CN107732396A - A kind of power splitter based on substrate integration wave-guide - Google Patents
A kind of power splitter based on substrate integration wave-guide Download PDFInfo
- Publication number
- CN107732396A CN107732396A CN201710908746.6A CN201710908746A CN107732396A CN 107732396 A CN107732396 A CN 107732396A CN 201710908746 A CN201710908746 A CN 201710908746A CN 107732396 A CN107732396 A CN 107732396A
- Authority
- CN
- China
- Prior art keywords
- port
- guide
- substrate integration
- integration wave
- power splitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/12—Coupling devices having more than two ports
- H01P5/16—Conjugate devices, i.e. devices having at least one port decoupled from one other port
Landscapes
- Control Of Motors That Do Not Use Commutators (AREA)
- Waveguides (AREA)
Abstract
The present invention relates to a kind of power splitter based on substrate integration wave-guide, the power splitter includes：The first port, second port, the 3rd port, multiple isolation resistances；First port is public port, and second port and the 3rd port are to divide port；The power splitter uses substrate integrated wave guide structure, including upper strata metal covering, intermediate medium plate and lower metal face, and intermediate medium plate is between upper strata metal covering and lower metal face；One substrate integration wave-guide being made up of multiple metallic vias is set respectively between first port and second port, the 3rd port；The one annular substrate integration wave-guide being made up of multiple metallic vias is set between second port and the 3rd port；Power splitter between second port and the 3rd port is externally connected to multiple isolation resistances.Pass through above-mentioned power splitter so that millimere-wave band power splitter load power improves, and loss diminishes, and greatly reduces cost, while its weight of structure as use.
Description
Technical field
The invention belongs to power splitter field, more particularly to a kind of power splitter based on substrate integration wave-guide.
Background technology
As one of key passive part in microwave and millimeter wave system, power splitter can realize the power distribution of multichannel.
Traditional Wilkinson power splitters are widely used in microwave and millimeter wave system due to the features such as its is simple in construction, design facilitates
In system.But as the continuous improvement of the requirements such as level of integrated system and performance, traditional Wilkinson power splitters have been difficult
Meet increasingly harsh technical requirement.Especially in terms of millimere-wave band, powerful synthesis.Traditional Wilkinson work(
Divide the isolation resistance of device earth-free, radiating turns into one of factor of limitation high-power applications, especially in high-power applications scene
In, it is more prominent the problem of the current carrying capacity of microstrip line and loss.It would therefore be desirable to be lost small, load power is big
Power splitter.
The content of the invention
The technical problems to be solved by the invention are：Its loss of existing waveguide power divider is big, load power is small, cost
It is high.
To solve technical problem above, the invention provides a kind of power splitter based on substrate integration wave-guide, the work(point
Device includes：First port, second port, the 3rd port, multiple isolation resistances；The power splitter is symmetrical on center line；It is described
First port is public port, for inputting microwave signal or output microwave signal；The second port and the 3rd end
Mouth is divides port, for amplitude in phase microwave signals such as amplitude in phase microwave signal or input such as outputs；The work(point
Device uses substrate integrated wave guide structure, including upper strata metal covering, intermediate medium plate and lower metal face, and intermediate medium plate is positioned at upper
Between layer metal covering and lower metal face；Set respectively between the first port and the second port, the 3rd port
One substrate integration wave-guide being made up of multiple metallic vias；One is set between the second port and the 3rd port by more
The annular substrate integration wave-guide of individual metallic vias composition；Outside the power splitter between the second port and the 3rd port
Portion is connected with multiple isolation resistances；Wherein, each metallic vias is in contact with upper strata metal covering and lower metal face.
Beneficial effects of the present invention：Pass through above-mentioned power splitter so that millimere-wave band power splitter load power improves, loss
Diminish, and greatly reduce cost, while its weight of structure as use.
Further, the second port and the 3rd port are symmetrical on the center line of the power splitter and at one article
On straight line, the first port is on the center line of the power splitter.
Further, the first matching micro-strip and first are connected with turn between the first port and the second port
Substrate integration wave-guide；The second matching micro-strip and the second substrate are connected with turn between the first port and the 3rd port
Integrated waveguide.
Above-mentioned further beneficial effect：Loss is greatly reduced using substrate integration wave-guide, and improves transmission line
Insertion Loss.
Further, the isolation resistance includes：First isolation resistance, the second isolation resistance, the 3rd isolation resistance, the 4th
Isolation resistance；First isolation resistance and second isolation resistance are in parallel；3rd isolation resistance and the 4th isolation electricity
Resistance is in parallel, and first isolation resistance and second isolation resistance isolate electricity with the 3rd isolation resistance and the described 4th
Hinder symmetrical on the center line of the power splitter.
Above-mentioned further beneficial effect：Using this isolation resistance in parallel, the tolerance work(of whole power splitter is improved
Rate ability, and the mode that two isolation resistances are in parallel so that it is closer to the distance between isolation resistance, form certain capacitive and offset this
Perception, so as to improve the isolation of power splitter.
Further, the second port passes through the 4th substrate integration wave-guide and first isolation resistance and described second
Isolation resistance is attached；3rd port passes through the 3rd substrate integration wave-guide and the 3rd isolation resistance and the described 4th
Isolation resistance is attached；Wherein, the 4th substrate integration wave-guide and the 3rd substrate integration wave-guide are on the work(point
The center line of device is symmetrical, and the 4th substrate integration wave-guide (10) and the 3rd substrate integration wave-guide (9) are arc knot
Structure.
Further, first isolation resistance and second isolation resistance and the 3rd isolation resistance and described the
Connected between four isolation resistances by the 5th substrate integration wave-guide, wherein the 5th substrate integration wave-guide is arcuate structure.
Further, the length of the 4th substrate integration wave-guide and the 3rd substrate integration wave-guide is medium wavelength
A quarter, and characteristic impedance is 70 ohm.
Further, the length of the 5th substrate integration wave-guide is the half of EWL, and characteristic impedance is 70 Europe
Nurse.
Further, be smaller than operation wavelength 1st/25th of the metallic vias, and bore dia is less than
0.5mm。
Further, first substrate integration wave-guide, second substrate integration wave-guide, the 3rd substrate integrate ripple
Lead, the width of the 4th substrate integration wave-guide and the 5th substrate integration wave-guide passes through following formula and calculated and obtains：
Wherein Z is characteristic impedance, and w is the width of substrate integration wave-guide, and η is free space wave impedance, and h is substrate media thickness
Degree, ε is the dielectric constant of intermediate medium, and f is working frequency, and c is the free space light velocity.
Brief description of the drawings
Fig. 1 is a kind of structure top view of power splitter based on substrate integration wave-guide of the present invention；
Fig. 2 is a kind of main diagram of structure of power splitter based on substrate integration wave-guide of the present invention；
Accompanying drawing：
1st, first port, 2, second port, the 3, the 3rd port, the 4, first substrate integration wave-guide, the 5, first matching micro-strip, 6,
Second matching micro-strip, the 7, second substrate integration wave-guide, 8, annular substrate integration wave-guide, the 9, the 3rd substrate integration wave-guide, the 10, the 4th
Substrate integration wave-guide, the 11, the 5th substrate integration wave-guide, the 12, first isolation resistance, the 13, second isolation resistance, the 14, the 3rd isolation
Resistance, the 15, the 4th isolation resistance, 16, upper strata metal covering, 17, lower metal face, 18, metallic vias, 19, intermediate medium plate.
Embodiment
The principle and feature of the present invention are described below in conjunction with accompanying drawing, the given examples are served only to explain the present invention, and
It is non-to be used to limit the scope of the present invention.
As shown in figure 1, the embodiment of the present invention 1 provides a kind of power splitter based on substrate integration wave-guide, the power splitter
Including：First port 1, second port 2, the 3rd port 3, multiple isolation resistances；The power splitter is symmetrical on center line；It is described
First port 1 is public port, for inputting microwave signal or output microwave signal；The second port 2 and the described 3rd
Port is is divided in port 3, for amplitude in phase microwave signals such as amplitude in phase microwave signal or input such as outputs；The work(
Device is divided to use substrate integrated wave guide structure, including upper strata metal covering 16, intermediate medium plate 19 and lower metal face 17, intermediate medium
Plate 19 is between upper strata metal covering 16 and lower metal face 17；The first port 1 and the second port 2, the described 3rd
One substrate integration wave-guide being made up of multiple metallic vias 18 is set respectively between port 3；In the second port 2 and described
The one annular substrate integration wave-guide 8 being made up of multiple metallic vias 18 is set between three ports 3；The second port 2 and described
The power splitter between 3rd port 3 is externally connected to multiple isolation resistances；Wherein, each metallic vias 18 with it is upper
Layer metal covering 16 and lower metal face 17 are in contact.
