CN107731758A - The die-bonding method and semiconductor element of a kind of semiconductor element - Google Patents
The die-bonding method and semiconductor element of a kind of semiconductor element Download PDFInfo
- Publication number
- CN107731758A CN107731758A CN201710823265.5A CN201710823265A CN107731758A CN 107731758 A CN107731758 A CN 107731758A CN 201710823265 A CN201710823265 A CN 201710823265A CN 107731758 A CN107731758 A CN 107731758A
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- semiconductor element
- die
- bonding method
- protection component
- element according
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 68
- 238000000034 method Methods 0.000 title claims abstract description 26
- 239000000356 contaminant Substances 0.000 claims abstract description 16
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000000919 ceramic Substances 0.000 claims abstract description 9
- 125000000962 organic group Chemical group 0.000 claims abstract description 7
- 239000007772 electrode material Substances 0.000 claims abstract description 6
- 239000000853 adhesive Substances 0.000 claims description 24
- 230000001070 adhesive effect Effects 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 17
- 239000003292 glue Substances 0.000 claims description 10
- 238000001179 sorption measurement Methods 0.000 claims description 10
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims 1
- 238000010521 absorption reaction Methods 0.000 abstract description 3
- 239000000470 constituent Substances 0.000 abstract 1
- 239000010931 gold Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000443 aerosol Substances 0.000 description 3
- 239000003344 environmental pollutant Substances 0.000 description 3
- 231100000719 pollutant Toxicity 0.000 description 3
- 230000002633 protecting effect Effects 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 238000009412 basement excavation Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000007771 core particle Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000002657 fibrous material Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 238000006068 polycondensation reaction Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83007—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a permanent auxiliary member being left in the finished device, e.g. aids for holding or protecting the layer connector during or after the bonding process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83009—Pre-treatment of the layer connector or the bonding area
- H01L2224/83022—Cleaning the bonding area, e.g. oxide removal step, desmearing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83009—Pre-treatment of the layer connector or the bonding area
- H01L2224/83051—Forming additional members, e.g. dam structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/832—Applying energy for connecting
- H01L2224/83201—Compression bonding
- H01L2224/83203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
Abstract
The present invention discloses the die-bonding method and semiconductor element of a kind of semiconductor element; the die-bonding method of semiconductor element, which provides to have, is better than semiconductor element electrode material to gaseous contaminant or the protection component of particulate contaminants absorption affinity; component constituent includes activated carbon, porous ceramics or organic group; prevent that electrode is contaminated during die bond, so as to lift die bond yield.
Description
Technical field
The present invention relates to the structure of a kind of die-bonding method of semiconductor element and semiconductor element, belongs to semiconductor element and consolidates
Brilliant field.
Background technology
With the continuous excavation of semiconductor element performance, the making of semiconductor element turns into most valued neck in recent years
One of domain.In the processing procedure of semiconductor element, Au gold material turns into because its quality is soft, property is stable, current expansion effect is good
The first choice of last layer, always is the more common electrode structure of industry in semiconductor chip electrode structure.But due to Au-
Weak interaction guiding surface adsorbs one layer of ring-type Gao He clusters race compound between Au keys, causes core particles in environment existing for organic matter
In, Au will provide a medium, allow epoxy silane type organic in the polycondensation of Au surfaces and solidification, PAD (electrode) table when making die bond
Face is contaminated, and so as to cause chip in die bond link, bonding wire easily occurs, gold etc. is abnormal altogether, influences product quality.
The content of the invention
The present invention is based on above phenomenon, proposes to include aerosol state when a kind of solution die bond using strong adsorptivity component
Suspended contaminant including pollutant or dust pollution thing is attached to the scheme on electrode.
The technical scheme is that：A kind of die-bonding method of semiconductor element is provided, semiconductor element has electrode knot
Structure, suspended contaminant be present in die bond region, in die bond technique, offer, which has, in die bond region is better than electrode material to suspending
The protection component of the adsorption capacity of pollutant.
Preferably, during the die bond technique, semiconductor element is fixed using crystal-bonding adhesive, crystal-bonding adhesive is added
Heat.
Preferably, the temperature of the heating is 100-200 DEG C, and crystal-bonding adhesive can produce aerosol state dirt at this temperature
Contaminate thing.
Preferably, the composition of the suspended contaminant includes the crystal-bonding adhesive used to semiconductor element die bond or other suspensions
Pollute particle.
