CN107658381A - Semiconductor device and its manufacture method, magnetic detection device and electronic compass - Google Patents
Semiconductor device and its manufacture method, magnetic detection device and electronic compass Download PDFInfo
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- CN107658381A CN107658381A CN201610795404.3A CN201610795404A CN107658381A CN 107658381 A CN107658381 A CN 107658381A CN 201610795404 A CN201610795404 A CN 201610795404A CN 107658381 A CN107658381 A CN 107658381A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/80—Constructional details
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
A kind of semiconductor device and its manufacture method, magnetic detection device and electronic compass for possessing magnetic is provided.Semiconductor device possesses：Substrate；Pad, it is configured on substrate；Magnetic, it is configured on substrate；First insulating barrier, it is configured on magnetic；Terminal pad, it is configured on the first insulating barrier；And wiring layer again, pad is connected by it with terminal pad, wherein, when overlooking, at least a portion of magnetic is overlapping with terminal pad.In addition, the manufacture method of semiconductor device comprises the following steps：The top in upper surface with the substrate of pad forms magnetic；The first insulating barrier is formed on magnetic；The terminal pad at least one of top for being overlapped in magnetic is formed on the first insulating barrier, and forms wiring layer again from pad to terminal pad on the first insulating barrier；And external terminal portions are formed in terminal pad.
Description
Technical field
The present invention relates to a kind of semiconductor device, magnetic detection device, the manufacture method of semiconductor device and electronic compass.
Background technology
In the past, known one kind was configured to terminal pad and magnetic when overlooking in the semiconductor device for be built-in with magnetic
Nonoverlapping semiconductor device (referring for example to patent document 1).
Patent document 1：Japanese Unexamined Patent Publication 2010-101648 publications
The content of the invention
Problems to be solved by the invention
However, conventional semiconductor device is in the wafer-level package body (Chip Scale Package) for possessing magnetic
Can not fully it minimize.
The solution used to solve the problem
In the 1st mode of the present invention, there is provided a kind of semiconductor device, the semiconductor device possess：Substrate；Pad, its
It is configured on substrate；Magnetic, it is configured on substrate；First insulating barrier, it is configured on magnetic；Terminal pad, it is configured
In on the first insulating barrier；And wiring layer again, pad is connected by it with terminal pad, wherein, at least the one of magnetic when overlooking
Part is overlapping with terminal pad.
In the 2nd mode of the present invention, there is provided a kind of magnetic detection device, the magnetic detection device possess：Substrate；Magnetic senses
Device, it is configured at substrate；Magnetic-collecting board, it is configured on substrate；First insulating barrier, it is configured on magnetic-collecting board；Terminal pad, it is matched somebody with somebody
It is placed on the first insulating barrier；Pad, it is configured on substrate；Wiring layer again, pad is connected by it with terminal pad；And outer end
Sub-portion, it is configured in terminal pad, wherein, when overlooking, at least a portion of magnetic-collecting board is overlapping with terminal pad.
In the 3rd mode of the present invention, there is provided a kind of manufacture method of semiconductor device, the manufacture method include following step
Suddenly：The top in upper surface with the substrate of pad forms magnetic；The first insulating barrier is formed on magnetic；In the first insulation
The terminal pad at least one of top for being overlapped in magnetic is formed on layer, and on the first insulating barrier from pad to connection
Disk forms wiring layer again；And external terminal portions are formed in terminal pad.
In the 4th mode of the present invention, there is provided a kind of electronic compass, the electronic compass possess：Semiconductor substrate, it is formed
There is integrated circuit；Hall element, it is configured at semiconductor substrate；Magnetic-collecting board, it is configured at the top of semiconductor substrate；First is exhausted
Edge layer, it is configured on magnetic-collecting board；Terminal pad, it is configured on the first insulating barrier；Pad, it is configured on semiconductor substrate；
Wiring layer again, pad is connected by it with terminal pad；And solder ball, it is configured in terminal pad, wherein, the magnetic-collecting board when overlooking
At least a portion it is overlapping with terminal pad.
In addition, the summary of above-mentioned invention does not have the whole features for including the present invention.In addition, the son of these feature groups
Combination can also turn into invention in addition.
Brief description of the drawings
Fig. 1 shows one of the structure of the semiconductor device 100 involved by embodiment 1.
