CN105143505B - Absorbability lamp cap face - Google Patents
Absorbability lamp cap face Download PDFInfo
- Publication number
- CN105143505B CN105143505B CN201480023727.XA CN201480023727A CN105143505B CN 105143505 B CN105143505 B CN 105143505B CN 201480023727 A CN201480023727 A CN 201480023727A CN 105143505 B CN105143505 B CN 105143505B
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- radiation source
- processing chamber
- chamber housing
- substrate
- radiation
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- 238000001816 cooling Methods 0.000 claims description 17
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 238000000746 purification Methods 0.000 description 17
- 239000000463 material Substances 0.000 description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 6
- 229910010271 silicon carbide Inorganic materials 0.000 description 6
- CLODVDBWNVQLGO-UHFFFAOYSA-N 1,2,4,5-tetrachloro-3-(2,6-dichlorophenyl)benzene Chemical compound ClC1=CC=CC(Cl)=C1C1=C(Cl)C(Cl)=CC(Cl)=C1Cl CLODVDBWNVQLGO-UHFFFAOYSA-N 0.000 description 5
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
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- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Embodiment described herein relates generally to the lamp adapter assembly with absorbability upper surface in hot processing chamber room.In one embodiment, processing chamber housing may include：Superstructure；Substructure；The superstructure is connected to the substructure by base ring, the base ring；Substrate support, the substrate support are set between the superstructure and the substructure；Substructure is set to below substrate support；Lamp cap is positioned adjacent to substructure and one or more fixed electric light positions are formed in the lamp cap, and lamp cap includes the second surface for being adjacent to the first surface and face of the substructure first surface, and wherein the first surface includes absorbing coating；And one or more light fixtures, each light fixture include radiation generating source and are positioned to be connected with one or more fixed electric light positions.
Description
Background of invention
Invention field
Embodiment described herein relates in general to be used in the lamp cap in thermal processing chamber.
Description of related art
Rapid thermal treatment (RTP) is used in semiconductor chip manufacture in semiconductor wafer with epitaxial deposition (epi) system
Upper generation chemical modification or etching surface texture.RTP and the high intensity incandescent lamp that an array is depended on epi system conventionals,
The high-intensity incandescent lamps size of the array meets into lamp cap and is directed on substrate or chip.Electric light be provided electrical power and
Quickly it can be closed and be started, and most of the radiation of electric light can be directed to substrate.Therefore, chip can be non-
It often rapidly heats and is removed from electric light without substantial heating chamber and once by power, chip can almost identical speed
Rapidly it is cooled.
Some infrared electro lamp positions are in lamp cap.During processing, the radiation from electric light radiates logical in processing chamber housing
It crosses eyebrow window, optical channel and lower part window and falls on the semiconductor substrate in rotation.By this method, needed for chip is heated to
Treatment temperature.Lamp cap may include some light pipes will be sent to processing chamber housing from the radiation of tungsten halogen element electric light.Electric light is divided
At multizone, the electric light of multizone is divided into be configured in a manner of radiation symmetric.Each region is independently-powered by electronic lamp driver,
Electronic lamp driver is then controlled by multi input, multi output controller.Electric light is by a large amount of cloth thread casings are with heavy electric cloth cable
It is connected to electronic lamp driver.
Even if reflecting surface is used to maintaining and concentrating on being a normality on substrate thermal energy, excessive reflecting surface will cause
Slow chamber cooling.More slow chamber cooling can cause longer step to change time and less yield number.
Therefore, the technical field may require that the cooling control after preferably heat treatment.
Summary of the invention
Embodiment described herein relates in general to the lamp cap for being used in thermal processing chamber.In an embodiment
In, processing chamber housing may include：Superstructure；Substructure；The superstructure is connected to the lower junction by base ring, the base ring
Structure；Substrate support, the substrate support are set between the superstructure and the substructure；Substructure is set to substrate
Below support base；Lamp cap is positioned adjacent to substructure and one or more fixed electric light positions are formed in the lamp cap,
Lamp cap includes the second surface for being adjacent to the first surface and face of the substructure first surface, the wherein first surface
Including absorbing coating；And one or more light fixtures, each light fixture include radiation generating source and are positioned to
It is connected with one or more fixed electric light positions.
In another embodiment, the processing chamber housing for heating the substrate may include：Processing chamber housing；Substrate support,
The substrate support is set in processing chamber housing and is used to support substrate；Substructure is set to below substrate support；Lamp cap
It is positioned adjacent to substructure and one or more fixed electric light positions is formed in the lamp cap, lamp cap includes to be adjacent to this
The second surface of the first surface and face of the substructure first surface, the wherein first surface include absorbing coating and
Light fixture includes radiation generating source.
