CN107644927A - The growth of micro- light emitting diode and transloading equipment and conveyer method - Google Patents
The growth of micro- light emitting diode and transloading equipment and conveyer method Download PDFInfo
- Publication number
- CN107644927A CN107644927A CN201710986144.2A CN201710986144A CN107644927A CN 107644927 A CN107644927 A CN 107644927A CN 201710986144 A CN201710986144 A CN 201710986144A CN 107644927 A CN107644927 A CN 107644927A
- Authority
- CN
- China
- Prior art keywords
- micro
- light emitting
- emitting diode
- transported
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
The application is related to display technology field; more particularly to growth and the transloading equipment of a kind of micro- light emitting diode; including growth substrate, multiple micro- light emitting diodes, protective layer, transhipment substrate and pickup layer; in multiple micro- light emitting diodes; a part of micro- light emitting diode is part to be transported, and remainder is non-transhipment part；The protective layer covers the non-transhipment part；The pickup layer is arranged at the whole face of the side of the transhipment substrate, and the pickup layer at least has the elastic force perpendicular to the direction of the transhipment substrate, and the pickup layer has the pickup force for picking up the part to be transported.The application can adapt to micro- light emitting diode to be transported of different array arrangements, so as to save the manufacturing cost of growth and transloading equipment.
Description
Technical field
The application is related to display technology field, more particularly to the growth and transloading equipment and transhipment of a kind of micro- light emitting diode
Method.
Background technology
Micro- light emitting diode (Micro-LED) is a kind of device of size between several microns to hundreds of microns, due to it
It is much smaller compared with the size of common LED, distance between two neighboring pixel can be reduced to micron order from grade, because
This, realizes that miniature display panel is possibly realized using micro- light emitting diode matrix.
The preparation method of miniature display panel, micro- light emitting diode is directly first formed in the growth substrate of supplying substrate
Array, generally, area of each micro- light emitting diode close to the side of growth substrate in micro- light emitting diode matrix are more than another
The area of side；Then micro- light emitting diode is transferred on reception substrate by transporting head, is packaged, is formed to receiving substrate
Micro display panel.
It is therefore, each micro- because area of the existing this micro- light emitting diode close to growth substrate side is big compared with opposite side
Light emitting diode is more balanced with the cohesive force of growth substrate, therefore matched transhipment head shape generally in rigid basement
Into multiple projections, multiple raised and each micro- light emitting diode to be transported corresponds, by micro- light emitting diode to be transported
Transfer.Obviously, when transporting micro- light emitting diode of different array arrangements, the raised setting difference transported on head is, it is necessary to make
Different transhipment heads, adds cost of manufacture.
The content of the invention
This application provides a kind of growth of micro- light emitting diode and transloading equipment and conveyer method, above-mentioned ask can solve the problem that
Topic.
The first aspect of the application provides growth and the transloading equipment of a kind of micro- light emitting diode, including：
Growth substrate,
Multiple micro- light emitting diodes, wherein, a part of micro- light emitting diode is part to be transported, and remainder is non-
Transhipment part；
Protective layer, the protective layer cover the non-transhipment part；
Transport substrate,
Layer is picked up, is arranged at the whole face of the side of the transhipment substrate, the pickup layer at least has perpendicular to described turn
The elastic force in the direction of substrate is transported, the pickup layer has the pickup force for picking up the part to be transported.
Preferably, each micro- light emitting diode includes body and connecting portion, and the body is formed by the connecting portion
In the side of the growth substrate, and along perpendicular to the direction of the growth substrate, each body and the growth substrate it
Between leave gap；
Also include supporting layer, the supporting layer fill the body and the growth substrate in the non-transhipment part it
Between the gap.
Preferably, the connecting portion and the body one-shot forming.
Preferably, the thickness of the body is big compared with the thickness of the connecting portion, and the direction where the thickness is perpendicular to institute
State growth substrate.
Preferably, the material of the protective layer is at least one of metal and photoresist.
Preferably, the pickup layer has deformation state and non-deformed state, in the non-deformed state, the pickup layer
Minimum thickness be more than one side of the protective layer away from the growth substrate with micro- light emitting diode away from the growth
The distance between one side of substrate, the direction where the thickness is perpendicular to the growth substrate.
The second aspect of the application provides a kind of growth using described in any of the above-described and transloading equipment transports micro- hair
The method of optical diode, including：
Multiple micro- light emitting diodes are formed in the side of growth substrate；
The first film layer is formed in side of multiple micro- light emitting diodes away from the growth substrate；
Pattern first film layer, exposure micro- light emitting diode to be transported；
Whole face forms pickup layer, the pickup flexible power of layer in transhipment substrate；
The pickup layer is pressed with the growth substrate, the pickup layer and micro- light-emitting diodes to be transported
Pipe is bonded；
Pick up micro- light emitting diode to be transported.
Preferably, it is described that multiple micro- light emitting diodes are formed in the side of growth substrate, be specially：
The second film layer is formed in the side of the growth substrate；
Multiple micro- light emitting diodes are formed in the side of second film layer away from the growth substrate, it is each described micro- luminous
Diode includes body and connecting portion, and the connecting portion is used to connect the body and the growth substrate；
Wherein, second film layer is formed between the body and the growth substrate.
Preferably, patterning first film layer, exposure micro- light emitting diode to be transported, it is specially：
First film layer is patterned, exposes micro- light emitting diode to be transported, and in second film layer
The part relative with the body of micro- light emitting diode to be transported, remaining part shape in first film layer
Into protective layer；
Etch the body in second film layer positioned at micro- light emitting diode to be transported and the life
Part between long substrate, the connecting portion of exposure micro- light emitting diode to be transported, in second film layer
Remaining part forms supporting layer.
Preferably, it is described to press the pickup layer with the growth substrate, the pickup layer and the institute to be transported
Micro- light emitting diode fitting is stated, is specially：
The transhipment substrate and the pickup layer deform upon the pickup layer, so that institute close to the growth substrate
Pickup layer is stated to be bonded with the body of micro- light emitting diode to be transported and the protective layer.
Preferably, pickup micro- light emitting diode to be transported, it is specially：
Apply the first active force to the transhipment substrate, the pickup layer is extruded described to be transported described micro- luminous two
Pole pipe, micro- light emitting diode to be transported and the growth substrate is set to be broken at its described connecting portion, wherein, described the
The direction of the growth substrate is pointed to for micro- light emitting diode in the direction of one active force；
The transhipment substrate move to away from the direction of the growth substrate, and the pickup layer picks up described to be transported micro-
Light emitting diode.
Preferably, pickup micro- light emitting diode to be transported, it is specially：
The pickup layer bonding adsorbs micro- light emitting diode to be transported；
Apply the second active force to the transhipment substrate, make micro- light emitting diode to be transported and the growth
Substrate is broken at its described connecting portion, wherein, micro- hair is pointed in the direction of second active force for the growth substrate
The direction of optical diode；
The transhipment substrate move to away from the direction of the growth substrate, and the pickup layer picks up described to be transported micro-
Light emitting diode.
Preferably, the patterning first film layer, exposure micro- light emitting diode to be transported and described
The part relative with the body of micro- light emitting diode to be transported in second film layer, it is specially：
The part that micro- light emitting diode to be transported is covered in first film layer is etched using photoetching process, is made
In micro- light emitting diode to be transported and second film layer with micro- light emitting diode to be transported
The relative partial denudation of the body.
Preferably, described of micro- light emitting diode to be transported is located in etching second film layer
Part between body and the growth substrate, the connecting portion of exposure micro- light emitting diode to be transported, specifically
For：
The body for being located at micro- light emitting diode to be transported in second film layer is etched with wet etching
With the part between the growth substrate, make the connecting portion of micro- light emitting diode to be transported exposed.
The technical scheme that the application provides can reach following beneficial effect：
Growth provided herein and transloading equipment, pickup layer, the pickup layer are formed in the whole face of transhipment substrate side
Flexible power, for micro- light emitting diode to be transported of different array arrangements, pick up layer and micro- light emitting diode close to when,
The part that pickup layer has, which is squeezed, to be deformed upon, so that the part in pickup layer is pasted with micro- light emitting diode to be transported
Close, do not contacted between remainder and remaining micro- light emitting diode, then pick up layer and pick up micro- light emitting diode to be transported,
After pickup layer picks up micro- light emitting diode to be transported, pickup layer restores to the original state.Clearly as the side of transhipment substrate is whole
Face has pickup layer, and picks up the flexible power of layer, therefore, it is possible to adapt to micro- light-emitting diodes to be transported of different array arrangements
Pipe, so as to save the manufacturing cost of growth and transloading equipment.
It should be appreciated that the general description and following detailed description of the above are only exemplary, this can not be limited
Application.
Brief description of the drawings
Fig. 1 is a kind of structural representation of specific embodiment of growth provided herein and transloading equipment；
Fig. 2 is a kind of flow chart of specific embodiment of the method for the micro- light emitting diode of transhipment provided herein；
Fig. 3-9 is that growth and transhipment in each step are set in the method for the micro- light emitting diode of transhipment provided herein
Standby structural representation.
Reference：
10- growth substrates；
The micro- light emitting diodes of 20-；
21- bodies；
22- connecting portions；
23- parts to be transported；
The non-transhipment parts of 24-；
30- protective layers；
40- transports substrate；
50- picks up layer；
The film layers of 60- first；
70- supporting layers；
The film layers of 80- second.
Accompanying drawing herein is merged in specification and forms the part of this specification, shows the implementation for meeting the application
Example, and be used to together with specification to explain the principle of the application.
Embodiment
The application is described in further detail below by specific embodiment and with reference to accompanying drawing.It should be noted
It is that the noun of locality such as " on ", " under ", "left", "right" described by the embodiment of the present application is retouched with angle shown in the drawings
State, should not be construed as the restriction to the embodiment of the present application.In addition, within a context, it is also necessary to understanding, when mentioning one
When element is formed on another element " on " or " under ", its can not only be formed directly into another element " on " or
" under ", it can also be indirectly formed by intermediary element another element " on " or " under ".
