissive material layer.
In one embodiment, methods described also includes：The mask of patterning is removed, makes the intermediate layer of material described
Expose part in groove.
In one embodiment, the substrate includes being used for the radiation sensitive unit for sensing radiation, the transmission area and institute
It is corresponding to state radiation sensitive unit.
In one embodiment, in a top view, the transmission area and the radiation sensitive unit are least partially overlapped.
In one embodiment, the semiconductor device is back side illumination image sensor.In one embodiment, the spoke
Sensing unit to be penetrated to be formed to close on the front of the substrate, the groove and the transmission area are located at the back side of the substrate,
The cushion is formed on the back side of the substrate.
In one embodiment, methods described also includes：After the radiation regulating course is formed, top covering is formed
Layer, the upper cover layer comprise at least antireflection material layer, and the upper cover layer is at least on the radiation regulating course.
In one embodiment, the depth-to-width ratio of the groove is 5: 1 or bigger.
An advantage in accordance with an embodiment of the present disclosure is, can provide surface emissivity, so as to suppress dark current, improves
Picture quality, without influencing whether full trap electron capacitance.
Another advantage in accordance with an embodiment of the present disclosure is, it is possible to reduce each sensing unit (or sensing unit institute
Comprising sensing element) between crosstalk, and improve quantum efficiency, improve picture quality.
By referring to the drawings to the detailed description of the exemplary embodiment of the disclosure, the further feature of the disclosure and its
Advantage will be made apparent from.
Brief description of the drawings
The accompanying drawing of a part for constitution instruction describes embodiment of the disclosure, and is used to solve together with the description
Release the principle of the disclosure.
Referring to the drawings, according to following detailed description, the disclosure can be more clearly understood, wherein：
Fig. 1 is the schematic sectional view for showing the semiconductor device according to disclosure one embodiment.
Fig. 2 is the flow chart for the manufacture method for showing the semiconductor device according to disclosure one embodiment.
Fig. 3 A to 3H are the schematic cross-sectionals for showing semiconductor device corresponding with the part steps of the method shown in Fig. 2
Figure.
Fig. 4 A to 4F are the part steps corresponding semiconductor dresses for the method according to another embodiment with Fig. 2 that shows
The schematic sectional view put.
Fig. 5 is the schematic sectional view for showing the semiconductor device according to the disclosure another embodiment.
Fig. 6 is the flow chart for the manufacture method for showing the semiconductor device according to the disclosure another embodiment.
Fig. 7 A to 7G are the schematic cross-sectionals for showing semiconductor device corresponding with the part steps of the method shown in Fig. 6
Figure.
Pay attention to, in embodiments described below, be used in conjunction with same reference between different accompanying drawings sometimes
Come the part for representing same section or there is identical function, and omit its repeat specification.In this manual, using similar mark
Number and letter represent similar terms, therefore, once be defined in a certain Xiang Yi accompanying drawing, then in subsequent accompanying drawing do not need pair
It is further discussed.
In order to make it easy to understand, position, size and scope of each structure shown in accompanying drawing etc. etc. does not indicate that reality sometimes
Position, size and scope etc..Therefore, disclosed invention is not limited to position, size and scope disclosed in accompanying drawing etc. etc..
Embodiment
The various exemplary embodiments of the disclosure are described in detail now with reference to accompanying drawing.It should be noted that：It is unless specific in addition
Illustrate, part and the positioned opposite of step, numerical expression and the numerical value otherwise illustrated in these embodiments is unlimited to make this public affairs
The scope opened.In addition, may be not discussed in detail for technology, method and apparatus known to person of ordinary skill in the relevant,
But in the appropriate case, the technology, method and apparatus should be considered as authorizing part for specification.
Word "front", "rear", " top ", " bottom " in specification and claim, " on ", " under " etc., if deposited
If, it is not necessarily used to describe constant relative position for descriptive purposes.It should be appreciated that the word so used
Language is interchangeable in appropriate circumstances so that embodiment of the disclosure described herein, for example, can with this institute
Those of description show or other are orientated in other different orientations and operated.
Any implementation of this exemplary description be not necessarily to be interpreted it is more preferable than other implementations or
Favourable.Moreover, the disclosure is not gone out by given in above-mentioned technical field, background technology, the content of the invention or embodiment
Theory that is any stated or being implied limited.
In this manual, " semiconductor device " refers to that its a part or whole part being capable of partly leading by using semiconductor element
Bulk properties and all devices to work, therefore, electro-optical device, electrooptical device, semiconductor circuit and electronic equipment etc. are all partly to lead
Body device.