Brief Description Of Drawings
It is (some of by reference to the embodiment of this case content in order to which the features described above of this case content is understood in detail
It is illustrated in the drawings), the more specifically description for the content being briefly summarized above can be obtained.It should be noted, however, that attached
Figure only illustrates the exemplary embodiment of the present invention and is therefore not construed as limitation of the scope of the invention, because the present invention can be held
Recognize the embodiment of other equally effective property.
Fig. 1 depicts the diagrammatic cross-sectional view of the heat treatment chamber of back side according to one embodiment of the present invention；With
Fig. 2A and Fig. 2 B are that the schematic of lamp cap according to one embodiment of the present invention is painted figure.
To make to be easier to understand the present invention, in the conceived case, identical component symbol can specify in different figures
Shared similar elements.It is to be understood that the element disclosed in an embodiment can be valuably incorporated in other embodiment
And it need not be further discussed below.
It specifically describes
Embodiment disclosed herein relate in general to semiconductor processes and be more precisely related in epi chambers or
Used radiation absorptive lamp cap face in rtp chamber room.Lamp cap before is using reflecting surface radiation reflective is returned chamber.This
A little reflecting surfaces cause to be difficult to cool down, because the radiation discharged during cooling can be reflected back toward chamber.By making lamp cap
Reflecting surface can absorb radiation, and the radiation transmitted during cooling can be absorbed by lamp cap and therefore efficiently from processing
Chamber shifts.Embodiments of the present invention disclosed herein can more clearly be described with reference to following attached drawings.
Fig. 1 depicts the diagrammatic cross-sectional view of the heat treatment chamber 100 of back side according to one embodiment.Processing chamber
Room 100 can be used to handle one or more substrates, be included in deposition materials on the first surface of substrate 108.Processing chamber
Room 100 generally comprises the light fixture 102 of (in other component) an array for heating, is set to processing chamber housing
The back side 104 of substrate support 106 in 100.Substrate support 106 can be discoid substrate support base 106 (as shown), or can
For the cyclic annular substrate support (not shown) for supporting substrate from substrate edges, or can be by the column or needle of minimal-contact and by base
The needle-like support base that plate is supported from bottom.
Substrate support 106 is in processing chamber housing 100 and between superstructure 128 and substructure 114.Top
Structure 128 and substructure 114 (along with the base ring 136 being set between superstructure 128 and substructure 114) are usual
Define the interior zone of processing chamber housing 100.Superstructure 128, substructure 114, or both all can according to user need
It asks and is cheese, flat, inclination or other three-dimensional shapes.In one embodiment, superstructure 128 and lower part
Both structures 114 are all cheese.Substrate 108 (not in scale) can be placed into processing chamber housing 100 and by load port (not
Show) and be positioned in substrate support 106, which is hidden by substrate support 106.
In general base ring 136 includes load port, processing gas air inlet 174 and gas outlet 178.Base
Seat ring 136 can have general rectangle, and the rectangular long side is on load port and rectangular multiple short sides are distinguished
On processor air inlet 174 and gas outlet 178.Base ring 136 can have any desired shape, as long as load end
Mouth, processing gas air inlet 174 and gas outlet 178 deviate about 90 degree with load port in angle relative to each other.
For example, load port can be located at the side between processing gas air inlet 174 and gas outlet 178, and handle
Gas inlet 174 is set to the opposite end of base ring 136 with gas outlet 178.In various embodiments, load port
103, processing gas air inlet 174 and gas outlet 178 are aligned with one another and be set to substantially the same horizontal position.
The configuration of processing gas air inlet 174 and gas outlet 178 makes concentric processing accessory that annular screening be significantly enhanced
The ability for covering containment light leakage is possibly realized, and is allow more acurrate less than 500 degrees Celsius of thermometric.Base ring 136 can wrap
Containing one or more coolant flow channels for being disposed adjacent to the O-ring 182,184 for cooling base ring 136.Base ring
136 can also be covered by the opaque liner with the quartz of necessary notch (not shown).
Shown in substrate support 106 be in the high processing position of frame, can be but vertically movable by actuator to processing position
The load situation of lower section is set to allow lift pins 105 to contact substructure 114 and across substrate support 106 and central shaft 132
Interior hole, and substrate 108 is lifted from substrate support 106.Robot (not shown) can subsequently enter processing chamber housing 100 with logical
Substrate 108 is installed to processing chamber housing 100 and is removed from processing chamber housing 100 in overload port.Substrate support 106 then may be used
It is actuated up to processing position so that substrate 108 (while its components side 116 is face-up) is placed in substrate support 106
On front side 110.
