CN107728427A - Positive photoresist - Google Patents
Positive photoresist Download PDFInfo
- Publication number
- CN107728427A CN107728427A CN201711003755.7A CN201711003755A CN107728427A CN 107728427 A CN107728427 A CN 107728427A CN 201711003755 A CN201711003755 A CN 201711003755A CN 107728427 A CN107728427 A CN 107728427A
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- China
- Prior art keywords
- parts
- positive photoresist
- resin
- photoresist according
- metacresol
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Materials For Photolithography (AREA)
Abstract
The invention provides a kind of positive photoresist, it is characterised in that：Including following composition：1 part~20 parts phenolic resin, 1 part~3 parts etherified melamine polyimide resins, 3 parts~8 parts diazonium class sensitising agents, 0.01 part~1 part acids, 40 parts~60 parts polar solvents.The positive photoresist is by adding etherified melamine polyimide resin, in the presence of the acids such as organic acid, precuring is realized by heating, so that the positive photoresist has superelevation adhesiveness on the hydrophilic substrate surface handled without HMDS, especially silica surface has good adhesive capacity, can simplify the flow of the manufactures such as IC chip, reduce manufacturing cost and personnel's injury.
Description
Technical field
The application is related to the manufacturing field of microelectronic component, photoelectric device, and in particular to one kind has in hydrophilic substrate surface
The positive photoresist of superelevation adhesiveness.
Background technology
Photoetching compositions are largely used in the fine pattern manufacture crafts such as integrated circuit (IC), flat-panel monitor (FPD),
Such as it is used to manufacture LED chip metal conducting electrodes.Generally, accomplished scale production using lithography process, this method is included in substrate
Coating containing dynamic rays with forming film on substrate to, than more sensitive photoresist, selectively being protected under resist
The substrate in face, drying resist form dry film, by having ultraviolet (UV/Deep-UV), X-ray containing dynamic rays with evaporation solvent
After being exposed with radiating light sources such as electron beams, developer solution is reused to develop, the substrate for completing developing procedure is etched with corrosive liquid again,
And remaining light erosion resistant agent layer is removed, so as to obtain good image.Photoresist has in the adhesiveness of substrate surface to the technique
Very big influence, if adhesiveness is smaller, the embrittlement of film easily occurs.
Photoresist is different with imaging mechanism according to its chemical reaction mechanism, is divided into positive photoresist and negative photoresist.Mesh
Preceding positive photoresist is generally by adding multi-functional organic amine or improving itself and substrate with the amine of metal-complexing
Adhesiveness, but adhesiveness of this kind of positive photoresist only in metal surface increases, and hydrophilic substrate surface is glued
Attached power is limited.
In view of this, it is necessary to a kind of improved positive photoresist is provided, to solve above-mentioned technical problem.
The content of the invention
In order to one of solve the above problems, present applicant proposes a kind of positivity for having superelevation adhesiveness in hydrophilic substrate surface
Photoresist.
In order to realize foregoing invention purpose, the present invention provides a kind of positive photoresist, including following composition：1 part~20 parts
Phenolic resin, 1 part~3 parts etherified melamine polyimide resins, 3 parts~8 parts diazonium class sensitising agents, 0.01 part~1 part acids, 40 parts~
60 parts of polar solvents.
As a further improvement on the present invention, the etherified melamine polyimide resin is
Wherein R is alkyl.
As a further improvement on the present invention, the etherificate degree of the etherified melamine polyimide resin between 70%~90% it
Between.
As a further improvement on the present invention, the phenolic resin is selected from 10 parts~20 parts linear phenolic resins, 1 part~5
At least one of part full orthoresol resin, 3 parts~10 parts highly -branched degree resins, the highly -branched degree resin is metacresol, right
Cresols is polymerize obtained resin with the mixture of 2,5- xylenols with formaldehyde.
As a further improvement on the present invention, the linear phenolic resin is the mixture and formaldehyde of metacresol and paracresol
The linear phenolic resin of polymerization, metacresol:The portion rate of paracresol is between 1:1~2.5:Between 1.
As a further improvement on the present invention, the full orthoresol resin is 100% resin for facing cresols and oxymethylene polymerization.
As a further improvement on the present invention, the metacresol, the paracresol, the number of 2,5- xylenols mixing
Ratio is 67：23：10.
As a further improvement on the present invention, the positive photoresist also includes 0.5 part~phenyl ring polyhydroxy phenol more than 3 parts
Class.
As a further improvement on the present invention, the diazonium class sensitising agent be 2,2 ', 4,4 ' -4 dihydroxy benaophenonels and 2,
The carboxylate of 1,5- diazo naphthoquinone Huang acyl chlorides.
As a further improvement on the present invention, the polar solvent is selected from butyl acetate, ethyl lactate, methyl butyrate, gal
At least one of horse-butyrolactone, propylene glycol methyl ether acetate, diethylene glycol (DEG), triethylene glycol, butyl carbitol.
Beneficial effects of the present invention：The positive photoresist of the present invention, by adding etherified melamine in positive photoresist
Polyimide resin, in the presence of the acids such as organic acid, pass through heating, precrosslink so that the positive photoresist is at without HMDS
The hydrophilic substrate surface of reason has superelevation adhesiveness, especially silica surface to have good adhesive capacity, can simplify IC
The flow of the manufactures such as chip, reduce manufacturing cost and personnel's injury.
Embodiment
To make the purpose, technical scheme and advantage of the application clearer, below in conjunction with the application specific embodiment pair
Technical scheme is clearly and completely described.Obviously, described embodiment is only representative one of the application
Section Example, rather than whole embodiments.Based on the embodiment in the application, those of ordinary skill in the art are not doing
Go out under the premise of creative work the every other embodiment obtained, belong to the scope of the application protection.
The positive photoresist of the present invention, including following composition：1 part~20 parts phenolic resin, 1 part~3 parts etherified melamines
Polyimide resin, 3 parts~8 parts diazonium class sensitising agents, 0.01 part~1 part acids, 40 parts~60 parts polar solvents.By adding etherificate three
Cymel, in the presence of the acids such as organic acid, by heating realize precuring so that the positive photoresist without
The hydrophilic substrate surface of HMDS processing has superelevation adhesiveness, especially silica surface to have good adhesive capacity, can be with
Simplify the flow of the manufactures such as IC chip, reduce manufacturing cost and personnel's injury.
The phenolic resin be selected from 10 parts~20 parts linear phenolic resins, 1 part~5 parts full orthoresol resins, 3 parts~10 parts
At least one of highly -branched degree resin.
Wherein, the linear phenolic resin is metacresol and the mixture of paracresol and the novolac tree of oxymethylene polymerization
Fat, metacresol:The portion rate of paracresol is between 1:1~2.5:Between 1, such as：Metacresol:The score ratio of paracresol is 5:5,
Cresols:The score ratio of paracresol is 6:4, metacresol:The score ratio of paracresol is 7:3.
The full orthoresol resin is 100% resin for facing cresols and oxymethylene polymerization,
The highly -branched degree resin is metacresol, paracresol is polymerize to obtain with the mixture of 2,5- xylenols with formaldehyde
Resin, the metacresol, the paracresol, 2, the 5- xylenols mixing number ratio be 67：23：10.
The positive photoresist also includes 0.5 part~phenyl ring polyhydroxy phenols more than 3 parts, to improve the positive photoresist
- OH contents, improve hydrophily, promote and the effect of water-wetted surface；Such as：
The etherified melamine polyimide resin is
Wherein R is alkyl, such as methyl or ethyl；The etherificate degree of the etherified melamine polyimide resin between 70%~
Between 90%.
The acids is the organic acid such as DBSA, or the inorganic acid such as sulfuric acid, hydrochloric acid, in heating from
To catalytic action, precuring is realized, and then adhesiveness of the positive photoresist in hydrophilic surface can be improved.
The diazonium class sensitising agent be 2,2 ', the esterification of 4,4 ' -4 dihydroxy benaophenonels and 2,1,5- diazo naphthoquinone Huang acyl chlorides
Thing.
The polar solvent is selected from butyl acetate, ethyl lactate, methyl butyrate, gamma-butyrolactone, propylene glycol monomethyl ether acetic acid
At least one of ester, diethylene glycol (DEG), triethylene glycol, butyl carbitol.
The preparation method of above-mentioned photoresist is：By phenolic resin, etherified melamine polyimide resin, diazonium class sensitising agent, acids,
And after more phenyl ring polyhydroxy phenols proportionally mix, be added to polar solvent and fully dissolve, filtered with the bellows in 0.2 μm of aperture
Device is filtered, you can positive photoresist is made.
With original formulation, " 50 parts of linear phenolic resins, the phenolic resin of 50 parts of high cladodification, 6 parts of polyhydroxy phenols, 0.02 part has
The positive photoresist of machine strong acid class, 318 parts of solvents " as a comparison, using identical method in the dioxy handled without HMDS
The positive photoresist of the present invention and the positive photoresist of original formulation, thickness are coated on silicon substrate：2.7 μm, exposure：Nikon-
G7stepper；Development：TEL-ACT8,2.38%TMAH, 60s；Obtained result is as follows：
Occurring the reason for part drift glue when the positive photoresist of the present invention is online a width of 1 μm may be with bottom caused by overexposure
Portion's line width is too small relevant, it can be considered that the positive photoresist of the present invention does not also float glue under 1um lines.By this
Form is understood, positive photoresist of the invention, has superelevation adhesiveness on the hydrophilic substrate surface handled without HMDS, especially
Silica surface has good adhesive capacity.
In summary, positive photoresist of the invention, by adding etherified melamine polyimide resin in positive photoresist,
In the presence of the acids such as organic acid, pass through heating, precuring so that the positive photoresist is in the hydrophily handled without HMDS
Substrate surface has superelevation adhesiveness, especially silica surface to have good adhesive capacity, can simplify the manufacture such as IC chip
Flow, reduce manufacturing cost and personnel injury.
It should be appreciated that although this specification is described according to embodiment, not each embodiment is only only comprising one
Vertical technical scheme, this narrating mode of specification is only that those skilled in the art should be by specification for clarity
As an entirety, the technical solutions in the various embodiments may also be suitably combined, formed it will be appreciated by those skilled in the art that
Other embodiment.
Those listed above is a series of to describe illustrating only for possible embodiments of the invention in detail,
And be not used to limit the scope of the invention, all equivalent embodiments made without departing from skill spirit of the present invention or change all should
Within protection scope of the present invention.
Claims (10)
- A kind of 1. positive photoresist, it is characterised in that：Including following composition：1 part~20 parts phenolic resin, 1 part~3 parts etherificates three Cymel, 3 parts~8 parts diazonium class sensitising agents, 0.01 part~1 part acids, 40 parts~60 parts polar solvents.
- 2. positive photoresist according to claim 1, its spy is：The etherified melamine polyimide resin isWherein R is alkyl.
- 3. positive photoresist according to claim 2, it is characterised in that：The etherificate degree of the etherified melamine polyimide resin Between 70%~90%.
- 4. positive photoresist according to claim 1, it is characterised in that：The phenolic resin is selected from 10 parts~20 parts linearly At least one of phenolic resin, 1 part~5 parts full orthoresol resins, 3 parts~10 parts highly -branched degree resins, the highly -branched degree Resin is the resin that metacresol, paracresol are polymerize to obtain with the mixture of 2,5- xylenols with formaldehyde.
- 5. positive photoresist according to claim 4, it is characterised in that：The linear phenolic resin is for metacresol and to first The mixture of phenol and the linear phenolic resin of oxymethylene polymerization, metacresol:The portion rate of paracresol is between 1:1~2.5:Between 1.
- 6. positive photoresist according to claim 4, it is characterised in that：The full orthoresol resin faces cresols for 100% With the resin of oxymethylene polymerization.