Fig. 2 is the flow chart for the manufacture method for showing the semiconductor device 100 involved by embodiment 1.
Fig. 3 shows one of the structure of the semiconductor device 500 involved by comparative example 1.
Fig. 4 shows one of the structure of the semiconductor device 100 involved by embodiment 2.
Fig. 5 shows one of the structure of the semiconductor device 100 involved by embodiment 3.
Fig. 6 shows one of the structure of the semiconductor device 100 involved by embodiment 4.
Fig. 7 shows one of the structure of the semiconductor device 100 involved by embodiment 5.
Fig. 8 shows one of the structure of the semiconductor device 100 involved by embodiment 6.
Fig. 9 shows one of the structure of the semiconductor device 100 involved by embodiment 7.
Description of reference numerals
10：Substrate；20：Magnetic；21：Magnetic Sensor；25：Substrate energising layer；30：Terminal pad；40：Wiring layer again；45：
Substrate energising layer；50：External terminal portions；61：Insulating barrier；62：Insulating barrier；63：Insulating barrier；64：Insulating barrier；70：Pad；80：
Back coating；90：Post portion；100：Semiconductor device；500：Semiconductor device.
Embodiment
Hereinafter, the present invention is illustrated by the embodiment of invention, but following embodiment is not to patent right
Invention involved by sharp claim is defined.In addition, the combination of the feature illustrated in embodiment may not be all hair
Necessary to bright solution.
[embodiment 1]
Fig. 1 shows one of the structure of the semiconductor device 100 involved by embodiment 1.The semiconductor device 100 of this example has
Standby substrate 10, magnetic 20, substrate energising layer 25, again wiring layer 40, substrate energising layer 45, external terminal portions 50, insulating barrier 61,
62nd, 63,64, pad 70 and back coating 80.
Substrate 10 is the semiconductor substrate formed by silicon, compound semiconductor.Formed with integrated circuit, magnetic in substrate 10
Sensor etc..The substrate 10 of this example has Magnetic Sensor 21.The back side of substrate 10 can be protected by back coating 80.In wafer-shaped
Formed with multiple semiconductor devices 100 on the substrate 10 of state.Semiconductor device 100 is by along pre-determined line of cut pair
Obtained from the substrate 10 of wafer state is cut.The substrate 10 of this example is not limited to have quadrangle form when overlooking.
In this manual, overlook and refer in the case of being formed in the front of substrate 10 on X/Y plane perpendicular to the Z axis side of X/Y plane
To viewpoint.
Pad 70 is configured in electrically engaging between formation and outside on substrate 10.For example, pad 70 is by Al systems or Cu
The material of system is formed.Pad 70 is connected with the integrated circuit in substrate 10 and the grade of Magnetic Sensor 21.
Insulating barrier 62 is formed on substrate 10.Insulating barrier 62 has opening corresponding with pad 70.It is corresponding with pad 70
Opening for example refer to the wiring layer again 40 of top can make to be formed at insulating barrier 62 electrically connected with pad 70 in a manner of opening.
Insulating barrier 62 is one of the second insulating barrier.Second insulating barrier can also be the double-layer structural of insulating barrier 62 and insulating barrier 63.Absolutely
Edge layer 62 and insulating barrier 63 are by polyimides, polybenzoxazoles (Polybenzoxazole), benzocyclobutene
(Benzocyclobutene) insulating materials of any one or combinations thereof and in epoxy resin is formed.The He of insulating barrier 62
The thickness of insulating barrier 63 is 0.1 μm~30 μm.
Magnetic 20 is formed on insulating barrier 63 in the top of substrate 10.In the feelings for the monolayer constructions for not forming insulating barrier 63
Under condition, magnetic 20 is formed on insulating barrier 62.In one example, magnetic 20 is gathering magnet of magnetic amplification etc..Poly- magnetic
Body can both be formed as tabular, can also be formed as block.Magnetic 20 has round-shaped, polygonal shape etc. when overlooking
Shape.On magnetic 20, it is possible to have multiple magnetics 20.This example magnetic 20 lower surface formed with base
Bottom energising layer 25.Magnetic 20 is containing more than at least two soft-magnetic body in Ni, Fe, Co.For example, magnetic 20 by
The ternary-alloy materials such as the binary materials such as Fe-Ni, Fe-Co system, Fe-Ni, Fe-Ni-Co system are formed.The thickness of magnetic 20 is 1 μ
M~50 μm.