The inner space of processing chamber housing 100 is divided into above substrate by substrate support 106 (although being located at processing position)
Processing gas region 156 and the lower section of substrate support 106 purification gas region 158.Substrate support 106 is in process phase
Between spatially abnormal shadow with minimization hot-fluid and processing gas stream in processing chamber housing 100 is rotated by central shaft 132
It rings, and therefore promotes the uniform treatment of substrate 108.106 acceptor center axis 132 of substrate support is supported, in load and removal phase
Between, and in some embodiments, during the processing of substrate 108, central shaft 132 is moved with direction 134 up and down
Dynamic substrate 108.Substrate support 106 can be formed by silicon carbide or with the graphite of silicon carbide coating to absorb spoke from electric light 102
It penetrates energy and conducts radiation energy to substrate 108.
In general, the central window segment of superstructure 128 and the bottom of substructure 114 are by optical transparent material
It is formed, such as quartz.The thickness of the curvature of superstructure 128 can be configured to provide in order to uniform in processing chamber housing with curvature
Flow uniformity flat geometry.
One or more electric lights (such as light fixture 102 of an array) can be disposed adjacent to lower part in a specific way
Structure 114 and positioned at the lower section of substructure 114 and around central shaft 132 with when processing gas by when independently control substrate
Thus the temperature of 108 different zones promotes material to be deposited on the first surface of substrate 108.Although not hashing out herein,
Deposition materials may include silicon, the silicon of doping, germanium, the silicon of doping, SiGe, the SiGe of doping, GaAs, gallium nitride or aluminium nitride
Gallium.
Light fixture 102 may include hot generating element (being depicted as electric lamp bulb 141 herein), and be configured to substrate 108
It is heated to temperature in the range of about 200 degrees Celsius to about 1600 degrees Celsius.In further embodiment, heat generator
Element may include non-incandescent solid state radiation device, such as LED (light emitting diode) or other radiation generation devices.Each electric light
Component 102 can be coupled to power distribution plate (such as printed circuit board (PCB) 152), and power can pass through the power distribution Plate supplying
To each light fixture 102.Light fixture 102 is located in lamp cap 145, and lamp cap 145 can pass through during processing or after processing
Such as the cooling down for channel 149 being introduced between light fixture 102 flows and is cooled.Lamp cap 145 can conductively and radiate
Cooling substructure 114 in ground is partly because 145 pole of lamp cap and is adjacent to substructure 114.Lamp cap 145 can also cool down electric light wall
And the side wall (not shown) of the reflector around electric light.Alternatively, substructure 104 can be cooled with convection type.
Depending on substructure 114 may not be contacted with using lamp cap 145.About the further of the lamp cap 145 of Fig. 2A figures and 2B
Description is contained in down.
Ring shielding 167 is optionally set to substrate support 106 nearby and is coupled to the side of chamber body 101
Wall.Ring shielding 167 prevents or the leakage of heat/optical noise of components side 116 of the minimization from electric light 102 to substrate 108, in addition
Preheating zone for processing gas is provided.Ring shielding 167 can by chemical vapor deposition silicon carbide (CVD SiC), sintering stone
The silicon carbide of ink coating, silicon carbide, opaque quartz, the quartz of coating or any similar suitable material institute of generation
It is made, the chemical breakdown that suitable material can be caused by resistant to treatment and resistance to purification gas.
Traditionally, substrate temperature uses one or more pyrometers watched by port in lamp cap 145 (not
Show) and inferred by the high temperature measurement of the bottom of substrate support.It can be needed to reflector lamp spoke by the thermometric carried out by technology
It penetrates and is corrected, especially in low substrate temperature, and need to infer from substrate support temperature the technology of substrate temperature.Due to
With ring shielding 167 and since substrate 108 is only heated by substrate support 106 by back side, one or more optics high temperature
Meter (one is shown as 118) can be used in temperature measurement/control of substrate.Aforementioned temperature measurement is possible, because optics is high
Temperature meter 118 can only sensing carrys out self-heating in the case where the minimum background radiation from electric light 102 directly reaches leucoscope 118
The radiation of substrate 108.
