CN107688453B - Multi-valued adiabatic multiplier unit circuit based on transmission gate structure - Google Patents

Multi-valued adiabatic multiplier unit circuit based on transmission gate structure Download PDF

Info

Publication number
CN107688453B
CN107688453B CN201710654579.7A CN201710654579A CN107688453B CN 107688453 B CN107688453 B CN 107688453B CN 201710654579 A CN201710654579 A CN 201710654579A CN 107688453 B CN107688453 B CN 107688453B
Authority
CN
China
Prior art keywords
gate
circuit
nmos transistor
pmos transistor
input end
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201710654579.7A
Other languages
Chinese (zh)
Other versions
CN107688453A (en
Inventor
张跃军
王佳伟
丁代鲁
潘钊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ningbo University
Original Assignee
Ningbo University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ningbo University filed Critical Ningbo University
Priority to CN201710654579.7A priority Critical patent/CN107688453B/en
Publication of CN107688453A publication Critical patent/CN107688453A/en
Application granted granted Critical
Publication of CN107688453B publication Critical patent/CN107688453B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F7/00Methods or arrangements for processing data by operating upon the order or content of the data handled
    • G06F7/38Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation
    • G06F7/48Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation using non-contact-making devices, e.g. tube, solid state device; using unspecified devices
    • G06F7/52Multiplying; Dividing
    • G06F7/523Multiplying only

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computational Mathematics (AREA)
  • Mathematical Analysis (AREA)
  • Mathematical Optimization (AREA)
  • Pure & Applied Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Electronic Switches (AREA)
  • Logic Circuits (AREA)

Abstract

The invention discloses a multi-value adiabatic multiplier unit circuit based on a transmission gate structure, which comprises a gate control circuit, a local product circuit and a carry circuit, wherein the gate control circuit is respectively connected with the local product circuit and the carry circuit, the gate control circuit is connected with two multipliers and a low-order carry signal to generate a text control signal and output the text control signal to the local product circuit and the carry circuit, the local product circuit outputs the local product signal, and the carry circuit outputs a high-order carry signal; has the advantages that; the product circuit and the carry circuit are both realized in a fully adiabatic mode, charges in the product circuit and the carry circuit are recovered in a fully adiabatic recovery mode, the power consumption of the circuit is reduced, and meanwhile, multi-value signals in the product circuit and the carry circuit are realized in a binary mode controlled by a gate control circuit switch, so that the working speed of the circuit can be improved, the operation period is shortened, the hardware overhead of the circuit is reduced, and the area of the product circuit and the carry circuit is smaller.

