CN107706106A - The preparation method of AMOLED display panels - Google Patents
The preparation method of AMOLED display panels Download PDFInfo
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- CN107706106A CN107706106A CN201710858394.8A CN201710858394A CN107706106A CN 107706106 A CN107706106 A CN 107706106A CN 201710858394 A CN201710858394 A CN 201710858394A CN 107706106 A CN107706106 A CN 107706106A
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- amoled display
- plasma
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- 229920001621 AMOLED Polymers 0.000 title claims abstract description 28
- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 239000004215 Carbon black (E152) Substances 0.000 claims abstract description 29
- -1 fluothane hydrocarbon Chemical class 0.000 claims abstract description 29
- 229960003132 halothane Drugs 0.000 claims abstract description 29
- 229930195733 hydrocarbon Natural products 0.000 claims abstract description 29
- 238000001312 dry etching Methods 0.000 claims abstract description 10
- 239000000126 substance Substances 0.000 claims abstract description 8
- 239000007789 gas Substances 0.000 claims description 38
- 239000011261 inert gas Substances 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- RWRIWBAIICGTTQ-UHFFFAOYSA-N difluoromethane Chemical compound FCF RWRIWBAIICGTTQ-UHFFFAOYSA-N 0.000 claims description 6
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 claims description 4
- 229910052717 sulfur Inorganic materials 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 abstract description 11
- 239000005864 Sulphur Substances 0.000 abstract description 11
- 229910018503 SF6 Inorganic materials 0.000 description 20
- 238000005516 engineering process Methods 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 5
- 238000002513 implantation Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 238000004073 vulcanization Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 2
- 230000002195 synergetic effect Effects 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004341 Octafluorocyclobutane Substances 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000008246 gaseous mixture Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- BCCOBQSFUDVTJQ-UHFFFAOYSA-N octafluorocyclobutane Chemical compound FC1(F)C(F)(F)C(F)(F)C1(F)F BCCOBQSFUDVTJQ-UHFFFAOYSA-N 0.000 description 1
- 235000019407 octafluorocyclobutane Nutrition 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Ceramic Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
A kind of preparation method of AMOLED display panels, comprises the following steps：To O2、SF6Ionization operation first is carried out with the mixed gas of fluothane hydrocarbon, forms the first plasma, dry etching operation first is carried out to grid using the first plasma；To Cl2And O2Mixed gas carry out double ionization operation, form the second plasma, secondarily etched operation carried out to grid using the second plasma；Doped chemical is injected into source-drain electrode using default injecting voltage.The preparation method of above-mentioned AMOLED display panels passes through to O2、SF6The dry etching operation first of the first plasma grid progress caused by ionization first is carried out with the mixed gas of fluothane hydrocarbon, can preferably reduce mixed element sulphur in grid.Preferably to improve the quality of product.
Description
Technical field
The present invention relates to AMOLED manufacturing technology fields, more particularly to a kind of preparation method of AMOLED display panels.
Background technology
At present, active organic light-emitting diode (Active Matrix Organic Lighting Emitting
Diode, AMOLED), in AMOLED backboard preparation process, due to technological fluctuation, the change of producing line state.Some defects are therewith
Increase, reduce the yields of whole producing line.AMOLED panel black is not black and white displays mura (display brightness is uneven)
The problem of the serious yield for reducing producing line.The bad producing line detection difficult of such product, (circuit is mended by circuit gamma, demura
Repay) etc. means can not eliminate.Generally occur that large batch of product is bad.
For example, the problem of element sulphur can impact AMOLED qualities is mixed into grid.
The content of the invention
Based on this, it is necessary to provide a kind of preparation for the AMOLED display panels that can reduce mixed element sulphur in grid
Method.
A kind of preparation method of AMOLED display panels, comprises the following steps：
To O2、SF6Ionization operation first is carried out with the mixed gas of fluothane hydrocarbon, forms the first plasma, using described the
One plasma carries out dry etching operation first to the grid；
To Cl2And O2Mixed gas carry out double ionization operation, formed the second plasma, using second grade from
Daughter carries out secondarily etched operation to the grid；
Doped chemical is injected into the source-drain electrode using default injecting voltage.