As used in this, word " substantially " mean comprising by design or manufacture the defects of, device or element appearance
Any small change caused by difference, environment influence and/or other factorses.Word " substantially " also allows by ghost effect, made an uproar
Caused by sound and the other actual Considerations being likely to be present in actual implementation with perfect or preferable situation
Between difference.
Foregoing description can indicate to be " connected " or " coupling " element together or node or feature.As used herein
, unless otherwise expressly noted, " connection " means an element/node/feature with another element/node/feature in electricity
Above, mechanically, in logic or otherwise it is directly connected (or direct communication).Similarly, unless otherwise expressly noted,
" coupling " mean an element/node/feature can with another element/node/feature in a manner of direct or be indirect in machine
On tool, electrically, in logic or otherwise link to allow to interact, even if the two features may be not direct
Connection is also such.That is, " coupling " is intended to encompass the direct link of element or further feature and linked indirectly, including profit
With the connection of one or more intermediary elements.
In addition, just to the purpose of reference, can also be described below it is middle use certain term, and thus not anticipate
Figure limits.For example, unless clearly indicated by the context, be otherwise related to the word " first " of structure or element, " second " and it is other this
Class numeral word does not imply order or sequence.
It should also be understood that the word of "comprises/comprising" one is as used herein, illustrate pointed feature, entirety, step be present
Suddenly, operation, unit and/or component, but it is not excluded that in the presence of or the one or more of the other feature of increase, entirety, step, behaviour
Work, unit and/or component and/or combinations thereof.
In the disclosure, therefore term " offer " " it is right to provide certain from broadly by covering obtain object all modes
As " including but not limited to " purchase ", " preparation/manufacture ", " arrangement/setting ", " installation/assembling ", and/or " order " object etc..
The description at least one exemplary embodiment is merely illustrative below, is not to the disclosure and its application
Or any restrictions used.
Fig. 1 is the schematic sectional view for showing the semiconductor device according to disclosure one embodiment.
As shown in figure 1, semiconductor device 100 includes substrate 101.The example of the material of substrate 101 can include but unlimited
In unitary semi-conducting material (such as, silicon or germanium etc.), compound semiconductor materials (such as carborundum, SiGe, GaAs, phosphatization
Gallium, indium phosphide, indium arsenide and/or indium antimonide) or its combination.Had no particular limits for substrate 101, as long as it is suitable at it
The middle radiation sensitive unit formed for sensing radiation (for example, light).Therefore, in some implementations, semiconductor fills
Imaging sensor can also be referred to as by putting.
Substrate 101 can have the first main surface (for example, front) and the relative second main surface.Substrate 101 can have
There is the radiation sensitive unit for sensing radiation.Such as the sensing area that substrate 101 can include being used to sense radiation (does not show
Go out), in sensing area, the radiation sensitive unit for sensing radiation is could be formed with, as 150 in Fig. 3 A schematically refer to
Show.In some embodiments of the present disclosure, radiation sensitive unit can refer to comprising radiation sensor (also referred to as radiation sensitive
Element, such as, photodiode) pixel) or radiation-sensing element.
As shown in figure 1, substrate 101 can include groove 120 and the transmission area 130 separated by the groove 120.
Transmission area 130 can be configured to corresponding with the radiation sensitive unit in substrate 101.In one embodiment, example
Such as, the transmission area 130 to be formed can be caused with radiation sensitive unit 150 in a top view (that is, in the main table with substrate 101
When being overlooked on the vertical direction in face) it is substantially overlapping.Preferably, in a top view, transmission area 130 extends beyond radiation sense
Unit 150 is surveyed, to ensure that radiation sensitive unit 150 fully receives radiation.
In the present embodiment, the depth-to-width ratio of suitable groove or inclination angle is selected to be advantageously implemented isolation and carry out institute below
The PROCESS FOR TREATMENT of description.In some instances, the depth-to-width ratio of groove can be 5: 1 or bigger, such as can be 5: 1 to 20: 1
Between.In other examples, the depth-to-width ratio of groove can be between 5: 1 to 30: 1.In certain embodiments, the width of groove can
With less than 1 micron.For instance, it is preferred that the width of groove can be 80nm-300nm.It is highly preferred that the width of groove can be
100nm-200nm.Moreover it is preferred that groove is arranged to substantially substantially vertical with the main surface of substrate.In the implementation of the disclosure
In example, groove is more than 85 degree relative to the inclination angle of substrate main surface can be considered as perpendicular to one another.But the skill of this area
Art personnel should be appreciated that in the other embodiment of the disclosure, the depth-to-width ratio of groove and the value not limited to this at inclination angle.