With reference to figure 1, Fig. 1 is a kind of structural representation of specific embodiment of growth provided herein and transloading equipment
Figure.
The embodiment of the present application provides growth and the transloading equipment of a kind of micro- light emitting diode, including growth substrate 10, more
Individual micro- light emitting diode 20, protective layer 30, transhipment substrate 40 and pickup layer 50.It is a part of micro- in multiple micro- light emitting diodes 20
Light emitting diode 20 is part 23 to be transported, and remainder is non-transhipment part 24；Protective layer 30 covers non-transhipment part.Pickup
Layer 50 is arranged at the whole face of the side of transhipment substrate 40, and pickup layer 50 at least has the elasticity perpendicular to the direction of transhipment substrate 40
Power, that is, picking up layer 50 has deformation state and non-deformed state, and picks up layer 50 with the pickup force for picking up part 23 to be transported.
With reference to figure 2-9, Fig. 2 is a kind of specific embodiment of the method for the micro- light emitting diode of transhipment provided herein
Flow chart；Fig. 3-9 is growth and transloading equipment in each step in the method for the micro- light emitting diode of transhipment provided herein
Structural representation.
The method for transporting micro- light emitting diode using above-mentioned growth and transloading equipment, including：
S100：Multiple micro- light emitting diodes 20 are formed in the side of growth substrate 10, as shown in figure 4, usually, Duo Gewei
Light emitting diode 20 is arranged in array, and light emitting diode 20 includes part 23 to be transported and non-transhipment part 24 slightly for this；
S200：The first film layer 60 is formed in side of multiple micro- light emitting diodes 20 away from growth substrate 10, specifically, can
To form the first film layer 60 in top surface of micro- light emitting diode 20 away from growth substrate 10 and the side being connected with the top surface, make
First film layer 60 covers the surface of each micro- light emitting diode 20, as shown in Figure 5；
S300：The first film layer 60 is patterned, to form protective layer 30, protective layer 30 is only covered non-transhipment part；Exposure
Micro- light emitting diode 20 to be transported, that is, part 23 to be transported in micro- light emitting diode 20 is exposed, generally by part to be transported
Top surface of each micro- light emitting diode 20 away from growth substrate 10 and the side being connected with the top surface are exposed in 23, such as scheme
Shown in 7, now, because part 23 to be transported is exposed, the non-matcoveredn 30 of transhipment part 24 covers, therefore, part 23 to be transported
Difference in height D4 is formd with one side of the protective layer 30 away from growth substrate 10；
S400：Whole face forms pickup layer 50 in transhipment substrate 40, picks up 50 flexible power of layer, that is, picks up layer 50 at least
Elastic deformability with edge perpendicular to the direction of transhipment substrate 40；
S500：Pickup layer 50 is pressed with growth substrate 10, pickup layer 50 (is treated with micro- light emitting diode 20 to be transported
Transhipment part 23) fitting, as shown in figure 8, i.e. now pickup layer 50 is in deformation state；
S600：Micro- light emitting diode 20 to be transported (part 23 i.e. to be transported) is picked up, specifically, pickup mode can be
Electrostatic Absorption, it can also be bonded and adsorbed by bonding agent, as shown in Figure 9.
Above-mentioned growth and transloading equipment, because the matcoveredn 30 of non-transhipment part 24 in multiple micro- light emitting diodes 20 covers
Lid, and part to be transported 23 is exposed, therefore, one side of the part 23 to be transported away from growth substrate 10 is with protective layer 30 away from growth
Difference in height D4 is formed between the one side of substrate 10；And form pickup layer 50, the pickup layer 50 in the whole face of transhipment substrate 40 side
Flexible power, for micro- light emitting diode 20 to be transported of different array arrangements, in pickup layer 50 and micro- light emitting diode 20
Close to when, the part (i.e. the part relative with non-transhipment part 24) that has of pickup layer 50, which is squeezed, to be deformed upon, so as to pick up
A part in layer 50 is bonded with to be transported 23 micro- light emitting diode 20, remainder and remaining micro- light emitting diode 20 it
Between do not contact, then pick up layer 50 and pick up micro- light emitting diode 20 to be transported, when pickup layer 50 pick up it is to be transported micro- luminous
After diode 20, pickup layer 50 restores to the original state and (picks up layer 50 to recover to non-deformed state).Clearly as transhipment substrate 40
The whole face of side has pickup layer 50, and picks up 50 flexible power of layer, therefore, for the to be transported micro- of different array arrangements
Light emitting diode 20, same pickup layer 50 can be used, so save the manufacturing cost of growth and transloading equipment.
It is to be appreciated that transhipment substrate 40 forms transhipment head with pickup layer 50, i.e. step S400 forms transhipment head.
Growth substrate 10 forms supplying substrate with micro- light emitting diode 20, for providing micro- light emitting diode 20, protection
Layer 30 is used to protect non-transhipment part, when pickup layer 50 picks up part to be transported, prevents non-transhipment part with picking up layer 50
Contact, to ensure the accuracy of the pickup pickup of layer 50.Generally, supplying substrate forms structure as shown in Figure 5, and the first film layer 60 is covered
Each micro- light emitting diode 20 (including part to be transported 23 and non-transhipment part 24) is covered, then according to micro- light-emitting diodes to be transported
The arrangement mode of pipe 20 patterns the first film layer 60, exposes part 23 to be transported, in case transhipment head transports part 23 to be transported,
That is above-mentioned steps S100~S300 forms supplying substrate.