It should be noted that it is that microwave signal enters from first port 1 in the present embodiment 1, from second port 2 and the 3rd
Port 3 output etc. amplitude in phase microwave signal, or from the port 3 of second port 2 and the 3rd input etc. amplitude in phase microwave
Signal, exported from first port 1.1GHz bandwidth centered on typical Ka wave bands 35GHz, the port 3 of second port 2 and the 3rd
Signal amplitude be less than -15dB than 1 small 4dB of first port, first port 1, second port 2, the S11 parameters of the 3rd port 3,
The interport isolation of the port 3 of Two-port netwerk 2 and the 3rd is less than or equal to -20dB.
In addition, as shown in Fig. 2 the power splitter is to use substrate integrated wave guide structure, including upper strata metal covering 16, centre are situated between
Scutum 19 and lower metal face 17, intermediate medium plate 19 is between upper strata metal covering 16 and lower metal face 17；In first end
The substrate integration wave-guide being made up of multiple metallic vias 18 is provided with upper and lower layer metal covering between mouth 1 and second port 2,
And the base being made up of multiple metallic vias 18 is provided with the upper and lower layer metal covering between first port 1 and second port 3
Piece integrated waveguide；It is provided with addition in the upper and lower layer metal covering between first port 2 and second port 3 by multiple metal mistakes
The annular substrate integration wave-guide that hole 18 forms, and the power splitter between first port 2 and second port 3 is arcuate structure,
The arcuate structure power splitter between the port 3 of second port 2 and the 3rd is externally connected to multiple isolation resistances.In first port
It is the transition of microstrip line and substrate integration wave-guide between 1 and second port 2, both structures have different microwave modes, he
Between need transition to prevent from forming big signal reflex between two kinds of different modes.
Alternatively, the center of the second port 2 and the 3rd port 3 on the power splitter in another embodiment
Symmetrically and point-blank, the first port 1 is on the center line of the power splitter for line.
Alternatively, it is connected with the first matching between the first port 1 and the second port 2 in another embodiment
The substrate integration wave-guide 4 of micro-strip 5 and first；The second matching micro-strip is connected between the first port 1 and the 3rd port 3
6 and second substrate integration wave-guide 7.
It should be noted that it is connected with the first matching micro-strip 5 and in turn between the first port 1 and second port 2
One substrate integration wave-guide 4, the transition of the microstrip line of the first 5 and first substrate integration wave-guide of matching micro-strip 4 and substrate integration wave-guide, this
Two kinds of structures have different microwave modes, needed between them transition prevent from forming big signal between two kinds of different modes it is anti-
Penetrate.
Alternatively, the isolation resistance includes in another embodiment：First isolation resistance 12, the second isolation resistance 13,
3rd isolation resistance 14, the 4th isolation resistance 15；First isolation resistance 12 and second isolation resistance 13 are in parallel；3rd
Isolation resistance 14 and the 4th isolation resistance 15 are in parallel, and first isolation resistance 12 and second isolation resistance 13 with
3rd isolation resistance 14 and the 4th isolation resistance 15 are symmetrical on the center line of the power splitter.
It should be noted that isolation resistance is used as the matching of second port and the 3rd port in the present embodiment, in reality
During border uses, second port can not possibly be identical with the power of the 3rd port, at this moment can influence to match, in the feelings of this mismatch
Under condition, the first isolation resistance 12, the second isolation resistance 13, the 3rd isolation resistance 14, the 4th isolation resistance 15 will be born necessarily
Power realize isolating for second port and the 3rd port.The first isolation resistance 12 and the second isolation resistance are used in this design alternative
13 two 100 ohm of resistor coupled in parallel forms 50 Ohmic resistances (14,15 is same), can cause resistance bear power it is double (because
When identical pressure drop V is applied to isolation resistance, V2/50 is the power that resistance is born, and now two resistance have divided the power equally,
Respectively bear V2/100).Power splitter for covering gloomy form, the maximum key of power tolerance are exactly the tolerance power energy of isolation resistance
Power, millimere-wave band can not use the resistance encapsulated greatly, and usual resistance encapsulation is bigger, and resistance to power capability is stronger, and we can only be similar
Using 0603 or 0402 small package resistance, and their rated power only has 0.07W and 0.05W.Simultaneously because frequency range is high, every
Very notable from the access point distributed constant effect of resistance, the electrical length of resistance is big, brings the perception that can not ignore, and can influence
Match somebody with somebody, and then influence isolation, therefore by way of the first isolation resistance 12 and the second isolation resistance 13 are in parallel, their spacing
This perception is offset from certain capacitive relatively closely, is formed so that the isolation of power splitter is improved.Using this isolation in parallel
Resistance, improve the tolerance power ability of whole power splitter, and the mode that two isolation resistances are in parallel so that between isolation resistance
It is closer to the distance, form certain capacitive and offset this perception, so as to improve the isolation of power splitter.
