CN109585485A - Semiconductor device and preparation method thereof - Google Patents
Semiconductor device and preparation method thereof Download PDFInfo
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- CN109585485A CN109585485A CN201811538637.0A CN201811538637A CN109585485A CN 109585485 A CN109585485 A CN 109585485A CN 201811538637 A CN201811538637 A CN 201811538637A CN 109585485 A CN109585485 A CN 109585485A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 101
- 238000002360 preparation method Methods 0.000 title description 4
- 230000031700 light absorption Effects 0.000 claims abstract description 66
- 239000000463 material Substances 0.000 claims description 64
- 239000000758 substrate Substances 0.000 claims description 33
- 239000011358 absorbing material Substances 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 239000007769 metal material Substances 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
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- 229910052710 silicon Inorganic materials 0.000 description 8
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 6
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- 239000002184 metal Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 2
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
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- 238000012546 transfer Methods 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- 229910052733 gallium Inorganic materials 0.000 description 1
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- 238000010348 incorporation Methods 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
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- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
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- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14629—Reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/1469—Assemblies, i.e. hybrid integration
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
This disclosure relates to a kind of semiconductor device, array and grid including light-sensitive element, grid arrangement respectively define the opening for receiving light on the array of light-sensitive element, and to each light-sensitive element, wherein, grid includes light absorption part and the photo-emission part point in light absorption upper.Present disclosure also relates to a kind of production methods of semiconductor device.
Description
Technical field
This disclosure relates to semiconductor field, it particularly relates to a kind of semiconductor device and preparation method thereof.
Background technique
Imaging sensor can be used for sensing radiation (for example, light radiation, including but being confined to visible light, infrared ray, ultraviolet light
Deng), to generate corresponding electric signal.It specifically, include multiple pixels on imaging sensor, each pixels sense image
The intensity of light in a certain region, and the intensity of light that each pixel is sensed is combined to obtain image.Therefore,
Wish that incident light is avoided to escape between adjacent pixel so as to cause crosstalk as far as possible, while also wanting to increase as far as possible each
The utilization rate for the incident light that pixel receives, to increase the number for the photo-generated carrier that each pixel generates and increase QE and letter
It makes an uproar ratio.
Summary of the invention
One purpose of the disclosure is to provide a kind of crosstalk that can be reduced between pixel and the utilization rate for increasing incident light
Technology.
According to the disclosure in a first aspect, provide a kind of semiconductor device, the array including light-sensitive element；And grid,
It is arranged on the array of light-sensitive element, and respectively defines the opening for receiving light to each light-sensitive element, wherein institute
Stating grid includes light absorption part and the photo-emission part point in light absorption upper.
According to the second aspect of the disclosure, a kind of method for making semiconductor device is provided, characterized by comprising:
The array of light-sensitive element is formed in semiconductor substrate；Grid is formed on the array of the light-sensitive element, the grid is to each
Light-sensitive element respectively defines the opening for receiving light, wherein the grid includes light absorption part and in light absorption part
The photo-emission part of top point.
By the detailed description referring to the drawings to the exemplary embodiment of the disclosure, the other feature of the disclosure and its
Advantage will become apparent.
Detailed description of the invention
The attached drawing for constituting part of specification describes embodiment of the disclosure, and together with the description for solving
Release the principle of the disclosure.
The disclosure can be more clearly understood according to following detailed description referring to attached drawing, in which:
Fig. 1 is the diagram for schematically showing the structure of semiconductor device according to an embodiment of the present disclosure.
Fig. 2 is the diagram for schematically showing the size of semiconductor device according to an embodiment of the present disclosure.
Fig. 3 is the flow chart for schematically showing the manufacturing method of semiconductor device according to an embodiment of the present disclosure.
Fig. 4 A to Fig. 4 C is cutting for semiconductor device when showing each step for making semiconductor device shown in FIG. 1
The exemplary schematic diagram in face.
Fig. 5 is the diagram for schematically showing the structure of another semiconductor device according to an embodiment of the present disclosure.
