CN107743039A

CN107743039A - A kind of GPRS acquisition terminals signal strength self-adapting data test and transmitting device

Info

Publication number: CN107743039A
Application number: CN201711151077.9A
Authority: CN
Inventors: 青志明; 傅望; 秦燕; 张宏艳; 胡军毅; 许晓艳; 刘克恒; 龙漪澜; 苟欣; 韩涛; 罗时武; 康成林; 谢焰; 贺娟
Original assignee: Technology & Skill Training Center Of Chongqing Electric Power Company State Grid; State Grid Corp of China SGCC
Current assignee: Technology & Skill Training Center Of Chongqing Electric Power Company State Grid; State Grid Corp of China SGCC
Priority date: 2017-11-18
Filing date: 2017-11-18
Publication date: 2018-02-27
Anticipated expiration: 2037-11-18
Also published as: CN107743039B

Abstract

A kind of GPRS acquisition terminals signal strength self-adapting data test and transmitting device, including up-link and downlink, MCU, downlink be sequentially connected descending preposition amplification, filter circuit, downstream attenuation circuit, descending power amplifying circuit, up-link be sequentially connected up preposition amplification, filter circuit, upstream attenuation circuit, ascending power amplifier；Descending preposition amplification, the output end of the input of filter circuit, ascending power amplifier are connected with the first RF switch, and up preposition amplification, the output end of the input of filter circuit, descending power amplifying circuit are connected with the second RF switch；It is provided with upper and lower row detecting circuit between MCU and upper and lower row power amplification circuit, MCU controls the attenuation size of upper and lower row attenuator circuit according to the power output of upper and lower row power amplification circuit, controls the power output size of upper and lower row power amplification circuit.It has automatic gain control function, can carry out bandwidth selection.

Description

A kind of GPRS acquisition terminals signal strength self-adapting data test and transmitting device

Technical field

The present invention relates to GPRS wireless data transmission technologys field, more particularly to a kind of GPRS acquisition terminals signal strength is certainly Adapt to data test and transmitting device.

Background technology

With the popularization that wireless communication technique is applied, increasing data communication is realized using wireless mode, wherein GPRS wireless data transmission technologys have become most commonly used application in power system of data acquisition application.All the time, What the developer of GPRS data transport module focused on is the error correcting capability and stability of signal link, in analog signal transmission part The work done is very few.

Summarized by long-term practical application, GPRS wireless data transfer modules are applied also in complex industrial environment at present The deficiency made up in the presence of some needs, is listed below respectively：GPRS terminals are due to installation environment, in fact it could happen that pickup electrode Strong or extremely weak situation：The transmission relay problem of wireless signal under basement or shielding environment；Signal quality from far-off regions is asked Topic；Nearby signal is too strong for base station, the problem of causing circuit to block.

For the above produced problem, applicant visualizes a set of overall solution, right in this set system The relay of shielding environment wireless signal and signal quality problem from far-off regions by it is a set of with gain control, bandwidth selection it is special Amplifier solves.

For the amplifier of GPRS signals, existing market has many products selling, what its principle was just as, and antenna is received To the signal that sends of signal and GPRS module carry out time-division processing, be amplified respectively, but this class A amplifier A have it is fatal Shortcoming, it is exactly that gain is fixed, pursuit power output simply, causes many areas the problem of interference base station normal work occur. Each wireless telecommunications system has the signal strength threshold of oneself in fact, less than this thresholding signal quality can be caused to decline letter Make an uproar than reducing.And can then cause preamplifier saturation higher than this thresholding, signal serious distortion produces obstruction, causes other to set Standby signal is blanked.

The content of the invention

The purpose of the present invention is the deficiency corresponding to prior art, there is provided a kind of GPRS acquisition terminals signal strength is adaptive Data test and transmitting device are answered, it is that one kind can be carried out adaptive GPRS wireless datas and passed under the conditions of the extreme power of signal Defeated circuit system, in this set system, to extremely strong or pole weak signal problem by a set of with gain control, bandwidth selection The special amplifiers of adaptive GPRS wireless data transmissions solves, and it has automatic gain control function, by output signal control System makes the signal intensity that base station receives in allowed limits in a rational scope, while and can is according to receiving letter Number intensity adjustment receiving terminal amplifier gain, make signal amplitude into GPRS module in optimal state, and the present invention Bandwidth selection can be carried out, cost is relatively low.

The purpose of the present invention is realized using following proposal：A kind of GPRS acquisition terminals signal strength self-adapting data is surveyed Examination and transmitting device, including up-link and downlink, in addition to MCU, the downlink be sequentially connected it is descending before Put big, filter circuit, downstream attenuation circuit, descending power amplifying circuit, the up-link be sequentially connected it is up before Put big, filter circuit, upstream attenuation circuit, ascending power amplifier；The descending preposition amplification, the input of filter circuit End, the output end of ascending power amplifier are connected with the first RF switch, the up preposition amplification, the input of filter circuit End, the output end of descending power amplifying circuit are connected with the second RF switch；Between MCU and the descending power amplifying circuit Provided with descending detecting circuit, the descending detecting circuit is used for the power output for detecting descending power amplifying circuit, and will detection To the power output of descending power amplifying circuit be converted to DC level and pass to MCU, the MCU is used to receive descending power The power output of amplifying circuit, and by the power output and setting value of descending power amplifying circuit（Or setting range）Compared Compared with output control signal gives downstream attenuation circuit, controls the attenuation size of downstream attenuation circuit（Attenuation amplitude）, so as to control The power output size of descending power amplifying circuit, the power output size of descending power amplifying circuit is set to be equal to setting value or about Equal to setting value；Up detecting circuit is provided between MCU and the ascending power amplifying circuit, the up detecting circuit is used for The power output of ascending power amplifying circuit is detected, and the power output of the ascending power amplifying circuit detected is converted to directly Stream level passes to MCU；The MCU is used for the power output for receiving ascending power amplifying circuit, and ascending power is amplified into electricity For the power output on road compared with setting value, output control signal gives upstream attenuation circuit, and control upstream attenuation circuit declines It is reduced size（Attenuation amplitude）, so as to control the power output size of ascending power amplifying circuit, make ascending power amplifying circuit Power output size be equal to setting value or be approximately equal to setting value.

The up preposition amplification, filter circuit are identical with the circuit structure of descending preposition amplification, filter circuit, under described The grid that the preposition amplification of row, filter circuit include high-gain HEMT amplifier elements U6, the high-gain HEMT amplifier elements U6 is used It is connected in the first RF switch, two source groundings of the high-gain HEMT amplifier elements U6, the high-gain HEMT Amplifier element U6 grid is connected with the 4th inductance L4 one end, the other end of the 4th inductance L4 respectively with the 43rd electric capacity C43, 24th resistance R24 one end connection, the 43rd electric capacity C43 other ends ground connection, the 43rd electric capacity C43 both ends are parallel with the 44th electricity The one end of appearance C44, the 24th resistance R24 other end respectively with the 21st resistance R21, the 25th resistance R25 is connected, and the described 25th Resistance R25 other end ground connection, the other end of the 21st resistance R21 respectively with the 14th resistance R14, the 15th resistance R15, the 28th Electric capacity C28 one end connection, the 28th electric capacity C28 other end ground connection, the other end of the 15th resistance R15 are connected with 5V power supplys (other end of the 15th resistance R15 is connected through the 7th inductance L7 with 5V power supplys), the other end of the 15th resistance R15 is through 29 electric capacity C29 are grounded, and the 29th electric capacity C29 both ends are parallel with the 30th electric capacity C30, the other end difference of the 14th resistance R14 It is connected with the 27th electric capacity C27, the 1st inductance L1 one end, the 27th electric capacity C27 other end ground connection, the 1st inductance L1 other end point One end of drain electrode, the 9th resistance R9 not with high-gain HEMT amplifier elements U6 is connected, the other end of the 9th resistance R9 and 17 electric capacity C17 one end connection, the 17th electric capacity C17 other end are connected with an attenuation network, and the output end of the attenuation network connects First order downstream filtering circuit is connected to, the output end of the first order downstream filtering circuit is used to be connected with downstream attenuation circuit, The first order downstream filtering circuit uses the first SAW filter F1.

