CN104897643B - Germanium and silicon heterogeneous hierarchy array of silver and its production and use - Google Patents
Germanium and silicon heterogeneous hierarchy array of silver and its production and use Download PDFInfo
- Publication number
- CN104897643B CN104897643B CN201510257621.2A CN201510257621A CN104897643B CN 104897643 B CN104897643 B CN 104897643B CN 201510257621 A CN201510257621 A CN 201510257621A CN 104897643 B CN104897643 B CN 104897643B
- Authority
- CN
- China
- Prior art keywords
- array
- silicon
- micron
- silver
- prisms
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
Abstract
The invention discloses silver-colored germanium and silicon heterogeneous hierarchy array of one kind and its production and use.Array is silicon six array of prisms of micron of Hexagonal array, and being equipped with its surface modification on silicon six prisms of micron for silicon six array of prisms of micron for constituting Hexagonal array has the germanium nanocone of silver nano-grain；Method is that nickel nitrate solution and graphene oxide solution are first mixed to obtain into mixed liquor, silicon six array of prisms of micron of the Hexagonal array obtained using photoetching and deep silicon etching technology are placed in mixed liquor again and soaked, obtaining its surface modification has silicon six array of prisms of micron of Hexagonal array of nickel nitrate, afterwards, silicon six array of prisms of micron for first having the Hexagonal array of nickel nitrate to its surface modification use chemical vapour deposition technique deposit Germanium nanocone thereon, silicon six array of prisms of micron that the Hexagonal array of germanium nanocone will be equipped with thereon again are placed in immersion in silver nitrate solution, purpose product is made.It can as SERS active substrate, be widely used in the quick detection in the fields such as environment, chemistry, biology.
Description
Technical field
The present invention relates to a kind of heterogeneous hierarchy array and preparation method and purposes, especially a kind of silver-Si1-xGe x is heterogeneous
Hierarchy array and its production and use.
Background technology
SERS (SERS) technology has the characteristics such as high sensitivity and " fingerprint recognition ", in trace molecules
There is obvious advantage in quick detection, therefore be with a wide range of applications in fields such as environment, chemistry, biologies.Using
The key of SERS technologies is to prepare high performance SERS substrates, i.e. SERS activity height, signal uniformity and signal favorable repeatability
Substrate.At present, it is to obtain high-performance SERS substrates by noble metal nano particles modification in the uniform nanostructured surface of pattern
One of technical way.The uniform nanostructured of pattern not only facilitates being evenly distributed for noble metal nano particles, makes
SERS signal favorable repeatability, can also carry more noble metal nano particles and adsorb more thing to be detected, have it
There is higher SERS activity, it is easy to apply the quick trace detection occasion in some pollutants.Germanium (Ge) nano material has life
Thing compatibility, stability and the low feature of growth temperature, are widely used in photoelectricity, the energy, biology, medicine and other fields.Base
In factors above, people have carried out some good tries and effort, such as entitled " Two-step-route to Ag-Au
Nanoparticles grafted on Ge wafer for extra-uniform SERS substrates ",
J.Mater.Chem.C2015,3,559-563 (" the super uniform SERS linings of germanium wafer of two-step method synthesis silver-gold nano grain grafting
Bottom ",《Materials chemistry magazine》C volume, 2015 volume 3 page 559~563) article.The preparation method referred in this article is first
By germanium wafer 10-410min is soaked in M silver nitrate solution, is cleaned respectively with deionized water and ethanol after taking-up, nitrogen blows
It is dry, then by it 10-4Soak after 1min and take out in M chlorauric acid solution, cleaned respectively with deionized water and ethanol, nitrogen blows
Dry, obtaining grafting has the germanium wafer of silver-gold nano grain.This product is used for organic matter as surface enhanced Raman scattering substrate
Detection when, though have the characteristics of pattern is uniform, signal is reproducible, but also exist shortcoming part, first, be used as substrate
Germanium wafer is only two-dimensional structure, causes its surface area smaller, and the noble metal nano particles that result in carrying are less and be unfavorable for pair
A large amount of absorption of thing to be detected；Secondly, preparation method can not obtain the substrate with higher SERS activity.