It is infrared will be left from the radiation of substrate 108 that reflector 122 is optionally placed in the outside of superstructure 128
Light reflection is back to substrate 108.Reflector 122 can have the reflecting surface 123 in face of superstructure 128.Reflector 122 can make
It is fixed on superstructure 128 with clamp ring 130.Reflector 122 can be made by metal (such as aluminium or stainless steel).From reflection
The efficiency that device 122 reflects can be improved by coating highly-reflective coating (such as gold) at least part in reflecting surface 123.
Reflector 122 can have one or more processing channels 149 (as shown in Figure 2 A).Channel 126, which is connected to, is formed in reflector
Access (not shown) on 122 sides.The access is configured to carrying of liquids stream (such as water) and can be to cover 122 table of reflector
Any desired pattern of the part in face or entirety and flatly run along the side of reflector 122 to cool down reflector
122.Superstructure 128 can also have the access (not shown) being formed between reflector 122 and superstructure 128.Access can connect
Liquid (such as coolant) is received to cool down superstructure 128.
Supply deserved processing gas by being formed in the processing gas of the side wall of base ring 136 from processing gas source of supply 172
Body air inlet 174 and be introduced into processing gas region 156.Processing gas air inlet 174 is configured to in general radiation direction
Direction guides processing gas.During film forming technology, substrate support 106, which is located in processing position, (is adjacent to processing gas
Body air inlet 174 and in height about identical with processing gas air inlet 174) allow processing gas to upstream and along fluid road
Diameter 173 surrounds and across the first surface of substrate 108.Processing gas as processing gas air inlet 174 by being located at processing
Gas outlet 178 on the offside of chamber 100 and be discharged in processing gas region 156 (along fluid path 175).Pass through gas
Body gas outlet 178 and by processing gas removal can be promoted by being coupled to the vacuum pump 180 of gas outlet 178.When processing gas
Body air inlet 174 is aligned with one another with gas outlet 178 and is set to almost when identical height, it is believed that such flat
Row layout (when flatter superstructure 128 is combined (will be in described below)) will cause general plane, uniform gas
Body stream crosses substrate 108.Further uniformity of radiation can be by being provided via 106 rotary plate 108 of substrate support.
The purification gas supplied by purge gas source 162 can be by being formed in the purification gas of the side wall of base ring 136
Air inlet 164 and be introduced into purification gas region 158.Purification gas air inlet 164 be arranged on processing gas air inlet 174 it
Under height on.If using ring shielding 167, ring shielding 167 may be disposed at processing gas air inlet 174 and purification gas into
Between gas port 164.In any case, purification gas air inlet 164 is configured to net with generality radiation inward direction guiding
Change gas.If there is expectation, purification gas air inlet 164 is configured to guide purification gas with generality radiation upward direction.
During film formation is handled, substrate support 106 is located at a position and makes purification gas to dirty and surrounded along fluid path 165
And across the back side of substrate support 106 104.In the case where being not only restricted to any specific theory, it is believed that the energy of flow of purification gas is protected
Shield substantially prevents processing gas stream from entering purification gas region 158, or reduces processing gas and diffuse into purification gas area
Domain 158 (region i.e. under substrate support 106).Purification gas is discharged from purification gas region 158 (along gas path
166) and through such as purification gas air inlet 164 positioned at the gas outlet 178 of the offside of processing chamber housing 100 and from processing chamber
Room empties.
Exemplary lamp cap
Fig. 2A and Fig. 2 B are that the schematic of lamp cap 145 according to one embodiment is painted figure.Fig. 2A is indicated according to one
The section view of the substructure 114 and printed circuit board 152 with lamp cap 145 of embodiment.As will be retouched in lower
It states, light fixture 220 is attached in the lamp cap 145 with absorbing coating 230.Absorbing coating 230 can be come from by absorbing
The radiation of one or more components of chamber is to assist heat to dissipate from chamber.Light fixture 220 and lamp cap 145 are lamp cap group
A part for part and beside the other component (such as reflector (not shown)).Fig. 2 B indicate lamp cap according to one embodiment
145 vertical view.Just it has been observed that substructure 114 can be formed general round, shallow martini (martini) wineglass or
Shape with 202 funnel of central opening.Light fixture 220 by it is specified, optimization it is desired in a manner of be disposed adjacent to
Substructure and under substructure 114 and surround central shaft (such as central shaft 132 of Fig. 1).Light fixture 220 and lamp
First 145 are used together to independently control the temperature of substrate different zones.
Fig. 2A is painted what substructure 114, lamp cap 145 and one or more lamp adapter assemblies 220 were connect with PCB 152
Situation.The case where describing certain elements for clarity and not is that can understand in skilled artisan.
