CN107739021B - A kind of pattern drawing method of micro/nano-scale - Google Patents

A kind of pattern drawing method of micro/nano-scale Download PDF

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Publication number
CN107739021B
CN107739021B CN201710994011.XA CN201710994011A CN107739021B CN 107739021 B CN107739021 B CN 107739021B CN 201710994011 A CN201710994011 A CN 201710994011A CN 107739021 B CN107739021 B CN 107739021B
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substrate
nano
micro
needle point
sputtering
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CN107739021A (en
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张利胜
李新娟
刘彦齐
王培杰
方炎
李志鹏
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Capital Normal University
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Capital Normal University
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C3/00Assembling of devices or systems from individually processed components
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)

Abstract

The invention discloses a kind of pattern drawing methods of micro/nano-scale, comprising: noble metal clad is sputtered on the needle point of nanoscale by magnetic control sputtering device;Noble metal film is sputtered on silicon wafer by magnetic control sputtering device as substrate, or using single-layer graphene as substrate;Photosensitive molecular is adsorbed on the substrate, is subsequently placed on objective table;The fixed needle point, adjust the incident laser of laser, make the incident laser radiation at the needle point tip, the local surface phasmon generated using needle point, it acts on photosensitive molecular and generates reactant, the position of photosensitive molecular is adjusted by objective table, so that the reactant for preferably controlling photosensitive molecular forms the shape and process of the figure of micro/nano-scale.

Description

A kind of pattern drawing method of micro/nano-scale
Technical field
The present invention relates to technical field of micro and nano fabrication, more particularly to a kind of pattern drawing method of micro/nano-scale.
Background technique
Micro-nano technology refers to processing scale in the processing method of micron and Nano grade range.Micro-nano technology technology was once It is widely used in the processing and fabricating of large scale integrated circuit, so that microelectronic component and the relevant technologies and industry are surging forward.
Currently, micro-nano technology technology extraordinary new device, electronic component and electronic device, machine components and device, Surface analysis, material modification etc. play the effect to become more and more important.The research of micro-nano technology technology is got in related fields Come more, it is desirable that it is higher and higher, need to be continuously improved micro-nano technology degree of controllability.
Summary of the invention
The purpose of the present invention is to provide a kind of pattern drawing method of micro/nano-scale, whole figure drawing process have compared with Good controllability.
To achieve the above object, the present invention provides a kind of pattern drawing method of micro/nano-scale, comprising:
Noble metal clad is sputtered on the needle point of nanoscale by magnetic control sputtering device;
Noble metal film is sputtered on silicon wafer by magnetic control sputtering device as substrate, or using single-layer graphene as base Bottom;
Photosensitive molecular is adsorbed on the substrate, is subsequently placed on objective table;
The fixed needle point, adjusts the incident laser of laser, makes the incident laser radiation at the needle point tip, produces Raw local surface phasmon;
The objective table is adjusted, so that the substrate is located at the needle point front end, makes the photosensitive molecular in the local table Reactant is generated under the action of the phasmon of face;
The objective table is adjusted, is made mobile according to preset pattern by the position of the laser irradiation in the substrate.
Preferably, the needle point of the nanoscale is the needle point of the probe of scanning probe microscopy.
Preferably, the noble metal is gold, silver or platinum;Your gold is sputtered on the needle point of nanoscale by magnetic control sputtering device Belong to the vacuum that clad includes: the magnetic control sputtering device in sputtering and be calculated as 1.0Pa, flow is calculated as 24sccm, and sputtering current is 0.15mA, sputtering time 100s.
Preferably, sputtering golden film or silverskin as substrate on silicon wafer by magnetic control sputtering device includes:
Vacuum is calculated as 1.0Pa when sputtering, and flow is calculated as 24sccm, sputtering current 0.1mA, sputtering time 20s-90s.
Preferably, include: using single-layer graphene as substrate
The single-layer graphene is prepared using chemical vapor deposition CVD method, wherein ratio of gas mixture is CH4:H2=1: 1, growth temperature is 1030 DEG C.
Preferably, absorption photosensitive molecular includes: on the substrate
By spin coating, immersion method by the photosensitive molecular uniform adsorption on the substrate, wherein using sputter it is expensive The molecular concentration of the photosensitive molecular is 10 when the substrate that metallic film obtains-3Mol/L, when using single-layer graphene as substrate The molecular concentration of the photosensitive molecular is 10-2mol/L。
Preferably, on the substrate absorption photosensitive molecular include: under conditions of dark surrounds or only feux rouges into Row.
Preferably, the photosensitive molecular includes p-Mercaptoaniline PATP or nitro thiophenol 4NBT molecule, the product For dimethylaminobenzaldehyde DMAB.
Preferably, the above method is applied in TERS (Tip-Enhanced Raman Spectroscopy) system, with the sputtering noble metal packet Needle point of the needle point as the TERS system after coating is also wrapped using the TERS systematic sample platform as the objective table It includes:
When a certain position of laser irradiation, whether generated instead using the photosensitive molecular of position described in TERS spectral detection Answer object;
If the instruction of TERS spectrum generates the reactant, adjusting the sample stage makes described laser irradiation the next position.
Compared with prior art, in the pattern drawing method of micro/nano-scale provided by the invention, laser irradiation needle point is utilized The local surface phasmon of generation acts on photosensitive molecular and generates reactant, the position of photosensitive molecular is adjusted by objective table, To preferably control the shape and process that the reactant of photosensitive molecular forms the figure of micro/nano-scale.
Detailed description of the invention
Fig. 1 is a kind of flow chart of the pattern drawing method of micro/nano-scale provided in an embodiment of the present invention.
Specific embodiment
In the accompanying drawings, same or similar element is indicated using same or similar label or there is same or like function Element.The embodiment of the present invention is described in detail with reference to the accompanying drawing.
In the description of the present invention, term " center ", " longitudinal direction ", " transverse direction ", "front", "rear", "left", "right", "vertical", The orientation or positional relationship of the instructions such as "horizontal", "top", "bottom" "inner", "outside" is that orientation based on the figure or position are closed System, is merely for convenience of description of the present invention and simplification of the description, rather than the device or element of indication or suggestion meaning must have Specific orientation is constructed and operated in a specific orientation, therefore should not be understood as limiting the scope of the invention.
Fig. 1 shows a kind of flow chart of the pattern drawing method of micro/nano-scale provided in an embodiment of the present invention.
As shown in Figure 1, comprising:
Step 101, noble metal clad is sputtered on the needle point of nanoscale by magnetic control sputtering device.
The needle point of the nanoscale can be the needle point of the probe of scanning probe microscopy, the diameter of the needle point about 20 ~50nm.
The noble metal can be gold, silver or platinum.
By magnetic control sputtering device when sputtering noble metal clad on the needle point of nanoscale and including: in sputtering the magnetic control The vacuum of sputter is calculated as 1.0Pa, and flow is calculated as 24sccm, sputtering current 0.15mA, sputtering time 100s.
Step 102, noble metal film is sputtered on silicon wafer by magnetic control sputtering device as substrate, or with single-layer graphene As substrate.
When using noble metal film as substrate, using magnetic control sputtering device on clean silicon wafer gold-plated or silverskin, it is different The noble metal film of thickness can be obtained by adjusting sputtering current in sputtering process and sputtering time.Vacuum is calculated as when sputtering 1.0Pa, flow are calculated as 24sccm, sputtering current 0.1mA.The thickness of noble metal film can be controlled by sputtering time.Example Such as, sputtering time is 20s acquisition metallic film with a thickness of 2nm;70s is 4nm;90s is 7nm.
When using single-layer graphene as substrate, graphene is prepared using CVD (chemical vapor deposition) method, the preparation In the process, the flow of hydrogen and methane in strict control different stages of growth is needed, to obtain the single-layer graphene of high quality. Preferably, ratio of gas mixture CH4:H2=1:1, growth temperature are 1030 DEG C.
Step 103, photosensitive molecular is adsorbed on the substrate, is subsequently placed on objective table.
Absorption photosensitive molecular includes: on the substrate
By spin coating, immersion method by the photosensitive molecular uniform adsorption on the substrate, wherein using sputter it is expensive The molecular concentration of the photosensitive molecular is 10 when the substrate that metallic film obtains-3Mol/L, when using single-layer graphene as substrate The molecular concentration of the photosensitive molecular is 10-2mol/L.In order to avoid molecule reacts before experiment starts, it is preferred that should Adsorption process needs carry out under conditions of dark surrounds or only feux rouges.
The photosensitive molecular includes PATP (p-Mercaptoaniline) or 4NBT (nitro thiophenol) molecule, the product are DMAB (dimethylaminobenzaldehyde).
Step 104, the fixed needle point, adjusts the incident laser of laser, makes the incident laser radiation in the needle Sharp end generates local surface phasmon.
In the step, laser is accurately radiated to the tip of needle point, it is ensured that laser and needle point reach best Couple state generates local surface phasmon.
The wavelength of the laser can be 488nm, 532nm, 633nm, 785nm etc..
Step 105, the objective table is adjusted, so that the substrate is located at the needle point front end, makes the photosensitive molecular in institute State the lower generation reactant of local surface phasmon effect.
Step 106, the objective table is adjusted, makes to be moved by the position of the laser irradiation according to preset pattern in the substrate It is dynamic.
Preferably, method shown in Fig. 1 is applied in TERS (Tip-Enhanced Raman Spectroscopy) system, with the sputtering noble metal Needle point of the needle point as the TERS system after clad, using the TERS systematic sample platform as the objective table, this When, this method further include:
When a certain position of laser irradiation, whether generated instead using the photosensitive molecular of position described in TERS spectral detection Answer object;
If the instruction of TERS spectrum generates the reactant, adjusting the sample stage makes described laser irradiation the next position; Otherwise, continue to irradiate.
Preferably, one layer of very thin PMMA can be covered in the sample surfaces after graphing and retain figure, to carve again Molecular modeling.Micro-nano graph has important answer in the fields such as nanometer is anti-fake, nanosecond medical science, nano spectral and micro-nano technology With value.
In the pattern drawing method of micro/nano-scale provided by the invention, the local surface etc. of laser irradiation needle point generation is utilized It from excimer, acts on photosensitive molecular and generates reactant, the position of photosensitive molecular is adjusted by objective table, to preferably control light The reactant of sensitive molecule forms the shape and process of the figure of micro/nano-scale.
Finally it is noted that the above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations.This The those of ordinary skill in field is it is understood that be possible to modify the technical solutions described in the foregoing embodiments or right Part of technical characteristic is equivalently replaced;These are modified or replaceed, and it does not separate the essence of the corresponding technical solution originally Invent the spirit and scope of each embodiment technical solution.

Claims (9)

1. a kind of pattern drawing method of micro/nano-scale characterized by comprising
Noble metal clad is sputtered on the needle point of nanoscale by magnetic control sputtering device;
Noble metal film is sputtered on silicon wafer by magnetic control sputtering device as substrate, or using single-layer graphene as substrate;
Photosensitive molecular is adsorbed on the substrate, and then the substrate is placed on objective table;
The fixed needle point, adjusts the laser of laser transmitting, makes the laser irradiation at the needle point tip, generates local table Face phasmon;
The objective table is adjusted, so that the substrate is located at the needle point front end, makes the photosensitive molecular in described local surface etc. From generating reactant under the action of excimer;
The objective table is adjusted, is made mobile according to preset pattern by the position of the laser irradiation in the substrate.
2. the pattern drawing method of micro/nano-scale as described in claim 1, which is characterized in that the needle point of the nanoscale is The needle point of the probe of scanning probe microscopy, diameter are 20~50nm.
3. the pattern drawing method of micro/nano-scale as described in claim 1, which is characterized in that the noble metal be gold, silver or Platinum;
By magnetic control sputtering device when sputtering noble metal clad on the needle point of nanoscale and including: in sputtering the magnetron sputtering The vacuum of instrument is calculated as 1.0Pa, and flow is calculated as 24sccm, sputtering current 0.15mA, sputtering time 100s.
4. the pattern drawing method of micro/nano-scale as described in claim 1, which is characterized in that by magnetic control sputtering device in silicon wafer Upper sputtering golden film or silverskin include: as substrate
Vacuum is calculated as 1.0Pa when sputtering, and flow is calculated as 24sccm, sputtering current 0.1mA, sputtering time 20s-90s.
5. the pattern drawing method of micro/nano-scale as described in claim 1, which is characterized in that using single-layer graphene as substrate Include:
The single-layer graphene is prepared using chemical vapor deposition (CVD) method, wherein ratio of gas mixture is CH4:H2=1:1, Growth temperature is 1030 DEG C.
6. the pattern drawing method of micro/nano-scale as described in claim 1, which is characterized in that adsorb on the substrate photosensitive Molecule includes:
By spin coating, immersion method by the photosensitive molecular uniform adsorption on the substrate, wherein using sputtering noble metal The molecular concentration of the photosensitive molecular is 10 when the substrate that film obtains-3Mol/L, when using single-layer graphene as substrate described in The molecular concentration of photosensitive molecular is 10-2mol/L。
7. the pattern drawing method of micro/nano-scale as described in claim 1 or 6, which is characterized in that adsorb on the substrate Photosensitive molecular includes: to carry out under conditions of dark surrounds or only feux rouges.
8. the pattern drawing method of micro/nano-scale as described in claim 1, which is characterized in that the photosensitive molecular includes to mercapto Base aniline (PATP) or nitro thiophenol (4NBT) molecule, the reactant are dimethylaminobenzaldehyde (DMAB).
9. the pattern drawing method of micro/nano-scale as described in claim 1, which is characterized in that be applied to pinpoint enhanced Raman light In (TERS) system of composing, using the needle point after the sputtering noble metal clad as the Tip-Enhanced Raman Spectroscopy (TERS) system The needle point of system, using the Tip-Enhanced Raman Spectroscopy (TERS) systematic sample platform as the objective table, further includes:
When a certain position of laser irradiation, whether generated instead using the photosensitive molecular of a certain position described in TERS spectral detection Answer object;
If the instruction of TERS spectrum generates the reactant, adjusting the sample stage makes described laser irradiation the next position.
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105510640A (en) * 2015-11-27 2016-04-20 武汉大学 Metal nanowire surface plasmon nano light source-based optical microscope
CN105973868A (en) * 2016-05-09 2016-09-28 西北工业大学 Optical fiber vector optical probe type tip-enhanced Raman spectroscopy and spectrum collection method

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US9910066B2 (en) * 2014-05-25 2018-03-06 Horiba Instruments, Inc. Systems and methods for non-destructive surface chemical analysis of samples
US9568495B2 (en) * 2015-05-20 2017-02-14 AIST-NT, Inc. Systems and methods for non-destructive surface chemical analysis of samples

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105510640A (en) * 2015-11-27 2016-04-20 武汉大学 Metal nanowire surface plasmon nano light source-based optical microscope
CN105973868A (en) * 2016-05-09 2016-09-28 西北工业大学 Optical fiber vector optical probe type tip-enhanced Raman spectroscopy and spectrum collection method

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