The attenuation network uses the π type attenuation networks being made up of the 3rd resistance R3, the 10th resistance R10, the 4th resistance R4.π types The one end of the input of attenuation network respectively with the 3rd resistance R3, the 10th resistance R10 is connected, the 3rd resistance R3 other end ground connection, The output end with π type attenuation networks, the 4th resistance R4 one end are connected the 10th resistance R10 other end respectively, the 4th resistance R4 other end ground connection.

An amplification electricity is provided between the output end of the first order downstream filtering circuit and the input of downstream attenuation circuit Road, the amplifying circuit are included under model SBB5089 amplifier U3, SBB5089 amplifier U3 the 1st pin and the first order The output end connection of row filter circuit, SBB5089 amplifier U3 the 4th pin ground connection, the 3rd of SBB5089 amplifier U3 the Pin is connected with the input of downstream attenuation circuit, the amplifier U3 of the SBB5089 the 3rd pin and the one of the 2nd inductance L2 End connection, the one end of the 2nd inductance L2 other end respectively with the 31st electric capacity C31, the 16th resistance R16 are connected, the 31st electric capacity C31's The other end and SBB5089 amplifier U3 the 2nd pin connection, and be grounded, the 31st electric capacity C31 both ends are parallel with the 32nd electric capacity C32, the 16th resistance R16 other ends are connected with 5V power supplys, and the 16th resistance R16 other ends are connected through the 7th inductance L7 with 5V power supplys, the The 16 resistance R16 other ends are grounded through the 33rd electric capacity C33, and the both ends of the 33rd electric capacity C33 are parallel with the 34th electric capacity C34.First Amplifier U3 of the level downstream filtering circuit output end through the 18th electric capacity C18 and SBB5089 the 1st pin connection.SBB5089's puts Big device U3 the 3rd pin is connected through the 19th electric capacity C19 with the input of downstream attenuation circuit.

The upstream attenuation circuit is identical with the circuit structure of downstream attenuation circuit, and the downstream attenuation circuit includes PIN Diode D1-1, PIN diode D1-2, PIN diode D2-1, PIN diode D2-2, the anode of the PIN diode D1-1 It is grounded through the 25th electric capacity C25, the anode of the PIN diode D2-1 is grounded through the 26th electric capacity C26, PIN diode D1-1 sun The resistance R19 of pole the 19th is connected with the 23rd resistance R23 one end, and PIN diode D2-1 anode is through the 20th resistance R20 and the 23rd Resistance R23 one end connection, the 23rd resistance R23 other end are connected with 5V power supplys, and the 23rd resistance R23 other end is through the 7th electricity Sense L7 is connected with 5V power supplys, and the 23rd resistance R23 other end is grounded through the 41st electric capacity C41；The anode of the PIN diode D1-2 One end after being connected with PIN diode D2-2 anode with the 6th inductance L6 is connected, and the 6th inductance L6 other end is connected with MCU, The 6th inductance L6 other end is grounded through the 45th electric capacity C45, and the 45th electric capacity C45 both ends are parallel with the 46th electric capacity C46；The PIN Diode D1-1 negative electrode is grounded after being connected with PIN diode D1-2 negative electrode through the 5th resistance R5, the PIN diode D1-1 The node that is connected with PIN diode D1-2 negative electrode of negative electrode be downstream attenuation circuit input；The PIN diode D2-1 Negative electrode be connected with PIN diode D2-2 negative electrode after through the 6th resistance R6 be grounded, the negative electrode and PIN of the PIN diode D2-1 The node of diode D2-2 negative electrode connection is the output end of downstream attenuation circuit.

It is provided with second level downstream filtering circuit between the downstream attenuation circuit and descending power amplifying circuit, described second Level downstream filtering circuit is using the second SAW filter F2 and the 3rd SAW filter F3 to connect.

The output end of downstream attenuation circuit is connected through the 20th electric capacity C20 with the input of second level downstream filtering circuit.The The output end of two level downstream filtering circuit is connected through the 21st electric capacity C21 with the input of descending power amplifying circuit.

The ascending power amplifying circuit is identical with the circuit structure of descending power amplifying circuit；The descending power amplification Circuit includes model SKY77768 power amplifier module U5 and SBB5089 amplifier U4, the amplification of the SBB5089 Device U4 the 1st pin is the input of descending power amplifying circuit, and SBB5089 amplifier U4 the 4th pin is grounded, SBB5089 amplifier U4 the 3rd pin is connected through an attenuation network with power amplifier module U5 the 2nd pin, SBB5089 Amplifier U4 the 3rd pin through the input of the 22nd electric capacity C22 and attenuation network connect, the output end of attenuation network is through the 23rd Electric capacity C23 is connected with power amplifier module U5 the 2nd pin.The amplifier U4 of the SBB5089 the 3rd pin and the 3rd electricity Feel L3 one end connection, the one end of the 3rd inductance L3 other end respectively with the 35th electric capacity C35, the 17th resistance R17 is connected, and the 35th The electric capacity C35 other end and SBB5089 amplifier U4 the 2nd pin connect, and are grounded, and the 35th electric capacity C35 both ends are in parallel There is the 36th electric capacity C36, the 17th resistance R17 other ends are connected with 5V power supplys, and the 17th resistance R17 other ends are through the 7th inductance L7 and 5V Power supply is connected, and the 17th resistance R17 other ends are grounded through the 38th electric capacity C38, and the both ends of the 38th electric capacity C38 are parallel with the 42nd electricity Hold C42；The 1st pin, the 10th pin of the power amplifier module U5 is connected after connecting with 3.3V power supplys, the power amplification Device module U5 the 1st pin, the 10th pin is grounded after connecting through the 12nd electric capacity C12, and the both ends of the 12nd electric capacity C12 are parallel with 13rd electric capacity C13, the 14th electric capacity C14, the 15th electric capacity C15, the 16th electric capacity C16, the 9th pin of the power amplifier module U5 For the output end of descending power amplifying circuit, the 8th pin of the power amplifier module U5 is grounded through the 12nd resistance R12, institute The 7th pin, the 11st pin for stating power amplifier module U5 are grounded, the 5th pin difference of the power amplifier module U5 It is connected with the 13rd resistance R13, the 18th resistance R18, the 24th electric capacity C24 one end, the 13rd resistance the R13 other end and 3.3V power supplys Connection, the 18th resistance the R18 other end, the 24th electric capacity C24 other end are grounded；The descending detecting circuit includes Schottky The one end of diode D3, the Schottky diode D3 anode respectively with the 5th inductance L5, the 37th electric capacity C37 is connected, the 5th electricity Feel L5 other end ground connection, the 37th electric capacity C37 other end and power amplifier module U5 the 6th pin, the Schottky two Pole pipe D3 negative electrode is connected with MCU, the negative electrode of the Schottky diode D3 respectively with the 39th electric capacity C39, the 22nd resistance R22 One end connects, and the 39th electric capacity C39, the 22nd resistance R22 other end ground connection, the 39th electric capacity C39 both ends are parallel with the 40th electric capacity C40。

The attenuation network uses the π type attenuation networks being made up of the 7th resistance R7, the 11st resistance R11, the 8th resistance R8.

