CN107644891A - The preparation method of flexible OLED panel - Google Patents
The preparation method of flexible OLED panel Download PDFInfo
- Publication number
- CN107644891A CN107644891A CN201710824009.8A CN201710824009A CN107644891A CN 107644891 A CN107644891 A CN 107644891A CN 201710824009 A CN201710824009 A CN 201710824009A CN 107644891 A CN107644891 A CN 107644891A
- Authority
- CN
- China
- Prior art keywords
- layer
- substrate
- flexible
- oled
- preparation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 146
- 239000011521 glass Substances 0.000 claims abstract description 51
- 238000000034 method Methods 0.000 claims abstract description 14
- 239000004642 Polyimide Substances 0.000 claims description 18
- 229920001721 polyimide Polymers 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 7
- 230000004888 barrier function Effects 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 6
- 238000005538 encapsulation Methods 0.000 claims description 5
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 claims description 3
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 239000002648 laminated material Substances 0.000 claims description 3
- 238000012856 packing Methods 0.000 claims description 3
- 230000027756 respiratory electron transport chain Effects 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910001887 tin oxide Inorganic materials 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- 229920005591 polysilicon Polymers 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 abstract description 6
- 238000000576 coating method Methods 0.000 abstract description 6
- 238000002834 transmittance Methods 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 description 6
- 239000011368 organic material Substances 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000009738 saturating Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
- H10K71/421—Thermal treatment, e.g. annealing in the presence of a solvent vapour using coherent electromagnetic radiation, e.g. laser annealing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
- H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The present invention provides a kind of preparation method of flexible OLED panel, coating forms flexible substrate substrate first on the glass substrate of high light transmittance, TFT layer and oled layer are made successively on flexible substrate substrate again, laser lift-off is finally carried out to flexible substrate substrate using laser, the flexible substrate substrate is set to be stripped down from glass substrate, because the glass substrate is more than 96% to the transmitance of the laser, when flexible substrate substrate is peeled off from glass substrate using laser lift-off technique, it can allow most laser light glass substrate, just flexible substrate substrate can be made to be stripped down from glass substrate thereby using relatively low energy, and then the performance of flexible substrate substrate and TFT layer is not interfered with, it is electrical that normal TFT can be obtained, product yield can significantly be improved.
Description
Technical field
The present invention relates to display technology field, more particularly to a kind of preparation method of flexible OLED panel.
Background technology
Organic Light Emitting Diode (Organic Light Emitting Diode, OLED) display has self-luminous, driven
Dynamic voltage is low, luminous efficiency is high, the response time is short, definition and contrast are high, nearly 180 ° of visual angles, use temperature range are wide, can
Many advantages, such as Flexible Displays are with large area total colouring is realized, it is the display device for most having development potentiality to be known as by industry.
OLED Display Techniques are different from traditional lcd technology, without backlight, the very thin organic material of use
Coating and glass substrate, when have electric current by when, these organic materials will light.But due to organic material easily with steam or
Oxygen reaction, as the display device based on organic material, requirement of the OLED display screen to encapsulation is very high, therefore, passes through
The encapsulation of OLED improves the sealing inside OLED, isolates as far as possible with external environment condition, for OLED
Stabilized illumination is most important.
The encapsulation of OLED at present is mainly encapsulated on hard package substrate (such as glass or metal) by packaging plastic, but
It is that this method is not particularly suited for flexible device, and flexible OLED display is the following inexorable trend for showing industry development, therefore,
Also technical scheme is packaged by the film of lamination to OLED, the thin-film package mode is usually on substrate
Two layers of good barrier layer (Barrier Layer) of the water preventing ability for inorganic material is formed above OLED, on two layers of barrier layer
Between form one layer of good cushion (Buffer Layer) of the pliability for organic material.Current this encapsulation technology compared with
For maturation, achieve good packaging effect and apply among Related product.