Alternatively, in another embodiment the second port 2 by the 4th substrate integration wave-guide 10 with described first every
It is attached from resistance 12 and second isolation resistance 13；3rd port 3 by the 3rd substrate integration wave-guide 9 with it is described
3rd isolation resistance 14 and the 4th isolation resistance 15 are attached；Wherein, the 4th substrate integration wave-guide 10 and described
3rd substrate integration wave-guide 9 is symmetrical on the center line of the power splitter, and the 4th substrate integration wave-guide 10 and described
Three substrate integration wave-guides 9 are arcuate structure.
It should be noted that the 3rd substrate integration wave-guide 9 and the 4th substrate integration wave-guide 10 are used in the present embodiment, this
Sample make it that the coupling of the power splitter is almost 0, so the power splitter is in 35Ghz, than tradition cover gloomy power splitter isolation improve to
Few 5dB.
Alternatively, first isolation resistance 12 and second isolation resistance 13 and the described 3rd in another embodiment
Connected between isolation resistance 14 and the 4th isolation resistance 15 by the 5th substrate integration wave-guide 11, wherein the 5th substrate
Integrated waveguide 11 is arcuate structure.
Alternatively, the 4th substrate integration wave-guide 10 and the 3rd substrate integration wave-guide 9 in another embodiment
Length is a quarter of medium wavelength, and characteristic impedance is 70 ohm.
It should be noted that the reflected signal of second port entered the first substrate integration wave-guide 4, second in the present embodiment
The half wavelength path of substrate integration wave-guide 7, at the same by the 3rd substrate integration wave-guide 9, the 4th substrate integration wave-guide 10,
The path of one wavelength of the 5th substrate integration wave-guide 11, the two microwave signals reach the 3rd port phase difference 180 degree, shape
Into counteracting.
Alternatively, the length of the 5th substrate integration wave-guide 11 is the half of EWL in another embodiment, and
Characteristic impedance is 70 ohm.
Alternatively, in another embodiment the metallic vias (18) be smaller than operation wavelength 25/
One, and bore dia is less than 0.5mm.
Alternatively, first substrate integration wave-guide 4, second substrate integration wave-guide 7, described in another embodiment
The width of 3rd substrate integration wave-guide 9, the 4th substrate integration wave-guide 10 and the 5th substrate integration wave-guide 11 is under
State formula and calculate acquisition：
Wherein Z is characteristic impedance, and w is the width of substrate integration wave-guide, and η is free space wave impedance, and h is substrate media thickness
Degree, ε is the dielectric constant of intermediate medium, and f is working frequency, and c is the free space light velocity.
In this manual, identical embodiment or example are necessarily directed to the schematic representation of above-mentioned term.
Moreover, specific features, structure, material or the feature of description can be in any one or more embodiments or example with suitable
Mode combines.In addition, in the case of not conflicting, those skilled in the art can be by the difference described in this specification
Embodiment or example and the feature of different embodiments or example are combined and combined.
The foregoing is only presently preferred embodiments of the present invention, be not intended to limit the invention, it is all the present invention spirit and
Within principle, any modification, equivalent substitution and improvements made etc., it should be included in the scope of the protection.
Claims (10)
1. a kind of power splitter based on substrate integration wave-guide, it is characterised in that the power splitter includes：First port (1), the second end
Mouth (2), the 3rd port (3), multiple isolation resistances；The power splitter is symmetrical on center line；The first port (1) is public
Port, for inputting microwave signal or output microwave signal；The second port (2) and the 3rd port (3) are a point end
Mouthful, for amplitude in phase microwave signals such as amplitude in phase microwave signal or input such as outputs；The power splitter uses base
Piece integrated wave guide structure, including upper strata metal covering (16), intermediate medium plate (19) and lower metal face (17), intermediate medium plate
(19) between upper strata metal covering (16) and lower metal face (17)；The first port (1) and the second port (2),
One substrate integration wave-guide being made up of multiple metallic vias (18) is set respectively between the 3rd port (3)；Described second
The one annular substrate integration wave-guide being made up of multiple metallic vias (18) is set between port (2) and the 3rd port (3)
(8)；The power splitter between the second port (2) and the 3rd port (3) is externally connected to multiple isolation resistances；Its
In, each metallic vias (18) is in contact with upper strata metal covering (16) and lower metal face (17).
2. power splitter according to claim 1, it is characterised in that the second port (2) and the 3rd port (3) are closed
In the power splitter center line symmetrically and point-blank, the first port (1) is on the center line of the power splitter.
3. power splitter according to claim 1 or 2, it is characterised in that in the first port (1) and the second port
(2) the first matching micro-strip (5) and the first substrate integration wave-guide (4) are connected between in turn；The first port (1) with it is described
It is connected with the second matching micro-strip (6) and the second substrate integration wave-guide (7) between 3rd port (3) in turn.
4. power splitter according to claim 3, it is characterised in that the isolation resistance includes：First isolation resistance (12),
Second isolation resistance (13), the 3rd isolation resistance (14), the 4th isolation resistance (15)；First isolation resistance (12) and described
Second isolation resistance (13) is in parallel；3rd isolation resistance (14) and the 4th isolation resistance (15) are in parallel, and described first every
From resistance (12) and second isolation resistance (13) and the 3rd isolation resistance (14) and the 4th isolation resistance (15)
Center line on the power splitter is symmetrical.
5. power splitter according to claim 4, it is characterised in that the second port (2) integrates ripple by the 4th substrate
(10) are led to be attached with first isolation resistance (12) and second isolation resistance (13)；3rd port (3) is logical
The 3rd substrate integration wave-guide (9) is crossed to be attached with the 3rd isolation resistance (14) and the 4th isolation resistance (15)；Its
In, the center line pair of the 4th substrate integration wave-guide (10) and the 3rd substrate integration wave-guide (9) on the power splitter
Claim, and the 4th substrate integration wave-guide (10) and the 3rd substrate integration wave-guide (9) are arcuate structure.
6. power splitter according to claim 4, it is characterised in that first isolation resistance (12) and second isolation
Pass through the 5th substrate integration wave-guide between resistance (13) and the 3rd isolation resistance (14) and the 4th isolation resistance (15)
(11) connect, wherein the 5th substrate integration wave-guide (11) is arcuate structure.
7. power splitter according to claim 5, it is characterised in that the 4th substrate integration wave-guide (10) and the described 3rd
The length of substrate integration wave-guide (9) is a quarter of medium wavelength, and characteristic impedance is 70 ohm.
8. power splitter according to claim 6, it is characterised in that the length of the 5th substrate integration wave-guide (11) is that have
The half of length, and characteristic impedance is 70 ohm.
9. power splitter according to claim 1 or 2, it is characterised in that the metallic vias (18) is smaller than work
/ 25th of wavelength, and bore dia is less than 0.5mm.
10. power splitter according to claim 1 or 2, it is characterised in that first substrate integration wave-guide (4), described
Two substrate integration wave-guides (7), the 3rd substrate integration wave-guide (9), the 4th substrate integration wave-guide (10) and the described 5th
The width of substrate integration wave-guide (11) is calculated by following formula and obtained：
<mrow>
<mi>z</mi>
<mo>=</mo>
<mfrac>
<mrow>
<mi>&eta;</mi>
<mi>h</mi>
<mi>&pi;</mi>
</mrow>
<msqrt>
<mrow>
<mn>4</mn>
<msup>
<mi>&epsiv;w</mi>
<mn>2</mn>
</msup>
<mo>-</mo>
<mrow>
<mo>(</mo>
<mn>3</mn>
<mi>c</mi>
<mo>/</mo>
<mn>10</mn>
<msup>
<mi>f</mi>
<mn>2</mn>
</msup>
<mo>)</mo>
</mrow>
</mrow>
</msqrt>
</mfrac>
</mrow>
Wherein Z is characteristic impedance, and w is the width of substrate integration wave-guide, and η is free space wave impedance, and h is substrate media thickness, ε
It is the dielectric constant of intermediate medium, f is working frequency, and c is the free space light velocity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710908746.6A CN107732396B (en) | 2017-09-29 | 2017-09-29 | Power divider based on substrate integrated waveguide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710908746.6A CN107732396B (en) | 2017-09-29 | 2017-09-29 | Power divider based on substrate integrated waveguide |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107732396A true CN107732396A (en) | 2018-02-23 |
| CN107732396B CN107732396B (en) | 2021-04-16 |
Family
ID=61209099
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710908746.6A Active CN107732396B (en) | 2017-09-29 | 2017-09-29 | Power divider based on substrate integrated waveguide |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107732396B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110416682A (en) * | 2019-07-11 | 2019-11-05 | 东南大学 | A kind of mixing ring based on half-module chip integrated ridge waveguide |
| CN115378379A (en) * | 2022-10-20 | 2022-11-22 | 南京正銮电子科技有限公司 | Power amplifier based on SIW |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102324615A (en) * | 2011-07-14 | 2012-01-18 | 韩煦 | Microwave millimeter wave planar broadband high-power micro-strip power synthesizer |
| CN202917275U (en) * | 2012-12-03 | 2013-05-01 | 中国工程物理研究院核物理与化学研究所 | Assembled high voltage resistor loading device |
| CN103534869A (en) * | 2013-04-15 | 2014-01-22 | 华为技术有限公司 | Waveguide filter |
-
2017
- 2017-09-29 CN CN201710908746.6A patent/CN107732396B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102324615A (en) * | 2011-07-14 | 2012-01-18 | 韩煦 | Microwave millimeter wave planar broadband high-power micro-strip power synthesizer |
| CN202917275U (en) * | 2012-12-03 | 2013-05-01 | 中国工程物理研究院核物理与化学研究所 | Assembled high voltage resistor loading device |
| CN103534869A (en) * | 2013-04-15 | 2014-01-22 | 华为技术有限公司 | Waveguide filter |
Non-Patent Citations (1)
| Title |
|---|
| HAIDONG CHEN等: "Function-Reconfigurable Between SPDT Switch and Power Divider Based on Switchable HMSIW Unit", 《IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110416682A (en) * | 2019-07-11 | 2019-11-05 | 东南大学 | A kind of mixing ring based on half-module chip integrated ridge waveguide |
| CN110416682B (en) * | 2019-07-11 | 2021-04-06 | 东南大学 | Hybrid ring based on half-mode substrate integrated ridge waveguide |
| CN115378379A (en) * | 2022-10-20 | 2022-11-22 | 南京正銮电子科技有限公司 | Power amplifier based on SIW |
| CN115378379B (en) * | 2022-10-20 | 2023-03-28 | 南京正銮电子科技有限公司 | Power amplifier based on SIW |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107732396B (en) | 2021-04-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105489987B (en) | A kind of substrate integration wave-guide microwave tunable filter based on liquid crystal material | |
| US20100026416A1 (en) | Power divider and power combiner using dual band-composite right/left handed transmission line | |
| EP2899803B1 (en) | Circuit comprising balun and impedance transforming elements | |
| CN105576332B (en) | Waveguide with filtering characteristic is to microstrip transition structure | |
| CN106654497B (en) | Minimized wide-band slow wave half module substrate integrated wave guide coupler and its design method | |
| CN103825076B (en) | Sheet type LTCC miniaturized 3dB directional coupler | |
| CN110061357A (en) | A kind of ipsilateral differential feed formula chip integrated waveguide slot antenna | |
| CN101436702A (en) | Waveguide-microstrip line transformation and power divider | |
| CN107565195A (en) | Microwave filter | |
| CN206225518U (en) | Ka full frequency bands minimize high isolation waveguide power divider | |
| CN110492214A (en) | The power splitters such as square coaxial transmission line Terahertz | |
| CN106532212A (en) | Radio-frequency vertical transition structure based on ceramic microstrip line | |
| CN107732396A (en) | A kind of power splitter based on substrate integration wave-guide | |
| CN108808195A (en) | Waveguide more than one point turns micro-strip millimeter wave power splitter | |
| CN110350282A (en) | Directional coupler based on double ridge integral substrate gap waveguides | |
| CN114256585B (en) | Millimeter wave broadband waveguide magic T | |
| CN205355223U (en) | Piece formula stromatolite directional coupler | |
| CN110311201A (en) | A kind of reversed-phase power combiner | |
| CN100495814C (en) | Any dual-frequency band 3dB branch directional coupler | |
| CN206412449U (en) | A kind of ultra wide band Wilkinson power splitters loaded based on parasitic element | |
| CN103956552A (en) | Microwave power divider | |
| CN104319450A (en) | Ultra wide band bridge based on thick film manufacturing technology | |
| CN205609721U (en) | Ware is divided to low -loss " n " shape cavity merit | |
| CN207098024U (en) | Microwave filter | |
| CN206461078U (en) | 2 6GHz, ceramic base high-power lange coupler |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |