CN107686359A - A kind of Si3N4Application of/BAS the ceramic complex phase materials as high temperature microwave metallurgical material - Google Patents
A kind of Si3N4Application of/BAS the ceramic complex phase materials as high temperature microwave metallurgical material Download PDFInfo
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- CN107686359A CN107686359A CN201610626788.6A CN201610626788A CN107686359A CN 107686359 A CN107686359 A CN 107686359A CN 201610626788 A CN201610626788 A CN 201610626788A CN 107686359 A CN107686359 A CN 107686359A
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- 239000000463 material Substances 0.000 title claims abstract description 56
- 239000000919 ceramic Substances 0.000 title claims abstract description 34
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 54
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 44
- 239000000843 powder Substances 0.000 claims abstract description 40
- 239000012071 phase Substances 0.000 claims abstract description 31
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 claims abstract description 20
- CSSYLTMKCUORDA-UHFFFAOYSA-N barium(2+);oxygen(2-) Chemical compound [O-2].[Ba+2] CSSYLTMKCUORDA-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000002002 slurry Substances 0.000 claims abstract description 19
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 17
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000011268 mixed slurry Substances 0.000 claims abstract description 14
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 12
- 239000007791 liquid phase Substances 0.000 claims abstract description 10
- 238000005245 sintering Methods 0.000 claims abstract description 9
- 239000007790 solid phase Substances 0.000 claims abstract description 6
- 238000007872 degassing Methods 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 5
- 238000007711 solidification Methods 0.000 claims description 4
- 230000008023 solidification Effects 0.000 claims description 4
- 238000000498 ball milling Methods 0.000 claims description 2
- 238000000465 moulding Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 230000008014 freezing Effects 0.000 claims 1
- 238000007710 freezing Methods 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 abstract description 9
- 239000005543 nano-size silicon particle Substances 0.000 abstract description 3
- 239000012780 transparent material Substances 0.000 description 11
- 229910010293 ceramic material Inorganic materials 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 238000010792 warming Methods 0.000 description 6
- 239000002131 composite material Substances 0.000 description 5
- 239000002270 dispersing agent Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 238000005452 bending Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- -1 tetramethyl hydroxide Ammonium Chemical compound 0.000 description 3
- 229910018125 Al-Si Inorganic materials 0.000 description 2
- 229910018520 Al—Si Inorganic materials 0.000 description 2
- 238000003723 Smelting Methods 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- 150000003016 phosphoric acids Chemical class 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/584—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
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- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
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- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
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Abstract
The present invention proposes a kind of Si3N4Application of/BAS the ceramic complex phase materials as high temperature microwave metallurgical material, the liquid phase for preparing slurry is used as using Ludox, add silicon nitride powder, barium monoxide powder and alumina powder, the wherein addition of barium monoxide, aluminum oxide is on the basis of the quality of silica in Ludox, according to stoichiometric proportion BaO A12O3‑2SiO2Slurry is prepared in addition, and silicon nitride powder quality accounts for 60%~75% of solid phase gross mass in mixed slurry, and barium monoxide, the aluminum oxide of addition absorb generation BAS in the nano silicon sintering process in Ludox and obtain the Si as high temperature microwave metallurgical material3N4/ BAS ceramic complex phase materials.The present invention is to Si3N4/ BAS ceramic complex phase materials have excavated new application field, realize Si3N4Application of/BAS the ceramic complex phase materials in microwave metallurgical field.
Description
Technical field
The present invention relates to a kind of Si3N4Application of/BAS the ceramic complex phase materials as high temperature microwave metallurgical material, belongs to high temperature
Microwave metallurgical field of material technology.
Background technology
In recent years, microwave is widely used, and is fully demonstrated in ore dressing, material preparation, metallurgical technology etc.
The advantages of microwave heating is different from conventional heating and its advantage of green metallurgical.It is steady to develop dielectric properties and physical and chemical performance under high temperature
The fixed, electromagnetic wave transparent material of good mechanical properties is the developing key issue of microwave metallurgical, and Microwave-Transparent Materials are in microwave smelting
It is used to ensure microwave metallurgical reaction safety as reactant supporting body during gold, normally, efficiently carries out, is to realize microwave metallurgical
The indispensable pith of technique.Electromagnetic wave transparent material main performance requirements for microwave metallurgical are：(1) in Microwave Industry frequency
During 0.915GHz and 2.45GHz, dielectric constant is less than 10, and dielectric loss factor is less than 0.1, and dielectric properties changing with temperature
Change does not produce obvious change；(2) high temperature materialization stable performance, avoid reacting with microwave heating material；(3) thermal shock performance
Well, thermal coefficient of expansion is low, resistance to rapid heat cycle；(4) electromagnetic wave transparent material used in microwave rotary kiln equipment will also meet higher
Bending strength and fracture toughness.