PCB 152 can be designed to control the preferred circuit plate of power distribution to one or more light fixtures 220 to be any.
PCB 152 can further include one or more connected slots 212 (be shown here as six connected slots, for it is described
One or more light fixtures 220 are connected).Even if six light fixtures 220, any amount of light fixture is shown here
220 can be incorporated in embodiment described herein.Even if PCB 152 is depicted as flat herein, PCB can be according to processing chamber housing
Demand and shaped.In one embodiment, pcb board is set to be parallel to lamp cap 145.
In general each of one or more light fixtures 220 include electric lamp bulb 222 and lamp base
223.Electric lamp bulb 222 can be that can heat the substrate and maintain substrate the electric light of assigned temperature, such as halogen lamp, infrared ray
Lamp etc. and its be suitable for the similar device of heating device.Even if it is described include light bulb 222 and lamp base 223, one or
More embodiments may include the radiation generating source for replacing light bulb 222, lamp base 223 or both combination.Radiation production
Source of students be can generate any device of the radiation for heating the substrate, such as the light bulb with incandescent filament, containing radiation gas
The light bulb or solid state radiation sources (such as LED or laser diode) of body.In skilled artisan it will be understood that having spoke
Penetrate the various combination of generating source, radiation generating source can be used for replacing or combined with light bulb 222 or lamp base 223 without departing from
Embodiment described herein.
Substructure 114 can be made of trnaslucent materials (such as quartz) and may include one or more above-mentioned under
114 relevant element of portion's structure, such as funnelform shape.The thickness of substructure can be between 4 and 6 millimeters (mm).Lamp
First 145 can be placed under substructure 114 and extremely be adjacent to substructure 114.In one embodiment, lamp cap 145 with
Substructure 114 is at a distance of almost 1 millimeter.
Lamp cap 145 can have first surface 214 and second surface 216.Lamp cap 145 can be single whole.Furthermore lamp cap
145 can be made of conductive material, such as copper or aluminium.Lamp cap 145 has specific position and the direction that can ensure that electric lamp bulb 222
Multiple fixed electric light positions 204.Lamp cap 145 can have mostly such as 400 or more fixed electric light positions 204.Fixed electric light position
Set 204 can multiple concentric circular directions or other walk inwardly.Fixed electric light position 204 is when hole extends to outer diameter from internal diameter
Depth can be increased.The thickness of another way, lamp cap outer diameter can be compared with internal diameter thickness.Fixed electric light position 204 can be in lamp cap 145
Drilling.In one embodiment, lamp base 223 is fixed with fixed-direction orientation by lamp cap 145 and by lamp cap 145
It is cooled down.
Light fixture 220 and connected slot 212 show that this number is not intended to be limiting with hexad.When
Each need it is more or less to maintain appropriate substrate temperature when, each can have more or less.Again it is important that reason
Solve the side view of three-dimensional structure.In this way, even if component seems to configure in a linear fashion, the combination of any position or position is all can
Can.For example, on round PCB 152, light fixture 220, which can be placed in, is located in 3 centimetres of both X and Y-axis
(cm) on interval, to fill the circle.In the art the skilled person will understand that having being permitted for this embodiment
Multiple changing type.
Fig. 2 B are painted the vertical view of lamp cap 145 according to one embodiment.Lamp cap 145 can have tapered form.Again
Person, the shape of lamp cap 145 can substantially match the shape of substructure 114.Lamp cap 145 has first surface 214 and second
Surface 216.First surface is disposed adjacent to substructure 114.Second surface 216 is right against first surface 214.First surface
214 can be substantially uniform.
First surface 214 can further have one or more adhesivenesses enhancing construction, such as it is micro- grinding, primary coat cover or
Subbing (primer) (not shown).Adhesiveness enhancing construction can enhance for being set to the viscous of the film layer on first surface 214
Attached property.First surface 214 or lamp cap 145 can be substantially parallel to pedestal 106 or substrate 108.
First surface 214 has the absorbing coating 230 being set on first surface 214.Absorbing coating 230 can be energy
Enough any coatings for absorbing radiation.In one embodiment, including absorbing coating 230 is for charcoal blacks or comprising graphite
Composition.The example of carbon black pigment may include the desirable Lord companies for deriving from and being located in the card of North Carolina StateZ306 polyurethane coatings.More examples include that desirable derive from is located at New York mountain valley villa
The HiE-Coat of Aremco Products companiesTM840 series of high temperature coating, including 840-C, 840-CM, 840-M coating.
Embodiment disclosed in this is not intended to limit the possible embodiment in this present invention discussed.