It should be noted that the no sequencing of formation of the formation and supplying substrate of transhipment head, can be initially formed supply
Substrate, re-form transhipment head；Transhipment head can also be initially formed, re-forms supplying substrate.In head to be transported and the equal shape of supplying substrate
Cheng Hou, perform step S500 and step S600.
Pick up layer 50 away from transhipment substrate 40 the generally planar structure of one side, protective layer 30 away from growth substrate 10 one
The one side of face and micro- light emitting diode 20 away from growth substrate 10 is planar structure, in order to preferably control pickup layer 50
With being bonded for part 23 to be transported, and the interval with non-transhipment part 24.In above-mentioned steps S600, pickup layer 50, which picks up, to be waited to turn
After transporting part 23, part 23 to be transported can move together with pickup layer 50 (and transhipment substrate 40), in order to will be to be transported
Part 23, which is positioned over, to be received on substrate.
The material of above-mentioned pickup layer 50 can be silica gel material, and its surface can set PDMS membrane, with
When picking up part 23 to be transported, using the adhesive bond of dimethyl silicone polymer part 23 to be transported, pickup force now is viscous
Relay.Pickup layer 50 can also pick up part 23 to be transported by way of Electrostatic Absorption.
It is to be appreciated that if micro- light emitting diode 20 and the connection area of growth substrate 10 are too big, can cause to pick up layer
The force ratio of 50 pickup parts 23 to be transported is larger, micro- in a kind of alternative embodiment of the application in order to solve the above problems
Light emitting diode 20 includes body 21 and connecting portion 22, and body 21 is formed at the side of growth substrate 10 by connecting portion 22, and
Along gap is left between the direction of growth substrate 10, each body 21 and growth substrate 10, i.e., along perpendicular to growth substrate
10 direction, the area of the projection of body 21 are more than the area of the projection of connecting portion 22.So reduce micro- light emitting diode 20
With the connection area of growth substrate 10, and then reduce attachment force therebetween, so that pickup layer 50 is easy to pick up portion to be transported
Point.
In above-described embodiment, if the attachment force between micro- light emitting diode 20 and growth substrate 10 is too big, to pickup
The pickup force of layer 50 requires bigger；If the attachment force between micro- light emitting diode 20 and growth substrate 10 is too small, drawing
, may be between non-transhipment part 24 and growth substrate 10 when breaking or breaking part 23 to be transported and the connection of growth substrate 10
Connection status can damage.Therefore, the attachment force between part 23 to be transported and growth substrate 10 requires as small as possible, and
Attachment force between non-transhipment part 24 and growth substrate 10 requires as big as possible, in order to balance above two attachment force, growth
Also include supporting layer 70 with transloading equipment, supporting layer 70 is filled between body 21 and growth substrate 10 in non-transhipment part 24
Gap, as shown in fig. 7, the attachment force of non-transhipment part and growth substrate 10 is added by supporting layer 70, so, micro- luminous
When diode 20 and the less attachment force of growth substrate 10, non-transhipment part 24 and growth can be also compensated by supporting layer 70
Attachment force between substrate 10, so as to when pickup layer 50 picks up part 23 to be transported, the pickup pickup of layer 50 is easy to treat
Transhipment part 23, and can enough ensure that the connection of non-transhipment part 24 and growth substrate 10 is not destroyed as far as possible.
Above-mentioned connecting portion 22 can be formed step by step with body 21, and alternatively, connecting portion 22 walks with body 21 in a technique
Formed in rapid, to simplify formation process.
When micro- light emitting diode 20 includes connecting portion 22, in above-mentioned steps S200, formed in the side of growth substrate 10
Multiple micro- light emitting diodes 20, are specifically as follows：
S201：The second film layer 80 is formed in the side of growth substrate 10, as shown in Figure 3；
S202：Multiple micro- light emitting diodes 20 are formed in the second side of the film layer 80 away from growth substrate 10, it is each micro- luminous
Diode 20 includes body 21 and connecting portion 22, and connecting portion 22 is used to connect body 21 and growth substrate 10, as shown in Figure 4；
Wherein, above-mentioned second film layer 80 is formed between body 21 and growth substrate 10, the film layer 80 of connecting portion 22 and second
Positioned at same film layer.
In this way, connecting portion 22, i.e. connecting portion 22 and the one-shot forming of body 21, work are formed by the second film layer 80
Skill is simple, easy to operation；And the bonding strength of connecting portion 22 and body 21 can be increased, make micro- light emitting diode 20 and growth base
The attachment force at bottom 10 will not be too small.Certainly, connecting portion 22 can also be formed step by step with body 21, such as first the one of growth substrate 10
Side forms connecting portion 22, then forms body 21 in side of the connecting portion 22 away from growth substrate 10.