In one of the embodiments, in the operation of ionization first, the volume of the fluothane hydrocarbon accounts for the O2、SF6With
The volume 5%~10% of the mixed gas of fluothane hydrocarbon.
In one of the embodiments, in the operation of ionization first, O2Volume account for O2And SF6Mixed gas
Volume 28%~38%.
In one of the embodiments, in the operation of ionization first, O2Flow be 240~360sccm, SF6Stream
Measure as 500~600sccm.
In one of the embodiments, in first plasma, O, S and F-scale are (1.5~2.5)：(0.5~
1.5)：(5.5~6.5).
In one of the embodiments, in the operation operation of ionization first, also to O2、SF6With the gaseous mixture of fluothane hydrocarbon
Inert gas is passed through in body.
In one of the embodiments, in the operation of ionization first, the flow of fluothane hydrocarbon is 50~100sccm.
In one of the embodiments, the fluothane hydrocarbon is CF4、C4F8、CH2F2、CHF3And C2HF5At least one of.
In one of the embodiments, in double ionization operation operation, the O2Volume account for O2And Cl2It is mixed
Close the volume 50%~70% of gas.
In one of the embodiments, it is 25KV~35KV to preset injecting voltage, and the doped chemical is boron.
The preparation method of above-mentioned AMOLED display panels passes through to O2、SF6Ionized first with the mixed gas of fluothane hydrocarbon
Caused first plasma grid carries out dry etching operation first, can preferably reduce mixed sulphur member in the grid
Element.Preferably to improve the quality of product.
Brief description of the drawings
Fig. 1 is the preparation method flow chart of the AMOLED display panels of an embodiment of the present invention.
Embodiment
In order to facilitate the understanding of the purposes, features and advantages of the present invention, below in conjunction with the accompanying drawings to the present invention
Embodiment be described in detail.Many details are elaborated in the following description in order to fully understand this hair
It is bright.But the invention can be embodied in many other ways as described herein, those skilled in the art can be not
Similar improvement is done in the case of running counter to intension of the present invention, therefore the present invention is not limited to the specific embodiments disclosed below.
As shown in figure 1, the preparation method of the AMOLED display panels of an embodiment of the present invention comprises the following steps：
S110：To O2、SF6Ionization operation first is carried out with the mixed gas of fluothane hydrocarbon, the first plasma is formed, uses
First plasma carries out dry etching operation first to the grid.
By to O2(oxygen), SF6The mixed gas of (sulfur hexafluoride) and fluothane hydrocarbon carries out ionization operation first, can obtain
To first plasma, afterwards in the environment of vacuum high-pressure, go to bombard the grid using first plasma,
And then complete dry etching operation first.
For example, the grid is metal Mo (molybdenum), the gate surface has photoresist pattern layer, SF6Although can be right
Grid plays preferable etching effect, but S (element sulphur) members can be remained on the grid and the photoresist pattern layer
Element, by introducing fluothane hydrocarbon, after fluothane hydrocarbon is ionized, CF can be formedx, CFxThe vulcanization part of grid can be removed, for example,
CFxThe sulfureted part of the gate surface can be etched away, in addition, CFxAlso sulfureted part photoresist figure can be etched away
Pattern layer.For example, fluothane hydrocarbon and O2Combination to the etching efficiency of photoresist pattern layer than simple O2It is many soon, pass through fluothane
Hydrocarbon and O2Combination can more effectively etch taking-up and fall sulfureted part photoresist pattern layer.It so, it is possible preferably to subtract
Mixed element sulphur in few grid.Wherein, CFxRear caused plasma is ionized for fluothane hydrocarbon.
In one embodiment, in the operation of ionization first, the volume of the fluothane hydrocarbon accounts for O2、SF6With mixing for fluothane hydrocarbon
The volume 5%~10% of gas is closed, in such manner, it is possible to preferably reduce mixed element sulphur in the grid.For example, the fluothane
Hydrocarbon is CF4(tetrafluoromethane), C4F8(octafluorocyclobutane), CH2F2(difluoromethane), CHF3(fluoroform) and C2HF5(five fluorine second
At least one of alkane), for example, in the operation of ionization first, the flow of fluothane hydrocarbon is 50~100sccm.In such manner, it is possible to
Preferably reduce mixed element sulphur in the grid.