Although only showing that the transmission area 130 that two grooves 120 and groove 120 separate describes to simplify in figure,
But the person skilled in the art will easily understand, any number of groove and transmission area can be formed in the substrate 101 as needed,
Without departing from the scope of this disclosure.
Semiconductor device 100 also includes the cushion 102 formed on substrate 101.In certain embodiments, cushion
102 can be formed by advanced low-k materials, but the invention is not restricted to this.For example, the typical material for cushion 102 can
To be silica (SiO2).Preferably, the thickness of cushion 102 can be 1nm to 10nm (representative value is such as 3-5nm).
As shown in figure 1, cushion 102 can be with the surface of covering groove 120 and the surface of transmission area 130.In other words, cushion 102
The part formed on the transmission area of substrate can be included, and form the part on groove septal fossula rooved face.Preferably,
Cushion 102 is arranged to be transmission for radiation, with reception of the enhanced rad sensing unit 150 to radiation.
In some implementations, radiation sensitive unit 150 can be formed as adjacent to the front of the substrate, and groove
120 and the transmission area 130 be then arranged to the back side positioned at the substrate.The cushion can be then formed in the substrate
The back side on.In this case, semiconductor device 100 is configured as back side illumination image sensor.
Semiconductor device 100 also includes the radiation regulating course 103 formed on cushion 102.As shown in figure 1, can be with
The Part I 104 being included on the cushion 102 in groove, and in the cushion 102 on transmission area
On Part II 106.Part I 104 can be formed by radiant reflective material or radiation-absorbing material.Part II
106 can be formed by radiation transmissive material.Formed Part I 104 material can be typical metal (for example, titanium, tantalum,
Aluminium, and tungsten etc.) or metal phase high-k (also referred to as high k) material (for example, aluminum oxide, hafnium oxide, lanthana, zirconium oxide,
Hafnium alumina etc.).Preferably, the thickness of Part I 104 can be for 2nm-10 so, typically such as 6-7nm.Form second
The material of part 106 can be medium phase high dielectric constant material (or being insulation phase high dielectric constant material), for example, oxidation
Hafnium, lanthana, zirconium oxide, hafnium alumina etc..Preferably, the thickness of Part II 106 can be 1nm to 20nm (exemplified by typically
Such as 6-7 nm).
For example, in certain embodiments, Part I 104 can be formed by metal phase high dielectric constant material, second
Divide 106 can be formed by medium phase high dielectric constant material.As an example, high dielectric constant material can include such material
Material, it includes metallic element and oxygen.For constitution element identical high dielectric constant material, the wherein stoicheiometry of constitution element
Difference can cause the characteristic (for example, the optical characteristics such as transmittance) of material different.Usually, in metal phase high-k
In material, the ratio of metallic element can be higher than its stoicheiometry.And in medium phase high dielectric constant material, metallic element
Ratio can be below its stoicheiometry.
Due in regulating course 103 is radiated, radiant reflective material or radiation absorption material are used at Part I 104
Material, and radiation transmissive material is used at Part II 106, therefore, when radiation (such as, light radiation) is irradiated to the such as second master
When on surface, radiation can be in desired fashion by radiating regulating course 103 or being stopped by radiation regulating course 103.Specifically
For, it is incident on the radiation at Part I 104 corresponding with groove 120 and will undergoes and reflect or absorb, so as to is blocked；And enter
The radiation penetrated at Part II 106 corresponding with sensing unit 150, which will be undergone, to be transmitted, and is felt so as to subsequently enter sensing unit
Survey.Therefore, by using the arrangement of the radiation regulating course 103 described in the present embodiment, adjacent sense can be efficiently reduced
The crosstalk surveyed between unit (for example, sensing element included in pixel or pixel), so as to further improve quantum efficiency
(QE)。
In addition, the property (such as defect, dangling bonds) inside high dielectric constant material layer due to its own can be wherein
Constraint or accumulated charge.When high dielectric constant material layer has negative (just) electric charge of accumulation, it attracts just (negative) in substrate
Electric charge and form electric dipole.Electric dipole can form electrostatic barrier, so as to limit by the dangling bonds of such as interface
Adverse effect caused by (dangling bond) or other surfaces defect.Therefore, shape is carried out by using high dielectric constant material
Radiation regulating course 103 described in cost implementation, the difficulty that tunnelling occurs for carrier (such as electronics) is increased, so as to reduce
The generation of dark current.