Note that same appended drawing reference is used in conjunction between different attached drawings sometimes in embodiment explained below
It indicates same section or part with the same function, and omits its repeated explanation.In the present specification, using similar label
Indicate therefore similar terms once being defined in a certain Xiang Yi attached drawing, then do not need in subsequent attached drawing to it with letter
It is further discussed.
In order to make it easy to understand, position, size and range of each structure shown in attached drawing etc. etc. do not indicate practical sometimes
Position, size and range etc..Therefore, disclosed invention is not limited to position, size and range disclosed in attached drawing etc. etc..
Specific embodiment
The various exemplary embodiments of the disclosure are described in detail now with reference to attached drawing.It should also be noted that unless in addition having
Body explanation, the unlimited system of component and the positioned opposite of step, numerical expression and the numerical value otherwise illustrated in these embodiments is originally
Scope of disclosure.
Be to the description only actually of at least one exemplary embodiment below it is illustrative, never as to the disclosure
And its application or any restrictions used.
Technology, method and apparatus known to person of ordinary skill in the relevant may be not discussed in detail, but suitable
In the case of, the technology, method and apparatus should be considered as authorizing part of specification.
It is shown here and discuss all examples in, any occurrence should be construed as merely illustratively, without
It is as limitation.Therefore, the other examples of exemplary embodiment can have different values.
As shown in Figure 1, the diagram of its structure for schematically showing semiconductor device according to an embodiment of the present disclosure.Such as
Shown in Fig. 1, according to the semiconductor device 10 of the embodiment of the disclosure include semiconductor substrate 101, be formed in semiconductor substrate
The array of light-sensitive element 102 in 101 and the grid 104 being formed on substrate 101 and light-sensitive element 102.Substrate 101 can be by
Unitary semiconductor material (such as, silicon or germanium etc.) or compound semiconductor materials (such as silicon carbide, SiGe, GaAs, phosphatization
Gallium, indium phosphide, indium arsenide and/or indium antimonide) or combinations thereof constitute.The substrate of semiconductor device according to an embodiment of the present disclosure
In can form the light-sensitive element 102 for sensing light, therefore, which can be configured as imaging sensor, and
Each light-sensitive element 102 corresponds to a pixel of imaging sensor.Grid 104 limits each light-sensitive element 102 respectively
For receiving the opening of light.Between semiconductor substrate 101 and grid 104, also there is middle layer 103.The work of middle layer 103
With including protecting light-sensitive element and reducing or preventing the reflection on the surface of semiconductor substrate 101.The material of middle layer 103 can
To include the oxide of various high K mediums, silicon, the nitride of silicon, the nitrogen oxides of silicon, the oxynitride of silicon, transparent metal oxygen
One or more of compound (for example, titanium oxide TaO).In addition, optional optical material 105 can be filled in the opening
In.For example, optical material 105 may include filter (for example, various dyestuffs, pigment, pigment), for entrance opening
Light is filtered, to extract filtered wavelength.In general, the filter in adjacent pixel can correspond respectively to
Such as R, G, B three-primary colours, to form colored imaging sensor 10.In addition, optical material 105 can also include dielectric material
Material, is protected etc. for being filled to opening, to light-sensitive element 102 and grid 104 etc..In addition, optical material 105 may be used also
To be it may occur to persons skilled in the art that any optical material.In addition, above optical material 105, semiconductor device 10
It can also include optional lenticule 106, for being assembled and being collimated to incident light.
As shown in Figure 1, grid 104 includes light absorption part in semiconductor device 10 according to an embodiment of the present disclosure
1041 and light absorption upper photo-emission part points 1042.It light absorption part 1041 can be by light absorption incident thereon
Fall, photo-emission part point 1042 can reflect light incident thereon.Light absorption part 1041 and photo-emission part point 1042 can
Prevent the light of opening into a pixel from passing through and reaching in the opening of adjacent pixel, thus reinforce each pixel with
Adjacent pixel is optically isolated, and reduces the crosstalk between adjacent pixel.
