CN107655408A - A kind of plane of crystal crudy characterizing method for being used to improve crystal bonding quality - Google Patents
A kind of plane of crystal crudy characterizing method for being used to improve crystal bonding quality Download PDFInfo
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- CN107655408A CN107655408A CN201710883648.1A CN201710883648A CN107655408A CN 107655408 A CN107655408 A CN 107655408A CN 201710883648 A CN201710883648 A CN 201710883648A CN 107655408 A CN107655408 A CN 107655408A
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- crudy
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- 239000013078 crystal Substances 0.000 title claims abstract description 109
- 238000000034 method Methods 0.000 title claims abstract description 27
- 238000012545 processing Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 5
- 230000007812 deficiency Effects 0.000 abstract description 4
- 239000007787 solid Substances 0.000 abstract description 3
- 238000005498 polishing Methods 0.000 description 12
- 238000005259 measurement Methods 0.000 description 7
- 238000001514 detection method Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 239000004568 cement Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 238000005411 Van der Waals force Methods 0.000 description 1
- 238000001994 activation Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
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- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
A kind of plane of crystal crudy characterizing method for being used to improve crystal bonding quality, belongs to laser crystal and technical field of solid laser.Characterizing method proposed by the present invention is by three parameters：Surface smoothness, roughness, microprotrusion spacing constrain plane of crystal crudy jointly, as to improving the vital parameter of crystal bonding quality, overcome the shortcomings of that existing characterizing method lacks to constrain plane of crystal transverse direction microscopic appearance, bonded crystals contact surface is avoided residual clearance occur, crystal bonding quality and yield rate are improved, overcomes the current less deficiency in crystal bonding face.
Description
Technical field
The present invention relates to a kind of plane of crystal crudy characterizing method for being used to improve crystal bonding quality, belong to laser
Crystal and technical field of solid laser.
Background technology
Crystal bonding technology is by homogeneity or heterocrystal material, prepare through crystal (i.e. Surface Machining is handled), cleaning,
Activation process, without using any adhesive substance, under certain conditions directly against integrator, crystal by Van der Waals force, point
Sub- power is fitted, is combined together eventually through atomic force.Crystal bonding technology is ground in novel optical device, novel solid laser
Study carefully aspect to have very important significance.
The first step that crystal is progress crystal bonding, and one of key technology of crystal bonding are prepared, is referred to by grinding
The processing methods such as mill, polishing, make plane of crystal reach certain requirement, prepare crystal using flatness and roughness to characterize at present
Surface topography (document 1, Lee H, Meissner H E, Meissner O R.Adhesive-free bond (AFB) CVD
diamond/sapphire and CVD diamond/YAG crystal composites[C]//Defense and
Security Symposium.International Society for Optics and Photonics,2006:
62160O-62160O-8.).Wherein, geometry waviness of the flatness from macroscopic description plane of crystal；Roughness is anti-from statistics angle
The difference of plane of crystal microfluctuation longitudinal direction height is reflected, is the assembly average of local area measurement area.Existing this crystal
The characterizing method of suface processing quality is a kind of characterizing method of conventional laser plane of crystal crudy.But for crystal
During bonding, because the essence of two panels crystal fitting optical cement process is that elastic deformation and then the mistake closed occur for crystal contact face gap
Journey, the tightness degree of closure is not only relevant with plane of crystal geometry waviness (i.e. flatness) and relief height (i.e. roughness),
It is relevant with the horizontal spacing of plane of crystal microfluctuation.Thus, in order to improve crystal bonding quality, it is necessary to examined when prepared by crystal
Consider the horizontal spacing (being referred to as microprotrusion spacing below) of plane of crystal microfluctuation, microprotrusion spacing is to influence two panels crystal to connect
There is one of key reason of residual clearance in contacting surface.Especially when carrying out big spacing crystal bonding, in order to avoid contact surface goes out
Existing residual clearance, enters row constraint with greater need for the vertical and horizontal microscopic appearance to plane of crystal.It is current using flatness and coarse
Degree characterizes the plane of crystal crudy characterizing method of plane of crystal pattern, lacks the pact to plane of crystal transverse direction microscopic appearance
Beam, limit the further raising of crystal bonding quality and crystal bonding spacing.
The content of the invention
It is an object of the invention to overcome plane of crystal crudy characterizing method in existing bonded crystals preparation process
Deficiency, improve crystal bonding quality and yield rate；The current less limitation in crystal bonding face is overcome, to realize big spacing crystal key
Close and a kind of plane of crystal crudy characterizing method is provided.
