CN107706168A - A kind of sub-unit structure and its method of manufacture - Google Patents
A kind of sub-unit structure and its method of manufacture Download PDFInfo
- Publication number
- CN107706168A CN107706168A CN201610650357.3A CN201610650357A CN107706168A CN 107706168 A CN107706168 A CN 107706168A CN 201610650357 A CN201610650357 A CN 201610650357A CN 107706168 A CN107706168 A CN 107706168A
- Authority
- CN
- China
- Prior art keywords
- cushion block
- metal cushion
- sub
- unit structure
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 238000000034 method Methods 0.000 title claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 63
- 239000003292 glue Substances 0.000 claims abstract description 40
- 238000009413 insulation Methods 0.000 claims abstract description 25
- 239000004568 cement Substances 0.000 claims description 9
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 238000007711 solidification Methods 0.000 claims description 2
- 230000008023 solidification Effects 0.000 claims description 2
- 238000010276 construction Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 description 4
- 239000004033 plastic Substances 0.000 description 3
- 238000009434 installation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229920002379 silicone rubber Polymers 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
- 238000009422 external insulation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3185—Partial encapsulation or coating the coating covering also the sidewalls of the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
The present invention proposes a kind of sub-unit structure and manufactures its method.The sub-unit structure includes：Chip；The emitter metal cushion block being in contact with least part emitter stage of chip；The collector electrode metal cushion block being in contact with the colelctor electrode of chip；Clad type is arranged on the insulation glue frame for being used to insulate on the surface outside the surface contacted with emitter metal cushion block and collector electrode metal cushion block of chip.The sub-unit structure is simple in construction, and number of parts is few, enormously simplify the complexity of package module, improves production efficiency.
Description
Technical field
The present invention relates to semiconductor power device, and in particular to a kind of sub-unit structure and its method of manufacture.
Background technology
In power semiconductor field, the structure of subelement affects the performance of whole package module.At present, in the prior art
Sub-unit structure usually include chip (such as IGBT), main electrode backing metal, grid spring needle and frame of plastic etc..Wherein,
Chip is arranged in frame of plastic, contacts grid spring needle one and igbt chip grid with electrode pressure by main electrode backing metal
Pole contacts, and other end contacts with PCB, forms electrical connection.
The subelement number of parts of said structure is more, and packaging technology is complicated.Meanwhile there is chip in the chip in the subelement
Between the risk discharged.
The content of the invention
For some or all of of the above-mentioned technical problem in the presence of prior art, the present invention proposes a seed list
Meta structure and its method of manufacture.The sub-unit structure is simple in construction, and number of parts is few, enormously simplify the complexity of package module
Degree, improve production efficiency.
According to an aspect of the invention, it is proposed that a kind of sub-unit structure, including：
Chip,
The emitter metal cushion block being in contact with least part emitter stage of chip,
The collector electrode metal cushion block being in contact with the colelctor electrode of chip,
Clad type is arranged on the table outside the surface contacted with emitter metal cushion block and collector electrode metal cushion block of chip
The insulation glue frame for being used to insulate on face.
In one embodiment, in a vertical direction, the glue frame that insulate is along emitter metal cushion block and collector electrode metal pad
The outer wall extension of block.
In one embodiment, in a vertical direction, the lower surface of the not prominent collector electrode metal cushion block of the glue frame that insulate.
In one embodiment, in a vertical direction, the upper surface for the glue frame that insulate is in the vertical of emitter metal cushion block
At the 1/3-2/3 of size.
In one embodiment, in a vertical direction, the upper surface protrusion emitter metal cushion block for the glue frame that insulate, and
The upper end for the glue frame that insulate forms groove corresponding with chip.
In one embodiment, emitter metal cushion block is square structure, and square emitter metal cushion block is extremely
A few angle is recessed arc, and the shape of the groove for the glue frame that insulate is corresponding with the shape of emitter metal cushion block.
In one embodiment, insulation glue frame is formed by insulation adhesive curing.
In one embodiment, shown insulating cement is red glue.
