CN107740192A - Seed of single crystal silicon joining method - Google Patents
Seed of single crystal silicon joining method Download PDFInfo
- Publication number
- CN107740192A CN107740192A CN201710824128.3A CN201710824128A CN107740192A CN 107740192 A CN107740192 A CN 107740192A CN 201710824128 A CN201710824128 A CN 201710824128A CN 107740192 A CN107740192 A CN 107740192A
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- Prior art keywords
- seed
- single crystal
- crystal silicon
- joining method
- binding agent
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Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/06—Joining of crystals
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention provides a kind of joining method of seed of single crystal silicon, including：Successively in the Mosaic face coated with adhesive of each seed of single crystal silicon, the seed of single crystal silicon for being then coated with the binding agent is spliced on a horizontal table successively by predeterminated position, to form an inculating crystal layer；After standing preset time, the inculating crystal layer is put into the bottom of a crucible by mechanical hand.The joining method of above-mentioned seed of single crystal silicon, the Mosaic face of adjacent two seed of single crystal silicon is bonded together by binding agent, and stand preset time, so that binding agent is solid, and then multiple seed of single crystal silicon are made to be formed with inculating crystal layer, inculating crystal layer is put into crucible bottom again, binding agent between seed of single crystal silicon Mosaic face, both play a part of bonding adjacent two seed of single crystal silicon, the splicing gap between adjacent two seed of single crystal silicon can be eliminated again, the defect caused by splicing gap is avoided, improves the quality of monocrystalline silicon finished product.
Description
Technical field
The present invention relates to photovoltaic solar cell manufacturing technology field, more particularly to a kind of seed of single crystal silicon joining method.
Background technology
In recent years, monocrystalline silicon and polysilicon are widely used in the fields such as photovoltaic solar cell, liquid crystal display.Wherein, monocrystalline
Silicon is a kind of active nonmetalloid of comparison, is the important component of crystalline material, the forward position in new material development.Its
Main application is used as semi-conducting material and utilizes solar energy power generating, heat supply etc..
The conventional manufacture method of monocrystalline silicon is directional solidification method at present, by manually in the laying of the bottom of crucible rule
Cuboid seed of single crystal silicon, to form inculating crystal layer；Again by silicon material laying and inculating crystal layer；Then it is heated at high temperature crucible, so that silicon
Material is all melted and melts seed crystal layer segment, then determining for silicon ingot is realized on unfused seed of single crystal silicon by oriented heat dissipating
To growth, the crystal grain consistent with seed of single crystal silicon is obtained.
The casting ingot method of above-mentioned monocrystalline silicon, because single crystal seed is not integral cutting, the profile pattern of seed of single crystal silicon
Difference, it is uneven between the seed of single crystal silicon being stitched together when splicing seed of single crystal silicon, make adjacent two seed of single crystal silicon it
Between splicing gap reach 2-3mm, splicing gap is larger, causes monocrystalline silicon to be formed in oriented growth at splicing seams closeer
The on-monocrystalline nucleus of collection, and mixed and disorderly crystal grain and dislocation defects source is formed in growth course, so as to cause monocrystalline silicon finished product
It is of poor quality.
The content of the invention
Based on this, it is an object of the invention to provide a kind of joining method of seed of single crystal silicon, existed with solving seed of single crystal silicon
It is spliced to form the problem of gap is excessive between seed of single crystal silicon during inculating crystal layer
The invention provides a kind of joining method of seed of single crystal silicon, including：Successively in the splicing of each seed of single crystal silicon
Face coated with adhesive, the seed of single crystal silicon of the binding agent is then coated with by predeterminated position successively on a horizontal table
Splicing, to form an inculating crystal layer；After standing preset time, the inculating crystal layer is put into the bottom of a crucible by mechanical hand.
The joining method of above-mentioned seed of single crystal silicon, the Mosaic face of adjacent two seed of single crystal silicon is bonded in one by binding agent
Rise, and stand preset time, so that binding agent is solid, and then makes multiple seed of single crystal silicon be formed with inculating crystal layer, then by inculating crystal layer
It is put into crucible bottom, the binding agent between seed of single crystal silicon Mosaic face, both plays a part of bonding adjacent two seed of single crystal silicon, again
The splicing gap between adjacent two seed of single crystal silicon can be eliminated, the defect caused by splicing gap is avoided, improves monocrystalline
The quality of silicon finished product.