Flexible OLED display is to use flexible display device made of flexible base board (Flexible Substrate),
Generally use flexible polyimide (Polyimide, PI) substrate, wherein flexible PI substrates are by common glass substrate
One layer of PI film of coating is formed, and shells flexible PI substrates from glass substrate after OLED completes, then using laser
From getting off, but existing processing procedure ignores the influence of glass substrate light transmittance, and uses in general glass substrate, and its laser is worn
Saturating rate is only 90% or so, therefore needs to use very high energy (460-500mj) just to make flexibility when carrying out laser lift-off
PI substrates depart from glass substrate, and the laser of high-energy can the thin film transistor (TFT) of major injury to flexible PI substrates and thereon
(Thin Film Transistor, TFT) device, influences the electrical of TFT devices, causes yield to reduce.
The content of the invention
It is an object of the invention to provide a kind of preparation method of flexible OLED panel, can just be made using relatively low energy
Flexible substrate substrate strips down from glass substrate, does not interfere with the performance of flexible substrate substrate and TFT layer, can obtain
Normal TFT is electrical, so as to significantly improve product yield.
To achieve the above object, the present invention provides a kind of preparation method of flexible OLED panel, comprises the following steps：
Step S1, glass substrate is provided, flexible substrate substrate is formed on the glass substrate, in the flexible liner base
TFT layer is formed on plate, oled layer is formed on the TFT layer；
Step S2, laser lift-off is carried out to flexible substrate substrate using laser, makes the flexible substrate substrate from glass base
Stripped down on plate；
The glass substrate is more than 96% to the transmitance of the laser employed in the step S2.
Flexible substrate substrate formed in the step S1 is polyimide substrate, and its specific forming process is：Institute
One layer of polyimide material of coating on glass substrate is stated, it is toasted, obtains the flexible substrate substrate of polyimide material.
The wavelength of laser employed in the step S2 is 308nm.
The energy of laser used in the step S2 is 400-430mj.
TFT layer formed in the step S1 is used to be driven the oled layer, including multiple array arrangements
TFT devices, the TFT devices are low-temperature polysilicon or metal-oxide.
Oled layer formed in the step S1 includes first electrode layer on the TFT layer, located at the TFT
Layer is with the pixel defining layer in first electrode layer, the organic function layer in first electrode layer and located at pixel defining layer
With the second electrode lay on organic function layer；
The pixel defining layer crosses the pixel openings of multiple array arrangements in first electrode layer；The organic function layer
In the pixel openings；Organic function layer in each pixel openings, below corresponding first electrode layer and thereon
The second electrode lay corresponding to side collectively forms an OLED.
The detailed process of formation oled layer is in the step S1：First electrode layer is formed on the TFT layer, described
Pixel defining layer is formed in TFT layer and first electrode layer, organic work(is formed in multiple pixel openings of the pixel defining layer
Ergosphere, the second electrode lay is formed in the pixel defining layer and organic function layer.
Formed in the step S1 in oled layer, the first electrode layer, the second electrode lay are used separately as OLED
Anode and negative electrode, the first electrode layer are the laminated material of indium tin oxide layer/silver layer/indium tin oxide layer.
The organic function layer include set gradually hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and
Electron injecting layer.
The step S1 is additionally included in be formed after the oled layer, and encapsulated layer is formed on the oled layer, with to institute
Oled layer is stated to be packaged；
The encapsulated layer is thin-film packing structure, including the inorganic barrier layer and organic buffer layer being stacked.
Beneficial effects of the present invention：The preparation method of a kind of flexible OLED panel provided by the invention, first in high printing opacity
Property glass substrate on coating form flexible substrate substrate, then make TFT layer and oled layer successively on flexible substrate substrate, most
Laser lift-off is carried out to flexible substrate substrate using laser afterwards, the flexible substrate substrate is stripped down from glass substrate,
Because the glass substrate is more than 96% to the transmitance of the laser, using laser lift-off technique by flexible substrate substrate from glass
When being peeled off on glass substrate, most laser light glass substrate can be allowed, can just make flexibility thereby using relatively low energy
Underlay substrate strips down from glass substrate, and then does not interfere with the performance of flexible substrate substrate and TFT layer, can obtain
Normal TFT is electrical, can significantly improve product yield.
In order to be further understood that the feature of the present invention and technology contents, refer to below in connection with the detailed of the present invention
Illustrate and accompanying drawing, however accompanying drawing only provide with reference to and explanation use, be not used for being any limitation as the present invention.
Brief description of the drawings
Below in conjunction with the accompanying drawings, by the way that the embodiment of the present invention is described in detail, technical scheme will be made
And other beneficial effects are apparent.
In accompanying drawing,
Fig. 1 is the schematic flow sheet of the preparation method of the flexible OLED panel of the present invention；
Fig. 2-3 is the step S1 of the preparation method of the flexible OLED panel of present invention schematic diagram；
Fig. 4 is the step S2 of the preparation method of the flexible OLED panel of present invention schematic diagram.
Embodiment
Further to illustrate the technological means and its effect of the invention taken, below in conjunction with being preferable to carry out for the present invention
Example and its accompanying drawing are described in detail.
Referring to Fig. 1, the present invention provides a kind of preparation method of flexible OLED panel, comprise the following steps：
Step S1, as Figure 2-3, there is provided the glass substrate 500 of high printing opacity, formed on the glass substrate 500 soft
Property underlay substrate 110, on the flexible substrate substrate 110 formed TFT layer 120, form oled layer on the TFT layer 120
130；The transmitance for the laser that the glass substrate 500 is 308nm to wavelength is more than 96%.
Specifically, the flexible substrate substrate 110 formed in the step S1 is polyimides (PI) substrate, its specific shape
It is into process：One layer of polyimide material is coated with the glass substrate 500, it is toasted, obtains polyimides material
The flexible substrate substrate 110 of material.
Specifically, the TFT layer 120 formed in the step S1 is used to be driven the oled layer 130, including more
The TFT devices of individual array arrangement, the TFT devices be low temperature polycrystalline silicon (Low Temperature Poly-silicon,
LTPS) type or metal-oxide semiconductor (MOS) (Metal-Oxide Semiconductor, MOS) type, such as the oxidation of indium gallium zinc
The MOS type of thing (IGZO).
Specifically, the oled layer 130 formed in the step S1 includes the first electrode on the TFT layer 120
Layer 131, the pixel defining layer 135 on the TFT layer 120 and first electrode layer 131, in first electrode layer 131
Organic function layer 132 and the second electrode lay 133 in pixel defining layer 135 and organic function layer 132.
Specifically, the pixel defining layer 135 crosses the pixel openings of multiple array arrangements in first electrode layer 131
138；The organic function layer 132 is in the pixel openings 138；Organic function layer 132 in each pixel openings 138,
Below corresponding first electrode layer 131 and its top corresponding to the second electrode lay 133 collectively form an OLED D.
Specifically, the detailed process of formation oled layer 130 is in the step S1：First is formed on the TFT layer 120
Electrode layer 131, pixel defining layer 135 is formed on the TFT layer 120 and first electrode layer 131, in the pixel defining layer
Organic function layer 132 is formed in 135 multiple pixel openings 138, in the pixel defining layer 135 and organic function layer 132
Form the second electrode lay 133.
Specifically, formed in the step S1 in oled layer 130, the first electrode layer 131, the second electrode lay 133 divide
Not Yong Zuo OLED D anode (Anode) and negative electrode (Cathode), the first electrode layer 131 is transparent tin indium oxide
The laminated material of layer/silver layer/indium tin oxide layer (ITO/Ag/ITO).
Specifically, the organic function layer 132 include set gradually from down to up hole injection layer, hole transmission layer,
Luminescent layer, electron transfer layer and electron injecting layer.
Specifically, the step S1 is additionally included in be formed after the oled layer 130, is formed on the oled layer 130
Encapsulated layer (not shown), to be packaged to the oled layer 130.
Specifically, the encapsulated layer is thin-film packing structure, including the inorganic barrier layer and organic buffer layer being stacked.