Preferably, the protection component is arranged on substrate.
Preferably, the semiconductor element has side wall, and the protection component is arranged in the side wall of semiconductor element.
Preferably, the protection component is from being less than 300mm with a distance from electrode.
Preferably, the electrode material includes Au, Al, Ag or Ti.
Preferably, the protection component includes activated carbon, porous ceramics and organic group.
Preferably, the cut surface of the semiconductor element has a protection materials, protection materials to crystal-bonding adhesive glue gas or other
The adsorption capacity of suspended pollution particle is better than the adsorption capacity of electrode pair crystal-bonding adhesive glue gas.
Present invention simultaneously provides a kind of semiconductor element, the cut surface of the semiconductor element has protection materials, protection
Material is better than the adsorption capacity of electrode pair crystal-bonding adhesive glue gas to the adsorption capacity of crystal-bonding adhesive glue gas or other suspended pollution particles.
Preferably, the protection materials include the sorptive materials such as activated carbon, porous ceramics and organic group.
Preferably, the semiconductor element includes light emitting diode, solar cell or IC-components.
Preferably, when the semiconductor element is light emitting diode, protect component not on light emitting surface of light emitting diode.
Other features and advantages of the present invention will be illustrated in the following description, also, partly becomes from specification
Obtain it is clear that or being understood by implementing the present invention.The purpose of the present invention and other advantages can be by specification, rights
Specifically noted structure is realized and obtained in claim and accompanying drawing.
Brief description of the drawings
Accompanying drawing is used for providing a further understanding of the present invention, and a part for constitution instruction, the reality with the present invention
Apply example to be used to explain the present invention together, be not construed as limiting the invention.In addition, accompanying drawing data be description summary, be not by
Ratio is drawn.
Fig. 1 is a kind of semiconductor component structure schematic diagram that first embodiment of the invention is related to..
Fig. 2 is a kind of semiconductor component structure schematic diagram that second embodiment of the invention is related to.
Fig. 3 is a kind of semiconductor component structure schematic diagram that third embodiment of the invention is related to.
Fig. 4 is a kind of semiconductor component structure schematic diagram that four embodiment of the invention is related to.
In figure：100th, semiconductor element；111/112nd, electrode；120th, substrate；130th, p-type epitaxial layer；140th, luminescent layer；
150th, N-type epitaxy layer；200th, component is protected；300th, crystal-bonding adhesive；400th, package substrate.
Embodiment
Embodiments of the present invention are described in detail below with reference to drawings and Examples, and how the present invention is applied whereby
Technological means solves technical problem, and the implementation process for reaching technique effect can fully understand and implement according to this.Need to illustrate
As long as not forming conflict, each embodiment in the present invention and each feature in each embodiment can be combined with each other,
The technical scheme formed is within protection scope of the present invention.
Embodiment 1
It refer to Fig. 1, there is provided a kind of die-bonding method of semiconductor element, semiconductor element 100 include light emitting diode, solar energy
Battery or IC-components, semiconductor element 100 have electrode 111/112, and the material of electrode 111/112 can select bag
Include the materials such as Au, Al, Ag, Ti, electrode 111 is first electrode, and first electrode is and electric on the groundwork face of semiconductor element
Pole 112 is second electrode, and second electrode is arranged on step surface, suspended contaminant easily be present in the atmosphere in die bond region,
In die bond technique, in die bond region, offer, which has, is better than guarantor of the electrode material 111/112 to the adsorption capacity of suspended contaminant
Protecting assembly 200, protection component 200 are made up of sorptive material, using the good adsorptivity of component 200 is protected, adsorb crystal bonding area
The suspended contaminant in domain, reduce influence of the suspended contaminant to electrode 111/112.
Because die bond technique using crystal-bonding adhesive 300 semiconductor element 100 is fixed, crystal-bonding adhesive 300 is heated,
The solvent in crystal-bonding adhesive 300 is removed, leaves solid-state solute, so as to which semiconductor element 100 is fixed solid-state solute, heating
Temperature is 100-200 DEG C, and crystal-bonding adhesive 300 easily produces the aerosol state pollutant of the glue gas of crystal-bonding adhesive 300 at this temperature,
Therefore the protection component 200 of the present embodiment can be very good to get rid of the glue gas of crystal-bonding adhesive 300 or other suspended pollutions in air
The suspended contaminants such as grain.In order to realize that protection component 200 removes the purification function of suspended contaminant, the absorption of component 200 is protected
Property material can select include the materials such as activated carbon, porous ceramics and organic group.
Protection component 200, which can be arranged on the package substrate 400 of fixed semiconductor element 100 or be set directly at, partly leads
On volume elements part 100, or protection component 200 can also be arranged on from the region for being less than 300mm with a distance from electrode 111/112, because
For if greater than this distance, then protecting effect declines, and the function of protection component 200 is significantly attenuated.
Embodiment 2
Fig. 2 is refer to, present embodiment discloses a kind of semiconductor element 100, the semiconductor element 100 includes light-emitting diodes
Pipe, solar cell or IC-components.The one side away from chip substrate 120 is defined in figure as above, the present embodiment
Semiconductor element is positive assembling structure, and electrode is located above semiconductor element, and semiconductor element 100 is set in the side wall of step surface
Component 200 is protected, the protection component 200 includes fibrous material, activated carbon, porous ceramics and organic group.
By technical solution of the present invention application on a light emitting diode exemplified by, light emitting diode include p-type epitaxial layer 130,
There is mesa sidewall between luminescent layer 140 and N-type epitaxy layer 150, wherein P-type layer 130 and N-type layer 150, will be nonconducting porous
Ceramics（Can also be that other have the big nanostructured electric insulation oxide of the specific surface area of adsorptivity）It is arranged on mesa sidewall
On, material such as silicate that porous material ceramics can be selected, can both play prevents epitaxial layer from causing because of conductive materials leakage
Short circuit it is abnormal, absorption suspended contaminant such as crystal-bonding adhesive glue gas caused by die bond in LED package can be played again.
Embodiment 3
Fig. 3 is refer to, the difference of the present embodiment and embodiment 2 is the cutting for protecting component 200 to be arranged on semiconductor element 100
In road side wall, because crystal-bonding adhesive 300 is located at the lower section of semiconductor element 100, Cutting Road side wall is located at lower section crystal-bonding adhesive 300 and upper
The centre position of square electrode, compared to the position of embodiment 2, the present embodiment can preferably avoid upper electrode due to crystal-bonding adhesive glue gas
Etc. influence caused by suspended contaminant, electrode is greatly decreased in bonding wire or exception golden altogether.
Embodiment 4
Fig. 4 is refer to, the present embodiment combines the design of embodiment 2 and embodiment 3, in Cutting Road side wall and step surface side wall all
Protection component 200 is made, improves the adsorption effect to suspended contaminant, ensures the chip reliability after die bond.In addition, this implementation
Protection component 200 with insulating properties sorbing material is arranged in Cutting Road side wall and step surface side wall by example can play insulation
The effect of protection.
, it is clear that the explanation of the present invention should not be construed as being limited only within above-described embodiment, but using this hair
The all possible embodiment of bright design.
Claims (14)
1. a kind of die-bonding method of semiconductor element, semiconductor element have electrode structure, suspended pollution be present in die bond region
Thing, it is characterised in that：In die bond technique, in die bond region, offer, which has, is better than adsorption capacity of the electrode material to suspended contaminant
Protection component, protection component be made up of sorptive material.
A kind of 2. die-bonding method of semiconductor element according to claim 1, it is characterised in that：During the die bond technique,
Semiconductor element is fixed using crystal-bonding adhesive, crystal-bonding adhesive is heated.
A kind of 3. die-bonding method of semiconductor element according to claim 2, it is characterised in that：The temperature of the heating is
100-200℃。
A kind of 4. die-bonding method of semiconductor element according to claim 1, it is characterised in that：The suspended contaminant
Composition includes the crystal-bonding adhesive or other suspended pollution particles used to semiconductor element die bond.
A kind of 5. die-bonding method of semiconductor element according to claim 1, it is characterised in that：The protection component is set
On substrate.
A kind of 6. die-bonding method of semiconductor element according to claim 1, it is characterised in that：Semiconductor element has side
Wall, the protection component are arranged in the side wall of semiconductor element.
A kind of 7. die-bonding method of semiconductor element according to claim 1, it is characterised in that：The protection component is from electricity
The distance of pole is less than 300mm.
A kind of 8. die-bonding method of semiconductor element according to claim 1, it is characterised in that：The electrode material includes
Au, Al, Ag or Ti.
A kind of 9. die-bonding method of semiconductor element according to claim 1, it is characterised in that：The protection component includes
Activated carbon, porous ceramics and organic group.
A kind of 10. die-bonding method of semiconductor element according to claim 1, it is characterised in that：The semiconductor element
Including light emitting diode, solar cell or IC-components.
11. a kind of semiconductor element, there is electrode structure, it is characterised in that：The semiconductor element has protection component, described
Protection component uses sorptive material, described to protect component strong to the adsorption capacity of crystal-bonding adhesive glue gas or other suspended pollution particles
In the adsorption capacity of electrode pair crystal-bonding adhesive glue gas, the protection component is made up of sorptive material.
A kind of 12. semiconductor element according to claim 11, it is characterised in that：It is described protection component include activated carbon,
Porous ceramics and organic group.
A kind of 13. semiconductor element according to claim 11, it is characterised in that：The semiconductor element includes luminous two
Pole pipe, solar cell or IC-components.
A kind of 14. semiconductor element according to claim 13, it is characterised in that：The semiconductor element is light-emitting diodes
Guan Shi, protect component not on light emitting surface of light emitting diode.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710823265.5A CN107731758B (en) | 2017-09-13 | 2017-09-13 | Die bonding method of semiconductor element and semiconductor element |
| PCT/CN2018/085130 WO2019052194A1 (en) | 2017-09-13 | 2018-04-28 | Method for die-bonding semiconductor element and semiconductor element |
| US16/816,108 US20200211861A1 (en) | 2017-09-13 | 2020-03-11 | Die bonding process for manufacturing semiconductor device and semiconductor device manufactured thereby |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710823265.5A CN107731758B (en) | 2017-09-13 | 2017-09-13 | Die bonding method of semiconductor element and semiconductor element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107731758A true CN107731758A (en) | 2018-02-23 |
| CN107731758B CN107731758B (en) | 2019-12-06 |
Family
ID=61206087
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710823265.5A Active CN107731758B (en) | 2017-09-13 | 2017-09-13 | Die bonding method of semiconductor element and semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107731758B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019052194A1 (en) * | 2017-09-13 | 2019-03-21 | 厦门三安光电有限公司 | Method for die-bonding semiconductor element and semiconductor element |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102668140A (en) * | 2009-12-18 | 2012-09-12 | 欧司朗光电半导体有限公司 | Optoelectronic component and method for producing an opto-electronic component |
| CN103026512A (en) * | 2010-07-07 | 2013-04-03 | 奥斯兰姆奥普托半导体有限责任公司 | Component and method for producing a component |
| CN105431952A (en) * | 2013-08-08 | 2016-03-23 | 奥斯兰姆奥普托半导体有限责任公司 | Optoelectronic component and method for the production thereof |
| CN206388722U (en) * | 2016-10-11 | 2017-08-08 | 惠州比亚迪实业有限公司 | A kind of light emitting diode |
-
2017
- 2017-09-13 CN CN201710823265.5A patent/CN107731758B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102668140A (en) * | 2009-12-18 | 2012-09-12 | 欧司朗光电半导体有限公司 | Optoelectronic component and method for producing an opto-electronic component |
| CN103026512A (en) * | 2010-07-07 | 2013-04-03 | 奥斯兰姆奥普托半导体有限责任公司 | Component and method for producing a component |
| CN105431952A (en) * | 2013-08-08 | 2016-03-23 | 奥斯兰姆奥普托半导体有限责任公司 | Optoelectronic component and method for the production thereof |
| CN206388722U (en) * | 2016-10-11 | 2017-08-08 | 惠州比亚迪实业有限公司 | A kind of light emitting diode |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019052194A1 (en) * | 2017-09-13 | 2019-03-21 | 厦门三安光电有限公司 | Method for die-bonding semiconductor element and semiconductor element |
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| CN107731758B (en) | 2019-12-06 |
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Effective date of registration: 20231017 Address after: Yuanqian village, Shijing Town, Nan'an City, Quanzhou City, Fujian Province Patentee after: QUANZHOU SAN'AN SEMICONDUCTOR TECHNOLOGY Co.,Ltd. Address before: 361009 no.1721-1725, Luling Road, Siming District, Xiamen City, Fujian Province Patentee before: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY Co.,Ltd. |