The radiation absorbed by absorbing coating 230 can be the wavelength caused by the indoor substrate of processing chamber or component,
Such as the radiation with the wavelength less than 4 microns (micron).Absorbing coating 230 (can include spraying, silk by different technologies
Wire mark brush, alumite, chemical vapor deposition (CVD), physical vapour deposition (PVD) (PVD) or other deposition techniques) it is sunk
Product.Absorbing coating 230 optionally absorbing wavelength or can be wide wavelength variation absorbent.Absorbing coating 230 can be by
One or more film layers are formed.In one embodiment, absorbing coating 230 includes the carbon between one and six layer
Mineral black.
The first surface 214 of reception absorbing coating 230, which generally comprises, is parallel to substructure 114, pedestal 106, substrate
The surface of 108 or its combination.State in another way, the side wall of fixed electric light position 204 be usually have it is reflexive.It absorbs
Property coating can extend to the outer diameter (as shown in Figure 2 B) of first surface 214 from the internal diameter of first surface 214.Absorbing coating 230
There can be the thickness for the absorbability that can promote the radiation from chamber and allow freely to shift in the hot of lamp cap 145.At one
In embodiment, the thickness of absorbing coating 230 is at least 50 mils (mil) thickness.Even if being painted equably deposition herein to spread all over
First surface 214, absorbing coating 230 can have the different thickness for spreading all over first surface 214, such as thick close to inner radius
Degree is thicker and then toward towards the direction of outer diameter becoming relatively thin absorbing coating 230.In other embodiments, absorbability applies
Layer 230 is relatively thin in the inner radius close to first surface 214 and then toward becoming thicker towards the direction of outer diameter.
In operation, including the processing chamber housing 100 of substrate 108 and pedestal 106 will be heated using light fixture 220 with
Reach optimum temperature.When this is executed with a cyclic program, processing chamber housing 100 must relatively quickly cool down and use
In accurate heating and cooling.The component (including pedestal 106 and substrate 108) of processing chamber housing 100 will be based on temperature and discharge spoke
It penetrates.The some of them (such as radiation with 4 microns or longer of wavelength) of these radiation will be inhaled by substructure 114
It receives.Radiation less than 4 microns can be subsequently passed through substructure 114 and absorbability coating 230 is received.By this means, inhale
The property received coating 230 can increase the cooling in processing chamber housing 100.
It is not wishing to be bound by theory, it is believed that absorbing coating 230 can increase the cooling in processing chamber housing 100.Work as processing
The component of chamber 100 is heated, they radiate release.These radiation (as described above)s can be by the other component institute of processing chamber housing 100
It absorbs.These radiation 100 can also penetrate through substructure 114 and the lamp cap 145 that arrives.Reflecting surface on lamp cap 145 can will be from processing
The radiation reflective that chamber 100 is received return and by substructure 114, and the radiation will be absorbed by substructure 114 or
It is received by the other component of processing chamber housing 100.By using absorbing coating 230, non-reflective background, radiation will not return
Processing chamber housing 100 and processing chamber housing 100 can be cooled down efficiently.
One or more cooling systems can be used to be cooled down for lamp cap 145, such as be transmitted through the liquid in channel 149
It is cooling.In one embodiment, lamp cap 145 can maintain 250 degrees Celsius or lower, such as less than 200 degrees Celsius.Lamp cap
Temperature to maintain heat from processing chamber housing 100 be displaced through substructure 114 for be important.
In another embodiment, reflector 122 can have the suction being formed at least part of reflecting surface 123
The property received coating (not shown).It is believed that the radiation from light fixture 220 may pass through substrate 108 and substrate support 106, thus it is anti-
Emitter 122 and leucoscope 118 are received.Radiation from light fixture 220 is therefore in the high temperature carried out to substrate 108
It measures to read and can generate mistake, also referred to as noise.By being deposited at least part of the reflecting surface 123 of reflector 122
Absorbing coating can be absorbed rather than be reflected by the radiation from light fixture 220 that reflector 122 is received.It is reflecting
The absorbability of the radiation of device 122 is it is believed that the noise that leucoscope 118 is received can be reduced.Furthermore it is formed on reflector 122
Absorbing coating enhanced rad consume and will help to realize cooling faster.
Although foregoing disclosure is related to embodiments of the present invention, can be designed in the base region without departing from the present invention
Other and the further embodiment of the present invention, and the scope of the present invention is determined by following claims.
