CN107658241A - Absorbability lamp holder face - Google Patents
Absorbability lamp holder face Download PDFInfo
- Publication number
- CN107658241A CN107658241A CN201710618682.6A CN201710618682A CN107658241A CN 107658241 A CN107658241 A CN 107658241A CN 201710618682 A CN201710618682 A CN 201710618682A CN 107658241 A CN107658241 A CN 107658241A
- Authority
- CN
- China
- Prior art keywords
- radiation source
- lamp holder
- light fixture
- substructure
- radiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Embodiment described herein relates generally to the lamp adapter assembly in hot processing chamber room with absorbability upper surface.In one embodiment, processing chamber housing may include：Superstructure；Substructure；The superstructure is connected to the substructure by base ring, the base ring；Substrate support, the substrate support are arranged between the superstructure and the substructure；Substructure is arranged at below substrate support；Lamp holder is positioned adjacent to substructure and one or more fixed electric light positions are formed in the lamp holder, and lamp holder includes the second surface for being adjacent to the first surface and face of the substructure first surface, and the wherein first surface includes absorbing coating；And one or more light fixtures, each light fixture include radiation generating source and are positioned to be connected with one or more fixed electric light positions.
Description
The application is the divisional application of Application No. 201480023727.X application for a patent for invention.
Background of invention
Invention field
Embodiment described herein relates in general to be used in the lamp holder in thermal processing chamber.
Description of related art
Rapid thermal treatment (RTP) is used in semiconductor chip manufacture with semiconductor wafer with epitaxial deposition (epi) system
Upper generation chemical modification or etching surface texture.RTP and the high intensity incandescent lamp that an array is depended on epi system conventionals,
The high-intensity incandescent lamps size of the array meets into lamp holder and is directed on substrate or chip.Electric light be provided electrical power and
Quickly it can be closed and be started, and most of the radiation of electric light can be directed to substrate.Therefore, chip can be non-
Often rapidly heat without substantial heating chamber and once remove power from electric light, chip can almost same speed
Rapidly it is cooled.
Some infrared electro lamp positions are in lamp holder.During processing, the radiation from electric light radiates logical in processing chamber housing
Cross eyebrow window, optical channel and bottom window and fall on the semiconductor substrate in rotation.In this way, needed for chip is heated to
Treatment temperature.Lamp holder can include some light pipes so that the radiation from tungsten halogen element electric light is sent into processing chamber housing.Electric light is divided
Into multizone, it is divided into the electric light of multizone to be configured in a manner of radiation symmetric.Each region is independently-powered by electronic lamp driver,
Electronic lamp driver is then controlled by multi input, multi output controller.Electric light by a large amount of cloth thread casings and heavy electric cloth cable and
It is connected to electronic lamp driver.
Even if it is a normality that reflecting surface, which is used to heat energy is maintained and concentrated on substrate, excessive reflecting surface will cause
Slow chamber cooling.More slow chamber cooling can cause longer step to change time and less yield number.
Therefore, the technical field may require that the cooling control after preferably heat treatment.
Summary of the invention
Embodiment described herein relates in general to be used in the lamp holder of thermal processing chamber.In an embodiment
In, processing chamber housing may include：Superstructure；Substructure；The superstructure is connected to the lower junction by base ring, the base ring
Structure；Substrate support, the substrate support are arranged between the superstructure and the substructure；Substructure is arranged at substrate
Below support base；Lamp holder is positioned adjacent to substructure and one or more fixed electric light positions are formed in the lamp holder,
Lamp holder includes the second surface for being adjacent to the first surface and face of the substructure first surface, the wherein first surface
Include absorbing coating；And one or more light fixtures, each light fixture include radiation generating source and are positioned to
It is connected with one or more fixed electric light positions.
In another embodiment, may include for heating the processing chamber housing of substrate：Processing chamber housing；Substrate support,
The substrate support is arranged in processing chamber housing and is used for supporting substrate；Substructure is arranged at below substrate support；Lamp holder
It is positioned adjacent to substructure and one or more fixed electric light positions is formed in the lamp holder, lamp holder includes and is adjacent to this
The second surface of the first surface and face of the substructure first surface, the wherein first surface include absorbing coating and
Light fixture includes radiation generating source.
Brief Description Of Drawings
It is (some of by reference to the embodiment of this case content in order to which the features described above of this case content is understood in detail
It is illustrated in the drawings), the more specifically description of content being briefly summarized above can be obtained.It is it should be noted, however, that attached
Figure only illustrates the exemplary embodiment of the present invention and is therefore not construed as limitation of the scope of the invention, because the present invention can be held
Recognize the embodiment of other equally effective property.
Fig. 1 depicts the diagrammatic cross-sectional view for heating chamber according to the dorsal part of one embodiment of the present invention；With
Fig. 2A and Fig. 2 B are to illustrate figure according to the schematic of lamp holder of one embodiment of the present invention.
To make to be easier to understand the present invention, in the conceived case, identical component symbol can specify in different figures
Shared similar elements.It is to be understood that the element disclosed in an embodiment valuably can be incorporated in other embodiment
And it need not be further discussed below.
Specifically describe
Embodiment disclosed herein relate in general to semiconductor processes and be more precisely related in epi chambers or
Used radiation absorptive lamp holder face in rtp chamber room.Lamp holder before using reflecting surface with by radiation reflective return chamber.This
A little reflecting surfaces cause to be difficult to cool down, because the radiation discharged during cooling can be reflected back toward chamber.By making lamp holder
Reflecting surface can absorb radiation, and the radiation transmitted during cooling can be absorbed by lamp holder and therefore efficiently from processing
Chamber shifts.Embodiments of the present invention disclosed herein can more clearly describe with reference to following accompanying drawings.
Fig. 1 depicts the diagrammatic cross-sectional view for heating chamber 100 according to the dorsal part of an embodiment.Processing chamber
Room 100 can be used to handle one or more substrates, the deposition materials on the first surface of substrate 108.Processing chamber
Room 100 generally comprises the light fixture 102 of (among miscellaneous part) an array for heating, is arranged at processing chamber housing
The dorsal part 104 of substrate support 106 in 100.Substrate support 106 can be discoid substrate support base 106 (as shown), or can
For the ring-type substrate support (not shown) for supporting substrate from substrate edges, or can be by the post or pin of minimal-contact and by base
The needle-like support base that plate supports from bottom.
Substrate support 106 is located in processing chamber housing 100 and between superstructure 128 and substructure 114.Top
Structure 128 and substructure 114 (along with the base ring 136 being arranged between superstructure 128 and substructure 114) are usual
Define the interior zone of processing chamber housing 100.Superstructure 128, substructure 114, or both all can according to user need
Ask and be cheese, flat, inclination or other three-dimensional shapes.In one embodiment, superstructure 128 and bottom
Both structures 114 are all cheese.Substrate 108 (not in scale) can be placed into processing chamber housing 100 and by load port (not
Show) and be positioned in substrate support 106, the load port is hidden by substrate support 106.
Base ring 136 is in general comprising load port, processing gas air inlet 174, and gas outlet 178.Base
Seat ring 136 can have in general rectangle, and the rectangular long side is on load port and rectangular multiple short sides are distinguished
On processor air inlet 174 and gas outlet 178.Base ring 136 can have any desired shape, as long as load end
Mouth, processing gas air inlet 174, and gas outlet 178 offset about 90 degree with load port in angle relative to each other.
For example, load port can be located at the side between processing gas air inlet 174 and gas outlet 178, and handle
Gas inlet 174 is arranged at the opposite end of base ring 136 with gas outlet 178.In various embodiments, load port
103rd, processing gas air inlet 174 and gas outlet 178 are aligned with one another and be arranged at substantially the same horizontal level.
The configuration of processing gas air inlet 174 and gas outlet 178 makes concentric processing accessory that annular screening be significantly enhanced
The ability for covering containment light leakage is possibly realized, and allows the thermometric for being less than 500 degrees Celsius more accurate.Base ring 136 can wrap
Containing one or more coolant flow channels for being disposed adjacent to the O-ring 182,184 for cooling base ring 136.Base ring
136 can also be covered by the opaque quartzy pad with necessary otch (not shown).
Shown substrate support 106 is in the high processing position of frame, can be but vertically movable by actuator to processing position
The load situation for putting lower section passes through substrate support 106 and central shaft 132 to allow lift pins 105 to contact substructure 114
Interior hole, and by substrate 108 from the lifting of substrate support 106.Robot (not shown) can subsequently enter processing chamber housing 100 with logical
Substrate 108 is attached to processing chamber housing 100 and removed from processing chamber housing 100 by overload port.Substrate support 106 then may be used
It is actuated up to processing position so that substrate 108 (while its components side 116 is face-up) is placed in into substrate support 106
On front side 110.
The inner space of processing chamber housing 100 is divided into surface by substrate support 106 (although being located at processing position)
Processing gas region 156 and the lower section of substrate support 106 purification gas region 158.Substrate support 106 is in process phase
Between the spatially abnormal shadow with minimization hot-fluid and processing gas stream in processing chamber housing 100 rotated by central shaft 132
Ring, and therefore promote the uniform treatment of substrate 108.The acceptor center axle 132 of substrate support 106 is supported, in load and removal phase
Between, and in some embodiments, during the processing of substrate 108, central shaft 132 is moved with direction 134 up and down
Dynamic substrate 108.Substrate support 106 can be formed to absorb spoke from electric light 102 by carborundum or with the graphite of silicon carbide coating
Penetrate energy and conduct emittance to substrate 108.
In general, the central window segment of superstructure 128 and the bottom of substructure 114 are by optical transparent material
Formed, such as quartz.The thickness of the curvature of superstructure 128 can be configured to curvature to be provided in order to uniform in processing chamber housing
Flow uniformity flat geometry.
One or more electric lights (such as light fixture 102 of an array) can be disposed adjacent to bottom in a specific way
Structure 114 and positioned at the lower section of substructure 114 and around central shaft 132 with when processing gas by when independently control base board
The temperature of 108 different zones, thus material is promoted to be deposited on the first surface of substrate 108.Although not hashing out herein,
Deposition materials can include silicon, the silicon of doping, germanium, the silicon of doping, SiGe, SiGe, GaAs, gallium nitride or the aluminium nitride of doping
Gallium.
Light fixture 102 can include hot generating element (being depicted as electric lamp bulb 141 herein), and be configured to substrate 108
The temperature being heated in the range of about 200 degrees Celsius to about 1600 degrees Celsius.In further embodiment, heat generator
Element can include non-incandescent solid state radiation device, such as LED (light emitting diode), or other radiation generation devices.Each electric light
Component 102 can be coupled to power distribution plate (such as printed circuit board (PCB) (PCB) 152), and power can pass through the power distribution Plate supplying
To each light fixture 102.Light fixture 102 is located in lamp holder 145, and lamp holder 145 can pass through during processing or after processing
Such as it is introduced into the cooling stream of passage 149 between light fixture 102 and is cooled.Lamp holder 145 can conductively and radiate
Cooling substructure 114 in ground is partly because the pole of lamp holder 145 and is adjacent to substructure 114.Lamp holder 145 can also cool down electric light wall
And the side wall (not shown) of the reflector around electric light.Alternately, substructure 104 can be cooled with convection type.
Depending on substructure 114 may not be contacted with using lamp holder 145.On the further of Fig. 2A figures and 2B lamp holder 145
Description is contained in down.
Ring shielding 167 is optionally arranged at substrate support 106 nearby and is coupled to the side of chamber body 101
Wall.Ring shielding 167 prevents or the leakage of heat/optical noise of components side 116 of the minimization from electric light 102 to substrate 108, in addition
Preheating zone for processing gas is provided.Ring shielding 167 can by chemical vapor deposition carborundum (CVD SiC), sintering stone
The carborundum of ink coating, the carborundum of generation, opaque quartz, the quartz of coating, or any similar suitable material institute
It is made, the chemical breakdown that suitable material can be caused by resistant to treatment and resistance to purification gas.
Traditionally, substrate temperature uses one or more pyrometers watched by port in lamp holder 145 (not
Show) and inferred by the high temperature measurement of the bottom of substrate support.It can be needed to reflector lamp spoke by the thermometric carried out by technology
Penetrate and be corrected, particularly in low substrate temperature, and need to infer the technology of substrate temperature from substrate support temperature.Due to
With ring shielding 167 and because substrate 108 is only heated by substrate support 106 by dorsal part, one or more optics high temperature
Meter (one is shown as 118) can be used in temperature survey/control of substrate.Aforementioned temperature measurement is possible, because optics is high
Temperature meter 118 can only sensing carrys out self-heating in the case where the minimum background radiation from electric light 102 directly reaches leucoscope 118
The radiation of substrate 108.
The outside that reflector 122 is optionally placed in superstructure 128 is infrared will be left from the radiation of substrate 108
Light reflection is back to substrate 108.Reflector 122 can have the reflecting surface 123 in face of superstructure 128.Reflector 122 can make
Superstructure 128 is fixed on clamp ring 130.Reflector 122 can be made by metal (such as aluminium or stainless steel).From reflection
The efficiency that device 122 reflects can be improved by coating highly-reflective coating (such as gold) at least a portion of reflecting surface 123.
Reflector 122 can have one or more processing channels 149 (as shown in Figure 2 A).Passage 126, which is connected to, is formed at reflector
Path (not shown) on 122 sides.The path is configured to carrying of liquids stream (such as water) and can be to cover the table of reflector 122
Any desired pattern of the part in face or entirety and flatly run along the side of reflector 122 to cool down reflector
122.Superstructure 128 can also have the path (not shown) being formed between reflector 122 and superstructure 128.Path can connect
Liquid (such as cooling agent) is received to cool down superstructure 128.
From processing gas source of supply 172 supply processing gas by being formed at the processing gas of the side wall of base ring 136
Body air inlet 174 and be introduced into processing gas region 156.Processing gas air inlet 174 is configured to in general radiation direction
Direction guides processing gas.During film forming technology, substrate support 106, which is located in processing position, (is adjacent to processing gas
Body air inlet 174 and with processing gas air inlet 174 about in identical height) allow processing gas to upstream and along fluid road
Footpath 173 surrounds and across the first surface of substrate 108.Processing gas as processing gas air inlet 174 by being located at processing
Gas outlet 178 on the offside of chamber 100 and discharge in processing gas region 156 (along fluid path 175).Pass through gas
Body gas outlet 178 and by processing gas remove can be promoted by being coupled to the vavuum pump 180 of gas outlet 178.When processing gas
Body air inlet 174 is aligned with one another with gas outlet 178 and is arranged at almost when identical height, it is believed that such flat
Row layout will cause general closed planar, uniform gas (when when flatter superstructure 128 is combined (will be in described below))
Body stream crosses substrate 108.Further uniformity of radiation can be by being provided via the rotary plate 108 of substrate support 106.
The purification gas supplied by purge gas source 162 can pass through the purification gas for the side wall for being formed at base ring 136
Air inlet 164 and be introduced into purification gas region 158.Purification gas air inlet 164 be arranged on processing gas air inlet 174 it
Under height on.If using ring shielding 167, ring shielding 167 may be disposed at processing gas air inlet 174 and enter with purification gas
Between gas port 164.In any case, purification gas air inlet 164 is configured to net with generality radiation inward direction guiding
Change gas.If there is expectation, purification gas air inlet 164 is configured to generality radiation upward direction guiding purification gas.
During film formation is handled, substrate support 106 be located at a position and causes purification gas to dirty and surrounded along fluid path 165
And across the dorsal part 104 of substrate support 106.In the case where being not only restricted to any particular theory, it is believed that the energy of flow of purification gas is protected
Shield substantially prevents processing gas stream from entering purification gas region 158, or reduces processing gas and diffuse into purification gas area
Domain 158 (region i.e. under substrate support 106).Purification gas is discharged (along gas path from purification gas region 158
166) and through the offside for being located at processing chamber housing 100 such as purification gas air inlet 164 gas outlet 178 and from processing chamber
Room empties.
Exemplary lamp holder
Fig. 2A and Fig. 2 B are to illustrate figure according to the schematic of lamp holder 145 of an embodiment.Fig. 2A is represented according to one
The substructure 114 with lamp holder 145 of embodiment and the section view of printed circuit board (PCB) 152.As will be retouched in lower
State, light fixture 220 is attached in the lamp holder 145 with absorbing coating 230.Absorbing coating 230 can be come from by absorbing
The radiation of one or more parts of chamber is hot from chamber dissipation to assist.Light fixture 220 and lamp holder 145 are lamp holder group
A part for part and beside the miscellaneous part (such as reflector (not shown)).Fig. 2 B represent the lamp holder according to an embodiment
145 top view.Just it has been observed that substructure 114 can be formed circular in general, shallow martini (martini) wineglass or
Shape with the funnel of central opening 202.Light fixture 220 by it is specified, optimization it is desired in a manner of be disposed adjacent to
Substructure and central shaft (such as Fig. 1 central shaft 132) is surrounded under the substructure 114.Light fixture 220 and lamp
First 145 are used together with the temperature of independently control base board different zones.
Fig. 2A illustrates what substructure 114, lamp holder 145 and one or more lamp adapter assemblies 220 were connected with PCB152
Situation.The situation for describing some elements for clarity and not is understood that in skilled artisan.
PCB 152 can be any preferred circuit plate for being designed to control by power distribution to one or more light fixtures 220.
PCB 152 can further include one or more connected slots 212 (be shown in which as six connected slots, for it is described
One or more light fixtures 220 are connected).Even if it is shown in which six light fixtures 220, any amount of light fixture
220 can be incorporated in embodiment described herein.Even if PCB 152 is depicted as flat herein, PCB can be according to processing chamber housing
Demand and shaped.In one embodiment, pcb board is set to parallel to lamp holder 145.
In general each of one or more light fixtures 220 include electric lamp bulb 222 and lamp base
223.Electric lamp bulb 222 can be that can heat substrate and substrate maintains to the electric light of assigned temperature, such as Halogen lamp LED, infrared ray
Lamp etc., and it is adapted as the similar device of heater.Include bulb 222 and lamp base 223 even if described, one or
More embodiments can include the radiation generating source of substitution bulb 222, lamp base 223 or both combination.Radiation production
Source of students is that can produce any device of radiation for heating substrate, such as the bulb with incandescent filament, contains radiation gas
The bulb of body, or solid state radiation sources (such as LED or laser diode).In skilled artisan it will be understood that having spoke
Penetrate the various combination of generating source, radiation generating source can be used for replacing or combined with bulb 222 or lamp base 223 without departing from
Embodiment described herein.
Substructure 114 can be made up of trnaslucent materials (such as quartz) and can include one or more above-mentioned with
The related element of portion's structure 114, such as funnelform shape.The thickness of substructure can be between 4 and 6 millimeters (mm).Lamp
First 145 can be placed under substructure 114 and extremely be adjacent to substructure 114.In one embodiment, lamp holder 145 with
Substructure 114 is at a distance of almost 1 millimeter.
Lamp holder 145 can have first surface 214 and second surface 216.Lamp holder 145 can be single overall.Furthermore lamp holder
145 can be made up of conductive material, such as copper or aluminium.Lamp holder 145 has ad-hoc location and the direction that can ensure that electric lamp bulb 222
Multiple fixed electric light positions 204.Lamp holder 145 can have more such as 400 or more fixed electric light positions 204.Fixed electric light position
Put 204 can it is multiple with one heart circular directions or other walk inwardly.Fixed electric light position 204 is when hole extends to external diameter from internal diameter
Depth can be increased.Another way, the thickness of lamp holder external diameter can be thick compared with internal diameter.Fixed electric light position 204 can be in lamp holder 145
Drilling.In one embodiment, lamp base 223 is fixed with fixed-direction orientation by lamp holder 145 and by lamp holder 145
Cooled down.
Light fixture 220 and connected slot 212 show that this number is not intended to be limiting with hexad.When
Each need it is more or less to maintain appropriate substrate temperature when, each can have more or less.Again it is important that reason
Solve the side view of three-dimensional structure.In this way, even if part seems to configure in a linear fashion, the combination of any position or position is all can
Can.For example, on circular PCB 152, light fixture 220, which can be placed in, is located in 3 centimetres of both X and Y-axis
(cm) on interval, so as to fill the circle.Technical staff, which will be understood that, in the art has being permitted for this embodiment
Multiple changing type.
Fig. 2 B illustrate the top view of the lamp holder 145 according to an embodiment.Lamp holder 145 can have tapered form.Again
Person, the shape of lamp holder 145 can substantially match the shape of substructure 114.Lamp holder 145 has first surface 214 and second
Surface 216.First surface is disposed adjacent to substructure 114.Second surface 216 is right against first surface 214.First surface
214 can be substantially uniform.
First surface 214 can further have one or more adhesivenesses enhancing construction, such as it is micro- grinding, primary coat cover or
Subbing (primer) (not shown).Adhesiveness enhancing construction can strengthen for the viscous of the film layer that is arranged on first surface 214
Attached property.First surface 214 or lamp holder 145 can be substantially parallel to pedestal 106 or substrate 108.
First surface 214 has the absorbing coating 230 being arranged on first surface 214.Absorbing coating 230 can be energy
Enough any coatings for absorbing radiation.In one embodiment, including absorbing coating 230 is for charcoal blacks or comprising graphite
Composition.The example of carbon black pigment can include the desirable Lord companies for deriving from and being located in the card of North Carolina StateZ306 polyurethane coatings.More examples include desirable derive from positioned at New York mountain valley villa
The HiE-Coat of Aremco Products companiesTM840 series of high temperature coating, include 840-C, 840-CM, 840-M coatings.
Embodiment disclosed in this is not intended to limit the possible embodiment of the invention discussed at this.
Can be the wavelength as caused by the substrate or part in processing chamber housing as the radiation that absorbing coating 230 is absorbed,
Such as the radiation of the wavelength with less than 4 microns (micron).Absorbing coating 230 (can include spraying, silk by different technologies
Wire mark brush, alumite, chemical vapor deposition (CVD), physical vapour deposition (PVD) (PVD) or other deposition techniques) sunk
Product.Absorbing coating 230 optionally absorbing wavelength or can be wide wavelength variation absorbent.Absorbing coating 230 can be by
One or more film layers are formed.In one embodiment, absorbing coating 230 includes the carbon between one and six layer
Mineral black.
The first surface 214 for receiving absorbing coating 230 is generally comprised parallel to substructure 114, pedestal 106, substrate
The surface of 108 or its combination.State in another way, the side wall of fixed electric light position 204 be usually have it is reflexive.Absorb
Property coating can extend to the external diameter (as shown in Figure 2 B) of first surface 214 from the internal diameter of first surface 214.Absorbing coating 230
There can be the absorbefacient thickness that can lift the radiation from chamber and allow freely to shift in the hot of lamp holder 145.At one
In embodiment, the thickness of absorbing coating 230 is at least 50 mils (mil) thickness.Even if illustrate equably deposition herein to spread all over
First surface 214, absorbing coating 230 can have the different thickness for spreading all over first surface 214, such as thick close to inner radius
Degree is thicker and then toward towards the direction of external diameter becoming relatively thin absorbing coating 230.In other embodiments, absorbability applies
Layer 230 is relatively thin in the inner radius close to first surface 214 and then toward towards the direction of external diameter becoming thicker.
In operation, the processing chamber housing 100 comprising substrate 108 and pedestal 106 will be heated using light fixture 220 with
Reach optimum temperature.When this is performed with a cyclic program, processing chamber housing 100 must relatively quickly cool down and use
In the heating and cooling of precision.The part (including pedestal 106 and substrate 108) of processing chamber housing 100 will be based on temperature release spoke
Penetrate.The some of them (such as radiation with 4 microns or longer of wavelength) of these radiation will be inhaled by substructure 114
Receive.Radiation less than 4 microns can be subsequently passed through substructure 114 and absorbability coating 230 is received.By this means, inhale
The property received coating 230 can increase the cooling in processing chamber housing 100.
It is not wishing to be bound by theory, it is believed that absorbing coating 230 can increase the cooling in processing chamber housing 100.Work as processing
The part of chamber 100 is heated, and they radiate release.These radiation (as described above)s can be processed the miscellaneous part institute of chamber 100
Absorb.These radiation 100 can also penetrate through substructure 114 and the lamp holder 145 that arrives.Reflecting surface on lamp holder 145 can will be from processing
The radiation reflective that chamber 100 is received return and by substructure 114, and the radiation will be absorbed by substructure 114 or
The miscellaneous part of processed chamber 100 is received.By using absorbing coating 230, non-reflective background, radiation will not return
Processing chamber housing 100 and processing chamber housing 100 can be cooled down efficiently.
One or more cooling systems can be used to be cooled down for lamp holder 145, such as be transmitted through the liquid of passage 149
Cooling.In one embodiment, lamp holder 145 can maintain 250 degrees Celsius or lower, such as less than 200 degrees Celsius.Lamp holder
Temperature to maintain heat from processing chamber housing 100 be displaced through substructure 114 for be important.
In another embodiment, reflector 122 can have the suction formed at least a portion of reflecting surface 123
The property received coating (not shown).Believe that the radiation from light fixture 220 may pass through substrate 108 and substrate support 106, thus it is anti-
Emitter 122 and leucoscope 118 are received.Radiation from light fixture 220 is therefore in the high temperature carried out to substrate 108
Mistake, also referred to as noise can be produced by measuring reading.By being deposited at least a portion of the reflecting surface 123 of reflector 122
Absorbing coating, the radiation from light fixture 220 received by reflector 122 can be absorbed rather than be reflected.Reflecting
The absorbability of the radiation of device 122 is it is believed that the noise that leucoscope 118 is received can be reduced.Furthermore formed on reflector 122
Absorbing coating enhanced rad consume and will help to realize cooling faster.
Although foregoing disclosure is related to embodiments of the present invention, can be designed in the base region without departing from the present invention
Other and the further embodiment of the present invention, and the scope of the present invention is determined by following claims.
Claims (15)
1. a kind of light fixture, including：
Source structure is radiated, the radiation source structure includes first surface, and the first surface has absorbing coating；And
One or more radiation source positions, one or more radiation source positions are formed in the radiation source structure,
Increase depth when wherein one or more radiation source positions extend to external diameter from internal diameter.
2. light fixture as claimed in claim 1, wherein the absorbing coating is charcoal blacks.
3. light fixture as claimed in claim 1, wherein the radiation source structure is taper.
4. light fixture as claimed in claim 1, wherein the radiation source structure is by water cooling.
5. light fixture as claimed in claim 1, wherein the absorbing coating is thicker and subsequent near the internal diameter
It is thinning towards the external diameter.
6. a kind of light fixture, including：
Cone of radiation source structure, the radiation source structure include first surface, and the first surface has absorbing coating；
One or more radiation source positions, one or more radiation source positions are formed in the radiation source structure,
Increase depth when wherein one or more radiation source positions extend to external diameter from internal diameter；And
One or more passages, one or more passage be arranged on one or more radiation source positions it
Between.
7. light fixture as claimed in claim 6, wherein the absorbing coating is charcoal blacks.
8. light fixture as claimed in claim 6, wherein the radiation source structure is by water cooling.
9. light fixture as claimed in claim 6, wherein the absorbing coating is thicker and subsequent near the internal diameter
It is thinning towards the external diameter.
10. a kind of light fixture, including：
Source structure is radiated, the radiation source structure includes first surface, and the first surface has absorbing coating, wherein described
Radiating source structure has the first thickness positioned at external diameter and the second thickness positioned at internal diameter, wherein the first thickness is more than described
Second thickness；
One or more radiation source positions, one or more radiation source positions are formed in the radiation source structure.
11. light fixture as claimed in claim 10, wherein the absorbing coating is charcoal blacks.
12. light fixture as claimed in claim 10, wherein the radiation source structure is by water cooling.
13. light fixture as claimed in claim 10, wherein the radiation source structure includes aluminium or copper.
14. light fixture as claimed in claim 10, change wherein the absorbing coating has across the first surface
Thickness.
15. light fixture as claimed in claim 10, wherein the radiation source structure is taper.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361876444P | 2013-04-26 | 2013-04-26 | |
| US61/876,444 | 2013-04-26 | ||
| CN201480023727.XA CN105143505B (en) | 2013-04-26 | 2014-04-21 | Absorbability lamp cap face |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201480023727.XA Division CN105143505B (en) | 2013-04-26 | 2014-04-21 | Absorbability lamp cap face |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107658241A true CN107658241A (en) | 2018-02-02 |
Family
ID=51792319
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201480023727.XA Expired - Fee Related CN105143505B (en) | 2013-04-26 | 2014-04-21 | Absorbability lamp cap face |
| CN201710618682.6A Pending CN107658241A (en) | 2013-04-26 | 2014-04-21 | Absorbability lamp holder face |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201480023727.XA Expired - Fee Related CN105143505B (en) | 2013-04-26 | 2014-04-21 | Absorbability lamp cap face |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR20160003099A (en) |
| CN (2) | CN105143505B (en) |
| WO (1) | WO2014176174A1 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IT201600099783A1 (en) * | 2016-10-05 | 2018-04-05 | Lpe Spa | REACTOR FOR EPITAXIAL DEPOSITION WITH EXTERIOR REFLECTOR OF THE REACTION CHAMBER AND METHOD OF COOLING A SUSCECTOR AND SUBSTRATES |
| CN111725114B (en) * | 2020-06-30 | 2023-07-14 | 北京北方华创微电子装备有限公司 | Position correction device for heating lamp |
| US20220322492A1 (en) * | 2021-04-06 | 2022-10-06 | Applied Materials, Inc. | Epitaxial deposition chamber |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5937142A (en) * | 1996-07-11 | 1999-08-10 | Cvc Products, Inc. | Multi-zone illuminator for rapid thermal processing |
| US6108490A (en) * | 1996-07-11 | 2000-08-22 | Cvc, Inc. | Multizone illuminator for rapid thermal processing with improved spatial resolution |
| US20070077355A1 (en) * | 2005-09-30 | 2007-04-05 | Applied Materials, Inc. | Film formation apparatus and methods including temperature and emissivity/pattern compensation |
| US20100143579A1 (en) * | 2008-12-10 | 2010-06-10 | Sumco Techxiv Corporation | Method and apparatus for manufacturing epitaxial silicon wafer |
| US8150242B2 (en) * | 2008-10-31 | 2012-04-03 | Applied Materials, Inc. | Use of infrared camera for real-time temperature monitoring and control |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IT1271233B (en) * | 1994-09-30 | 1997-05-27 | Lpe | EPITAXIAL REACTOR EQUIPPED WITH FLAT DISCOID SUSCEPECTOR AND HAVING GAS FLOW PARALLEL TO THE SUBSTRATES |
| JP4518463B2 (en) * | 2001-05-23 | 2010-08-04 | マットソン サーマル プロダクツ ゲゼルシャフト ミット ベシュレンクテル ハフツング | Substrate heat treatment method and heat treatment apparatus |
| US20030020027A1 (en) * | 2001-07-25 | 2003-01-30 | Nordson Corporation | Apparatus for infrared reduction in ultraviolet radiation generators |
| US20120237695A1 (en) * | 2009-12-23 | 2012-09-20 | 2-Pye Solar, LLC | Method and apparatus for depositing a thin film |
-
2014
- 2014-04-21 WO PCT/US2014/034828 patent/WO2014176174A1/en active Application Filing
- 2014-04-21 CN CN201480023727.XA patent/CN105143505B/en not_active Expired - Fee Related
- 2014-04-21 CN CN201710618682.6A patent/CN107658241A/en active Pending
- 2014-04-21 KR KR1020157033583A patent/KR20160003099A/en not_active Application Discontinuation
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5937142A (en) * | 1996-07-11 | 1999-08-10 | Cvc Products, Inc. | Multi-zone illuminator for rapid thermal processing |
| US6108490A (en) * | 1996-07-11 | 2000-08-22 | Cvc, Inc. | Multizone illuminator for rapid thermal processing with improved spatial resolution |
| US20070077355A1 (en) * | 2005-09-30 | 2007-04-05 | Applied Materials, Inc. | Film formation apparatus and methods including temperature and emissivity/pattern compensation |
| US8150242B2 (en) * | 2008-10-31 | 2012-04-03 | Applied Materials, Inc. | Use of infrared camera for real-time temperature monitoring and control |
| US20100143579A1 (en) * | 2008-12-10 | 2010-06-10 | Sumco Techxiv Corporation | Method and apparatus for manufacturing epitaxial silicon wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105143505B (en) | 2018-08-07 |
| CN105143505A (en) | 2015-12-09 |
| KR20160003099A (en) | 2016-01-08 |
| WO2014176174A1 (en) | 2014-10-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101728796B1 (en) | Led substrate processing | |
| US10170342B2 (en) | Flow controlled liner having spatially distributed gas passages | |
| TWI663628B (en) | Absorbing lamphead face | |
| CN104885192B (en) | Quartzy upper arch and lower domes | |
| CN105144355B (en) | For carrying out the apparatus and method for of low-temperature measurement in wafer processing process | |
| KR102167554B1 (en) | Improved edge ring lip | |
| TWI632249B (en) | Absorbing reflector for semiconductor processing chamber | |
| KR102434364B1 (en) | Circular lamp arrays | |
| WO2019070382A1 (en) | Lamp infrared radiation profile control by lamp filament design and positioning | |
| WO2013181263A1 (en) | Apparatus and methods for rapid thermal processing | |
| TWI605533B (en) | Lamphead pcb with flexible standoffs | |
| CN105143505B (en) | Absorbability lamp cap face | |
| US20200045776A1 (en) | Multizone lamp control and individual lamp control in a lamphead | |
| TWI685897B (en) | Rapid thermal processing chamber with linear control lamps | |
| TWI614796B (en) | Integrated solution for solid state light sources in a process chamber |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20180202 |