In addition, may have the 107 (example of gap that light may pass through from it between semiconductor substrate 101 and grid 104
Such as, the gap generated due to the thickness of middle layer 104), and the light for passing through gap can enter adjacent pixel and cause to go here and there
It disturbs.Since light absorption part 1041 can prevent light incident thereon from reflecting to semiconductor substrate 101 and pass through gap, institute
The crosstalk between pixel can be further decreased.Meanwhile the photo-emission part above light absorption part 1041 points 1042 can be with
Light incident thereon is reflected, light through reflection can reach the light-sensitive element 102 in substrate 101, connect to increase pixel
The utilization rate of the incident light received, and increase the number for the photo-generated carrier that each pixel generates and increase QE and signal-to-noise ratio.
Further, since photo-emission part points 1042 is light absorption part 1041 above, therefore photo-emission part divides 1042 and substrate
The point on 1042 is divided in gap relative to photo-emission part to 101 distance farther out and between semiconductor substrate 101 and grid 104
Projected area is smaller, so more difficult into the gap by the light of 1042 reflection of photo-emission part point.Even if by photo-emission part point
1042 reflection light enter the gap, since the direction of the light is larger relative to the angle of substrate 101, thus be more difficult to from
Gap passes through.In addition, because the two sides in the gap are the light absorption part 1041 of semiconductor substrate 101 and grid 104 respectively,
So the light into gap can also be absorbed by light absorption part 1041, so that adjacent pixel can not be reached.Therefore, although light is anti-
Reflected light can be generated by penetrating part 1042, but these reflected lights will not increase the crosstalk between pixel significantly.
In addition, since light absorption part 1041 is below photo-emission part point 1042, light absorption part 1041 and substrate
101 are closer, so the intensity for the incident light being incident on light absorption part 1041 is lower.Therefore, although light absorption department
1041 are divided to absorb a part of incident light, but this will not reduce the utilization rate of incident light significantly.
In addition, as will be understood by the skilled person in the art, in the crosstalk for reducing pixel and the utilization rate for increasing incident light
Between there is compromise, and those skilled in the art can determine light absorption part with design requirement etc. according to actual needs
Relationship between 1041 and photo-emission part point 1042.
Next the relationship between the width to the size of grid 104, the opening of grid 104 and the height in gap 107 into
Row discusses.Fig. 2 is the diagram for schematically showing the size of semiconductor device according to an embodiment of the present disclosure.As shown in Fig. 2,
The height of the light absorption part 1041 of grid 104 is H1, and the height of the photo-emission part point 1042 of grid 104 is H2, grid 104
Width be D1, the width of the opening of grid 104 is D2 and the height in gap 107 is (that is, grid 104 and light-sensitive element 102
The distance between array) it is D3.Assuming that the overall height H 1+H2 of grid 104 is determined according to the design of imaging sensor 10
And not with the width D 1 of grid 104, the width D 2 of the opening of grid 104 and gap 107 height D3 and change.In root
According in embodiment of the disclosure, the height H1 and photo-emission part of the light absorption part 1041 in grid 104 divide 1042 height H2
The ratio between accordingly adjusted according to the width D 1 of grid 104, the width D 2 of the opening of grid 104 and the height D3 in gap 107.Citing
For, when the width D 1 of grid 104 increases, the length in gap 107 also correspondingly increases, therefore anti-by photo-emission part point 1042
The light penetrated is more difficult to reach adjacent pixel across gap 107.At this point, the height H1 of light absorption part 1041 can correspondingly subtract
It is small.Therefore, as the width D 1 of grid 104 increases, the height H1 and photo-emission part of light absorption part 1041 divide 1042 height
The ratio between H2 is spent to reduce.In addition, the light by 1042 reflection of photo-emission part point is less when the width D 2 of the opening of grid 104 increases
Ground reaches the gap 107 under the grid 104 of opposite side.At this point, the height H1 of light absorption part 1041 can be correspondingly reduced.Cause
This, the width D 2 with the opening of grid 104 increases, and the height H1 and photo-emission part of light absorption part 1041 divide 1042 height
The ratio between H2 is spent to reduce.In addition, being easier to enter by the light of 1042 reflection of photo-emission part point when the height D3 in gap 107 increases
In gap 107.At this point, the height H1 of light absorption part 1041 can correspondingly increase.Therefore, with the height D3 in gap 107
Increase, the height H1 and photo-emission part of light absorption part 1041 divide the ratio between 1042 height H2 to increase.