Description

Multi-valued adiabatic multiplier unit circuit based on transmission gate structure
Technical Field
The invention relates to a multi-valued adiabatic multiplier unit circuit, in particular to a multi-valued adiabatic multiplier unit circuit based on a transmission gate structure.
Background
In the development of very large scale integrated circuits, multipliers are the core of real-time image processing and digital signal processing and are often the key paths for data processing in microprocessors. The period in which the multiplier completes one operation substantially determines the dominant frequency of the microprocessor. Therefore, the research and implementation of high performance multipliers is very important for microprocessors. The performance of the multiplier unit circuit is an important operation component for constructing the multiplier, and the performance improvement plays an important role in improving the overall performance of the multiplier. The multiplication in the multiplier cell circuit is based on a large number of additions, the basic step in performing a multiplication is to generate a partial product and sum the partial products.
With the development of integrated circuit technology, the requirements on multiplier units are higher and higher, the traditional multiplier unit circuit realized by adopting a cmos device is more and more difficult to meet the requirements in the aspects of area, power consumption, operation period and the like, and the design and realization of the high-performance multiplier unit circuit are still the current hot topics due to the continuously improved high-performance operation requirements.
Therefore, the design of the multi-valued adiabatic multiplier unit circuit based on the transmission gate structure, which has the advantages of small area, low power consumption and short operation period, has important significance for the development of integrated circuits.
Disclosure of Invention
The invention aims to solve the technical problem of providing a multi-value adiabatic multiplier unit circuit based on a transmission gate structure, which has small area, low power consumption and short operation period.
The technical scheme adopted by the invention for solving the technical problems is as follows: a multi-valued adiabatic multiplier unit circuit based on a transmission gate structure comprises a gate control circuit, a local product circuit and a carry circuit, wherein the gate control circuit is provided with a first input end, a second input end, a third input end, a first output end, a second output end, a third output end, a fourth output end, a fifth output end, a sixth output end, a seventh output end, an eighth output end, a ninth output end, a first inverted output end, a second inverted output end, a third inverted output end, a fourth inverted output end, a fifth inverted output end, a sixth inverted output end, a seventh inverted output end, an eighth inverted output end, a ninth inverted output end, a clock control clock signal input end and a power clock signal input end; the local product circuit is provided with a first input end, a second input end, a third input end, a fourth input end, a fifth input end, a sixth input end, a first inverted input end, a second inverted input end, a third inverted input end, a fourth inverted input end, a fifth inverted input end, a sixth inverted input end, a clock-controlled clock signal input end, a first power clock signal input end, a second power clock signal input end, an output end and an inverted output end; the carry circuit is provided with a clock-controlled clock signal input end, a power clock signal input end, a first input end, a second input end, a third input end, a fourth input end, a fifth input end, a sixth input end, a seventh input end, a first inverted input end, a second inverted input end, a third inverted input end, a fourth inverted input end, a fifth inverted input end, a sixth inverted input end, a seventh inverted input end, an output end and an inverted output end; the first input end of the gate control circuit is a first multiplier input end of the multivalue adiabatic multiplier unit circuit and is used for accessing a first multiplier signal, the second input end of the gate control circuit is a second multiplier input end of the multivalue adiabatic multiplier unit circuit and is used for accessing a second multiplier signal, the third input end of the gate control circuit is a low-order carry signal input end of the multivalue adiabatic multiplier unit circuit and is used for accessing a low-order carry signal, the clock control clock signal input end of the gate control circuit, the clock control clock signal input end of the local product circuit and the clock control clock signal input end of the carry circuit are connected, the connection end of the clock control clock signal input end is a clock control clock signal input end of the multivalue adiabatic multiplier unit circuit, and the clock control clock signal input end of the multivalue adiabatic multiplier unit circuit is used for accessing a clock control clock signal, the power clock signal input end of the gate control circuit, the first power clock signal input end of the local product circuit and the power clock signal input end of the carry circuit are connected, the connection end of the power clock signal input end of the local product circuit is the first power clock signal input end of the multiple-valued adiabatic multiplier unit circuit, the first power clock signal input end of the multiple-valued adiabatic multiplier unit circuit is used for accessing a first power clock signal, the second power clock signal input end of the local product circuit is the second power clock signal input end of the multiple-valued adiabatic multiplier unit circuit, the second power clock signal input end of the multiple-valued adiabatic multiplier unit circuit is used for accessing a second power clock signal, the amplitude levels of the clock-controlled clock signal and the first power clock signal are the same, and the phase difference between the clock signal input end and the first power clock signal is 180 degrees, the phases of the first power clock signal and the second power clock signal are the same, and the amplitude level of the first power clock signal is 2 times of the amplitude level of the second power clock signal; the first output end of the gate control circuit is respectively connected with the first input end of the local product circuit and the first input end of the carry circuit, the second output end of the gate control circuit is respectively connected with the second input end of the local product circuit and the second input end of the carry circuit, the third output end of the gate control circuit is respectively connected with the third input end of the local product circuit and the third input end of the carry circuit, the fourth output end of the gate control circuit is respectively connected with the fourth input end of the local product circuit and the fourth input end of the carry circuit, the fifth output end of the gate control circuit is respectively connected with the fifth input end of the local product circuit and the fifth input end of the carry circuit, and the sixth output end of the gate control circuit is respectively connected with the sixth input end of the local product circuit and the sixth input end of the carry circuit, the gate control circuit has a seventh output end connected to the seventh input end of the carry circuit, a first inverted output end connected to the first inverted input end of the local product circuit and the first inverted input end of the carry circuit, a second inverted output end connected to the second inverted input end of the local product circuit and the second inverted input end of the carry circuit, a third inverted output end connected to the third inverted input end of the local product circuit and the third inverted input end of the carry circuit, a fourth inverted output end connected to the fourth inverted input end of the local product circuit and the fourth inverted input end of the carry circuit, and a fifth inverted output end connected to the fifth inverted input end of the local product circuit and the fifth inverted input end of the carry circuit The input end of the multi-valued adiabatic multiplier unit circuit is connected with the input end of the gate control circuit, the sixth inverted output end of the gate control circuit is connected with the sixth inverted input end of the local product circuit and the sixth inverted input end of the carry circuit respectively, the seventh inverted output end of the gate control circuit is connected with the seventh inverted input end of the carry circuit, the output end of the local product circuit is the local product output end of the multi-valued adiabatic multiplier unit circuit, the inverted output end of the local product circuit is the inverted local product output end of the multi-valued adiabatic multiplier unit circuit, the output end of the carry circuit is the high-order carry signal output end of the multi-valued adiabatic multiplier unit circuit, and the inverted output end of the carry circuit is the inverted high-order carry signal output end of the multi-valued adiabatic multiplier unit circuit.
The gate control circuit comprises three gate control units and nine binary inverters, wherein each gate control unit is provided with an input end, a clock control clock signal input end, a power clock signal input end, a first output end, a second output end and a third output end, the three gate control units are respectively a first gate control unit, a second gate control unit and a third gate control unit, and the nine binary inverters are respectively a first binary inverter, a second binary inverter, a third binary inverter, a fourth binary inverter, a fifth binary inverter, a sixth binary inverter, a seventh binary inverter, an eighth binary inverter and a ninth binary inverter; the first output of first gate control unit with the input of first binary phase inverter connect and its link do gate circuit's first output, first binary phase inverter's output do gate circuit's first reverse phase output, first gate control unit's second output with second binary phase inverter's input connect and its link do gate circuit's second output, second binary phase inverter's output do gate circuit's second reverse phase output, first gate control unit's third output with third binary phase inverter's input connect and its link do gate circuit's third output, third binary phase inverter's output do gate circuit's third reverse phase output, second gate control unit's first output with fourth binary phase inverter's input connect and its link do gate circuit's third output The output end of the second binary phase inverter is the fourth inverting output end of the gate control circuit, the second output end of the second gate control unit is connected with the input end of the fifth binary phase inverter, the connection end of the second gate control unit is the fifth output end of the gate control circuit, the output end of the fifth binary phase inverter is the fifth inverting output end of the gate control circuit, the third output end of the second gate control unit is connected with the input end of the sixth binary phase inverter, the connection end of the third gate control unit is the sixth output end of the gate control circuit, the output end of the sixth binary phase inverter is the sixth inverting output end of the gate control circuit, the first output end of the third gate control unit is connected with the input end of the seventh binary phase inverter, and the connection end of the first output end of the third gate control unit is the seventh output end of the gate control circuit, the output end of the seventh binary inverter is the seventh inverted output end of the gate control circuit, the second output end of the third gate control unit is connected with the input end of the eighth binary inverter, the connection end of the second binary inverter is the eighth output end of the gate control circuit, the output end of the eighth binary inverter is the eighth inverted output end of the gate control circuit, the third output end of the third gate control unit is connected with the input end of the ninth binary inverter, the connection end of the third binary inverter is the ninth output end of the gate control circuit, the output end of the ninth binary inverter is the ninth inverted output end of the gate control circuit, the clock signal input end of the first gate control unit, the clock signal input end of the second gate control unit and the clock signal input end of the third gate control unit are connected, and the connection end of the ninth binary inverter is the clock signal input end of the gate control circuit, the power clock signal input end of the first gating unit, the power clock signal input end of the second gating unit and the power clock signal input end of the third gating unit are connected, the connection end of the power clock signal input end of the third gating unit is the power clock signal input end of the gating circuit, the input end of the first gating unit is the first input end of the gating circuit, the input end of the second gating unit is the second input end of the gating circuit, and the input end of the third gating unit is the third input end of the gating circuit. The circuit has the function of converting a binary circuit into a multi-value character circuit under the traditional CMOS process, the logic level of an output signal is 0 or a power supply VDD, the stability is good, and the reliability is high.
The first gate control unit comprises a first PMOS (P-channel metal oxide semiconductor) tube, a second PMOS tube, a third PMOS tube, a fourth PMOS tube, a first NMOS tube, a second NMOS tube, a third NMOS tube, a fourth NMOS tube and a second input AND gate, wherein the second input AND gate is provided with a first input end, a second input end and an output end, the source electrode of the first PMOS tube is connected with the source electrode of the second PMOS tube, the connecting end of the first PMOS tube is the power clock signal input end of the first gate control unit, the source electrode of the third PMOS tube is connected with the source electrode of the fourth PMOS tube, and the connecting end of the third PMOS tube is the clock control clock signal input end of the first gate control unit; the gate of the first PMOS transistor, the gate of the first NMOS transistor, the gate of the third PMOS transistor and the gate of the third NMOS transistor are connected, and the connection end thereof is the input end of the first gate control unit, the drain of the first PMOS transistor, the gate of the second PMOS transistor, the drain of the first NMOS transistor and the gate of the second NMOS transistor are connected, the source of the first NMOS transistor, the source of the second NMOS transistor, the source of the third NMOS transistor and the source of the fourth NMOS transistor are all grounded, the drain of the third NMOS transistor, the gate of the fourth NMOS transistor, the drain of the third PMOS transistor and the gate of the fourth PMOS transistor are connected, the drain of the second PMOS transistor, the drain of the second NMOS transistor and the first input end of the second input and gate are connected, and the connection end thereof is the first output end of the first gate control unit, the drain electrode of the fourth PMOS tube, the drain electrode of the fourth NMOS tube and the second input end of the two-input AND gate are connected, the connection end of the two-input AND gate is the third output end of the first gate control unit, and the output end of the two-input AND gate is the second output end of the first gate control unit; the circuit structures of the second gate control unit and the third gate control unit are the same as the circuit structure of the first gate control unit. The circuit is realized by matching threshold voltages of a first PMOS tube, a first NMOS tube, a third NMOS tube and a third PMOS tube with threshold voltages of the first PMOS tube, the second PMOS tube, the third PMOS tube, a fourth PMOS tube, a first NMOS tube, a second NMOS tube, a third NMOS tube, a fourth NMOS tube and a second input AND gate, can convert a multi-valued signal into a binary control signal under a CMOS (complementary metal oxide semiconductor) process, and ensures the realization of a logic function of the circuit.