Semiconductor device 100 also includes the upper cover layer 111 formed on radiation regulating course.Upper cover layer is extremely
Antireflection material layer can be included less.In certain embodiments, upper cover layer can include multilayer.As shown in figure 1, at one
In embodiment, upper cover layer 111 can include above overlaying on radiation regulating course 103 (covering Part I 104 and second
Part 106) cushion 108, and the anti-reflecting layer 110 on cushion 108.Anti-reflecting layer 110 can be one layer or
Multilayer.Preferably, intermediate layer 111 is additionally may included in the packed layer 112 on anti-reflecting layer 110.
In certain embodiments, anti-reflecting layer 110 can be by high-k (high k) material, such as silicon nitride, titanium dioxide
Hafnium etc. is made.Preferably, the thickness of anti-reflecting layer 110 can be 10nm to 200nm (representative value 20-170nm).Cushion
108 and packed layer 112 for example can be made up of silica, but the invention is not restricted to this.Preferably, the thickness of cushion 108
Can be 1nm to 50nm (representative value 4-20nm).The thickness of packed layer 112 can be, for example, 100nm to 500nm (representative values
For 150-300nm).It should be understood that upper cover layer 111 (including cushion 108, anti-reflecting layer 110, packed layer 112) is excellent here
Choosing is configured to preferably through radiation.
Fig. 2 is the flow chart for the manufacture method for showing the semiconductor device according to disclosure one embodiment.Fig. 3 A to 3H
It is the schematic sectional view for showing semiconductor device corresponding with the part steps of the method shown in Fig. 2.Below in conjunction with Fig. 2 and
Fig. 3 A-3H are illustrated.Corresponding feature is readily applicable to above in conjunction with the content described by Fig. 1.
In step 202, there is provided substrate (for example, Fig. 3 A substrate 101).
Substrate 101 can include being used for the sensing unit 150 for sensing radiation, as shown in Figure 3A.It should be understood that in Fig. 3
Sensing unit 150 is only an exemplary expression.In certain embodiments, radiation sensitive unit can be formed by shape
As neighbouring first main surface, such as in the first main surface (such as front of substrate) of substrate, or one part can be with
Protrude from the first main surface, in the major surface or under main surface.In addition, although only show a sensing unit 150 so as to
Simplify and describe, but the person skilled in the art will easily understand, any number of sensing unit 150 can be formed in the substrate 101,
Without departing from the scope of this disclosure.
In addition, in different embodiments, the substrate 101 provided can be by or without thinned.
Alternatively, in step 202, suitable thickness can be thinned to from the back side by substrate 101.Reduction process can include
Mechanical milling tech and chemical reduction technique.The thickness of substrate 101 can be configured according to application type and design requirement.
Afterwards, in step 204, can on substrate 101 (such as on back side of substrate 101) formed groove 120 (see
Fig. 3 B).
In one embodiment, groove 120 can be formed by etch process.It can use known in the art any
Suitable etch process forms groove 120 using the mask (for example, photoresist or hard mask) of patterning.It is preferred that
Ground, the width of groove are less than 1 micron.It is further preferred that the depth-to-width ratio of groove may be between 5: 1 to 30: 1.In addition, ditch
The inclination angle of groove can be, for example, more than 85 degree and less than or equal to 90 degree.
Substrate 101 is separated into transmission area 130 corresponding with sensing unit 150 by groove 120.In one embodiment, may be used
Make it that formed transmission area 130 and sensing unit 150 are overlapping in a top view.
Afterwards, in step 206, cushion 102 can be formed on groove 120 (see Fig. 3 C).
As shown in Figure 3 C, cushion 102 can include the part formed on transmission area 130 and be formed in groove
Part on flute surfaces.Alternatively, cushion 102 can be conformally formed on groove 120.In one embodiment
In, cushion 102 can include the dielectric substance of such as silica.Alternatively, the thickness of cushion 102 can be 1nm
To 10nm.Cushion 102 can be by chemical vapor deposition (CVD), ald (ALD), thermal oxidation technology or other are suitable
The technology of conjunction is formed.
Pay attention to, in Fig. 3 C into 3H non-illustrated sensing unit, it should be appreciated that with the substrate 101 in Fig. 3 A similarly,
Fig. 3 C to 3H substrate 101 can also include the sensing unit formed with radiation sensitive unit or pixel.
Afterwards, in step 208, radiation regulating course 103 is formed on cushion 102.