Claims (20)
1. a kind of processing chamber housing, including：
First structure；
Second structure；
The first structure is connected to second structure by base ring, the base ring；
Substrate support, the substrate support are set between the first structure and second structure；
Source structure is radiated, the radiation source structure is positioned adjacent to second structure and has be formed in the radiation source
One or more radiation source positions in structure, the radiation source structure includes the first table for being adjacent to second structure
Face, wherein the first surface include absorbing coating, and second structure setting in the radiation source structure with it is described
Between substrate support；And
One or more radiation sources, each radiation source are located at one of described radiation source positions.
2. processing chamber housing as described in claim 1, wherein the absorbing coating is carbon black coating.
3. processing chamber housing as described in claim 1, wherein each of the radiation source is light bulb, the light bulb includes white heat
Filament, the light bulb containing radiating gas or solid state radiation sources.
4. processing chamber housing as described in claim 1, wherein the radiation source structure includes copper or aluminium, and by water cooling.
5. processing chamber housing as described in claim 1, wherein the radiation source structure has adhesiveness enhancing construction.
6. processing chamber housing as described in claim 1, further includes：
There is reflecting surface, the reflecting surface to be set on the first structure for reflector, the reflector, wherein described
There is reflector absorbing coating, the absorbing coating to be set at least part of top of the reflecting surface.
7. a kind of processing chamber housing for heating the substrate, including：
Substrate support, the substrate support are set within the processing chamber housing for supporting substrate, the substrate branch
Support seat tool has the first support surface for contact substrate and with the second support surface for being right against first support surface；
Second structure, second structure setting is at being adjacent to second support surface；
Radiate source structure, the radiation source structure positioning is at being adjacent to second structure and with being formed in the radiation source knot
One or more radiation source positions in structure, the radiation source structure includes the first surface for being adjacent to second structure,
The first surface includes absorbing coating, and second structure setting is supported in the radiation source structure and the substrate
Between seat；
Bulb assembly, the bulb assembly include radiation generating source；
First structure, the first structure are right against second structure；And
Base ring, the base ring are set between the first structure and second structure, wherein second structure, institute
It states base ring and the first structure defines the processing region of the processing chamber housing in general manner.
8. processing chamber housing as claimed in claim 7, wherein the combination of the first structure, second structure or said two devices
For cheese.
9. processing chamber housing as claimed in claim 7, wherein each of the radiation generating source is light bulb, the light bulb includes
Incandescent filament, the light bulb containing radiating gas or solid state radiation sources.
10. processing chamber housing as claimed in claim 7, wherein the radiation source structure includes copper or aluminium, and by water cooling.
11. processing chamber housing as claimed in claim 7, wherein the radiation source structure has adhesiveness enhancing construction.
12. processing chamber housing as claimed in claim 11, wherein adhesiveness enhancing is configured to subbing.
13. processing chamber housing as claimed in claim 7 further includes reflector, the reflector has reflecting surface, described
Reflecting surface is disposed adjacent to the first structure, wherein the reflector has absorbing coating, the absorbing coating
It is set at least part of top of the reflecting surface.
14. a kind of processing chamber housing for heating the substrate, including：
Substrate support, the substrate support are set within the processing chamber housing for supporting substrate, the substrate branch
Support seat tool has the first support surface for contact substrate and with the second support surface for being right against first support surface；
Second structure, second structure setting at be adjacent to second support surface and have cheese；
Radiate source structure, the radiation source structure positioning is at being adjacent to second structure and with being formed in the radiation source knot
One or more radiation source positions in structure, the radiation source structure includes the first surface for being adjacent to second structure,
The first surface includes cheese and includes：
Adhesiveness enhancing construction, adhesiveness enhancing construction be located on the first surface or within；And
Carbon black absorbing coating, the carbon black absorbing coating are formed in the adhesiveness enhancing structurally；
Bulb assembly, the bulb assembly include radiation generating source；
First structure, the first structure are right against second structure；And
Base ring, the base ring are set between the first structure and second structure, second structure, the base
Seat ring and the first structure define the processing region of the processing chamber housing in general manner.
15. processing chamber housing as claimed in claim 14, wherein each of the radiation generating source is light bulb, the light bulb packet
Light bulb containing incandescent filament, containing radiating gas or solid state radiation sources.
16. a kind of lamp cap, including：
Source structure is radiated, the radiation source structure includes the first surface for having absorbing coating, wherein the radiation source structure
With the first thickness positioned at outer diameter and the second thickness positioned at internal diameter, and the first thickness is more than second thickness；And
One or more radiation source positions, one or more radiation source positions are formed in the radiation source structure.
