CN107658137A - A kind of electrode structure of DSSC - Google Patents

A kind of electrode structure of DSSC Download PDF

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Publication number
CN107658137A
CN107658137A CN201710962538.4A CN201710962538A CN107658137A CN 107658137 A CN107658137 A CN 107658137A CN 201710962538 A CN201710962538 A CN 201710962538A CN 107658137 A CN107658137 A CN 107658137A
Authority
CN
China
Prior art keywords
bottom plate
holes
electrode
dssc
semiconductor film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
CN201710962538.4A
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Chinese (zh)
Inventor
汤宝田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nantong Jinyang Solar Energy Technology Co Ltd
Original Assignee
Nantong Jinyang Solar Energy Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nantong Jinyang Solar Energy Technology Co Ltd filed Critical Nantong Jinyang Solar Energy Technology Co Ltd
Priority to CN201710962538.4A priority Critical patent/CN107658137A/en
Publication of CN107658137A publication Critical patent/CN107658137A/en
Withdrawn legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G9/00Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20Light-sensitive devices
    • H01G9/2027Light-sensitive devices comprising an oxide semiconductor electrode
    • H01G9/2031Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/542Dye sensitized solar cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Abstract

The present invention relates to DSSC technical field, specifically disclose a kind of electrode structure of DSSC, including the visual bottom plate covered with conductive component, semiconductor film or catalyst assembly with holes are set on bottom plate, and the semiconductor film with holes is impregnated with light-sensitive coloring agent, highly conductive component is additionally provided with bottom plate, it is characterized in that, the highly conductive component is blocking by semiconductor film with holes or catalyst assembly segmentation, and block is connected with block, annularly.The structure of the present invention improves the effective area of battery, and simplifies and prepare battery step, improves production efficiency.