At present, less, its supporting body material as microwave metallurgical reaction mass is reported to the special electromagnetic wave transparent material of microwave metallurgical
Material, has bottleneck effect to extensive use of the microwave heating technique in metallurgical industry field.At present, electromagnetic wave transparent material mainly has phosphoric acid
Salt system, Nitride systems and oxide system, but fail to fully meet for the particularity of microwave heating, these electromagnetic wave transparent materials
The requirement of microwave metallurgical.
As dielectric loss is less than 10 under high-temperature resistant aluminium oxide electromagnetic wave transparent material normal temperature-2, when temperature is 1050 DEG C, dielectric loss increases
Add as 0.1378, it is impossible to meet the metallurgical wave transparent requirement of high temperature microwave.Quartz glass has excellent dielectric properties and heat-resisting punching
Performance is hit, maximum operation (service) temperature is 1100 DEG C, and 1000 DEG C of dielectric constants are less than 4, and loss tangent 0.001, shortcoming is curved
Qu Qiangdu relatively low (≤50MPa).The dielectric of the ceramic wave-transmitting material for the Mg-Al-Si systems that patent 200710066041.0 is developed
Constant is higher (10 or so), is unsatisfactory for wave transmission rate demand.The pottery for the Mg-Al-Si systems developed in patent 200910095114.8
Porcelain electromagnetic wave transparent material has relatively low dielectric constant (3~5) in higher temperature, but 1250 DEG C of its bending strengths only have 20MPa.
Si3N4It is a kind of structural ceramic material of high comprehensive performance, is mainly used in the research of antenna house electromagnetic wave transparent material, in height
All there is good mechanical property and wave transparent performance under gentle normal temperature, while also there is good heat endurance, high erosion resistance
The performances such as property, thermal coefficient of expansion be small.But Si3N4Preparation usually require add low melting point sintering aid, burnt by mass transfer in liquid phase
Knot is fine and close, although the liquid phase generated in sintering can promote densifying materials, the liquid phase turns into crystal boundary glass in cooling procedure
Mutually it is retained, grain boundary glassy phase softens at high temperature, slides and result in Si3N4Ceramic material is strong when temperature is higher than 800 DEG C
Spend exponential decline.
Patent《One kind prepares Si3N4The method of/BAS composite ceramic materials》(publication number：CN104496484A) provide with silicon
Colloidal sol adds the addition of silicon nitride powder, barium monoxide powder, wherein alumina powder, barium monoxide, aluminum oxide as the liquid phase for preparing slurry
Amount is on the basis of the quality of silica in Ludox, according to stoichiometric proportion BaO-A12O3-2SiO2Slurry is prepared in addition, is added
Barium monoxide, the aluminum oxide added absorbs the Si that generation BAS in the nano silicon sintering process in Ludox prepares self toughening3N4/
BAS composite ceramic materials.Silica in invention BAS is nanoscale, and reactivity is high, and BAS is easily generated, the BAS of generation
In Si3N4It is evenly distributed in/BAS composites, makes Si3N4/ BAS composite ceramic materials have excellent room temperature and high-temperature mechanics
Performance.
The content of the invention
It is an object of the invention to overcome prior art insufficient, there is provided a kind of Si3N4/ BAS ceramic complex phase materials are as high temperature
The application of microwave metallurgical material.
The technical solution of the present invention：A kind of Si of following proportioning3N4/ BAS ceramic complex phase materials are as high temperature microwave smelting
The application of golden material,
Si3N4Mass content is 60%~75%, and remaining is BAS.
Si3N4It is 70 with BAS mass ratioes：When 30, Si3N4The properties of/BAS ceramic complex phase materials are optimal.
Si as the application of high temperature microwave metallurgical material3N4/ BAS ceramic complex phase materials, preparation method are real by following steps
It is existing：
The first step, mixed slurry is prepared,
Using Ludox as liquid phase, silicon nitride powder, barium monoxide powder and alumina powder are added, barium monoxide powder and alumina powder add
For dosage on the basis of the quality of the silica in Ludox, the stoichiometric proportion of three is BaO-A12O3-2SiO2, silicon nitride
Silty amount accounts for 60%~75% of solid phase gross mass in mixed slurry, and solid phase gross mass refers to silicon nitride powder, oxidation in mixed slurry
The gross mass of silica in barium powder, alumina powder and Ludox；
Using Ludox as liquid phase, Ludox not only solidifies pulp gel at low temperature, avoids existing ceramic material system
The defects of complex steps such as drying, dumping are difficult to effectively control ceramic material defect, environmental pollution during standby, and colloidal sol-
Time-consuming (it is generally necessary to several days or a few weeks), molded samples need to rise in time for colloidal sol conversion gel process in gel method preparation process
Temperature is dried, the easy contraction distortion of sample and cracking problem in the drying process that heats up；While the silica in Ludox is again
Be BAS generation raw material, by the way that silica in Ludox is converted into BAS, avoid introduced in final ceramic it is resistance to
The silica of warm poor-performing, and can also make BAS and Si3N4Between mutually promoted in sintering process.