It will be understood by those skilled in the art that the height H1 and photo-emission part of light absorption part 1041 divide 1042 height H2
Specific value can determine according to actual needs, it is not illustrated in the disclosure.In addition, art technology
Personnel are it is also contemplated that the height H1 and photo-emission part of light absorption part 1041 divide 1042 the ratio between height H2 can be by multiple ginsengs
Number codetermines, and those skilled in the art can determine H1 and H2 according to the above teaching of the disclosure to be directed to actual conditions
The ratio between.
It is made as shown in Figure 1, light absorption part 1041 is whole of light absorbing material.The example of light absorbing material includes narrowband
One or more of gap semiconductor material, carbon and TiN.It is less than the semiconductor material of photon energy for forbidden bandwidth, it is incident
Photon can by excitation valence-band electrons to conduction band transfer be absorbed.For example, the wave-length coverage of visible light be 400nm~
700nm, corresponding photon energy are respectively 3.1eV~1.8eV.It is less than the semiconductor material of 1.8eV for forbidden bandwidth, almost
All visible lights can be all absorbed by excitation valence-band electrons to conduction band transfer.Typically, in some embodiments, light is formed
The example for absorbing the narrow bandgap semiconductor material of part 1041 can include but is not limited to one of the following or a variety of: germanium, germanium
Silicon or GaAs.In some embodiments, light absorption part 1041 can be formed by carbon coating.Typically, in some embodiments
In, the main component of the carbon coating of light absorption part 1041 is the polymer of high-carbon content.
In addition, as shown in Figure 1,1042 entirety of photo-emission part point is made of light reflecting material.The example packet of light reflecting material
Include one or more of metal material, silica, silicon nitride.The example of metal material includes tungsten, titanium, aluminium, one in copper
It is a or multiple.
It will be understood by those skilled in the art that various light absorbing materials and light reflecting material can be used in the disclosure,
As long as their manufacture craft and characteristic are suitable for incorporation into semiconductor devices.
Fig. 3 is the exemplary flow for schematically showing the manufacturing method of semiconductor device according to an embodiment of the present disclosure
Figure.As shown in figure 3, forming the array of light-sensitive element in the semiconductor substrate in step S301.The step includes in this field
Known various technologies form each light-sensitive element in the semiconductor substrate and formed corresponding conducting wiring, dielectric layer,
Shallow trench isolation portion etc., and for clarity, the specific descriptions to the step are omitted in the disclosure.
Later, in step S302, grid is formed on the array of light-sensitive element in the semiconductor substrate, the grid is to each
Light-sensitive element respectively defines the opening for receiving light.Wherein, as introduced above, being formed by grid includes light absorption
Partially and in the photo-emission part of light absorption upper divide.As long as it will be understood by those skilled in the art that can finally obtain
Lattice structure is stated, any technology and technique may be used in embodiment of the disclosure, and form the specific of lattice structure
Step can be adjusted accordingly according to used technology and technique.
In addition, in each embodiment of the disclosure, according to the overall structure for being formed by grid and semiconductor device and
The difference of material is used to form the specific steps different from of grid.The step of grid is hereinafter formed according to various embodiments
Suddenly it is specifically described.
In addition, after the step of forming grid, described above, optionally further comprising forming optical material and micro-
The step of mirror etc..
Fig. 4 A to Fig. 4 C is semiconductor device when showing each step for making semiconductor device 10 shown in FIG. 1
The exemplary schematic diagram in section.
Firstly, as shown in Figure 4 A, formed in semiconductor substrate 401 (such as handled by deposition processes, injection etc.) light
The array of quick element 402.The technology for forming light-sensitive element in the semiconductor substrate is known to the skilled in the art, therefore
Here descriptions thereof is omitted.Later, same as shown in Figure 4 A, middle layer 403 is formed in semiconductor substrate 401.
Later, start the step of forming grid in semiconductor substrate 401.As shown in Figure 4 B, in semiconductor substrate 401
Successively form layer of light absorbing material 4043 and light reflecting material layer 4044.The layer of light absorbing material 4043 can be by light absorption material
Material is made, and light reflecting material layer 4044 can be made of light reflecting material.It can adopt using known in the art any suitable
Technique form layer of light absorbing material 4043 and light reflecting material layer 4044, including but not limited to: physical vapour deposition (PVD)
(PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD), spraying plating, spin coating or combinations thereof etc..