It should be noted that when including supporting layer 70, generally use body 21 and the one-shot forming of connecting portion 22, with facility
It is identical with the material of the second film layer 80 with the straight forming supporting layer 70 of the second film layer 80, i.e. supporting layer 70.Specifically, above-mentioned steps
In S300, the first film layer 60 is patterned, exposes micro- light emitting diode 20 to be transported, including：
S301：The first film layer 60, exposure micro- light emitting diode 20 to be transported are patterned, and is turned in the second film layer 60 with waiting
The relative part of body 21 of micro- light emitting diode 20 of fortune, remaining part forms protective layer 30 in the first film layer 60；
S302：Etch in the second film layer 80 positioned at micro- light emitting diode 20 to be transported body 21 and growth substrate 10 it
Between part, the connecting portion 22 of exposure micro- light emitting diode 20 to be transported, remaining part forms support in the second film layer 80
Layer 70.
In this way, supporting layer 70 can be a part for the second film layer 80, therefore, there is no need to independently form support
The film layer 80 of layer 70 and second, so as to save manufacturing process.
Usually, as shown in figure 1, the thickness D1 of body 21 is big compared with the thickness D2 of connecting portion 22, the side where above-mentioned thickness
To perpendicular to growth substrate 10, wish only to pick up body 21 due to after the fracture of connecting portion 22, picking up layer 50, using this knot
Structure, the part for the connecting portion 22 being connected on body 21 can be reduced as far as possible, so that pickup layer 50 as far as possible only treat by pickup
The body 21 of transhipment part, received in order to which the body 21 of part to be transported is positioned on substrate.
Due to picking up 50 flexible power of layer, it may occur that elastic deformation, support force therefore, during in order to be deformed to it is provided,
Transport substrate 40 and be generally rigid structure, in order to when pickup layer 50 is bonded with part to be transported, transport substrate 40 and protection
The pickup layer 50 that layer 30 is pointed to therebetween together is extruded, and deforms the part.
When pickup layer 50 is in non-deformed state, the minimum thickness D3 of pickup layer 50 is more than protective layer 30 away from growth base
Bottom 10 with micro- light emitting diode 20 away from growth substrate 10 while the distance between D4, as shown in figure 1, above-mentioned thickness
, using the structure, pasted with part to be transported and protective layer 30 in pickup layer 50 perpendicular to growth substrate 10 in the direction at place
During conjunction, the elastic deformation limit of pickup layer 50 is not up to, ensure that the life-span of pickup layer 50；And the structure can make it is to be transported
Part fully contacts with pickup layer 50, so as to ensure that pickup layer 50 picks up the reliability of part to be transported.
Further, in order to extend the service life of pickup layer 50, when pickup layer 50 is bonded with part to be transported, it is desirable to
The deformation of pickup layer 50 is as small as possible, and therefore, one side of the protective layer 30 away from growth substrate 10 and micro- light emitting diode 20 are remote
The distance between the one side of growth substrate 10 D4 is the smaller the better.
When transporting head with supplying substrate manufacture, the spacing distance between two neighboring micro- light emitting diode 20 is bigger, away from
It is bigger from D4, it is desirable to which that the elastic deformability for picking up layer 50 is better.
In the various embodiments described above, protective layer 30 protects the surface of non-transhipment part 24, i.e. protective layer 30 covers non-transhipment portion
Top surface of each micro- light emitting diode 20 away from growth substrate 10 and the side being connected with hd top face in points 24, as shown in Fig. 1,7,
The non-run-off the straight of transhipment part 24 is caused to prevent from picking up when layer 50 presses with part 23 to be transported, especially in micro- light emitting diode
20 when including connecting portion 22.
Specifically, protective layer 30 can be formed by coating process, can also depositing operation formed, using depositing operation
During formation, contact of the coating head with micro- light emitting diode 20 can be avoided, so as to prevent from causing micro- light emitting diode 20 to tilt.
The material of protective layer 30 can be at least one of metal and photoresist, that is to say, that the material of protective layer 30
Can be only metal or photoresist, or the mixed materials of metal and photoresist.It is metal in the material of protective layer 30
When, i.e., the material of the first film layer 60 is metal, such as alloy, aluminium material, the first film layer 60 can be carried out by wet-etching technique
Patterning, to form protective layer 30；When the material of protective layer 30 is photoresist, i.e., the material of the first film layer 60 is photoresist,
The first film layer 60 can be patterned by photoetching process, to form protective layer 30.
In above-mentioned steps S301, the first film layer 60, the exposure film layer of micro- light emitting diode 20 and second to be transported are patterned
The part relative with the body 21 of micro- light emitting diode 20 to be transported in 80, it is specially：
The part that micro- light emitting diode 20 to be transported is covered in the first film layer 60 is etched using photoetching process, is made to be transported
The partial denudation relative with the body 21 of micro- light emitting diode 20 to be transported in micro- film layer 80 of light emitting diode 20 and second, such as
Shown in Fig. 6.