It is provided with the up filter circuit in the second level between the upstream attenuation circuit and ascending power amplifying circuit, described second The up filter circuit of level uses fifth sound surface wave filter F5 and falling tone surface wave filter F4, the fifth sound surface wave filter An amplifying circuit is provided between F5 and falling tone surface wave filter F4, the amplifying circuit includes model SBB5089 amplifier U12, SBB5089 amplifier U12 the 1st pin are connected with fifth sound surface wave filter F5 output end, SBB5089 amplification Device U12 the 4th pin ground connection, SBB5089 amplifier U12 the 3rd pin connect with falling tone surface wave filter F4 input Connect, the amplifier U12 of the SBB5089 the 3rd pin is connected with the 17th inductance L17 one end, the 17th inductance L17 other end One end with the 67th electric capacity C67, the 34th resistance R34 is connected respectively, the 67th electric capacity C67 other end and SBB5089 amplifier U12 the 2nd pin connection, and be grounded, the 67th electric capacity C67 both ends are parallel with the 67th electric capacity C67, the 34th resistance R34 other end It is connected with 5V power supplys, the 34th resistance R34 other end is connected through the 12nd inductance L12 with 5V power supplys, and the 34th resistance R34 other end is through 62 electric capacity C62 are grounded, and the both ends of the 62nd electric capacity C62 are parallel with the 63rd electric capacity C63.SBB5089 actives biasing networks provide Stable overcurrent protection and dc point.

First RF switch, the second RF switch use sound table duplexer, the model of sound table duplexer SD902AP2.Descending input of the output end of the descending power amplifying circuit through the 47th electric capacity C47 and the second RF switch Connection.The descending input of second RF switch is grounded through the 8th inductance L8.It is the descending output end of second RF switch, up defeated Enter end to be used to be connected with GPRS data transport module respectively.The up output end of second RF switch is grounded through the 11st inductance L11. The up output end of second RF switch is connected through the 47th electric capacity C47 with the input of up preposition amplification, filter circuit.It is described The electric capacity C48 of descending output end the 48th of first RF switch is connected with the input of descending preposition amplification, filter circuit.First penetrates The descending output end of frequency switch is grounded through the 9th inductance L9.The descending input of first RF switch, up output end are used to distinguish It is connected with antenna.Up input of the output end of the ascending power amplifying circuit through the 49th electric capacity C49 and the first RF switch End connection.The uplink input end of first RF switch is grounded through the 10th inductance L10.

The MCU is connected with display, live for convenience for showing real received signal strength under As-Is The operation of personnel, to facilitate Field Force to select base station.

Present invention has the advantage that：The test of GPRS acquisition terminal signal strengths self-adapting data and biography due to the present invention Defeated device includes MCU, and the downlink is the descending preposition amplification, filter circuit, downstream attenuation circuit, descending being sequentially connected Power amplification circuit, the up-link are the up preposition amplification, filter circuit, upstream attenuation circuit, up being sequentially connected Power amplifier；The descending preposition amplification, the output end of the input of filter circuit, ascending power amplifier are penetrated with first Frequency switch connection, the up preposition amplification, the output end of the input of filter circuit, descending power amplifying circuit are with second RF switch connects；Descending detecting circuit is provided between MCU and the descending power amplifying circuit, the descending detecting circuit is used In the power output of detection descending power amplifying circuit, and the power output of the descending power amplifying circuit detected is converted to DC level passes to MCU, and the MCU is used for the power output for receiving descending power amplifying circuit, and descending power is amplified The power output of circuit is compared with setting value, and output control signal gives downstream attenuation circuit, control downstream attenuation circuit Attenuation size（Attenuation amplitude）, so as to control the power output size of descending power amplifying circuit；The MCU and ascending power Up detecting circuit is provided between amplifying circuit, the up detecting circuit is used for the output work for detecting ascending power amplifying circuit Rate, and the power output of the ascending power amplifying circuit detected is converted into DC level and passes to MCU；The MCU is used for The power output of ascending power amplifying circuit is received, and the power output of ascending power amplifying circuit is compared with setting value Compared with output control signal gives upstream attenuation circuit, controls the attenuation size of upstream attenuation circuit（Attenuation amplitude）, so as to control The power output size of ascending power amplifying circuit.Using foregoing circuit structure so that the present invention possesses two-way automatic gain control The uplink and downlink signals amplification link circuit of system.And possesses the amplifier of high stability and low-noise characteristic in the case of high-gain. And the present invention realizes the exploitation of inexpensive uplink and downlink signals amplifier with intelligent control technology, there is provided automatic growth control With the dual-use function of on-site signal intensity detection.Because the present invention has automatic gain control function, output signal control is existed One rational scope, makes the signal intensity that base station receives in allowed limits, while and can is according to receiving signal Intensity adjusts the gain of receiving terminal amplifier, makes the signal amplitude into GPRS module in optimal state.

In a word, the present invention amplifies for two-way timesharing, possesses two-way automatic growth control, two-way power detection, receives single channel Signal intensity such as shows at the function.The present invention is alternatively arranged as signal strength tester, there is corresponding signal strength display screen.

Brief description of the drawings

Fig. 1 is the test of GPRS acquisition terminal signal strengths self-adapting data and the theory diagram of transmitting device of the present invention；

Fig. 2 tests specific with the MCU parts of transmitting device for the GPRS acquisition terminal signal strengths self-adapting data of the present invention Circuit diagram；

Fig. 3 is the test of GPRS acquisition terminal signal strengths self-adapting data and the uplink and downlink link of transmitting device of the present invention Physical circuit figure；

Fig. 4 is the simulation result schematic diagram of the voltage-controlled attenuator circuit of the present invention；

Fig. 5 is the result schematic diagram emulated in ADS simulation softwares to attenuator circuit minimal attenuation degree；

Fig. 6 is the obtained simulation result when the equiva lent impedance of PIN diode in voltage-controlled attenuator circuit reaches maximum 1500 ohm Schematic diagram.

Embodiment

Referring to Fig. 1 to Fig. 3, a kind of GPRS acquisition terminals signal strength self-adapting data test and transmitting device, including it is upper Line link and downlink, in addition to MCU, the downlink are the descending preposition amplification, filter circuit, descending being sequentially connected Attenuator circuit, descending power amplifying circuit, the up-link are the up preposition amplification, filter circuit, up being sequentially connected Attenuator circuit, ascending power amplifier；The descending preposition amplification, the input of filter circuit, ascending power amplifier it is defeated Go out end to be connected with the first RF switch, the up preposition amplification, the input of filter circuit, descending power amplifying circuit Output end is connected with the second RF switch；Descending detecting circuit is provided between MCU and the descending power amplifying circuit, it is described Descending detecting circuit is used to detecting the power output of descending power amplifying circuit, and by the descending power amplifying circuit detected Power output is converted to DC level and passes to MCU, and the MCU is used for the power output for receiving descending power amplifying circuit, and By the power output of descending power amplifying circuit compared with setting value, output control signal gives downstream attenuation circuit, control The attenuation size of downstream attenuation circuit（Attenuation amplitude）, so as to control the power output size of descending power amplifying circuit；Institute State and up detecting circuit is provided between MCU and ascending power amplifying circuit, the up detecting circuit is used to detect ascending power The power output of amplifying circuit, and the power output of the ascending power amplifying circuit detected is converted into DC level and passed to MCU；The MCU is used to receiving the power output of ascending power amplifying circuit, and by the power output of ascending power amplifying circuit Compared with setting value, output control signal gives upstream attenuation circuit, controls the attenuation size of upstream attenuation circuit（Decay Amplitude）, so as to control the power output size of ascending power amplifying circuit.

The descending preposition amplification, filter circuit include high-gain HEMT amplifier elements U6, the high-gain HEMT amplifications Element U6 grid is used to be connected with the first RF switch, two source groundings of the high-gain HEMT amplifier elements U6, The grid of the high-gain HEMT amplifier elements U6 is connected with the 4th inductance L4 one end, the other end difference of the 4th inductance L4 It is connected with the 43rd electric capacity C43, the 24th resistance R24 one end, the 43rd electric capacity C43 other ends ground connection, the two of the 43rd electric capacity C43 End is parallel with the 44th electric capacity C44, the other end of the 24th resistance R24 respectively with the 21st resistance R21, the 25th resistance R25 one End connection, the other end ground connection of the 25th resistance R25, the other end of the 21st resistance R21 respectively with the 14th resistance R14, 15th resistance R15, the 28th electric capacity C28 one end connection, the 28th electric capacity C28 other end ground connection, the 15th resistance R15's is another One end is connected (other end of the 15th resistance R15 is connected through the 7th inductance L7 with 5V power supplys) with 5V power supplys, the 15th electricity The resistance R15 other end is grounded through the 29th electric capacity C29, and the 29th electric capacity C29 both ends are parallel with the 30th electric capacity C30, the 14th electricity Hinder the one end of the R14 other end respectively with the 27th electric capacity C27, the 1st inductance L1 to be connected, the 27th electric capacity C27 other end ground connection, the The drain electrode with high-gain HEMT amplifier elements U6, the 9th resistance R9 one end are connected the 1 inductance L1 other end respectively, the 9th electricity The resistance R9 other end is connected with the 17th electric capacity C17 one end, and the 17th electric capacity C17 other end is connected with an attenuation network, and this declines The output end for subtracting network is connected with first order downstream filtering circuit, and the output end of the first order downstream filtering circuit is used for under Row attenuator circuit connects, and the first order downstream filtering circuit uses the first SAW filter F1.The selection of preamplifier Need to follow the principle of low noise, gain is not very important index, is employed according to using requirement the present embodiment of frequency range The ATF-54143 high frequencies FET of Avago.

The upstream attenuation circuit is identical with the circuit structure of downstream attenuation circuit, and the downstream attenuation circuit includes PIN Diode D1-1, PIN diode D1-2, PIN diode D2-1, PIN diode D2-2, the anode of the PIN diode D1-1 It is grounded through the 25th electric capacity C25, the anode of the PIN diode D2-1 is grounded through the 26th electric capacity C26, PIN diode D1-1 sun The resistance R19 of pole the 19th is connected with the 23rd resistance R23 one end, and PIN diode D2-1 anode is through the 20th resistance R20 and the 23rd Resistance R23 one end connection, the 23rd resistance R23 other end are connected with 5V power supplys, and the 23rd resistance R23 other end is through the 7th electricity Sense L7 is connected with 5V power supplys, and the 23rd resistance R23 other end is grounded through the 41st electric capacity C41；The anode of the PIN diode D1-2 One end after being connected with PIN diode D2-2 anode with the 6th inductance L6 is connected, and the 6th inductance L6 other end is connected with MCU, The 6th inductance L6 other end is grounded through the 45th electric capacity C45, and the 45th electric capacity C45 both ends are parallel with the 46th electric capacity C46；The PIN Diode D1-1 negative electrode is grounded after being connected with PIN diode D1-2 negative electrode through the 5th resistance R5, the PIN diode D1-1 The node that is connected with PIN diode D1-2 negative electrode of negative electrode be downstream attenuation circuit input；The PIN diode D2-1 Negative electrode be connected with PIN diode D2-2 negative electrode after through the 6th resistance R6 be grounded, the negative electrode and PIN of the PIN diode D2-1 The node of diode D2-2 negative electrode connection is the output end of downstream attenuation circuit.PIN diode D1-1, PIN diode D1-2 Using model HSMP3814 PIN diode, this pipe is internal twin double PIN diodes.The pole of PIN diode D2-1, PIN bis- Pipe D2-2 also uses model HSMP3814 PIN diode, and this pipe is internal twin double PIN diodes.

The descending power amplifying circuit includes putting for model SKY77768 power amplifier module U5 and SBB5089 Big device U4, the SBB5089 amplifier U4 the 1st pin are the input of descending power amplifying circuit, SBB5089 amplification Device U4 the 4th pin ground connection, SBB5089 amplifier U4 the 3rd pin is through an attenuation network and power amplifier module U5 2nd pin connects, and SBB5089 amplifier U4 the 3rd pin connects through the input of the 22nd electric capacity C22 and attenuation network, declines The output end for subtracting network is connected through the 23rd electric capacity C23 with power amplifier module U5 the 2nd pin.The amplification of the SBB5089 Device U4 the 3rd pin is connected with the 3rd inductance L3 one end, the 3rd inductance L3 other end respectively with the 35th electric capacity C35, the 17th electricity R17 one end connection, the 35th electric capacity C35 other end and SBB5089 amplifier U4 the 2nd pin connection are hindered, and is grounded, the 35 electric capacity C35 both ends are parallel with the 36th electric capacity C36, and the 17th resistance R17 other ends are connected with 5V power supplys, and the 17th resistance R17 is another The inductance L7 of one end the 7th is connected with 5V power supplys, and the 17th resistance R17 other ends are grounded through the 38th electric capacity C38, the 38th electric capacity C38 both ends are parallel with the 42nd electric capacity C42；After the 1st pin of the power amplifier module U5, the connection of the 10th pin with 3.3V Power supply connects, and is grounded after the 1st pin of the power amplifier module U5, the connection of the 10th pin through the 12nd electric capacity C12, and described the 12 electric capacity C12 both ends are parallel with the 13rd electric capacity C13, the 14th electric capacity C14, the 15th electric capacity C15, the 16th electric capacity C16, the power Amplifier module U5 the 9th pin be descending power amplifying circuit output end, the 8th pin of the power amplifier module U5 It is grounded through the 12nd resistance R12, the 7th pin, the 11st pin of the power amplifier module U5 are grounded, the power amplifier The one end of module U5 the 5th pin respectively with the 13rd resistance R13, the 18th resistance R18, the 24th electric capacity C24 is connected, the 13rd resistance The R13 other end is connected with 3.3V power supplys, and the 18th resistance the R18 other end, the 24th electric capacity C24 other end are grounded；It is described The anode of descending detecting circuit including Schottky diode D3, the Schottky diode D3 respectively with the 5th inductance L5, the 37th electricity Hold C37 one end connection, the 5th inductance L5 other end ground connection, the 37th electric capacity C37 other end is with power amplifier module U5's 6th pin, the negative electrode of the Schottky diode D3 are connected with MCU, and the negative electrode of the Schottky diode D3 is respectively with the 39th Electric capacity C39, the 22nd resistance R22 one end connection, the 39th electric capacity C39, the 22nd resistance R22 other end ground connection, the 39th electric capacity C39 Both ends be parallel with the 40th electric capacity C40.

The up preposition amplification, filter circuit include high-gain HEMT amplifier elements U9, the high-gain HEMT amplifications Element U9 grid is used to be connected with the second RF switch, two source groundings of the high-gain HEMT amplifier elements U9, The grid of the high-gain HEMT amplifier elements U9 is connected with the 15th inductance L15 one end, the other end of the 15th inductance L15 One end with the 54th electric capacity C54, the 27th resistance R27 is connected respectively, the 54th electric capacity C54 other ends ground connection, the 54th electric capacity C54 Both ends be parallel with the 55th electric capacity C55, the other end of the 27th resistance R27 respectively with the 30th resistance R30, the 26th resistance R26 One end connection, the other end ground connection of the 26th resistance R26, the other end of the 30th resistance R30 respectively with the 36th resistance R36, the 35th resistance R35, the 71st electric capacity C71 one end connection, the 71st electric capacity C71 other end ground connection, the 35th resistance R35 The other end be connected with 5V power supplys (other end of the 35th resistance R35 is connected through the 12nd inductance L12 with 5V power supplys), it is described The 35th resistance R35 other end is grounded through the 69th electric capacity C69, and the 69th electric capacity C69 both ends are parallel with the 70th electric capacity C70, described The one end of the 36th resistance R36 other end respectively with the 72nd electric capacity C72, the 18th inductance L18 is connected, and the 72nd electric capacity C72's is another End ground connection, the 18th inductance L18 other end drain electrode with high-gain HEMT amplifier elements U9, the 42nd resistance R42 one end respectively Connection, the other end of the 42nd resistance R42 are connected with the 81st electric capacity C81 one end, and the 81st electric capacity C81 other end is connected with One attenuation network, the output end of the attenuation network are connected with the up filter circuit of the first order, the up filter circuit of the first order Output end be used for be connected with upstream attenuation circuit, the up filter circuit of the first order uses the 6th SAW filter F6. The output end of the up filter circuit of the first order is connected through the 80th electric capacity C80 with the input of upstream attenuation circuit.