Later, as shown in Figure 4 C, patterned process is carried out to layer of light absorbing material 4043 and light reflecting material layer 4044,
To remove the part of layer of light absorbing material 4043 and light reflecting material layer 4044 above light-sensitive element 402, to form light suction
Receiving portions 4041 and photo-emission part point 4042.Light absorption part 4041 and photo-emission part point 4042 constitute grid 404 and limit
Each light-sensitive element 402 has been determined for receiving the opening of light.Can using any suitable engraving method known in the art come
Patterned process is completed, including but not limited to utilizes patterned mask (for example, photoresist or hard mask).At this
In any of suitable etch process, wet etching, dry etching (such as plasma etching) can be used.
After the step shown in Fig. 4 C, dielectric layer can also be formed (for example, SiO2) separation layer the step of, shape
At the step of optical material and the step of forming lenticule etc..In order to clear with simply, these steps are omitted herein.
By the way that in conjunction with the description of attached drawing 4A to Fig. 4 C, the available production of those skilled in the art is according to the disclosure above
The method of the semiconductor device as shown in Figure 1 of embodiment.
It is worth noting that, the boundary between each step of production semiconductor device above is merely illustrative.
In actual operation, in any combination, or even single step can be synthesized between each step.In addition, the execution of each step is suitable
Sequence is not limited by description order, and part steps can be omitted.For example, it will be understood by those skilled in the art that above
The sequence for the step of formation light absorption part of description and photo-emission part divide can change, and finally can also obtain Fig. 1 institute
The semiconductor device 10 shown.For example, layer of light absorbing material 4043 can be initially formed and be patterned to form light absorption
Part 4041 re-forms light reflecting material layer 4044 later and is patterned to form photo-emission part point 4042.This
Outside, it can also be initially formed layer of light absorbing material 4043 and light reflecting material layer 4044, light reflecting material layer 4044 is carried out later
Patterning finally recycles photo-emission part point 4042 as mask layer to layer of light absorbing material to form photo-emission part point 4042
4043 are etched to form light absorption part 4041.
Fig. 5 is the diagram for schematically showing the structure of another semiconductor device 50 according to an embodiment of the present disclosure.
Similar with semiconductor device 10 shown in Fig. 1, semiconductor device 50 includes semiconductor substrate 501, the battle array of light-sensitive element 502
Column, middle layer 503 and grid 504, omit detailed description thereof herein.In addition, with semiconductor device shown in Fig. 1
10 is similar, and semiconductor device 50 can also include optical material 505 and lenticule 506, omits retouching in detail to them herein
It states.Grid 504 includes light absorption part 5041 and the photo-emission part point 5042 in light absorption upper.As shown in figure 5, half
In conductor device 50, light absorption part 5041 includes main part 5043 and the light absorbing material positioned at 5043 side of main part
Layer 5044, and the photo-emission part point 5042 includes main part 5045 and the light reflecting material positioned at 5045 side of main part
The bed of material 5046.The thickness of layer of light absorbing material 5044 is enough fully to absorb light incident thereon and light reflecting material layer 5046
Thickness be enough fully to reflect light incident thereon.
Other than the step similar with production process shown in Fig. 4 A to Fig. 4 C, the production process of semiconductor device 50
It further include the main part 5043 to form layer of light absorbing material 5044 and the layer of light absorbing material for being covered on main part surface
5044 the step of and the main part 5045 of photo-emission part points 5042 is formed above light absorption part 5041 and is covered on main body
The step of light reflecting material layer 5046 on 5045 surface of part.Each includes the steps that material deposition and patterned step
Suddenly.These steps be to those skilled in the art it is familiar, be no longer described in detail herein.
