CN107728035A - The detection method and three phase mains of transistors breakdown in a kind of three phase mains - Google Patents
The detection method and three phase mains of transistors breakdown in a kind of three phase mains Download PDFInfo
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- CN107728035A CN107728035A CN201711020697.9A CN201711020697A CN107728035A CN 107728035 A CN107728035 A CN 107728035A CN 201711020697 A CN201711020697 A CN 201711020697A CN 107728035 A CN107728035 A CN 107728035A
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- phase
- line
- phase mains
- igct
- mains
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/263—Circuits therefor for testing thyristors
Abstract
The embodiments of the invention provide the detection method and three phase mains of transistors breakdown in a kind of three phase mains, on three phase mains before electricity transistors breakdown detection.Present invention method includes：When the three phase mains does not connect load, and the IGCT in the three phase mains does not turn on, the positive output end of the IGCT in each phase line in the three phase mains is connected on zero line by a filter capacitor respectively；By the IGCT of each phase in the three phase mains, an absorption capacitor in parallel, the capacitance ratio of the filter condenser and the absorption capacitor are not less than 5 respectively；Detect the present current value in each phase line of the three phase mains；If the present current value in target phase line in the three phase mains is more than the first preset threshold values, judge that the IGCT in the target phase line breaks down.
Description
Technical field
The present invention relates to electric circuit inspection field, and in particular to the detection method of transistors breakdown and three in a kind of three phase mains
Phase power supply.
Background technology
IGCT has the characteristic of silicon rectification device, can be worked under the conditions of high voltage, high current, and its course of work can
To control, be widely used in the circuits such as controlled rectification, AC voltage adjusting, contactless electronic beam switch, inversion and frequency conversion, in three-phase
In field of power supplies, also usually using IGCT as switching device, due to three phase mains have high voltage, high current characteristic,
Ensure that the IGCT in three phase mains is in normal condition, be the premise for ensureing three phase mains normal work.In view of this, for
The fault detect of IGCT in three phase mains is particularly important.
In the prior art, Publication No. CN101630854A patent of invention discloses a kind of uninterrupted power source and uninterrupted
The method for detecting bypass fault of power supply, can be used for detect uninterrupted power source bypass it is counter fill failure and bypass IGCT short circuit therefore
Barrier, its detection bypass specific detection mode of short troubles of thyristor are：The bus midpoint of UPS main circuits is passed through into fictitious load respectively
Each be connected in three lines at UPS bypass inputs end；The bus midpoint of UPS main circuits is connected to by fictitious load respectively
Each in three lines of UPS bypass output ends；The total current of the fictitious load is flowed through in detection before upper electricity, is set if total current exceedes
Determine threshold values, then judge bypass IGCT short circuit.The detection method can only judge that bypassing IGCT has short circuit, it is impossible to judge bypass
Which IGCT short circuit in three-phase circuit.Secondly, extra main road electricity is needed in the detection of bypass short troubles of thyristor
Source provides detection power supply, if between UPS main circuits and bypass when positioning remote from, the bus midpoints of UPS main circuits difference
When being connected to UPS bypass inputs end or output end by fictitious load, used connecting wire is longer.
In summary, the method for the failure of the IGCT in three phase mains in the prior art, it is impossible to accurately determine three-phase electricity
IGCT short circuit in which circuitry phase in road, secondly, it is necessary to which extra detection power supply, used connecting wire is relatively
It is long, cause circuit connection complicated.
The content of the invention
The embodiments of the invention provide the detection method and three phase mains of transistors breakdown in a kind of three phase mains, for three
The detection of transistors breakdown before phase power supply electrifying.
First aspect of the embodiment of the present invention provides a kind of detection method of transistors breakdown in three phase mains, it may include：
An IGCT is provided with each phase of the three phase mains, it is characterised in that including：
When the three phase mains does not connect load, and the IGCT in the three phase mains does not turn on, by the three phase mains
In each phase line in the positive output end of IGCT be connected to respectively by a filter capacitor on zero line；
By the IGCT of each phase in a three phase mains absorption capacitor in parallel respectively, the filter condenser with
The capacitance ratio of the absorption capacitor is not less than 5；
Detect the present current value in each phase line of the three phase mains；
If the present current value in target phase line in the three phase mains is more than the first preset threshold values, the mesh is judged
IGCT in mark phase line breaks down.
Further, the described first preset threshold values is that short circuit occurs for the IGCT in the target phase line in the three phase mains
During failure, 0.8 times of theoretical fault curre in the target phase line.