17. lamp cap as claimed in claim 16, wherein the radiation source structure is by water cooling.
18. lamp cap as claimed in claim 16, wherein the radiation source structure includes aluminium or copper.
19. lamp cap as claimed in claim 16, wherein the radiation source structure has adhesiveness enhancing construction, and it is described viscous
Attached property enhancing is configured to subbing.
20. lamp cap as claimed in claim 16, wherein the radiation source structure is conical by its shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710618682.6A CN107658241A (en) | 2013-04-26 | 2014-04-21 | Absorbability lamp holder face |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361876444P | 2013-04-26 | 2013-04-26 | |
| US61/876,444 | 2013-04-26 | ||
| PCT/US2014/034828 WO2014176174A1 (en) | 2013-04-26 | 2014-04-21 | Absorbing lamphead face |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710618682.6A Division CN107658241A (en) | 2013-04-26 | 2014-04-21 | Absorbability lamp holder face |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105143505A CN105143505A (en) | 2015-12-09 |
| CN105143505B true CN105143505B (en) | 2018-08-07 |
Family
ID=51792319
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201480023727.XA Expired - Fee Related CN105143505B (en) | 2013-04-26 | 2014-04-21 | Absorbability lamp cap face |
| CN201710618682.6A Pending CN107658241A (en) | 2013-04-26 | 2014-04-21 | Absorbability lamp holder face |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710618682.6A Pending CN107658241A (en) | 2013-04-26 | 2014-04-21 | Absorbability lamp holder face |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR20160003099A (en) |
| CN (2) | CN105143505B (en) |
| WO (1) | WO2014176174A1 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IT201600099783A1 (en) * | 2016-10-05 | 2018-04-05 | Lpe Spa | REACTOR FOR EPITAXIAL DEPOSITION WITH EXTERIOR REFLECTOR OF THE REACTION CHAMBER AND METHOD OF COOLING A SUSCECTOR AND SUBSTRATES |
| CN111725114B (en) * | 2020-06-30 | 2023-07-14 | 北京北方华创微电子装备有限公司 | Position correction device for heating lamp |
| US20220322492A1 (en) * | 2021-04-06 | 2022-10-06 | Applied Materials, Inc. | Epitaxial deposition chamber |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IT1271233B (en) * | 1994-09-30 | 1997-05-27 | Lpe | EPITAXIAL REACTOR EQUIPPED WITH FLAT DISCOID SUSCEPECTOR AND HAVING GAS FLOW PARALLEL TO THE SUBSTRATES |
| US6108490A (en) * | 1996-07-11 | 2000-08-22 | Cvc, Inc. | Multizone illuminator for rapid thermal processing with improved spatial resolution |
| US5937142A (en) * | 1996-07-11 | 1999-08-10 | Cvc Products, Inc. | Multi-zone illuminator for rapid thermal processing |
| DE10222879A1 (en) * | 2001-05-23 | 2005-03-17 | Mattson Thermal Products Gmbh | Measurement of low wafer temperatures |
| US20030020027A1 (en) * | 2001-07-25 | 2003-01-30 | Nordson Corporation | Apparatus for infrared reduction in ultraviolet radiation generators |
| US7691204B2 (en) * | 2005-09-30 | 2010-04-06 | Applied Materials, Inc. | Film formation apparatus and methods including temperature and emissivity/pattern compensation |
| US8150242B2 (en) * | 2008-10-31 | 2012-04-03 | Applied Materials, Inc. | Use of infrared camera for real-time temperature monitoring and control |
| US9758871B2 (en) * | 2008-12-10 | 2017-09-12 | Sumco Techxiv Corporation | Method and apparatus for manufacturing epitaxial silicon wafer |
| US20120237695A1 (en) * | 2009-12-23 | 2012-09-20 | 2-Pye Solar, LLC | Method and apparatus for depositing a thin film |
-
2014
- 2014-04-21 CN CN201480023727.XA patent/CN105143505B/en not_active Expired - Fee Related
- 2014-04-21 WO PCT/US2014/034828 patent/WO2014176174A1/en active Application Filing
- 2014-04-21 CN CN201710618682.6A patent/CN107658241A/en active Pending
- 2014-04-21 KR KR1020157033583A patent/KR20160003099A/en not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| CN107658241A (en) | 2018-02-02 |
| CN105143505A (en) | 2015-12-09 |
| KR20160003099A (en) | 2016-01-08 |
| WO2014176174A1 (en) | 2014-10-30 |
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Granted publication date: 20180807 Termination date: 20200421 |