The threshold voltage of the first PMOS tube is-0.6126V, the threshold voltage of the first NMOS tube is-0.2457V, the threshold voltage of the third NMOS tube is 0.243V, and the threshold voltage of the third PMOS tube is 0.4891V. The circuit can realize maximum interval inverter threshold value discrimination under the traditional CMOS process.
The local displacement circuit comprises a fifth PMOS (P-channel metal oxide semiconductor) tube, a sixth PMOS tube, a seventh PMOS tube, an eighth PMOS tube, a ninth PMOS tube, a tenth PMOS tube, an eleventh PMOS tube, a twelfth PMOS tube, a thirteenth PMOS tube, a fourteenth PMOS tube, a fifteenth PMOS tube, a sixteenth PMOS tube, a seventeenth PMOS tube, an eighteenth PMOS tube, a nineteenth PMOS tube, a twentieth PMOS tube, a fifth NMOS tube, a sixth NMOS tube, a seventh NMOS tube, an eighth NMOS tube, a ninth NMOS tube, a tenth NMOS tube, an eleventh NMOS tube, a twelfth NMOS tube, a thirteenth NMOS tube, a fourteenth NMOS tube, a fifteenth NMOS tube, a sixteenth NMOS tube, a seventeenth NMOS tube, an eighteenth NMOS tube, a nineteenth NMOS tube and a twentieth NMOS tube; a source of the fifth PMOS transistor, a source of the sixth PMOS transistor, a drain of the fifth NMOS transistor, a drain of the sixth NMOS transistor, a source of the tenth PMOS transistor, a source of the eleventh PMOS transistor, a drain of the tenth NMOS transistor and a drain of the eleventh NMOS transistor are connected and a connection end thereof is a second power clock signal input end of the product local circuit, a source of the seventh PMOS transistor, a source of the eighth PMOS transistor, a drain of the seventh NMOS transistor, a drain of the eighth NMOS transistor, a source of the ninth PMOS transistor, a source of the sixteenth PMOS transistor, a drain of the ninth NMOS transistor, a source of the nineteenth PMOS transistor and a source of the twentieth PMOS transistor are connected and a connection end thereof is a first power clock signal input end of the product local circuit, the drain of the nineteenth NMOS transistor is connected to the drain of the twentieth NMOS transistor and the connection end thereof is the clock-controlled clock signal input end of the product circuit, the gate of the fifth NMOS transistor, the gate of the seventh PMOS transistor and the gate of the tenth NMOS transistor are connected and the connection end thereof is the second input end of the product circuit, the gate of the fifth PMOS transistor, the gate of the seventh NMOS transistor and the gate of the tenth PMOS transistor are connected and the connection end thereof is the second inverting input end of the product circuit, and the second NMOS transistor and the gate of the tenth PMOS transistor are connected and the connection end thereof is the second inverting input end of the product circuitA gate of a sixth NMOS transistor, a gate of an eighth PMOS transistor and a gate of an eleventh NMOS transistor are connected, and their connection terminals are the third input terminal of the local product circuit, a gate of the sixth PMOS transistor, a gate of the eighth PMOS transistor and a gate of the eleventh PMOS transistor are connected, and their connection terminals are the third inverting input terminal of the local product circuit, a gate of the sixteenth NMOS transistor is the first input terminal of the local product circuit, a gate of the sixteenth PMOS transistor is the first inverting input terminal of the local product circuit, a gate of the ninth NMOS transistor is the fourth input terminal of the local product circuit, a gate of the ninth PMOS transistor is the fourth inverting input terminal of the local product circuit, a gate of the twelfth NMOS transistor, a gate of the fifteenth PMOS transistor and a gate of the seventeenth NMOS transistor are connected, and their connection terminals are the fifth input terminal of the local product circuit, the grid electrode of the twelfth PMOS tube, the grid electrode of the fifteenth NMOS tube and the grid electrode of the seventeenth PMOS tube are connected, the connection ends of the grid electrodes are the fifth reverse phase input end of the local product circuit, the grid electrode of the thirteenth NMOS tube, the grid electrode of the fourteenth PMOS tube and the grid electrode of the eighteenth NMOS tube are connected, the connection ends of the grid electrodes are the sixth input end of the local product circuit, the grid electrode of the thirteenth PMOS tube, the grid electrode of the fourteenth NMOS tube and the grid electrode of the eighteenth PMOS tube are connected, the connection ends of the grid electrodes are the sixth reverse phase input end of the local product circuit, the drain electrode of the fifth PMOS tube, the source electrode of the fifth NMOS tube, the source electrode of the twelfth PMOS tube and the drain electrode of the twelfth NMOS tube are connected, the drain electrode of the sixth PMOS tube, the source electrode of the sixth NMOS tube, the source electrode of the thirteenth PMOS tube and the drain electrode of the thirteenth NMOS tube are connected, the drain electrode of the seventh PMOS tube, the source electrode of the seventh NMOS tube, the source electrode of the fourteenth PMOS tube and the drain electrode of the fourteenth NMOS tube are connected, the drain electrode of the eighth PMOS tube, the source electrode of the eighth NMOS tube, the source electrode of the fifteenth PMOS tube and the drain electrode of the fifteenth NMOS tube are connected, the drain electrode of the tenth PMOS tube, the source electrode of the tenth NMOS tube, the source electrode of the fourteenth NMOS tube, the drain electrode of the fourteenth PMOS tube, the source electrode of the fourteenth NMOS tube, the source electrode of,The source electrode of the seventeenth PMOS transistor is connected to the drain electrode of the seventeenth NMOS transistor, the drain electrode of the eleventh PMOS transistor, the source electrode of the eleventh NMOS transistor, the source electrode of the eighteenth PMOS transistor and the drain electrode of the eighteenth NMOS transistor are connected, the drain electrode of the twelfth PMOS transistor, the source electrode of the twelfth NMOS transistor, the drain electrode of the thirteenth PMOS transistor, the source electrode of the thirteenth NMOS transistor, the drain electrode of the fourteenth PMOS transistor, the source electrode of the fourteenth NMOS transistor, the drain electrode of the fifteenth PMOS transistor, the source electrode of the fifteenth NMOS transistor, the drain electrode of the nineteenth PMOS transistor, the source electrode of the nineteenth NMOS transistor, the gate electrode of the twentieth NMOS transistor and the gate electrode of the twentieth NMOS transistor are connected, and the connection end is the output end of the local product circuit, the drain electrode of the ninth PMOS transistor, the source electrode of the ninth NMOS transistor, the drain electrode of the seventeenth NMOS transistor, the drain electrode of the eighteenth NMOS transistor, the eighteenth NMOS transistor and the drain electrode of the eighteenth NMOS transistor are, The drain electrode of the sixteenth PMOS tube, the source electrode of the sixteenth NMOS tube, the drain electrode of the seventeenth PMOS tube, the source electrode of the seventeenth NMOS tube, the drain electrode of the eighteenth PMOS tube, the source electrode of the eighteenth NMOS tube, the drain electrode of the twentieth PMOS tube, the source electrode of the twentieth NMOS tube, the gate electrode of the nineteenth PMOS tube and the gate electrode of the nineteenth NMOS tube are connected, and the connecting end of the source electrode and the drain electrode is the inverted output end of the local product circuit. The circuit adopts a transmission gate structure design, and in a data recovery stage, the transmission gate comprises a transmission gate consisting of a fifth NMOS transistor and a fifth PMOS transistor, a transmission gate consisting of a sixth NMOS transistor and a sixth PMOS transistor, a transmission gate consisting of a tenth NMOS transistor and a tenth PMOS transistor, a transmission gate consisting of an eleventh NMOS transistor and an eleventh PMOS transistor, a transmission gate consisting of a twelfth NMOS transistor and a twelfth PMOS transistor, a transmission gate consisting of a thirteenth NMOS transistor and a thirteenth PMOS transistor, a transmission gate consisting of a seventeenth NMOS transistor and a seventeenth PMOS transistor, a transmission gate consisting of an eighteenth NMOS transistor and an eighteenth PMOS transistor, a transmission gate consisting of a seventh NMOS transistor and a seventh PMOS, a transmission gate consisting of an eighth NMOS transistor and an eighth PMOS, a transmission gate consisting of a ninth NMOS transistor and a ninth PMOS, a transmission gate consisting of a fourteenth NMOS transistor and a fourteenth PMOS, a transmission gate consisting of a fifteenth NMOS transistor and a fifteenth PMOS, and a sixteenth NMOS transistor and a sixteenth PMOS.A transmission gate for reducing the voltage of the signal to 0V, transmitting the charge from the output end (node P) of the local product circuit to the second power clock signal input end of the local product circuit through the transmission gate composed of the fifth NMOS transistor and the fifth PMOS transistor, the transmission gate composed of the sixth NMOS transistor and the sixth PMOS transistor, the transmission gate composed of the twelfth NMOS transistor and the twelfth PMOS transistor, and the transmission gate composed of the thirteenth NMOS transistor and the thirteenth PMOS transistor in a completely adiabatic recovery mode, transmitting the charge from the node P to the first power clock signal input end of the local product circuit through the transmission gate composed of the seventh NMOS transistor and the seventh PMOS transistor, the transmission gate composed of the eighth NMOS transistor and the eighth PMOS transistor, the transmission gate composed of the fourteenth NMOS transistor and the fourteenth PMOS transistor, and the transmission gate composed of the fifteenth NMOS transistor and the fifteenth transistor, and transmitting the charge from the node P to the first power clock signal input end of the local product circuit through the transmission gate composed of the fifth NMOS transistor and the fifth
Figure BDA0001368930430000071
The transmission gate formed by the ninth NMOS tube and the ninth PMOS tube and the transmission gate formed by the sixteenth NMOS tube and the sixteenth PMOS tube are transmitted to the first power clock signal input end of the local product circuit, and the slave node
Figure BDA0001368930430000072
The transmission gate formed by the tenth NMOS tube and the tenth PMOS tube, the transmission gate formed by the eleventh NMOS tube and the eleventh PMOS tube, the transmission gate formed by the seventeenth NMOS tube and the seventeenth PMOS tube, and the transmission gate formed by the eighteenth NMOS tube and the eighteenth PMOS tube are transmitted to the second power clock signal input end of the local product circuit, and no threshold value loss exists.
The carry circuit comprises a twenty-first PMOS (P-channel metal oxide semiconductor) tube, a twenty-second PMOS tube, a twenty-third PMOS tube, a twenty-fourth PMOS tube, a twenty-fifth PMOS tube, a twenty-sixth PMOS tube, a twenty-seventh PMOS tube, a twenty-eighth PMOS tube, a twenty-ninth PMOS tube, a thirty-fourth PMOS tube, a thirty-eleventh PMOS tube, a thirty-second PMOS tube, a thirty-third PMOS tube, a thirty-fourth PMOS tube, a thirty-fifth PMOS tube, a thirty-sixth PMOS tube, a twenty-first NMOS tube, a twenty-second NMOS tube, a twenty-third NMOS tube, a twenty-fourth NMOS tube, a twenty-fifth NMOS tube, a twenty-sixth NMOS tube, a twenty-seventh NMOS tube, a twenty-eighth NMOS tube, a twenty-ninth NMOS tube, a thirty-eleventh NMOS tube, a thirty-second NMOS tube, a thirty-third NMOS tube, a thirty-fourth NMOS tube, a thirty-fifth NMOS tube and a thirty-sixth NMOS tube, a source electrode of the twenty-first PMOS tube, a drain electrode of the twenty-second PMOS tube, a twenty-fifth NMOS tube, The drain of the twenty-second NMOS transistor, the source of the twenty-third PMOS transistor, the drain of the twenty-third NMOS transistor, the source of the twenty-fourth PMOS transistor, the drain of the twenty-fourth NMOS transistor, the source of the twenty-fifth PMOS transistor, the drain of the twenty-fifth NMOS transistor, the source of the twenty-ninth PMOS transistor, the drain of the twenty-ninth NMOS transistor, the source of the thirty-fifth PMOS transistor and the source of the thirty-sixth PMOS transistor are connected and their connection ends are the power clock signal input end of the carry circuit, the drain of the thirty-fifth NMOS transistor and the drain of the thirty-sixth NMOS transistor are connected and their connection ends are the clock signal input end of the carry circuit, the gate of the twenty-first NMOS transistor, the gate of the twenty-sixth NMOS transistor and the gate of the thirty-second NMOS transistor are connected and their connection ends are the third input end of the carry circuit, the gate of the twenty-first PMOS transistor, the gate of the twenty-sixth PMOS transistor and the gate of the thirty-second PMOS transistor are connected and the connection end thereof is the third inverting input end of the carry circuit, the gate of the twenty-second NMOS transistor and the gate of the twenty-third PMOS transistor are connected and the connection end thereof is the seventh input end of the carry circuit, the gate of the twenty-second PMOS transistor and the gate of the twenty-third NMOS transistor are connected and the connection end thereof is the seventh inverting input end of the carry circuit, the gate of the twenty-fourth NMOS transistor, the gate of the twenty-seventh NMOS transistor and the gate of the thirty-third NMOS transistor are connected and the connection end thereof is the second input end of the carry circuit, the gate of the twenty-fourth PMOS transistor, the gate of the twenty-seventh PMOS transistor and the gate of the thirty-third PMOS transistor are connected and the connection end thereof is the second inverting input end of the carry circuit, the gate of the twenty-fifth NMOS transistor is the first input end of the carry circuit, the gate of the twenty-fifth PMOS transistor is the first inverting input end of the carry circuit, the gate of the twenty-eighth NMOS transistor, the gate of the thirty-first NMOS transistor, and the gate of the thirty-fourth NMOS transistor are connected, and the connection end thereof is the fifth input end of the carry circuit, the gate of the twenty-eighth PMOS transistor, the gate of the thirty-eleventh PMOS transistor, and the gate of the thirty-fourth PMOS transistor are connected, and the connection end thereof is the fifth inverting input end of the carry circuit, the gate of the twenty-ninth NMOS transistor is the fourth input end of the carry circuit, the gate of the twenty-ninth PMOS transistor is the fourth inverting input end of the carry circuit, and the gate of the thirty-NMOS transistor is the sixth input end of the carry circuit, the gate of the thirtieth PMOS transistor is the sixth inverting input terminal of the carry circuit, the drain of the twenty-first PMOS transistor, the source of the twenty-first NMOS transistor, the source of the thirty-first PMOS transistor and the drain of the thirty-second NMOS transistor are connected, the drain of the twenty-second PMOS transistor, the source of the twenty-second NMOS transistor, the source of the twenty-sixth PMOS transistor, the drain of the twenty-sixth NMOS transistor, the source of the twenty-seventh PMOS transistor and the drain of the twenty-seventh NMOS transistor are connected, the drain of the twenty-sixth PMOS transistor, the source of the twenty-sixth NMOS transistor, the drain of the thirty-seventh PMOS transistor and the source of the thirty-eleventh PMOS transistor are connected, the drain of the twenty-seventh PMOS transistor, the source of the twenty-seventh NMOS transistor, the drain of the thirty-second NMOS transistor and the source of the thirty-second NMOS transistor are connected, the drain of the twenty-third PMOS transistor, the source of the twenty-third NMOS transistor, the source of the thirty-third PMOS transistor, the drain of the thirty-third NMOS transistor, the source of the twenty-eighth PMOS transistor and the drain of the twenty-eighth NMOS transistor are connected, the drain of the twenty-fourth PMOS transistor, the source of the twenty-fourth NMOS transistor, the source of the thirty-fourth PMOS transistor and the drain of the thirty-fourth NMOS transistor are connected, the drain of the thirty-fourth PMOS transistor, the source of the thirty-fifth NMOS transistor, the drain of the thirty-eleventh PMOS transistor, the source of the thirty-eleventh NMOS transistor, the drain of the thirty-second PMOS transistor, the source of the thirty-second NMOS transistor, the drain of the thirty-fifth PMOS transistor, the source of the thirty-fifth NMOS transistor, the gate of the thirty-sixth PMOS transistor and the gate of the thirty-sixth NMOS transistor are connected, and the connection end thereof is the output end of the carry circuit, the drain electrode of the twenty-fifth PMOS transistor, the source electrode of the twenty-fifth NMOS transistor, the drain electrode of the twenty-eighth PMOS transistor, the source electrode of the twenty-eighth NMOS transistor, the drain electrode of the twenty-ninth PMOS transistor, the source electrode of the twenty-ninth NMOS transistor, the drain electrode of the thirty-third PMOS transistor, the source electrode of the thirty-third NMOS transistor, the drain electrode of the thirty-fourth PMOS transistor, the source electrode of the thirty-fourth NMOS transistor, the drain electrode of the thirty-sixth PMOS transistor, the source electrode of the thirty-sixth NMOS transistor, the gate electrode of the thirty-fifth PMOS transistor, and the gate electrode of the thirty-fifth NMOS transistor are connected, and the connection end thereof is the inverted output end of the carry circuit. The circuit is designed by adopting a transmission gate structure, and in a data recovery stage, the circuit comprises a transmission gate consisting of a twenty-first NMOS (N-channel metal oxide semiconductor) tube and a twenty-first PMOS (P-channel metal oxide semiconductor) tube, a transmission gate consisting of a twenty-second NMOS tube and a twenty-second PMOS tube, a transmission gate consisting of a twenty-third NMOS tube and a twenty-third PMOS tube, a transmission gate consisting of a twenty-fourth NMOS tube and a twenty-fourth PMOS tube, a transmission gate consisting of a twenty-fifth NMOS tube and a twenty-fifth PMOS tube, a transmission gate consisting of a twenty-sixth NMOS tube and a twenty-sixth PMOS tube, a transmission gate consisting of a twenty-seventh NMOS tube and a twenty-seventh PMOS tube, a transmission gate consisting of a twenty-eighth NMOS tube and a twenty-eighth PMOS tube, a transmission gate consisting of a twenty-ninth NMOS tube and a twenty-ninth PMOS tube, a transmission gate consisting of a thirty NMOS tube and a thirty PMOS tube, a transmission gate consisting of a thirty-eleventh NMOS tube and a thirty-second PMOS tube, a transmission gate consisting of a thirty-second PMOS tube and a, The transfer gate composed of a thirty-third NMOS transistor and a thirty-third PMOS transistor, the transfer gate composed of a thirty-fourth NMOS transistor and a thirty-fourth PMOS transistor, the signal voltage is reduced to 0V, and the charge passes through the transfer gate composed of the twenty-first NMOS transistor and the twenty-first PMOS transistor, the transfer gate composed of the twenty-second NMOS transistor and the twenty-second PMOS transistor, the transfer gate composed of the twenty-third NMOS transistor and the twenty-third PMOS transistor, the transfer gate composed of the twenty-fourth NMOS transistor and the twenty-fourth PMOS transistor, the transfer gate composed of the twenty-fifth NMOS transistor and the twenty-fifth PMOS transistor, the transfer gate composed of the twenty-sixth NMOS transistor and the twenty-sixth PMOS transistor, the transfer gate composed of the twenty-seventh NMOS transistor and the twenty-seventh PMOS transistor, the transfer gate composed of the twenty-eighth NMOS transistor and the twenty-eighth PMOS transistor, the transfer gate composed of the twenty-ninth NMOS transistor and the twenty-ninth PMOS transistor, and the transfer gate composed of the twenty-ninth PMOS transistor, The transmission gate formed by the thirty-second NMOS transistor and the thirty-third PMOS transistor, the transmission gate formed by the thirty-first NMOS transistor and the thirty-first PMOS transistor, the transmission gate formed by the thirty-second NMOS transistor and the thirty-second PMOS transistor, the transmission gate formed by the thirty-third NMOS transistor and the thirty-third PMOS transistor, and the transmission gate formed by the thirty-fourth NMOS transistor and the thirty-fourth PMOS transistor are transmitted to the power clock input end of the carry circuit, and threshold loss does not exist.
The two-input and gate comprises a thirty-seventh PMOS tube, a thirty-eighth PMOS tube, a thirty-ninth PMOS tube, a thirty-seventh NMOS tube, a thirty-eighth NMOS tube and a thirty-ninth NMOS tube, wherein the source electrode of the thirty-seventh PMOS tube, the source electrode of the thirty-eighth PMOS tube and the source electrode of the thirty-ninth PMOS tube are all connected with a power supply, the grid electrode of the thirty-seventh PMOS tube is connected with the grid electrode of the thirty-seventh NMOS tube, the connection end of the thirty-seventh PMOS tube is the first input end of the two-input and gate, the grid electrode of the thirty-eighth PMOS tube is connected with the grid electrode of the thirty-eighth NMOS tube, the connection end of the thirty-eighth PMOS tube is the second input end of the two-input and gate, the drain electrode of the thirty-seventh PMOS tube, the drain electrode of the thirty-seventh NMOS tube, the drain electrode of the thirty-eighth PMOS tube, the grid electrode of the thirty-ninth PMOS tube and the gate of the thirty-ninth NMOS tube are connected, the source electrode of the thirty-seventh NMOS tube is connected with the drain electrode of the thirty-eighth NMOS tube, andthe drain of the thirty-ninth PMOS transistor is connected to the drain of the thirty-ninth NMOS transistor, and the connection end of the drain of the thirty-ninth PMOS transistor is the output end of the two-input and gate, and the source of the thirty-eighth NMOS transistor and the source of the thirty-ninth NMOS transistor are respectively grounded. The circuit is composed of text signals under the traditional CMOS process0x0And2x2direct generation of1x1The function of (2) reduces the generation circuit of the multi-valued signal and the hardware expense of the circuit.
Compared with the prior art, the invention has the advantages that the multivalued adiabatic multiplier unit circuit based on the transmission gate structure is constructed by the gate control circuit, the local product circuit and the carry circuit, the gate control circuit is provided with a first input end, a second input end, a third input end, a first output end, a second output end, a third output end, a fourth output end, a fifth output end, a sixth output end, a seventh output end, an eighth output end, a ninth output end, a first inverted output end, a second inverted output end, a third inverted output end, a fourth inverted output end, a fifth inverted output end, a sixth inverted output end, a seventh inverted output end, an eighth inverted output end, a ninth inverted output end, a clock-controlled clock signal input end and a power clock signal input end; the local bit product circuit is provided with a first input end, a second input end, a third input end, a fourth input end, a fifth input end, a sixth input end, a first inverted input end, a second inverted input end, a third inverted input end, a fourth inverted input end, a fifth inverted input end, a sixth inverted input end, a clock control clock signal input end, a first power clock signal input end, a second power clock signal input end, an output end and an inverted output end; the carry circuit is provided with a clock-controlled clock signal input end, a power clock signal input end, a first input end, a second input end, a third input end, a fourth input end, a fifth input end, a sixth input end, a seventh input end, a first inverted input end, a second inverted input end, a third inverted input end, a fourth inverted input end, a fifth inverted input end, a sixth inverted input end, a seventh inverted input end, an output end and an inverted output end; the first input end of the gate control circuit is a first multiplier input end of the multivalue adiabatic multiplier unit circuit and is used for accessing a first multiplier signal, the second input end of the gate control circuit is a second multiplier input end of the multivalue adiabatic multiplier unit circuit and is used for accessing a second multiplier signal, the third input end of the gate control circuit is a low-order carry signal input end of the multivalue adiabatic multiplier unit circuit and is used for accessing a low-order carry signal, a clock control clock signal input end of the gate control circuit, a clock control clock signal input end of the local product circuit and a clock control clock signal input end of the carry circuit are connected, the connecting end of the gate control circuit and the clock control clock signal input end of the local product circuit is connected with the clock control clock signal input end of the carry circuit, the clock control clock signal input end of the gate control circuit, the first power clock signal input end of the local product circuit and the power clock signal input end of the carry circuit are connected, and the first power clock signal input end of the multivalued adiabatic multiplier unit circuit is used for accessing a first power clock signal, the second power clock signal input end of the local product circuit is used for accessing a second power clock signal input end of the multivalued adiabatic multiplier unit circuit, the second power clock signal input end of the multivalued adiabatic multiplier unit circuit is used for accessing a second power clock signal, the amplitude levels of the clock-controlled clock signal and the first power clock signal are the same, the phase difference between the clock-controlled clock signal and the first power clock signal is 180 degrees, the phases of the first power clock signal and the second power clock signal are the same, and the amplitude level of the first power clock signal is 2 times that of the second power clock signal; the first output end of the gate control circuit is respectively connected with the first input end of the local product circuit and the first input end of the carry circuit, the second output end of the gate control circuit is respectively connected with the second input end of the local product circuit and the second input end of the carry circuit, the third output end of the gate control circuit is respectively connected with the third input end of the local product circuit and the third input end of the carry circuit, the fourth output end of the gate control circuit is respectively connected with the fourth input end of the local product circuit and the fourth input end of the carry circuit, the fifth output end of the gate control circuit is respectively connected with the fifth input end of the local product circuit and the fifth input end of the carry circuit, the sixth output end of the gate control circuit is respectively connected with the sixth input end of the local product circuit and the sixth input end of the carry circuit, the seventh output end of the gate control circuit is connected with the seventh input end of the carry circuit, and the first inverting output end of the gate control circuit is respectively connected with the first inverting input end of the local product circuit and the first inverting input The phase input ends are connected, a second inverted output end of the gate control circuit is respectively connected with a second inverted input end of the local product circuit and a second inverted input end of the carry circuit, a third inverted output end of the gate control circuit is respectively connected with a third inverted input end of the local product circuit and a third inverted input end of the carry circuit, a fourth inverted output end of the gate control circuit is respectively connected with a fourth inverted input end of the local product circuit and a fourth inverted input end of the carry circuit, a fifth inverted output end of the gate control circuit is respectively connected with a fifth inverted input end of the local product circuit and a fifth inverted input end of the carry circuit, a sixth inverted output end of the gate control circuit is respectively connected with a sixth inverted input end of the local product circuit and a sixth inverted input end of the carry circuit, and a seventh inverted output end of the gate control circuit is connected with a seventh inverted input end of the carry circuit; the product circuit and the carry circuit are both realized in a fully adiabatic way, the charges in the product circuit are recovered in a fully adiabatic recovery way, the power consumption of the circuit is reduced, and simultaneously, the multi-valued signals in the product circuit are realized in a binary way controlled by a gate control circuit switch, so that the working speed of the circuit can be improved, the operation period can be shortened, the hardware expense of the circuit can be reduced, and the area of the product circuit and the carry circuit is smaller.
Drawings
FIG. 1 is a block diagram of a multi-valued adiabatic multiplier cell circuit of the present invention;
FIG. 2(a) is a symbol diagram of a gate control circuit of the multivalued adiabatic multiplier cell circuit of the present invention;
FIG. 2(b) is a block diagram of a gating circuit of the multivalued adiabatic multiplier cell circuit of the present invention;
FIG. 2(c) is a symbolic diagram of a first gate control unit of the multi-valued adiabatic multiplier cell circuit of the present invention;
FIG. 3 is a circuit diagram of a first gate control cell of the multi-valued adiabatic multiplier cell circuit of the present invention;