Optionally, the described first preset threshold values is that short circuit event occurs for the IGCT in the target phase line in the three phase mains
During barrier, the numerical value between 0.65 times to 0.95 times of theoretical fault curre in the target phase line.
Optionally, the connected mode of the zero line of the three phase mains and phase line is three-phase four-wire system connected mode.
Optionally, the connected mode of the zero line of the three phase mains and phase line, including：
One end of the zero line of the three phase mains passes through three filter capacitors and each phase in the three phase mains respectively
The positive input of IGCT in line is connected.
Optionally, when the present current value in the target phase line in the three phase mains is more than the first preset threshold values, institute
Stating method also includes：
The absolute value of voltage at the IGCT both ends in the target phase line is detected, if the absolute value of voltage is pre- less than second
Threshold values is put, then judges that straight-through failure occurs for the IGCT in the target phase line.
Second aspect of the embodiment of the present invention provides a kind of three phase mains, it is characterised in that
The positive output end of the IGCT in each phase line in the three phase mains is connected by a filter capacitor respectively
It is connected on zero line；
An IGCT difference absorption capacitor in parallel for each phase, the filter condenser and institute in the three phase mains
The capacitance ratio for stating absorption capacitor is not less than 5.
Optionally, current sensing means is additionally provided with each phase line of the three phase mains, for detecting corresponding phase
Present current value in line.
Optionally, the connected mode of the zero line of the three phase mains and phase line is three-phase four-wire system connected mode.
Optionally, the connected mode of the zero line of the three phase mains and phase line, including：
One end of the zero line of the three phase mains passes through three filter capacitors and each phase in the three phase mains respectively
The positive input of IGCT in line is connected.
As can be seen from the above technical solutions, the embodiment of the present invention has advantages below：
In the embodiment of the present invention, on three phase mains before electrical connection load, by the crystalline substance in each phase line in three phase mains
The positive output end of brake tube is connected on zero line by a filter capacitor respectively, while one and brilliant lock are set in each phase
Pipe shunt capacitor in parallel, it is relatively simple without additional power supply, circuit structure in the embodiment of the present invention relative to prior art
Single, applicable three phase mains is not limited only to UPS fields, and detection range is wider, after circuit connection is completed, by detecting
Whether the present current value in each phase line of three phase mains is more than the first preset threshold values, due to filter condenser electric capacity with it is in parallel
The capacitance ratio of capacitor is not less than 5 so that the current value under transistors breakdown state in each phase line of three phase mains is substantially big
Electric current under normal condition, if detecting, the present current value in the target phase line in three phase mains is more than the first preset valve
Value, then judge that the IGCT in target phase line breaks down, i.e. the embodiment of the present invention can also be determined accurately in three phase mains
IGCT in which circuitry phase breaks down.
Brief description of the drawings
Fig. 1 is one principle of detection circuit in three phase mains in the detection method of transistors breakdown in the embodiment of the present invention
Figure；
Fig. 2 is the testing process schematic diagram of the detection method of transistors breakdown in three phase mains in the embodiment of the present invention；
Another is former for the detection circuit in the detection method of transistors breakdown in three phase mains in the embodiment of the present invention by Fig. 3
Reason figure.
Embodiment
The embodiments of the invention provide the detection method and three phase mains of transistors breakdown in a kind of three phase mains, for three
The detection of transistors breakdown before phase power supply electrifying.
In order that those skilled in the art more fully understand the present invention program, below in conjunction with the embodiment of the present invention
Accompanying drawing, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is only
The embodiment of a part of the invention, rather than whole embodiments.Based on the embodiment in the present invention, ordinary skill people
The every other embodiment that member is obtained under the premise of creative work is not made, it should all belong to the model that the present invention protects
Enclose.
Term " first ", " second ", " the 3rd " in description and claims of this specification and above-mentioned accompanying drawing, "
Four " etc. be for distinguishing similar object, without for describing specific order or precedence.It should be appreciated that so use
Data can exchange in the appropriate case, so that the embodiments described herein can be with except illustrating or describing herein
Order beyond appearance is implemented.In addition, term " comprising " and " having " and their any deformation, it is intended that covering is non-exclusive
Include, be not necessarily limited to clearly arrange for example, containing the process of series of steps or unit, method, system, product or equipment
Those steps or unit gone out, but may include not list clearly or consolidate for these processes, method, product or equipment
The other steps or unit having.
In order to make it easy to understand, the idiographic flow in the embodiment of the present invention is described below, Fig. 1 and Fig. 2 is referred to, is schemed
1 is the detection circuit theory diagrams in three phase mains in the detection method of transistors breakdown in the embodiment of the present invention, and Fig. 2 is the present invention
In embodiment in three phase mains the detection method of transistors breakdown testing process schematic diagram, a kind of three-phase in the embodiment of the present invention
One embodiment of the detection method of transistors breakdown may include in power supply：
100th, the positive output end of the IGCT in each phase line in three phase mains is passed through into a filter capacitor respectively
It is connected on zero line；
In the three-phase power supply system using three-phase four-wire system, when three phase mains does not connect load, the brilliant lock in three phase mains
When pipe does not turn on, the positive output end of the IGCT in each phase line in three phase mains is connected by a filter capacitor respectively
It is connected on zero line N, such as C in Fig. 14、C5、C6It is shown.
Preferably, the connected mode of the zero line of the three phase mains in the embodiment of the present invention and phase line connects for three-phase four-wire system
Mode.Wherein, the connection status of the zero line N shown in Fig. 1 and output end can be connected to according to the duty requirements of actual circuit
Output end is connected to other ports, and specific connection state does not limit herein.
200th, by an IGCT difference absorption capacitor in parallel for each phase in three phase mains；
An absorption capacitor in parallel can be distinguished by the IGCT of each phase in three phase mains in the embodiment of the present invention, such as
C in Fig. 11、C2、C3Shown, the capacitance size of three filter condensers is identical.The electric capacity of the capacitor is less than filter capacitor, so that
When obtaining the IGCT generation short trouble in three phase mains, the impedance in the circuitry phase significantly reduces, and electric current significantly increases.
As shown in figure 1, when the IGCT in three phase mains does not break down, if the voltage of three phase mains is U, power frequency is
W, the electric capacity of shunt capacitor is C1, filter capacitor C4When, the calculation formula of monophase current is：I1=wUC1C4/(C1+C4)；
When short trouble occurs for the IGCT in three phase mains, the calculation formula of monophase current is：I2=wUC4It can be seen that I2With I1
Ratio be (C1+C4)/C1, it can be seen that work as C4With C1Ratio it is bigger, fault current I2With normal current I1Ratio it is bigger,
I.e. failure is more obvious, and false drop rate is lower, but C in practice4With C1Ratio bigger need the I that detects2With I1Size difference
Scope is bigger, and corresponding testing cost can be higher, thus, after testing cost and accuracy of detection is considered, the present invention is real
Apply preferred C in example4With C1Ratio be 5, now fault current I2With normal current I1Ratio be 6, you can according to fault current
Further detect whether IGCT occurs short trouble, it is to be understood that filtering can also be set in the embodiment of the present invention
The capacitance ratio of capacitor and absorption capacitor is not less than 5, does not limit herein specifically.
It is understood that in the embodiment of the present invention, connected for detection three phase mains in circuitry processes as shown in Figure 1
Specific steps, as the sequencing between step 100, step 200 can exchange, the specific order of connection is not done herein
Limit.
300th, the present current value in each phase line of three phase mains is detected, if present current value in target phase line is more than the
One preset threshold values, then judge that the IGCT in target phase line breaks down.
If the present current value in a certain target phase line in three phase mains is more than the first preset threshold values, target phase is judged
IGCT in line breaks down, when short circuit event occurs for setting and the IGCT in the target phase line of specific first preset threshold values
Theoretical fault curre it is related.
Preferably, the first preset threshold values in the embodiment of the present invention is the IGCT hair in the target phase line in three phase mains
During raw short trouble, 0.8 times of theoretical fault curre in target phase line.
Optionally, the first preset threshold values in the embodiment of the present invention is the IGCT hair in the target phase line in three phase mains
During raw short trouble, the numerical value between 0.65 times to 0.95 times of theoretical fault curre in target phase line.
Specifically, the theoretical fault curre in target phase line is referred to above-mentioned I2=wUC2Calculated.
