CN107705991B - Tantalum capacitor is reduced by the process of membrane process ESR - Google Patents
Tantalum capacitor is reduced by the process of membrane process ESR Download PDFInfo
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- CN107705991B CN107705991B CN201710883722.XA CN201710883722A CN107705991B CN 107705991 B CN107705991 B CN 107705991B CN 201710883722 A CN201710883722 A CN 201710883722A CN 107705991 B CN107705991 B CN 107705991B
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- esr
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- tantalum capacitor
- manganese nitrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/0029—Processes of manufacture
Abstract
The invention belongs to capacitor manufacturing technology fields, tantalum capacitor is especially reduced by the process of membrane process ESR, by dipping, dehydration, decomposition, mend formed, impregnate again, be dehydrated again, decompose again and subsequent processing and etc. complete processing to tantalum fuse, pass through the regulation to technological parameter, the progress for promoting decomposable process, effectively improves the effective series resistance of tantalum capacitor；And again in decomposable process, by controlling oxygen content, the phenomenon that solution splashing causes tantalum wire dirty is effectively prevented.
Description
Technical field
The invention belongs to capacitor manufacturing technology fields, and especially reduction tantalum capacitor is by the process of membrane process ESR.
Background technique
With using the complexity of route to increase, some line requirements molding chip-type solid electricity in route is used actual
Solution matter tantalum capacitor will have the effective series resistance (hereinafter referred to as ESR) of very little, and especially in filter circuit, route is to chip
The requirement of the ESR of tantalum capacitor is higher；In order to cater to the market demand, meets the use condition of client, reduce chip-type solid tantalum electricity
The ESR of container be it is imperative, reduce by the contact resistance between membrane process manganese dioxide layer, and reduce chip-type solid
One of method in tantalum capacitor ESR.
Summary of the invention
The present invention is directed to reduce by the contact resistance between membrane process manganese dioxide layer and layer, especially improving is that manganese nitrate is molten
Close adhesion between the biggish two kinds of solution of liquid span between manganese dioxide layer.
It is achieved particular by following technical scheme:
A kind of reduction tantalum capacitor is by the process of membrane process ESR, comprising the following steps:
(1) it impregnates: tantalum fuse is immersed in manganese nitrate solution A, dip time is 8~12min, and dipping temperature is (55
±5)℃；
(2) it is dehydrated: the dehydration in the baking oven that temperature is (125 ± 20 DEG C)；
(3) it decomposes: being 270 ± 20 DEG C in temperature, decomposed in the envelope furnace that oxygen content is (7 ± 3) %；
(4) it mends and is formed: in 2UVolumeUnder conditions of handle 5~10min:
(5) impregnate again: in manganese nitrate solution B, dip time is 8~12min, and dipping temperature is (55 ± 5) DEG C；
(6) it is dehydrated again: the dehydration in the baking oven that temperature is (125 ± 20 DEG C)；
(7) it decomposes again: being (85 ± 20) DEG C in temperature, decomposed in the envelope furnace that oxygen content is (12 ± 3) %；
(8) tantalum fuse obtained by step (7) subsequent processing: is subjected to the processing of graphite silver paste.
The concentration of the manganese nitrate solution A is 1.1 ± 0.2g/cm3。
The concentration of the manganese nitrate solution B is 1.3 ± 0.2g/cm3。
The step (1)~step (3) process is repeated 4 times.
The step (5)~step (7) process is repeated 3 times.
The invention has the advantages that:
The present invention by dipping, dehydration, decompose, mend and formed, impregnate, be dehydrated again again, decompose again and subsequent processing
The processing to tantalum fuse is completed to promote the progress of decomposable process by the regulation to technological parameter, effectively improve tantalum capacitor
The effective series resistance of device；And again in decomposable process, by controlling oxygen content, effectively prevents solution splashing and cause tantalum wire
Dirty phenomenon.