The content of the invention
The technical problem to be solved in the present invention has to overcome shortcoming part of the prior art there is provided one kind is rational in infrastructure
There is the heterogeneous hierarchy array of silver-Si1-xGe x of higher SERS activity.
The invention solves the problems that another technical problem to provide a kind of above-mentioned heterogeneous hierarchy array of silver-Si1-xGe x
Preparation method.
The invention solves the problems that another technical problem to provide a kind of above-mentioned heterogeneous hierarchy array of silver-Si1-xGe x
Purposes.
For solve the present invention technical problem, the technical scheme used for：The heterogeneous hierarchy array bag of silver-Si1-xGe x
Germanium and silver nano-grain are included, particularly,
The heterogeneous hierarchy array is silicon six array of prisms of micron of Hexagonal array, the silicon of the composition Hexagonal array
Germanium nanocone is equipped with silicon six prisms of micron of six array of prisms of micron, the surface modification of the germanium nanocone has silver nanoparticle
Grain；
The inscribed circle diameter of the silicon six prisms of micron is 3~5 μm, pillar height is 11~15 μm；
The mid diameter of the germanium nanocone is 180~220nm, bores a length of 1.8~2.2 μm；
The particle diameter of the silver nano-grain is 35~140nm.
It is used as the further improvement of the heterogeneous hierarchy array of silver-Si1-xGe x：
Preferably, the adjacent intercolumniation of six prisms of silicon micron is 3~5 μm.
Preferably, the adjacent particle spacing of silver nano-grain is 2~12nm.
For solve the present invention another technical problem, another technical scheme used for：Above-mentioned silver-Si1-xGe x is different
It is as follows that the preparation method of matter hierarchy array includes local reduction way, particularly key step：
Step 1, first by 81~101g/L nickel nitrate (Ni (NO3)2) solution and 1.8~2.2g/L graphene oxide
(GO) solution is 1 according to volume ratio：1 ratio mixing, obtains mixed liquor, then will use what photoetching and deep silicon etching technology were obtained
Silicon six array of prisms of micron of Hexagonal array, which are placed in mixed liquor, soaks at least 25min, and obtaining its surface modification has nickel nitrate
Silicon six array of prisms of micron of Hexagonal array；
Step 2, it is 85 silicon six array of prisms of micron that its surface modification has the Hexagonal array of nickel nitrate first to be placed in into flow
In~95mL/min deposition atmosphere, in chemical vapor deposition at least 30min at 280~320 DEG C, wherein, deposition atmosphere is by germanium
Alkane, hydrogen and argon gas are 0.9~1.1 according to volume ratio:17~21:40 ratio is mixed, and germanium nanometer is equipped with thereon
Silicon six array of prisms of micron of the Hexagonal array of cone, then the silicon micron six prisms battle array of the Hexagonal array of germanium nanocone will be equipped with thereon
Row are placed in 10-2~10-4Mol/L silver nitrate (AgNO3) 6~12min is soaked in solution, the heterogeneous hierarchy of silver-Si1-xGe x is made
Array.
It is used as the further improvement of the preparation method of the heterogeneous hierarchy array of silver-Si1-xGe x：
Preferably, before chemical vapor deposition, first the furnace chamber and gas circuit of chemical vapor deposition carried out vacuumizing successively and
Use argon purge.
Preferably, before chemical vapor deposition, the furnace chamber of chemical vapor deposition is made to be under argon atmospher, and with 10 DEG C/min
Heating rate rise to 290~330 DEG C by room temperature.
For solve the present invention another technical problem, another technical scheme used for：Above-mentioned silver-Si1-xGe x is different
The purposes of matter hierarchy array is,
Using the heterogeneous hierarchy array of silver-Si1-xGe x as the active substrate of SERS, LR laser raman is used
Rhodamine (R6G) or the content of Polychlorinated biphenyls (PCB-2) that spectrometer measurement adheres to thereon.