Further, the key component of the binding agent includes Ludox and ceramic bonding agent composition, Ludox and pottery
The scope of porcelain binding agent mixed proportion is 1：3 to 2：1.
Further, the difference in height between seed of single crystal silicon described in each two is respectively less than 1mm.
Further, the coating method of the binding agent is：Coated upwards from the lower end of the Mosaic face, and after coating
The height of binding agent is the 20%-100% of the height of the Mosaic face.
Further, the seed of single crystal silicon for being coated with the binding agent by predeterminated position successively in a horizontal operation
The step of splicing on platform includes：Two seed of single crystal silicon spliced are extruded, so that the two seed of single crystal silicon splicings are close.
Further, before the step of standing preset time, methods described includes：It is small that inculating crystal layer is placed on humidity
In 50% interior.
Further, the preset time is 600s-3600s.
Further, it is described successively before the step of Mosaic face coated with adhesive of each seed of single crystal silicon, the side
Method includes：Each seed of single crystal silicon is rinsed.
Further, the four edges of the inculating crystal layer are equal with the distance of corresponding crucible internal walls.
Further, the surface roughness of the horizontal table is less than 0.2mm.
Brief description of the drawings
Fig. 1 is the flow chart of the seed of single crystal silicon joining method in first embodiment of the invention；
Fig. 2 is cross-sectional view of the seed of single crystal silicon on horizontal table in first embodiment of the invention；
Fig. 3 is overlooking the structure diagram of the inculating crystal layer in crucible in first embodiment of the invention.
Main element symbol description：
Following embodiment will combine above-mentioned accompanying drawing and further illustrate the present invention.
Embodiment
For the ease of understanding the present invention, the present invention is described more fully below with reference to relevant drawings.In accompanying drawing
Give several embodiments of the present invention.But the present invention can realize in many different forms, however it is not limited to herein
Described embodiment.On the contrary, the purpose for providing these embodiments is made to the disclosure more thorough and comprehensive.
Unless otherwise defined, all of technologies and scientific terms used here by the article is with belonging to technical field of the invention
The implication that technical staff is generally understood that is identical.Term used in the description of the invention herein is intended merely to description tool
The purpose of the embodiment of body, it is not intended that in the limitation present invention.Term as used herein " and/or " include one or more phases
The arbitrary and all combination of the Listed Items of pass.
Embodiment one
Refer to Fig. 1 to Fig. 3, a kind of joining method for seed of single crystal silicon that first embodiment of the invention provides, including step
Rapid S01 and step S02.
Step S01, successively in the Mosaic face coated with adhesive of each seed of single crystal silicon 10, then it is coated with the bonding
The seed of single crystal silicon 10 of agent 30 is spliced on horizontal table 20 of the surface roughness less than 0.2mm successively by predeterminated position,
To form an inculating crystal layer 100.
Specifically, in the present embodiment, 36 pieces of seed of single crystal silicon 10 are selected in advance, between seed of single crystal silicon described in each two
Difference in height be respectively less than 1mm, the Mosaic face of this 36 pieces of seed of single crystal silicon 10 is applied be covered with binding agent 30 successively, and by 6 × 6 side
Formula successively splices 36 pieces of seed of single crystal silicon 10, to be formed with inculating crystal layer 100.
It should be understood that before having selected the seed of single crystal silicon 10, each seed of single crystal silicon 10 can be carried out
Rinse, to remove dirt and dust on the surface of seed of single crystal silicon 10.
Specifically, in the present embodiment, the key component of the binding agent 30 includes Ludox and vitrified bonding mixes
Thing, Ludox are 1 with vitrified bonding mixed proportion：3, Ludox is nano level silica dioxide granule in water or in solvent
Dispersion liquid.Because the SiO2 in Ludox contains substantial amounts of water and hydroxyl, therefore Ludox can also be expressed as mSiO2.nH2O；
Preparing Ludox has different approach.The most frequently used method has ion-exchange, the one-step hydrolysis method of silica flour one, silane hydrolyzate method etc..
Wherein, its main component of vitrified bonding is the quartz sand (silica) that particle is small, hardness is high, and cement, glue
Powder.He is a kind of ethene/vinyl laurate/vinyl chloride ternary polymerization rubber powder for meeting the redispersible hydrophobicity of water；Its is main
Effect be binding agent be in it is new mix state when, there is scattered and bleed effect, thus can improver workability；Make the guarantor of agent
Water-based enhancing, so that cement can carry out aquation within a very long time, more fully aquation formation obtains agent higher
It is strong；In addition, rubber powder disperses rear film forming and plays humidification as second of adhesive, as reinforcing material distribution and entirely
In agent system, therefore add the cohesive force of agent；And contraction fissure can be bridged, serve fine sealing process.
It should be understood that during monocrystalline ingot casting, part inculating crystal layer can melt, and be filled in the seed crystal gap of melt portions
The corresponding binding agent at place can also melt, but the key component of Ludox and vitrified bonding is silica, and titanium dioxide
The activity of silicon is high, it is easy to and pasc reaction, silicon and free oxygen are generated, so the use of silica sol binder will not produce impurity shape
Core center.
Specifically, the coating method of the binding agent 30 is：Coated upwards from the lower end of the Mosaic face, and after coating
The height of binding agent 30 for the Mosaic face height can with 20%, it is in one embodiment of the invention, viscous after coating
The height for tying agent 30 is the 20%-100% of the height of the Mosaic face.
Specifically, in the present embodiment one, the seed of single crystal silicon for being coated with the binding agent is by predeterminated position
Include successively in the step of splicing on a horizontal table 20：Two seed of single crystal silicon 10 spliced are extruded, so that two institutes
Seed of single crystal silicon 10 is stated to splice closely.
Step S02, after standing preset time, the inculating crystal layer 100 is put into the bottom of crucible 40 by mechanical hand.
The inculating crystal layer 100 spliced is stood into 600s, so that the binding agent 30 is solid, finally makes 36 pieces of seed of single crystal silicon
10 are spliced into firm inculating crystal layer 100, and inculating crystal layer 100 then is placed on into crucible 40 by the manipulator (figure does not mark)
Bottom, the inculating crystal layer 100 need to be equal with the distance of corresponding crucible internal walls in the position of the bottom of crucible 40 so that after
Continue during reaching ingot casting, the monocrystalline silicon of the surrounding of inculating crystal layer 100 keeps symmetrical in oriented growth.
Will be specifically, in the present embodiment, one end of the manipulator be connected with a control device (figure does not mark), described
Control device works for control machinery hand, it is possible to understand that, because inculating crystal layer 100 is spliced by multiple seed of single crystal silicon 10
Into its surface is relatively smooth smooth, can be by setting multiple suckers in the free terminal of the manipulator, and multiple suckers are used for solid
Determine inculating crystal layer 100, specifically, the number of sucker can be adjusted accordingly according to the size of sucker, suction is big if sucker is big, can
Less sucker is set, and suction is small if sucker is small, then needs to set multiple suckers, it is possible to understand that, fixed by sucker described in
Inculating crystal layer 100, compared to hard fixture, inculating crystal layer 100 can be avoided damage to.
Specifically, in one embodiment of the invention, before the step of standing preset time, first by inculating crystal layer
100 are placed on the interior that a humidity is less than 50%, specifically, humidity, refers to air humidity, it is containing for water vapor in air
Amount；Not very in humidity, not steam-laden air is referred to as dry air for ambient liquid or the water of solid-state, in general atmosphere
Vapor can be with 0% to the 4% of duty air volume.
The joining method of above-mentioned seed of single crystal silicon, the Mosaic face of adjacent two seed of single crystal silicon 101 is glued by binding agent 30
Knot together, and stands preset time, so that binding agent 30 is solid, and then multiple seed of single crystal silicon 10 is formed with inculating crystal layer
100, then inculating crystal layer 100 is put into the bottom of crucible 40, the binding agent between the Mosaic face of seed of single crystal silicon 10, both play Binder Phase
The effect of adjacent two seed of single crystal silicon 0, can eliminate the splicing gap between adjacent two seed of single crystal silicon 10, avoid because of splicing seams again
Defect caused by gap, improve the quality of monocrystalline silicon finished product.
Embodiment two
A kind of joining method for seed of single crystal silicon that second embodiment of the invention provides, including step S11 and step S12.
Step S11,49 pieces of seed of single crystal silicon 10 are selected, coat bonding in the Mosaic face of each seed of single crystal silicon 10 successively
Agent, the seed of single crystal silicon 10 for being then coated with the binding agent 30 are less than in a surface roughness successively in the way of 7 × 7
49 pieces of seed of single crystal silicon 10 are spliced on 0.2mm horizontal table 20, to be formed with inculating crystal layer 100.
Specifically, in the present embodiment, the key component of the binding agent 30 includes Ludox and vitrified bonding mixes
Thing, Ludox are 1 with vitrified bonding mixed proportion：1.
Step S12, after standing 3600s, the inculating crystal layer 100 is put into the bottom of crucible 40 by mechanical hand.
Embodiment three,
A kind of joining method for seed of single crystal silicon that third embodiment of the invention provides, including step S21 and step S22.
Step S21,25 pieces of seed of single crystal silicon 10 are selected, coat bonding in the Mosaic face of each seed of single crystal silicon 10 successively
Agent, the seed of single crystal silicon 10 for being then coated with the binding agent 30 are less than in a surface roughness successively in the way of 5 × 5
25 pieces of seed of single crystal silicon 10 are spliced on 0.2mm horizontal table 20, to be formed with inculating crystal layer 100.
Specifically, in the present embodiment, the key component of the binding agent 30 includes Ludox and vitrified bonding mixes
Thing, Ludox are 2 with vitrified bonding mixed proportion：1.
Step S22, after standing 1800s, the inculating crystal layer 100 is put into the bottom of crucible 40 by mechanical hand.
In conjunction with the embodiments one, embodiment two, embodiment three are understood, the key component of the binding agent 30 include Ludox and
The scope of ceramic bonding agent composition, Ludox and vitrified bonding mixed proportion is 1：3 to 2：1.
Embodiment described above only expresses the several embodiments of the present invention, and its description is more specific and detailed, but simultaneously
Therefore the limitation to the scope of the claims of the present invention can not be interpreted as.It should be pointed out that for one of ordinary skill in the art
For, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the guarantor of the present invention
Protect scope.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (10)
- A kind of 1. joining method of seed of single crystal silicon, it is characterised in that including：Successively in the Mosaic face coated with adhesive of each seed of single crystal silicon, the seed of single crystal silicon of the binding agent is then coated with Splice successively on a horizontal table by predeterminated position, to form an inculating crystal layer；After standing preset time, the inculating crystal layer is put into the bottom of a crucible by mechanical hand.
- 2. the joining method of seed of single crystal silicon according to claim 1, it is characterised in that the key component of the binding agent Including Ludox and ceramic bonding agent composition, the scope of Ludox and vitrified bonding mixed proportion is 1：3 to 2：1.
- 3. the joining method of seed of single crystal silicon according to claim 1, it is characterised in that seed of single crystal silicon described in each two Between difference in height be respectively less than 1mm.
- 4. the joining method of seed of single crystal silicon according to claim 1, it is characterised in that the coating method of the binding agent For：Coated upwards from the lower end of the Mosaic face, and the height of the binding agent after coating is the 20%- of the height of the Mosaic face 100%.
- 5. the joining method of seed of single crystal silicon according to claim 1, it is characterised in that described to be coated with the bonding The seed of single crystal silicon of agent is included in the step of splicing on a horizontal table successively by predeterminated position：Extrude described in two spliced Seed of single crystal silicon, so that the two seed of single crystal silicon splicings are close.
- 6. the joining method of seed of single crystal silicon according to claim 1, it is characterised in that the step for standing preset time Before rapid, methods described includes：Inculating crystal layer is placed on interior of the humidity less than 50%.
- 7. the joining method of seed of single crystal silicon according to claim 1, it is characterised in that the preset time is 600s- 3600s。
- 8. the joining method of seed of single crystal silicon according to claim 1, it is characterised in that described successively in each monocrystalline silicon Before the step of Mosaic face coated with adhesive of seed crystal, methods described includes：Each seed of single crystal silicon is rinsed.
- 9. the joining method of seed of single crystal silicon according to claim 1, it is characterised in that the four edges of the inculating crystal layer with The distance of corresponding crucible internal walls is equal.
- 10. the joining method of seed of single crystal silicon according to claim 1, it is characterised in that the table of the horizontal table Surface roughness is less than 0.2mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710824128.3A CN107740192A (en) | 2017-09-13 | 2017-09-13 | Seed of single crystal silicon joining method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710824128.3A CN107740192A (en) | 2017-09-13 | 2017-09-13 | Seed of single crystal silicon joining method |
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| CN107740192A true CN107740192A (en) | 2018-02-27 |
Family
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| CN201710824128.3A Pending CN107740192A (en) | 2017-09-13 | 2017-09-13 | Seed of single crystal silicon joining method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111624460A (en) * | 2020-06-28 | 2020-09-04 | 西安奕斯伟硅片技术有限公司 | Method for detecting defect distribution area of monocrystalline silicon |
| CN111647941A (en) * | 2020-06-01 | 2020-09-11 | 苏州阿特斯阳光电力科技有限公司 | Seed crystal laying method, preparation method of mono-like silicon ingot and mono-like silicon ingot prepared by same |
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| CN102362016A (en) * | 2009-01-30 | 2012-02-22 | Amg艾迪卡斯特太阳能公司 | Seed layers and process of manufacturing seed layers |
| CN103952756A (en) * | 2014-05-08 | 2014-07-30 | 江西赛维Ldk太阳能高科技有限公司 | Bonding and splicing method of seed crystals for monocrystal silicon-like cast ingots and crucible for casting ingot |
| CN104775148A (en) * | 2015-04-15 | 2015-07-15 | 南通大学 | Seed crystal splicing method for monocrystalline-like silicon cast ingot |
| CN104790026A (en) * | 2015-04-30 | 2015-07-22 | 江西赛维Ldk太阳能高科技有限公司 | Reutilization method of seed crystals for casting monocrystals |
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2017
- 2017-09-13 CN CN201710824128.3A patent/CN107740192A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102362016A (en) * | 2009-01-30 | 2012-02-22 | Amg艾迪卡斯特太阳能公司 | Seed layers and process of manufacturing seed layers |
| CN103952756A (en) * | 2014-05-08 | 2014-07-30 | 江西赛维Ldk太阳能高科技有限公司 | Bonding and splicing method of seed crystals for monocrystal silicon-like cast ingots and crucible for casting ingot |
| CN104775148A (en) * | 2015-04-15 | 2015-07-15 | 南通大学 | Seed crystal splicing method for monocrystalline-like silicon cast ingot |
| CN104790026A (en) * | 2015-04-30 | 2015-07-22 | 江西赛维Ldk太阳能高科技有限公司 | Reutilization method of seed crystals for casting monocrystals |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111647941A (en) * | 2020-06-01 | 2020-09-11 | 苏州阿特斯阳光电力科技有限公司 | Seed crystal laying method, preparation method of mono-like silicon ingot and mono-like silicon ingot prepared by same |
| CN111647941B (en) * | 2020-06-01 | 2022-08-12 | 苏州阿特斯阳光电力科技有限公司 | Seed crystal laying method, preparation method of mono-like silicon ingot and mono-like silicon ingot prepared by same |
| CN111624460A (en) * | 2020-06-28 | 2020-09-04 | 西安奕斯伟硅片技术有限公司 | Method for detecting defect distribution area of monocrystalline silicon |
| CN111624460B (en) * | 2020-06-28 | 2022-10-21 | 西安奕斯伟材料科技有限公司 | Method for detecting defect distribution area of monocrystalline silicon |
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Application publication date: 20180227 |