Usually, the second film layer 80 and the material of supporting layer 70 are generally metal, therefore, in step S302, etching second
Part in film layer 80 between the body 21 of micro- light emitting diode 20 to be transported and growth substrate 10, exposure are to be transported
The connecting portion 22 of micro- light emitting diode 20, it is specially：
The body 21 and growth substrate for being located at micro- light emitting diode 20 to be transported in the second film layer 80 are etched with wet etching
Part between 10, make the connecting portion 22 of micro- light emitting diode 20 to be transported exposed, as shown in Figure 7.
From the foregoing, it will be observed that the first film layer 60 is etched using photoetching process, the second film layer 80 is etched using wet etching, can avoid carving
Etching liquid is to the etching of the second film layer 80 when losing the first film layer 60, so as to ensure the precision of etching.
It should be noted that it is metal in protective layer 30 (i.e. the first film layer 60) and supporting layer 70 (i.e. the second film layer 80)
When, the material of the two is different, and corresponding etching liquid will not etch micro- light emitting diode 20；And using wet etching etching first
The etching liquid of film layer 60 will not also etch the second film layer 80.
In above-mentioned steps S500, pickup layer 50 is pressed with growth substrate 10, pickup layer 50 and to be transported micro- luminous two
Pole pipe 20 is bonded, and is specially：
Substrate 40 and pickup layer 50 are transported close to growth substrate 10, deforms upon pickup layer 50 so that pickup layer 50 with
The body 21 and protective layer 30 of micro- light emitting diode 20 to be transported are bonded, as shown in figure 8, now, pickup layer 50 is in
Deformation state.
Wherein, the body 21 of above-mentioned part to be transported 23 can be real by stretching mode with the disconnection mode of connecting portion 22
It is existing, it can also be realized by fashion of extrusion, when being realized by fashion of extrusion, in above-mentioned steps S600, picked up to be transported micro-
Light emitting diode 20, it is specially：
S601：Apply the first active force to transhipment substrate 40, pickup layer 50 is extruded micro- light emitting diode 20 to be transported,
Micro- light emitting diode 20 to be transported is set to be broken with growth substrate 10 at its connecting portion 22, wherein, the direction of the first active force
The direction of growth substrate 10 is pointed to for micro- light emitting diode 20, as shown in figure 8, the dotted line in figure at micro- light emitting diode 20 is company
The faulted joint A of socket part 22；
S602：Transhipment substrate 40 move to away from the direction of growth substrate 10, and pickup layer 50 picks up to be transported micro- light
Diode 20, as shown in figure 9, now picking up layer 50 recovers deformation, in undeformed state.
By the way of extruding, body 21 is first set to be disconnected with connecting portion 22, then by bonding force or electrostatic adsorption force
Micro- light emitting diode 20 is picked up, especially when picking up layer 50 by the way of bonding and picking up micro- light emitting diode 20, in pickup layer
During the 50 micro- light emitting diode 20 of extruding, by increasing capacitance it is possible to increase the bonding force of pickup layer 50 and micro- light emitting diode 20, so as to increase the two
The reliability of bonding, ensure the precision that pickup layer 50 picks up；And this mode, pickup layer 50 adsorb (Electrostatic Absorption or bonding
Absorption) micro- light emitting diode 20 the direction of motion it is identical with picking up the direction of motion that layer 50 makes body 21 be disconnected with connecting portion 22,
Therefore, the two steps can be carried out simultaneously, so as to save the transhipment process of micro- light emitting diode 20；This method, due to
Body 21 is realized with connecting portion 22 by fashion of extrusion to be disconnected, and micro- light-emitting diodes are transported from growth substrate 10 in pickup layer 50
During pipe 20, micro- light emitting diode 20 disconnects with growth substrate 10, therefore, pickup layer 50 only needs to overcome micro- light emitting diode 20 certainly
The gravity of body, it is clear that the absorption affinity of pickup layer 50 need not be too big.
When the body 21 of part to be transported is disconnected with connecting portion 22 by stretching mode, in above-mentioned steps S600,
Picking up the method for micro- light emitting diode 20 to be transported can also be specially：
S603：Pickup layer 50 is bonded or adsorbed micro- light emitting diode 20 to be transported；
S604：Apply the second active force to transhipment substrate 40, make micro- light emitting diode 20 to be transported and growth substrate 10
It is broken at its connecting portion 22, wherein, the direction of micro- light emitting diode 20 is pointed in the direction of the second active force for growth substrate 10；
S605：Transhipment substrate 40 move to away from the direction of growth substrate 10, and pickup layer 50 picks up to be transported micro- light
Diode 20.
By the way of this stretching, pickup layer 50 be bonded with micro- light emitting diode 20 after, by pick up layer 50 with it is micro-
Attachment force or absorption affinity between light emitting diode 20 break the body 21 of part to be transported with connecting portion 22, it is clear that no
Need pickup layer 50 that compression further occurs, so picking up the thickness of layer 50 only needs to meet the shape that above-mentioned distance D4 occurs
Change, therefore, the thickness for picking up layer 50 need not be too big, so as to save the material of pickup layer 50.
The preferred embodiment of the application is the foregoing is only, is not limited to the application, for the skill of this area
For art personnel, the application can have various modifications and variations.It is all within spirit herein and principle, made any repair
Change, equivalent substitution, improvement etc., should be included within the protection domain of the application.