Substrate energising layer 25 is formed using at least one party in the Ti based materials and Cu based materials such as Ti, TiW.At one
In, substrate energising layer 25 is using formation such as vacuum vapour deposition, sputtering method, electroplating method, electroless plating methods.For example, substrate
The Ti based materials of energising layer 25 play function as diffusion barrier layer.The thickness of substrate energising layer 25 is preferably more than 0.1 μm.
In addition, substrate energising layer 25 can have the double-layer structural of first cascade metal film and the second stacking metal film.
In one, first cascade metal film is Ti and Cu or TiW and Cu laminated metal film.In addition, first cascade metal film can also
It is Ti, Al and Ti laminated metal film.In one example, the second stacking metal film is Ti and Cu or TiW and Cu laminated metal
Film.On the thickness of first cascade metal film, in the feelings for the laminated metal film that first cascade metal film is Ti and Cu or TiW and Cu
Under condition, their thickness is respectively 0.1 μm~2.0 μm, 0.1 μm~2.0 μm.On the thickness of first cascade metal film,
In the case where first cascade metal film is Ti, Al and Ti laminated metal film, their thickness is respectively 0.1 μm~2.0 μ
M, 0.1 μm~3 μm, 0.1 μm~2.0 μm.In addition, the thickness on the second stacking metal film, metal film is laminated second
In the case of laminated metal film for Ti and Cu or TiW and Cu, their thickness is respectively 0.1 μm~2.0 μm, 0.1 μm~10 μ
M.
Magnetic Sensor 21 is arranged in substrate 10.In addition, Magnetic Sensor 21 by substrate energising layer 25 in a manner of being covered
Configuration.In one example, Magnetic Sensor 21 is Hall element, the silicon Hall member formed e.g. in silicon substrate by impurity diffusion layer
Part.The Magnetic Sensor 21 of this example is configured in around magnetic 20.For example, refer to around magnetic 20 be in magnetic 20
Region as the magnetic after being amplified as magnetic 20 is applied in the case of magnetic-collecting board.Both can be to bow around magnetic 20
The apparent time region overlapping with magnetic 20 or the not region overlapping with magnetic 20 when overlooking.
Insulating barrier 61 be formed on insulating barrier 63 and magnetic 20 on.In the situation for the monolayer constructions for not forming insulating barrier 63
Under, insulating barrier 61 be formed on insulating barrier 62 and magnetic 20 on.Insulating barrier 61 has opening corresponding with pad 70.This example
Insulating barrier 61 is one of the first insulating barrier.In one example, insulating barrier 61 is by polyimides, polybenzoxazoles, benzocyclobutene
And the insulating materials formation of any one or the combinations thereof in epoxy resin.For example, insulating barrier 61 is to pass through rotation
Rubbing method, print process etc. and formed film.The thickness of insulating barrier 61 is 0.1 μm~30 μm.
Terminal pad 30 is formed at the conductive material on insulating barrier 61.Terminal pad 30 has for setting solder ball
Sufficient area.The shape of terminal pad 30 is round-shaped, polygonal shape etc. when overlooking.In one example, Duo Gelian
Disk 30 is connect to be formed on insulating barrier 61.
Wiring layer 40 electrically connects pad 70 with terminal pad 30 again.The wiring layer again 40 of this example is configured as in insulating barrier 61
On from pad 70 extend to terminal pad 30.In addition, wiring layer 40 extends from pad 70 along the inclined-plane of insulating barrier 61 again, insulating
It is connected on layer 61 with terminal pad 30.Wiring layer 40 is distribution of the width than the narrow width of terminal pad 30 again.Terminal pad 30 and match somebody with somebody again
Line layer 40 can also be formed from the same material.
Substrate energising layer 45 is formed using at least one party in the Ti based materials and Cu based materials such as Ti, TiW.At one
In, substrate energising layer 45 is using formation such as vacuum vapour deposition, sputtering method, electroplating method, electroless plating methods.Substrate energising layer
45 thickness is preferably more than 0.1 μm.
In addition, substrate energising layer 45 can have the double-layer structural of first cascade metal film and the second stacking metal film.