In order that powder is preferably dispersed in colloidal sol, a small amount of dispersant can be added in mixed slurry, dispersant makes
Ammonium polyacrylate or TMAH can be used, can also use other species being had no adverse effect to end article to disperse
Agent, addition are 0.5~3% of solid part gross mass in mixed slurry.
Second step, mixed slurry ball milling, obtain well mixed slurry；
3rd step, low temperature gel solidification,
Make the abundant curing molding of slurry at low temperature after slurry degassing, obtain base substrate, temperature≤- 40 DEG C of gel solidification；
4th step, body drying, sintering, obtain Si3N4/ BAS ceramic complex phase materials.
Si of the present invention3N4The performance of/BAS ceramic complex phase materials：Dielectric constant is less than 9 (20 DEG C~1500 DEG C), dielectric loss
Less than 0.02 (20 DEG C~1500 DEG C), bending strength is that fracture toughness is not less than 300MPa (25 DEG C), 200MPa (1350 DEG C)
Less than 5MPam1/2, the material bending strength retention rate ＞ 50% after 2 thermal shocks, the thermal coefficient of expansion of the material for 2.0~
3.5×10-6/ DEG C (20~1250 DEG C), performance complies fully with the performance requirement of microwave metallurgical wave-transmitting material.
The beneficial effect of the present invention compared with prior art：
(1) present invention is to Si3N4/ BAS ceramic complex phase materials have excavated new application field, realize Si3N4/ BAS ceramics
Application of the composite diphase material in microwave metallurgical field；
(2) Si of the present invention3N4/ BAS ceramic complex phase materials can not only meet items of the microwave metallurgical technology to electromagnetic wave transparent material
It can require, and there is excellent room temperature and mechanical behavior under high temperature；
(3) Si of the present invention as microwave metallurgical wave-transmitting material3N4/ BAS ceramic complex phase material preparation technologies are simple, production
Cycle is shorter, and finished product rate is high, and intensity is high after shaping, and uniformity is good；
(4) Si of the present invention as microwave metallurgical wave-transmitting material3N4It need not add in/BAS ceramic complex phase material technical process
Add any organic substance, it is not necessary to dumping, environment will not be polluted.
Embodiment
The present invention is described in detail below in conjunction with instantiation.
The present invention adds silicon nitride powder, barium monoxide powder and alumina powder using Ludox as the liquid phase for preparing slurry, wherein
Barium monoxide, the addition of aluminum oxide are on the basis of the quality of silica in Ludox, according to stoichiometric proportion BaO-A12O3-
2SiO2Slurry is prepared in addition, and silicon nitride powder quality accounts for 60%~75% of solid phase gross mass in mixed slurry, the oxidation of addition
Barium, aluminum oxide absorb generation BAS in the nano silicon sintering process in Ludox and obtain Si3N4/ BAS ceramic complex phase materials.
Embodiment 1
Slurry is formed by Ludox, silicon nitride powder, barium monoxide powder and alumina powder, and adds 1% tetramethyl hydroxide
Ammonium is as dispersant, and wherein the addition of barium monoxide, aluminum oxide is on the basis of the quality of silica in Ludox, according to BaO-
A12O3-2SiO2Stoichiometric proportion adds, and silicon nitride powder and BAS mass ratio are 65:35；Ball mill mixing 5h in high speed ball mill,
Mould is injected after slurry degassing, being then incubated 20 minutes in liquid nitrogen makes slurry fully solidify, be stripped, after the freeze forming demoulding
Sample is warming up to 80 DEG C and being incubated makes sample thoroughly dry；Dried sample in nitrogen atmosphere (normal pressure) with 5 DEG C/min's
Speed is warming up to 1780 DEG C and is sintered, and is incubated 3h, obtains Si3N4/ BAS ceramic complex phase materials.Si manufactured in the present embodiment3N4/
BAS ceramic complex phase material properties are shown in Table 1.
Embodiment 2
Slurry is formed by Ludox, silicon nitride powder, barium monoxide powder and alumina powder, and adds 1% tetramethyl hydroxide
Ammonium is as dispersant, and wherein the addition of barium monoxide, aluminum oxide is on the basis of the quality of silica in Ludox, according to BaO-
A12O3-2SiO2Stoichiometric proportion adds, and silicon nitride powder and BAS mass ratio are 70:30；Ball mill mixing 5h in high speed ball mill,
Mould is injected after slurry degassing, being then incubated 20 minutes in liquid nitrogen makes slurry fully solidify, be stripped, after the freeze forming demoulding
Sample is warming up to 80 DEG C and being incubated makes sample thoroughly dry；Dried sample in nitrogen atmosphere (normal pressure) with 5 DEG C/min's
Speed is warming up to 1780 DEG C and is sintered, and is incubated 3h, obtains Si3N4/ BAS ceramic complex phase materials.Si manufactured in the present embodiment3N4/
BAS ceramic complex phase material properties are shown in Table 1.
Embodiment 3
Slurry is formed by Ludox, silicon nitride powder, barium monoxide powder and alumina powder, and adds 1% tetramethyl hydroxide
Ammonium is as dispersant, and wherein the addition of barium monoxide, aluminum oxide is on the basis of the quality of silica in Ludox, according to BaO-
A12O3-2SiO2Stoichiometric proportion adds, and silicon nitride powder and BAS mass ratio are 75:25；Ball mill mixing 5h in high speed ball mill,
Mould is injected after slurry degassing, being then incubated 20 minutes in liquid nitrogen makes slurry fully solidify, be stripped, after the freeze forming demoulding
Sample is warming up to 80 DEG C and being incubated makes sample thoroughly dry；Dried sample in nitrogen atmosphere (normal pressure) with 5 DEG C/min's
Speed is warming up to 1780 DEG C and is sintered, and is incubated 3h, obtains Si3N4/ BAS ceramic complex phase materials.Si manufactured in the present embodiment3N4/
BAS ceramic complex phase material properties are shown in Table 1.
Table 1
Unspecified part of the present invention is known to the skilled person technology.
Claims (4)
- A kind of 1. Si of following proportioning3N4Application of/BAS the ceramic complex phase materials as high temperature microwave metallurgical material, Si3N4Quality contains Measure as 60%~75%, remaining is BAS.
- A kind of 2. Si according to claim 13N4Application of/BAS the ceramic complex phase materials as high temperature microwave metallurgical material, It is characterized in that：Described Si3N4/ BAS ceramic complex phase materials using Ludox as liquid phase, using colloidal sol, freezing gel, drying and Sintering process is prepared.
- A kind of 3. Si according to claim 23N4Application of/BAS the ceramic complex phase materials as high temperature microwave metallurgical material, It is characterized in that：Described Si3N4/ BAS ceramic complex phase materials are prepared by following steps,The first step, mixed slurry is prepared,Using Ludox as liquid phase, the addition of silicon nitride powder, barium monoxide powder and alumina powder, barium monoxide powder and alumina powder is added On the basis of the quality of the silica in Ludox, the stoichiometric proportion of three is BaO-A12O3-2SiO2, silicon nitride silty Amount accounts for 60%~75% of solid phase gross mass in mixed slurry, in mixed slurry solid phase gross mass refer to silicon nitride powder, barium monoxide powder, The gross mass of silica in alumina powder and Ludox；Second step, mixed slurry ball milling, obtain well mixed slurry；3rd step, low temperature gel solidification,Make the abundant curing molding of slurry at low temperature after slurry degassing, obtain base substrate, temperature≤- 40 DEG C of gel solidification；4th step, body drying, sintering, obtain Si3N4/ BAS ceramic complex phase materials.
- A kind of 4. Si of following proportioning3N4Application of/BAS the ceramic complex phase materials as high temperature microwave metallurgical material, Si3N4With BAS Mass ratio is 70：30.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001316174A (en) * | 2000-02-21 | 2001-11-13 | Ngk Insulators Ltd | Composite material and its manufacturing method |
| CN104496484A (en) * | 2014-12-02 | 2015-04-08 | 航天特种材料及工艺技术研究所 | Method for preparing Si3N4/BAS composite ceramic material |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001316174A (en) * | 2000-02-21 | 2001-11-13 | Ngk Insulators Ltd | Composite material and its manufacturing method |
| CN104496484A (en) * | 2014-12-02 | 2015-04-08 | 航天特种材料及工艺技术研究所 | Method for preparing Si3N4/BAS composite ceramic material |
Non-Patent Citations (1)
| Title |
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| 支晓洁 等: "透波材料在微波冶金领域的应用进展", 《化工科技》 * |
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