In the embodiment of the present invention, on three phase mains before electrical connection load, by the crystalline substance in each phase line in three phase mains
The positive output end of brake tube is connected on zero line by a filter capacitor respectively, while one and brilliant lock are set in each phase
Pipe shunt capacitor in parallel, it is relatively simple without additional power supply, circuit structure in the embodiment of the present invention relative to prior art
Single, applicable three phase mains is not limited only to UPS fields, and detection range is wider, after circuit connection is completed, by detecting
Whether the present current value in each phase line of three phase mains is more than the first preset threshold values, due to filter condenser electric capacity with it is in parallel
The capacitance ratio of capacitor is not less than 5 so that the current value under transistors breakdown state in each phase line of three phase mains is substantially big
Electric current under normal condition, if detecting, the present current value in the target phase line in three phase mains is more than the first preset valve
Value, then judge that the IGCT in target phase line breaks down, i.e. the embodiment of the present invention can also be determined accurately in three phase mains
IGCT in which circuitry phase breaks down.
The detection method of transistors breakdown is in three-phase four-wire power supply system in three phase mains in the above-described embodiments
Middle implementation, in order to further increase being applicable for the detection method of transistors breakdown in the three phase mains in the embodiment of the present invention
Scope, one virtual zero can be constructed in the three-phase power supply system of three-phase three-wire system or other kinds of non-three-phase four-wire system
Line N, specifically, as shown in figure 3, the zero line of three phase mains and the connected mode of phase line, including：
One end of the zero line of the three phase mains passes through three filter capacitors and each phase in the three phase mains respectively
The positive input of IGCT in line is connected.
It should be noted that filter capacitor C as shown in Figure 37、C8、C9Size it is identical, its specific value can be with
C4、C5、C6It is equal or unequal, do not limit herein specifically.
On the basis of above-mentioned implementation, the detection method of transistors breakdown in a kind of three phase mains in the embodiment of the present invention
In another embodiment, when the present current value in the target phase line in three phase mains is more than the first preset threshold values, for more
Determine that straight-through failure occurs for IGCT in target phase line, the both ends that can also measure IGCT in target phase line are definitely electric
Pressure, specifically may include：
The absolute value of voltage at the IGCT both ends in target phase line is detected, if absolute value of voltage is less than the second preset threshold values,
Then judge that straight-through failure occurs for the IGCT in target phase line.
When straight-through failure does not occur for the IGCT in target phase line, the IGCT both ends can have certain voltage difference,
Specific voltage difference is related to the performance parameter of the IGCT, should when straight-through failure occurs for the IGCT in target phase line
The both end voltage of IGCT is almost nil, in view of this, the electricity at the IGCT both ends in target phase line can be detected by detection
Whether pressure absolute value occurs straight-through failure come the IGCT further judged in target phase line, and specific second preset threshold values is with being somebody's turn to do
The performance parameter of IGCT is related, does not limit herein specifically.
The embodiment of the present invention additionally provides a kind of three phase mains, as shown in figure 1, being provided with each phase of the three phase mains
One IGCT, three phase mains use three-phase four-wire system connected mode, it is characterised in that：
The positive output end of the IGCT in each phase line in three phase mains is connected to by a filter capacitor respectively
On zero line；
An IGCT difference absorption capacitor in parallel for each phase, filter condenser and absorption capacitor in three phase mains
Capacitance ratio be not less than 5.
Preferably, current sensing means is additionally provided with each phase line of the three phase mains in the embodiment of the present invention, be used for
Present current value in phase line corresponding to detection.After present current value is detected, it is possible to according to brilliant in above-mentioned three phase mains
Step in embodiment corresponding to the detection method of brake tube failure carries out the detection of transistors breakdown, and here is omitted.
In order to further increase being applicable for the detection method of transistors breakdown in the three phase mains in the embodiment of the present invention
Scope, one virtual zero can be constructed in the three-phase power supply system of three-phase three-wire system or other kinds of non-three-phase four-wire system
Line N, specifically, as shown in figure 3, the zero line of three phase mains and the connected mode of phase line, including：
One end of the zero line of the three phase mains passes through three filter capacitors and each phase in the three phase mains respectively
The positive input of IGCT in line is connected.
Three phase mains in the embodiment of the present invention, can be every by detecting detection three phase mains before upper electrical connection load
Whether present current value in one phase line more than the first preset threshold values judges whether IGCT is normal, due to the electricity of filter condenser
Hold and be not less than 5 with the capacitance ratio of shunt capacitor so that the electric current under transistors breakdown state in each phase line of three phase mains
Value is significantly greater than the electric current under normal condition, if detecting, the present current value in the target phase line in three phase mains is more than first
Preset threshold values, then judge that the IGCT in target phase line breaks down, i.e. the three phase mains in the embodiment of the present invention can be accurate
Determination three phase mains in whether break down and which circuitry phase in IGCT break down.