FIG. 4 is a circuit diagram of a local product circuit of the multi-valued adiabatic multiplier cell circuit of the present invention;
FIG. 5 is a circuit diagram of a carry circuit of the multi-valued adiabatic multiplier cell circuit of the present invention;
FIG. 6 is a waveform diagram of a clock signal of a multi-valued adiabatic multiplier cell circuit of the present invention;
FIG. 7 is a circuit diagram of a two-input AND gate of the multi-valued adiabatic multiplier cell circuit of the present invention;
FIG. 8 is a simulation diagram of the multivalued adiabatic multiplier cell circuit of the present invention.
Detailed Description
The invention is described in further detail below with reference to the accompanying examples.
The first embodiment is as follows: as shown in fig. 1, fig. 2(a) and fig. 6, a multiple-valued adiabatic multiplier unit circuit based on a transmission gate structure includes a gate control circuit 1, a local product circuit 2 and a carry circuit 3, where the gate control circuit 1 has a first input terminal, a second input terminal, a third input terminal, a first output terminal, a second output terminal, a third output terminal, a fourth output terminal, a fifth output terminal, a sixth output terminal, a seventh output terminal, an eighth output terminal, a ninth output terminal, a first inverted output terminal, a second inverted output terminal, a third inverted output terminal, a fourth inverted output terminal, a fifth inverted output terminal, a sixth inverted output terminal, a seventh inverted output terminal, an eighth inverted output terminal, a ninth inverted output terminal, a clocked clock signal input terminal and a power clock signal input terminal; the local product circuit 2 has a first input terminal, a second input terminal, a third input terminal, a fourth input terminal, a fifth input terminal, a sixth input terminal, a first inverted input terminal, a second inverted input terminal, a third inverted input terminal, a fourth inverted input terminal, a fifth inverted input terminal, a sixth inverted input terminal, a clock-controlled clock signal input terminal, a first power clock signal input terminal, a second power clock signal input terminal, an output terminal, and an inverted output terminal; the carry circuit 3 has a clocked clock signal input terminal, a power clock signal input terminal, a first input terminal, a second input terminal, a third input terminal, and a fourth input terminalA fifth input terminal, a sixth input terminal, a seventh input terminal, a first inverting input terminal, a second inverting input terminal, a third inverting input terminal, a fourth inverting input terminal, a fifth inverting input terminal, a sixth inverting input terminal, a seventh inverting input terminal, an output terminal, and an inverting output terminal; the first input end of the gate control circuit 1 is a first multiplier input end of a multivalued adiabatic multiplier unit circuit and is used for accessing a first multiplier signal MndThe second input end of the gate control circuit 1 is a second multiplier input end of the multivalued adiabatic multiplier unit circuit, and is used for accessing a second multiplier signal MerThe third input end of the gate control circuit 1 is a low-order carry signal input end of the multi-valued adiabatic multiplier unit circuit and is used for accessing a low-order carry signal CI, the clock control clock signal input end of the gate control circuit 1, the clock control clock signal input end of the local product circuit 2 and the clock control clock signal input end of the carry circuit 3 are connected, the connection end of the input end is a clock control clock signal input end of the multi-valued adiabatic multiplier unit circuit, and the clock control clock signal input end of the multi-valued adiabatic multiplier unit circuit is used for accessing a clock control clock signal
Figure BDA0001368930430000131
The power clock signal input end of the gate control circuit 1, the first power clock signal input end of the local product circuit 2 and the power clock signal input end of the carry circuit 3 are connected, the connection end of the first power clock signal input end is the first power clock signal input end of the multiple-valued adiabatic multiplier unit circuit, the first power clock signal input end of the multiple-valued adiabatic multiplier unit circuit is used for being connected with a first power clock signal phi, the second power clock signal input end of the local product circuit 2 is the second power clock signal input end of the multiple-valued adiabatic multiplier unit circuit, the second power clock signal input end of the multiple-valued adiabatic multiplier unit circuit is used for being connected with a second power clock signal phi 1, and a clock-controlled clock signal is generated
Figure BDA0001368930430000141
The amplitude level of the first power clock signal phi is the same as that of the second power clock signal phi, the phase difference between the first power clock signal phi and the second power clock signal phi 1 is 180 degrees, the phases of the first power clock signal phi and the second power clock signal phi 1 are the same, and the first power isThe amplitude level of the clock signal phi is 2 times the amplitude level of the second power clock signal phi 1; the first output end of the gate control circuit 1 is respectively connected with the first input end of the local product circuit 2 and the first input end of the carry circuit 3, the second output end of the gate control circuit 1 is respectively connected with the second input end of the local product circuit 2 and the second input end of the carry circuit 3, the third output end of the gate control circuit 1 is respectively connected with the third input end of the local product circuit 2 and the third input end of the carry circuit 3, the fourth output end of the gate control circuit 1 is respectively connected with the fourth input end of the local product circuit 2 and the fourth input end of the carry circuit 3, the fifth output end of the gate control circuit 1 is respectively connected with the fifth input end of the local product circuit 2 and the fifth input end of the carry circuit 3, the sixth output end of the gate control circuit 1 is respectively connected with the sixth input end of the local product circuit 2 and the sixth input end of the carry circuit 3, the seventh output end of the gate control circuit 1 is connected with the seventh input end of the carry circuit 3, a first inverted output end of the gate control circuit 1 is respectively connected with a first inverted input end of the local product circuit 2 and a first inverted input end of the carry circuit 3, a second inverted output end of the gate control circuit 1 is respectively connected with a second inverted input end of the local product circuit 2 and a second inverted input end of the carry circuit 3, a third inverted output end of the gate control circuit 1 is respectively connected with a third inverted input end of the local product circuit 2 and a third inverted input end of the carry circuit 3, a fourth inverted output end of the gate control circuit 1 is respectively connected with a fourth inverted input end of the local product circuit 2 and a fourth inverted input end of the carry circuit 3, a fifth inverted output end of the gate control circuit 1 is respectively connected with a fifth inverted input end of the local product circuit 2 and a fifth inverted input end of the carry circuit 3, a sixth inverted output end of the gate control circuit 1 is respectively connected with a sixth inverted input end of the local product circuit 2 and a sixth inverted input end of the carry circuit 3, the seventh inverting output terminal of the gate control circuit 1 is connected to the seventh inverting input terminal of the carry circuit 3, the output terminal of the local product circuit 2 is the local product output terminal of the multiple-valued adiabatic multiplier unit circuit, the inverting output terminal of the local product circuit 2 is the inverting local product output terminal of the multiple-valued adiabatic multiplier unit circuit, the output terminal of the carry circuit 3 is the high-order carry signal output terminal of the multiple-valued adiabatic multiplier unit circuit, and the carry signal input terminal is connected to the third inverting input terminal of the carry circuit 3The inverted output end of the bit circuit 3 is the inverted high-order carry signal output end of the multivalued adiabatic multiplier unit circuit.
In this embodiment, as shown in fig. 2(b) and 2(c), the gate control circuit 1 includes three gate control units and nine binary inverters, each gate control unit has an input end, a clock signal input end, a power clock signal input end, a first output end, a second output end, and a third output end, the three gate control units are a first gate control unit T1, a second gate control unit T2, and a third gate control unit T3, and the nine binary inverters are a first binary inverter NOT1, a second binary inverter NOT2, a third binary inverter NOT3, a fourth binary inverter NOT4, a fifth binary inverter NOT5, a sixth binary inverter NOT6, a seventh binary inverter NOT7, an eighth binary inverter NOT8, and a ninth binary inverter NOT 9; a first output end of the first gate control unit T1 is connected to an input end of the first binary inverter NOT1, and a connection end thereof is a first output end of the gate control circuit 1, an output end of the first binary inverter NOT1 is a first inverted output end of the gate control circuit 1, a second output end of the first gate control unit T1 is connected to an input end of the second binary inverter NOT2, and a connection end thereof is a second output end of the gate control circuit 1, an output end of the second binary inverter NOT2 is a second inverted output end of the gate control circuit 1, a third output end of the first gate control unit T1 is connected to an input end of the third binary inverter NOT3, and a connection end thereof is a third output end of the gate control circuit 1, an output end of the third binary inverter NOT3 is a third inverted output end of the gate control circuit 1, a first output end of the second gate control unit T2 is connected to an input end of the fourth binary inverter NOT4, and a connection end thereof is a fourth output end of the gate control circuit 1, the output end of the fourth binary inverter NOT4 is a fourth inverted output end of the gate control circuit 1, the second output end of the second gate control unit T2 is connected with the input end of the fifth binary inverter NOT5, the connection end of the second binary inverter NOT5 is a fifth output end of the gate control circuit 1, the output end of the fifth binary inverter NOT5 is a fifth inverted output end of the gate control circuit 1, the third output end of the second gate control unit T2 is connected with the input end of the sixth binary inverter NOT6, the connection end of the third gate control unit T2 is a sixth output end of the gate control circuit 1, the output end of the sixth binary inverter NOT6 is a sixth inverted output end of the gate control circuit 1, the first output end of the third gate control unit T3 is connected with the input end of the seventh binary inverter NOT7, the connection end of the seventh output end of the gate control circuit 1, the output end of the seventh binary inverter NOT7 is a seventh inverted output end of the gate control circuit 1, the second output end of the third gate control unit T3 is connected with the eighth binary inverter NOT8, the connection end of An output terminal, an output terminal of the eighth binary inverter NOT8 is an eighth inverted output terminal of the gate control circuit 1, a third output terminal of the third gate control unit T3 is connected to an input terminal of the ninth binary inverter NOT9, a connection terminal thereof is a ninth output terminal of the gate control circuit 1, an output terminal of the ninth binary inverter NOT9 is a ninth inverted output terminal of the gate control circuit 1, a clock control clock signal input terminal of the first gate control unit T1, a clock control clock signal input terminal of the second gate control unit T2 and a clock control clock signal input terminal of the third gate control unit T3 are connected, a connection terminal thereof is a clock control clock signal input terminal of the gate control circuit 1, a power clock signal input terminal of the first gate control unit T1, a power clock signal input terminal of the second gate control unit T2 and a power clock signal input terminal of the third gate control unit T3 are connected, and a connection terminal thereof is a power clock signal input terminal of the gate control circuit 1, the input terminal of the first gate unit T1 is the first input terminal of the gate control circuit 1, the input terminal of the second gate unit T2 is the second input terminal of the gate control circuit 1, and the input terminal of the third gate unit T3 is the third input terminal of the gate control circuit 1.
In this embodiment, as shown in fig. 3, the first gate control unit T1 includes a first PMOS transistor P1, a second PMOS transistor P2, a third PMOS transistor P3, a fourth PMOS transistor P4, a first NMOS transistor N1, a second NMOS transistor N2, a third NMOS transistor N3, a fourth NMOS transistor N4, AND a second input AND gate 1, where the second input AND gate 1 has a first input terminal, a second input terminal, AND an output terminal, a source of the first PMOS transistor P1 is connected to a source of the second PMOS transistor P2, AND a connection terminal thereof is a power clock signal input terminal of the first gate control unit T1, a source of the third PMOS transistor P3 is connected to a source of the fourth PMOS transistor P4, AND a connection terminal thereof is a clock signal input terminal of the first gate control unit T1; the gate of the first PMOS transistor P1, the gate of the first NMOS transistor N1, the gate of the third PMOS transistor P3 AND the gate of the third NMOS transistor N3 are connected AND their connection terminals are input terminals of the first gate control unit T1, the drain of the first PMOS transistor P1, the gate of the second PMOS transistor P2, the drain of the first NMOS transistor N1 AND the gate of the second NMOS transistor N2 are connected to ground, the source of the first NMOS transistor N1, the source of the second NMOS transistor N2, the source of the third NMOS transistor N3 AND the source of the fourth NMOS transistor N4 are connected to ground, the drain of the third NMOS transistor N3, the gate of the fourth NMOS transistor N4, the drain of the third PMOS transistor P3 AND the gate of the fourth PMOS transistor P589 are connected, the drain of the second PMOS transistor P2, the drain of the second NMOS transistor N2 AND the first input terminal of the second gate control unit N1 are connected AND the first input terminal of the gate control unit T1 AND the drain of the fourth gate control unit N1 AND the second gate control unit N867 AND the drain of the fourth gate control unit N1 AND the fourth gate control unit N867, the output end of the two-input AND gate AND1 is a second output end of the first gate unit T1; the circuit structures of the second gate-controlling unit T2 and the third gate-controlling unit T3 are the same as the circuit structure of the first gate-controlling unit T1.
In this embodiment, the threshold voltage of the first PMOS transistor P1 is-0.6126V, the threshold voltage of the first NMOS transistor N1 is-0.2457V, the threshold voltage of the third NMOS transistor N3 is 0.243V, and the threshold voltage of the third PMOS transistor P3 is 0.4891V.