It is used as the further improvement of the purposes of the heterogeneous hierarchy array of silver-Si1-xGe x：
Preferably, the excitation wavelength of laser Raman spectrometer is 532nm, power output when being 0.02~0.04mW, integration
Between be 5~25s.
Beneficial effect relative to prior art is：
First, being surveyed respectively using ESEM, transmission electron microscope and the subsidiary power spectrum of transmission electron microscope to obtained purpose product
Examination instrument is characterized, from its result, and purpose product is silicon six array of prisms of micron of Hexagonal array, constitutes Hexagonal array
Being equipped with its surface modification on silicon six prisms of micron of silicon six array of prisms of micron has the germanium nanocone of silver nano-grain；Wherein, silicon
The inscribed circle diameter of six prisms of micron is 3~5 μm, pillar height is 11~15 μm, and the adjacent intercolumniation of silicon six prisms of micron is 3~5 μ
M, the mid diameter of germanium nanocone is 180~220nm, bores a length of 1.8~2.2 μm, the particle diameter of silver nano-grain for 35~
140nm, the adjacent particle spacing of silver nano-grain is 2~12nm.This germanium nanocone for having silver nano-grain by surface modification
The purpose product being assembled on silicon six prisms of micron and into oldered array it by Hexagonal array is placed in, both due to silicon six ribs of micron
Post not only ensure that the homogeneity of underlying structure by Hexagonal array, also substantially increase specific surface area；Again because of silicon micron six
The high density germanium nanocone that is equipped with prism and further increase the specific surface area of substrate and fully played semiconductor
The Chemical enhancement SERS effects that germanium has；Due also to the silver nano-grain of germanium nanometer poppet surface high density modification and greatly improve
The SERS activity of substrate；More because producing purpose six prisms of silicon micron, germanium nanocone and effectively integrating for silver nano-grain
The SERS activity of thing is greatly improved.
Second, using obtained purpose product as SERS active-substrate, through respectively to rhodamine and Polychlorinated biphenyls (PCB-2)
The test of multiple many batches under various concentrations is carried out, when the concentration as little as 10 of measured object rhodamine-15Mol/L, Polychlorinated biphenyls
(PCB-2) concentration as little as 10-6During mol/L, remain to effectively detect it, and its detection uniformity and repeatability in
Multiple spot and any point in purpose product is all very good.
Third, preparation method science, efficiently.Not only it has been made rational in infrastructure, the purpose production with higher SERS activity
Thing --- the heterogeneous hierarchy array of silver-Si1-xGe x, also makes obtained purpose product with after laser Raman spectrometer cooperation, possessing
The function of quick trace detection is carried out to environmental toxic pollutant rhodamine and Polychlorinated biphenyls (PCB-2), and then produces purpose
Thing is extremely easy to be widely used for the quick detection in the fields such as environment, chemistry, biology.
Brief description of the drawings
Fig. 1 is respectively to six array of prisms of the silicon of Hexagonal array micron, the silicon for the Hexagonal array for being equipped with germanium nanocone thereon
One of result that six array of prisms of micron are characterized using ESEM (SEM).Wherein, Fig. 1 a are the silicon micron of Hexagonal array
The SEM image of six array of prisms, the illustration in the upper right corner is its partial enlarged drawing；Fig. 1 b scheme for the side view SEM of array shown in Fig. 1 a
Picture；Fig. 1 c are the SEM image of silicon six array of prisms of micron for the Hexagonal array for being equipped with germanium nanocone thereon；Fig. 1 d are side in Fig. 1 c
The amplification SEM image of frame portion position；Fig. 1 e are the side view SEM image of array shown in Fig. 1 c；Fig. 1 f are that square frame position is put in Fig. 1 d
Big SEM image.
