CN107653446A - A kind of graphene growth method for improving graphene nucleation density - Google Patents

A kind of graphene growth method for improving graphene nucleation density Download PDF

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Publication number
CN107653446A
CN107653446A CN201610591642.2A CN201610591642A CN107653446A CN 107653446 A CN107653446 A CN 107653446A CN 201610591642 A CN201610591642 A CN 201610591642A CN 107653446 A CN107653446 A CN 107653446A
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China
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graphene
nucleation density
growth method
improving
substrates
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Inventor
狄增峰
马骏
张苗
王刚
贾鹏飞
汪子文
王曦
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Shanghai Institute of Microsystem and Information Technology of CAS
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Shanghai Institute of Microsystem and Information Technology of CAS
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only

Abstract

The present invention provides a kind of graphene growth method for improving graphene nucleation density, comprises the following steps：S1：One Ge substrates are provided, ion implanting is carried out to the Ge substrates；S2：Annealed, make the injection ion in the Ge substrates is at least part of to precipitate into the Ge substrate surfaces, to increase the graphene nucleating point of the Ge substrate surfaces；S3：Carbon source is provided, grows to obtain graphene in the Ge substrate surfaces.The present invention provides more nucleating points for growth of the graphene on Ge surfaces, so as to improve the nucleation density of graphene, greatly add the speed of growth of graphene, the production cost of graphene is advantageously reduced, and the nucleation density of graphene can be modulated with Implantation Energy by adjusting the implantation dosage of ion.

Description

A kind of graphene growth method for improving graphene nucleation density
Technical field
The invention belongs to semiconductor and carbon material preparation field, is related to a kind of graphene life for improving graphene nucleation density Long method.
Background technology
Graphite is successfully obtained first using mechanical stripping method from two scientists of Univ Manchester UK in 2004 Alkene, and after obtaining Nobel Prize in physics in 2010 with this, this special hexagonal lattice two-dimensional material of graphene becomes For the focus of world's scientific research circle.Graphene is a kind of two-dimensional material formed by single layer of carbon atom according to honeycomb arrangement, Due to its special tectonic, graphene shows excellent property in fields such as mechanics, calorifics and electricity, especially in electricity side The performance in face is the most prominent, graphene is showed substituted for silicon the features such as the electrical conductivity of its superelevation and ultralow resistivity Trend as primary electron material.
The method for preparing graphene at present mainly has micromechanics stripping, SiC sublimed methods, chemical vapor deposition and graphite oxide Reducing process.Micromechanics stripping method can prepare the graphene of high quality, but the graphene area that at present prepared by the method is less than 1mm × 1mm, it is only used for Basic Experiment Study；Graphene prepared by SiC sublimed methods is influenceed very big, number of plies inequality by substrate One, substrate transfer can not be carried out.Although CVD method can prepare the graphene film of large area, and be easy to substrate Transfer, but the graphene growth speed that the method obtains is very slow, it means that industrial production large-area high-quality graphite The cost of alkene will greatly increase, thus it is graphene industrialization road to improve graphene growth speed to reduce graphene production cost The key on road.
Therefore, a kind of graphene growth method for improving graphene nucleation density how is provided, to increase the life of graphene Long speed, the production cost of graphene is reduced, quickly to promote extensive use of the graphene in semi-conductor industry circle, turn into this An art personnel important technological problems urgently to be resolved hurrily.
The content of the invention
In view of the above the shortcomings that prior art, it is an object of the invention to provide one kind to improve graphene nucleation density Graphene growth method, for solve in the prior art graphene growth speed it is very slow, cause industrial production large area The problem of cost of high-quality graphene greatly increases.
In order to achieve the above objects and other related objects, the present invention provides a kind of graphene for improving graphene nucleation density Growing method, comprise the following steps：
S1：One Ge substrates are provided, ion implanting is carried out to the Ge substrates；
S2：Annealed, make the injection ion in the Ge substrates is at least part of to precipitate into the Ge substrate surfaces, To increase the graphene nucleating point of the Ge substrate surfaces；
S3：Carbon source is provided, grows to obtain graphene in the Ge substrate surfaces.
Alternatively, in the step S1, using one or more to Ge substrates progress ion in Si, Ge, C, H Injection.
Alternatively, in the step S1, ion implanting depth is 100-200nm.
Alternatively, in the step S1, ion implantation energy scope is 10-20KeV, and ion implantation dosage scope is 1E14-5E15atom/cm2。
Alternatively, in the step S2, annealing region is 600-1200 DEG C, and annealing atmosphere includes hydrogen and inertia Gas, annealing time 5-150min.
Alternatively, in the step S3, graphene is grown using chemical vapour deposition technique.
Alternatively, in the step S3, the carbon source includes one in methane, ethene, acetylene, benzene, PMMA and graphite Kind is a variety of.
Alternatively, in the step S3, graphene growth temperature range is 900-940 DEG C, and growth atmosphere includes hydrogen And inert gas.
Alternatively, in the step S3, when growth area is 1cm2Graphene when, growth time 80-180min.
Alternatively, the graphene is single-layer graphene.
As described above, the graphene growth method of the raising graphene nucleation density of the present invention, has the advantages that： The present invention injects a small amount of Si (or Ge, C, H) to Ge substrates shallow-layer using ion implanting, and shallow-layer injects after annealing Si precipitate into surface.Carbon source is passed through afterwards carries out graphene growth, wherein, the Si (or Ge, C, H) for precipitateing into surface is graphite Growth of the alkene on Ge surfaces provides more nucleating points, so as to improve the nucleation density of graphene, greatly adds graphite The speed of growth of alkene, reduce the production cost of graphene.The present invention can be by adjusting the implantation dosage of ion with injecting energy Measure to modulate the nucleation density of graphene.
Brief description of the drawings
Fig. 1 is shown as the process chart of the graphene growth method of the raising graphene nucleation density of the present invention.
The signal for the germanium substrate that the graphene growth method that Fig. 2 is shown as the raising graphene nucleation density of the present invention provides Figure.
The graphene growth method that Fig. 3 is shown as the raising graphene nucleation density of the present invention carries out ion note to Ge substrates The schematic diagram entered.
The graphene growth method that Fig. 4 is shown as the raising graphene nucleation density of the present invention is annealed, and makes the Ge At least part of schematic diagram for precipitateing into the Ge substrate surfaces of injection ion in substrate.
The graphene growth method that Fig. 5 is shown as the raising graphene nucleation density of the present invention provides carbon source, in the Ge Substrate surface grows to obtain the schematic diagram of graphene.
The atomic force that Fig. 6 is shown as the Ge substrate surfaces growth graphene under different growth times, different implantation dosages shows Micro mirror characterization result comparison diagram.
Fig. 7 is shown as the Raman characterization result comparison diagram of the Ge substrate surfaces growth graphene under different implantation dosages.
Component label instructions
S1~S3 steps
1 Ge substrates
2 injection ions
3 graphenes
Embodiment
Illustrate embodiments of the present invention below by way of specific instantiation, those skilled in the art can be by this specification Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through specific realities different in addition The mode of applying is embodied or practiced, the various details in this specification can also be based on different viewpoints with application, without departing from Various modifications or alterations are carried out under the spirit of the present invention.
Fig. 1 is referred to Fig. 7.It should be noted that the diagram provided in the present embodiment only illustrates this in a schematic way The basic conception of invention, the component relevant with the present invention is only shown in schema then rather than according to package count during actual implement Mesh, shape and size are drawn, and kenel, quantity and the ratio of each component can be a kind of random change during its actual implementation, and its Assembly layout kenel may also be increasingly complex.
The present invention provides a kind of graphene growth method for improving graphene nucleation density, referring to Fig. 1, being shown as the party The process chart of method, comprises the following steps：
S1：One Ge substrates are provided, ion implanting is carried out to the Ge substrates；
S2：Annealed, make the injection ion in the Ge substrates is at least part of to precipitate into the Ge substrate surfaces, To increase the graphene nucleating point of the Ge substrate surfaces；
S3：Carbon source is provided, grows to obtain graphene in the Ge substrate surfaces.
Referring initially to Fig. 2 and Fig. 3, step S1 is performed：One Ge substrates 1 are provided, ion note is carried out to the Ge substrates 1 Enter.
As shown in Fig. 2 being shown as the schematic diagram of the Ge substrates 1, each of which white ball represents a Ge atom.
As shown in figure 3, being shown as carrying out Ge substrates the schematic diagram of ion implanting, each of which black ball represents one Individual injection ion 2.
Specifically, using one or more vertical or tilt and carry out ion from the surface of Ge substrates 1 in Si, Ge, C, H Injection.In the present embodiment, it is preferred to use Si is as injection ion.
Specifically, the injection depth of ion implanting to control as far as possible close to surface shallow-layer Ge, after being on the one hand advantageous to The precipitation of ion is injected in continuous annealing process, on the other hand can reduce the destruction to Ge substrates 1.Because it is deeper to inject depth, Corresponding Implantation Energy is bigger, and the damage to Ge substrates is also bigger, can influence the performance of the semiconductor devices based on Ge substrates.
As an example, ion implanting is deep-controlled in 100-200nm, preferably 100-120nm；Ion implantation energy scope Control is in 10-20KeV.Herein, after ion implanting depth refers to ion implanting, ion distribution peak value layer and the Ge substrate surfaces The distance between.
In addition, in terms of dosage choice, it is impossible to excessive ion is injected, in order to avoid Ge substrate surface topographies are caused to break greatly very much It is bad.As an example, ion implantation dosage control is in 1E14-5E15atom/cm2。
Then referring to Fig. 4, performing step S2：Annealed, make the injection ion 2 at least one in the Ge substrates 1 Part precipitate into the surface of Ge substrates 1, to increase the graphene nucleating point on the surface of Ge substrates 1.
The principle of present invention increase graphene nucleating point is as follows：In the step S1, injecting a small amount of Si plasmas can The defects of to increase Ge substrate surfaces density, in the annealing process of the step S2 separate out to Ge substrate surfaces injection ion Meeting further increases the defects of Ge substrate surfaces density.And graphene when Ge substrate surfaces grow can preferentially fault location into Core, the Ge substrate surface defects caused by ion implanting and injection elemental release, that is, form graphene nucleating point.
Ge substrate interiors caused by the annealing of this step can also further repair the ion implanting in step S1 are damaged.I.e. The present invention will not destroy Ge substrate interior lattices while Ge substrate surface defect concentrations are increased.
As an example, annealing region is 600-1200 DEG C in this step, annealing atmosphere includes hydrogen and inert gas, Annealing time is 5-150min.In the present embodiment, annealing temperature is preferably 900 DEG C, and inert gas uses argon gas, and gas flow is 180-240sccm, hydrogen gas flow are 20sccm, soaking time 30min.
Again referring to Fig. 5, performing step S3：Carbon source is provided, graphene 3 is obtained in the superficial growth of Ge substrates 1.
Specifically, graphene is grown using chemical vapour deposition technique.The chemical vapour deposition technique includes but is not limited to heat Chemical vapour deposition technique, Low Pressure Chemical Vapor Deposition or plasma reinforced chemical vapour deposition method.The carbon source include methane, One or more in ethene, acetylene, benzene, PMMA and graphite.
As an example, using tube furnace as the growth chamber, graphene growth temperature range is 900-940 DEG C, growth Atmosphere includes hydrogen and inert gas.In the present embodiment, using 1cm × 1cm Ge substrates, the first using gas flow as 1sccm For alkane as carbon source, hydrogen gas flow is 20sccm, and inert gas uses argon gas, gas flow 180-240sccm, during growth Between be 80-180min, growth obtain single-layer graphene.
Referring to Fig. 6, it is shown as the original of the Ge substrate surfaces growth graphene under different growth times, different implantation dosages Sub- force microscope (AFM) characterizes comparison diagram.
Specifically, when graphene is characterized with AFM, if situation about not covering with, then ellipticity crystal grain is then graphene； If in the case of covering with, it is then to show to cover with traditional thread binding fold occur.
X-axis represents growth time (120min~180min) in Fig. 6, y-axis represent injection dosage (0,1E14, 5E14), unit atom/cm2.It can be found that not ion implanted Ge substrates are as the passage of growth time is in 180min Just there is fold (Ge Substrate Areas are by taking 1cm × 1cm as an example), represent 180min and just cover with；And inject the sample of 1E14 dosage Product have just covered with graphene in 150min, and 5E14 can also cover with 160min.In addition to being compared under same time point It can see, by taking 140min this node as an example, the sample without injection is no matter in number of dies or graphene coverage rate all Much smaller than 1E14 and the sample of two dosage of 5E14.
Referring to Fig. 7, the Raman (Raman) for being shown as the Ge substrate surfaces growth graphene under different implantation dosages characterizes Comparative result figure, graphene growth time are 150min.It can be found that the sample of sample and 5E14 without injection is due to D The presence at peak shows not yet to cover with graphene, and the sample of 1E14 dosage has shown that graphene has grown completely without D peaks Sample, and be the graphene of a high quality.Wherein, D peaks are the Raman defects peaks of graphene, and we are often judged with this Whether graphene covers with and how is graphene quality.
It can be seen that the graphene growth method of raising graphene nucleation density of the invention can greatly increase graphene The speed of growth, and the nucleation density of graphene can be modulated with Implantation Energy by adjusting the implantation dosage of ion.
In summary, the graphene growth method of raising graphene nucleation density of the invention is served as a contrast using ion implanting to Ge Bottom shallow-layer injects a small amount of Si (or Ge, C, H), and the Si that shallow-layer injects after annealing precipitate into surface.Carbon is passed through afterwards Source carries out graphene growth, wherein, the Si (or Ge, C, H) for precipitateing into surface provides for growth of the graphene on Ge surfaces More nucleating points, so as to improve the nucleation density of graphene, the speed of growth of graphene is greatly added, reduces graphite The production cost of alkene.It is close that the present invention can modulate the nucleation of graphene by adjusting the implantation dosage of ion with Implantation Energy Degree.So the present invention effectively overcomes various shortcoming of the prior art and has high industrial utilization.
The above-described embodiments merely illustrate the principles and effects of the present invention, not for the limitation present invention.It is any ripe Know the personage of this technology all can carry out modifications and changes under the spirit and scope without prejudice to the present invention to above-described embodiment.Cause This, those of ordinary skill in the art is complete without departing from disclosed spirit and institute under technological thought such as Into all equivalent modifications or change, should by the present invention claim be covered.

Claims (10)

  1. A kind of 1. graphene growth method for improving graphene nucleation density, it is characterised in that comprise the following steps：
    S1：One Ge substrates are provided, ion implanting is carried out to the Ge substrates；
    S2：Annealed, make the injection ion in the Ge substrates is at least part of to precipitate into the Ge substrate surfaces, to increase Add the graphene nucleating point of the Ge substrate surfaces；
    S3：Carbon source is provided, grows to obtain graphene in the Ge substrate surfaces.
  2. 2. the graphene growth method according to claim 1 for improving graphene nucleation density, it is characterised in that：In described In step S1, using one or more to Ge substrates progress ion implanting in Si, Ge, C, H.
  3. 3. the graphene growth method according to claim 1 for improving graphene nucleation density, it is characterised in that：In described In step S1, ion implanting depth is 100-200nm.
  4. 4. the graphene growth method according to claim 1 for improving graphene nucleation density, it is characterised in that：In described In step S1, ion implantation energy scope is 10-20KeV, and ion implantation dosage scope is 1E14-5E15atom/cm2。
  5. 5. the graphene growth method according to claim 1 for improving graphene nucleation density, it is characterised in that：In described In step S2, annealing region is 600-1200 DEG C, and annealing atmosphere includes hydrogen and inert gas, annealing time 5- 150min。
  6. 6. the graphene growth method according to claim 1 for improving graphene nucleation density, it is characterised in that：In described In step S3, graphene is grown using chemical vapour deposition technique.
  7. 7. the graphene growth method according to claim 1 for improving graphene nucleation density, it is characterised in that：In described In step S3, the carbon source includes the one or more in methane, ethene, acetylene, benzene, PMMA and graphite.
  8. 8. the graphene growth method according to claim 1 for improving graphene nucleation density, it is characterised in that：In described In step S3, graphene growth temperature range is 900-940 DEG C, and growth atmosphere includes hydrogen and inert gas.
  9. 9. the graphene growth method according to claim 1 for improving graphene nucleation density, it is characterised in that：In described In step S3, when growth area is 1cm2Graphene when, growth time 80-180min.
  10. 10. the graphene growth method according to claim 1 for improving graphene nucleation density, it is characterised in that：It is described Graphene is single-layer graphene.
CN201610591642.2A 2016-07-26 2016-07-26 A kind of graphene growth method for improving graphene nucleation density Pending CN107653446A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109824039A (en) * 2019-03-26 2019-05-31 宁波大学 A method of doped graphene is prepared using doped graphene quantum dot as nucleation point

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102963883A (en) * 2012-10-22 2013-03-13 武汉大学 Method for preparing graphene
CN103523770A (en) * 2013-10-18 2014-01-22 中国科学院上海微系统与信息技术研究所 Preparation method of graphene

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102963883A (en) * 2012-10-22 2013-03-13 武汉大学 Method for preparing graphene
CN103523770A (en) * 2013-10-18 2014-01-22 中国科学院上海微系统与信息技术研究所 Preparation method of graphene

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109824039A (en) * 2019-03-26 2019-05-31 宁波大学 A method of doped graphene is prepared using doped graphene quantum dot as nucleation point

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