In this embodiment, as shown in fig. 4, the local product circuit 2 includes a fifth PMOS transistor P5, a sixth PMOS transistor P6, a seventh PMOS transistor P7, an eighth PMOS transistor P8, a ninth PMOS transistor P8, a tenth PMOS transistor P8, an eleventh PMOS transistor P8, a twelfth PMOS transistor P8, a thirteenth PMOS transistor P8, a fourteenth PMOS transistor P8, a fifteenth PMOS transistor P8, a sixteenth PMOS transistor P8, a seventeenth PMOS transistor P8, an eighteenth PMOS transistor P8, a nineteenth PMOS transistor P8, a twentieth PMOS transistor P8, a fifth NMOS transistor N8, a sixth NMOS transistor N8, a seventh NMOS transistor N8, an eighth NMOS transistor N8, a ninth NMOS transistor N8, a tenth NMOS transistor N8, an eleventh NMOS transistor N8, a twelfth NMOS transistor N8, a thirteenth NMOS transistor N8, a fourteenth NMOS transistor N8, a fifteenth NMOS transistor N8, a seventeenth NMOS transistor N8, a nineteenth NMOS transistor N8, a seventeenth NMOS transistor N8, a nineteenth NMOS transistor N8; a source electrode of a fifth PMOS tube P5, a source electrode of a sixth PMOS tube P6, a drain electrode of a fifth NMOS tube N5, a drain electrode of a sixth NMOS tube N6, a source electrode of a tenth PMOS tube P10, a source electrode of an eleventh PMOS tube P11, a drain electrode of a tenth NMOS tube N10 and a drain electrode of an eleventh NMOS tube N11 are connected and a connection end thereof is a second power clock signal input end of the product circuit 2, a source electrode of a seventh PMOS tube P7, a source electrode of an eighth PMOS tube P8, a drain electrode of a seventh NMOS tube N7, a drain electrode of an eighth NMOS tube N8, a source electrode of a ninth PMOS tube P9, a source electrode of a sixteenth PMOS tube P16, a drain electrode of a ninth NMOS tube N9, a drain electrode of a sixteenth NMOS tube N16, a source electrode of a nineteenth PMOS tube P19 and a source electrode of a twentieth PMOS tube P20 are connected and a connection end thereof is a first power clock signal input end of the product circuit 2, a nineteenth PMOS tube P19 and a drain electrode of the clock signal input end thereof is a nineteenth clock signal input end 20 and a drain electrode of the product circuit N20 and a, the grid of the fifth NMOS transistor N5, the grid of the seventh PMOS transistor P7 and the grid of the tenth NMOS transistor N10 are connected and the connection end is the second input end of the local product circuit 2, the grid of the fifth PMOS transistor P5, the grid of the seventh NMOS transistor N7 and the grid of the tenth PMOS transistor P10 are connected and the connection end is the second inverting input end of the local product circuit 2, the grid of the sixth NMOS transistor N6, the grid of the eighth PMOS transistor P8 and the grid of the eleventh NMOS transistor N11 are connected and the connection end is the third input end of the local product circuit 2, the grid of the sixth PMOS transistor P6, the grid of the eighth NMOS transistor N8 and the grid of the eleventh PMOS transistor P11 are connected and the connection end is the third inverting input end of the local product circuit 2, the grid of the sixteenth NMOS transistor N16 is the first input end of the local product circuit 2, the grid of the sixteenth PMOS transistor P16 is the ninth inverting input end of the first NMOS transistor N9, the gate of the ninth PMOS transistor P9 is the fourth inverting input terminal of the local product circuit 2, the gates of the twelfth and fifteenth PMOS transistors P15 and N17 are connected and the connection end is the fifth input terminal of the local product circuit 2, the gates of the twelfth and fifteenth PMOS transistors P12 and N15 and P17 are connected and the connection end is the fifth inverting input terminal of the local product circuit 2, the gate of the thirteenth NMOS transistor N13, the gate of the fourteenth PMOS transistor P14 and the gate of the eighteenth NMOS transistor N18 are connected and the connection end is the sixth input terminal of the local product circuit 2, the gate of the thirteenth PMOS transistor P13, the gate of the fourteenth NMOS transistor N14 and the gate of the eighteenth PMOS transistor P18 are connected and the connection end is the sixth inverting input terminal of the local product circuit 2, the drain of the fifth PMOS transistor P5, the source of the fifth NMOS transistor P5 and the source of the twelfth NMOS transistor N12 are connected and the source of the twelfth NMOS transistor N12, a drain of a sixth PMOS transistor P6, a source of a sixth NMOS transistor N6, a source of a thirteenth PMOS transistor P13 and a drain of a thirteenth NMOS transistor N13, a drain of a seventh PMOS transistor P7, a source of a seventh NMOS transistor N7, a source of a fourteenth PMOS transistor P14 and a drain of a fourteenth NMOS transistor N14, a drain of an eighth PMOS transistor P8, a source of an eighth NMOS transistor N8, a source of a fifteenth PMOS transistor P15 and a drain of a fifteenth NMOS transistor N15, a drain of a tenth PMOS transistor P10, a source of a tenth NMOS transistor N10, a source of a seventeenth PMOS transistor P17 and a drain of a seventeenth NMOS transistor N17, a drain of an eleventh PMOS transistor P11, a source of an eleventh NMOS transistor N11, a source of an eighteenth PMOS transistor P18 and a drain of an eighteenth NMOS transistor N18, a drain of a twelfth PMOS transistor P12, a source of a thirteenth NMOS transistor N12, a source of a fourteenth PMOS transistor P12, a fourteenth NMOS transistor N12, a drain of a fourteenth PMOS transistor N12 and a drain of a fourteenth PMOS transistor N12, The drain of the fifteenth PMOS transistor P15, the source of the fifteenth NMOS transistor N15, the drain of the nineteenth PMOS transistor P19, the source of the nineteenth NMOS transistor N19, the gate of the twentieth PMOS transistor P20 and the gate of the twentieth NMOS transistor N20 are connected and their connection terminals are the output terminal of the product circuit 2, the drain of the ninth PMOS transistor P9, the source of the ninth NMOS transistor N9, the drain of the sixteenth PMOS transistor P16, the source of the sixteenth NMOS transistor N16, the drain of the seventeenth PMOS transistor P17, the source of the seventeenth NMOS transistor N17, the drain of the eighteenth PMOS transistor P18, the source of the eighteenth NMOS transistor N18, the drain of the twentieth PMOS transistor P20, the source of the twentieth NMOS transistor N20, the gate of the nineteenth PMOS transistor P19 and the gate of the nineteenth NMOS transistor N19 are connected and their connection terminals are the inverse phase of the product circuit 2.
In this embodiment, as shown in fig. 5, the carry circuit 3 includes a twenty-first PMOS transistor P21, a twenty-second PMOS transistor P22, a twenty-third PMOS transistor P23, a twenty-fourth PMOS transistor P24, a twenty-fifth PMOS transistor P25, a twenty-sixth PMOS transistor P26, a twenty-seventh PMOS transistor P27, a twenty-eighth PMOS transistor P28, a twenty-ninth PMOS transistor P29, a thirty-sixth PMOS transistor P30, a thirty-eleventh PMOS transistor P30, a thirty-second PMOS transistor P30, a thirty-third PMOS transistor P30, a thirty-fourth PMOS transistor P30, a thirty-fifth PMOS transistor P30, a thirty-sixth PMOS transistor P30, a twenty-first NMOS transistor N30, a twenty-second NMOS transistor N30, a twenty-third NMOS transistor N30, a twenty-fourth NMOS transistor N30, a twenty-fifth NMOS transistor N30, a twenty-sixth PMOS transistor N30, a twenty-sixth NMOS transistor N30, a twenty-eighth NMOS transistor N30, a thirty-fourth NMOS transistor N30, a thirty-fifth NMOS transistor N30, a thirty-ninth NMOS transistor N30, a thirty-eighth NMOS transistor N30, a thirty-fifth NMOS transistor N, A thirty-fifth NMOS transistor N35 and a thirty-sixth NMOS transistor N36, a source of a twenty-first PMOS transistor P21, a drain of a twenty-first NMOS transistor N21, a source of a twenty-second PMOS transistor P22, a drain of a twenty-second NMOS transistor N22, a source of a twenty-third PMOS transistor P23, a drain of a twenty-third NMOS transistor N23, a source of a twenty-fourth PMOS transistor P24, a drain of a twenty-fourth NMOS transistor N24, a source of a twenty-fifth PMOS transistor P25, a drain of a twenty-fifth NMOS transistor N25, a source of a twenty-ninth PMOS transistor P29, a drain of a twenty-ninth NMOS transistor N29, a source of a thirty-fifth transistor P35, and a source of a thirty-sixth PMOS transistor P36, which are connected, and a connection terminal of which is a power clock signal input terminal of the carry 3, a thirty-fifth NMOS transistor N35, a drain of a thirty-sixth NMOS transistor N36, a drain of a connection terminal of a thirty-sixth NMOS transistor N463, a gate of a connection terminal of a twenty-fifth NMOS transistor N26, and a gate of a thirty-sixth clock signal input terminal of a twenty-fifth NMOS transistor N463, a gate of a twenty-fifth NMOS transistor N26 A gate of the twenty-first PMOS transistor P21, a gate of the twenty-sixth PMOS transistor P26, and a gate of the thirty-second PMOS transistor P32 are connected and connection terminals thereof are third inverting input terminals of the carry circuit 3, a gate of the twenty-second NMOS transistor N22 and a gate of the twenty-third PMOS transistor P23 are connected and connection terminals thereof are seventh input terminals of the carry circuit 3, a gate of the twenty-second PMOS transistor P22 and a gate of the twenty-third NMOS transistor N23 are connected and connection terminals thereof are seventh inverting input terminals of the carry circuit 3, a gate of the twenty-fourth NMOS transistor N24, a gate of the twenty-seventh NMOS transistor N27, and a gate of the thirty-third NMOS transistor N33 are connected and connection terminals thereof are second input terminals of the carry circuit 3, a gate of the twenty-fourth PMOS transistor P24, a gate of the twenty-seventh PMOS transistor P27, and a gate of the thirty-third PMOS transistor P33 are connected and connection terminals thereof are second inverting input terminals of the carry circuit 3, a gate of the twenty-fifth inverting NMOS transistor N25 is a first inverting input terminal of the carry circuit 3, the grid of the twenty-fifth PMOS tube P25 is the first inverting input end of the carry circuit 3, the grid of the twenty-eighth NMOS tube N28, the grid of the thirty-eleventh NMOS tube N31 and the grid of the thirty-fourth NMOS tube N34 are connected, the connection end of the grid is the fifth input end of the carry circuit 3, the grid of the twenty-eighth PMOS tube P28, the grid of the thirty-eleventh PMOS tube P31 and the grid of the thirty-fourth PMOS tube P34 are connected, the connection end of the grid is the fifth inverting input end of the carry circuit 3, the grid of the twenty-ninth NMOS tube N29 is the fourth input end of the carry circuit 3, the grid of the twenty-ninth PMOS tube P29 is the fourth inverting input end of the carry circuit 3, the grid of the thirty-NMOS tube N30 is the sixth input end of the carry circuit 3, the grid of the thirty-fifth NMOS tube P30 is the sixth inverting input end of the carry circuit 3, the drain of the twenty-first PMOS tube P21, the source of the twenty-first NMOS tube N21, the source of the thirty-fourth PMOS tube P30 and the thirty-NMOS tube N30, a drain electrode of a twenty-second PMOS tube P22, a source electrode of a twenty-second NMOS tube N22, a source electrode of a twenty-sixth PMOS tube P26, a drain electrode of a twenty-sixth NMOS tube N26, a source electrode of a twenty-seventh PMOS tube P27 and a drain electrode of a twenty-seventh NMOS tube N27 are connected, a drain electrode of a twenty-sixth PMOS tube P26, a source electrode of a twenty-sixth NMOS tube N26, a drain electrode of a thirty-eleventh NMOS tube N31 and a source electrode of a thirty-eleventh PMOS tube P31 are connected, a drain electrode of a twenty-seventh PMOS tube P27, a source electrode of a twenty-seventh NMOS tube N27, a drain electrode of a thirty-second PMOS tube N32 and a source electrode of a thirty-second PMOS tube P32 are connected, a drain electrode of a twenty-third PMOS tube P23, a source electrode of a twenty-third NMOS tube N23, a source electrode of a thirty-third PMOS tube P33, a drain electrode of a twenty-eighth PMOS tube P639, a drain electrode of a twenty-fourth PMOS tube P8653 and a fourth NMOS tube P828653 and a fourth PMOS tube N8653 are connected, a drain of the thirty-first PMOS transistor P30, a source of the thirty-second NMOS transistor N30, a drain of the thirty-first PMOS transistor P31, a source of the thirty-first NMOS transistor N31, a drain of the thirty-second PMOS transistor P32, a source of the thirty-second NMOS transistor N32, a drain of the thirty-fifth PMOS transistor P35, a source of the thirty-fifth NMOS transistor N35, a gate of the thirty-sixth PMOS transistor P36, and a gate of the thirty-sixth NMOS transistor N36 are connected and a connection end thereof is an output end of the carry circuit 3, a drain of the twenty-fifth PMOS transistor P25, a source of the twenty-fifth NMOS transistor N25, a drain of the twenty-eighth PMOS transistor P28, a source of the twenty-eighth NMOS transistor N28, a drain of the twenty-ninth PMOS transistor P29, a source of the twenty-ninth NMOS transistor N29, a drain of the thirty-third PMOS transistor P33, a source of the thirty-third NMOS transistor N33, a drain of the thirty-fourth PMOS transistor P34, a source of the thirty-fourth PMOS transistor P585, a source of the thirty-sixth NMOS transistor N36, a thirty-sixth NMOS transistor P57324, a, The gate of the thirty-fifth PMOS transistor P35 is connected to the gate of the thirty-fifth NMOS transistor N35, and the connection terminal is the inverted output terminal of the carry circuit 3.
Example two: the present embodiment is substantially the same as the present embodiment, except that in the present embodiment, as shown in fig. 7, the two-input AND gate AND1 includes a thirty-seventh PMOS transistor P37, a thirty-eighth PMOS transistor P38, a thirty-ninth PMOS transistor P39, a thirty-seventh NMOS transistor N37, a thirty-eighth NMOS transistor N38 AND a thirty-ninth NMOS transistor N39, the source of the thirty-seventh PMOS transistor P37, the source of the thirty-eighth PMOS transistor P38 AND the source of the thirty-ninth PMOS transistor P39 are all powered on, the gate of the thirty-seventh PMOS transistor P37 AND the gate of the thirty-seventh NMOS transistor N37 are connected AND their connection ends are the first input end of the two-input AND gate 8, the gate of the thirty-eighth PMOS transistor P38 AND the gate of the thirty-eighth PMOS transistor N38 are connected AND their connection ends are the second input end of the two-input AND gate 1, the drain of the seventh PMOS transistor P37, the drain of the thirty-seventh PMOS transistor P3684, the drain of the thirty-eighth PMOS transistor P38 AND the thirty-ninth NMOS transistor P39 AND the thirty-ninth NMOS transistor N39 are connected, the source of the thirty-seventh NMOS transistor N37 is connected to the drain of the thirty-eighth NMOS transistor N38, the drain of the thirty-ninth PMOS transistor P39 is connected to the drain of the thirty-ninth NMOS transistor N39, AND the connection terminal is the output terminal of the two-input AND gate AND1, AND the source of the thirty-eighth NMOS transistor N38 AND the source of the thirty-ninth NMOS transistor N39 are grounded, respectively.
Under the TSMC 65 nanometer CMOS process condition, a spectrum simulation tool of Cadence software is adopted to simulate the multivalued adiabatic multiplier unit circuit, and the simulation result is shown in figure 8. As can be seen from fig. 8, the multi-valued adiabatic multiplier cell circuit has a correct logic function.