In this embodiment, by replacing the interior section of light absorption part and photo-emission part point, example with main part
Such as in the case where the material of main part is more cheap, it is possible to reduce the amount of layer of light absorbing material and light reflecting material layer, from
And reduce the cost of device.It is made in addition, the material more easily fabricated can be used in main part, to reduce device
Manufacture difficulty.It is made in addition, the higher material of intensity can be used in main part, to increase the intensity of grid.In addition, light
The main part 5045 of the main part 5043 and photo-emission part point 5042 that absorb part 5041 can be manufactured from the same material,
And it can be formed together in the same step, it is possible thereby to the step of reduction method, simplified manufacture craft, raising production speed
Degree etc..In embodiment of the disclosure, main part can be made of electrolyte, and example includes but is not limited to:
High-k dielectric, metal oxide, the oxide of silicon, the nitride of silicon, the nitrogen oxides of silicon or oxynitride, silicon carbide, other
Oxide material and nitride material etc..
It will be understood by those skilled in the art that the structure of semiconductor device shown in Fig. 1 can be with shown in Fig. 5 half
The structure of conductor device combines.For example, one in light absorption part 1041 and photo-emission part in Fig. 1 points 1042 can be by
5042 replacement of light absorption part 5041 and photo-emission part shown in Fig. 5 point, obtained semiconductor device equally can be realized
The technical effect of the disclosure.
In embodiment of the disclosure, semiconductor device can use various image sensor technologies, for example, CMOS, CCD
Deng.In addition, semiconductor device can use (FSI) image sensor technologies front-illuminated or back-illuminated type in embodiment of the disclosure
(BSI) image sensor technologies.(FSI) imaging sensor front-illuminated refers to powering on road wiring etc. photosensitive in incident light direction
The imaging sensor in the front of element, that is, wiring etc. is between light-sensitive element and imaging object.Unlike this, back-illuminated type
(BSI) imaging sensor refers to powering on road wiring etc. in the imaging sensor at the rear of light-sensitive element in incident light direction, that is,
Light-sensitive element is in wiring etc. between imaging object.That is, being different from imaging sensor front-illuminated, in back-illuminated type figure
As in sensor, wiring etc. may influence to radiate received component generally within the front of substrate, and light is from the back side of substrate
Incidence enters.
Therefore, although being not shown in the figure, back side illumination image is utilized in the semiconductor device of embodiment of the disclosure
When sensor technology, in figure the lower section of light-sensitive element or with light-sensitive element within the same layer, also have conducting wiring portion.Separately
Outside, although being not shown in the figure, image sensor technologies front-illuminated are utilized in the semiconductor device of embodiment of the disclosure
When, the top of light-sensitive element in figure also has conducting wiring portion.The conducting wiring portion is by one or more layers conductive material layer
Composition, conductive material can be selected from for example: metal, metal alloy, conduction metallic compound.The example of metal includes titanium, tungsten
Or aluminium etc..
Back side illumination image sensor technology and image sensing front-illuminated are utilized in the semiconductor device of embodiment of the disclosure
When device technology, the technical effect of the crosstalk reduced between pixel and the utilization rate for improving incident light can be realized.But it compares
For imaging sensor front-illuminated, reduces the crosstalk between pixel and improve the utilization rate of incident light for back side illumination image biography
Sensor is that more importantly, therefore, semiconductor device according to an embodiment of the present disclosure is being applied to back side illumination image sensor
When technology, compared with the prior art in back side illumination image sensor can generate more significant advantage.
Although being retouched by taking one or two pixel (light-sensitive element) placed side by side as an example in the attached drawing of the disclosure
It states and illustrates, but those skilled in the art can understand, the pixel array (light-sensitive element in the semiconductor devices of the disclosure
Array) expansion can be arranged on the in-plane of substrate.That is, the part of the semiconductor device shown in the accompanying drawings of the disclosure
It can repeat to arrange on the in-plane of substrate, obtain the pixel of predetermined number.
In the word "front", "rear" in specification and claim, "top", "bottom", " on ", " under " etc., if deposited
If, it is not necessarily used to describe constant relative position for descriptive purposes.It should be appreciated that the word used in this way
Language be in appropriate circumstances it is interchangeable so that embodiment of the disclosure described herein, for example, can in this institute
It is operated in those of description show or other other different orientations of orientation.
As used in this, word " example " means " be used as example, example or explanation ", not as will be accurate
" model " of duplication.It is not necessarily to be interpreted in any implementation of this exemplary description more preferred than other implementations
Or it is advantageous.Moreover, the disclosure is not by given in above-mentioned technical field, background technique, summary of the invention or specific embodiment
Theory that is any stated or being implied out is limited.
As used in this, word " substantially " means comprising the appearance by the defect, device or the element that design or manufacture
Any small variation caused by difference, environment influence and/or other factors.Word " substantially " also allows by ghost effect, makes an uproar
Caused by sound and the other practical Considerations being likely to be present in actual implementation with perfect or ideal situation
Between difference.
Foregoing description can indicate to be " connected " or " coupled " element together or node or feature.As used herein
, unless explicitly stated otherwise, " connection " means an element/node/feature and another element/node/feature in electricity
Above, it is directly connected (or direct communication) mechanically, in logic or in other ways.Similarly, unless explicitly stated otherwise,
" coupling " mean an element/node/feature can with another element/node/feature in a manner of direct or be indirect in machine
On tool, electrically, in logic or in other ways link to allow to interact, even if the two features may not direct
Connection is also such.That is, " coupling " is intended to encompass the direct connection and connection, including benefit indirectly of element or other feature
With the connection of one or more intermediary elements.
In addition, middle certain term of use can also be described below, and thus not anticipate just to the purpose of reference
Figure limits.For example, unless clearly indicated by the context, be otherwise related to the word " first " of structure or element, " second " and it is other this
Class number word does not imply order or sequence.
It should also be understood that one word of "comprises/comprising" as used herein, illustrates that there are pointed feature, entirety, steps
Suddenly, operation, unit and/or component, but it is not excluded that in the presence of or increase one or more of the other feature, entirety, step, behaviour
Work, unit and/or component and/or their combination.
In the disclosure, therefore term " offer " " it is right to provide certain from broadly by covering all modes for obtaining object
As " including but not limited to " purchase ", " preparation/manufacture ", " arrangement/setting ", " installation/assembly ", and/or " order " object etc..
It should be appreciated by those skilled in the art that the boundary between aforesaid operations is merely illustrative.Multiple operations
It can be combined into single operation, single operation can be distributed in additional operation, and operating can at least portion in time
Divide and overlappingly executes.Moreover, alternative embodiment may include multiple examples of specific operation, and in other various embodiments
In can change operation order.But others are modified, variations and alternatives are equally possible.Therefore, the specification and drawings
It should be counted as illustrative and not restrictive.
In addition, embodiment of the disclosure can also include following example
1. a kind of semiconductor device, characterized by comprising:
The array of light-sensitive element；With
Grid is arranged on the array of light-sensitive element, and respectively defines each light-sensitive element for receiving light
Opening,
Wherein, the grid includes light absorption part and the photo-emission part point in light absorption upper.
2. according to semiconductor device described in project 1, which is characterized in that the light absorption part is by light absorbing material system
At.
3. according to semiconductor device described in project 1, which is characterized in that the light absorption department point includes main part and covers
Cover the layer of light absorbing material on main part surface.
4. the semiconductor device according to any one of project 2-3, which is characterized in that the light absorbing material includes narrow
One or more of bandgap semiconductor material, carbon and TiN.
5. the semiconductor device according to any one of project 4, which is characterized in that narrow bandgap semiconductor material includes
One or more of germanium, germanium silicon or GaAs.
6. according to semiconductor device described in project 1, which is characterized in that the photo-emission part point is by light reflecting material system
At.
7. according to semiconductor device described in project 1, which is characterized in that the photo-emission part point includes main part and covers
Cover the light reflecting material layer on main part surface.
8. the semiconductor device according to any one of project 6-7, which is characterized in that light reflecting material includes metal material
One or more of material, silica, silicon nitride.
9. according to semiconductor device described in project 8, which is characterized in that metal material includes tungsten, titanium, aluminium, one in copper
It is a or multiple.
10. the semiconductor device according to any one of project 1-3 and 6-7, which is characterized in that the width of grid is got over
Greatly, the ratio between the height of light absorption part and the height of photo-emission part point are smaller.
11. the semiconductor device according to any one of project 1-3 and 6-7, which is characterized in that the width of opening is got over
Greatly, the ratio between the height of light absorption part and the height of photo-emission part point are smaller.