- 7. positive photoresist according to claim 4, it is characterised in that：The metacresol, the paracresol, the 2,5- The number ratio of xylenol mixing is 67：23：10.
- 8. positive photoresist according to claim 1, it is characterised in that：The positive photoresist also includes 0.5 part~3 parts More phenyl ring polyhydroxy phenols.
- 9. positive photoresist according to claim 1, it is characterised in that：The diazonium class sensitising agent be 2,2 ', 4,4 ' -4 The carboxylate of dihydroxy benaophenonel and 2,1,5- diazo naphthoquinone Huang acyl chlorides.
- 10. positive photoresist according to claim 1, it is characterised in that：The polar solvent is selected from butyl acetate, lactic acid Ethyl ester, at least one in methyl butyrate, gamma-butyrolactone, propylene glycol methyl ether acetate, diethylene glycol (DEG), triethylene glycol, butyl carbitol Kind.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711003755.7A CN107728427A (en) | 2017-10-24 | 2017-10-24 | Positive photoresist |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711003755.7A CN107728427A (en) | 2017-10-24 | 2017-10-24 | Positive photoresist |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107728427A true CN107728427A (en) | 2018-02-23 |
Family
ID=61212694
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711003755.7A Pending CN107728427A (en) | 2017-10-24 | 2017-10-24 | Positive photoresist |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107728427A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112506004A (en) * | 2020-12-29 | 2021-03-16 | 安徽邦铭新材料科技有限公司 | Positive photoresist composition for liquid crystal device |
| CN113835297A (en) * | 2020-06-24 | 2021-12-24 | 深圳市万普拉斯科技有限公司 | Positive photoresist composition, method for preparing positive photoresist and glass piece |
| CN113946099A (en) * | 2021-09-28 | 2022-01-18 | 北京北旭电子材料有限公司 | Positive photoresist composition |
| CN114326304A (en) * | 2021-12-30 | 2022-04-12 | 苏州瑞红电子化学品有限公司 | Etching-resistant positive photoresist |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1975575A (en) * | 2005-12-01 | 2007-06-06 | 东进世美肯株式会社 | Lithographic glue composition |
| CN101281369A (en) * | 2007-04-02 | 2008-10-08 | 三星电子株式会社 | Photoresist composition and method for forming photoresist pattern using the same |
| CN105607418A (en) * | 2015-12-23 | 2016-05-25 | 苏州瑞红电子化学品有限公司 | High heat-resistant photoresist composition and application technology thereof |
-
2017
- 2017-10-24 CN CN201711003755.7A patent/CN107728427A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1975575A (en) * | 2005-12-01 | 2007-06-06 | 东进世美肯株式会社 | Lithographic glue composition |
| CN101281369A (en) * | 2007-04-02 | 2008-10-08 | 三星电子株式会社 | Photoresist composition and method for forming photoresist pattern using the same |
| CN105607418A (en) * | 2015-12-23 | 2016-05-25 | 苏州瑞红电子化学品有限公司 | High heat-resistant photoresist composition and application technology thereof |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113835297A (en) * | 2020-06-24 | 2021-12-24 | 深圳市万普拉斯科技有限公司 | Positive photoresist composition, method for preparing positive photoresist and glass piece |
| CN113835297B (en) * | 2020-06-24 | 2024-05-28 | 深圳市万普拉斯科技有限公司 | Positive photoresist composition, method for preparing positive photoresist, and glass member |
| CN112506004A (en) * | 2020-12-29 | 2021-03-16 | 安徽邦铭新材料科技有限公司 | Positive photoresist composition for liquid crystal device |
| CN113946099A (en) * | 2021-09-28 | 2022-01-18 | 北京北旭电子材料有限公司 | Positive photoresist composition |
| CN113946099B (en) * | 2021-09-28 | 2024-07-05 | 北京北旭电子材料有限公司 | Positive photoresist composition |
| CN114326304A (en) * | 2021-12-30 | 2022-04-12 | 苏州瑞红电子化学品有限公司 | Etching-resistant positive photoresist |
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Application publication date: 20180223 |
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