Step S2, as shown in figure 4, using wavelength to carry out laser lift-off to flexible substrate substrate 110 for 308nm laser,
The flexible substrate substrate 110 is set to be stripped down from glass substrate 500.
Specifically, due to the substrate that the glass substrate 500 is high light transmittance, it is the saturating of 308nm laser to wavelength
Rate is crossed as more than 96%, therefore relative to prior art, in the step S2, uses the laser compared with low energy, specially 400-
The laser of 430mj energy, so that it may so that flexible substrate substrate 110 strips down from glass substrate 500.
The preparation method of the flexible OLED panel of the present invention, formed by being coated with the glass substrate 500 of high light transmittance
Flexible substrate substrate 110, the transmitance for the laser that the glass substrate 500 is 308nm to wavelength is more than 96%, is being used
When 308nm laser lift-off technique peels off flexible substrate substrate 110 from glass substrate 500, most laser can be allowed
Through glass substrate 500, thereby using relatively low energy flexible substrate substrate 110 can just peeled off from glass substrate 500
Get off, and then do not interfere with the performance of flexible substrate substrate 110 and TFT layer 120 thereon, normal TFT electricity can be obtained
Property, it can significantly improve product yield.
In summary, a kind of preparation method of flexible OLED panel provided by the invention, the first glass in high light transmittance
Coating forms flexible substrate substrate on substrate, then makes TFT layer and oled layer successively on flexible substrate substrate, finally using sharp
Light carries out laser lift-off to flexible substrate substrate, the flexible substrate substrate is stripped down from glass substrate, due to the glass
Glass substrate is more than 96% to the transmitance of the laser, peels off flexible substrate substrate from glass substrate in laser lift-off technique
When, it can allow most laser light glass substrate, flexible substrate substrate can be just made thereby using relatively low energy from glass
Stripped down on glass substrate, and then do not interfere with the performance of flexible substrate substrate and TFT layer, normal TFT electricity can be obtained
Property, it can significantly improve product yield.
It is described above, for the person of ordinary skill of the art, can be with technique according to the invention scheme and technology
Other various corresponding changes and deformation are made in design, and all these changes and deformation should all belong to the claims in the present invention
Protection domain.
Claims (10)
1. a kind of preparation method of flexible OLED panel, it is characterised in that comprise the following steps：
Glass substrate (500) step S1, is provided, flexible substrate substrate (110) is formed on the glass substrate (500), in institute
State and TFT layer (120) is formed on flexible substrate substrate (110), oled layer (130) is formed on the TFT layer (120)；
Step S2, using laser to flexible substrate substrate (110) carry out laser lift-off, make the flexible substrate substrate (110) from
Glass substrate strips down on (500)；
The glass substrate (500) is more than 96% to the transmitance of the laser employed in the step S2.
2. the preparation method of flexible OLED panel as claimed in claim 1, it is characterised in that formed in the step S1
Flexible substrate substrate (110) is polyimide substrate, and its specific forming process is：One is coated with the glass substrate (500)
Layer polyimide material, toasts to it, obtains the flexible substrate substrate (110) of polyimide material.
3. the preparation method of flexible OLED panel as claimed in claim 1, it is characterised in that employed in the step S2
The wavelength of laser is 308nm.
4. the preparation method of flexible OLED panel as claimed in claim 3, it is characterised in that used in the step S2
The energy of laser is 400-430mj.
5. the preparation method of flexible OLED panel as claimed in claim 1, it is characterised in that formed in the step S1
TFT layer (120) is used to be driven the oled layer (130), includes the TFT devices of multiple array arrangements, the TFT devices
For low-temperature polysilicon or metal-oxide.
6. the preparation method of flexible OLED panel as claimed in claim 1, it is characterised in that formed in the step S1
Oled layer (130) includes first electrode layer (131) on the TFT layer (120), located at the TFT layer (120) and first
Pixel defining layer (135) on electrode layer (131), organic function layer (132), Yi Jishe in first electrode layer (131)
In the second electrode lay (133) in pixel defining layer (135) and organic function layer (132)；
The pixel defining layer (135) crosses the pixel openings (138) of multiple array arrangements in first electrode layer (131)；Institute
Organic function layer (132) is stated in the pixel openings (138)；Organic function layer in each pixel openings (138)
(132), below corresponding first electrode layer (131) and its top corresponding to the second electrode lay (133) collectively form one
OLED (D).
7. the preparation method of flexible OLED panel as claimed in claim 6, it is characterised in that form OLED in the step S1
Layer (130) detailed process be：First electrode layer (131) is formed on the TFT layer (120), in the TFT layer (120) and
Pixel defining layer (135) is formed in first electrode layer (131), in multiple pixel openings (138) of the pixel defining layer (135)
Interior formation organic function layer (132), the second electrode lay is formed in the pixel defining layer (135) and organic function layer (132)
(133)。
8. the preparation method of flexible OLED panel as claimed in claim 6, it is characterised in that form OLED in the step S1
In layer (130), the first electrode layer (131), the second electrode lay (133) are used separately as the anode and negative electrode of OLED (D),
The first electrode layer (131) is the laminated material of indium tin oxide layer/silver layer/indium tin oxide layer.
9. the preparation method of flexible OLED panel as claimed in claim 6, it is characterised in that the organic function layer (132)
Including hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and the electron injecting layer set gradually.
10. the preparation method of flexible OLED panel as claimed in claim 6, it is characterised in that the step S1 is additionally included in
Formed after the oled layer (130), encapsulated layer is formed on the oled layer (130), to enter to the oled layer (130) of stating
Row encapsulation；
The encapsulated layer is thin-film packing structure, including the inorganic barrier layer and organic buffer layer being stacked.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710824009.8A CN107644891A (en) | 2017-09-13 | 2017-09-13 | The preparation method of flexible OLED panel |
| PCT/CN2017/108201 WO2019051940A1 (en) | 2017-09-13 | 2017-10-29 | Method for manufacturing a flexible oled panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710824009.8A CN107644891A (en) | 2017-09-13 | 2017-09-13 | The preparation method of flexible OLED panel |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107644891A true CN107644891A (en) | 2018-01-30 |
Family
ID=61110497
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710824009.8A Pending CN107644891A (en) | 2017-09-13 | 2017-09-13 | The preparation method of flexible OLED panel |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN107644891A (en) |
| WO (1) | WO2019051940A1 (en) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108321177A (en) * | 2018-02-02 | 2018-07-24 | 北京京东方显示技术有限公司 | A kind of flexible display panels, preparation method and wearable device |
| CN109087998A (en) * | 2018-07-25 | 2018-12-25 | 武汉华星光电半导体显示技术有限公司 | A kind of flexible display panels and its manufacturing method |
| CN109273515A (en) * | 2018-11-02 | 2019-01-25 | 京东方科技集团股份有限公司 | A kind of dot structure, flexible display substrates and preparation method thereof, display device |
| CN109326712A (en) * | 2018-10-23 | 2019-02-12 | 京东方科技集团股份有限公司 | A kind of preparation method of flexible base board, flexible base board and display panel |
| CN109638156A (en) * | 2018-12-10 | 2019-04-16 | 武汉华星光电半导体显示技术有限公司 | Flexible display panels and preparation method thereof |
| CN110211990A (en) * | 2018-02-28 | 2019-09-06 | 上海和辉光电有限公司 | A kind of display panel and display device |
| CN110231891A (en) * | 2019-07-24 | 2019-09-13 | 蓝思科技（长沙）有限公司 | A kind of flexible cover plate and preparation method thereof, flexible OLED display |
| CN110783253A (en) * | 2019-10-31 | 2020-02-11 | 京东方科技集团股份有限公司 | Manufacturing method of display substrate, display substrate and display device |
| CN111627964A (en) * | 2020-05-25 | 2020-09-04 | 福建华佳彩有限公司 | Novel flexible laser stripping panel and preparation method thereof |
| CN112331803A (en) * | 2020-11-04 | 2021-02-05 | 福建华佳彩有限公司 | Flexible OLED device structure and manufacturing method thereof |
| CN114122010A (en) * | 2021-11-10 | 2022-03-01 | 武汉华星光电半导体显示技术有限公司 | OLED display panel and preparation method thereof |
| WO2022226899A1 (en) * | 2021-04-29 | 2022-11-03 | 京东方科技集团股份有限公司 | Display substrate, preparation method therefor, and display apparatus |
| CN115846913A (en) * | 2022-11-25 | 2023-03-28 | 中国科学院西安光学精密机械研究所 | Image detector optical glass removing method based on short pulse laser scanning |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112467017A (en) * | 2020-11-16 | 2021-03-09 | 福建华佳彩有限公司 | Novel Mini LED flexible packaging structure and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104022123A (en) * | 2014-05-16 | 2014-09-03 | 京东方科技集团股份有限公司 | Flexible display substrate and preparation method thereof, and flexible display device |
| CN105315458A (en) * | 2014-08-01 | 2016-02-10 | 住友电木株式会社 | Process for manufacturing polyamide |
| WO2017006801A1 (en) * | 2015-07-03 | 2017-01-12 | 旭硝子株式会社 | Carrier substrate, laminate, and method for manufacturing electronic device |
| CN106711355A (en) * | 2016-12-20 | 2017-05-24 | 武汉华星光电技术有限公司 | Manufacturing method of flexible OLED (Organic Light Emitting Diode) display panels |
| CN206301797U (en) * | 2016-12-29 | 2017-07-04 | 上海天马微电子有限公司 | Display panel |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101458901B1 (en) * | 2008-04-29 | 2014-11-10 | 삼성디스플레이 주식회사 | Method of manufacturing flexible display device |
| CN106920813A (en) * | 2015-12-28 | 2017-07-04 | 昆山工研院新型平板显示技术中心有限公司 | The preparation method of flexible display |
-
2017
- 2017-09-13 CN CN201710824009.8A patent/CN107644891A/en active Pending
- 2017-10-29 WO PCT/CN2017/108201 patent/WO2019051940A1/en active Application Filing
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104022123A (en) * | 2014-05-16 | 2014-09-03 | 京东方科技集团股份有限公司 | Flexible display substrate and preparation method thereof, and flexible display device |
| CN105315458A (en) * | 2014-08-01 | 2016-02-10 | 住友电木株式会社 | Process for manufacturing polyamide |
| WO2017006801A1 (en) * | 2015-07-03 | 2017-01-12 | 旭硝子株式会社 | Carrier substrate, laminate, and method for manufacturing electronic device |
| CN106711355A (en) * | 2016-12-20 | 2017-05-24 | 武汉华星光电技术有限公司 | Manufacturing method of flexible OLED (Organic Light Emitting Diode) display panels |
| CN206301797U (en) * | 2016-12-29 | 2017-07-04 | 上海天马微电子有限公司 | Display panel |
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108321177A (en) * | 2018-02-02 | 2018-07-24 | 北京京东方显示技术有限公司 | A kind of flexible display panels, preparation method and wearable device |
| CN108321177B (en) * | 2018-02-02 | 2021-03-02 | 北京京东方显示技术有限公司 | Flexible display panel, preparation method thereof and wearable device |
| CN110211990A (en) * | 2018-02-28 | 2019-09-06 | 上海和辉光电有限公司 | A kind of display panel and display device |
| CN110211990B (en) * | 2018-02-28 | 2021-11-02 | 上海和辉光电股份有限公司 | Display panel and display device |
| CN109087998A (en) * | 2018-07-25 | 2018-12-25 | 武汉华星光电半导体显示技术有限公司 | A kind of flexible display panels and its manufacturing method |
| CN109326712A (en) * | 2018-10-23 | 2019-02-12 | 京东方科技集团股份有限公司 | A kind of preparation method of flexible base board, flexible base board and display panel |
| CN109273515B (en) * | 2018-11-02 | 2020-12-11 | 京东方科技集团股份有限公司 | Pixel structure, flexible display substrate, manufacturing method of flexible display substrate and display device |
| CN109273515A (en) * | 2018-11-02 | 2019-01-25 | 京东方科技集团股份有限公司 | A kind of dot structure, flexible display substrates and preparation method thereof, display device |
| CN109638156A (en) * | 2018-12-10 | 2019-04-16 | 武汉华星光电半导体显示技术有限公司 | Flexible display panels and preparation method thereof |
| CN109638156B (en) * | 2018-12-10 | 2020-09-01 | 武汉华星光电半导体显示技术有限公司 | Flexible display panel and manufacturing method thereof |
| CN110231891A (en) * | 2019-07-24 | 2019-09-13 | 蓝思科技（长沙）有限公司 | A kind of flexible cover plate and preparation method thereof, flexible OLED display |
| CN110783253A (en) * | 2019-10-31 | 2020-02-11 | 京东方科技集团股份有限公司 | Manufacturing method of display substrate, display substrate and display device |
| CN111627964A (en) * | 2020-05-25 | 2020-09-04 | 福建华佳彩有限公司 | Novel flexible laser stripping panel and preparation method thereof |
| CN112331803A (en) * | 2020-11-04 | 2021-02-05 | 福建华佳彩有限公司 | Flexible OLED device structure and manufacturing method thereof |
| WO2022226899A1 (en) * | 2021-04-29 | 2022-11-03 | 京东方科技集团股份有限公司 | Display substrate, preparation method therefor, and display apparatus |
| CN114122010A (en) * | 2021-11-10 | 2022-03-01 | 武汉华星光电半导体显示技术有限公司 | OLED display panel and preparation method thereof |
| CN114122010B (en) * | 2021-11-10 | 2023-06-27 | 武汉华星光电半导体显示技术有限公司 | OLED display panel and preparation method thereof |
| CN115846913A (en) * | 2022-11-25 | 2023-03-28 | 中国科学院西安光学精密机械研究所 | Image detector optical glass removing method based on short pulse laser scanning |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2019051940A1 (en) | 2019-03-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107644891A (en) | The preparation method of flexible OLED panel | |
| CN107170762B (en) | OLED display panel and preparation method thereof | |
| CN107611162A (en) | Flexible OLED display panel and preparation method thereof | |
| CN104953044B (en) | flexible OLED and preparation method thereof | |
| CN110364548A (en) | Show equipment | |
| US10658446B2 (en) | Method for manufacturing OLED backplane comprising active layer formed of first, second, and third oxide semiconductor layers | |
| CN104779269B (en) | Oled display device | |
| KR20160013489A (en) | Display device and method for manufacturing the same | |
| US20160380239A1 (en) | Method for manufacturing amoled display device and structure thereof | |
| US10243163B2 (en) | Flexible OLED display and manufacturing method thereof | |
| US9705104B2 (en) | OLED display substrate and manufacture method thereof | |
| CN104779268B (en) | Oled display device | |
| US10121830B1 (en) | OLED display panel and manufacturing method thereof | |
| CN104952879B (en) | Using the bigrid TFT substrate structure of COA technologies | |
| CN109360901B (en) | Display device, flexible OLED display panel and manufacturing method thereof | |
| WO2018049744A1 (en) | Method for manufacturing amoled pixel drive circuit | |
| WO2019090837A1 (en) | Double-sided display, and manufacturing method thereof | |
| TW201545333A (en) | Pixel structure | |
| CN102437059A (en) | Preparation method for top-gate self-aligned zinc oxide thin film transistor | |
| KR20210129294A (en) | Display device and method for manufacturing of the same | |
| US10573205B2 (en) | Flexible display device and method for manufacturing flexible display device | |
| CN104157609B (en) | The preparation method and its structure of TFT substrate | |
| CN108493354B (en) | OLED substrate and display device | |
| CN104157610A (en) | Manufacture method of oxide semiconductor TFT substrate, and structure of the oxide semiconductor TFT substrate | |
| CN207602574U (en) | Display panel and display device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180130 |
|
| RJ01 | Rejection of invention patent application after publication |