According to another aspect of the invention, it is proposed that a kind of method for manufacturing above-mentioned sub-unit structure, including following step
Suddenly：
Step 1, collector electrode metal cushion block, chip, emitter metal cushion block are put into mould simultaneously assembly jig,
Step 2, insulating cement is injected into mould,
Step 3, mould is put into solidify to insulating cement in baking oven,
Step 4, it is stripped.
In one embodiment, in step 3, solidification temperature is 150 degree, and hardening time is 5-10 hours.
Compared with prior art, it is an advantage of the current invention that the sub-unit structure is simple in construction, number of parts is few, significantly
The complexity of package module is simplified, improves production efficiency.
Brief description of the drawings
The preferred embodiments of the present invention are described in detail below in conjunction with accompanying drawing, in figure：
Fig. 1 shows the three-dimensional exploded view of the first embodiment of the subelement according to the present invention；
Fig. 2 shows the sectional view of the first embodiment of the subelement according to the present invention；
Fig. 3 shows the three-dimensional exploded view of the second embodiment of the subelement according to the present invention；
Fig. 4 shows the sectional view of the second embodiment of the subelement according to the present invention；
In the accompanying drawings, identical part uses identical reference, and accompanying drawing is not drawn according to the ratio of reality.
Embodiment
Below in conjunction with accompanying drawing, the present invention will be further described.
Fig. 1 and Fig. 2 shows the structure of sub-unit structure 100 according to the present invention.As depicted in figs. 1 and 2, sub-unit structure
100 include chip 1, emitter metal cushion block 2, collector electrode metal cushion block 3 and insulation glue frame 4.Wherein, emitter metal cushion block 2
It is in contact with least part emitter stage of chip 1, to form electrical connection.Collector electrode metal cushion block 3 connects with the colelctor electrode of chip 1
Touch, to form electrical connection.Insulation glue frame 4 is arranged on the outside of emitter metal cushion block 2 and collector electrode metal cushion block 3, for
It is coated on the surface outside the surface contacted with emitter metal cushion block 2 and collector electrode metal cushion block 3 of chip 1, to cause
Chip 1 and external insulation.Meanwhile the glue frame 4 that insulate serves support and the chip 1 that is connected, the current collection of emitter metal cushion block 2
The effect of pole backing metal 3.
It is simple in construction according to the sub-unit structure 100 of the present invention, it is not necessary in emitter metal cushion block 2 and collector electrode metal
The outside of cushion block 3 sets plastic housing again, thus, enormously simplify the structure of sub-unit structure 100, and package module 50 is answered
Miscellaneous degree, to ensure to improve production efficiency.In addition, insulation glue frame 4 is arranged on the outside of chip 1, insulating effect is served, can be carried
The working life and safety coefficient of high subelement.
It should be noted that the chip 1 in the application can be igbt chip, or FRD chips.When chip 1 is
During igbt chip, sub-unit structure 100 is also connected including one end with the grid of ICBT chips, and what one end was in contact with PCB30
Grid spring needle 5 (is shown) in Fig. 4.Ground is readily appreciated that, when chip 1 is igbt chip, use can be set in insulation glue frame 4
The grid spring eye 41 (being shown in Fig. 4) passed through in grid spring needle 5.The self structure of igbt chip or FRD chips is this
Known to art personnel, detailed description is omitted here.And it is described in the application by taking IGBT as an example.
In one embodiment, in order to play good insulation and supporting role, in a vertical direction, insulation glue frame 4 edge
The outer wall extension of emitter metal cushion block 2 and collector electrode metal cushion block 3, to protrude the upper and lower surface of chip 1.And it is
Can guarantee that collector electrode metal cushion block 3 can more easily be realized with colelctor electrode shell 10 electrically connects, in a vertical direction, insulating cement
The lower surface of the not prominent collector electrode metal cushion block 3 of frame 4.Meanwhile and in order to ensure the support effect of insulation glue frame 4, and strictly
Insulating properties, in a vertical direction, insulation glue frame 4 lower surface be in collector electrode metal cushion block 3 vertical dimension 1/3-
At 2/3.Meanwhile at the 1/3-2/3 of the upper surface vertical dimension that is in emitter metal cushion block 2 for the glue frame 4 that insulate.By this
The overall structure of sub-unit structure 100 can be optimized by setting, and ensure the good insulation effect of subelement, and be advantageous to processing system
Make.