Fig. 2 is respectively using the subsidiary energy of ESEM, transmission electron microscope (TEM), transmission electron microscope to obtained purpose product
One of result that spectrum (EDS) tester and laser Raman spectrometer are characterized.Wherein, Fig. 2 a are the SEM image of purpose product,
Fig. 2 b are the TEM image of purpose product, and Fig. 2 c are the EDS spectrograms of purpose product, and Fig. 2 d are to soak different in silver nitrate solution
Purpose product made from time is 10 in adsorption concentration-6Raman spectrogram after mol/L rhodamine.
Fig. 3 is to use LR laser raman to the purpose product containing various concentrations rhodamine and Polychlorinated biphenyls (PCB-2) respectively
One of result that spectrometer is characterized.Which confirms as SERS active-substrate, to can detect that purpose product thereon adhere to
Trace rhodamine or Polychlorinated biphenyls (PCB-2).
Embodiment
The preferred embodiment of the present invention is described in further detail below in conjunction with the accompanying drawings.
Buy or be voluntarily made from market first：
Nickel nitrate solution；Graphene oxide solution；Germane；Hydrogen；Argon gas；Silver nitrate solution.
Then,
Embodiment 1
What is prepared concretely comprises the following steps：
Step 1, first by 81g/L nickel nitrate solution and 2.2g/L graphene oxide solution according to volume ratio be 1：1
Ratio is mixed, and obtains mixed liquor.Again by the silicon micron six prisms battle array of the Hexagonal array obtained using photoetching and deep silicon etching technology
Row, which are placed in mixed liquor, soaks 25min, and obtaining its surface modification has silicon six array of prisms of micron of Hexagonal array of nickel nitrate.
Step 2, silicon six array of prisms of micron that its surface modification is had to the Hexagonal array of nickel nitrate are placed in chemical vapor deposition
After in long-pending furnace chamber, argon purge is vacuumized and is used successively to the furnace chamber and gas circuit of chemical vapor deposition.Then, first make
Furnace chamber is under argon atmospher, and rises to 290 DEG C by room temperature with 10 DEG C/min heating rate.Make again furnace chamber keep flow be
85mL/min deposition atmosphere, in chemical vapor deposition 35min at 280 DEG C；Wherein, deposition atmosphere is by germane, hydrogen and argon gas
It is 0.9 according to volume ratio:21:40 ratio is mixed, and obtains being similar to being equipped with germanium nanocone thereon shown in Fig. 1 c~f
Silicon six array of prisms of micron of Hexagonal array.Then, the silicon micron six prisms battle array of the Hexagonal array of germanium nanocone will be equipped with thereon
Row are placed in 10-212min is soaked in mol/L silver nitrate solution, is made and is similar to shown in Fig. 2, and as shown in the curve in Fig. 3
The heterogeneous hierarchy array of silver-Si1-xGe x.
Embodiment 2
What is prepared concretely comprises the following steps：
Step 1, first by 86g/L nickel nitrate solution and 2.1g/L graphene oxide solution according to volume ratio be 1：1
Ratio is mixed, and obtains mixed liquor.Again by the silicon micron six prisms battle array of the Hexagonal array obtained using photoetching and deep silicon etching technology
Row, which are placed in mixed liquor, soaks 26min, and obtaining its surface modification has silicon six array of prisms of micron of Hexagonal array of nickel nitrate.
Step 2, silicon six array of prisms of micron that its surface modification is had to the Hexagonal array of nickel nitrate are placed in chemical vapor deposition
After in long-pending furnace chamber, argon purge is vacuumized and is used successively to the furnace chamber and gas circuit of chemical vapor deposition.Then, first make
Furnace chamber is under argon atmospher, and rises to 300 DEG C by room temperature with 10 DEG C/min heating rate.Make again furnace chamber keep flow be
88mL/min deposition atmosphere, in chemical vapor deposition 33min at 290 DEG C；Wherein, deposition atmosphere is by germane, hydrogen and argon gas
It is 0.95 according to volume ratio:20:40 ratio is mixed, and obtains being similar to being equipped with germanium nanocone thereon shown in Fig. 1 c~f
Hexagonal array silicon micron six array of prisms.Then, silicon six prisms of micron of the Hexagonal array of germanium nanocone will be equipped with thereon
Array is placed in 5 × 10-210.5min is soaked in mol/L silver nitrate solution, is made and is similar to shown in Fig. 2, and as in Fig. 3
The heterogeneous hierarchy array of silver-Si1-xGe x shown in curve.