Claims (14)
1. growth and the transloading equipment of a kind of micro- light emitting diode, it is characterised in that including：
Growth substrate,
Multiple micro- light emitting diodes, wherein, a part of micro- light emitting diode is part to be transported, and remainder is non-transhipment
Part；
Protective layer, the protective layer cover the non-transhipment part；
Transport substrate,
Layer is picked up, is arranged at the whole face of the side of the transhipment substrate, the pickup layer at least has perpendicular to the transhipment base
The elastic force in the direction at bottom, the pickup layer have the pickup force for picking up the part to be transported.
2. growth and the transloading equipment of micro- light emitting diode according to claim 1, it is characterised in that each described micro- luminous
Diode includes body and connecting portion, and the body is formed at the side of the growth substrate by the connecting portion, and along hanging down
Directly gap is left between the direction of the growth substrate, each body and the growth substrate；
Also include supporting layer, the supporting layer is filled between the body and the growth substrate in the non-transhipment part
The gap.
3. growth and the transloading equipment of micro- light emitting diode according to claim 2, it is characterised in that the connecting portion with
The body one-shot forming.
4. growth and the transloading equipment of micro- light emitting diode according to claim 2, it is characterised in that the thickness of the body
Degree is big compared with the thickness of the connecting portion, and the direction where the thickness is perpendicular to the growth substrate.
5. growth and the transloading equipment of micro- light emitting diode according to claim any one of 1-4, it is characterised in that described
The material of protective layer is at least one of metal and photoresist.
6. growth and the transloading equipment of micro- light emitting diode according to claim any one of 1-4, it is characterised in that described
Pickup layer has deformation state and non-deformed state, and in the non-deformed state, the minimum thickness of the pickup layer is more than described
Protective layer away from the growth substrate micro- light emitting diode away from the growth substrate while between away from
From the direction where the thickness is perpendicular to the growth substrate.
7. a kind of method that micro- light emitting diode is transported in growth and transloading equipment using described in claim any one of 1-6, its
It is characterised by, including：
Multiple micro- light emitting diodes are formed in the side of growth substrate；
The first film layer is formed in side of multiple micro- light emitting diodes away from the growth substrate；
Pattern first film layer, exposure micro- light emitting diode to be transported；
Whole face forms pickup layer, the pickup flexible power of layer in transhipment substrate；
The pickup layer is pressed with the growth substrate, the pickup layer pastes with micro- light emitting diode to be transported
Close；
Pick up micro- light emitting diode to be transported.
8. according to the method for claim 7, it is characterised in that described that multiple micro- luminous two are formed in the side of growth substrate
Pole pipe, it is specially：
The second film layer is formed in the side of the growth substrate；
Multiple micro- light emitting diodes, each micro- light-emitting diodes are formed in the side of second film layer away from the growth substrate
Pipe includes body and connecting portion, and the connecting portion is used to connect the body and the growth substrate；
Wherein, second film layer is formed between the body and the growth substrate.
9. according to the method for claim 8, it is characterised in that patterning first film layer, exposure are to be transported
Micro- light emitting diode, it is specially：
Pattern first film layer, exposure micro- light emitting diode to be transported, and in second film layer with institute
The relative part of the body of micro- light emitting diode to be transported is stated, remaining part forms guarantor in first film layer
Sheath；
Etch the body in second film layer positioned at micro- light emitting diode to be transported and the growth base
Part between bottom, the connecting portion of exposure micro- light emitting diode to be transported are remaining in second film layer
Part formed supporting layer.
10. according to the method for claim 9, it is characterised in that it is described to press the pickup layer with the growth substrate,
The pickup layer is bonded with micro- light emitting diode to be transported, is specially：
The transhipment substrate and the pickup layer deform upon the pickup layer, so that described pick up close to the growth substrate
The body and the protective layer for taking layer and micro- light emitting diode to be transported are bonded.
11. according to the method for claim 10, it is characterised in that pickup micro- light-emitting diodes to be transported
Pipe, it is specially：
Apply the first active force to the transhipment substrate, the pickup layer is extruded micro- light-emitting diodes to be transported
Pipe, micro- light emitting diode to be transported is set to be broken with the growth substrate at its described connecting portion, wherein, described first
The direction of the growth substrate is pointed to for micro- light emitting diode in the direction of active force；
The transhipment substrate move to away from the direction of the growth substrate, and the pickup layer pickup is described to be transported micro- to light
Diode.
12. according to the method for claim 10, it is characterised in that pickup micro- light-emitting diodes to be transported
Pipe, it is specially：
The pickup layer bonding adsorbs micro- light emitting diode to be transported；
Apply the second active force to the transhipment substrate, make micro- light emitting diode to be transported and the growth substrate
It is broken at its described connecting portion, wherein, the direction of second active force points to described micro- luminous two for the growth substrate
The direction of pole pipe；
The transhipment substrate move to away from the direction of the growth substrate, and the pickup layer pickup is described to be transported micro- to light
Diode.