It is apparent to those skilled in the art that for convenience and simplicity of description, in foregoing description
Three phase mains, the corresponding process in preceding method embodiment is may be referred to, will not be repeated here.
Described above, the above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although with reference to before
Embodiment is stated the present invention is described in detail, it will be understood by those within the art that：It still can be to preceding
State the technical scheme described in each embodiment to modify, or equivalent substitution is carried out to which part technical characteristic；And these
Modification is replaced, and the essence of appropriate technical solution is departed from the spirit and scope of various embodiments of the present invention technical scheme.
Claims (10)
1. the detection method of transistors breakdown in a kind of three phase mains, a brilliant lock is provided with each phase of the three phase mains
Pipe, it is characterised in that including：
When the three phase mains does not connect load, and the IGCT in the three phase mains does not turn on, by the three phase mains
The positive output end of IGCT in each phase line is connected on zero line by a filter capacitor respectively；
By the IGCT of each phase in a three phase mains absorption capacitor in parallel respectively, the filter condenser with it is described
The capacitance ratio of absorption capacitor is not less than 5；
Detect the present current value in each phase line of the three phase mains；
If the present current value in target phase line in the three phase mains is more than the first preset threshold values, the target phase is judged
IGCT in line breaks down.
2. according to the method for claim 1, it is characterised in that the first preset threshold values is the mesh in the three phase mains
When marking the IGCT in phase line short trouble occur, 0.8 times of theoretical fault curre in the target phase line.
3. according to the method for claim 1, it is characterised in that the first preset threshold values is the mesh in the three phase mains
When marking the IGCT in phase line short trouble occur, 0.65 times to 0.95 times of theoretical fault curre in the target phase line
Between numerical value.
4. according to the method in any one of claims 1 to 3, it is characterised in that the zero line and phase line of the three phase mains
Connected mode be three-phase four-wire system connected mode.
5. according to the method in any one of claims 1 to 3, it is characterised in that the zero line and phase line of the three phase mains
Connected mode, including：
One end of the zero line of the three phase mains is respectively by each phase line in three filter capacitors and the three phase mains
The positive input of IGCT be connected.
6. according to the method in any one of claims 1 to 3, it is characterised in that when the target phase in the three phase mains
When present current value in line is more than the first preset threshold values, methods described also includes：
The absolute value of voltage at the IGCT both ends in the target phase line is detected, if the absolute value of voltage is less than the second preset valve
Value, then judge that straight-through failure occurs for the IGCT in the target phase line.
7. a kind of three phase mains, an IGCT is provided with each phase of the three phase mains, it is characterised in that
The positive output end of the IGCT in each phase line in the three phase mains is connected to by a filter capacitor respectively
On zero line；
An IGCT difference absorption capacitor in parallel for each phase, the filter condenser and the suction in the three phase mains
The capacitance ratio of current condenser is not less than 5.
8. three phase mains according to claim 6, it is characterised in that
Current sensing means is additionally provided with each phase line of the three phase mains, for detecting current flow in corresponding phase line
Value.
9. the three phase mains according to any one of claim 6 to 8, it is characterised in that the zero line of the three phase mains with
The connected mode of phase line is three-phase four-wire system connected mode.
10. the three phase mains according to any one of claim 6 to 8, it is characterised in that the zero line of the three phase mains with
The connected mode of phase line, including：
One end of the zero line of the three phase mains is respectively by each phase line in three filter capacitors and the three phase mains
The positive input of IGCT be connected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711020697.9A CN107728035A (en) | 2017-10-26 | 2017-10-26 | The detection method and three phase mains of transistors breakdown in a kind of three phase mains |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711020697.9A CN107728035A (en) | 2017-10-26 | 2017-10-26 | The detection method and three phase mains of transistors breakdown in a kind of three phase mains |
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| CN107728035A true CN107728035A (en) | 2018-02-23 |
Family
ID=61201795
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Address after: 361000 Ma Long Road 457, Torch Garden, Xiamen Torch High-tech Zone, Fujian Province Applicant after: Kehua Hengsheng Co., Ltd. Applicant after: Kehua Technology Co., Ltd., Zhangzhou Address before: 361000 torch garden, torch high tech Zone, Xiamen, Fujian 457 Applicant before: Xiamen Kehua Hengsheng Co., Ltd. Applicant before: Kehua Technology Co., Ltd., Zhangzhou |
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