In another embodiment, as shown in Figure 2 and Figure 4, in a vertical direction, the upper surface for the glue frame 4 that insulate protrudes hair
Emitter-base bandgap grading backing metal 2, and form groove 42 corresponding with emitter metal cushion block 2 in the upper end of insulation glue frame 4.It is,
In vertical direction, insulation glue frame 4 forms the wall shape knot for surrounding emitter metal cushion block 2 in the outside of emitter metal cushion block 2
Structure.The chip 1 of sub-unit structure 100 and extraneous insulating properties can further be increased by this set.In addition, work as core
When piece 1 is igbt chip, the thickness of insulation glue frame 4 can be improved by this set, so as to increase the depth in hole 41, is contributed to more
Fixed grid spring needle 5 well, and increase the stability that each part such as grid spring needle 5 and sub-unit structure 100 coordinates.Separately
Outside, by setting groove 42, in the outcome procedure of subsequent installation sub-unit structure 100, groove 42 and emitter stage shell can be caused
20 bulge-structure 201 is engaged, and facilitates installation operation.
According to the present invention, emitter metal cushion block 2 is square structure, and square emitter metal cushion block 2 is at least
One angle is recessed arc.The shape of the groove 42 for the glue frame 4 that insulate is corresponding with the shape of emitter metal cushion block 2.
According to the present invention, insulation glue frame 4 is formed by insulation adhesive curing.Preferably, insulating cement for certain stickiness can
With the silicon rubber of curing molding, such as red glue.
The invention further relates to the method for manufacture sub-unit structure 100.First, assembly jig.Specifically, by collector electrode metal
Cushion block 3 is placed in lower template, and chip 1 and emitter metal cushion block 2 are placed on the top of collector electrode metal cushion block 3 (also can thing
First collector electrode metal cushion block 3 and chip 1 are sintered into one), bolster matched moulds, forms a seal cavity afterwards.Then,
Carry out injecting glue.Specifically, liquid insulating glue is injected by downward mould using the manual injecting glue equipment such as automatic glue injection equipment or syringe
In the seal cavity that plate is formed, until filling whole seal cavity.Then, mould is put into the baking oven of certain temperature, passed through
Certain time is spent until insulating cement solid reaches the degree with certain toughness and intensity.For example, oven temperature is 150 DEG C, Gu
The change time is 5-10 hours.Finally, stripping operation is carried out, sub-unit structure 100 is deviate from from mould, goes the unnecessary silicon rubber in edge
Glue.
The preferred embodiment of the present invention is these are only, but the scope of the present invention is not limited thereto, any this area
Technical staff in technical scope disclosed by the invention, easily can be changed or change, and this be altered or varied all
It should be included within the scope of the present invention.Therefore, protection scope of the present invention should using the protection domain of claims as
It is accurate.
Claims (10)
1. a kind of sub-unit structure, including：
Chip,
The emitter metal cushion block being in contact with least part emitter stage of the chip,
The collector electrode metal cushion block being in contact with the colelctor electrode of the chip,
Clad type is arranged on the surface contacted with the emitter metal cushion block and the collector electrode metal cushion block of the chip
Outside surface on be used for insulate insulation glue frame.
2. sub-unit structure according to claim 1, it is characterised in that in a vertical direction, it is described insulation glue frame along
The outer wall of the emitter metal cushion block and the collector electrode metal cushion block extends.
3. sub-unit structure according to claim 2, it is characterised in that in a vertical direction, the insulation glue frame is not dashed forward
Go out the lower surface of the collector electrode metal cushion block.
4. sub-unit structure according to claim 2, it is characterised in that in a vertical direction, the upper of glue frame of insulating
Surface is at the 1/3-2/3 of the vertical dimension of the emitter metal cushion block.
5. sub-unit structure according to claim 2, it is characterised in that in a vertical direction, the upper of glue frame of insulating
Surface protrudes the emitter metal cushion block, and forms groove corresponding with the chip in the upper end of the insulation glue frame.
6. sub-unit structure according to claim 5, it is characterised in that the emitter metal cushion block is square structure,
And at least one angle of the square emitter metal cushion block is recessed arc, the shape of the groove of the insulation glue frame
Shape is corresponding with the shape of the emitter metal cushion block.
7. sub-unit structure according to claim 1, it is characterised in that the insulation glue frame is formed by insulation adhesive curing.
8. sub-unit structure according to claim 7, it is characterised in that shown insulating cement is red glue.
A kind of 9. method for manufacturing the sub-unit structure according to any one of claim 1 to 8, it is characterised in that including
Following steps：
Step 1, collector electrode metal cushion block, chip, emitter metal cushion block are put into mould simultaneously assembly jig,
Step 2, insulating cement is injected into mould,
Step 3, mould is put into solidify to insulating cement in baking oven,
Step 4, it is stripped.
10. according to the method for claim 9, it is characterised in that in step 3, solidification temperature is 150 degree, hardening time
For 5-10 hours.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610650357.3A CN107706168A (en) | 2016-08-09 | 2016-08-09 | A kind of sub-unit structure and its method of manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610650357.3A CN107706168A (en) | 2016-08-09 | 2016-08-09 | A kind of sub-unit structure and its method of manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107706168A true CN107706168A (en) | 2018-02-16 |
Family
ID=61169353
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610650357.3A Pending CN107706168A (en) | 2016-08-09 | 2016-08-09 | A kind of sub-unit structure and its method of manufacture |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107706168A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111128900A (en) * | 2018-10-30 | 2020-05-08 | 株洲中车时代电气股份有限公司 | Packaging structure of IGBT chip subunit and manufacturing method thereof |
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|---|---|---|---|---|
| CN103390642A (en) * | 2013-08-01 | 2013-11-13 | 株洲南车时代电气股份有限公司 | IGBT (insulated gate bipolar translator) device and packaging method for whole-wafer IGBT chip |
| CN104409484A (en) * | 2014-10-11 | 2015-03-11 | 株洲南车时代电气股份有限公司 | Crimp type insulated gate bipolar transistor |
| CN105047653A (en) * | 2015-07-10 | 2015-11-11 | 株洲南车时代电气股份有限公司 | IGBT (Insulated Gate Bipolar Translator) sub-module unit and packaging module thereof |
| CN105140192A (en) * | 2014-08-20 | 2015-12-09 | 株洲南车时代电气股份有限公司 | Chip module for crimping type insulation gate bipolar transistor |
| CN105679750A (en) * | 2014-11-19 | 2016-06-15 | 株洲南车时代电气股份有限公司 | Crimped semiconductor module and fabrication method thereof |
-
2016
- 2016-08-09 CN CN201610650357.3A patent/CN107706168A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103390642A (en) * | 2013-08-01 | 2013-11-13 | 株洲南车时代电气股份有限公司 | IGBT (insulated gate bipolar translator) device and packaging method for whole-wafer IGBT chip |
| CN105140192A (en) * | 2014-08-20 | 2015-12-09 | 株洲南车时代电气股份有限公司 | Chip module for crimping type insulation gate bipolar transistor |
| CN104409484A (en) * | 2014-10-11 | 2015-03-11 | 株洲南车时代电气股份有限公司 | Crimp type insulated gate bipolar transistor |
| CN105679750A (en) * | 2014-11-19 | 2016-06-15 | 株洲南车时代电气股份有限公司 | Crimped semiconductor module and fabrication method thereof |
| CN105047653A (en) * | 2015-07-10 | 2015-11-11 | 株洲南车时代电气股份有限公司 | IGBT (Insulated Gate Bipolar Translator) sub-module unit and packaging module thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111128900A (en) * | 2018-10-30 | 2020-05-08 | 株洲中车时代电气股份有限公司 | Packaging structure of IGBT chip subunit and manufacturing method thereof |
| CN111128900B (en) * | 2018-10-30 | 2021-06-08 | 株洲中车时代半导体有限公司 | Packaging structure of IGBT chip subunit and manufacturing method thereof |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180216 |
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| RJ01 | Rejection of invention patent application after publication |