As an example, in the present embodiment, as shown in Fig. 3 D and Fig. 3 E, radiation regulating course 103 can pass through two
Sub-step is formed.First, as shown in Figure 3 D, cushion 102 (it include part of the groove in 120 and outside groove (
That is, on transmission area) part) on form intermediate layer of material 107.Intermediate layer of material 107 can by radiant reflective material or
Person's radiation-absorbing material is formed.Material for forming intermediate layer of material 107 can include metal phase high dielectric constant material (example
Such as hafnium oxide, lanthana, zirconium oxide, hafnium alumina etc.)).Can be for example, by ald, CVD metallo-organic compound gas
(MOCVD) technique, sputtering or other suitable technologies are mutually deposited to form intermediate layer of material 107.Preferably, intermediate layer of material
107 thickness can be such as 2-20nm, be typically 5-10nm.
Then, as shown in FIGURE 3 E, intermediate layer of material 107 is handled, to cause it (in other words, to exist outside groove 120
On transmission area 130) part become in pairs radiation in transmission, with formed radiate regulating course Part II 106 (for example, be situated between
Matter phase dielectric layer of high dielectric constant).Part of the intermediate layer of material 107 in groove 120 retains its reflection characteristic, so as to form spoke
Penetrate the Part I 104 of regulating course.After being handled more than completing, the radiation for including Part I 104 and Part II 106 is formed
Regulating course 103.
Preferably, the depth-to-width ratio of the groove is between 5: 1 to 30: 1.The processing is included under nitrogen or oxygen atmosphere
Annealing process., can be to treatment conditions (such as, nitrogen or oxygen in the annealing process under carrying out nitrogen or oxygen atmosphere
Concentration, diffusion velocity) be controlled by, to cause oxygen or nitrogen to enter the (saturating in the part of substrate surface of intermediate layer of material 107
The part penetrated on area 130), and do not enter the part in groove of intermediate layer of material 107 less or substantially, so that
The part on surface, which must be in, turns into transmission, and the part in groove still keeps reflectivity properties.In this way, form radiation regulating course
103。
In one embodiment, intermediate layer of material 107 (and Part I 104 of radiation regulating course) is by metal phase height
Dielectric constant material (for example, hafnium oxide, lanthana, zirconium oxide, hafnium alumina etc.) formation.And radiate the Part II of regulating course
106 are formed by medium phase high dielectric constant material.Preferably, in certain embodiments, metal phase high dielectric constant material and Jie
Matter phase high dielectric constant material can have identical constitution element, but the stoicheiometry of constitution element is different.
Afterwards, in step 210, upper cover layer 111 is formed on radiation regulating course 103.
In certain embodiments, upper cover layer can be formed as sandwich construction.Upper cover layer comprises at least anti-reflective
Penetrate material layer.In one embodiment, as illustrated in Figure 3 F, cushion 108 is formed on radiation regulating course 103.For example, buffering
Layer 108 can include the dielectric substance of such as silica.Preferably, the thickness of cushion 108 is 1nm to 50nm (typical cases
It is worth for 4nm).Cushion 108 can be formed by ald, thermal oxidation technology or other suitable technologies.
Then, as shown in Figure 3 G, anti-reflecting layer 110 is formed on cushion 108.Anti-reflecting layer 110 can be one layer
Or multilayer.The material of anti-reflecting layer 110 can including silicon nitride etc. high K medium.Preferably, the thickness of anti-reflecting layer 110 is
10nm to 200nm, typically 70nm.
Afterwards, alternatively, as shown in figure 3h, packed layer 112 can be formed on anti-reflecting layer 110.Packed layer 112
Material can include silica.Preferably, the thickness of packed layer 112 is 100nm to 500nm (representative value 200nm).Fill out
Filling layer 112 can be formed by ald or high-aspect-ratio deposition manufacture process (Harp) technique or other suitable technologies.
Although upper cover layer, which is shown in the drawings, includes cushion 108, antireflection material layer 110 and packed layer
112, it should be appreciated that the invention is not restricted to this.
Fig. 4 A to 4D are to show to realize the corresponding semiconductor dress of the method and step 210 shown in Fig. 2 according to another embodiment
The schematic sectional view put.In this embodiment, (step 210) in Fig. 2 can pass through several sub-steps to radiation regulating course 103
It is rapid to be formed.For layer corresponding to each layer described by Fig. 1 or Fig. 3 A-3D above in conjunction in the semiconductor device, here no longer
Repeat specification.
Fig. 4 A show with Fig. 3 D identical structures, wherein foring intermediate layer of material 107 on cushion 102.It is middle
Material layer 107 can be formed by the material for reflecting or absorbing radiation.
Afterwards, as shown in Figure 4 B, the mask (for example, hard mask) 170 of patterning is formed on intermediate layer of material 107.
The mask 170 of the patterning causes part of the intermediate layer of material 107 outside groove 120 (in other words, on transmission area 130
Part) expose, as shown in FIGURE 3 E.In the case of using hard mask, hard mask can also be used as intermediate layer in some cases
And retain.
Afterwards, in certain embodiments, the exposed portion of intermediate layer of material 107 can be handled so that intermediate wood
Exposed portion (part outside groove 120) in the bed of material 107 becomes transmission, to form the Part II for radiating regulating course 103
106.Now, the part (part in groove 120) that intermediate layer of material 107 is masked is not subjected to this and gone out, so as to retain its reflection
Or the characteristic of radiation is absorbed, so as to form the Part I 104 of radiation regulating course 103, as shown in figure 3h.
Any of suitable handling process can be used herein.In one embodiment, the processing can include
Undergo the exposed portion of intermediate layer of material 107 for example, annealing under oxygen either nitrogen atmosphere or utilizing oxygen or nitrogen
Ion implanting etc., to cause the part to become to transmit.
In another embodiment, as shown in Figure 4 C, using the mask 170 of patterning, for example, by etch process, in removal
Between material layer 107 the part (that is, part on transmission area 130) exposed.It can be used herein any of suitable
The etch process of conjunction, wet etching, dry etching (such as plasma etching).Here, intermediate layer of material is partly gone
Remainder after removing still is indicated with 107.
Afterwards, material layer 180 is formed in the structure shown in Fig. 3 F, as shown in Figure 4 D.Material layer 180 can be by being for example situated between
Matter phase high K medium is formed.
The undesirable part of material layer 180 can be removed afterwards, to cause material layer 180 in intermediate layer of material 107
The part for being removed the opening position of part is retained, and alternatively removes mask 170, as shown in Figure 4 E.In this way, it can be formed
Radiate regulating course 103.
Afterwards can be by forming upper caldding layer 111 with the same or similar techniques of Fig. 3 F-3H, as illustrated in figure 4f.
It should be understood that according to the present embodiment, intermediate layer of material 107 is not limited to be formed by metal phase high-g value, but can be by
The material of various appropriate reflections or absorption radiation is formed.In one embodiment, intermediate layer of material 107 (and radiation adjust
Ganglionic layer Part I 104) it can be formed by metal material.Preferably, selected metal includes one of the following or a variety of：
Titanium, tantalum, aluminium, tungsten, its alloy or its combination etc..Part II 106 can be by such as medium phase high dielectric constant material (example
Such as, hafnium oxide, lanthana, zirconium oxide, hafnium alumina etc.) or other appropriate transmission materials formed.
Fig. 5 shows the schematic sectional view of the semiconductor device according to the disclosure another embodiment.It is just different above
Content described by embodiment can be equally applicable to the corresponding component of the present embodiment.Therefore, in order to simplify description, exist below
Description is described in detail according in various embodiments of the present invention only for the difference between each embodiment, and omission pair
The repeat specification of same or analogous part.
As shown in figure 5, semiconductor device 500 includes substrate 501.Substrate 501 can include groove 520 and by the ditch
The transmission area 530 that groove 520 separates.
Semiconductor device 500 is additionally may included in the cushion 502 on substrate 501 and the radiation on cushion 502
Regulating course 503.Radiation regulating course 503 can include the Part I 504 on cushion 502 in the trench and transmit
Part II 506 on the cushion 502 of (in other words, outside groove) on area.
Semiconductor device 500 also include formed in the trench, radiation the Part I 504 of regulating course 503 in
Interbed 505.In some implementations of the present embodiment, intermediate layer 505 can be substantially filled with groove 520.Intermediate layer 505
Upper surface can be substantially flush with radiating the upper surface of Part I 504 of regulating course 503, can also either exceed or
Less than the latter.Intermediate layer 505 can be formed by insulating materials, such as silica or silicon nitride etc..
Semiconductor device 500 also includes being formed on the Part II 506 of radiation regulating course 503 and intermediate layer 505
Upper cover layer 511.In certain embodiments, upper cover layer 511 can be multilayer.Upper cover layer 511 can be wrapped at least
Include antireflection material layer.The upper cover layer 511 formed in semiconductor device 500 and the top formed in semiconductor device 100
Coating 111 is substantially similar, and difference is：Upper cover layer 511 is not formed in groove 520, and upper cover layer
111 parts for including being formed in groove.In other words, here, upper cover layer 511 is basically formed and (in other words, retained)
On transmission area.This point is better understood with from following explanation.