Compliance test result: extracting 2 frame of tantalum fuse after the formation of Y specification, is divided into 2 groups of I, II, I group is using this hair
Bright scheme handles tantalum fuse, and II group is handled tantalum fuse using traditional handicraft, and two groups use same envelope furnace
Envelope is carried out, the tantalum fuse after each group envelope is subjected to graphite silver paste respectively, 10 tantalum fuses is randomly selected for every group and carries out electric ginseng
Number compares, the result is as follows:
The comparison of 1 capacity parameter of table
Parameter comparison is lost in table 2
3 leakage current parameter comparison of table
Table 4ESR parameter comparison
It can be seen that I group tantalum fuse has in ESR parameter obviously after graphite silver paste from table 1, table 2, table 3, table 4
Reduction, other capacity, loss, electric leakage parameter and II group no significant difference.
Specific embodiment
It is limited below with reference to specific embodiment technical solution of the present invention is further, but claimed
Range is not only limited to made description.
Embodiment 1
A kind of reduction tantalum capacitor is by the process of membrane process ESR, comprising the following steps:
(1) it impregnates: tantalum fuse being immersed in manganese nitrate solution A, dip time 8min, dipping temperature is 50 DEG C；
(2) it is dehydrated: being dehydrated in the baking oven that temperature is 105 DEG C；
(3) it decomposes: being 250 DEG C in temperature, decomposed in the envelope furnace that oxygen content is 4%；
(4) it mends and is formed: in 2UVolumeUnder conditions of handle 5min:
(5) impregnate again: in manganese nitrate solution B, dip time 8min, dipping temperature is 50 DEG C；
(6) it is dehydrated: being dehydrated in the baking oven that temperature is 105 DEG C again；
(7) it decomposes again: being 65 DEG C in temperature, decomposed in the envelope furnace that oxygen content is 9%；
(8) tantalum fuse obtained by step (7) subsequent processing: is subjected to the processing of graphite silver paste.
The concentration of the manganese nitrate solution A is 0.9g/cm3。
The concentration of the manganese nitrate solution B is 1.2g/cm3。
The step (1)~step (3) process is repeated 4 times.
The step (5)~step (7) process is repeated 3 times.
Embodiment 2
A kind of reduction tantalum capacitor is by the process of membrane process ESR, comprising the following steps:
(1) it impregnates: tantalum fuse being immersed in manganese nitrate solution A, dip time 12min, dipping temperature is 60 DEG C；
(2) it is dehydrated: being dehydrated in the baking oven that temperature is 145 DEG C；
(3) it decomposes: being 290 DEG C in temperature, decomposed in the envelope furnace that oxygen content is 10%；
(4) it mends and is formed: in 2UVolumeUnder conditions of handle 10min:
(5) impregnate again: in manganese nitrate solution B, dip time 12min, dipping temperature is 60 DEG C；
(6) it is dehydrated: being dehydrated in the baking oven that temperature is 145 DEG C again；
(7) it decomposes again: being 105 DEG C in temperature, decomposed in the envelope furnace that oxygen content is 15%；
(8) tantalum fuse obtained by step (7) subsequent processing: is subjected to the processing of graphite silver paste.
The concentration of the manganese nitrate solution A is 1.3g/cm3。
The concentration of the manganese nitrate solution B is 1.4g/cm3。
The step (1)~step (3) process is repeated 4 times.
The step (5)~step (7) process is repeated 3 times.
Embodiment 3
A kind of reduction tantalum capacitor is by the process of membrane process ESR, comprising the following steps:
(1) it impregnates: tantalum fuse being immersed in manganese nitrate solution A, dip time 10min, dipping temperature is 55 DEG C；
(2) it is dehydrated: being dehydrated in the baking oven that temperature is 125；
(3) it decomposes: being 270 DEG C in temperature, decomposed in the envelope furnace that oxygen content is 7%；
(4) it mends and is formed: in 2UVolumeUnder conditions of handle 10min:
(5) impregnate again: in manganese nitrate solution B, dip time 10min, dipping temperature is 55 DEG C；
(6) it is dehydrated: being dehydrated in the baking oven that temperature is 125 again；
(7) it decomposes again: being 85 DEG C in temperature, decomposed in the envelope furnace that oxygen content is 12%；
(8) tantalum fuse obtained by step (7) subsequent processing: is subjected to the processing of graphite silver paste.
The concentration of the manganese nitrate solution A is 1.1g/cm3。
The concentration of the manganese nitrate solution B is 1.3g/cm3。
The step (1)~step (3) process is repeated 4 times.
The step (5)~step (7) process is repeated 3 times.
It is important to point out that, above embodiments and test example are only limitted to do further technical solution of the present invention herein
Elaboration and understanding, should not be understood as it is further to technical solution of the present invention limited, what those skilled in the art made
The innovation and creation of non-protruding essential characteristics and marked improvement still fall within protection category of the invention.
Claims (5)
1. reducing tantalum capacitor by the process of membrane process ESR, which comprises the following steps:
(1) it impregnates: tantalum fuse is immersed in manganese nitrate solution A, dip time is 8~12min, and dipping temperature is (55 ± 5)
℃；
(2) it is dehydrated: the dehydration in the baking oven that temperature is (125 ± 20 DEG C)；
(3) it decomposes: being 270 ± 20 DEG C in temperature, decomposed in the envelope furnace that oxygen content is (7 ± 3) %；
(4) it mends and is formed: in 2UVolumeUnder conditions of handle 5~10min:
(5) impregnate again: in manganese nitrate solution B, dip time is 8~12min, and dipping temperature is (55 ± 5) DEG C；
(6) it is dehydrated again: the dehydration in the baking oven that temperature is (125 ± 20 DEG C)；
(7) it decomposes again: being (85 ± 20) DEG C in temperature, decomposed in the envelope furnace that oxygen content is (12 ± 3) %；
(8) tantalum fuse obtained by step (7) subsequent processing: is subjected to the processing of graphite silver paste.
2. reducing tantalum capacitor as described in claim 1 by the process of membrane process ESR, which is characterized in that the manganese nitrate
The concentration of solution A is 1.1 ± 0.2g/cm3。
3. reducing tantalum capacitor as described in claim 1 by the process of membrane process ESR, which is characterized in that the manganese nitrate
The concentration of solution B is 1.3 ± 0.2g/cm3。
4. reducing tantalum capacitor as described in claim 1 by the process of membrane process ESR, which is characterized in that the step (1)
The process of~step (3) is repeated 4 times.
5. reducing tantalum capacitor as described in claim 1 by the process of membrane process ESR, which is characterized in that the step (5)
The process of~step (7) is repeated 3 times.
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| CN201710883722.XA CN107705991B (en) | 2017-09-26 | 2017-09-26 | Tantalum capacitor is reduced by the process of membrane process ESR |
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| CN107705991B true CN107705991B (en) | 2019-08-02 |
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| CN111341564B (en) * | 2020-03-13 | 2021-12-07 | 中国振华(集团)新云电子元器件有限责任公司(国营第四三二六厂) | Tantalum core coating method, tantalum core, tantalum capacitor comprising tantalum core, and application |
| CN114974901B (en) * | 2022-06-07 | 2023-05-23 | 中国振华(集团)新云电子元器件有限责任公司(国营第四三二六厂) | Coating method for improving capacitance extraction rate of tantalum capacitor |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102436937A (en) * | 2010-06-23 | 2012-05-02 | Avx公司 | Solid electrolytic capacitor for use in high voltage applications |
| CN104021940A (en) * | 2014-05-29 | 2014-09-03 | 中国振华（集团）新云电子元器件有限责任公司 | Cathode preparation process for reducing niobium oxide capacitor equivalent series resistance |
| CN104538179A (en) * | 2014-12-29 | 2015-04-22 | 中国振华（集团）新云电子元器件有限责任公司 | Axial mould-pressing tantalum capacitor and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5622746A (en) * | 1995-03-07 | 1997-04-22 | Kemet Electronics Corporation | Tantalum capacitor impregnation process |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102436937A (en) * | 2010-06-23 | 2012-05-02 | Avx公司 | Solid electrolytic capacitor for use in high voltage applications |
| CN104021940A (en) * | 2014-05-29 | 2014-09-03 | 中国振华（集团）新云电子元器件有限责任公司 | Cathode preparation process for reducing niobium oxide capacitor equivalent series resistance |
| CN104538179A (en) * | 2014-12-29 | 2015-04-22 | 中国振华（集团）新云电子元器件有限责任公司 | Axial mould-pressing tantalum capacitor and manufacturing method thereof |
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