In one, first cascade metal film is Ti and Cu or TiW and Cu laminated metal film.In addition, first cascade metal film can also
It is Ti, Al and Ti laminated metal film.In one example, the second stacking metal film is Ti and Cu or TiW and Cu laminated metal
Film.On the thickness of first cascade metal film, in the feelings for the laminated metal film that first cascade metal film is Ti and Cu or TiW and Cu
Under condition, their thickness is respectively 0.1 μm~2.0 μm, 0.1 μm~2.0 μm.On the thickness of first cascade metal film,
In the case where first cascade metal film is Ti, Al and Ti laminated metal film, their thickness is respectively 0.1 μm~2.0 μ
M, 0.1 μm~3 μm, 0.1 μm~2.0 μm.In addition, the thickness on the second stacking metal film, metal film is laminated second
In the case of laminated metal film for Ti and Cu or TiW and Cu, their thickness is respectively 0.1 μm~2.0 μm, 0.1 μm~10 μ
M.
External terminal portions 50 are configured in terminal pad 30.In one example, external terminal portions 50 are to be used to fill with semiconductor
Put the solder ball of 100 external electrical connections.On external terminal portions 50, there can also be post portion in terminal pad 30, in post portion
Upper formation solder ball.
Insulating barrier 64 be arranged at again on wiring layer 40 and insulating barrier 61 on.Insulating barrier 64 covers a part for terminal pad 30
Lid.Insulating barrier 64 is formed at the engaging zones A engaged except terminal pad 30 with external terminal portions 50 in terminal pad 30jArea in addition
Domain.That is, insulating barrier 64 is formed with the opening for external terminal portions 50 to be connected with terminal pad 30.Insulating barrier 64 is sub- by polyamides
The insulating materials of any one or combinations thereof in amine, polybenzoxazoles, benzocyclobutene and epoxy resin is formed.
At least a portion of the magnetic 20 of this example is configured in position overlapping with terminal pad 30 during vertical view.To overlook
The mode overlapping with the region at least a portion for forming magnetic that when makes to be formed the region of terminal pad 30 configures magnetic 20 and even
Connect disk 30.In section view, at least a portion of the magnetic formed below 20 in the region for forming terminal pad 30.
Magnetic 20 can also be configured in position overlapping with multiple terminal pads 30 during vertical view.Can also form magnetic
Property body 20 region in comprising formed terminal pad 30 region configuration.Alternatively, it is also possible to being so that terminal pad 30 and outer end
The engaging zones A that sub-portion 50 engagesjThe region overlapping mode of at least a portion with forming magnetic 20 configure magnetic 20 and
Terminal pad 30.In addition, engaging zones AjIt is formed at the position more in the inner part than terminal pad 30.
The semiconductor device 100 of this example is built-in with the magnetic 20 of magnetic amplification on the substrate 10, so as to high as supporting
Density installation magnetic detection device and acted.Magnetic 20 is with connecting when the semiconductor device 100 of this example is configured as overlooking
Connect that disk 30 is overlapping, therefore smaller magnetic detection device can be realized.In addition, by being configured to magnetic 20 and the weight of terminal pad 30
It is folded, it can realize that magnetic 20 is difficult to the high magnetic detection device of the reliability peeled off.As magnetic detection device, electronics can be enumerated
Compass, magnetic switch, rotary angle detecting device, current sensing means etc..
Fig. 2 is the flow chart for the manufacture method for showing the semiconductor device 100 involved by embodiment 1.In the step s 100,
The top in upper surface with the substrate 10 of pad 70 forms magnetic 20.In step s 110, formed on magnetic 20 exhausted
Edge layer 61.In the step s 120, the terminal pad at least one of top for being overlapped in magnetic 20 is formed on insulating barrier 61
30, and wiring layer 40 again for electrically connecting pad 70 with terminal pad 30 are formed on insulating barrier 61.That is, partly leading on this example
Body device 100, terminal pad 30 and again wiring layer 40 are formed in same process.In this case, terminal pad 30 and again wiring layer
40 are formed from the same material.In step s 130, external terminal portions 50 are formed in terminal pad 30.The semiconductor device of this example
100 manufacture method is one, and semiconductor device 100 can be also formed using other processes.
In addition, semiconductor device 100 can also have the step of forming insulating barrier 62 on the substrate 10.Furthermore it is possible to have
Have different from insulating barrier 62 insulating barrier 63 are formed on insulating barrier 62 the step of.Can have insulating barrier 62 and insulating barrier 63
It is open and wiring layer 40 are formed again on pad 70 the step of.
Semiconductor device 100 can be carried external terminal portions 50 using ball fitting machine, after nitrogen Reflow Soldering, pass through
Cutting process is carried out to substrate 10 to carry out singualtion.Thus, for example, obtain indulging for 2.5mm, it is horizontal be 2.5mm, thickness be
0.75mm crystal wafer chip dimension encapsulation.
[comparative example 1]
Fig. 3 shows one of the structure of the semiconductor device 500 involved by comparative example 1.In this example, pair with embodiment 1
The difference of involved semiconductor device 100 is illustrated.
It is not overlapping with magnetic 20 that semiconductor device 500 is configured as the terminal pad 30 when overlooking.In addition, the magnetic of this example
Body 20 is configured as the engaging zones A that terminal pad 30 engages with external terminal portions 50 when overlookingjIt is not overlapping with magnetic 20.Cause
This, needs the region by magnetic 20 is set with setting the region of terminal pad 30 to be provided separately in semiconductor device 500, so as to
It is difficult to minimize.In addition, on semiconductor device 500, when overlooking, magnetic 20 is not overlapping with terminal pad 30, therefore sets
The free degree step-down of meter.In addition, semiconductor device 500, compared with embodiment, magnetic 20 is easily peeled off, and reliability is low.
[embodiment 2]
Fig. 4 shows one of the structure of the semiconductor device 100 involved by embodiment 2.The magnetic of this example when overlooking
20 part is overlapping with terminal pad 30.
It is overlapping with terminal pad 30 that magnetic 20 is configured as at least a portion when overlooking.In addition, magnetic 20 is configured
For at least a portion and engaging zones A when overlookingjIt is overlapping.Therefore, the semiconductor device 100 of this example and comparative example 1 are partly led
Body device 500, which is compared, can realize miniaturization.
Especially, the magnetic 20 on this example, there is the area magnetic 20 bigger than the area of terminal pad 30.Therefore,
Magnetic 20 is formed as protruding from the region formed with terminal pad 30 when overlooking.So, if configured to overlook when magnetic
At least a portion of body 20 is overlapping with terminal pad 30, then even in the area magnetic 20 bigger than the area of terminal pad 30
In the case of, it is also easy to minimize semiconductor device 100.In addition, it is overlapping with terminal pad 30 by being configured to magnetic 20, can
Realize that magnetic 20 is difficult to the high magnetic detection device of the reliability peeled off.
[embodiment 3]
Fig. 5 shows one of the structure of the semiconductor device 100 involved by embodiment 3.The semiconductor device 100 of this example is also
Possesses post portion 90.
Post portion 90 electrically connects external terminal portions 50 with terminal pad 30.In one example, post portion 90 is by with terminal pad 30 or again
The identical conductive material of wiring layer 40 is formed.Post portion 90 can also be by the different electric conductivity of from terminal pad 30 and again wiring layer 40
Material is formed.Post portion 90 is formed in the opening of insulating barrier 64 for the lower section for being arranged on external terminal portions 50.The bonding land of this example
Domain AjRefer to the region that external terminal portions 50 engage with post portion 90.But it is also possible to the area that post portion 90 is engaged with terminal pad 30
Domain is defined as engaging zones Aj。
Terminal pad 30 electrically connects with the lower end in post portion 90.The terminal pad 30 of this example is formed at the whole of the lower section in post portion 90
Face.But as long as terminal pad 30 electrically connects with least a portion of the lower end in post portion 90.In addition, the terminal pad 30 of this example
It is formed on the step configuration of insulating barrier 63 and insulating barrier 64, but can also be formed in planar configuration.In this example, pass through
Terminal pad 30 is formed on step, to form the space for being arranged on magnetic 20 under terminal pad 30.Thus, magnetic
20 can be configured to overlook when it is overlapping with least a portion in post portion 90.
[embodiment 4]
Fig. 6 shows one of the structure of the semiconductor device 100 involved by embodiment 4.This illustrates semiconductor device 100
Top view.The semiconductor device 100 of this example possesses 1 magnetic 20 and 4 terminal pads 30.
When overlooking, magnetic 20 is at least overlapping with two terminal pads 30.The magnetic 20 of this example is configured as and 4 companies
2 terminal pads 30 connect in disk 30 are overlapping.On magnetic 20, when overlooking, the area of magnetic 20 is more than the face of terminal pad 30
Product.In addition, the magnetic 20 of this example has round-shaped when overlooking, but there can also be other shapes such as polygonal shape
Shape.
Semiconductor device 100 has quadrangle form when overlooking.Substrate 10 also has quadrangle form when overlooking.
In one, multiple centers of the terminal pad 30 away from substrate 10 equably configure.For example, 4 terminal pads 30 are configured in substrate respectively
10 4 angles.4 terminal pads 30 of this example are formed with identical size respectively, but can also be formed in different sizes.
[embodiment 5]
Fig. 7 shows one of the structure of the semiconductor device 100 involved by embodiment 5.This illustrates semiconductor device 100
Top view.The difference of the semiconductor device 100 of this example and the semiconductor device 100 involved by embodiment 4 is, this example
Semiconductor device 100 to be configured as magnetic 20 overlapping with whole terminal pads 30 in 4 terminal pads 30.
The magnetic 20 of this example be configured as overlook when it is equably overlapping with 4 terminal pads 30, but magnetic 20 and
The area in the overlapping region of terminal pad 30 can also be unequal.In addition, magnetic 20 is configured in the big of substrate 10 when overlooking
Central part is caused, but be not restricted to that this.So, the semiconductor device 100 on this example, it is free to be formed when selection is overlooked
The position of magnetic 20 and the position for forming terminal pad 30, therefore the free degree designed is high.
[embodiment 6]
Fig. 8 shows one of the structure of the semiconductor device 100 involved by embodiment 6.This illustrates semiconductor device 100
Top view.The difference of the semiconductor device 100 of this example and the semiconductor device 100 involved by embodiment 4 and embodiment 5
It is, it is only overlapping with 1 terminal pad 30 in 4 terminal pads 30 that the semiconductor device 100 of this example is configured as magnetic 20.
When overlooking, magnetic 20 and terminal pad 30 are respectively provided with round-shaped.Even in magnetic 20 only with 1 terminal pad
In the case that 30 is overlapping, the center of magnetic 20 can also be different from the center of terminal pad 30.But magnetic 20
Center can also be overlapping with the center of terminal pad 30.
[embodiment 7]
Fig. 9 shows one of the structure of the semiconductor device 100 involved by embodiment 7.This illustrates semiconductor device 100
Top view.The semiconductor device 100 of this example has in common that with the semiconductor device 100 involved by embodiment 6, magnetic
Body 20 is only overlapping with 1 terminal pad 30 in 4 terminal pads 30.But with the semiconductor device 100 involved by embodiment 6
Difference is that the magnetic 20 of this example is not round-shaped but with parallel arranged 3 rectangular shapes when overlooking.
Magnetic 20 includes the magnetic-collecting board of 3 rectangular shapes.But as long as the shape of magnetic 20 can be with for magnetic
The shape that the pre-determined ratio of sensor 21 is amplified to magnetic, is not particularly limited to this example.For example, magnetic 20
There can be the different shape such as U-shaped when overlooking.
As described above, in the semiconductor device 100 involved by this specification, at least the one of magnetic 20 when overlooking
Part is configured in the position overlapping with terminal pad 30, therefore is capable of the miniaturization of realization device.In addition, involved by this specification
And semiconductor device 100 in, be free to selection overlook when formed magnetic 20 position and formed terminal pad 30 position
Put, therefore the free degree designed is high.In addition, at least one of the magnetic 20 of semiconductor device 100 involved by this specification
Point the position overlapping with terminal pad 30 is configured in, therefore can realize that magnetic 20 is difficult to the high device of the reliability peeled off.
More than, using embodiment, the present invention is described, but the technical scope of the present invention is not limited to
Scope described in above-mentioned embodiment.It will be clear for those skilled in the art that above-mentioned embodiment can be applied each
Kind changes and modifications.According to the record of patent claims it is clear that, be applied with obtained by this changes and modifications
Mode also can be included in the present invention technical scope in.
Should be noted that on shown in patent claims, specification and accompanying drawing device, system, program
And the execution sequence that action, process, step and stage in method etc. is respectively handled, it is " first as long as no especially indicating
In ... ", " ... before " etc. and not processing of the processing output below above in situation about using, it becomes possible to appoint
The order of meaning realizes above-mentioned execution sequence.On the motion flow in patent claims, specification and accompanying drawing, for side
Face and use " first, ", " then, " etc. is illustrated, it is not intended that must sequentially be implemented with this.
Claims (15)
1. a kind of semiconductor device, it is characterised in that possess：
Substrate；
Pad, it is configured on the substrate；
Magnetic, it is configured at the top of the substrate；
First insulating barrier, it is configured on the magnetic；
Terminal pad, it is configured on first insulating barrier；And
Wiring layer again, it connects the pad with the terminal pad,
Wherein, when overlooking, at least a portion of the magnetic is overlapping with the terminal pad.
2. semiconductor device according to claim 1, it is characterised in that
The external terminal portions being configured in the terminal pad are also equipped with,
The engaging zones that at least a portion of the magnetic engages with the terminal pad with the external terminal portions when overlooking
It is overlapping.
3. semiconductor device according to claim 1 or 2, it is characterised in that
Possess the multiple terminal pads being configured on first insulating barrier,
When overlooking, the magnetic is at least overlapping with two terminal pads.
4. the semiconductor device according to any one of claims 1 to 3, it is characterised in that
The substrate is quadrangle form,
Multiple terminal pads are respectively arranged at four angles of the substrate on first insulating barrier,
When overlooking, at least a portion of the magnetic is overlapping with each terminal pad of multiple terminal pads.
5. the semiconductor device according to any one of Claims 1 to 4, it is characterised in that
The second insulating barrier is also equipped with the substrate, second insulating barrier has opening corresponding with the pad,
The magnetic is configured on second insulating barrier,
First insulating barrier be configured on second insulating barrier and the magnetic on,
The wiring layer again is configured as extending to the terminal pad from the pad on first insulating barrier.
6. semiconductor device according to claim 1, it is characterised in that
The magnetic is magnetic-collecting board,
The semiconductor device is also equipped with the Magnetic Sensor being configured in when overlooking around the magnetic-collecting board.
7. the semiconductor device according to any one of claim 1~6, it is characterised in that
The terminal pad is circle when overlooking.
8. a kind of magnetic detection device, it is characterised in that possess：
Substrate；
Magnetic Sensor, it is configured at the substrate；
Magnetic-collecting board, it is configured at the top of the substrate；
First insulating barrier, it is configured on the magnetic-collecting board；
Terminal pad, it is configured on first insulating barrier；
Pad, it is configured on the substrate；
Wiring layer again, it connects the pad with the terminal pad；And
External terminal portions, it is configured in the terminal pad,
Wherein, when overlooking, at least a portion of the magnetic-collecting board is overlapping with the terminal pad.
9. magnetic detection device according to claim 8, it is characterised in that
The Magnetic Sensor is when overlooking around the magnetic-collecting board.
10. magnetic detection device according to claim 8 or claim 9, it is characterised in that
The engaging zones that at least a portion of the magnetic-collecting board engages with the terminal pad with the external terminal portions when overlooking
It is overlapping.
11. the magnetic detection device according to any one of claim 8~10, it is characterised in that
The second insulating barrier is also equipped with the substrate, second insulating barrier has opening corresponding with the pad,
The magnetic-collecting board is configured on second insulating barrier,
First insulating barrier be configured on second insulating barrier and the magnetic-collecting board on,
The wiring layer again is configured as extending to the terminal pad from the pad on first insulating barrier.
12. the magnetic detection device according to any one of claim 8~11, it is characterised in that
When overlooking, the area of the magnetic-collecting board is more than the area of the terminal pad.
13. a kind of manufacture method of semiconductor device, it is characterised in that comprise the following steps：
The top in upper surface with the substrate of pad forms magnetic；
The first insulating barrier is formed on the magnetic；
The terminal pad at least one of top for being overlapped in the magnetic is formed on first insulating barrier, and in institute
State and form wiring layer again on the first insulating barrier from the pad to the terminal pad；And
External terminal portions are formed in the terminal pad.
14. the manufacture method of semiconductor device according to claim 13, it is characterised in that further comprising the steps of：
The second insulating barrier is formed on the substrate；
Threeth insulating barrier different from second insulating barrier is formed on second insulating barrier；And
By second insulating barrier and the 3rd insulating layer openings, formed on the pad described in wiring layer again.
15. a kind of electronic compass, it is characterised in that possess：
Semiconductor substrate, it is formed with integrated circuit；
Hall element, it is configured at the semiconductor substrate；
Magnetic-collecting board, it is configured at the top of the semiconductor substrate；
First insulating barrier, it is configured on the magnetic-collecting board；
Terminal pad, it is configured on first insulating barrier；
Pad, it is configured on the semiconductor substrate；
Wiring layer again, it connects the pad with the terminal pad；And
Solder ball, it is configured in the terminal pad,
Wherein, when overlooking, at least a portion of the magnetic-collecting board is overlapping with the terminal pad,
When overlooking, the Hall element is configured in around the magnetic-collecting board.
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| JP2016145719A JP6839938B2 (en) | 2016-07-25 | 2016-07-25 | Semiconductor devices, magnetic detectors, semiconductor device manufacturing methods and electronic compasses |
| JP2016-145719 | 2016-07-25 |
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| CN201621025805.2U Active CN206022431U (en) | 2016-07-25 | 2016-08-31 | Semiconductor device, magnetic detection device and electronic compass |
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| CN107765196B (en) * | 2017-09-27 | 2019-04-05 | 东北大学 | It is a kind of for measuring the experimental rig of magnetic matrix induced magnetic field |
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| CN1674270A (en) * | 2004-03-24 | 2005-09-28 | 雅马哈株式会社 | Semiconductor device, magnetic sensor, and magnetic sensor unit |
| JP2010101648A (en) * | 2008-10-21 | 2010-05-06 | Asahi Kasei Electronics Co Ltd | Magnetic sensor |
| US20160064451A1 (en) * | 2006-12-08 | 2016-03-03 | Infineon Technologies Ag | Semiconductor component comprising magnetic field sensor |
| CN206022431U (en) * | 2016-07-25 | 2017-03-15 | 旭化成微电子株式会社 | Semiconductor device, magnetic detection device and electronic compass |
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| JPH0595139A (en) * | 1991-10-01 | 1993-04-16 | Asahi Chem Ind Co Ltd | Hall element and manufacture thereof |
| JPH1051046A (en) * | 1996-08-05 | 1998-02-20 | Asahi Kasei Denshi Kk | Small-sized hall element |
| JP4402865B2 (en) * | 2002-07-22 | 2010-01-20 | 旭化成エレクトロニクス株式会社 | Magnetoelectric transducer and method for producing the same |
| US7830011B2 (en) | 2004-03-15 | 2010-11-09 | Yamaha Corporation | Semiconductor element and wafer level chip size package therefor |
| JP4779606B2 (en) | 2005-11-29 | 2011-09-28 | セイコーエプソン株式会社 | Electronic substrate, manufacturing method thereof, and electronic apparatus |
| EP2813860B1 (en) | 2012-02-07 | 2017-10-18 | Asahi Kasei Microdevices Corporation | Magnetic sensor and magnetic detection method of the same |
| KR102116147B1 (en) * | 2014-03-06 | 2020-05-28 | 매그나칩 반도체 유한회사 | Buried Magnetic Sensor |
| JP6301823B2 (en) | 2014-12-18 | 2018-03-28 | アルプス電気株式会社 | Magnetic detector |
| JP2016138774A (en) * | 2015-01-27 | 2016-08-04 | 旭化成エレクトロニクス株式会社 | Sensor device and method for manufacturing sensor device |
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| CN1674270A (en) * | 2004-03-24 | 2005-09-28 | 雅马哈株式会社 | Semiconductor device, magnetic sensor, and magnetic sensor unit |
| US20160064451A1 (en) * | 2006-12-08 | 2016-03-03 | Infineon Technologies Ag | Semiconductor component comprising magnetic field sensor |
| JP2010101648A (en) * | 2008-10-21 | 2010-05-06 | Asahi Kasei Electronics Co Ltd | Magnetic sensor |
| CN206022431U (en) * | 2016-07-25 | 2017-03-15 | 旭化成微电子株式会社 | Semiconductor device, magnetic detection device and electronic compass |
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| JP6839938B2 (en) | 2021-03-10 |
| CN206022431U (en) | 2017-03-15 |
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