12. the semiconductor device according to any one of project 1-3 and 6-7, which is characterized in that grid and light-sensitive element
The distance between array it is bigger, the ratio between height of the height and photo-emission part of light absorption part point is bigger.
13. the semiconductor device according to any one of project 1-3 and 6-7, it is characterised in that further include being filled in institute
State the optical material in the opening of grid.
14. the semiconductor device according to any one of project 1-3 and 6-7, it is characterised in that further include being arranged in institute
State the array of the lenticule above grid.
15. a kind of method for making semiconductor device, characterized by comprising:
The array of light-sensitive element is formed in the semiconductor substrate；With
Grid is formed on the array of the light-sensitive element, which respectively defines for receiving each light-sensitive element
The opening of light,
Wherein, the grid includes light absorption part and the photo-emission part point in light absorption upper.
16. according to method described in project 15, which is characterized in that forming grid on the array of light-sensitive element includes:
Layer of light absorbing material is formed on the semiconductor substrate；
Light reflecting material layer is formed in the layer of light absorbing material；
Patterned process is carried out to the layer of light absorbing material, to remove the layer of light absorbing material in the light-sensitive element
The part of top；With
To the light reflecting material layer carry out patterned process, with remove the light reflecting material layer in the photosensitive member
Part above part.
17. according to method described in project 15, which is characterized in that forming grid on the array of light-sensitive element includes:
The main part of light absorption part and the light absorption positioned at main part side are formed on the semiconductor substrate
Material layer；And
The main part of photo-emission part point is formed in light absorption upper and positioned at the light reflecting material of main part side
The bed of material.
18. according to method described in project 15, it is characterised in that further comprising the steps of:
Optical material is filled in the opening of grid.
19. according to method described in project 15, it is characterised in that further comprising the steps of:
The array of lenticule is formed above the grid.
Although being described in detail by some specific embodiments of the example to the disclosure, the skill of this field
Art personnel it should be understood that above example merely to be illustrated, rather than in order to limit the scope of the present disclosure.It is disclosed herein
Each embodiment can in any combination, without departing from spirit and scope of the present disclosure.It is to be appreciated by one skilled in the art that can be with
A variety of modifications are carried out without departing from the scope and spirit of the disclosure to embodiment.The scope of the present disclosure is limited by appended claims
It is fixed.
Claims (10)
1. a kind of semiconductor device, characterized by comprising:
The array of light-sensitive element；With
Grid is arranged on the array of light-sensitive element, and is respectively defined to each light-sensitive element and opened for receiving light
Mouthful,
Wherein, the grid includes light absorption part and the photo-emission part point in light absorption upper.
2. semiconductor device according to claim 1, which is characterized in that the light absorption part is by light absorbing material system
At.
3. semiconductor device according to claim 1, which is characterized in that the light absorption department point includes main part and covers
Cover the layer of light absorbing material on main part surface.
4. the semiconductor device according to any one of claim 2-3, which is characterized in that the light absorbing material includes narrow
One or more of bandgap semiconductor material, carbon and TiN.
5. the semiconductor device according to any one of claim 4, which is characterized in that narrow bandgap semiconductor material includes
One or more of germanium, germanium silicon or GaAs.
6. semiconductor device according to claim 1, which is characterized in that the photo-emission part point is by light reflecting material system
At.
7. semiconductor device according to claim 1, which is characterized in that the photo-emission part point includes main part and covers
Cover the light reflecting material layer on main part surface.
8. the semiconductor device according to any one of claim 6-7, which is characterized in that light reflecting material includes metal material
One or more of material, silica, silicon nitride.
9. semiconductor device according to claim 8, which is characterized in that metal material includes tungsten, titanium, aluminium, one in copper
It is a or multiple.
10. a kind of method for making semiconductor device, characterized by comprising:
The array of light-sensitive element is formed in the semiconductor substrate；With
Grid is formed on the array of the light-sensitive element, which respectively defines for receiving light each light-sensitive element
Opening,
Wherein, the grid includes light absorption part and the photo-emission part point in light absorption upper.
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Application publication date: 20190405 |