13. according to the method described in claim any one of 9-12, it is characterised in that patterning first film layer, cruelly
Reveal in micro- light emitting diode to be transported and second film layer with micro- light emitting diode to be transported
The relative part of the body, be specially：
The part that micro- light emitting diode to be transported is covered in first film layer is etched using photoetching process, is made described
In micro- light emitting diode to be transported and second film layer with described in micro- light emitting diode to be transported
The relative partial denudation of body.
14. according to the method described in claim any one of 9-12, it is characterised in that be located in etching second film layer
Part between the body of micro- light emitting diode to be transported and the growth substrate, exposure are described to be transported
Micro- light emitting diode the connecting portion, be specially：
The body and the institute in second film layer positioned at micro- light emitting diode to be transported are etched with wet etching
The part between growth substrate is stated, makes the connecting portion of micro- light emitting diode to be transported exposed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710986144.2A CN107644927B (en) | 2017-10-20 | 2017-10-20 | Micro light-emitting diode growth and transfer equipment and transfer method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710986144.2A CN107644927B (en) | 2017-10-20 | 2017-10-20 | Micro light-emitting diode growth and transfer equipment and transfer method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107644927A true CN107644927A (en) | 2018-01-30 |
| CN107644927B CN107644927B (en) | 2020-01-31 |
Family
ID=61124151
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710986144.2A Active CN107644927B (en) | 2017-10-20 | 2017-10-20 | Micro light-emitting diode growth and transfer equipment and transfer method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107644927B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111584538A (en) * | 2020-06-05 | 2020-08-25 | 武汉华星光电技术有限公司 | Micro light emitting diode display device and manufacturing method thereof |
| WO2020238099A1 (en) * | 2019-05-31 | 2020-12-03 | 云谷（固安）科技有限公司 | Method for transferring micro light-emitting diode and method for manufacturing display panel |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105129259A (en) * | 2015-05-15 | 2015-12-09 | 友达光电股份有限公司 | Method for transmitting micro-assembly and method for manufacturing display panel |
| CN106681103A (en) * | 2017-01-03 | 2017-05-17 | 京东方科技集团股份有限公司 | Rolling wheel and manufacturing method therefor, and impressing equipment |
-
2017
- 2017-10-20 CN CN201710986144.2A patent/CN107644927B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105129259A (en) * | 2015-05-15 | 2015-12-09 | 友达光电股份有限公司 | Method for transmitting micro-assembly and method for manufacturing display panel |
| CN106681103A (en) * | 2017-01-03 | 2017-05-17 | 京东方科技集团股份有限公司 | Rolling wheel and manufacturing method therefor, and impressing equipment |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020238099A1 (en) * | 2019-05-31 | 2020-12-03 | 云谷（固安）科技有限公司 | Method for transferring micro light-emitting diode and method for manufacturing display panel |
| CN111584538A (en) * | 2020-06-05 | 2020-08-25 | 武汉华星光电技术有限公司 | Micro light emitting diode display device and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107644927B (en) | 2020-01-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6483246B2 (en) | Micro lifting / joining assembly method | |
| US10193012B2 (en) | Transferring method, manufacturing method, device and electronic apparatus of micro-LED | |
| US20080110862A1 (en) | Manufacturing method of the flexible display device | |
| TW201417267A (en) | Flexible displays | |
| US10256381B2 (en) | Electronic device and method for fabricating the same | |
| KR20200022626A (en) | Display panel having micro led and method of manufacturing the same | |
| CN109887867B (en) | Micro device transfer device and micro device transfer method | |
| WO2015109636A1 (en) | Membrane switch and manufacturing method therefor | |
| CN107644927A (en) | The growth of micro- light emitting diode and transloading equipment and conveyer method | |
| WO2020103405A1 (en) | Transfer method for micro light-emitting device and transfer apparatus | |
| CN111128819A (en) | Micro device transfer device and preparation method thereof | |
| JP2008242074A (en) | Manufacturing method of liquid crystal display device, and suction jig used therefor | |
| CN111993768A (en) | Steel mesh for printing solder paste, display panel and preparation method thereof | |
| CN112802789A (en) | Transfer method of micro-element | |
| CN116195059B (en) | Electronic device with borderless display | |
| US20220285309A1 (en) | Variable stiffness modules | |
| US20060119263A1 (en) | Double-side display device and method of making same | |
| KR20210004767A (en) | Layout structure between substrate, micro LED array and micro vacuum module for micro LED array transfer using micro vacuum module and Method for manufacturing micro LED display using the same | |
| TW201715360A (en) | Flexible touch panel and manufacturing method thereof and touch display panel | |
| CN113451490B (en) | Bonding method, display back plate and display back plate manufacturing system | |
| KR102334577B1 (en) | Method of transferring device and method of manufacturing electric panel using the same | |
| CN113427921A (en) | Silver paste transfer printing method, Micro-LED transfer printing method and Micro-LED | |
| US11295972B2 (en) | Layout structure between substrate, micro-LED array and micro-vacuum module for micro-LED array transfer using micro-vacuum module, and method for manufacturing micro-LED display using the same | |
| CN112701195B (en) | Transfer device and transfer method for micro-component | |
| CN116190499A (en) | Display panel, preparation method thereof and display device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |