CN107665865A - A kind of cadmium-zinc-teiluride base HgCdTe infrared focal plane device composite construction and preparation method - Google Patents
A kind of cadmium-zinc-teiluride base HgCdTe infrared focal plane device composite construction and preparation method Download PDFInfo
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- CN107665865A CN107665865A CN201710760261.7A CN201710760261A CN107665865A CN 107665865 A CN107665865 A CN 107665865A CN 201710760261 A CN201710760261 A CN 201710760261A CN 107665865 A CN107665865 A CN 107665865A
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- jewel
- cadmium
- zinc
- teiluride
- reading circuit
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- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 title claims abstract description 60
- 238000010276 construction Methods 0.000 title claims abstract description 27
- 239000002131 composite material Substances 0.000 title claims abstract description 26
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 239000010437 gem Substances 0.000 claims abstract description 51
- 229910001751 gemstone Inorganic materials 0.000 claims abstract description 51
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 claims abstract description 38
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 33
- 239000010703 silicon Substances 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000004814 polyurethane Substances 0.000 claims abstract description 15
- 229920002635 polyurethane Polymers 0.000 claims abstract description 15
- 239000003822 epoxy resin Substances 0.000 claims abstract description 13
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 7
- 229910052738 indium Inorganic materials 0.000 claims description 10
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 10
- 239000004593 Epoxy Substances 0.000 claims description 4
- 230000035882 stress Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- -1 mercury cadmium tellurides Chemical class 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910001374 Invar Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- DGJPPCSCQOIWCP-UHFFFAOYSA-N cadmium mercury Chemical compound [Cd].[Hg] DGJPPCSCQOIWCP-UHFFFAOYSA-N 0.000 description 1
- CEKJAYFBQARQNG-UHFFFAOYSA-N cadmium zinc Chemical compound [Zn].[Cd] CEKJAYFBQARQNG-UHFFFAOYSA-N 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000012010 growth Effects 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/562—Protection against mechanical damage
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of cadmium-zinc-teiluride base HgCdTe infrared focal plane device composite construction and preparation method.Composite construction in the present invention includes cadmium-zinc-teiluride substrate, the infrared photosensor chip of mercury cadmium telluride, silicon reading circuit, jewel electrode base board and jewel deformation balance layer.The present invention obtains cadmium-zinc-teiluride base mercury-cadmium-tellurium focal plane module using customary preparation methods, then one layer of polyurethane modified epoxy resin is applied at the silicon reading circuit back side of module, paste last layer jewel deformation balance layer, wherein jewel deformation balance layer thickness is consistent with jewel electrode base board, and size is consistent with silicon reading circuit size；Then apply the power of 4~5 newton on jewel deformation balance layer, solidify 168~192 hours at 22~28 DEG C.The composite construction prepared using the method in the present invention effectively reduces the thermal mismatch stress that indirect inverse bonding interconnection cadmium-zinc-teiluride base HgCdTe infrared focal plane device works at low temperature, reduce because mercury cadmium telluride chip caused by thermal mismatching deforms, improve the Low-Temperature Reliability of device.
Description
Technical field
The present invention relates to HgCdTe infrared focal plane device, in particular to a kind of scale with high reliability in 256x1
And the cadmium-zinc-teiluride base HgCdTe infrared focal plane device composite construction of inverse bonding alluded to above.
Background technology
Infrared detection technique earth observation from space, missile homing, precise guidance, industry and medical thermography etc. it is military and
Civil area has important application.With requirement more and more higher of the application to infrared detection technique, as IRDS
In core component, high-performance, the infrared focal plane detector of high reliability be development trend and target.