Description

A kind of electrode structure of DSSC
Technical field
The invention belongs to DSSC technical field, and in particular to a kind of DSSC Electrode structure, especially a kind of structure of large-area dye-sensitized solar battery electrode.
Background technology
DSSC, closed because its is simple in construction, cost is cheap and photoelectric transformation efficiency is higher Note.The dye sensitization solar cell module of prior art generally comprises following major part:Light-sensitive coloring agent is adsorbed The first electrode of nano porous semiconductor film and electrically conducting transparent bottom plate composition, in contrast and the containing Catalytic Layer that is spaced apart The electrolyte and encapsulant filled between two electrodes, two electrodes.A transparency electrode is comprised at least in two electrodes to ensure Absorption of the battery to light, it is electro-conductive glass or flexible and transparent conductive part usually using transparent conductivity bottom plate.Electrolyte Organic solution usually containing iodine electricity pair.
At present, the transparent conductivity bottom plate of commercialization, tin-doped indium oxide (ITO) or fluorine doped tin oxide have generally been coated Etc. (FTO) glass film plates of electrically conducting transparent part or other flexible clear materials, ITO or FTO layers have good corrosion resistance, It can be prepared by sputtering method or chemical vapour deposition technique (CVD).But ITO or FTO resistivity is 10-4-10-3 Ω cm or so, it is 100 times or so of the metallic resistance rate such as silver, copper.Therefore, commercially available electrically conducting transparent substrate has higher electricity Resistance, when for some electrooptical devices (such as DSSC), the particularly battery device of large area When, photoelectric transformation efficiency declines obvious.It is contemplated that reduced by improving the thickness of transparency conducting layer (ITO or FTO etc.) The resistance of electrically conducting transparent bottom plate.But the increase of conductive layer thickness can cause its absorptivity to light to increase, and can equally reduce too The photoelectric transformation efficiency of positive energy battery.
In order to reduce the resistance of used by dye sensitization solar battery conductive soleplate, the method for generally use is in conduction at present The gate electrode of high conductivity is set on bottom plate, and used material is generally silver.Such as Chinese invention patent ZL200410014455.5 and ZL200410014456.X, it is by gate electrode that some monocells are separated, it is prepared for respectively Large area internal series-connection and internal parallel battery.Same method is in ReproducibleManufacturingofDye- SensitizedSolarCellsonaSemi-automatedBaseline(M.Deng Prog.Photovolt: Res.Appl, 2003, volume 11,207-220 pages) also have been reported that.
The content of the invention
The present invention proposes a kind of new electrode structure, using the structure large-area dye-sensitized solar battery not only The resistance of conductive soleplate is effectively reduced, and improves the effective area of battery, so as to more effectively improve this kind of light The photoelectric conversion result of power conversion device.
To achieve the above object, the present invention adopts the following technical scheme that:
A kind of electrode structure of DSSC, including the visual bottom plate covered with conductive component, set on bottom plate Semiconductor film or catalyst assembly with holes, the semiconductor film (such as titanium dioxide) with holes are impregnated with light-sensitive coloring agent, gone back on bottom plate Highly conductive component is provided with, it is characterized in that, semiconductor film with holes or catalyst assembly are split blocking, block by the highly conductive component It is connected with block, annularly.
Preferably:The semiconductor film with holes or catalyst assembly are blocking by highly conductive segmentation, in serpentine ring Shape.
In order to avoid gate electrode contacts with each other and causes battery short circuit or by electrolytic corrosion, on the highly conductive component Successively covered with insulation assembly, partition assembly.Or it is just coated with sealant on the highly conductive component.
It is as follows using the electrode structure of the present invention, the battery modular structure of preparation:
Between a kind of dye sensitization solar cell module, including first electrode, second electrode, first electrode and second electrode are relative Every setting, peripheral sealing forms the cavity of closing, electrolyte is filled with the cavity, first electrode working region side is set Semiconductor film with holes is put, the semiconductor film with holes is impregnated with light-sensitive coloring agent, and second electrode working region side sets catalyst Component;It is characterized in that include highly conductive component in the first electrode and second electrode, by semiconductor film with holes or catalyst group Part segmentation is blocking, and block connects with block, annularly;The closed cavity is interconnected.
Battery module of the present invention is subjected to connection in series-parallel, extensive series/parallel DSSC can be obtained.
Compared with prior art, the advantage of the invention is that:
1) under same air-proof condition, electrode structure of the invention improves the effective area of battery, can improve putting for battery Electrical property.
2) battery module of electrode structure of the invention, electrolyte filling can be completed once, efficiently solve multiple lists Battery irrigates the production efficiency problem that electrolyte is brought respectively.
Embodiment
Embodiment 1:Electrode structure
A kind of electrode structure of DSSC, including the visual bottom plate 11 covered with conductive component, on bottom plate 11 Nano titanium dioxide film or catalyst assembly 13 are set, highly conductive component 12 is additionally provided with bottom plate 11, highly conductive component 12 will Nano titanium dioxide film or catalyst assembly 13 are split blocking, and block is connected with block, in serpentine ring-type.
Embodiment 2:The structure of battery module
The present embodiment is the battery module being made up of a pair of electrodes of embodiment 1.
Dye sensitization solar cell module, including first electrode and second electrode, are prepared in electrically conducting transparent bottom plate respectively The nano titanium dioxide film 23 that being prepared on 21, in first electrode has " S " type structure is used to adsorb light-sensitive coloring agent, second electrode system Have the Catalytic Layer 26 of " S " type structure;Gate electrode 25, insulation are prepared in the relevant position of first electrode and second electrode respectively Layer 27 and sealing material layer 22, and by first electrode after together with second electrode sealing, pass through reserved in position small Electrolyte 24 is poured into and sealed by hole, draws electrode at exposed gate electrode wiring point 24.
In the case where meeting insulation and seal request, insulating barrier and sealing only can also be set on an electrode wherein Material layer, another electrode only set gate electrode layer, and when sealing, the sealing material layer being disposed therein on an electrode is same When the gate electrode layer of another electrode is protected.
Embodiment 3:Extensive connection in series-parallel DSSC:
The basic structure and embodiment 2 of battery are identical, between multiple monocells by serial or parallel connection by way of form electricity Gas connects.
The above embodiments of the present invention are the description of the invention, and can not limit the present invention, are wanted with right of the present invention Any change and combination in book suitable implication and scope are asked, is all considered as in the range of claims.

Claims (3)

1. a kind of electrode structure of DSSC, including the visual bottom plate covered with conductive component, set on bottom plate Semiconductor film or catalyst assembly with holes are put, the semiconductor film with holes is impregnated with light-sensitive coloring agent, and being additionally provided with height on bottom plate leads Electrical component, it is characterized in that, the highly conductive component is blocking by semiconductor film with holes or catalyst assembly segmentation, and block is connected with block Connect, annularly.
2. the electrode structure of DSSC according to claim 1, it is characterized in that, the semiconductor with holes Film or catalyst assembly are blocking by highly conductive segmentation, in serpentine ring-type.
3. the electrode structure of DSSC according to claim 2, it is characterized in that, the highly conductive component On successively covered with insulation assembly, partition assembly.
CN201710962538.4A 2017-10-17 2017-10-17 A kind of electrode structure of DSSC Withdrawn CN107658137A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710962538.4A CN107658137A (en) 2017-10-17 2017-10-17 A kind of electrode structure of DSSC

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710962538.4A CN107658137A (en) 2017-10-17 2017-10-17 A kind of electrode structure of DSSC

Publications (1)

Publication Number Publication Date
CN107658137A true CN107658137A (en) 2018-02-02

Family

ID=61118745

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710962538.4A Withdrawn CN107658137A (en) 2017-10-17 2017-10-17 A kind of electrode structure of DSSC

Country Status (1)

Country Link
CN (1) CN107658137A (en)

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Application publication date: 20180202

WW01 Invention patent application withdrawn after publication