Fig. 6 is the flow chart for the manufacture method for showing the semiconductor device according to disclosure one embodiment.Fig. 7 A to 7G
It is the schematic sectional view for showing semiconductor device corresponding with the part steps of the method shown in Fig. 6.Below in conjunction with Fig. 6 and
Fig. 7 A-7G are illustrated.Above the explanation with regard to the part in Fig. 1-3H and corresponding steps or technique go for Fig. 4 and
Same or analogous part, step or technique is described below, therefore is omitted here to its repeat specification.
As shown in fig. 6, manufacture method 600 include substrate 602 is provided, groove 604 is formed, forms cushion 606
Step and the corresponding steps in the manufacture method 200 shown in Fig. 2 are same or like, therefore thereof will be omitted it is described in detail.
After step 606, the essentially identical configuration shown in Fig. 3 C can be obtained.As shown in Figure 7 A, the structure
It can include：Substrate 501, it can include groove 520 and the transmission area 530 separated by the groove 520；And serving as a contrast
Cushion 502 on bottom 501.Thus following explanation structure will start (but label will be otherwise varied).
In step 608, radiation regulating course 503 is formed on cushion 504 (see Fig. 7 D).
As an example, in the present embodiment, as shown in figures 7 a-7d, radiation regulating course 503 can be by following several
Sub-steps are formed.First, in step 610, as shown in Figure 7 A, in cushion 502, (it is included in the portion in groove and outside groove
Point) on form intermediate layer of material 507.Intermediate layer of material 107 can be formed by the material for reflecting or absorbing radiation.For example, can be with
Intermediate wood is formed by ald, the vapour deposition of metallo-organic compound thing, sputtering technology or other suitable technologies
The bed of material 507.Likewise, intermediate layer of material 507 is also included within the part with groove outer (on transmission area) in groove.
Then, in step 612, intermediate layer 505 is formed on intermediate layer of material 507.The preferably basic covering in intermediate layer 505
The part (surface in other words, covering the part) in the trench of the intermediate layer of material, and make the intermediate materials
Expose part of the layer on the transmission area.In one embodiment, shape can be carried out for example, by depositing on cushion 502
Into intermediate layer 505, as shown in Figure 7 B.Intermediate layer 505 can be with the surface of structure shown in coverage diagram 7A, and fills groove 530.
It is alternatively possible to handle intermediate layer 505, as seen in figure 7 c, with cause the intermediate layer of material in institute
It is covered (in other words, the surface of the part is capped) to state the part in groove, and makes the intermediate layer of material in the transmission
Expose part on area.In some implementations, the not phase in intermediate layer 505 can be removed using techniques such as dry etchings
The part of prestige, so that part of the intermediate layer of material on the transmission area is exposed.It should be understood that the technique for the processing
This is not limited to, such as the processing can also be carried out for example, by chemically-mechanicapolish polishing techniques such as (CMP).
Alternatively, it is also possible to by the similar patterning of such as Fig. 4 B mask, come cause the intermediate layer of material described
Part in groove is covered, and exposes part of the intermediate layer of material on the transmission area.Here, intermediate layer
Remainder (that is, the part for filling groove) is still indicated with 505.
The intermediate layer of material 507 that the intermediate layer 505 so formed can be formed in groove is isolated with around, from
And can prevent in subsequent step, the intermediate layer of material 507 formed in groove 520 undergoes undesirable processing so that its
From the influence of subsequent treatment.On the other hand, intermediate layer 505 can function as packing material, it is possible to reduce subsequent process steps,
Subsequent technique difficulty is reduced, so as to reduce cost, improves production efficiency.
Afterwards, in step 614, the part exposed of intermediate layer of material 507 is handled so that it is modified, such as aoxidizes
Or nitrogen treatment etc., as illustrated in fig. 7d, to cause the part (part outside groove 520) exposed in intermediate layer of material 507
Become transmission, to form the Part II 506 for radiating regulating course 503.Intermediate layer of material 507 is protected by intermediate layer 505
Partly (part such as in groove 520) keeps reflection or absorbs radiation, so as to the Part I 504 as radiation regulating course 503.
In this way, complete radiation regulating course 503.
Afterwards, in step 616, formed on the radiation regulating course 503 including the part 506 of Part I 504 and two
Portion's coating 511, as shown in Fig. 7 E-7G.The step is similar with the corresponding steps in manufacture method 200, and difference is
Each layer in the upper cover layer 511 that is formed caused by retaining intermediate layer 505 be respectively formed on intermediate layer 505 or on
Side, so as to substantially on groove 520.It can be equally applicable to above in conjunction with the content described by Fig. 2, Fig. 3 A-3K and Fig. 4
This, therefore its detailed description is omitted here.
It should be appreciated by those skilled in the art that the border between aforesaid operations is merely illustrative.Multiple operations
Single operation can be combined into, single operation can be distributed in additional operation, and operate can at least portion in time
Divide and overlappingly perform.Moreover, alternative embodiment can include multiple examples of specific operation, and in other various embodiments
In can change operation order.But others are changed, variations and alternatives are equally possible.Therefore, the specification and drawings
It should be counted as illustrative and not restrictive.
Although some specific embodiments of the disclosure are described in detail by example, the skill of this area
Art personnel it should be understood that above example merely to illustrate, rather than in order to limit the scope of the present disclosure.It is disclosed herein
Each embodiment can in any combination, without departing from spirit and scope of the present disclosure.It is to be appreciated by one skilled in the art that can be with
A variety of modifications are carried out to embodiment without departing from the scope of the present disclosure and spirit.The scope of the present disclosure is limited by appended claims
It is fixed.
Claims (10)
- A kind of 1. semiconductor device, it is characterised in that including：Substrate, including groove and the transmission area opened by the trench separation；Cushion, formed in the substrate and cover the surface of the groove and the transmission area；AndRegulating course is radiated, is formed on the cushion, the radiation regulating course is included in described in the groove Part I on cushion and the Part II on the cushion on the transmission area, described A part is formed by radiant reflective material or radiation-absorbing material, and the Part II is formed by radiation transmissive material.
- 2. semiconductor device according to claim 1, it is characterised in that wherein：The Part I is formed by the high dielectric constant material of metal phase, andThe Part II is formed by the high dielectric constant material of medium phase.
- 3. semiconductor device according to claim 2, it is characterised in that the high dielectric constant material of wherein described medium phase It is identical with the high dielectric constant material constitution element of the metal phase, but the stoicheiometry of constitution element is different.
- 4. semiconductor device according to claim 1, it is characterised in that wherein, the substrate includes being used to sense radiation Radiation sensitive unit, the transmission area is corresponding with the radiation sensitive unit.
- 5. semiconductor device according to claim 4, it is characterised in that wherein, in a top view, the transmission area and institute It is least partially overlapped to state radiation sensitive unit.
- 6. semiconductor device according to claim 4, it is characterised in that the semiconductor device is back side illumination image sensing Device,Wherein described radiation sensitive unit is formed to close on the front of the substrate, and the groove and the transmission area are located at institute The back side of substrate is stated, the cushion is formed on the back side of the substrate.
- 7. semiconductor device according to claim 1, it is characterised in that also include：Upper cover layer, the upper cover layer comprise at least antireflection material layer, and the upper cover layer is at least in the spoke Penetrate on regulating course.
- 8. according to the semiconductor device any one of claim 1-7, it is characterised in that the depth-to-width ratio of the groove is 5: 1 or bigger.
- A kind of 9. method for manufacturing semiconductor device, it is characterised in that comprise the following steps：Substrate is provided, the substrate includes groove and the transmission area opened by the trench separation；Cushion is formed in the substrate, the cushion covers the surface of the groove and the transmission area；AndRadiation regulating course is formed on the cushion, the radiation regulating course is included in described slow in the groove Rush the Part I on layer and the Part II on the cushion on the transmission area, described first Part is formed by radiant reflective material or radiation-absorbing material, and the Part II is formed by radiation transmissive material.
- 10. according to the method for claim 9, it is characterised in that wherein：The Part I is formed by the high dielectric constant material of metal phase,The Part II is formed by the high dielectric constant material of medium phase.
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| CN113838876A (en) * | 2020-10-19 | 2021-12-24 | 台湾积体电路制造股份有限公司 | Image sensor and method for forming the same |
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| US20150243697A1 (en) * | 2014-02-27 | 2015-08-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor device and method for forming the same |
| CN106486506A (en) * | 2015-08-27 | 2017-03-08 | 台湾积体电路制造股份有限公司 | Deep trench isolation structure and forming method thereof |
| CN106856201A (en) * | 2015-12-09 | 2017-06-16 | 三星电子株式会社 | Imageing sensor, its manufacture method and the system including the imageing sensor |
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| CN104681573A (en) * | 2013-11-29 | 2015-06-03 | 索尼公司 | Solid-state imaging element, manufacturing method, and electronic device |
| US20150243697A1 (en) * | 2014-02-27 | 2015-08-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor device and method for forming the same |
| CN106486506A (en) * | 2015-08-27 | 2017-03-08 | 台湾积体电路制造股份有限公司 | Deep trench isolation structure and forming method thereof |
| CN106856201A (en) * | 2015-12-09 | 2017-06-16 | 三星电子株式会社 | Imageing sensor, its manufacture method and the system including the imageing sensor |
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