Embodiment 3
What is prepared concretely comprises the following steps：
Step 1, first by 91g/L nickel nitrate solution and 2g/L graphene oxide solution according to volume ratio be 1：1 ratio
Example mixing, obtains mixed liquor.Again by silicon six array of prisms of micron of the Hexagonal array obtained using photoetching and deep silicon etching technology
It is placed in mixed liquor and soaks 27min, obtaining its surface modification there are silicon six array of prisms of micron of Hexagonal array of nickel nitrate.
Step 2, silicon six array of prisms of micron that its surface modification is had to the Hexagonal array of nickel nitrate are placed in chemical vapor deposition
After in long-pending furnace chamber, argon purge is vacuumized and is used successively to the furnace chamber and gas circuit of chemical vapor deposition.Then, first make
Furnace chamber is under argon atmospher, and rises to 310 DEG C by room temperature with 10 DEG C/min heating rate.Make again furnace chamber keep flow be
90mL/min deposition atmosphere, in chemical vapor deposition 32min at 300 DEG C；Wherein, deposition atmosphere is by germane, hydrogen and argon gas
It is 1 according to volume ratio:19:40 ratio is mixed, and obtains six sides for the being equipped with germanium nanocone thereon row as shown in Fig. 1 c~f
Silicon six array of prisms of micron of row.Then, silicon six array of prisms of micron that the Hexagonal array of germanium nanocone will be equipped with thereon are placed in
10-39min is soaked in mol/L silver nitrate solution, is made as shown in Fig. 2 and silver-Si1-xGe x as shown in the curve in Fig. 3
Heterogeneous hierarchy array.
Embodiment 4
What is prepared concretely comprises the following steps：
Step 1, first by 96g/L nickel nitrate solution and 1.9g/L graphene oxide solution according to volume ratio be 1：1
Ratio is mixed, and obtains mixed liquor.Again by the silicon micron six prisms battle array of the Hexagonal array obtained using photoetching and deep silicon etching technology
Row, which are placed in mixed liquor, soaks 28min, and obtaining its surface modification has silicon six array of prisms of micron of Hexagonal array of nickel nitrate.
Step 2, silicon six array of prisms of micron that its surface modification is had to the Hexagonal array of nickel nitrate are placed in chemical vapor deposition
After in long-pending furnace chamber, argon purge is vacuumized and is used successively to the furnace chamber and gas circuit of chemical vapor deposition.Then, first make
Furnace chamber is under argon atmospher, and rises to 320 DEG C by room temperature with 10 DEG C/min heating rate.Make again furnace chamber keep flow be
93mL/min deposition atmosphere, in chemical vapor deposition 31min at 310 DEG C；Wherein, deposition atmosphere is by germane, hydrogen and argon gas
It is 1.05 according to volume ratio:18:40 ratio is mixed, and obtains being similar to being equipped with germanium nanocone thereon shown in Fig. 1 c~f
Hexagonal array silicon micron six array of prisms.Then, silicon six prisms of micron of the Hexagonal array of germanium nanocone will be equipped with thereon
Array is placed in 5 × 10-37.5min is soaked in mol/L silver nitrate solution, is made and is similar to shown in Fig. 2, and such as the song in Fig. 3
The heterogeneous hierarchy array of silver-Si1-xGe x shown in line.
Embodiment 5
What is prepared concretely comprises the following steps：
Step 1, first by 101g/L nickel nitrate solution and 1.8g/L graphene oxide solution according to volume ratio be 1：1
Ratio is mixed, and obtains mixed liquor.Again by the silicon micron six prisms battle array of the Hexagonal array obtained using photoetching and deep silicon etching technology
Row, which are placed in mixed liquor, soaks 30min, and obtaining its surface modification has silicon six array of prisms of micron of Hexagonal array of nickel nitrate.