HgCdTe infrared focal plane detector is most important developing direction in current infrared detector, infrared Jiao of mercury cadmium telluride
Planar detector includes the infrared photosensor chip of mercury cadmium telluride, silicon reading circuit and electrode base board, the wherein infrared photosensor chip of mercury cadmium telluride
It is the extension mercury cadmium telluride thin film on substrate, mercury cadmium telluride photosensor chip is prepared using semiconductor technology.The lining of extension mercury cadmium telluride thin film
There are cadmium-zinc-teiluride, GaAs and silicon etc. in bottom, is cadmium-zinc-teiluride substrate with mercury cadmium telluride Lattice Matching, particularly infrared to long wave mercury cadmium telluride
For detector, compared to the mercury cadmium telluride thin film quality of materials of other replacement substrate growths, the mercury cadmium telluride of extension on cadmium-zinc-teiluride substrate
Film quality is optimal.
Long wavelength's Linear FPA device obtains infrared image by pushing away the mode of sweeping, long line array device by 256x1 and more than
The focal plane module of scale is spliced, 256x1 focal planes module typically using indirect inverse bonding interconnection mode realize photosensitive member and
Reading circuit is electrically connected, that is, grown indium post salient point mercury cadmium telluride chip and silicon reading circuit inverse bonding grown indium respectively
On the jewel electrode base board of post.Cadmium-zinc-teiluride base mercury cadmium telluride is grown in 400~500 degree of high temperature, and device is prepared in room temperature extremely
65 degree, device is operated in about 80K low temperature, due to silicon, jewel piece, cadmium-zinc-teiluride, mercury cadmium telluride and polyurethane modified epoxy resin this
The thermal coefficient of expansion of different materials is different, and it is larger that huge thermal mismatching can cause mercury-cadmium-tellurium focal plane device to bear at low temperature
Thermal mismatch stress, cause the failure of device.The face battle array focal plane device interconnected using direct inverse bonding can be by changing substrate material
Material, substrate thickness and increase invar or kovar in laminated construction to reduce the stress of mercury cadmium telluride (" silicon substrate HgCdTe faces battle array
Focal plane device structure thermal stress is analyzed ", laser is with infrared, 2006,11 (6)；" HgCdTe infrared focal plane device thermal mismatching should
Power research ", infrared and millimeter wave journal, 2008,27 (6)；" thermal-stress analysis of infrared focal plane detector encapsulating structure ", laser
With infrared, 2014,44 (6)).Because the intensity of Cdl-x_Znx_Te will be small than the intensity of other replacement substrates, even if smaller rule
The cadmium-zinc-teiluride base mercury-cadmium tellurid detector of mould is also due to thermal mismatch stress causes to fail, the cadmium-zinc-teiluride base focal plane device of indirect inverse bonding
Part structure and direct inverse bonding device architecture are different, can not solve the integrity problem of low-temperature working using above method, it is necessary to
Find other solutions.
The content of the invention
The purpose of the present invention is to propose to one kind to be used for cadmium-zinc-teiluride base HgCdTe infrared focal plane device composite construction and preparation
Method, the alignment cadmium-zinc-teiluride base HgCdTe infrared focal plane device that the composite construction can improve indirect inverse bonding work at low temperature
Reliability.
A kind of cadmium-zinc-teiluride base HgCdTe infrared focal plane device composite construction and preparation method in the present invention, wherein described
Composite construction include cadmium-zinc-teiluride substrate 1, the infrared photosensitive element chip 2 of mercury cadmium telluride, silicon reading circuit 6, jewel electrode base board 4 and treasured
Stone deformation balance layer 8.The infrared photosensor chip 2 of mercury cadmium telluride being grown on cadmium-zinc-teiluride substrate 1 passes through indium post 3 with silicon reading circuit 6
On jewel electrode base board 4, one layer of jewel is fixed in the back side of silicon reading circuit 6 by polyurethane modified epoxy resin 7 for inverse bonding respectively
Piece is as jewel deformation balance layer 8, and the thickness of jewel deformation balance layer 8 is consistent with jewel electrode base board 4, jewel deformation balance layer 8
Size is consistent with the size of silicon reading circuit 6.
The heretofore described method for preparing composite construction, including following preparation process：
1) it is infrared photosensitive that the mercury cadmium telluride being grown on cadmium-zinc-teiluride substrate (1) is prepared with the focal plane device preparation method of routine
Chip (2), silicon reading circuit (6) and jewel electrode base board (4)；
2) the infrared photosensor chip of cadmium-zinc-teiluride base mercury cadmium telluride (2) and silicon reading circuit (6) are passed through into indium post (3) inverse bonding respectively again
On jewel electrode base board (4), and filled polyurethane modified epoxy (5) in inverse bonding gap；
3) one layer of polyurethane modified epoxy resin (7) and then at silicon reading circuit (6) back side is applied, pastes last layer jewel shape
Become balance layer (8), jewel deformation balance layer (8) thickness and jewel electrode base board (4) unanimously, size and silicon reading circuit (6) chi
It is very little consistent；Apply the power of 4~5 newton on jewel deformation balance layer (8)；
4) solidify 168~192 hours at 22~28 DEG C.
It is an advantage of the invention that：
1. the present invention is suitable for the cadmium-zinc-teiluride base HgCdTe infrared focal plane device of indirect inverse bonding interconnection, fallen indirectly conventional
The jewel piece of one layer of size particular design of increase and polyurethane modified epoxy resin can carry as deformation balance layer on welding structure
High/low temperature reliability, preparation method is easy easily to be implemented.
2. composite construction provided by the present invention and preparation method are gathered by using the method for increase jewel piece by controlling
The thickness of urethane modified epoxy and the dimensional thickness of jewel piece, cadmium-zinc-teiluride base HgCdTe infrared focal plane device can be reduced
The thermal mismatch stress to work at low temperature, reduce because mercury cadmium telluride chip caused by thermal mismatching deforms, improve the reliability of device.
3. composite construction provided by the present invention and preparation method can also be used for the indirect inverse bonding tellurium cadmium that other substitute substrate
Mercury infrared focal plane device, to improve its Low-Temperature Reliability.
Brief description of the drawings
Fig. 1 is cadmium-zinc-teiluride base HgCdTe infrared focal plane device composite construction schematic diagram
Wherein 1 is cadmium-zinc-teiluride substrate；2 be the infrared photosensor chip of mercury cadmium telluride；3 be indium post；4 be jewel electrode base board；5 and 7
It is polyurethane modified epoxy resin；6 be silicon reading circuit；8 be jewel deformation balance layer.
Fig. 2 is the deformation map of the mercury cadmium telluride chip of cadmium-zinc-teiluride base in composite construction.10 be the inflection curves under low temperature, and 9 are
Inflection curves at room temperature.
Fig. 3 is the cadmium-zinc-teiluride base mercury cadmium telluride core of the cadmium-zinc-teiluride base HgCdTe infrared focal plane device of conventional indirect inverse bonding interconnection
The deformation map of piece.11 be inflection curves at room temperature, and 12 be the inflection curves under low temperature.
Embodiment
Below in conjunction with the accompanying drawings, the cadmium-zinc-teiluride base HgCdTe infrared focal plane device using photosensitive element array as 256x1 is example
Embodiments of the present invention are elaborated：
Described cadmium-zinc-teiluride base HgCdTe infrared focal plane device composite construction in the present invention, including the life with indium post 3
Grow the infrared photosensor chip 2 of 256x1 mercury cadmium tellurides on cadmium-zinc-teiluride substrate 1, the infrared photosensor chip 2 of mercury cadmium telluride and silicon reading circuit 6
It is interconnected respectively with the jewel electrode base board 4 with indium post 3 using indirect inverse bonding interconnection technique, by jewel deformation balance layer
8 are attached on silicon reading circuit 6 by one layer of polyurethane modified epoxy resin 7, obtain cadmium-zinc-teiluride base HgCdTe infrared focal plane
Device composite construction.The thickness of jewel deformation balance layer 8 is consistent with jewel electrode base board 4, is 0.33 millimeter；Jewel deformation balances
The size of layer 8 is consistent with the size of silicon reading circuit 6, a length of 8.7 millimeters, a width of 3.7 millimeters.
The preparation method of cadmium-zinc-teiluride base HgCdTe infrared focal plane device composite construction in the present invention is：Using routine
The infrared photosensitive core of 256 × 1 mercury cadmium tellurides for being grown in cadmium-zinc-teiluride substrate 1 with indium post 3 prepared by focal plane device preparation method
(size is 9.3 × 6.5 for piece 2,256 × 1 silicon reading circuits 6 (size is 8.7 × 3.7 × 0.5 millimeter) and jewel electrode base board 4
× 0.33 millimeter)；The infrared photosensor chip 2 of mercury cadmium telluride and silicon reading circuit 6 are distinguished into inverse bonding in jewel electrode base by indium post 3 again
On plate 4, the filled polyurethane modified epoxy 5 in inverse bonding gap；Then one layer of poly- ammonia is applied at the back side of silicon reading circuit 6
Ester modified epoxy resin 7, the jewel deformation balance layer 8 of 8.7 × 3.7 × 0.33 millimeter of last layer is pasted, in jewel deformation balance layer 8
The upper power for applying about 5 newton is to control the thickness of polyurethane modified epoxy resin 7；The cadmium-zinc-teiluride base mercury cadmium telluride of composite construction is red
Outer focal plane device solidifies 168~192 hours at a temperature of being placed on 22~28 DEG C.Composite construction is in preparation process, in order to have
Effect reduce due to each layer thermal coefficient of expansion formed thermal mismatch stress and caused by cadmium-zinc-teiluride base mercury cadmium telluride chip failure, it is necessary to it is right
The thickness for being coated in the polyurethane modified epoxy resin 7 at the silicon reading circuit back side is controlled, while jewel deformation must also be balanced
The physical dimension of layer 8 is controlled.The thickness of polyurethane modified epoxy resin 7 is consistent with inverse bonding gap width, and generally 5~10
Micron；The size of jewel deformation balance layer 8 is 8.7 × 3.7 × 0.33 millimeter, and length and width are consistent with silicon reading circuit 6, thickness and treasured
Stone electrode base board 4 is consistent.The composite construction obtained using method made above can effectively contain that detector works at low temperature
When due to the deformation of cadmium-zinc-teiluride base mercury cadmium telluride chip caused by thermal mismatching, so as to avoid detector failure.Fig. 2 is this example reality
The inflection curves for the cadmium-zinc-teiluride base mercury cadmium telluride chip that testing measures, 9 and 10 be respectively room temperature and low temperature about 80K deformation song
Line.Fig. 3 is the cadmium-zinc-teiluride base mercury cadmium telluride chip of the cadmium-zinc-teiluride base HgCdTe infrared focal plane device of conventional indirect inverse bonding interconnection
Deformation map, curve 11 and 12 are respectively room temperature and low temperature about 80K inflection curves.It can be seen that tellurium in composite construction
The deformation of zinc cadmium base mercury cadmium telluride chip at low temperature is obviously reduced.Cycle-index of the composite construction between room temperature and liquid nitrogen temperature
100 times can be brought up to and retention property is constant.
The result of the present invention has been successfully applied to the long wave cadmium-zinc-teiluride base HgCdTe infrared focal plane device such as 256x1,400x1
Part, it is burnt flat that the long alignment LONG WAVE INFRARED obtained is spliced by the 256x1 cadmium-zinc-teiluride base HgCdTe infrared focal planes device of composite construction
Surface detector has been successfully applied to remote sensing satellite in orbit.
Claims (2)
1. a kind of cadmium-zinc-teiluride base HgCdTe infrared focal plane device composite construction, including cadmium-zinc-teiluride substrate (1), mercury cadmium telluride infrared light
Quick chip (2), silicon reading circuit (6), jewel electrode base board (4) and jewel deformation balance layer (8), it is characterised in that：
The infrared photosensor chip of mercury cadmium telluride (2) on cadmium-zinc-teiluride substrate (1) is grown in silicon reading circuit (6) difference inverse bonding in jewel
On electrode base board (4), it is jewel that one layer of jewel piece is fixed in silicon reading circuit (6) back side by polyurethane modified epoxy resin (7)
Deformation balance layer (8), jewel deformation balance layer (8) thickness and jewel electrode base board (4) unanimously, jewel deformation balance layer (8) chi
It is very little consistent with silicon reading circuit (6) size.
2. a kind of prepare a kind of side of cadmium-zinc-teiluride base HgCdTe infrared focal plane device composite construction as claimed in claim 1
Method, it is characterised in that including following preparation process：
1) the infrared photosensor chip of mercury cadmium telluride being grown on cadmium-zinc-teiluride substrate (1) is prepared with the focal plane device preparation method of routine
(2), silicon reading circuit (6) and jewel electrode base board (4)；
2) by the infrared photosensor chip of the mercury cadmium telluride of cadmium-zinc-teiluride base (2) and silicon reading circuit (6), by indium post (3), inverse bonding exists respectively again
On jewel electrode base board (4), and filled polyurethane modified epoxy (5) in inverse bonding gap；
3) one layer of polyurethane modified epoxy resin (7) and then at silicon reading circuit (6) back side is applied, patch last layer jewel deformation is put down
Weigh layer (8), jewel deformation balance layer (8) thickness and jewel electrode base board (4) unanimously, size and silicon reading circuit (6) size one
Cause；Apply the power of 4~5 newton on jewel deformation balance layer (8)；
4) solidify 168~192 hours at 22~28 DEG C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710760261.7A CN107665865A (en) | 2017-08-30 | 2017-08-30 | A kind of cadmium-zinc-teiluride base HgCdTe infrared focal plane device composite construction and preparation method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710760261.7A CN107665865A (en) | 2017-08-30 | 2017-08-30 | A kind of cadmium-zinc-teiluride base HgCdTe infrared focal plane device composite construction and preparation method |
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| CN107665865A true CN107665865A (en) | 2018-02-06 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0829907A1 (en) * | 1996-09-16 | 1998-03-18 | Rockwell International Corporation | Hybrid focal plane array comprising stabilizing structure |
| US20020024110A1 (en) * | 2000-04-28 | 2002-02-28 | Satoshi Iwatsu | Semiconductor device using bumps, method for fabricating same, and method for forming bumps |
| CN2511954Y (en) * | 2001-12-29 | 2002-09-18 | 中国科学院上海技术物理研究所 | Infrared coke surface detector with multiple chip reversed welding interconnection of wire matrix |
| JP2010027926A (en) * | 2008-07-22 | 2010-02-04 | Toshiba Corp | Semiconductor device and manufacturing method thereof |
| CN207282478U (en) * | 2017-08-30 | 2018-04-27 | 中国科学院上海技术物理研究所 | A kind of cadmium-zinc-teiluride base HgCdTe infrared focal plane device composite construction |
-
2017
- 2017-08-30 CN CN201710760261.7A patent/CN107665865A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0829907A1 (en) * | 1996-09-16 | 1998-03-18 | Rockwell International Corporation | Hybrid focal plane array comprising stabilizing structure |
| US20020024110A1 (en) * | 2000-04-28 | 2002-02-28 | Satoshi Iwatsu | Semiconductor device using bumps, method for fabricating same, and method for forming bumps |
| CN2511954Y (en) * | 2001-12-29 | 2002-09-18 | 中国科学院上海技术物理研究所 | Infrared coke surface detector with multiple chip reversed welding interconnection of wire matrix |
| JP2010027926A (en) * | 2008-07-22 | 2010-02-04 | Toshiba Corp | Semiconductor device and manufacturing method thereof |
| CN207282478U (en) * | 2017-08-30 | 2018-04-27 | 中国科学院上海技术物理研究所 | A kind of cadmium-zinc-teiluride base HgCdTe infrared focal plane device composite construction |
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