A kind of plane of crystal crudy characterizing method for being used to improve crystal bonding quality, it is characterised in that using table
Three surface evenness, roughness, microprotrusion spacing parameters are collectively as the parameter for characterizing plane of crystal crudy；I.e. in crystal
In preparation process, in addition to current conventional surface smoothness, roughness, also using plane of crystal microprotrusion spacing as sign
One new parameter of plane of crystal crudy, three parameters constrain plane of crystal macroscopic view geometry waviness and microcosmic vertical jointly
To, horizontal pattern.
A kind of plane of crystal crudy characterizing method for being used to improve crystal bonding quality proposed by the present invention, its feature
It is：When preparing bonded crystals (including same material bonding and foreign material bonding), using surface smoothness, roughness, micro-
Raised three parameters of spacing as characterize plane of crystal crudy parameter, using three parameters be used as raising crystal bonding matter
The parameter that plane of crystal is processed before the strong conjunction that amount needs to refer to.
The features of the present invention and usefulness：Characterizing method proposed by the present invention constrains plane of crystal jointly by three parameters
Crudy, as to improving the vital parameter of crystal bonding quality, existing characterizing method is overcome to lack to plane of crystal
The deficiency of horizontal microscopic appearance constraint, avoids bonded crystals contact surface from residual clearance occur, improves crystal bonding quality and finished product
Rate, overcome the current less deficiency in crystal bonding face.
Brief description of the drawings
Fig. 1 is Nd in embodiment 1:Testing result of the YAG crystal machined surfaces in contourgraph
Fig. 2 is testing result of the YAG crystal machined surfaces in contourgraph；
Fig. 3 is Nd in embodiment 2:Testing result of the YAG crystal machined surfaces in contourgraph；
Fig. 4 is Nd in embodiment 1:YAG and YAG bonded crystals bonding face transmission electron microscope detection image；
Fig. 5 is Nd in embodiment 2:YAG and YAG bonded crystals bonding face transmission electron microscope detection image；
Embodiment
A kind of crystal preparation characterization method for improving crystal bonding quality proposed by the present invention, is implemented using following manner：
During crystal grinding, polishing (including rough polishing and finishing polish), between measurement plane of crystal flatness, roughness, microprotrusion
Away from three parameters, according to measurement result, adjustment grinding, the technological parameter of polishing, after a period of time is processed, it is repeated again
Above three parameter, adjusting process parameter, the process of processing are measured, until three parameters reach certain standard (standard root
Specifically formulated according to the difference such as crystal difference, bonding technology).
Technical scheme is described in further detail with reference to embodiment, but protection scope of the present invention not office
It is limited to following examples.
Embodiment 1, Nd:YAG and YAG prepares bonded crystals using new characterizing method.
Using grinder, the alkaline special-purpose grinding fluid of 3 μm of particle diameter is equipped with, to Nd:YAG and YAG planes of crystal are ground
Processing.At regular intervals, detection is ground surface smoothness, is such as detected using laser plane interferometer.When being ground
When the height fluctuating on surface is less than λ (λ=632.8nm), rough polishing processing is carried out.
Using polishing machine, the alkaline special-purpose polishing liquid of 1 μm of particle diameter is equipped with, to Nd:YAG and YAG planes of crystal carry out rough polishing
Light is processed.At regular intervals, detection is polished surface smoothness, is such as detected using laser plane interferometer.When being thrown
When the height fluctuating of optical surface is less than λ/10 (λ=632.8nm), finishing polish processing is carried out.
Using polishing machine, the alkaline special-purpose polishing liquid of 0.5 μm of particle diameter is equipped with, to Nd:YAG and YAG planes of crystal carry out essence
Polishing.At regular intervals, detection is polished surface smoothness, is such as detected using laser plane interferometer；Detection
Surface roughness, microprotrusion spacing are polished, is such as detected using step instrument, contourgraph.According to measurement result, adjusting process
Parameter.
Measurement above three parameter, adjusting process parameter, the process of processing, finally, Nd is repeated:YAG crystal is added
Work face surface smoothness is less than λ/10 (λ=632.8nm), roughness metric 0.332nm, and microprotrusion spacing average value is
0.14mm, as shown in Figure 1.YAG crystal machined surfaces surface smoothness is less than λ/10 (λ=632.8nm), and roughness metric is
0.721nm, microprotrusion spacing average value are 0.13mm, as shown in Figure 2.
Embodiment 2, Nd:YAG and YAG prepares bonding using the characterizing method of conventional measurement surface flatness, roughness
Crystal.
Nd is prepared using conventional method:YAG crystal, crystal preparation technology and polishing grinding equipment are in the same manner as in Example 1,
Simply in process, measurement surface flatness, roughness.Finally, Nd:YAG machined surfaces surface smoothness is less than λ/10
(λ=632.8nm), roughness metric 0.303nm, as shown in Figure 3.Although as can be seen that machined surface roughness metric
Less than Nd in embodiment 1:YAG, but microprotrusion spacing is significantly greater than Nd in embodiment 1:YAG, it is measured, in embodiment 2
Nd:YAG microprotrusion spacing average value is 0.17mm.
The Nd of completion will be prepared in embodiment 1, embodiment 2:YAG crystal of the YAG respectively with being prepared in embodiment 1 enters line unit
Close, after over cleaning, optical cement, be put into vacuum hotpressing stove and be heat-treated, complete bonding.The Nd prepared after bonding in embodiment 1:
YAG is with YAG crystal bondings face images of transmissive electron microscope as shown in figure 4, the Nd prepared in embodiment 2:YAG and YAG crystal bondings face
During images of transmissive electron microscope is as shown in Figure 5.Nd prepared by embodiment 1:The Nd that YAG is prepared with YAG bonded crystals with embodiment 2:YAG
Compared with YAG bonded crystals, bonding face is smooth, and bonding face both sides lattice arrangement is regular, close, shows be bonded Nd:YAG-
YAG has higher bonding quality.
Claims (3)
1. a kind of plane of crystal crudy characterizing method for being used to improve crystal bonding quality, it is characterised in that using surface
Three flatness, roughness, microprotrusion spacing parameters are collectively as the parameter for characterizing plane of crystal crudy；I.e. in crystal system
It is also that plane of crystal microprotrusion spacing is brilliant as characterizing in addition to current conventional surface smoothness, roughness during standby
One new parameter of body suface processing quality, three parameters constrain jointly plane of crystal macroscopic view geometry waviness and it is microcosmic longitudinal direction,
Horizontal pattern.
2. it is used to improve the plane of crystal crudy characterizing method of crystal bonding quality according to a kind of described in claim 1,
Characterized in that, when preparing bonded crystals, it is brilliant as characterizing using three surface smoothness, roughness, microprotrusion spacing parameters
The parameter of body suface processing quality, using three parameters as plane of crystal before the strong conjunction needed to refer to for raising crystal bonding quality
The parameter of processing.
3. it is used to improve the plane of crystal crudy characterizing method of crystal bonding quality according to a kind of described in claim 1,
Characterized in that, crystal bonding includes, same material is bonded or foreign material is bonded.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710883648.1A CN107655408A (en) | 2017-09-26 | 2017-09-26 | A kind of plane of crystal crudy characterizing method for being used to improve crystal bonding quality |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111952210A (en) * | 2019-05-15 | 2020-11-17 | 上海新昇半导体科技有限公司 | Silicon wafer attaching bubble quantity evaluation method and image sensor structure preparation method |
| CN113131320A (en) * | 2021-04-06 | 2021-07-16 | 北京工业大学 | Erbium glass planar waveguide passive Q-switched laser |
| CN113624452A (en) * | 2021-07-14 | 2021-11-09 | 哈尔滨工程大学 | Light path alignment method for detecting end face bonding surface of laser lath |
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| CN1254441A (en) * | 1997-04-30 | 2000-05-24 | 美国3M公司 | Method of planarizing upper surface of semiconductor wafer |
| CN106252206A (en) * | 2016-08-30 | 2016-12-21 | 成都晶九科技有限公司 | Nd:YAG laser crystal large area bonding technology |
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2017
- 2017-09-26 CN CN201710883648.1A patent/CN107655408A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1254441A (en) * | 1997-04-30 | 2000-05-24 | 美国3M公司 | Method of planarizing upper surface of semiconductor wafer |
| CN106252206A (en) * | 2016-08-30 | 2016-12-21 | 成都晶九科技有限公司 | Nd:YAG laser crystal large area bonding technology |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111952210A (en) * | 2019-05-15 | 2020-11-17 | 上海新昇半导体科技有限公司 | Silicon wafer attaching bubble quantity evaluation method and image sensor structure preparation method |
| CN113131320A (en) * | 2021-04-06 | 2021-07-16 | 北京工业大学 | Erbium glass planar waveguide passive Q-switched laser |
| CN113624452A (en) * | 2021-07-14 | 2021-11-09 | 哈尔滨工程大学 | Light path alignment method for detecting end face bonding surface of laser lath |
| CN113624452B (en) * | 2021-07-14 | 2022-09-02 | 哈尔滨工程大学 | Light path alignment method for detecting end face bonding surface of laser lath |
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