Step 2, silicon six array of prisms of micron that its surface modification is had to the Hexagonal array of nickel nitrate are placed in chemical vapor deposition
After in long-pending furnace chamber, argon purge is vacuumized and is used successively to the furnace chamber and gas circuit of chemical vapor deposition.Then, first make
Furnace chamber is under argon atmospher, and rises to 330 DEG C by room temperature with 10 DEG C/min heating rate.Make again furnace chamber keep flow be
95mL/min deposition atmosphere, in chemical vapor deposition 30min at 320 DEG C；Wherein, deposition atmosphere is by germane, hydrogen and argon gas
It is 1.1 according to volume ratio:17:40 ratio is mixed, and obtains being similar to being equipped with germanium nanocone thereon shown in Fig. 1 c~f
Silicon six array of prisms of micron of Hexagonal array.Then, the silicon micron six prisms battle array of the Hexagonal array of germanium nanocone will be equipped with thereon
Row are placed in 10-46min is soaked in mol/L silver nitrate solution, is made and is similar to shown in Fig. 2, and as shown in the curve in Fig. 3
The heterogeneous hierarchy array of silver-Si1-xGe x.
The purposes of the heterogeneous hierarchy array of silver-Si1-xGe x is,
Using the heterogeneous hierarchy array of silver-Si1-xGe x as the active substrate of SERS, LR laser raman is used
Rhodamine or the content of Polychlorinated biphenyls that spectrometer measurement adheres to thereon, obtain as or are similar to the result shown in Fig. 3；Wherein,
The excitation wavelength of laser Raman spectrometer be 532nm, power output be 0.02~0.04mW, the time of integration be 5~25s.
Obviously, those skilled in the art can be to the present invention the heterogeneous hierarchy array of silver-Si1-xGe x and its preparation side
Method and purposes carry out various changes and modification without departing from the spirit and scope of the present invention.So, if to the present invention these
Modification and modification belong within the scope of the claims in the present invention and its equivalent technologies, then the present invention is also intended to comprising these changes
Including modification.
Claims (5)
1. a kind of preparation method of the heterogeneous hierarchy array of silver-Si1-xGe x, including local reduction way, it is characterised in that main step
It is rapid as follows：
Step 1, it is according to volume ratio by 81~101g/L nickel nitrate solution and 1.8~2.2g/L graphene oxide solution first
1：1 ratio mixing, obtains mixed liquor, then will use silicon six ribs of micron of photoetching and the Hexagonal array of deep silicon etching technology acquisition
Post array, which is placed in mixed liquor, soaks at least 25min, and obtaining its surface modification has silicon six ribs of micron of Hexagonal array of nickel nitrate
Post array；
Step 2, first by silicon six array of prisms of micron that its surface modification has the Hexagonal array of nickel nitrate be placed in flow for 85~
In 95mL/min deposition atmosphere, in chemical vapor deposition at least 30min at 280~320 DEG C, wherein, deposition atmosphere by germane,
Hydrogen and argon gas are 0.9~1.1 according to volume ratio:17~21:40 ratio is mixed, and germanium nanocone is equipped with thereon
Hexagonal array silicon micron six array of prisms, then will be equipped with thereon germanium nanocone Hexagonal array silicon micron six array of prisms put
In 10-2~10-46~12min is soaked in mol/L silver nitrate solution, the heterogeneous hierarchy array of silver-Si1-xGe x is made；
The heterogeneous hierarchy array of silver-Si1-xGe x is silicon six array of prisms of micron of Hexagonal array, wherein, composition six sides row
Germanium nanocone is equipped with silicon six prisms of micron of silicon six array of prisms of micron of row, the surface modification of germanium nanocone has silver nanoparticle
Grain, the inscribed circle diameters of silicon therein six prisms of micron is 3~5 μm, pillar height is 11~15 μm, and the mid diameter of germanium nanocone is
A length of 1.8~2.2 μm of 180~220nm, cone, the particle diameter of silver nano-grain is 35~140nm.
2. the preparation method of the heterogeneous hierarchy array of silver-Si1-xGe x according to claim 1, it is characterized in that in chemical gas
Before mutually depositing, first argon purge is vacuumized and used successively to the furnace chamber and gas circuit of chemical vapor deposition.
3. the preparation method of the heterogeneous hierarchy array of silver-Si1-xGe x according to claim 1, it is characterized in that in chemical gas
Before mutually depositing, the furnace chamber of chemical vapor deposition is set to be under argon atmospher, and 290 are risen to by room temperature with 10 DEG C/min heating rate
~330 DEG C.
4. heterogeneous point of silver-Si1-xGe x prepared by a kind of preparation method of the heterogeneous hierarchy array of silver-Si1-xGe x described in claim 1
The purposes of level structure array, it is characterised in that：
Using the heterogeneous hierarchy array of silver-Si1-xGe x as the active substrate of SERS, laser Raman spectroscopy is used
Rhodamine or the content of Polychlorinated biphenyls that instrument measurement is adhered to thereon.
5. silver-Si1-xGe x prepared by the preparation method of the heterogeneous hierarchy array of silver-Si1-xGe x according to claim 4 is heterogeneous
The purposes of hierarchy array, it is characterized in that the excitation wavelength of laser Raman spectrometer is 532nm, power output is 0.02~
0.04mW, the time of integration are 5~25s.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510257621.2A CN104897643B (en) | 2015-05-19 | 2015-05-19 | Germanium and silicon heterogeneous hierarchy array of silver and its production and use |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510257621.2A CN104897643B (en) | 2015-05-19 | 2015-05-19 | Germanium and silicon heterogeneous hierarchy array of silver and its production and use |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104897643A CN104897643A (en) | 2015-09-09 |
| CN104897643B true CN104897643B (en) | 2017-07-11 |
Family
ID=54030445
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510257621.2A Expired - Fee Related CN104897643B (en) | 2015-05-19 | 2015-05-19 | Germanium and silicon heterogeneous hierarchy array of silver and its production and use |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104897643B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110082337A (en) * | 2019-05-10 | 2019-08-02 | 河南理工大学 | With the active Au-Ag composite material and preparation method of SERS |
| TWI707974B (en) * | 2019-10-03 | 2020-10-21 | 國立高雄大學 | Molecular sensing substrate having metal ions bonded-graphene oxide or reduced graphene oxide and manufacturing method thereof |
| CN111441032B (en) * | 2020-05-22 | 2021-11-09 | 珠海海艺新材料科技有限公司 | SERS substrate based on graphene quantum dot array and preparation method thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0984269A1 (en) * | 1998-08-04 | 2000-03-08 | Alusuisse Technology & Management AG (Alusuisse Technology & Management SA) (Alusuisse Technology & Management Ltd.) | Carrying substrate for Raman spectroscopical analysis |
| CN101281133A (en) * | 2008-05-12 | 2008-10-08 | 中国科学院合肥智能机械研究所 | Preparation of surface reinforced Raman active substrate of large area micro-nano dendritical structure array |
| CN101845672A (en) * | 2009-03-28 | 2010-09-29 | 中国科学院合肥物质科学研究院 | Zinc oxide nanocone array with controllable sharpness and preparation method thereof |
| CN102251286A (en) * | 2011-07-08 | 2011-11-23 | 中国科学院理化技术研究所 | Micron/nanocone array of germanium and preparation method thereof |
| CN103056389A (en) * | 2013-01-28 | 2013-04-24 | 中国科学院合肥物质科学研究院 | Method for preparing germanium nanotubes |
| CN103848988A (en) * | 2014-02-27 | 2014-06-11 | 南京理工大学 | Nitrogen-doped graphene/nickel ferrite/polyaniline nanometer composite material and preparation method for same |
-
2015
- 2015-05-19 CN CN201510257621.2A patent/CN104897643B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0984269A1 (en) * | 1998-08-04 | 2000-03-08 | Alusuisse Technology & Management AG (Alusuisse Technology & Management SA) (Alusuisse Technology & Management Ltd.) | Carrying substrate for Raman spectroscopical analysis |