The attenuation network uses the π type attenuation networks being made up of the 47th resistance R47, the 41st resistance R41, the 48th resistance R48. The one end of the input of π type attenuation networks respectively with the 48th resistance R48, the 41st resistance R41 is connected, and the 48th resistance R48's is another End ground connection, the output end with π type attenuation networks, the 47th resistance R47 one end are connected the 41st resistance R41 other end respectively, institute State the 47th resistance R47 other end ground connection.

The upstream attenuation circuit includes PIN diode D5-1, PIN diode D5-2, the pole of PIN diode D6-1, PIN bis- Pipe D6-2, the anode of the PIN diode D5-1 are grounded through the 60th electric capacity C60, and the anode of the PIN diode D6-1 is through the 61st Electric capacity C61 is grounded, and PIN diode D5-1 anode is connected through the 31st resistance R31 with the 28th resistance R28 one end, PIN diode D6-1 anode is connected through the 32nd resistance R32 with the 28th resistance R28 one end, and the 28th resistance the R28 other end and 5V power supplys connect Connect, the 28th resistance R28 other end is connected through the 12nd inductance L12 with 5V power supplys, and the 28th resistance R28 other end is through the 56th electric capacity C56 is grounded；One end with the 13rd inductance L13 after the anode of the PIN diode D5-2 is connected with PIN diode D6-2 anode Connection, the 13rd inductance L13 other end are connected with MCU, and the 13rd inductance L13 other end is grounded through the 52nd electric capacity C52, the 52nd electricity The both ends for holding C52 are parallel with the 53rd electric capacity C53；The negative electrode of the PIN diode D5-1 is connected with PIN diode D5-2 negative electrode It is grounded by the 45th resistance R45, the negative electrode of the PIN diode D5-1 is with the node that PIN diode D5-2 negative electrode is connected The input of upstream attenuation circuit；The negative electrode of the PIN diode D6-1 be connected with PIN diode D6-2 negative electrode after through the 46th Resistance R46 is grounded, and the node that the negative electrode of the PIN diode D6-1 is connected with PIN diode D6-2 negative electrode is upstream attenuation The output end of circuit.PIN diode D5-1, PIN diode D5-2 use model HSMP3814 PIN diode, and this pipe is Internal twin double PIN diodes.PIN diode D6-1, PIN diode D6-2 also use the model HSMP3814 poles of PIN bis- Pipe, this pipe are internal twin double PIN diodes.

The ascending power amplifying circuit includes model SKY77768 power amplifier module U10's and SBB5089 Amplifier U11, the SBB5089 amplifier U11 the 1st pin are the input of ascending power amplifying circuit, SBB5089's Amplifier U11 the 4th pin ground connection, SBB5089 amplifier U11 the 3rd pin is through an attenuation network and power amplifier mould Block U10 the 2nd pin connection, SBB5089 amplifier U11 input of the 3rd pin through the 75th electric capacity C75 and attenuation network Connection, the output end of attenuation network are connected through the 74th electric capacity C74 with power amplifier module U10 the 2nd pin.It is described SBB5089 amplifier U11 the 3rd pin is connected with the 16th inductance L16 one end, the 16th inductance L16 other end respectively with 65th electric capacity C65, the 38th resistance R38 one end connection, the of the 65th electric capacity C65 other end and SBB5089 amplifier U11 2 pins connect, and are grounded, and the 65th electric capacity C65 both ends are parallel with the 66th electric capacity C66, the 38th resistance R38 other ends and 5V power supplys Connection, the 38th resistance R38 other ends are connected through the 12nd inductance L12 with 5V power supplys, and the 38th resistance R38 other ends are through the 51st electric capacity C51 is grounded, and the both ends of the 51st electric capacity C51 are parallel with the 57th electric capacity C57；Draw the 1st of the power amplifier module U10 Be connected after pin, the connection of the 10th pin with 3.3V power supplys, after the 1st pin of the power amplifier module U10, the 10th pin connect It is grounded through the 82nd electric capacity C82, the both ends of the 82nd electric capacity C82 are parallel with the 83rd electric capacity C83, the 84th electric capacity C84, the 85th electric capacity C85, the 86th electric capacity C86, the 9th pin of the power amplifier module U10 is the output end of ascending power amplifying circuit, described Power amplifier module U10 the 8th pin is grounded through the 39th resistance R39, the 7th pin of the power amplifier module U10, 11 pins are grounded, the 5th pin of the power amplifier module U10 respectively with the 37th resistance R37, the 33rd resistance R33, the 73rd Electric capacity C73 one end connection, the 37th resistance R37 other end are connected with 3.3V power supplys, the 33rd resistance R33 other end, the 73rd The electric capacity C73 other end is grounded；The up detecting circuit includes Schottky diode D4, the Schottky diode D4's The one end of anode respectively with the 14th inductance L14, the 64th electric capacity C64 is connected, the 14th inductance L14 other end ground connection, the 64th electric capacity The C64 other end and power amplifier module U10 the 6th pin, the negative electrode of the Schottky diode D4 are connected with MCU, institute State the one end of Schottky diode D4 negative electrode respectively with the 58th electric capacity C58, the 29th resistance R29 to be connected, the 58th electric capacity C58, 29 resistance R29 other end ground connection, the 58th electric capacity C58 both ends are parallel with the 59th electric capacity C59.

The attenuation network uses the π type attenuation networks being made up of the 40th resistance R40, the 43rd resistance R43, the 44th resistance R44.

The up filter circuit in the second level is provided between the upstream attenuation circuit and ascending power amplifying circuit.Upstream attenuation The output end of circuit is connected through the 79th electric capacity C79 with the input of the up filter circuit in the second level.The up filtering in the second level Circuit uses fifth sound surface wave filter F5 and the falling tone surface wave filter F4, the fifth sound surface wave filter F5 and the falling tone An amplifying circuit is provided between surface wave filter F4.Fifth sound surface wave filter F5 output end is put through the 78th electric capacity C78 with this The input connection of big circuit.Input of the output end of the amplifying circuit through the 77th electric capacity C77 Yu falling tone surface wave filter F4 End connection.Falling tone surface wave filter F4 output end is connected through the 76th electric capacity C76 with the input of ascending power amplifying circuit. The amplifying circuit includes model SBB5089 amplifier U12, SBB5089 amplifier U12 the 1st pin and fifth sound table Face wave filter F5 output end connection, SBB5089 amplifier U12 the 4th pin ground connection, the of SBB5089 amplifier U12 3 pins are connected with falling tone surface wave filter F4 input, the amplifier U12 of the SBB5089 the 3rd pin and the 17th electricity Feel L17 one end connection, the one end of the 17th inductance L17 other end respectively with the 67th electric capacity C67, the 34th resistance R34 is connected, the The 67 electric capacity C67 other end and SBB5089 amplifier U12 the 2nd pin connect, and are grounded, and the 67th electric capacity C67 both ends are simultaneously The 67th electric capacity C67 is associated with, the 34th resistance R34 other end is connected with 5V power supplys, and the 34th resistance R34 other end is through the 12nd inductance L12 It is connected with 5V power supplys, the 34th resistance R34 other end is grounded through the 62nd electric capacity C62, and the both ends of the 62nd electric capacity C62 are parallel with 63 electric capacity C63.SBB5089 actives biasing networks provide stable overcurrent protection and dc point.

The principle Analysis of the present invention：GSM communication signals are divided into uplink and downlink two-way, are each responsible for GPRS module and send The signal of GPRS module is sent to toward the signal of base station and base station.Its up centre frequency is 902MHz, and downlink center frequency is 947MHz.So it is each responsible for inside amplifier and by the different amplifying circuit of two-way.Spacing wave is by antenna induction To the input interface of amplifier, it is necessary first to by a selecting switch, next base station signal will be sensed and be sent into descending amplification electricity Road.The present invention be directed to GPRS communications are special, the double work(switching switches in sound surface are employed, i.e., a kind of duplexer, it is a kind of right The selective two-port network of frequency, bandwidth selection can be carried out, for separating or combining the signal of different frequency, mainly Effect is to suppress unwanted signal, useful signal is passed through wave filter.The signal that antenna is sent into is selectively to switch over , antenna is to may only be by 947MHz frequency between downstream amplifier, and upward signal can only pass through between antenna The signal of 902MHz frequencies, and two paths of signals can not timesharing switching.

The downstream signal that selection is switched by switching enters descending preposition amplification, filter circuit.Preposition amplification, filter circuit Main function has two, first, the Insertion Loss of SAW filter is made up, second, mixed in the faintness wave that antenna receives make an uproar If sound is sent to amplifier of this part of next stage using noise characteristic difference without amplification, small-signal will be by noise Flood.The preposition amplification of the present invention, the noise figure of filter circuit are good.The noise figure of amplifying circuit be input signal S/N with The ratio between output signal S/N.If using the amplifier of noise figure difference, noise caused by inside amplifier can be mixed into signal, Input signal can not be taken out from noise.And the noise figure of amplifying circuit is smaller, gain is bigger, noise caused by late-class circuit Influence smaller.The ATF54143 that the preposition amplification of the present invention, filter circuit use is a high-gain with extremely low noise HEMT amplifier elements, its circuit, which is formed, only has two major parts, is biasing circuit all the way, dc point is provided for device, Another way is power supply supply.There is a fixed attenuation network in amplifying circuit output par, c increase, by the parameter for adjusting the network The gain of this grade of amplifying circuit is set to be exactly equal to the Insertion Loss of SAW filter after antenna change-over switch and this grade of amplifier.

Downstream signal by preposition amplification, filter circuit continues to be sent to subordinate's amplifier, and this grade of amplifier is using fixation The integrated circuit component SBB5089, SBB-5089 of gain are a high-performance InGaP HBT MMIC, and it is that have actively partially Put the Darlington configuration amplifier of network.Active biasing networks provide stable overcurrent protection and dc point, and it can be Worked well under 5V power supplys, biasing circuit is not needed compared with other amplifiers, and also have and preferably put down with interior gain Smooth degree.This device possesses internal matching network, and matching impedance is 50 ohm, therefore need not be designed outside when circuit is designed Portion's matching network is coordinated, and has been reached and has been designed most simple purpose.Voltage-controlled decay electricity is sent to by the SBB5089 signals being exaggerated Road, this is a voltage-controlled attenuator circuit being made up of PIN diode, and PIN diode operates mainly in reverse-bias state, added negative Voltage（Or zero-bias）When, PIN pipes are equivalent to electric capacity+resistance；When adding positive voltage, PIN pipes are equivalent to small resistor.The present invention utilizes The biasing characteristic of PIN diode designs voltage-controlled attenuator circuit.Relative to fixed attenuation circuit, can be replaced with three diodes Fixed resistance in circuit, a variable attenuator is constructed, but, can so cause the asymmetry in network, so as to cause to produce A raw considerably complicated bias network.Two PIN diodes replace series resistance therein to obtain several performance sides The benefit in face.First, network is made to be isolated with other parts by there is condensance for series diode, with two two poles Pipe replaces a resistance to improve maximum attenuation value or make upper frequency limit double under conditions of certain pad value.Second, generation It is 180 degree reversal connection for two diodes of series resistance, thus inhibits the generation of even-times signal distortion.Third, by Attenuator network obtained from this is symmetrical, so as to greatly simplify bias network.PIN diode is used as attenuating elements When, PIN diode has the linearity higher than equivalent GaAs MESFETs, by using with thick I layers and low medium Signal distortion is minimized by by multiple PIN diode cans of relaxation frequency.In Avago companies PIN diode product The I layers of HSMP-3814 series of products are most thick in line.In low attenuation state, most of RF energy is only to be transferred to from input Output end.They are close to zero bias pressure condition, and its junction capacity will change with RF voltage synchronous, fortunately, due to two Diode is differential concatenation, it is possible to suppresses some distortions or distortion as caused by the electric capacity modulated by RF.Due to envelope Two of dress play a reversed role diode with the characteristic to match each other completely, therefore can obtain optimal distortion suppression ability.Fig. 4 is The simulation result of voltage-controlled attenuator.Attenuator circuit minimal attenuation degree is emulated in ADS simulation softwares, as a result such as Fig. 5 institutes Show.Minimal attenuation amount is -2.3db, and now PIN diode is in 10 ohm of lowest impedance.When the equiva lent impedance of PIN diode reaches To it is maximum 1500 ohm when, obtained simulation result is as shown in Figure 6.It will be seen from figure 6 that maximum attenuation is -31db. The size of this attenuation and bias voltage are linear relationships, thus can be in a disguised form by adjust the bias voltage of attenuator circuit come Adjust the gain of whole amplifying circuit.

Signal through overdamping by continuous two SAW filters carry out clutter filter out, as far as possible out of band signal width Degree forces down.Signal ingoing power amplifying circuit afterwards.The type of driving amplifier and the power amplifier selection of power amplification circuit Number be respectively SBB5089 and SKY77768.SBB5089 is wide band high-gain amplifier, this amplification utensil in 0-2GHZ frequency ranges Have well with interior gain flatness, average gain 20db.SKY77768 is the special power amplifier of mobile phone, is not only had Preferable amplification performance, is also equipped with power detection, can detect the size of power output, is carried for the work of voltage-controlled attenuator Reference is supplied.SKY77768 power amplifier modules are to mount module for the special surface of WCDMA application and development. SKY77768 mainly provides two functions in this project, first, power amplification function, up or downstream signal is amplified to Preferable performance number.Second, power detection, the benchmark of automatic growth control is provided for whole up or downstream signal.Its The power signal of output is realized by directional coupler, so also wanting additional a set of high frequency power detecting circuit to believe high frequency Number be converted to DC level.Power detection circuit is realized using Schottky diode, due to signal amplitude very little herein, so adopting With diode square law detecting circuit, this circuit, in signal very little, examined mainly by the nonlinear quadratic term of diode Ripple, high-order term is very small, can ignore, so also referred to as " small-signal square-law detector ".From the direct current of detecting circuit output Level is the power currently exported by power amplifier, and power is bigger, and voltage is higher.

With descending similar, difference is filter circuit for up preposition amplification, the element selection of filter circuit and circuit form Arrangement and wave filter selection, because the operating center frequency of upstream circuitry is 902MHz, thus in upstream circuitry own SAW filter is using 902MHz's.

In downstream circuitry, signal will once be amplified after first order wave filter, and main cause is downstream signal It is very faint, in order to prevent that signal to noise ratio reduces after voltage-controlled attenuator circuit, so having added first stage amplifier again in centre.And for Upward signal, the signal power of GPRS module output is just bigger, has very high signal to noise ratio, so by being put before one-level It is big make up can after the band damage of sound surface and be directly entered voltage-controlled attenuator and enter line amplitude handle, to SNR influence very little.

Because the analog signal channel of GPRS module is time-sharing work, thus during operation power detector output Performance number is exported in the form of voltage pulse.If with the affected automatic growth control basis of this level, work is inevitably resulted in Confusion on work, it is desirable to solve the fuzzy control circuit that this problem just needs a set of fairly perfect stabilization.If this partial function Realized using hardware, not only cost is high, and flexibility is very poor, and it is exactly circuit form to want to adapt to modification caused by certain situation Change, for extension and Perfect the work it is very unfavorable.For these reasons, in the automatic growth control part present invention using soft Part mode controls to realize that its is simulated, and thus can very easily make various expanded functions according to different applications, even Can make can carry out the Adaptable System of parameter modification automatically according to application environment.By contrast, we choose The single-chip microcomputer of STM32F303 series, wherein STM32F303CCX models possess two-way synchronous 12 ADC, 12 DAC of two-way.Together When kernel in include FPU, be adapted to the floating-point operation for doing high intensity, full speed dominant frequency can reach 72MHz, can meet this completely The needs of project.Uplink and downlink power detection signal is respectively fed to the two-way ADC of single-chip microcomputer, the two-way DAC difference of single-chip microcomputer Access the voltage controling end of voltage-controlled attenuator circuit.

By reasonably designing the coefficient in pid algorithm, we can obtain having targetedly gain compensation program, can So that the output of automatic growth control part is accomplished into stable output power, as the change of environment compensates deviation automatically, system is realized The normal operation of system.

The present invention workflow be：

Downstream signal obtains faint voltage signal by antenna induction, and this signal carries out high pass filter by thunder-arresting module first Ripple, the garbage signal and DC level that will be less than useful frequency range filter out, subsequently into RF switch.Now RF switch connects Preamplifier, it is filtered after the signal to coming in handy is amplified by first wave filter, this is one descending Band logical SAW filter, this wave filter have very precipitous attenuation rate, can filter out most garbage signal, Useful signal is sent into voltage-controlled attenuator and decayed, the output width of the amplitude of decay by MCU according to back power amplifier Degree determines.It is again introduced into after descending SAW filter filters out garbage signal to enter into power amplifier by the signal of attenuator Row power amplification, the watt level of now power amplifier output is equivalent to GPRS data transport module received signal amplitude The upper limit.The effect of wave detector is responsible for the amplitude of high frequency power signals being converted to DC level, to facilitate MCU to obtain.

When GPRS data transport module sends upward signal, this signal is filtered by upward signal SAW filter first Except preamplifier is sent into after noise, this amplifier main purpose is to make up SAW filter with the big disadvantage of internal loss End, is decayed by the signal of preamplifier into voltage-controlled attenuator, and the size of attenuation is obtained by the wave detector of rear end The power decision arrived, the upper limit of the power that this power is allowed by base station.Signal after decay passes through upstream filter ingoing power Amplifier, then it is sent to by arrester, antenna in space.

In whole work process, MCU is responsible for monitoring uplink signal strength, and upward signal start time, downstream signal is strong Degree and downstream signal intensity such as show at the work.

The preferred embodiments of the present invention are the foregoing is only, are not intended to limit the invention, it is clear that those skilled in the art Member can carry out various changes and modification without departing from the spirit and scope of the present invention to the present invention.So, if the present invention These modifications and variations belong within the scope of the claims in the present invention and its equivalent technologies, then the present invention is also intended to include these Including change and modification.

Claims

1. a kind of GPRS acquisition terminals signal strength self-adapting data test and transmitting device, including up-link and descending chain Road, it is characterised in that：Also include MCU, the downlink is the descending preposition amplification being sequentially connected, filter circuit, descending declined Powered down road, descending power amplifying circuit, the up-link are the up preposition amplification being sequentially connected, filter circuit, up declined Powered down road, ascending power amplifier；The descending preposition amplification, the output of the input of filter circuit, ascending power amplifier End be connected with the first RF switch, the up preposition amplification, the input of filter circuit, descending power amplifying circuit it is defeated Go out end to be connected with the second RF switch；Descending detecting circuit is provided between MCU and the descending power amplifying circuit, under described Row detecting circuit is used to detecting the power output of descending power amplifying circuit, and by the defeated of the descending power amplifying circuit detected Go out power and pass to MCU, the MCU is used for the power output for receiving descending power amplifying circuit, and descending power is amplified into electricity For the power output on road compared with setting value, output control signal gives downstream attenuation circuit, and control downstream attenuation circuit declines Size is reduced, so as to control the power output size of descending power amplifying circuit；Between MCU and the ascending power amplifying circuit Provided with up detecting circuit, the up detecting circuit is used for the power output for detecting ascending power amplifying circuit, and will detection To the power output of ascending power amplifying circuit pass to MCU；The MCU is used for the output for receiving ascending power amplifying circuit Power, and by the power output of ascending power amplifying circuit compared with setting value, output control signal gives upstream attenuation electricity Road, the attenuation size of upstream attenuation circuit is controlled, so as to control the power output size of ascending power amplifying circuit.

2. GPRS acquisition terminals signal strength self-adapting data test according to claim 1 and transmitting device, its feature It is：The up preposition amplification, filter circuit are identical with the circuit structure of descending preposition amplification, filter circuit, described descending Preposition amplification, filter circuit include high-gain HEMT amplifier elements（U6）, the high-gain HEMT amplifier elements（U6）Grid For being connected with the first RF switch, the high-gain HEMT amplifier elements（U6）Two source groundings, the high-gain HEMT amplifier elements（U6）Grid and the 4th inductance（L4）One end connection, the 4th inductance（L4）The other end respectively with 43 electric capacity（C43）, the 24th resistance（R24）One end connection, the 43rd electric capacity（C43）The other end is grounded, the 43rd electric capacity（C43） Both ends be parallel with the 44th electric capacity（C44）, the 24th resistance（R24）The other end respectively with the 21st resistance（R21）, the 25th electricity Resistance（R25）One end connection, the 25th resistance（R25）The other end ground connection, the 21st resistance（R21）The other end difference With the 14th resistance（R14）, the 15th resistance（R15）, the 28th electric capacity（C28）One end connection, the 28th electric capacity（C28）Another termination Ground, the 15th resistance（R15）The other end (the 15th resistance is connected with 5V power supplys（R15）The other end through the 7th inductance （L7）It is connected with 5V power supplys), the 15th resistance（R15）The other end through the 29th electric capacity（C29）Ground connection, the 29th electric capacity（C29） Both ends be parallel with the 30th electric capacity（C30）, the 14th resistance（R14）The other end respectively with the 27th electric capacity（C27）, the 1st electricity Sense（L1）One end connection, the 27th electric capacity（C27）The other end ground connection, the 1st inductance（L1）The other end respectively with high-gain HEMT amplifier elements（U6）Drain electrode, the 9th resistance（R9）One end connection, the 9th resistance（R9）The other end and the 17th electricity Hold（C17）One end connection, the 17th electric capacity（C17）The other end be connected with an attenuation network, the output end of the attenuation network connects First order downstream filtering circuit is connected to, the output end of the first order downstream filtering circuit is used to be connected with downstream attenuation circuit, The first order downstream filtering circuit uses the first SAW filter F1.

3. GPRS acquisition terminals signal strength self-adapting data test according to claim 2 and transmitting device, its feature It is：An amplifying circuit is provided between the output end of the first order downstream filtering circuit and the input of downstream attenuation circuit, The amplifying circuit includes model SBB5089 amplifier（U3）, SBB5089 amplifier（U3）The 1st pin and the first order The output end connection of downstream filtering circuit, SBB5089 amplifier（U3）The 4th pin ground connection, SBB5089 amplifier（U3） The 3rd pin be connected with the input of downstream attenuation circuit, the amplifier of the SBB5089（U3）The 3rd pin and the 2nd inductance （L2）One end connection, the 2nd inductance（L2）The other end respectively with the 31st electric capacity（C31）, the 16th resistance（R16）One end connect Connect, the 31st electric capacity（C31）The other end and SBB5089 amplifier（U3）The connection of the 2nd pin, and be grounded, the 31st electric capacity （C31）Both ends be parallel with the 32nd electric capacity（C32）, the 16th resistance（R16）The other end is connected with 5V power supplys（16th resistance（R16） The other end is through the 7th inductance（L7）It is connected with 5V power supplys）, the 16th resistance（R16）The other end is through the 33rd electric capacity（C33）Ground connection is described 33rd electric capacity（C33）Both ends be parallel with the 34th electric capacity（C34）.

4. GPRS acquisition terminals signal strength self-adapting data test according to claim 1 and transmitting device, its feature It is：The upstream attenuation circuit is identical with the circuit structure of downstream attenuation circuit, and the downstream attenuation circuit includes the poles of PIN bis- Pipe D1-1, PIN diode D1-2, PIN diode D2-1, PIN diode D2-2, the PIN diode D1-1 anode are through 25 electric capacity（C25）Ground connection, the anode of the PIN diode D2-1 is through the 26th electric capacity（C26）Ground connection, PIN diode D1-1 sun The resistance of pole the 19th（R19）With the 23rd resistance（R23）One end connection, PIN diode D2-1 anode is through the 20th resistance（R20） With the 23rd resistance（R23）One end connection, the 23rd resistance（R23）The other end be connected with 5V power supplys（23rd resistance（R23）It is another The inductance of one end the 7th（L7）It is connected with 5V power supplys）, the 23rd resistance（R23）The other end through the 41st electric capacity（C41）Ground connection；It is described PIN diode D1-2 anode be connected with PIN diode D2-2 anode after with the 6th inductance（L6）One end connection, the 6th inductance （L6）The other end be connected with MCU, the 6th inductance（L6）The other end through the 45th electric capacity（C45）Ground connection, the 45th electric capacity（C45）'s Both ends are parallel with the 46th electric capacity（C46）；The negative electrode of the PIN diode D1-1 passes through after being connected with PIN diode D1-2 negative electrode 5th resistance（R5）Ground connection, the node that the negative electrode of the PIN diode D1-1 is connected with PIN diode D1-2 negative electrode is descending The input of attenuator circuit；The negative electrode of the PIN diode D2-1 be connected with PIN diode D2-2 negative electrode after through the 6th resistance （R6）Ground connection, the node that the negative electrode of the PIN diode D2-1 is connected with PIN diode D2-2 negative electrode is downstream attenuation circuit Output end.

5. GPRS acquisition terminals signal strength self-adapting data test according to claim 1 and transmitting device, its feature It is：The ascending power amplifying circuit is identical with the circuit structure of descending power amplifying circuit；The descending power amplification electricity Road includes model SKY77768 power amplifier module（U5）With SBB5089 amplifier（U4）, the SBB5089's puts Big device（U4）The 1st pin be descending power amplifying circuit input, SBB5089 amplifier（U4）The 4th pin ground connection, SBB5089 amplifier（U4）The 3rd pin through an attenuation network and power amplifier module（U5）The 2nd pin connection, institute State SBB5089 amplifier（U4）The 3rd pin and the 3rd inductance（L3）One end connection, the 3rd inductance（L3）The other end difference With the 35th electric capacity（C35）, the 17th resistance（R17）One end connection, the 35th electric capacity（C35）The other end and SBB5089 amplification Device（U4）The connection of the 2nd pin, and be grounded, the 35th electric capacity（C35）Both ends be parallel with the 36th electric capacity（C36）, the 17th resistance （R17）The other end is connected with 5V power supplys（17th resistance（R17）The other end is through the 7th inductance（L7）It is connected with 5V power supplys）, the 17th electricity Resistance（R17）The other end is through the 38th electric capacity（C38）Ground connection, the 38th electric capacity（C38）Both ends be parallel with the 42nd electric capacity（C42）； The power amplifier module（U5）The 1st pin, the 10th pin connection after be connected with 3.3V power supplys, the power amplifier mould Block（U5）The 1st pin, the 10th pin connection after through the 12nd electric capacity（C12）Ground connection, the 12nd electric capacity（C12）Both ends it is in parallel There is the 13rd electric capacity（C13）, the 14th electric capacity（C14）, the 15th electric capacity（C15）, the 16th electric capacity（C16）, the power amplifier module （U5）The 9th pin be descending power amplifying circuit output end, the power amplifier module（U5）The 8th pin through the 12nd Resistance（R12）Ground connection, the power amplifier module（U5）The 7th pin, the 11st pin be grounded, the power amplifier mould Block（U5）The 5th pin respectively with the 13rd resistance（R13）, the 18th resistance（R18）, the 24th electric capacity（C24）One end connection, the 13rd Resistance（R13）The other end be connected with 3.3V power supplys, the 18th resistance（R18）The other end, the 24th electric capacity（C24）The other end it is equal Ground connection；The descending detecting circuit includes Schottky diode（D3）, the Schottky diode（D3）Anode respectively with the 5th Inductance（L5）, the 37th electric capacity（C37）One end connection, the 5th inductance（L5）The other end ground connection, the 37th electric capacity（C37）It is another End and power amplifier module（U5）The 6th pin, the Schottky diode（D3）Negative electrode be connected with MCU, the Xiao Te Based diode（D3）Negative electrode respectively with the 39th electric capacity（C39）, the 22nd resistance（R22）One end connection, the 39th electric capacity（C39）、 22nd resistance（R22）The other end ground connection, the 39th electric capacity（C39）Both ends be parallel with the 40th electric capacity（C40）.

6. GPRS acquisition terminals signal strength self-adapting data test according to claim 1 and transmitting device, its feature It is：Second level downstream filtering circuit, the second level are provided between the downstream attenuation circuit and descending power amplifying circuit Downstream filtering circuit is using the second SAW filter F2 and the 3rd SAW filter F3 to connect.

7. GPRS acquisition terminals signal strength self-adapting data test according to claim 1 and transmitting device, its feature It is：The up filter circuit in the second level, the second level are provided between the upstream attenuation circuit and ascending power amplifying circuit Up filter circuit uses fifth sound surface wave filter F5 and the falling tone surface wave filter F4, the fifth sound surface wave filter F5 An amplifying circuit is provided between falling tone surface wave filter F4, the amplifying circuit includes model SBB5089 amplifier （U12）, SBB5089 amplifier（U12）The 1st pin be connected with fifth sound surface wave filter F5 output end, SBB5089's Amplifier（U12）The 4th pin ground connection, SBB5089 amplifier（U12）The 3rd pin and falling tone surface wave filter F4 Input connects, the amplifier of the SBB5089（U12）The 3rd pin and the 17th inductance（L17）One end connection, the 17th electricity Sense（L17）The other end respectively with the 67th electric capacity（C67）, the 34th resistance（R34）One end connection, the 67th electric capacity（C67）It is another One end and SBB5089 amplifier（U12）The connection of the 2nd pin, and be grounded, the 67th electric capacity（C67）Both ends be parallel with the 67th Electric capacity（C67）, the 34th resistance（R34）The other end is connected with 5V power supplys（34th resistance（R34）The other end is through the 12nd inductance（L12） It is connected with 5V power supplys）, the 34th resistance（R34）The other end is through the 62nd electric capacity（C62）Ground connection, the 62nd electric capacity（C62）Both ends It is parallel with the 63rd electric capacity（C63）.

8. GPRS acquisition terminals signal strength self-adapting data test according to claim 1 and transmitting device, its feature It is：First RF switch, the second RF switch use sound table duplexer, the model of sound table duplexer SD902AP2。

9. GPRS acquisition terminals signal strength self-adapting data test according to claim 1 and transmitting device, its feature It is：The MCU is connected with display, for showing received signal strength.