In one embodiment, in the operation of ionization first, O2Volume account for O2And SF6Mixed gas volume
28%~38%, in this way, by improving O in mixed gas2Ratio, more S elements can be combined, further to reduce institute
State mixed element sulphur in grid.For example, in the operation of ionization first, O2Flow be 240~360sccm, SF6Stream
Measure as 500~600sccm.For example, in first plasma, O, S and F-scale are (1.5~2.5)：(0.5~1.5)：
(5.5~6.5), in such manner, it is possible to further reduce mixed element sulphur in the grid.
In one embodiment, in the operation operation of ionization first, also to O2、SF6Lead to in the mixed gas of fluothane hydrocarbon
Enter inert gas, for example, the inert gas is N2The inert gas such as (nitrogen), Ar (argon gas) or He (helium), can suppress
Vacuum ionizes absorption of the chamber to oxygen, advantageously allows O2、SF6It is dispersedly more equal with the mixed gas of fluothane hydrocarbon, avoid oxygen
The fluctuation of the component of element and the introducing of pollution sources so that integrated artistic and overall producing line are operably more steady, are advantageous to
Improve the quality of product.
S120：To Cl2And O2Mixed gas carry out double ionization operation, formed the second plasma, using described second
Plasma carries out secondarily etched operation to the grid.
Pass through Cl2And O2Mixed gas carry out double ionization operation, and using second plasma to the grid
Pole carries out secondarily etched operation, can form raceway groove on the grid.
In one embodiment, in double ionization operation operation, the O2Volume account for O2And Cl2Mixed gas
Volume 50%~70%.
S130：Doped chemical is injected into the source-drain electrode using default injecting voltage.
For example, default injecting voltage is 25KV~35KV, by reducing injecting voltage, S elements are enabled to rest on table
Face, without stretching into internal structure.For example, the doped chemical is B (boron), and in step s 130,5E14~5E15cm-2(B:
BF3), by improving the implantation dosage of doped chemical, it is possible to increase the resistance homogeneity of polysilicon.
The preparation method of above-mentioned AMOLED display panels passes through to O2、SF6Ionized first with the mixed gas of fluothane hydrocarbon
Caused first plasma grid carries out dry etching operation first, can preferably reduce mixed sulphur member in the grid
Element.Preferably to improve the quality of product.
For example, the present invention eliminates AMOLED by Gate (grid) dry carving technologies and the synergic adjustment of ion implantation technology
Display black is not black and white displays mura method.For example, 1.Gate dry etchings are etched using two steps, the first step uses O2/
SF6Gas.Elemental constituent O, S in Plasma (plasma), F-scale are close to 2:1:6.Preferably use following technological parameter：
2. 5000~6000W of coil power, 500~1000W of platen power, chamber pressure 4.67~5.32pa, O2Account for SF6And O2Gas
The 28~38% of summation.3.O2Flow is 240~360sccm, SF6Flow is 500~600sccm.4. gas is passed through the step of
Add 50~200sccm N2, the inert gas such as Ar or He.Suppress chamber or ParticleO2Absorption, dispersed gas group
Point, avoid the fluctuation of O components and the introducing of pollution sources.Inert gas is simultaneously not involved in process portion.5.
Gate first steps etching uses O2/SF6/CF4Gas.The CF on the basis of 14Gas accounting be 5-10%, stream
Measure as 50~100sccm.CF4Caused CFxSimultaneously ashing (etching) falls for Product inhibiton (the vulcanization Mo on etching top layer) Mo vulcanization
PR's (photoresist pattern layer) contains S portion.Due to CF4/O2Etch PR (photoresist pattern layer) speed ratio O2It hurry up, add CF4More
The effective Sization part for removing PR.6. refer to above-mentioned Article 2, CF4Can be C4F8、CH2F2、CHF3Or C2HF5。7.CF4、
C4F8CH2F2、CHF3Or C2HF5For five kinds of gases two-by-two or during various combinations, its gas gross is consistent with above-mentioned 2 with flow.Its
Gas ratio preferably chooses 1:1、1:1:1、1:1:1:1 or 1:1:1:1:1.8.Gate second steps etching uses Cl2/O2Gas
Body.Preferably choose following technological parameter：1) 5000~6000W of coil power, 1500~2500W of platen power, chamber pressure
2.67~4pa, O2 account for Cl2And O2The 50~70% of gas summation.2)
O2Flow is 350~500sccm, Cl2Flow is 250~400sccm.9.IMP (ion implanting) source and drain ion implanting
Technique, the synergic adjustment based on Gate dry carving technologies.In principle in the step gas gross of Gate dry carving technologies first and second O2 ratio
Example increase, more S elements can be combined, IMP source and drain dopings lifting injecting voltage, reduce implantation dosage lifting P Si (polysilicon)
Resistance homogeneity.O in Gate dry carving technology gas2Ratio reduces, and IMP source and drain dopings reduce injecting voltage lifting implantation dosage
Avoid the trace doped of S elements.25~35KV injecting voltage, 5E14~5E15cm are preferably chosen for PMOS TFT-2(B:
BF3 implantation dosage).The amount S elements of Gate dry etchings are injected into active layer after remaining in IMP, RTA.The micro- doping of S elements causes
PMOS TFT VthToward negative direction skew, SS be deteriorated, Ion step-downs, cause that AMOLED panel black is black, white displays mura.
Embodiment described above only expresses the several embodiments of the present invention, and its description is more specific and detailed, but simultaneously
Therefore the limitation to the scope of the claims of the present invention can not be interpreted as.It should be pointed out that for one of ordinary skill in the art
For, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the guarantor of the present invention
Protect scope.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (10)
1. a kind of preparation method of AMOLED display panels, it is characterised in that comprise the following steps：
To O2、SF6Ionization operation first is carried out with the mixed gas of fluothane hydrocarbon, the first plasma is formed, using described first etc.
Gas ions carry out dry etching operation first to the grid；
To Cl2And O2Mixed gas carry out double ionization operation, formed the second plasma, using second plasma
Secondarily etched operation is carried out to the grid；
Doped chemical is injected into the source-drain electrode using default injecting voltage.
2. the preparation method of AMOLED display panels according to claim 1, it is characterised in that in the ionization behaviour first
In work, the volume of the fluothane hydrocarbon accounts for the O2、SF6With the volume 5%~10% of the mixed gas of fluothane hydrocarbon.
3. the preparation method of AMOLED display panels according to claim 1, it is characterised in that in the ionization behaviour first
In work, O2Volume account for O2And SF6Mixed gas volume 28%~38%.
4. the preparation method of AMOLED display panels according to claim 3, it is characterised in that in the ionization behaviour first
In work, O2Flow be 240~360sccm, SF6Flow be 500~600sccm.
5. the preparation method of AMOLED display panels according to claim 1, it is characterised in that in first plasma
In body, O, S and F-scale are (1.5~2.5)：(0.5~1.5)：(5.5~6.5).
6. the preparation method of AMOLED display panels according to claim 1, it is characterised in that in the ionization behaviour first
In operating, also to O2、SF6Inert gas is passed through with the mixed gas of fluothane hydrocarbon.
7. the preparation method of AMOLED display panels according to claim 1, it is characterised in that in the ionization behaviour first
In work, the flow of fluothane hydrocarbon is 50~100sccm.
8. the preparation method of AMOLED display panels according to claim 7, it is characterised in that the fluothane hydrocarbon is CF4、
C4F8, CH2F2, CHF3 and C2HF5At least one of.
9. the preparation method of AMOLED display panels according to claim 1, it is characterised in that grasped in the double ionization
In operating, the O2Volume account for O2And Cl2Mixed gas volume 50%~70%.
10. the preparation method of AMOLED display panels according to claim 1, it is characterised in that default injecting voltage is
25KV~35KV, the doped chemical are boron.
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| CN101207008A (en) * | 2006-12-22 | 2008-06-25 | 恩益禧电子股份有限公司 | Method for manufacturing semiconductor device |
| CN102237434A (en) * | 2010-04-26 | 2011-11-09 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Preparation method of buried contact solar cell |
| CN102417156A (en) * | 2011-11-15 | 2012-04-18 | 北京大学 | Method for etching metal molybdenum material |
| CN103035675A (en) * | 2012-10-26 | 2013-04-10 | 上海华虹Nec电子有限公司 | Radio frequency (RF) laterally diffused metal oxide semiconductor (LDMOS) component and manufacture method |
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