| CN101281133A (en) * | 2008-05-12 | 2008-10-08 | 中国科学院合肥智能机械研究所 | Preparation of surface reinforced Raman active substrate of large area micro-nano dendritical structure array |
| CN101845672A (en) * | 2009-03-28 | 2010-09-29 | 中国科学院合肥物质科学研究院 | Zinc oxide nanocone array with controllable sharpness and preparation method thereof |
| CN102251286A (en) * | 2011-07-08 | 2011-11-23 | 中国科学院理化技术研究所 | Micron/nanocone array of germanium and preparation method thereof |
| CN103056389A (en) * | 2013-01-28 | 2013-04-24 | 中国科学院合肥物质科学研究院 | Method for preparing germanium nanotubes |
| CN103848988A (en) * | 2014-02-27 | 2014-06-11 | 南京理工大学 | Nitrogen-doped graphene/nickel ferrite/polyaniline nanometer composite material and preparation method for same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104897643A (en) | 2015-09-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101448111B1 (en) | A substrate for surface-enhanced Raman scattering spectroscopy and a preparing method thereof | |
| Wang et al. | Flexible, transparent and highly sensitive SERS substrates with cross-nanoporous structures for fast on-site detection | |
| US20150049332A1 (en) | Gold nanoisland arrays | |
| Zhang et al. | Highly active Au NP microarray films for direct SERS detection | |
| CN102169088B (en) | Monomolecular detection method | |
| Joo et al. | Enhanced quantum yield of photoluminescent porous silicon prepared by supercritical drying | |
| CN104949957A (en) | Embedded type nano dot array surface enhanced Raman active substrate and preparation method thereof | |
| D’Andrea et al. | Decoration of silicon nanowires with silver nanoparticles for ultrasensitive surface enhanced Raman scattering | |
| CN104897643B (en) | Germanium and silicon heterogeneous hierarchy array of silver and its production and use | |
| Li et al. | PDMS/TiO2/Ag hybrid substrate with intrinsic signal and clean surface for recyclable and quantitative SERS sensing | |
| CN102590179A (en) | Silver nano lattice surface enhanced raman active substrate and preparation method thereof | |
| CN103938158A (en) | SERS (Surface Enhanced Raman Scattering) substrate with self-assembled spherical array and preparation method thereof | |
| Guo et al. | Nafion stabilized Ag nanopillar arrays as a flexible SERS substrate for trace chemical detection | |
| Bao et al. | Study of silver films over silica beads as a surface‐enhanced Raman scattering (SERS) substrate for detection of benzoic acid | |
| Liu et al. | Ag-NP@ Ge-nanotaper/Si-micropillar ordered arrays as ultrasensitive and uniform surface enhanced Raman scattering substrates | |
| Yin et al. | Plasmonic and sensing properties of vertically oriented hexagonal gold nanoplates | |
| Bechelany et al. | Extended domains of organized nanorings of silver grains as surface-enhanced Raman scattering sensors for molecular detection | |
| CN108611604B (en) | Manufacturing method of economical high-precision surface enhanced Raman active substrate based on high dielectric material | |
| CN109612975A (en) | A kind of surface enhanced Raman substrate and preparation method thereof | |
| CN106350058B (en) | The preparation method of fluorescence enhancement substrate based on nano-porous gold | |
| CN103614701B (en) | Ge nano-tube top bump array of modified by silver nanoparticles and its production and use | |
| CN116577315A (en) | Surface-enhanced Raman detection chip for detecting organic environmental pollutants and preparation method thereof | |
| Chen et al. | Imprintable Au-based thin-film metallic glasses with different crystallinities for surface-enhanced Raman scattering | |
| CN108802007B (en) | Surface enhanced Raman substrate with large-area nano-film structure and preparation method thereof | |
| CN111122543A (en) | Roughened silicon column array structure and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170711 Termination date: 20180519 |