Claims (7)

1. A multivalued adiabatic multiplier unit circuit based on a transmission gate structure is characterized by comprising a gate control circuit, a local product circuit and a carry circuit, wherein the gate control circuit is provided with a first input end, a second input end, a third input end, a first output end, a second output end, a third output end, a fourth output end, a fifth output end, a sixth output end, a seventh output end, an eighth output end, a ninth output end, a first inverted output end, a second inverted output end, a third inverted output end, a fourth inverted output end, a fifth inverted output end, a sixth inverted output end, a seventh inverted output end, an eighth inverted output end, a ninth inverted output end, a clock-controlled clock signal input end and a power clock signal input end; the local product circuit is provided with a first input end, a second input end, a third input end, a fourth input end, a fifth input end, a sixth input end, a first inverted input end, a second inverted input end, a third inverted input end, a fourth inverted input end, a fifth inverted input end, a sixth inverted input end, a clock-controlled clock signal input end, a first power clock signal input end, a second power clock signal input end, an output end and an inverted output end; the carry circuit is provided with a clock-controlled clock signal input end, a power clock signal input end, a first input end, a second input end, a third input end, a fourth input end, a fifth input end, a sixth input end, a seventh input end, a first inverted input end, a second inverted input end, a third inverted input end, a fourth inverted input end, a fifth inverted input end, a sixth inverted input end, a seventh inverted input end, an output end and an inverted output end; the first input end of the gate control circuit is a first multiplier input end of the multivalue adiabatic multiplier unit circuit and is used for accessing a first multiplier signal, the second input end of the gate control circuit is a second multiplier input end of the multivalue adiabatic multiplier unit circuit and is used for accessing a second multiplier signal, the third input end of the gate control circuit is a low-order carry signal input end of the multivalue adiabatic multiplier unit circuit and is used for accessing a low-order carry signal, the clock control clock signal input end of the gate control circuit, the clock control clock signal input end of the local product circuit and the clock control clock signal input end of the carry circuit are connected, the connection end of the clock control clock signal input end is a clock control clock signal input end of the multivalue adiabatic multiplier unit circuit, and the clock control clock signal input end of the multivalue adiabatic multiplier unit circuit is used for accessing a clock control clock signal, the power clock signal input end of the gate control circuit, the first power clock signal input end of the local product circuit and the power clock signal input end of the carry circuit are connected, the connection end of the power clock signal input end of the local product circuit is the first power clock signal input end of the multiple-valued adiabatic multiplier unit circuit, the first power clock signal input end of the multiple-valued adiabatic multiplier unit circuit is used for accessing a first power clock signal, the second power clock signal input end of the local product circuit is the second power clock signal input end of the multiple-valued adiabatic multiplier unit circuit, the second power clock signal input end of the multiple-valued adiabatic multiplier unit circuit is used for accessing a second power clock signal, the amplitude levels of the clock-controlled clock signal and the first power clock signal are the same, and the phase difference between the clock signal input end and the first power clock signal is 180 degrees, the phases of the first power clock signal and the second power clock signal are the same, and the amplitude level of the first power clock signal is 2 times of the amplitude level of the second power clock signal; the first output end of the gate control circuit is respectively connected with the first input end of the local product circuit and the first input end of the carry circuit, the second output end of the gate control circuit is respectively connected with the second input end of the local product circuit and the second input end of the carry circuit, the third output end of the gate control circuit is respectively connected with the third input end of the local product circuit and the third input end of the carry circuit, the fourth output end of the gate control circuit is respectively connected with the fourth input end of the local product circuit and the fourth input end of the carry circuit, the fifth output end of the gate control circuit is respectively connected with the fifth input end of the local product circuit and the fifth input end of the carry circuit, and the sixth output end of the gate control circuit is respectively connected with the sixth input end of the local product circuit and the sixth input end of the carry circuit, the gate control circuit has a seventh output end connected to the seventh input end of the carry circuit, a first inverted output end connected to the first inverted input end of the local product circuit and the first inverted input end of the carry circuit, a second inverted output end connected to the second inverted input end of the local product circuit and the second inverted input end of the carry circuit, a third inverted output end connected to the third inverted input end of the local product circuit and the third inverted input end of the carry circuit, a fourth inverted output end connected to the fourth inverted input end of the local product circuit and the fourth inverted input end of the carry circuit, and a fifth inverted output end connected to the fifth inverted input end of the local product circuit and the fifth inverted input end of the carry circuit The input end of the multi-valued adiabatic multiplier unit circuit is connected with the input end of the gate control circuit, the sixth inverted output end of the gate control circuit is connected with the sixth inverted input end of the local product circuit and the sixth inverted input end of the carry circuit respectively, the seventh inverted output end of the gate control circuit is connected with the seventh inverted input end of the carry circuit, the output end of the local product circuit is the local product output end of the multi-valued adiabatic multiplier unit circuit, the inverted output end of the local product circuit is the inverted local product output end of the multi-valued adiabatic multiplier unit circuit, the output end of the carry circuit is the high-order carry signal output end of the multi-valued adiabatic multiplier unit circuit, and the inverted output end of the carry circuit is the inverted high-order carry signal output end of the multi-valued adiabatic multiplier unit circuit.
2. A transmission gate structure based multiple-valued adiabatic multiplier cell circuit according to claim 1, wherein said gate control circuit comprises three gate control cells and nine binary inverters, said gate control cells having an input terminal, a clocked clock signal input terminal, a power clock signal input terminal, a first output terminal, a second output terminal, and a third output terminal, said three gate control cells being a first gate control cell, a second gate control cell, and a third gate control cell, said nine binary inverters being a first binary inverter, a second binary inverter, a third binary inverter, a fourth binary inverter, a fifth binary inverter, a sixth binary inverter, a seventh binary inverter, an eighth binary inverter, and a ninth binary inverter, respectively; the first output of first gate control unit with the input of first binary phase inverter connect and its link do gate circuit's first output, first binary phase inverter's output do gate circuit's first reverse phase output, first gate control unit's second output with second binary phase inverter's input connect and its link do gate circuit's second output, second binary phase inverter's output do gate circuit's second reverse phase output, first gate control unit's third output with third binary phase inverter's input connect and its link do gate circuit's third output, third binary phase inverter's output do gate circuit's third reverse phase output, second gate control unit's first output with fourth binary phase inverter's input connect and its link do gate circuit's third output The output end of the second binary phase inverter is the fourth inverting output end of the gate control circuit, the second output end of the second gate control unit is connected with the input end of the fifth binary phase inverter, the connection end of the second gate control unit is the fifth output end of the gate control circuit, the output end of the fifth binary phase inverter is the fifth inverting output end of the gate control circuit, the third output end of the second gate control unit is connected with the input end of the sixth binary phase inverter, the connection end of the third gate control unit is the sixth output end of the gate control circuit, the output end of the sixth binary phase inverter is the sixth inverting output end of the gate control circuit, the first output end of the third gate control unit is connected with the input end of the seventh binary phase inverter, and the connection end of the first output end of the third gate control unit is the seventh output end of the gate control circuit, the output end of the seventh binary inverter is the seventh inverted output end of the gate control circuit, the second output end of the third gate control unit is connected with the input end of the eighth binary inverter, the connection end of the second binary inverter is the eighth output end of the gate control circuit, the output end of the eighth binary inverter is the eighth inverted output end of the gate control circuit, the third output end of the third gate control unit is connected with the input end of the ninth binary inverter, the connection end of the third binary inverter is the ninth output end of the gate control circuit, the output end of the ninth binary inverter is the ninth inverted output end of the gate control circuit, the clock signal input end of the first gate control unit, the clock signal input end of the second gate control unit and the clock signal input end of the third gate control unit are connected, and the connection end of the ninth binary inverter is the clock signal input end of the gate control circuit, the power clock signal input end of the first gating unit, the power clock signal input end of the second gating unit and the power clock signal input end of the third gating unit are connected, the connection end of the power clock signal input end of the third gating unit is the power clock signal input end of the gating circuit, the input end of the first gating unit is the first input end of the gating circuit, the input end of the second gating unit is the second input end of the gating circuit, and the input end of the third gating unit is the third input end of the gating circuit.
3. The multiple-valued adiabatic multiplier unit circuit based on the transmission gate structure of claim 2, wherein the first gate control unit comprises a first PMOS transistor, a second PMOS transistor, a third PMOS transistor, a fourth PMOS transistor, a first NMOS transistor, a second NMOS transistor, a third NMOS transistor, a fourth NMOS transistor, and a two-input and gate, the two-input and gate has a first input terminal, a second input terminal, and an output terminal, the source of the first PMOS transistor is connected to the source of the second PMOS transistor, and the connection terminal thereof is the power clock signal input terminal of the first gate control unit, the source of the third PMOS transistor is connected to the source of the fourth PMOS transistor, and the connection terminal thereof is the clock signal input terminal of the first gate control unit; the gate of the first PMOS transistor, the gate of the first NMOS transistor, the gate of the third PMOS transistor and the gate of the third NMOS transistor are connected, and the connection end thereof is the input end of the first gate control unit, the drain of the first PMOS transistor, the gate of the second PMOS transistor, the drain of the first NMOS transistor and the gate of the second NMOS transistor are connected, the source of the first NMOS transistor, the source of the second NMOS transistor, the source of the third NMOS transistor and the source of the fourth NMOS transistor are all grounded, the drain of the third NMOS transistor, the gate of the fourth NMOS transistor, the drain of the third PMOS transistor and the gate of the fourth PMOS transistor are connected, the drain of the second PMOS transistor, the drain of the second NMOS transistor and the first input end of the second input and gate are connected, and the connection end thereof is the first output end of the first gate control unit, the drain electrode of the fourth PMOS tube, the drain electrode of the fourth NMOS tube and the second input end of the two-input AND gate are connected, the connection end of the two-input AND gate is the third output end of the first gate control unit, and the output end of the two-input AND gate is the second output end of the first gate control unit; the circuit structures of the second gate control unit and the third gate control unit are the same as the circuit structure of the first gate control unit.
4. The multiple-valued adiabatic multiplier circuit based on transmission gate structure of claim 3, wherein the threshold voltage of the first PMOS transistor is-0.6126V, the threshold voltage of the first NMOS transistor is-0.2457V, the threshold voltage of the third NMOS transistor is 0.243V, and the threshold voltage of the third PMOS transistor is 0.4891V.
5. The multiple-valued adiabatic multiplier unit circuit based on a transmission gate structure of any one of claims 1-4, wherein the local product circuit comprises a fifth PMOS transistor, a sixth PMOS transistor, a seventh PMOS transistor, an eighth PMOS transistor, a ninth PMOS transistor, a tenth PMOS transistor, an eleventh PMOS transistor, a twelfth PMOS transistor, a thirteenth PMOS transistor, a fourteenth PMOS transistor, a fifteenth PMOS transistor, a sixteenth PMOS transistor, a seventeenth PMOS transistor, an eighteenth PMOS transistor, a nineteenth PMOS transistor, a twentieth PMOS transistor, a fifth NMOS transistor, a sixth NMOS transistor, a seventh NMOS transistor, an eighth NMOS transistor, a ninth NMOS transistor, a tenth NMOS transistor, an eleventh NMOS transistor, a twelfth NMOS transistor, a thirteenth NMOS transistor, a fourteenth NMOS transistor, a fifteenth NMOS transistor, a sixteenth NMOS transistor, a seventeenth NMOS transistor, an eighteenth NMOS transistor, a nineteenth NMOS transistor, and a twentieth NMOS transistor; a source of the fifth PMOS transistor, a source of the sixth PMOS transistor, a drain of the fifth NMOS transistor, a drain of the sixth NMOS transistor, a source of the tenth PMOS transistor, a source of the eleventh PMOS transistor, a drain of the tenth NMOS transistor and a drain of the eleventh NMOS transistor are connected and a connection end thereof is a second power clock signal input end of the product local circuit, a source of the seventh PMOS transistor, a source of the eighth PMOS transistor, a drain of the seventh NMOS transistor, a drain of the eighth NMOS transistor, a source of the ninth PMOS transistor, a source of the sixteenth PMOS transistor, a drain of the ninth NMOS transistor, a source of the nineteenth PMOS transistor and a source of the twentieth PMOS transistor are connected and a connection end thereof is a first power clock signal input end of the product local circuit, the drain of the nineteenth NMOS transistor is connected to the drain of the twentieth NMOS transistor, and the connection end thereof is the clock signal input end of the local product circuit, the gate of the fifth NMOS transistor, the gate of the seventh PMOS transistor and the gate of the tenth NMOS transistor are connected, and the connection end thereof is the second input end of the local product circuit, the gate of the fifth PMOS transistor, the gate of the seventh NMOS transistor and the gate of the tenth PMOS transistor are connected, and the connection end thereof is the second inverting input end of the local product circuit, the gate of the sixth NMOS transistor, the gate of the eighth PMOS transistor and the gate of the eleventh NMOS transistor are connected, and the connection end thereof is the third input end of the local product circuit, the gate of the sixth PMOS transistor, the gate of the eighth NMOS transistor and the gate of the eleventh PMOS transistor are connected, and the connection end thereof is the third inverting input end of the local product circuit, a gate of the sixteenth NMOS transistor is a first input terminal of the local product circuit, a gate of the sixteenth PMOS transistor is a first inverting input terminal of the local product circuit, a gate of the ninth NMOS transistor is a fourth input terminal of the local product circuit, a gate of the ninth PMOS transistor is a fourth inverting input terminal of the local product circuit, a gate of the twelfth NMOS transistor, a gate of the fifteenth PMOS transistor and a gate of the seventeenth NMOS transistor are connected and a connection end thereof is a fifth inverting input terminal of the local product circuit, a gate of the twelfth PMOS transistor, a gate of the fifteenth NMOS transistor and a gate of the seventeenth PMOS transistor are connected and a connection end thereof is a fifth inverting input terminal of the local product circuit, a gate of the thirteenth NMOS transistor, a gate of the fourteenth PMOS transistor and a gate of the eighteenth NMOS transistor are connected and a connection end thereof is a sixth input terminal of the local product circuit, the gate of the thirteenth PMOS transistor, the gate of the fourteenth NMOS transistor and the gate of the eighteenth PMOS transistor are connected, and the connection end thereof is the sixth inverting input end of the local product circuit, the drain of the fifth PMOS transistor, the source of the fifth NMOS transistor, the source of the twelfth PMOS transistor and the drain of the twelfth NMOS transistor are connected, the drain of the sixth PMOS transistor, the source of the sixth NMOS transistor, the source of the thirteenth PMOS transistor and the drain of the thirteenth NMOS transistor are connected, the drain of the seventh PMOS transistor, the source of the seventh NMOS transistor, the source of the fourteenth PMOS transistor and the drain of the fourteenth NMOS transistor are connected, the drain of the eighth PMOS transistor, the source of the eighth NMOS transistor, the source of the fifteenth PMOS transistor and the drain of the fifteenth NMOS transistor are connected, the drain of the tenth PMOS transistor and the drain of the fourteenth NMOS are connected, The source electrode of the tenth NMOS transistor, the source electrode of the seventeenth PMOS transistor and the drain electrode of the seventeenth NMOS transistor are connected, the drain electrode of the eleventh PMOS transistor, the source electrode of the eleventh NMOS transistor, the source electrode of the eighteenth PMOS transistor and the drain electrode of the eighteenth NMOS transistor are connected, the drain electrode of the twelfth PMOS transistor, the source electrode of the twelfth NMOS transistor, the drain electrode of the thirteenth PMOS transistor, the source electrode of the thirteenth NMOS transistor, the drain electrode of the fourteenth PMOS transistor, the source electrode of the fourteenth NMOS transistor, the drain electrode of the fifteenth PMOS transistor, the source electrode of the fifteenth NMOS transistor, the drain electrode of the nineteenth PMOS transistor, the source electrode of the nineteenth NMOS transistor, the gate electrode of the twentieth PMOS transistor and the gate electrode of the twentieth NMOS transistor are connected, and the connection end thereof is the output end of the local product circuit, the drain electrode of the ninth PMOS transistor, the drain electrode of the seventeenth PMOS transistor and the drain electrode thereof are connected, The source electrode of the ninth NMOS transistor, the drain electrode of the sixteenth PMOS transistor, the source electrode of the sixteenth NMOS transistor, the drain electrode of the seventeenth PMOS transistor, the source electrode of the seventeenth NMOS transistor, the drain electrode of the eighteenth PMOS transistor, the source electrode of the eighteenth NMOS transistor, the drain electrode of the twentieth PMOS transistor, the source electrode of the twentieth NMOS transistor, the gate electrode of the nineteenth PMOS transistor and the gate electrode of the nineteenth NMOS transistor are connected, and the connecting end of the source electrode of the ninth NMOS transistor and the drain electrode of the eighteenth NMOS transistor is the inverted output end of the local product circuit.
6. The multiple-valued adiabatic multiplier unit circuit based on the transmission gate structure of any one of claims 1 to 4, wherein the carry circuit comprises a twenty-first PMOS (P-channel metal oxide semiconductor) transistor, a twenty-second PMOS (P-channel metal oxide semiconductor) transistor, a twenty-third PMOS transistor, a twenty-fourth PMOS transistor, a twenty-fifth PMOS transistor, a twenty-sixth PMOS transistor, a twenty-seventh PMOS transistor, a twenty-eighth PMOS transistor, a twenty-ninth PMOS transistor, a thirty-sixth PMOS transistor, a thirty-eleventh PMOS transistor, a thirty-second PMOS transistor, a thirty-third PMOS transistor, a thirty-fourth PMOS transistor, a thirty-fifth PMOS transistor, a thirty-sixth NMOS transistor, a twenty-seventh NMOS transistor, a twenty-eighth NMOS transistor, a twenty-ninth NMOS transistor, a thirty-eleventh NMOS transistor, a thirty-second NMOS transistor, a thirty-third NMOS transistor, a thirty-fourth NMOS transistor, a, A thirty-fifth NMOS transistor and a thirty-sixth NMOS transistor, where the source of the twenty-first PMOS transistor, the drain of the twenty-first NMOS transistor, the source of the twenty-second PMOS transistor, the drain of the twenty-second NMOS transistor, the source of the twenty-third PMOS transistor, the drain of the twenty-third NMOS transistor, the source of the twenty-fourth PMOS transistor, the drain of the twenty-fourth NMOS transistor, the source of the twenty-fifth PMOS transistor, the drain of the twenty-fifth NMOS transistor, the source of the twenty-ninth PMOS transistor, the drain of the twenty-ninth NMOS transistor, the source of the thirty-fifth PMOS transistor and the source of the thirty-sixth PMOS transistor are connected and their connection ends are the power clock signal input end of the carry circuit, the drain of the thirty-fifth NMOS transistor and the drain of the thirty-sixth NMOS transistor are connected and their connection ends are the clock signal input end of the carry circuit, the gate of the twenty-first NMOS transistor, the gate of the twenty-sixth NMOS transistor and the gate of the thirty-second NMOS transistor are connected and the connection end thereof is the third input end of the carry circuit, the gate of the twenty-first PMOS transistor, the gate of the twenty-sixth PMOS transistor and the gate of the thirty-second PMOS transistor are connected and the connection end thereof is the third inverting input end of the carry circuit, the gate of the twenty-second NMOS transistor and the gate of the twenty-third PMOS transistor are connected and the connection end thereof is the seventh input end of the carry circuit, the gate of the twenty-second PMOS transistor and the gate of the twenty-third NMOS transistor are connected and the connection end thereof is the seventh inverting input end of the carry circuit, the gate of the twenty-fourth NMOS transistor, the gate of the twenty-seventh NMOS transistor and the gate of the thirty-third NMOS transistor are connected and the connection end thereof is the second input end of the carry circuit, the gate of the twenty-fourth PMOS transistor, the gate of the twenty-seventh PMOS transistor and the gate of the thirty-third PMOS transistor are connected, and the connection end of the twenty-fifth NMOS transistor is the second inverting input end of the carry circuit, the gate of the twenty-fifth NMOS transistor is the first input end of the carry circuit, the gate of the twenty-fifth PMOS transistor is the first inverting input end of the carry circuit, the gate of the twenty-eighth NMOS transistor, the gate of the thirty-eleventh NMOS transistor and the gate of the thirty-fourth NMOS transistor are connected, and the connection end of the twenty-fourth PMOS transistor is the fifth input end of the carry circuit, the gate of the twenty-eighth PMOS transistor, the gate of the thirty-eleventh PMOS transistor and the gate of the thirty-fourth PMOS transistor are connected, and the connection end of the twenty-ninth NMOS transistor is the fifth inverting input end of the carry circuit, and the gate of the twenty-ninth NMOS transistor is the fourth input end of the carry circuit, the gate of the twenty-ninth PMOS transistor is the fourth inverting input terminal of the carry circuit, the gate of the thirty-first NMOS transistor is the sixth inverting input terminal of the carry circuit, the drain of the twenty-first PMOS transistor, the source of the twenty-first NMOS transistor, the source of the thirty-first PMOS transistor and the drain of the thirty-NMOS transistor are connected, the drain of the twenty-second PMOS transistor, the source of the twenty-second NMOS transistor, the source of the twenty-sixth PMOS transistor, the drain of the twenty-sixth NMOS transistor, the source of the twenty-seventh PMOS transistor and the drain of the twenty-seventh NMOS transistor are connected, the drain of the twenty-sixth PMOS transistor, the source of the twenty-sixth NMOS transistor, the drain of the thirty-eleventh NMOS transistor and the source of the thirty-eleventh PMOS transistor are connected, the drain of the twenty-seventh PMOS transistor, the source of the twenty-seventh NMOS transistor, the drain of the thirty-second NMOS transistor and the source of the thirty-second PMOS transistor are connected, the drain of the twenty-third PMOS transistor, the source of the twenty-third NMOS transistor, the source of the thirty-third PMOS transistor, the drain of the thirty-third NMOS transistor, the source of the twenty-eighth PMOS transistor and the drain of the twenty-eighth NMOS transistor are connected, the drain of the twenty-fourth PMOS transistor, the source of the twenty-fourth NMOS transistor, the source of the thirty-fourth PMOS transistor and the drain of the thirty-fourth NMOS transistor are connected, the drain of the thirty-PMOS transistor, the source of the thirty-NMOS transistor, the drain of the thirty-eleventh PMOS transistor, the source of the thirty-eleventh NMOS transistor, the thirty-second PMOS transistor, the source of the thirty-second NMOS transistor, the drain of the thirty-second PMOS transistor, the drain of the thirty-second NMOS transistor and the drain of the thirty-second PMOS transistor are connected, The drain electrode of the thirty-fifth PMOS tube, the source electrode of the thirty-fifth NMOS tube, the grid electrode of the thirty-sixth PMOS tube and the grid electrode of the thirty-sixth NMOS tube are connected, and the connection end of the drain electrode of the thirty-fifth PMOS tube and the grid electrode of the thirty-sixth NMOS tube is the output end of the carry circuit, the drain electrode of the twenty-fifth PMOS transistor, the source electrode of the twenty-fifth NMOS transistor, the drain electrode of the twenty-eighth PMOS transistor, the source electrode of the twenty-eighth NMOS transistor, the drain electrode of the twenty-ninth PMOS transistor, the source electrode of the twenty-ninth NMOS transistor, the drain electrode of the thirty-third PMOS transistor, the source electrode of the thirty-third NMOS transistor, the drain electrode of the thirty-fourth PMOS transistor, the source electrode of the thirty-fourth NMOS transistor, the drain electrode of the thirty-sixth PMOS transistor, the source electrode of the thirty-sixth NMOS transistor, the gate electrode of the thirty-fifth PMOS transistor, and the gate electrode of the thirty-fifth NMOS transistor are connected, and the connection end thereof is the inverted output end of the carry circuit.
7. The multiple-valued adiabatic multiplier unit circuit based on the transmission gate structure of claim 3 or 4, wherein the two-input AND gate comprises a thirty-seventh PMOS transistor, a thirty-eighth PMOS transistor, a thirty-ninth PMOS transistor, a thirty-seventh NMOS transistor, a thirty-eighth NMOS transistor and a thirty-ninth NMOS transistor, wherein the source of the thirty-seventh PMOS transistor, the source of the thirty-eighth PMOS transistor and the source of the thirty-ninth PMOS transistor are all connected to a power supply, the gate of the thirty-seventh PMOS transistor is connected to the gate of the thirty-seventh NMOS transistor and the connection end thereof is the first input end of the two-input AND gate, the gate of the thirty-eighth PMOS transistor is connected to the gate of the thirty-eighth NMOS transistor and the connection end thereof is the second input end of the two-input AND gate, the drain of the thirty-seventh PMOS transistor, the drain of the thirty-seventh NMOS transistor, the drain of the thirty-ninth PMOS transistor, and the thirty-ninth NMOS transistor, The drain of the thirty-eighth PMOS transistor, the gate of the thirty-ninth PMOS transistor and the gate of the thirty-ninth NMOS transistor are connected, the source of the thirty-seventh NMOS transistor and the drain of the thirty-eighth NMOS transistor are connected, the drain of the thirty-ninth PMOS transistor and the drain of the thirty-ninth NMOS transistor are connected, the connection end of the drain of the thirty-ninth PMOS transistor and the drain of the thirty-ninth NMOS transistor is the output end of the two-input and gate, and the source of the thirty-eighth NMOS transistor and the source of the thirty-ninth NMOS transistor are respectively grounded.
CN201710654579.7A 2017-08-03 2017-08-03 Multi-valued adiabatic multiplier unit circuit based on transmission gate structure Active CN107688453B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710654579.7A CN107688453B (en) 2017-08-03 2017-08-03 Multi-valued adiabatic multiplier unit circuit based on transmission gate structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710654579.7A CN107688453B (en) 2017-08-03 2017-08-03 Multi-valued adiabatic multiplier unit circuit based on transmission gate structure

Publications (2)

Publication Number Publication Date
CN107688453A CN107688453A (en) 2018-02-13
CN107688453B true CN107688453B (en) 2020-10-27

Family

ID=61152504

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710654579.7A Active CN107688453B (en) 2017-08-03 2017-08-03 Multi-valued adiabatic multiplier unit circuit based on transmission gate structure

Country Status (1)

Country Link
CN (1) CN107688453B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109711203B (en) * 2018-11-30 2022-11-11 宁波大学 Data selector limited by threshold voltage

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6366944B1 (en) * 1999-01-15 2002-04-02 Razak Hossain Method and apparatus for performing signed/unsigned multiplication
CN102902508A (en) * 2012-09-14 2013-01-30 宁波大学 Ternary adiabatic domino multiplication unit
CN104333374A (en) * 2014-09-29 2015-02-04 宁波大学 Low-power domino three-value reversible counter unit circuit

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007056104A1 (en) * 2007-11-15 2009-05-20 Texas Instruments Deutschland Gmbh Method and device for multiplication of binary operands

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6366944B1 (en) * 1999-01-15 2002-04-02 Razak Hossain Method and apparatus for performing signed/unsigned multiplication
CN102902508A (en) * 2012-09-14 2013-01-30 宁波大学 Ternary adiabatic domino multiplication unit
CN104333374A (en) * 2014-09-29 2015-02-04 宁波大学 Low-power domino three-value reversible counter unit circuit

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
基于谱技术的电流型CMOS乘法器;姚茂群;《浙江大学学报》;20030930;全文 *

Also Published As

Publication number Publication date
CN107688453A (en) 2018-02-13

Similar Documents

Publication Publication Date Title
Cunha et al. Quaternary look-up tables using voltage-mode CMOS logic design
US4713790A (en) Exclusive OR/NOR gate having cross-coupled transistors
CN107688453B (en) Multi-valued adiabatic multiplier unit circuit based on transmission gate structure
CN104333374B (en) Low-power domino three-value reversible counter unit circuit
Jaber et al. A Novel implementation of ternary decoder using CMOS DPL binary gates
CN107634750B (en) Multi-bit multi-valued adiabatic multiplier with transmission gate structure
Kandpal et al. Design of low power and high speed XOR/XNOR circuit using 90 nm CMOS technology
CN106100611B (en) A kind of CNFET types are bilateral along pulsed JKL trigger
CN104410404A (en) Adiabatic logic circuit and single bit full adder
CN102386908B (en) Heat insulation domino circuit and heat insulation domino ternary AND gate circuit
CN214069906U (en) Composite logic gate circuit and mining machine equipment
CN107689789B (en) Multivalued adiabatic phase inverter based on transmission gate structure
CN109546997B (en) Numerical value comparator based on TDPL logic
CN102857215B (en) Three-valued thermal-insulation domino direct circulation valve and reverse circulation valve
CN113131917B (en) High-voltage-resistant high-speed level shifter
CN102832926B (en) Low power consumption multiposition three-valued Domino adder
CN102832928B (en) Three-value adiabatic domino addition unit
Yemiscioglu et al. 16-bit clocked adiabatic logic (CAL) logarithmic signal processor
CN102891667B (en) Multi-order ternary double-track domino comparator
CN103095288A (en) Ultra-low power consumption three-valued counting unit and multi-bit counter based on Domino circuit
CN101968733A (en) Mixed-value based eight-value heat-insulation addition and subtraction counter
CN102891677B (en) Multidigit three-valued low power consumption domino multiplying unit
CN102891668A (en) Ternary low-power-consumption domino comparison unit
CN110995238B (en) Full adder based on swing recovery transmission pipe logic
CN213342181U (en) TSG reversible logic gate circuit applied to reversible logic circuit

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant