CN107634782A

CN107634782A - High-frequency front-end circuit and communicator

Info

Publication number: CN107634782A
Application number: CN201710573081.8A
Authority: CN
Inventors: 竹内壮央; 宫崎大辅; 奥田哲朗
Original assignee: Murata Manufacturing Co Ltd
Current assignee: Murata Manufacturing Co Ltd
Priority date: 2016-07-15
Filing date: 2017-07-14
Publication date: 2018-01-26
Anticipated expiration: 2037-07-14
Also published as: JP6822299B2; CN107634782B; JP2018019392A

Abstract

Invention provides a kind of even in the small-sized high-frequency front-end circuit for be also able to maintain that during CA actions low-loss signal propagation characteristicses.High-frequency front-end circuit (1) possesses：First wave filter (11), it has the first passband and is connected with antenna duplexer terminal (101)；Second wave filter (12), it is connected with antenna duplexer terminal (101) and has the second passband；Switch (21), it has common terminal (21c) and selection terminal (21a), (21b), and common terminal (21c) is connected with the first wave filter (11)；And the 3rd wave filter (13), it is connected and configured between switch (21) and input and output terminal (102) with selection terminal (21a), and the reeflectance ratio in the second passband from from antenna duplexer terminal (101) side with monomer in the case of the first wave filter (11) is big with the reflectance factor in the second passband in the case of the 3rd wave filter (13) from monomer from antenna duplexer terminal (101) side.

Description

High-frequency front-end circuit and communicator

Technical field

The present invention relates to high-frequency front-end circuit and communicator.

Background technology

For mobile phone in recent years, it is desirable to using a terminal come corresponding multiple frequencies and wireless mode (multifrequency Sectionization and more modellings).For corresponding multiband and the front-end module of more modellings, seek with not making quality deterioration to multiple Receiving and transmitting signal carries out high speed processing.Especially seek to carry out while receive and dispatch the carrier aggregation of the high-frequency signal of multiple frequency ranges.

In patent document 1, disclose and possess LB (low-frequency range) diversity antenna, MB (Mid Frequency)/HB (high band) diversity The RF systems of antenna and diversity module (with reference to Fig. 6 of patent document 1).Diversity module has to be connected with MB/HB diversity antennas Monopole throw type switch more, multiple wave filters for throwing type switch more with the monopole and connecting and put with what the plurality of wave filter was connected Big circuit.Multiple wave filters are respectively using each frequency range as passband.According to the structure, can realize while using the height of multiple frequency ranges Carrier aggregation (CA) action that frequency signal is communicated.

Patent document 1：Japanese Unexamined Patent Publication 2015-208007 publications

In the RF systems described in patent document 1, in the case where making more than two wave filters carry out CA actions, need The passband of other wave filters is set to open mode in a wave filter.Thus, in the case of CA actions are carried out, One wave filter can not also be influenceed by the impedance of other wave filters with low-loss propagation high-frequency signal.

However, if the combination for carrying out the frequency range of CA actions increases, multiple combinations be present, then need the group to each frequency range The impedance for adjusting each wave filter is closed, so each wave filter complex designing, it is difficult to make the filter characteristic of whole wave filters most Goodization.Further, since the combination for carrying out the frequency range of CA actions is more, the selection number of terminals that monopole throws type switch more is more, so Cause monopole to throw type switch maximization more.

The content of the invention

Therefore, the present invention be in order to solve above-mentioned problem and complete, and it is an object of the present invention to provide a kind of move even in carrying out CA Also the small-sized high-frequency front-end circuit and communicator of low-loss signal propagation characteristicses are able to maintain that when making.

To achieve these goals, the high-frequency front-end circuit of a mode of the invention possesses：Antenna duplexer terminal, with day Kind of thread elements connects；First input and output terminal and the second input and output terminal；First wave filter, there is the first terminal and second Terminal simultaneously has the first passband, and above-mentioned the first terminal is connected with above-mentioned antenna duplexer terminal；Second wave filter, itself and above-mentioned antenna Common terminal is connected and configured between above-mentioned antenna duplexer terminal and above-mentioned second input and output terminal, and with above-mentioned the The second different passband of one passband；Switch, it has common terminal and a multiple selection terminals, above-mentioned common terminal and above-mentioned the Two-terminal connects；And the 3rd wave filter, it is connected and configured upper with the first choice terminals in above-mentioned multiple selection terminals State between switch and above-mentioned first input and output terminal, above-mentioned first filtering from from above-mentioned antenna duplexer terminals side with monomer The reeflectance ratio in above-mentioned second passband in the case of device is above-mentioned from from above-mentioned antenna duplexer terminals side with monomer The reflectance factor in above-mentioned second passband in the case of three wave filters is big.

It is that connection is shared by antenna duplexer terminal forming the first wave filter of splitting/composing wave circuit and the second wave filter Structure in the case of, insertion loss in the second passband of the second wave filter except the second wave filter monomer insertion loss with Outside, also influenceed by the reflection characteristic observed from the antenna duplexer terminals side of the first wave filter.More specifically, from first Reflectance factor in the second passband that the common terminal side of wave filter is observed is bigger, inserting in the second passband of the second wave filter Enter loss more to reduce.

According to said structure, in the second passband of the wave filter of reeflectance ratio the 3rd in the second passband of the first wave filter Reflectance factor it is big.Here, for configuring in the 3rd wave filter of the back segment of the first wave filter, filtered compared with reflection characteristic Ripple device is more taken seriously by characteristic and attenuation characteristic, so can realize that the first wave filter and the good of the 3rd wave filter are led to Cross characteristic.Stated differently, since without configuring switch between antenna element and the first wave filter and the second wave filter, with regard to energy Enough efficiently reduce in the insertion loss in the second passband of the second wave filter by the first wave filter, the 3rd wave filter or its pair Insertion loss caused by side, so can provide one kind is also able to maintain that low-loss signal is propagated when CA actions are carried out The small-sized high-frequency front-end circuit of characteristic.

Alternatively, it is also possible to include more than two elastic waves respectively for above-mentioned first wave filter and above-mentioned 3rd wave filter Resonator, the elasticity more than above-mentioned two of above-mentioned first wave filter is formed from from above-mentioned antenna duplexer terminals side with monomer Above-mentioned second in the case of the more than one elastic wave resonator of above-mentioned antenna duplexer terminals side is configured in wave resonator Reeflectance ratio in passband is formed above-mentioned the two of above-mentioned 3rd wave filter from from above-mentioned antenna duplexer terminals side with monomer The situation of the more than one elastic wave resonator of above-mentioned antenna duplexer terminals side is configured in elastic wave resonator more than individual Under above-mentioned second passband in reflectance factor it is big.

In the wave filter being made up of multiple elastic wave resonators, for the reflectance factor observed from common terminal side and Speech, the reflectance factor closest to an elastic wave resonator of common terminal are dominance.Thereby, it is possible to efficiently reduce Damage is inserted in insertion loss in second passband of two wave filters as caused by the first wave filter, the 3rd wave filter or its both sides Consumption.

Alternatively, it is also possible to have the filtering of ladder type at least one party of above-mentioned first wave filter and above-mentioned 3rd wave filter Device structure, the more than one elastic wave resonator for being configured at above-mentioned antenna duplexer terminals side include series arm resonator and simultaneously At least one party of joint arm resonator.

Thereby, it is possible to ensure the low-loss of the first wave filter and the 3rd wave filter, and reduce by the second wave filter The insertion loss as caused by the first wave filter, the 3rd wave filter or its both sides in insertion loss in second passband.

It is longitudinally coupled alternatively, it is also possible to have at least one party of above-mentioned first wave filter and above-mentioned 3rd wave filter Filter construction.

Thereby, it is possible to the first wave filter and the 3rd wave filter is adapted to require the filter characteristic of decay reinforcing etc..

Alternatively, it is also possible to be connected for above-mentioned second input and output terminal with the second amplifying circuit, in above-mentioned second wave filter Filter circuit is not configured between above-mentioned second amplifying circuit.

The second passband and more multiple than the second passband arrowband is generally also configured and is contained in the back segment of the second wave filter Multiple wave filters corresponding to frequency range.But in the frequency range without the filter characteristic higher than the filter characteristic of the second wave filter Signal path on, in other words between the second wave filter and the second amplifying circuit, can also not have to further configuration filter Circuit.Thereby, it is possible to high-frequency front-end circuit is further minimized.

Alternatively, it is also possible to be also equipped with：3rd input and output terminal；And the 4th wave filter, itself and above-mentioned antenna duplexer Terminal is connected and configured between above-mentioned antenna duplexer terminal and above-mentioned 3rd input and output terminal, and has the 3rd passband, on State the first wave filter, above-mentioned second wave filter and above-mentioned 4th wave filter and form triplexer, above-mentioned first passband, above-mentioned second Passband and above-mentioned 3rd passband are applied to low-frequency range (LB：698-960MHz), Mid Frequency (MBa：1710-2200MHz), it is high Frequency range (HBa：2300-2690MHz), above-mentioned first passband is appointing for above-mentioned low-frequency range, above-mentioned Mid Frequency and above-mentioned high band Meaning one.

Thus, the first wave filter and the second wave filter can be applied to triplexer corresponding to LB, MBa and HBa.Therefore, It can realize in the structure comprising triplexer corresponding to LB, MBa and HBa, be also able to maintain that when CA actions are carried out The small-sized high-frequency front-end circuit of low-loss signal propagation characteristicses.

Alternatively, it is also possible to be also equipped with：3rd input and output terminal and the 4th input and output terminal；4th wave filter, It is connected with above-mentioned antenna duplexer terminal and configured between above-mentioned antenna duplexer terminal and above-mentioned 3rd input and output terminal, and With the 3rd passband；And the 5th wave filter, it is connected with above-mentioned antenna duplexer terminal and configured in above-mentioned antenna duplexer terminal Between above-mentioned 4th input and output terminal, and there is the 4th passband, it is above-mentioned first wave filter, above-mentioned second wave filter, above-mentioned 4th wave filter and above-mentioned 5th wave filter form four work devices, above-mentioned first passband, above-mentioned second passband, above-mentioned 3rd passband And above-mentioned 4th passband is applied to low-frequency range (LB：698-960MHz), Mid Frequency (MBa：1710-2200MHz), medium-high frequency Section (MHBa：2300-2400MHz), high band (HBb：2496-2690MHz), above-mentioned first passband be above-mentioned low-frequency range, on State any one of Mid Frequency, above-mentioned medium-high frequency section and above-mentioned high band.

Thus, the first wave filter and the second wave filter can be applied to four work device corresponding to LB, MBa, MHBa and HBa. Therefore, it is possible to realize in comprising the structure of four work devices corresponding to LB, MBa, MHBa and HBa, when CA actions are carried out Also it is able to maintain that the small-sized high-frequency front-end circuit of low-loss signal propagation characteristicses.

Alternatively, it is also possible to be also equipped with：3rd input and output terminal and the 4th input and output terminal；4th wave filter, It is connected with above-mentioned antenna duplexer terminal and configured between above-mentioned antenna duplexer terminal and above-mentioned 3rd input and output terminal, and With the 3rd passband；5th wave filter, its be connected with above-mentioned antenna duplexer terminal and configure above-mentioned antenna duplexer terminal with it is upper Between stating the 4th input and output terminal, and there is the 4th passband, above-mentioned first wave filter, above-mentioned second wave filter, the above-mentioned 4th Wave filter and above-mentioned 5th wave filter form four work devices, above-mentioned first passband, above-mentioned second passband, above-mentioned 3rd passband and Above-mentioned 4th passband is applied to middle low-frequency range (MLB：1475.9-2025MHz), Mid Frequency (MBb：2110-2200MHz), in High band (MHBa：2300-2400MHz or MHBb：2300-2370MHz), high band (HBb：2496-2690MHz), on State any one that the first passband is above-mentioned middle low-frequency range, above-mentioned Mid Frequency, above-mentioned medium-high frequency section and above-mentioned high band.

Thus, the first wave filter and the second wave filter can be applied to four work device corresponding to MLB, MBb, MHBa and HBb. Therefore, it is possible to realize in comprising the structure of four work devices corresponding to MLB, MB, MHB and HB, when CA actions are carried out It is able to maintain that the small-sized high-frequency front-end circuit of low-loss signal propagation characteristicses.

Alternatively, it is also possible to be also equipped with：3rd input and output terminal and the 4th input and output terminal；4th wave filter, It is connected with above-mentioned antenna duplexer terminal and configured between above-mentioned antenna duplexer terminal and above-mentioned 3rd input and output terminal, and With the 3rd passband；And the 5th wave filter, it is connected with above-mentioned antenna duplexer terminal and configured in above-mentioned antenna duplexer terminal Between above-mentioned 4th input and output terminal, and there is the 4th passband, it is above-mentioned first wave filter, above-mentioned second wave filter, above-mentioned 4th wave filter and above-mentioned 5th wave filter form four work devices, above-mentioned first passband, above-mentioned second passband, above-mentioned 3rd passband And above-mentioned 4th passband is applied to middle low-frequency range (MLB：1475.9-2025MHz), Mid Frequency (MBb：2110- 2200MHz), medium-high frequency section (MHBa：2300-2400MHz or MHBb：2300-2370MHz), high band (HBb：2496- 2690MHz), above-mentioned first passband is any one of above-mentioned middle low-frequency range, above-mentioned Mid Frequency and above-mentioned high band, above-mentioned Two passbands are above-mentioned medium-high frequency sections, on the signal path for connecting above-mentioned second wave filter and above-mentioned second amplifying circuit, are unworthy of Put filter circuit.

Thus, the first wave filter and the second wave filter can be applied to four work device corresponding to MLB, MBb, MHBa and HBb. In addition, MHBa frequency ranges included by characteristic by being met by characteristic of the second wave filter in the case of, in the frequency range Signal path on can not also configure filter circuit.Therefore, it is possible to realize comprising corresponding to MLB, MBb, MHBa and HBb In the structure of four work devices, even in the smaller high frequency for be also able to maintain that during CA actions low-loss signal propagation characteristicses Front-end circuit.

Alternatively, it is also possible to being to carry out to connect the signal path of above-mentioned second wave filter and above-mentioned second amplifying circuit Band40a (frequency acceptance bands：The path of transmitting-receiving 2300-2370MHz).

Thus, met by the MHBa Band40a included by characteristic by the second wave filter by characteristic, so Filter circuit can not also be configured on Band40a signal path.Therefore, it is possible to realizing comprising MLB, MBb, MHBa and In the structure of four work devices corresponding to HBb, low-loss signal propagation characteristicses are also able to maintain that more when CA actions are carried out Small-sized high-frequency front-end circuit.

Alternatively, it is also possible to being to carry out to connect the above-mentioned signal path of above-mentioned second wave filter and above-mentioned second amplifying circuit Band40 (frequency acceptance bands：The path of transmitting-receiving 2300-2400MHz).

Thus, met by the MHBa Band40 included by characteristic by the second wave filter by characteristic, so Filter circuit can not also be configured on Band40 signal path.Therefore, it is possible to realizing comprising MLB, MBb, MHBa and In the structure of four work devices corresponding to HBb, low-loss signal propagation characteristicses are also able to maintain that more when CA actions are carried out Small-sized high-frequency front-end circuit.

Alternatively, it is also possible to be also equipped with：3rd input and output terminal and the 4th input and output terminal；4th wave filter, It is connected with above-mentioned antenna duplexer terminal and configured between above-mentioned antenna duplexer terminal and above-mentioned 3rd input and output terminal, and With the 3rd passband；And the 5th wave filter, it is connected with above-mentioned antenna duplexer terminal, and configures in above-mentioned antenna duplexer terminal Between above-mentioned 4th input and output terminal, and there is the 4th passband, it is above-mentioned first wave filter, above-mentioned second wave filter, above-mentioned 4th wave filter and above-mentioned 5th wave filter form four work devices, above-mentioned first passband, above-mentioned second passband, above-mentioned 3rd passband And above-mentioned 4th passband is applied to middle low-frequency range (MLB：1475.9-2025MHz), Mid Frequency (MBb：2110- 2200MHz), medium-high frequency section (MHBa：2300-2400MHz or MHBb：2300-2370MHz), high band (HBb：2496- 2690MHz), above-mentioned first passband is any one of above-mentioned middle low-frequency range, above-mentioned Mid Frequency and above-mentioned medium-high frequency section, above-mentioned Second passband is above-mentioned high band, on the signal path for connecting above-mentioned second wave filter and above-mentioned second amplifying circuit, is unworthy of Put filter circuit.

Thus, the first wave filter and the second wave filter can be applied to four work device corresponding to MLB, MBb, MHBa and HBb. In addition, HBb frequency ranges included by characteristic by being met by characteristic of the second wave filter in the case of, in the frequency range Filter circuit can not also be configured on signal path.Therefore, it is possible to realize comprising corresponding to MLB, MBb, MHBa and HBb four In the structure of work device, before being also able to maintain that the smaller high frequency of low-loss signal propagation characteristicses when CA actions are carried out Terminal circuit.

Alternatively, it is also possible to being to carry out to connect the above-mentioned signal path of above-mentioned second wave filter and above-mentioned second amplifying circuit Band41 (frequency acceptance bands：The path of transmitting-receiving 2496-2690MHz).

Thus, met by the HBb Band41 included by characteristic by the second wave filter by characteristic, so Filter circuit can not also be configured on Band41 signal path.Therefore, it is possible to realize comprising MLB, MBb, MHBa and HBb In the structure of corresponding four works device, the smaller of low-loss signal propagation characteristicses is also able to maintain that when CA actions are carried out High-frequency front-end circuit.

Lean on high frequency side than above-mentioned second passband alternatively, it is also possible to be located at for above-mentioned first passband, above-mentioned first wave filter with And above-mentioned 3rd wave filter includes more than one elastic wave resonator respectively, form the said one of above-mentioned first wave filter with On elastic wave resonator be by the substrate with piezoelectric body layer respectively and form the elasticity that IDT electrode on the substrate forms Surface resonator, in above-mentioned first wave filter, using it is following any one utilized as elastic surface wave：(1) by LiNbO₃The R wave propagated in the above-mentioned piezoelectric body layer formed；(2) by LiTaO₃Propagated in the above-mentioned piezoelectric body layer formed Leakage waves；And (3) by LiNbO₃The Love wave propagated in the above-mentioned piezoelectric body layer formed.

For than the resonance point of elastic wave resonator and antiresonance point by the reflection loss in low-frequency range, in profit Used in by LiNbO₃The R wave propagated in the piezoelectric body layer of composition, by LiTaO₃The leakage propagated in the piezoelectric body layer of composition Ripple and by LiNbO₃In the case that any one for the Love wave propagated in the piezoelectric body layer of composition is as elastic surface wave, Billy is small with the situation of other elastic waves.

Therefore, it is high frequency side filter in the first wave filter, can in the case that the second wave filter is downward filter Make the reflectance factor in the second passband of the wave filter of reeflectance ratio the 3rd in the second passband of the first wave filter big.Thus, It can reduce in the insertion loss in the second passband of the second wave filter and be drawn by the first wave filter, the 3rd wave filter or its both sides The insertion loss risen.

Alternatively, it is also possible to in above-mentioned 3rd wave filter, elastic wave resonator is by SMR (Solidly Mounted Resonator：Solid-state assembly type resonator) or FBAR (Film Bulk Acoustic Resonator：Film bulk acoustic is humorous Shake device) form.

Thereby, it is possible to increase the reflectance factor of the first wave filter, and ensure the low-loss of the 3rd wave filter and lead to The steepness of band.

Lean on high frequency side than above-mentioned second passband alternatively, it is also possible to be located at for above-mentioned first passband, above-mentioned first wave filter with And above-mentioned 3rd wave filter includes more than one elastic wave resonator respectively, form the said one of above-mentioned first wave filter with On elastic wave resonator be by the substrate with piezoelectric body layer respectively and form the elasticity that IDT electrode on the substrate forms Surface resonator, in above-mentioned first wave filter, elastic wave resonator have by the interarea of a side formed with above-mentioned IDT The above-mentioned piezoelectric body layer of electrode, the bulk wave velocity of sound propagated compared with the elastic wave velocity of sound propagated in above-mentioned piezoelectric body layer are height Speed high velocity of sound supporting substrates and configuration between above-mentioned high velocity of sound supporting substrates and above-mentioned piezoelectric body layer and with above-mentioned pressure The elastic wave velocity of sound propagated in electrics layer is folded compared to propagated bulk wave velocity of sound for the velocity of sound film layer that the bass speed film of low speed is formed Structure, in above-mentioned 3rd wave filter, elastic wave resonator is made up of SMR or FBAR.

For reflectance factor in than the resonance point of elastic wave resonator and antiresonance point low-frequency range, there is sound The situation of fast film layer stack structure is bigger than the situation that elastic wave resonator is made up of SMR or FBAR.

Therefore, it is high frequency side filter in the first wave filter, can in the case that the second wave filter is downward filter Make the reflectance factor in the second passband of the wave filter of reeflectance ratio the 3rd in the second passband of the first wave filter big.Thus, It can reduce in the insertion loss in the second passband of the second wave filter and be drawn by the first wave filter, the 3rd wave filter or its both sides The insertion loss risen.In addition, the reflectance factor of the first wave filter can be increased, and ensure the low-loss of the 3rd wave filter with And the steepness of passband.

Lean on lower frequency side than above-mentioned second passband alternatively, it is also possible to be located at for above-mentioned first passband, above-mentioned first wave filter with It is following any in above-mentioned first wave filter and above-mentioned 3rd wave filter includes more than one elastic wave resonator respectively A kind of situation：(1) using by LiNbO₃The R wave propagated in the piezoelectric body layer of composition is as elastic surface wave；(2) it is elastic Wave resonator is made up of SMR；And (3) elastic wave resonator is made up of FBAR.

In the resonance point than elastic wave resonator and antiresonance point high-frequency range, the nothing as caused by leaking bulk wave is produced With ripple, the useless intensity of wave can it is following in the case of any one it is minimum：Using by LiNbO₃In the piezoelectric body layer of composition The R wave of propagation is as elastic surface wave；Elastic wave resonator is formed using SMR and forms elastic wave resonance using FBAR Device.

Therefore, it is downward filter in the first wave filter, can in the case that the second wave filter is high frequency side filter Make the reflectance factor in the second passband of the wave filter of reeflectance ratio the 3rd in the second passband of the first wave filter big.Thus, It can reduce in the insertion loss in the second passband of the second wave filter and be drawn by the first wave filter, the 3rd wave filter or its both sides The insertion loss risen.

Alternatively, it is also possible in above-mentioned 3rd wave filter, to be any one following situation：(1) elastic wave resonator has Have by the piezoelectric body layer formed with IDT electrode, the elastic wave velocity of sound with being propagated in above-mentioned piezoelectric body layer on the interarea of a side Compared to the bulk wave velocity of sound propagated for high speed high velocity of sound supporting substrates and configuration above-mentioned high velocity of sound supporting substrates with it is above-mentioned The bulk wave velocity of sound propagated between piezoelectric body layer and compared with the elastic wave velocity of sound propagated in above-mentioned piezoelectric body layer is low speed The velocity of sound film layer stack structure that bass speed film is formed；(2) using by LiTaO₃The leakage waves propagated in the piezoelectric body layer of composition are made For elastic surface wave；And (3) are utilized by LiNbO₃The Love wave propagated in the piezoelectric body layer of composition is as elastic surface wave.

Thereby, it is possible to increase the reflectance factor of the first wave filter, and the 3rd wave filter is set to turn into the folded knot of velocity of sound film layer In the case of structure, it can be ensured that the low-loss of the 3rd wave filter and good temperature characterisitic, in addition, in the 3rd wave filter Using by LiNbO₃In the case that caused Love wave is as elastic surface wave, it can be ensured that the wider band of the 3rd wave filter It is wide.

Lean on lower frequency side than above-mentioned second passband alternatively, it is also possible to be located at for above-mentioned first passband, above-mentioned first wave filter with And above-mentioned 3rd wave filter includes more than one elastic wave resonator respectively, above-mentioned first wave filter and the above-mentioned 3rd are formed The elastic wave resonator of wave filter is made up of the substrate with piezoelectric body layer and the IDT electrode formed on the substrate respectively Elastic surface wave resonator, in above-mentioned first wave filter, elastic wave resonator have by the interarea of a side formed with upper State above-mentioned piezoelectric body layer, the bulk wave sound propagated compared with the elastic wave velocity of sound propagated in above-mentioned piezoelectric body layer of IDT electrode Speed for high speed high velocity of sound supporting substrates and configuration between above-mentioned high velocity of sound supporting substrates and above-mentioned piezoelectric body layer and with The elastic wave velocity of sound propagated in above-mentioned piezoelectric body layer is compared to the velocity of sound that propagated bulk wave velocity of sound is formed for the bass speed film of low speed Film layer stack structure, in above-mentioned 3rd wave filter, (1) is using by LiTaO₃The leakage propagated in the above-mentioned piezoelectric body layer formed Ripple is as elastic surface wave or (2) using by LiNbO₃The Love wave propagated in the above-mentioned piezoelectric body layer formed is as elasticity Surface wave.

In the resonance point than elastic wave resonator and antiresonance point high-frequency range, the nothing as caused by leaking bulk wave is produced With ripple, in the case where employing velocity of sound film layer stack structure, the useless intensity of wave can Billy use LiTaO₃Leakage waves conduct Elastic surface wave utilizes LiNbO₃Love wave it is small as the situation of elastic surface wave.

Therefore, it is downward filter in the first wave filter, can in the case that the second wave filter is high frequency side filter Make the reflectance factor in the second passband of the wave filter of reeflectance ratio the 3rd in the second passband of the first wave filter big.Thus, It can reduce in the insertion loss in the second passband of the second wave filter and be drawn by the first wave filter, the 3rd wave filter or its both sides The insertion loss risen.Also, using by LiNbO in the 3rd wave filter₃Feelings of the caused Love wave as elastic surface wave Under condition, it can be ensured that the wider bandwidth of the 3rd wave filter.

Lean on lower frequency side than above-mentioned second passband alternatively, it is also possible to be located at for above-mentioned first passband, above-mentioned first wave filter with And above-mentioned 3rd wave filter includes more than one elastic wave resonator respectively, above-mentioned first wave filter and the above-mentioned 3rd are formed The elastic wave resonator of wave filter is made up of the substrate with piezoelectric body layer and the IDT electrode formed on the substrate respectively Elastic surface wave resonator, in above-mentioned first wave filter, using by LiTaO₃Propagated in the above-mentioned piezoelectric body layer formed Leakage waves are as elastic surface wave, in above-mentioned 3rd wave filter, using by LiNbO₃Passed in the above-mentioned piezoelectric body layer formed The Love wave broadcast is as elastic surface wave.

In the resonance point than elastic wave resonator and antiresonance point high-frequency range, the nothing as caused by leaking bulk wave is produced With ripple, LiTaO is being utilized₃Leakage waves as elastic surface wave in the case of, the useless intensity of wave can Billy use LiNbO₃'s Love wave is small as the situation of elastic surface wave.

Therefore, it is downward filter in the first wave filter, can in the case that the second wave filter is high frequency side filter Make the reflectance factor in the second passband of the wave filter of reeflectance ratio the 3rd in the second passband of the first wave filter big.Thus, It can reduce in the insertion loss in the second passband of the second wave filter and be drawn by the first wave filter, the 3rd wave filter or its both sides The insertion loss risen.Also, utilized in the 3rd wave filter by LiNbO₃Situation of the caused Love wave as elastic surface wave Under, it can be ensured that the wider bandwidth of the 3rd wave filter.

Lean on high frequency side than above-mentioned second passband alternatively, it is also possible to be located at for above-mentioned first passband, above-mentioned first wave filter with It is following any in above-mentioned first wave filter and above-mentioned 3rd wave filter includes more than one elastic wave resonator respectively A kind of situation：(1) using by LiNbO₃The R wave propagated in the piezoelectric body layer of composition is as elastic surface wave；(2) utilize By LiTaO₃The leakage waves propagated in the piezoelectric body layer of composition are as elastic surface wave；(3) using by LiNbO₃The pressure of composition The Love wave propagated in electrics layer is as elastic surface wave；(4) elastic wave resonator is made up of SMR；And (5) elastic wave resonance Device is made up of FBAR, in above-mentioned 3rd wave filter, elastic wave resonator have by the interarea of a side formed with IDT electrode Piezoelectric body layer, the high pitch that the bulk wave velocity of sound propagated compared with the elastic wave velocity of sound propagated in above-mentioned piezoelectric body layer is high speed Fast supporting substrates and configuration between above-mentioned high velocity of sound supporting substrates and above-mentioned piezoelectric body layer and with above-mentioned piezoelectric body layer The elastic wave velocity of sound of propagation is compared to the velocity of sound film layer stack structure that propagated bulk wave velocity of sound is formed for the bass speed film of low speed.

In the case where having velocity of sound film layer stack structure as elastic wave resonator, in the resonant frequency of elastic wave resonator 0.76 times nearby produce R wave clutter.Therefore, by making the 3rd wave filter turn into velocity of sound film layer stack structure, the first filter is made Ripple device does not turn into velocity of sound film layer stack structure, it can be ensured that the low-loss and good temperature characterisitic and increasing of the 3rd wave filter Reflectance factor in second passband of big first wave filter.

Therefore, it is high frequency side filter in the first wave filter, can in the case that the second wave filter is downward filter Reduce in the insertion loss in the second passband of the second wave filter as caused by the first wave filter, the 3rd wave filter or its both sides Insertion loss.

Lean on high frequency side than above-mentioned second passband alternatively, it is also possible to be located at for above-mentioned first passband, above-mentioned first wave filter with It is following any in above-mentioned first wave filter and above-mentioned 3rd wave filter includes more than one elastic wave resonator respectively A kind of situation：(1) using by LiNbO₃The R wave propagated in the piezoelectric body layer of composition is as elastic surface wave；(2) utilize By LiNbO₃The Love wave propagated in the piezoelectric body layer of composition is as elastic surface wave；(3) elastic wave resonator have by Piezoelectric body layer formed with IDT electrode, the institute compared with the elastic wave velocity of sound propagated in above-mentioned piezoelectric body layer on the interarea of one side The bulk wave velocity of sound of propagation is the high velocity of sound supporting substrates of high speed and configuration in above-mentioned high velocity of sound supporting substrates and above-mentioned piezoelectrics The bulk wave velocity of sound propagated between layer and compared with the elastic wave velocity of sound propagated in above-mentioned piezoelectric body layer is fast for the bass of low speed The velocity of sound film layer stack structure that film is formed；(4) elastic wave resonator is made up of SMR；And (5) elastic wave resonator is by FBAR structures Into in above-mentioned 3rd wave filter, using by LiTaO₃The leakage waves propagated in the piezoelectric body layer of composition are as elastic surface Ripple.

Utilizing LiTaO₃Leakage waves as elastic wave in the case of, the 0.76 of the resonant frequency of elastic wave resonator The clutter of R wave is produced near times.Therefore, by utilizing LiTaO in the 3rd wave filter₃Leakage waves as elastic wave, LiTaO is not utilized in first wave filter₃Leakage waves as elastic wave, can effectively increase the second passband of the first wave filter In reflectance factor.

Therefore, it is in the case that high frequency side filter, the second wave filter are downward filter in the first wave filter, can Reduce in the insertion loss in the second passband of the second wave filter as caused by the first wave filter, the 3rd wave filter or its both sides Insertion loss.

Lean on lower frequency side than above-mentioned second passband alternatively, it is also possible to be located at for above-mentioned first passband, above-mentioned first wave filter with It is following any in above-mentioned first wave filter and above-mentioned 3rd wave filter includes more than one elastic wave resonator respectively A kind of situation：(1) elastic wave resonator have by the interarea of a side piezoelectric body layer formed with IDT electrode, with above-mentioned The elastic wave velocity of sound propagated in piezoelectric body layer is the high velocity of sound supporting substrates of high speed and configuration compared to propagated bulk wave velocity of sound Between above-mentioned high velocity of sound supporting substrates and above-mentioned piezoelectric body layer and the elastic wave velocity of sound phase with being propagated in above-mentioned piezoelectric body layer The velocity of sound film layer stack structure formed than the bulk wave velocity of sound propagated for the bass speed film of low speed；(2) using by LiTaO₃Form Piezoelectric body layer in the leakage waves propagated as elastic surface wave；(3) using by LiNbO₃Propagated in the piezoelectric body layer of composition Love wave as elastic surface wave；(4) elastic wave resonator is made up of SMR；And (5) elastic wave resonator is by FBAR structures Into in above-mentioned 3rd wave filter, using by LiNbO₃The R wave propagated in the piezoelectric body layer of composition is as elastic surface Ripple.

Utilizing LiNbO₃R wave as elastic wave in the case of, the 1.2 of the resonant frequency of elastic wave resonator Higher mode is produced near times.Therefore, by utilizing LiNbO in the 3rd wave filter₃R wave as elastic wave, in the first filter LiNbO is not utilized in ripple device₃R wave as elastic wave, can effectively increase anti-in the second passband of the first wave filter Penetrate coefficient.

Therefore, it is in the case that downward filter, the second wave filter are high frequency side filter in the first wave filter, can Reduce in the insertion loss in the second passband of the second wave filter as caused by the first wave filter, the 3rd wave filter or its both sides Insertion loss.

In addition, above-mentioned first passband is located at leans on lower frequency side than above-mentioned second passband, above-mentioned first wave filter and above-mentioned the Three wave filters include more than one elastic wave resonator respectively, are any one following situations in above-mentioned first wave filter： (1) using by LiNbO₃The R wave propagated in the piezoelectric body layer of composition is as elastic surface wave；(2) elastic wave resonator has Have by the piezoelectric body layer formed with IDT electrode, the elastic wave velocity of sound with being propagated in above-mentioned piezoelectric body layer on the interarea of a side Compared to the bulk wave velocity of sound propagated for high speed high velocity of sound supporting substrates and configuration above-mentioned high velocity of sound supporting substrates with it is above-mentioned The bulk wave velocity of sound propagated between piezoelectric body layer and compared with the elastic wave velocity of sound propagated in above-mentioned piezoelectric body layer is low speed The velocity of sound film layer stack structure that bass speed film is formed；(3) using by LiTaO₃The leakage waves propagated in the piezoelectric body layer of composition are made For elastic surface wave；(4) elastic wave resonator is made up of SMR；And (5) elastic wave resonator is made up of FBAR, above-mentioned In three wave filters, using by LiNbO₃The Love wave propagated in the piezoelectric body layer of composition is as elastic surface wave.

Utilizing LiNbO₃Love wave as elastic wave in the case of, the 1.2 of the resonant frequency of elastic wave resonator Higher mode is produced near times.Therefore, by utilizing LiNbO in the 3rd wave filter₃Love wave as elastic wave, in the first filter LiNbO is not utilized in ripple device₃Love wave as elastic wave, can effectively increase anti-in the second passband of the first wave filter Penetrate coefficient.

Alternatively, it is also possible to the elasticity more than above-mentioned two for above-mentioned first wave filter of composition and above-mentioned 3rd wave filter Wave resonator is by the substrate with piezoelectric body layer respectively and to form the elastic surface wave that IDT electrode on the substrate forms humorous Shake device, in above-mentioned first wave filter and above-mentioned 3rd wave filter, using by LiTaO₃In the above-mentioned piezoelectric body layer formed The leakage waves of propagation are forming the above-mentioned IDT electrode of above-mentioned first wave filter and are forming above-mentioned 3rd filter as elastic surface wave In the above-mentioned IDT electrode of ripple device, thickness or dutycycle are different.

Utilizing LiTaO₃Leakage waves as elastic wave in the case of, in the low frequency of the resonant frequency of elastic wave resonator Side produces the clutter of R wave.On the other hand, by make in the first wave filter and the 3rd wave filter IDT electrode thickness or Dutycycle is different, and the generation frequency of the R wave clutter in the first wave filter can be made to be offset to outside the second passband.Thereby, it is possible to Effectively increase the reflectance factor in the second passband of the first wave filter, and can reduce in the second passband of the second wave filter The insertion loss as caused by the first wave filter, the 3rd wave filter or its both sides in insertion loss.

Alternatively, it is also possible to the elasticity more than above-mentioned two for above-mentioned first wave filter of composition and above-mentioned 3rd wave filter Wave resonator is by the substrate with piezoelectric body layer respectively and to form the elastic surface wave that IDT electrode on the substrate forms humorous Shake device, and in above-mentioned first wave filter and above-mentioned 3rd wave filter, elastic wave resonator has by the shape on the interarea of a side Into the above-mentioned piezoelectric body layer for having IDT electrode, the bulk wave propagated compared with the elastic wave velocity of sound propagated in above-mentioned piezoelectric body layer Velocity of sound for high speed high velocity of sound supporting substrates and configuration between above-mentioned high velocity of sound supporting substrates and above-mentioned piezoelectric body layer and with The elastic wave velocity of sound propagated in above-mentioned piezoelectric body layer is compared to the sound that propagated bulk wave velocity of sound is formed for the bass speed film of low speed Fast film layer stack structure, in above-mentioned first wave filter and above-mentioned 3rd wave filter, the thickness of above-mentioned IDT electrode, above-mentioned IDT electrode Dutycycle and above-mentioned bass speed film thickness any one is different.

In the case of using velocity of sound film layer stack structure, Rayleigh is produced in the lower frequency side of the resonant frequency of elastic wave resonator The clutter of ripple.On the other hand, by the first wave filter and the 3rd wave filter, make IDT electrode thickness or dutycycle not Together, the generation frequency of the R wave clutter in the first wave filter can be made to be offset to outside the second passband.Thereby, it is possible to effectively increase Reflectance factor in second passband of big first wave filter, and the insertion loss in the second passband of the second wave filter can be reduced In the insertion loss as caused by the first wave filter, the 3rd wave filter or its both sides.

Alternatively, it is also possible to the elasticity more than above-mentioned two for above-mentioned first wave filter of composition and above-mentioned 3rd wave filter Wave resonator is by the substrate with piezoelectric body layer respectively, forms IDT electrode on the substrate and formed in the IDT electrode On diaphragm form elastic surface wave resonator, in above-mentioned first wave filter and above-mentioned 3rd wave filter, utilize (1) By LiNbO₃The R wave propagated in the above-mentioned piezoelectric body layer formed, or (2) by LiNbO₃The above-mentioned piezoelectric body layer formed The Love wave of middle propagation is as elastic surface wave, in above-mentioned first wave filter and above-mentioned 3rd wave filter, above-mentioned IDT electrode Any one of the thickness of thickness, the dutycycle of above-mentioned IDT electrode and said protection film is different.

Utilizing LiNbO₃R wave or LiNbO₃Love wave as elastic surface wave in the case of, in elastic wave The high frequency side of the resonant frequency of resonator produces higher mode.On the other hand, in the first wave filter and the 3rd wave filter, by making The thickness of the thickness of IDT electrode, the dutycycle of IDT electrode or bass speed film is different, can make the high order in the first wave filter The generation frequency of mould is offset to outside the second passband.The reflection in the second passband thereby, it is possible to effectively increase the first wave filter Coefficient, and can reduce in the insertion loss in the second passband of the second wave filter by the first wave filter, the 3rd wave filter or Insertion loss caused by its both sides.

Alternatively, it is also possible to the elasticity more than above-mentioned two for above-mentioned first wave filter of composition and above-mentioned 3rd wave filter Wave resonator is by the substrate with piezoelectric body layer respectively and to form the elastic surface wave that IDT electrode on the substrate forms humorous Shake device, and in above-mentioned first wave filter and above-mentioned 3rd wave filter, elastic wave resonator has by the shape on the interarea of a side Into the above-mentioned piezoelectric body layer for having IDT electrode, the bulk wave propagated compared with the elastic wave velocity of sound propagated in above-mentioned piezoelectric body layer Velocity of sound for high speed high velocity of sound supporting substrates and configuration between above-mentioned high velocity of sound supporting substrates and above-mentioned piezoelectric body layer and with The elastic wave velocity of sound propagated in above-mentioned piezoelectric body layer is compared to the sound that propagated bulk wave velocity of sound is formed for the bass speed film of low speed Fast film layer stack structure, above-mentioned high velocity of sound supporting substrates are made up of silicon crystal, in above-mentioned first wave filter and above-mentioned 3rd wave filter In, the silicon crystal orientation of the thickness of above-mentioned piezoelectric body layer, the thickness of above-mentioned bass speed film and above-mentioned high velocity of sound supporting substrates Any one is different.

In the case of using velocity of sound film layer stack structure, high order is produced in the high frequency side of the resonant frequency of elastic wave resonator Mould.On the other hand, by the first wave filter and the 3rd wave filter, make the thickness of piezoelectric body layer, the thickness of bass speed film or The silicon crystal orientation of the high velocity of sound supporting substrates of person is different, and the generation frequency of the higher mode in the first wave filter can be made to lead to second With outer skew.The reflectance factor in the second passband thereby, it is possible to effectively increase the first wave filter, and can reduce by the second filter The insertion loss as caused by the first wave filter, the 3rd wave filter or its both sides in insertion loss in second passband of ripple device.

Alternatively, it is also possible to the elasticity more than above-mentioned two for above-mentioned first wave filter of composition and above-mentioned 3rd wave filter Wave resonator is by the substrate with piezoelectric body layer respectively and to form the elastic surface wave that IDT electrode on the substrate forms humorous Shake device, in above-mentioned first wave filter and above-mentioned 3rd wave filter, utilizes (1) by LiTaO₃The above-mentioned piezoelectric body layer formed The leakage waves of middle propagation, or (2) by LiNbO₃The Love wave propagated in the above-mentioned piezoelectric body layer formed is as elastic surface Ripple, in above-mentioned first wave filter and above-mentioned 3rd wave filter, the thickness of above-mentioned IDT electrode is different.

Utilizing LiTaO₃Leakage waves or LiNbO₃Love wave as elastic surface wave in the case of, in elastic wave The high frequency side of the resonant frequency of resonator produces bulk wave (useless ripple).On the other hand, by being filtered in the first wave filter and the 3rd In device, make the thickness of IDT electrode different, the generation frequency of the bulk wave in the first wave filter can be made to be offset to outside the second passband. Thereby, it is possible to effectively increase the reflectance factor in the second passband for reducing the first wave filter, and it can reduce by the second wave filter The second passband in insertion loss in the insertion loss as caused by the first wave filter, the 3rd wave filter or its both sides.

Alternatively, it is also possible to be also equipped with：First amplifying circuit, it is connected with above-mentioned first input and output terminal；And second Amplifying circuit, it is connected with above-mentioned second input and output terminal.

Thus, in the high-frequency front-end circuit comprising amplifying circuit, in the second passband that can reduce by the second wave filter The insertion loss as caused by the first wave filter, the 3rd wave filter or its both sides in insertion loss.

In addition, the communicator of the mode of the present invention possesses：RF signal processing circuits, it is to by above-mentioned antenna element The high-frequency signal of transmitting-receiving is handled；And the high-frequency front-end circuit of above-mentioned record, it believes in above-mentioned antenna element and above-mentioned RF Above-mentioned high-frequency signal is transmitted between number process circuit.

Thereby, it is possible to provide in the insertion loss in a kind of the second passband that can reduce by the second wave filter by the first filtering The small-sized communicator of device, the 3rd wave filter or insertion loss caused by its both sides.

In accordance with the invention it is possible to provide a kind of even in the propagation loss for can also be reduced during CA actions high-frequency signal Small-sized high-frequency front-end circuit or communicator.

Brief description of the drawings

Figure 1A is the circuit structure diagram of the high-frequency front-end circuit of embodiment 1.

Figure 1B is the figure illustrated to the reflection characteristic of the high-frequency front-end circuit of embodiment 1.

Fig. 2 is the figure to two wave filters are illustrated by the problem in the case of the shared connection of common terminal.

Fig. 3 A are the circuit structure diagrams of the channel splitting circuit of the variation 1 of embodiment 1.

Fig. 3 B are the circuit structure diagrams of the channel splitting circuit of the variation 2 of embodiment 1.

Fig. 3 C are the circuit structure diagrams of the channel splitting circuit of the variation 3 of embodiment 1.

Fig. 4 is the circuit structure diagram of the communicator of the variation 4 of embodiment 1.

Fig. 5 A are the circuit structure diagrams of the high-frequency front-end circuit of the variation 5 of embodiment 1.

Fig. 5 B are the circuit structure diagrams of the high-frequency front-end circuit of the variation 6 of embodiment 1.

Fig. 5 C are the circuit structure diagrams of the high-frequency front-end circuit of the variation 7 of embodiment 1.

Fig. 5 D are the circuit structure diagrams of the high-frequency front-end circuit of the variation 8 of embodiment 1.

Fig. 6 is the top view for the filter resonator for schematically showing embodiment 2 and an example of sectional view.

Fig. 7 A are the figures that the reflection characteristic in the low frequency region 1 to the high-frequency front-end circuit of embodiment 2 illustrates.

Fig. 7 B are the figures of the combination of the structure of the first wave filter and the 3rd wave filter that represent embodiment 2.

Fig. 8 A are that the bulk wave leakage in the high-frequency region 1 to the high-frequency front-end circuit of the variation 1 of embodiment 2 is said Bright figure.

Fig. 8 B be the variation 1 for representing embodiment 2 the first wave filter and the 3rd wave filter structure combination Figure.

Fig. 9 A are that the generation of the clutter in the low frequency region 2 to the high-frequency front-end circuit of the variation 2 of embodiment 2 is carried out The figure of explanation.

Fig. 9 B be the variation 2 for representing embodiment 2 the first wave filter and the 3rd wave filter structure combination Figure.

Figure 10 A are the generations of the higher mode in the high-frequency region 2 to the high-frequency front-end circuit of the variation 3 of embodiment 2 The figure illustrated.

Figure 10 B be the variation 3 for representing embodiment 2 the first wave filter and the 3rd wave filter structure combination Figure.

Figure 11 A are the figures of the deterioration of reflection loss as caused by the higher mode of the first wave filter for representing embodiment 2.

Figure 11 B are that the variation 4 for representing embodiment 2 makes the structure of the first wave filter and the 3rd wave filter different The figure of parameter.

Figure 11 C are that the variation 5 for representing embodiment 2 makes the structure of the first wave filter and the 3rd wave filter different The figure of parameter.

Figure 12 is that the variation 6 for representing embodiment 2 makes the structure of the first wave filter and the 3rd wave filter different The figure of parameter.

Figure 13 A are the circuit structure diagrams of the high-frequency front-end circuit of embodiment 3.

Figure 13 B are the circuit structure diagrams of the high-frequency front-end circuit of comparative example.

Embodiment

Hereinafter, embodiments of the present invention are described in detail using accompanying drawing.It should illustrate, implementation described below Mode represents generality or specific example.Wanted by the numerical value of following embodiment expression, shape, material, composition Element, the configuration of inscape and connected mode etc. are an examples, it is not intended to limit the present invention.On following embodiment party The inscape of independent claims is not recorded in inscape in formula, is illustrated for arbitrary inscape.In addition, accompanying drawing The ratio between size or size of shown inscape are not necessarily strict.

(embodiment 1)

[structures of 1.1 high-frequency front-end circuits]

Figure 1A is the circuit structure diagram of the high-frequency front-end circuit 1 of embodiment 1.As shown in the drawing, high-frequency front-end circuit 1 has Standby first wave filter 11, the second wave filter 12, the 3rd wave filter 13, switch 21, antenna duplexer terminal 101, input and output terminal 102 and 103.High-frequency front-end circuit 1 is that possess the first wave filter 11 and that connection is shared by antenna duplexer terminal 101 The composite elastic ripple filter of two wave filters 12.

Common terminal 101 can be for example connected with antenna element, and input and output terminal 102 and 103 can be via amplification Circuit is connected with high frequency signals circuit.

First wave filter 11 is with the first terminal and Second terminal, and the first terminal connects with antenna duplexer terminal 101 Connect, and the wave filter with the first passband.

Second wave filter 12 is connected with antenna duplexer terminal 101, and is configured in antenna duplexer terminal 101 and input and output Between terminal 103, and the wave filter with second passband different from the first passband.

First wave filter 11 and the second wave filter 12 form splitting/composing wave circuit.

Switch 21 is with common terminal 21c, selection terminal 21a (first choice terminal) and 21b, and common terminal The on-off circuit that 21c is connected with the Second terminal of the first wave filter 11.

3rd wave filter 13 is connected with selection terminal 21a (first choice terminal), and is configured defeated with inputting in switch 21 The wave filter gone out between terminal 102.

In addition, it can also be connected with the 3rd filter passband not in the selection terminal 21b (the second selection terminal) of switch 21 Same wave filter, alternatively, it is also possible to be directly connected to amplifying circuit.In addition, the quantity of the selection terminal of switch 21 can also be 3 More than.In addition, can also be logical with the 3rd wave filter with the passband of selection terminal 21b (the second selection terminal) wave filters being connected With overlapping.Even in this case, also can by switch 21 make by the high-frequency signal of the first wave filter 11 focus on via Selection terminal 21a or 21b 1 paths are propagated.

In addition, the circuit structure of the back segment (with 101 opposite side of antenna duplexer terminal) of the second wave filter 12 can also be with The circuit structure identical circuit structure of the back segment of first wave filter 11, make the second filtering alternatively, it is also possible to not configure switch Device 12 is directly connected to amplifying circuit.

Figure 1B is the figure illustrated to the reflection characteristic of the high-frequency front-end circuit 1 of embodiment 1.In the figure, it is shown with First wave filter 11 of connection and being filtered by characteristic and first for the second wave filter 12 are shared by antenna duplexer terminal 101 The reflection characteristic of the wave filter 13 of ripple device 11 and the 3rd.Here, in the high-frequency front-end circuit 1 of present embodiment, from antenna The side of common terminal 101 is with the reeflectance ratio in the passband 12H (the second passband) in the case of monomer the first wave filter 11 of observation From the side of common terminal 101 with the reflectance factor in the passband 12H (the second passband) in the case of the 3rd wave filter 13 from monomer Greatly.

In addition, the frequency relation of the first wave filter and the 3rd wave filter is not limited to as Figure 1B, the first wave filter 11 Lower frequency side and the second wave filter is high frequency side, can also the first wave filter 11 be high frequency side and the second wave filter is lower frequency side.

[1.2 the second wave filters as caused by the first wave filter, the 3rd wave filter or its two side of high-frequency front-end circuit Insertion loss minimizing effect]

Fig. 2 is the situation to two wave filters (wave filter A and wave filter B) to be shared to connection by antenna duplexer terminal Under the figure that illustrates of problem.As shown in Figure 2, it is assumed that wave filter A (passband A) and wave filter B (passband B) is to pass through antenna Common terminal shares the channel splitting circuit of connection.Consider the insertion loss of channel splitting circuit in this case.

The insertion loss of passband A in wave filter A is in addition to wave filter A insertion loss in itself, also by wave filter B Influence and deteriorate.Here, passband A of the insertion loss as caused by wave filter B by wave filter B in wave filter A insertion loss In reflection characteristic influence.More particularly, for the insertion loss as caused by wave filter B in wave filter A insertion loss For, from antenna duplexer terminals side observation filter device B's in the wave filter B before connection is shared by antenna duplexer terminal In the case of reflectance factor it is bigger, insertion loss is more reduced as caused by wave filter B in wave filter A insertion loss.

The structure for reducing the above-mentioned insertion loss as caused by the wave filter for sharing the object side connected is being applied to this reality In the case of the high-frequency front-end circuit 1 for applying mode, in order that propagated from antenna duplexer terminal 101 to input and output terminal 103 The high-frequency signal of second passband is with suppressing the insertion loss as caused by the wave filter of the object side of shared connection by, it is necessary to increase The reflectance factor of the high-frequency signal of big the second passband for wanting to propagate from antenna duplexer terminal 101 to input and output terminal 102.Change Sentence is talked about, in order to reduce in the insertion loss in the second passband of the second wave filter 12 by the first wave filter 11, the 3rd wave filter 13 or its both sides caused by insertion loss, it is necessary to increase the first wave filter being connected in series from antenna duplexer terminal 101 11 and the 3rd the second passband in the case of wave filter 13 in reflectance factor.

Also, in the case where being connected in series with multiple wave filters, close to antenna duplexer end in the wave filter being connected in series Contribution degree of the wave filter of son to the reflectance factor in the case of the wave filter that is connected in series from antenna duplexer terminals side It is high.In other words, in order to reduce in the insertion loss of the second wave filter 12 as share connection object side wave filter caused by Insertion loss, increase in the first wave filter 11 and the 3rd wave filter 13 being connected in series close to the of antenna duplexer terminal 101 Reflectance factor in second passband of one wave filter 11 can be effective.

On the other hand, it is necessary to improve the anti-of the first wave filter 11 being connected in series and the 3rd wave filter 13 as described above Penetrate characteristic, and pass through spy according to what required specification etc. ensured the first wave filter 11 for being connected in series and the 3rd wave filter 13 The filter characteristic such as property, attenuation characteristic, temperature characterisitic and bandwidth.According to filter construction, have and do not take into account reflection characteristic and upper State the situation of filter characteristic.

From the viewpoint of more than, inventors, which are found that, to take in the first wave filter 11 being connected in series and the 3rd filter In ripple device 13, preferentially increase reflectance factor in the first wave filter 11 being had a great influence to reflection characteristic, to reflection characteristic shadow Ring in less 3rd wave filter 13, it is ensured that pass through the knot of the filter characteristics such as characteristic, attenuation characteristic, temperature characterisitic and bandwidth Structure.

According to the structure of the high-frequency front-end circuit 1 of present embodiment, the reflection system in the second passband of the first wave filter 11 Number is bigger than the reflectance factor in the second passband of the 3rd wave filter 13.Here, due to for configuring the 3rd wave filter in back segment For 13, more pay attention to wave filter compared with reflection characteristic by characteristic and attenuation characteristic, so the 3rd wave filter can not be made 13 filter characteristic deterioration ground more efficiently increases first wave filter 11, switch 21 from the side of antenna duplexer terminal 101 And the reflectance factor in the 3rd the second passband in the case of wave filter 13.Thus, due to without antenna element with by the Configuration switch can just efficiently reduce second between the splitting/composing wave circuit that one wave filter 11 and the second wave filter 12 are formed Inserted in insertion loss in second passband of wave filter 12 as caused by the first wave filter 11, the 3rd wave filter 13 or its both sides Enter loss, a kind of the small-sized of low-loss signal propagation characteristicses is also able to maintain that when CA actions are carried out so can provide High-frequency front-end circuit 1.

Furthermore it is preferred that the reflectance factor in the second passband of the first wave filter 11 is more than 0.9.

In addition, in the high-frequency front-end circuit 1 of present embodiment, the filtering of connection is shared by antenna duplexer terminal 101 Device be not limited to the first wave filter 11 and the second wave filter 12 the two, more than three wave filters can also be passed through antenna Common terminal 101 shares connection.

[structure of the splitting/composing wave circuit of 1.3 variations]

Fig. 3 A are the circuit structure diagrams of the channel splitting circuit of the variation 1 of embodiment 1.In the figure, illustrate to have and be applied to The circuit structure of the triplexer of the splitting/composing wave circuit of the high-frequency front-end circuit of present embodiment.

The high-frequency front-end circuit of this variation possesses the LB being connected with antenna duplexer terminal 101 as splitting/composing wave circuit (low-frequency range：698-960MHz) wave filter 11L, MBa (Mid Frequencies：1710-2200MHz) wave filter 11M1 and HBa (high frequencies Section：2300-2690MHz) wave filter 11H1.

In other words, the high-frequency front-end circuit of variation 1 is in addition to the first wave filter 11 and the second wave filter 12, also Possess and be connected with antenna duplexer terminal 101, and the 4th wave filter with the 3rd passband.Here, the first filtering of embodiment 1 Device 11 equivalent to LB wave filter 11L, MBa wave filter 11M1 and HBa wave filters 11H1 in this variation any one.

Fig. 3 B are the circuit structure diagrams of the channel splitting circuit of the variation 2 of embodiment 1.In the figure, illustrate to have and be applied to The circuit structure of four work devices of the splitting/composing wave circuit of the high-frequency front-end circuit of present embodiment.

The high-frequency front-end circuit of this variation possesses the LB being connected with antenna duplexer terminal 101 as splitting/composing wave circuit (low-frequency range：698-960MHz) wave filter 11L, MBa (Mid Frequencies：1710-2200MHz) wave filter 11M1, MHBa (medium-high frequencies Section：2300-2400MHz) wave filter 11MH1 and HBb (medium-high frequency sections：2496-2690MHz) wave filter 11H2.

In other words, the high-frequency front-end circuit of variation 2 is in addition to the first wave filter 11 and the second wave filter 12, also Possess and be connected with antenna duplexer terminal 101, and the 4th wave filter with the 3rd passband, the 5th filtering with the 4th passband Device.Here, the first wave filter 11 of embodiment 1 equivalent to LB wave filter 11L, MBa wave filters 11M1 in this variation, Any one of MHBa wave filter 11MH1 and HBb wave filters 11H2.

Fig. 3 C are the circuit structure diagrams of the channel splitting circuit of the variation 3 of embodiment 1.In the figure, illustrate to have and be applied to The circuit structure of four work devices of the splitting/composing wave circuit of the high-frequency front-end circuit of present embodiment.

The high-frequency front-end circuit of this variation possesses what is be connected with antenna duplexer terminal 101 as splitting/composing wave circuit MLB (middle low-frequency ranges：1475.9-2025MHz) wave filter 11L1, MBb (Mid Frequency：2110-2200MHz) wave filter 11M2, MHBa (medium-high frequency sections：2300-2400MHz or 2300-2370MHz) wave filter 11MH1 and HBb (medium-high frequency section： 2496-2690MHz) wave filter 11H2.

In other words, the high-frequency front-end circuit of variation 3 is in addition to the first wave filter 11 and the second wave filter 12, also Possess be connected with antenna duplexer terminal 101 and the 4th wave filter with the 3rd passband and with the 4th passband the 5th filtering Device.Here, the first wave filter 11 of embodiment 1 equivalent to MLB wave filter 11L1, MBb wave filters 11M2 in this variation, Any one of MHBa wave filter 11MH1 and HBb wave filters 11H2.

[structure of the high-frequency front-end circuit of 1.4 variations 4]

Fig. 4 is the circuit structure diagram of the communicator 3 of the variation 4 of embodiment 1.In the figure, it is shown with this embodiment party The communicator 3 of formula.Communicator 3 by variation 4 high-frequency front-end circuit 2 and the structure of high frequency signals circuit (RFIC) 40 Into.

High-frequency front-end circuit 2 possesses antenna duplexer terminal 101, channel splitting circuit 10 and 14, switch 21 and 22, filter circuit 15 And amplifying circuit 30.

Channel splitting circuit 10 is connected with antenna duplexer terminal 101, and by low pass filter 10A (passbands：699-960MHz) with And high-pass filter 10B (passbands：1475.9-2690MHz) form.

Channel splitting circuit 14 is connected with high-pass filter 10B, and is filtered by MLB wave filters 11A (1475.9-2025MHz), MBb Ripple device 11B (2110-2200MHz), MHBa wave filters 11C (2300-2400MHz or 2300-2370MHz) and HBb filters Ripple device 11D (2496-2690MHz) is formed.

Switch 21 is formed by switching 21A, 21C and 21D.Switch 22 is formed by switching 22A, 22B, 22C and 22D.

Filter circuit 15 is made up of wave filter 13a, 13b, 13c, 13d, 13e, 13f, 13g, 13h, 13j and 13k.

Amplifying circuit is made up of LNA31,32,33,34,35 and 36.

The frequency band of high-frequency signal is divided into 4 frequency band groups by channel splitting circuit 14.More specifically, MLB wave filters 11A makes Ba (((((frequency range e) signal is by the way that MBb wave filters 11B makes Bp by frequency range d) and Be by frequency range c), Bd by frequency range b), Bc by frequency range a), Bb (frequency range p) signal is by the way that MHBa wave filters 11C makes Bf, and ((frequency range g) signal passes through HBb wave filters by frequency range f) and Bg 11D makes Bh, and (((frequency range k) signal passes through by frequency range j) and Bk by frequency range h), Bj.

Switch 21A common terminal is connected with MLB wave filters 11A, each to select terminal and wave filter 13a (Ba), 13b (Bb), 13c (Bc), 13d/13e (Bd/Be) connection.

Switch 21C common terminal is connected with MHBa wave filters 11C, each to select terminal and wave filter 13f (Bf) and 13g (Bg) connect.

Switch 21D common terminal is connected with HBb wave filters 11D, each to select terminal and wave filter 13h (Bh), 13j (Bj) And 13k (Bk) connections.

Switch 22B common terminal is connected with LNA31, each to select terminal to connect with MBb wave filters 11B and wave filter 13d Connect.

Switch 22A common terminal is connected with LNA32, each to select terminal to be connected with wave filter 13c, 13b and 13e.

Switch 22D common terminal is connected with LNA33, each to select terminal to be connected with wave filter 13k, 13h and 13j.

Switch 22C common terminal is connected with LNA34, each to select terminal to be connected with wave filter 13f and 13g.

In addition, MLB wave filters 11A passband (1475.9-2025MHz) is than wave filter 13a (Ba), 13b (Bb), 13c (Bc), 13d/13e (Bd/Be) each passband is wide, and includes each passband.MBb wave filters 11B (2110-2200MHz) is included Bp each passband.MHBa wave filters 11C (2300-2400MHz or 2300-2370MHz) than wave filter 13f (Bf) and 13g (Bg) each passband is wide, and includes each passband.HBb wave filters 11D (2496-2690MHz) than wave filter 13h (Bh), 13j (Bj) and 13k (Bk) each passband are wide, include each passband.

High frequency signals circuit (RFIC) 40 is connected with the lead-out terminal of LNA31~36, by down coversion etc. to from day The high-frequency received signal that kind of thread elements inputs via the reception signal path of each frequency range carries out signal transacting, and by the signal transacting institute The reception signal of generation is exported to the base band signal process circuit of back segment.RF signal processing circuits 40 are, for example, RFIC.It is in addition, high The frequency range used in of audio signalprocessing circuit (RFIC) 40, by control signal S1A, S1C, S1D, S2A, S2B, S2C and S2D exports to switch 21A, 21C, 21D, 22A, 22B, 22C and 22D respectively.Thus, the company in switching signal path is respectively switched Connect.

21A, 21C and 21D are switched in the communicator 3 with said structure, such as by switching, from MLB (1475.9-2025MHz), MBb (2110-2200MHz), MHBa (2300-2400MHz or 2300-2370MHz) and HBb (2496-2690MHz) selects 1 frequency range respectively, thus allows for CA actions.

Here, the structure of the high-frequency front-end circuit 1 of embodiment 1 can be applied to the high-frequency front-end circuit of this variation 2.In other words, the combination as the first wave filter 11 and the 3rd wave filter 13 in high-frequency front-end circuit 1, can be enumerated (1) MLB wave filters 11A and wave filter 13a (Ba)；(2) MLB wave filters 11A and wave filter 13b (Bb)；(3) MLB wave filters 11A and wave filter 13c (Bc)；(4) MLB wave filters 11A and wave filter 13d/13e (Bd/Be)；(5) MHBa wave filters 11C And wave filter 13f (Bf)；(6) MHBa wave filters 11C and wave filter 13g (Bg)；(7) HBb wave filters 11D and wave filter 13h(Bh)；(8) HBb wave filters 11D and wave filter 13j (Bj), HBb wave filters 11D and wave filter 13k (Bk).In addition, As the second wave filter 12, MLB wave filter 11A, MBb wave filter 11B, MHBa wave filter 11C and HBb wave filters can be enumerated 11D's is at least one.

For example, the combination as the first wave filter 11 and the 3rd wave filter 13 have selected (1) MLB wave filters 11A with And wave filter 13a (Ba), in the case of have selected MBb wave filters 11B as the second wave filter 12, by MLB wave filters 11A's Reflectance factor in 2110-2200MHz (MBb wave filters 11B passband) is set as the 2110-2200MHz than wave filter 13a Reflectance factor in (MBb wave filters 11B passband) is much smaller.

In addition, for example, it have selected (1) MLB wave filters in the combination as the first wave filter 11 and the 3rd wave filter 13 11A and wave filter 13a (Ba), MBb wave filter 11B, MHBa wave filters 11C and HBb are have selected as the second wave filter 12 In the case of tri- wave filters of wave filter 11D, by MLB wave filters 11A 2110-2200MHz, (MBb wave filters 11B's is logical Band), 2300-2400MHz or 2300-2370MHz (MHBa wave filters 11C passband) and 2496-2690MHz (HBb Wave filter 11D passband) in reflectance factor be set as 2110-2200MHz, 2300-2400MHz than wave filter 13a or Reflectance factor in person 2300-2370MHz and 2496-2690MHz is big.

According to more than structure, even if carry out CA actions frequency range increasing number, by by channel splitting circuit 14 and filter The relation of the reflection characteristic of wave circuit 15 is set as turning into the first wave filter 11 and the 3rd wave filter 13 in embodiment 1 The relation of reflection characteristic, such as whole CA that can be with 3GPP prescribed by standard are combined correspondingly.In addition, by being set with partial wave The relation of the reflection characteristic of circuit 14 and filter circuit 15, it can easily change frequency corresponding with the filter circuit of back segment 15 Section.Therefore, it is possible to provide each destination the module of optimal band structure with the circuit design simplified.

In addition, in this variation, exemplified with high-frequency signal of the reception from antenna element and it is delivered at high-frequency signal Manage circuit 40 reception high-frequency front-end circuit but it is also possible to be send with or transmitting-receiving high-frequency front-end circuit.It is being In the case of the high-frequency front-end circuit of transmission, amplifying circuit 30 is made up of power amplifier.In addition, it is being the high frequency of transmitting-receiving In the case of front-end circuit, filter circuit 15 is made up of the duplexer for being assigned to each frequency range.

[structure of the high-frequency front-end circuit of 1.5 variations 5]

Fig. 5 A are the high-frequency front-end circuit 2A of the variation 5 of embodiment 1 circuit structure diagrams.Before the high frequency of this variation For terminal circuit 2A compared with the high-frequency front-end circuit 2 of variation 4, the point for not configuring wave filter 13g and 13k is different.Hereinafter, it is right In the high-frequency front-end circuit 2A of this variation, pair omitted the description with the identical point of high-frequency front-end circuit 2 of variation 4, with difference Illustrated centered on point.

In high-frequency front-end circuit 2A, in the case where MHBa wave filters 11C passband is 2300-2370MHz, for example, With configuring the B40a in MHBa wave filters 11C back segment (equivalent to Bg：Passband 2300-2370MHz) passband it is consistent.It is another Aspect, it is for example corresponding with B30 (passband 2350-2360MHz) to be configured at the wave filter 13f of MHBa wave filters 11C back segment, bag It is contained in MHBa wave filters 11C passband 2300-2370MHz.Here, because B40a signal is filtered by characteristic by MHBa Device 11C's is met by characteristic, so need not configure wave filter 13g on B40a signal path.Wrapped therefore, it is possible to realize In structure containing channel splitting circuit corresponding to MLB, MBb, MHBa and HBb 14 (four work devices), also can when CA actions are carried out Enough turn into the smaller high-frequency front-end circuit of low-loss signal propagation characteristicses.

In addition, in high-frequency front-end circuit 2A, in the case that MHBa wave filters 11C passband is 2300-2400MHz, example Such as, be configured at MHBa wave filters 11C back segment B40 (equivalent to Bg：Passband 2300-2400MHz) passband it is consistent.Separately On the one hand, it is for example corresponding with B30 (passband 2350-2360MHz) to be configured at the wave filter 13f of MHBa wave filters 11C back segment, It is contained in MHBa wave filters 11C passband 2300-2400MHz.Here, because B40 signal is filtered by characteristic by MHBa Device 11C's is met by characteristic, so need not configure wave filter 13g on B40 signal path.Wrapped therefore, it is possible to realize In structure containing channel splitting circuit corresponding to MLB, MBb, MHBa and HBb 14 (four work devices), also can when CA actions are carried out Enough turn into the smaller high-frequency front-end circuit of low-loss signal propagation characteristicses.

In addition, in high-frequency front-end circuit 2A, HBb wave filters 11D passband is 2496-2690MHz, with being configured at HBb The B41 of wave filter 11D back segment passband is consistent.On the other hand, the wave filter 13h examples of HBb wave filters 11D back segment are configured at It is such as corresponding with B38 (passband 2570-2620MHz), it is contained in HBb wave filters 11D passband 2496-2690MHz.In addition, match somebody with somebody It is for example corresponding with B7 (passband 2620-2690MHz) to be placed in the wave filter 13j of HBb wave filters 11D back segment, is contained in HBb filters Ripple device 11D passband 2496-2690MHz.Here, because B41 signal by characteristic passes through spy by HBb wave filters 11D Sexual satisfaction, so wave filter 13k need not be configured on B41 signal path.Therefore, it is possible to realize comprising MLB, MBb, MHBa And in the structure of channel splitting circuit 14 corresponding to HBb (four work devices), it can also turn into low-loss when CA actions are carried out The smaller high-frequency front-end circuit of signal propagation characteristicses.

[structure of the high-frequency front-end circuit of 1.6 variations 6]

Fig. 5 B are the high-frequency front-end circuit 2B of the variation 6 of embodiment 1 circuit structure diagrams.Before the high frequency of this variation For terminal circuit 2B compared with the high-frequency front-end circuit 2 of variation 4, the point for being attached with transmission (Tx) bypass path is different.Hereinafter, it is right In the high-frequency front-end circuit 2B of this variation, pair omitted the description with the identical point of high-frequency front-end circuit 2 of variation 4, with difference Illustrated centered on point.

High-frequency front-end circuit 2B possesses antenna duplexer terminal 101, channel splitting circuit 10 (low pass filter 10A, high-pass filter 10B) and 14 (MLB wave filter 11A, MBb wave filter 11B, MHBa wave filter 11C, HBb wave filter 11D), switch 21 (switch 21E, switch 21C, switch 21D) and 22 (not shown), filter circuit 15 (wave filter 13a-13k) and amplifying circuit 30 are (not Diagram).

Switch 21 is formed by switching 21E, 21C and 21D.

Switch 21E common terminal is connected with MLB wave filters 11A, each to select terminal with sending (Tx) bypass path, filtering Device 13a (Ba), 13b (Bb), 13c (Bc), 13d/13e (Bd/Be) connections.

The path that (Tx) bypass path is the transmission signal for propagating the frequency range for belonging to MLB/LMB is sent, for example, being to propagate frequency Section a, frequency range b, frequency range c, frequency range d and frequency range e at least one range of transmission signal path.

In addition, MLB wave filters 11A passband (1475.9-2025MHz) ratio is passed in (Tx) bypass path is sent Transmission passband and wave filter 13a (Ba), 13b (Bb), 13c (Bc), 13d/13e (Bd/Be) each passband broadcast are wide, and comprising Each passband.MBb wave filters 11B (2110-2200MHz) includes Bp each passband.MHBa wave filter 11C (2300- 2400MHz or 2300-2370MHz) it is wider than wave filter 13f (Bf) and 13g (Bg) each passband, and include each passband. HBb wave filters 11D (2496-2690MHz) is wider than wave filter 13h (Bh), 13j (Bj) and 13k (Bk) each passband, and wraps Containing each passband.

According to said structure, it can use and link transmission (Tx) bypass path, switch 21E, MLB wave filter 11A, high pass filter The signal path of ripple device 10B and antenna duplexer terminal 101 is as transmission signal path.

According to said structure, the transmission for belonging to MLB/LMB can be also made by the antenna being connected with antenna duplexer terminal 101 Signal and the reception signal progress CA actions for belonging to MB, MHB, HB.In other words, the antenna being connected with antenna duplexer terminal 101 Serve not only as receiving and use, can be used as the antenna of transmit-receive sharing to use.

In addition, in this variation, connect to send (Tx) bypass path with switching the switch 21E of the frequency range in MLB/LMB The structure connect, but can also be to send the frequency in switch 21C or switching HB of (Tx) bypass path with switching the frequency range in MHB The structure of the switch 21D connections of section.

[structure of the high-frequency front-end circuit of 1.7 variations 7]

Fig. 5 C are the high-frequency front-end circuit 2C of the variation 7 of embodiment 1 circuit structure diagrams.Before the high frequency of this variation Terminal circuit 2C is attached with the point in transmission (Tx) path comprising transmitting filter compared with the high-frequency front-end circuit 2 of variation 4 It is different.Hereinafter, for the high-frequency front-end circuit 2C of this variation, pair omitted with the identical point of high-frequency front-end circuit 2 of variation 4 Illustrate, illustrated centered on difference.

High-frequency front-end circuit 2C possesses antenna duplexer terminal 101, channel splitting circuit 10 (low pass filter 10A, high-pass filter 10B) and 14 (MLB wave filter 11A, MBb wave filter 11B, MHBa wave filter 11C, HBb wave filter 11D), switch 21 (switch 21F, switch 21C, switch 21D) and 22 (not shown), filter circuit 15 (wave filter 13a-13k and transmitting filter 13t) with And amplifying circuit 30 (not shown).

Switch 21 is formed by switching 21F, 21C and 21D.

Switch 21F common terminal is connected with MLB wave filters 11A, each to select terminal with sending (Tx) path, wave filter 13a (Ba), 13b (Bb), 13c (Bc), 13d/13e (Bd/Be) connections.Switch 21F be can simultaneously with common terminal and two The switch of selection terminal connection above.

Transmitting filter 13t is configured with (Tx) path is sent.

In addition, MLB wave filters 11A passband (1475.9-2025MHz) is than transmitting filter 13t, wave filter 13a (Ba), 13b (Bb), 13c (Bc), 13d/13e (Bd/Be) each passband are wide, and include each passband.MBb wave filters 11B (2110-2200MHz) includes Bp each passband.MHBa wave filters 11C (2300-2400MHz or 2300-2370MHz) compares Wave filter 13f (Bf) and 13g (Bg) each passband are wide, and include each passband.HBb wave filters 11D (2496-2690MHz) Each passband than wave filter 13h (Bh), 13j (Bj) and 13k (Bk) is wide, and includes each passband.

According to said structure, (Tx) path, switch 21F, MLB wave filter 11A, high pass filter can be sent using link simultaneously The transmission signal path of ripple device 10B and antenna duplexer terminal 101 and link antenna duplexer terminal 101, high-pass filter 10B, MLB wave filters 11A, the reception signal path of any one for switching 21F and wave filter 13a~13e.Thus, also can be Received and dispatched simultaneously in similar frequency bands.Use in addition, serving not only as receiving with the antenna that antenna duplexer terminal 101 is connected, also can Used as the antenna of transmit-receive sharing.

It is further assumed that also different from the high-frequency front-end circuit 2C high-frequency front-end circuit in above-mentioned transmission (Tx) path connects Structure, in this case, by the two systems of high-frequency front-end circuits different with this high-frequency front-end circuit 2C, can carry out It is so-called based on two up sending actions based on two antennas.

In addition, in this variation, it is connected for transmission (Tx) path with switching the switch 21F of the frequency range in MLB/LMB Structure, but can also be the switch for sending the frequency range in switch 21C or switching HB of (Tx) path with switching the frequency range in MHB The structure of 21D connections.

[structure of the high-frequency front-end circuit of 1.8 variations 8]

Fig. 5 D are the high-frequency front-end circuit 2D of the variation 8 of embodiment 1 circuit structure diagrams.Before the high frequency of this variation Terminal circuit 2D is attached with the point in transmitting-receiving (Tx/Rx) path comprising duplexer compared with the high-frequency front-end circuit 2 of variation 4 It is different.Hereinafter, for the high-frequency front-end circuit 2D of this variation, pair omitted with the identical point of high-frequency front-end circuit 2 of variation 4 Illustrate, illustrated centered on difference.

High-frequency front-end circuit 2D possesses antenna duplexer terminal 101, channel splitting circuit 10 (low pass filter 10A, high-pass filter 10B) and 14 (MLB wave filter 11A, MBb wave filter 11B, MHBa wave filter 11C, HBb wave filter 11D), switch 21 (switch 21G, switch 21C, switch 21D) and 22 (not shown), filter circuit 15 (wave filter 13a-13k) and amplifying circuit 30 are (not Diagram).

Switch 21 is formed by switching 21G, 21C and 21D.

Switch 21G common terminal is connected with MLB wave filters 11A, each to select terminal and transmitting-receiving (Tx/Rx) path, filtering Device 13a (Ba), 13b (Bb), 13c (Bc), 13d/13e (Bd/Be) connections.

The duplex being made up of transmitting filter 13t1 and receiving filter 13r1 is configured with (Tx/Rx) path is received and dispatched Device.

In addition, duplex of the MLB wave filters 11A passband (1475.9-2025MHz) than being configured at transmitting-receiving (Tx/Rx) path Device, wave filter 13a (Ba), 13b (Bb), 13c (Bc), 13d/13e (Bd/Be) each passband are wide, and include each passband.MBb Wave filter 11B (2110-2200MHz) includes Bp each passband.MHBa wave filters 11C (2300-2400MHz or 2300- Each passband 2370MHz) than wave filter 13f (Bf) and 13g (Bg) is wide, and includes each passband.HBb wave filters 11D (2496-2690MHz) is wider than wave filter 13h (Bh), 13j (Bj) and 13k (Bk) each passband, and includes each passband.

According to said structure, above-mentioned transmitting-receiving (Tx/Rx) path, which can use, links switch 21G, MLB wave filter 11A, high pass Wave filter 10B and antenna duplexer terminal 101 signal path.Thus, can also receive and dispatch simultaneously on above-mentioned transmitting-receiving (Tx/Rx) road The transmission signal and reception signal for the similar frequency bands propagated in footpath.In addition, by the antenna being connected with antenna duplexer terminal 101 not Only use as receiving, can be used as the antenna of transmit-receive sharing to use.

Further, it is assumed that above-mentioned transmitting-receiving (Tx/Rx) path is high frequency front-end electricity also different from high-frequency front-end circuit 2D The structure of road connection, in this case, the two can be by high-frequency front-end circuits different with this high-frequency front-end circuit 2D System, carry out so-called based on two up sending actions based on two antennas.

In addition, in this variation, it is connected for transmitting-receiving (Tx/Rx) path with switching the switch 21G of the frequency range in MLB/LMB Structure, but can also be transmitting-receiving (Tx/Rx) path with switch MHB in frequency range switch 21C or switch HB in frequency range Switch 21D connections structure.

(embodiment 2)

In embodiment 1, pass through antenna duplexer terminal in the first wave filter 11 and the second wave filter 12 to preferably using Share in the structure that connection, the first wave filter 11 and the 3rd wave filter 13 are connected in series via switching, preferentially to reflection characteristic Influence to increase reflectance factor in the first big wave filter 11, ensure to pass through in reflection characteristic is influenceed in the 3rd small wave filter 13 The situation of the structure of the filter characteristics such as characteristic, attenuation characteristic, temperature characterisitic and bandwidth is illustrated.In present embodiment In, consider from above-mentioned viewpoint, illustrate the combination of the structure of the first wave filter 11 and the 3rd wave filter 13.

In the present embodiment, the first wave filter 11 and the 3rd wave filter 13 are made up of elastic wave resonator, can also Filter construction with ladder type.In this case, it is configured at the more than one elastic wave resonance of the side of antenna duplexer terminal 101 Device includes at least one party of series arm resonator and parallel arm resonator.Thereby, it is possible to ensure the first wave filter 11 and The low-loss of three wave filters 13, and reduce in the insertion loss in the second passband of the second wave filter 12 by the first wave filter 11st, insertion loss caused by the 3rd wave filter 13 or its both sides.

In addition, the first wave filter 11 and the 3rd wave filter 13 can also have longitudinally coupled filter construction.By This, can make the first wave filter 11 and the 3rd wave filter 13 adapt to require the filter characteristic of decay reinforcing etc..

In addition, the structure as elastic wave resonator, illustrates elastic surface wave (SAW：Surface Acoustic Wave) Resonator, SMR (Solidly Mounted Resonator) and the FBAR for having used BAW (Bulk Acoustic Wave) (Film Bulk Acoustic Resonator) etc..

Here, the first wave filter 11 and the 3rd wave filter 13 include more than two elastic wave resonators respectively, from The side of antenna duplexer terminal 101 is formed in the elastic wave resonator more than above-mentioned two of first wave filter 11 with monomer observation and configured Reflectance factor in the second passband in the case of the more than one elastic wave resonator of the side of antenna duplexer terminal 101 also may be used With elastic the wave resonance more than above-mentioned two than being formed the 3rd wave filter 13 from from the side of antenna duplexer terminal 101 with monomer The reflection being configured in device in the second passband in the case of the more than one elastic wave resonator of the side of antenna duplexer terminal 101 Coefficient is big.

It is anti-for being observed from the side of antenna duplexer terminal 101 in the wave filter being made up of multiple elastic wave resonators Penetrate for coefficient, the reflectance factor closest to an elastic wave resonator of antenna duplexer terminal 101 is dominance.Thus, Can effectively reduce in the insertion loss in the second passband of the second wave filter 12 by the first wave filter 11, the 3rd wave filter 13 or Insertion loss caused by its both sides of person.

Hereinafter, illustrate and reflectance factor is increased by the first wave filter 11 of leading portion, improved by the 3rd wave filter of back segment Pass through the combination of the specific structure of the filter characteristics such as characteristic, attenuation characteristic, temperature characterisitic and bandwidth.

First, an example of the structure of elastic wave resonator is illustrated.

[2.1 elastic wave resonator structure]

Fig. 6 is the top view for the filter resonator for schematically showing embodiment 2 and an example of sectional view. In fig. 6 it is shown that the elastic wave resonator (series arm resonator and parallel arm resonator) of present embodiment is, for example, bullet Property surface wave (SAW：Surface Acoustic Wave) resonator situation.In addition, in the figure, exemplify expression and form The plane signal of the structure of an elastic wave resonator in multiple resonators of first wave filter 11 and the 3rd wave filter 13 Figure and diagrammatic cross-section.In addition, the elastic wave resonator shown in Fig. 6 is the typical knot for illustrating above-mentioned multiple resonators The example of structure, form radical, length of the electrode finger of electrode etc. and be not limited to this.

Each resonator of first wave filter 11 and the 3rd wave filter 13 by the substrate 80 with piezoelectric body layer 83, with comb IDT (the InterDigital Transducer of shape shape：Interdigital transducer) electrode 71a and 71b composition.

As illustrated in the top plan view of fig. 6, on piezoelectric body layer 83 formed with a pair of mutually opposing IDT electrode 71a and 71b.IDT electrode 71a refers to 172a by the multiple electrodes being parallel to each other and connects the bus electrode 171a structures that multiple electrodes refer to 172a Into.In addition, IDT electrode 71b refers to 172b by the multiple electrodes being parallel to each other and connects the bus electrode that multiple electrodes refer to 172b 171b is formed.Multiple electrodes refer to 172a and 172b and formed along the direction orthogonal with X-direction.

In addition, as shown in Fig. 7 sectional view, multiple electrodes refer to 172a and 172b and by bus electrode 171a and 171b structures Into IDT electrode 71 be to be close to the stepped construction of layer 72 and main electrode layer 73.

It is for improving piezoelectric body layer 83 and the layer of the close property of main electrode layer 73, can for example make as material to be close to layer 72 Use Ti.The thickness for being close to layer 72 is, for example, 10nm or so.

For main electrode layer 73, as material, such as the Al containing 1% Cu can be used.The film of main electrode layer 73 Thickness is, for example, 130nm or so.

Diaphragm 84 is formed as covering IDT electrode 71a and 71b.Diaphragm 84 is protection main electrode layer 73 to prevent outside Layer that environment influences, for the purpose of adjusting frequency-temperature characteristic and improve moisture-proof etc., for example, being based on silica Want the film of composition.The thickness of diaphragm 84 is, for example, 30nm or so.

In addition, the material that composition is close to layer 72, main electrode layer 73 and diaphragm 84 is not limited to above-mentioned material.Separately Outside, IDT electrode 71 may not be above-mentioned stepped construction.IDT electrode 71 is such as can be as Ti, Al, Cu, Pt, Au, Ag, Pd Metal or alloy is formed, alternatively, it is also possible to be made up of the multiple layered products being made up of above-mentioned metal or alloy.Separately Outside, diaphragm 84 can not also be formed.

Then, the stepped construction of substrate 80 is illustrated.

As shown in Fig. 6 hypomere, substrate 80 possesses high velocity of sound supporting substrates 81, bass speed film 82 and piezoelectric body layer 83, And (velocity of sound film layer is folded with the structure for stacking gradually high velocity of sound supporting substrates 81, bass speed film 82 and piezoelectric body layer 83 form Structure).

Piezoelectric body layer 83 for example cuts X by 42 ° of Y and propagates LiTaO₃Piezoelectric monocrystal or piezoelectric ceramics (are by will be with X-axis Centered on axle have rotated the monocrystalline lithium tantalate or ceramics, elastic surface wave that 42 ° of axle forms as the face cut-out of normal from Y-axis The monocrystalline or ceramics propagated along X-direction) form.In this case, elastic wave resonator is used as elastic wave by the use of leakage waves.

In addition, piezoelectric body layer 83 for example cuts X by 128 ° of Y propagates LiNbO₃Piezoelectric monocrystal or piezoelectric ceramics are formed. In this case, elastic wave resonator is used as elastic wave by the use of R wave.

In addition, piezoelectric body layer 83 for example propagates LiNbO by Y cuttings X₃Piezoelectric monocrystal or piezoelectric ceramics are formed.In the feelings Under condition, elastic wave resonator is used as elastic wave by the use of Love wave.

In addition, the monocrystal material of piezoelectric body layer 83, cutting angle, stepped construction (can lead to according to the requirement style of wave filter Cross the filter characteristics such as characteristic, attenuation characteristic, temperature characterisitic and bandwidth) etc. properly select.

High velocity of sound supporting substrates 81 are the substrates for supporting bass speed film 82, piezoelectric body layer 83 and IDT electrode 71.High velocity of sound Supporting substrates 81 still with propagated in piezoelectric body layer 83 surface wave, compared with the elastic wave of boundary wave, high velocity of sound supporting substrates The velocity of sound of bulk wave in 81 is the substrate of high speed, plays elastic surface wave being closed to stacked piezoelectric body layer 83 and bass speed film 82 parts formed, it is avoided to leak into the function of high velocity of sound supporting substrates 81 on the lower.High velocity of sound supporting substrates 81 are, for example, Silicon substrate, thickness are, for example, 200 μm.In addition, high velocity of sound supporting substrates 81 can also be made up of any one following material：(1) The piezoelectrics of aluminium nitride, aluminum oxide, carborundum, silicon nitride, silicon, sapphire, sapphire, lithium tantalate, lithium niobate or crystal etc., (2) the various ceramics such as alumina, zirconium oxide, cordierite, mullite, talcum or forsterite, (3) magnesium diamond, (4) are with above-mentioned each Material is the material of main component, and the material of (5) using the mixture of above-mentioned each material as main component.

Bass speed film 82 is the bulk wave in bass speed film 82 compared with the velocity of sound for the elastic wave propagated in piezoelectric body layer 83 Velocity of sound be low speed film, configure between piezoelectric body layer 83 and high velocity of sound supporting substrates 81.Will by the structure and elastic wave Energy concentrates on the property for the medium for being essentially bass speed, can suppress leakage of the elastic surface wave energy to outside IDT electrode.It is low Velocity of sound film 82 is, for example, the film using silica as main component.The thickness of bass speed film 82 is, for example, 500nm or so.

According to the above-mentioned velocity of sound film layer stack structure of substrate 80, compared with the conventional structure using the piezoelectric substrate of individual layer Compared with the Q values in resonant frequency and anti-resonance frequency can be greatly improved.That is, the higher elastic surface wave due to may make up Q values Resonator, so the elastic surface wave resonator can be used, form the less wave filter of insertion loss.

In addition, high velocity of sound supporting substrates 81 can also have stacking supporting substrates and the table with being propagated in piezoelectric body layer 83 Face ripple, the elastic wave of boundary wave are compared to the structure that the velocity of sound of propagated bulk wave forms for the high velocity of sound film of high speed.In the situation Under, supporting substrates can use the piezoelectrics such as sapphire, lithium tantalate, lithium niobate, crystal；Alumina, magnesia, silicon nitride, nitridation The various ceramics such as aluminium, carborundum, zirconium oxide, cordierite, mullite, talcum, forsterite；The dielectrics such as glass；Or silicon, nitrogen Change the semiconductors and resin substrate etc. such as gallium.In addition, high velocity of sound film can use aluminium nitride, aluminum oxide, carborundum, silicon nitride, Silicon oxynitride, DLC film or diamond, using medium of the above-mentioned material as main component, the mixture using above-mentioned material as mainly into The various high velocity of sound materials such as the medium divided.

In addition, in the above description, show that the IDT electrode 71 for forming elastic wave resonator is formed with piezoelectric body layer Example on 83 substrate 80, but the substrate for forming IDT electrode 71 can also be the piezoelectricity being made up of the individual layer of piezoelectric body layer 83 Substrate.In this case piezoelectric substrate is for example by LiTaO₃Piezoelectric monocrystal or LiNbO₃Formed Deng other piezoelectric monocrystals.

In addition, formed IDT electrode 71 substrate as long as there is piezoelectric body layer 83, the knot being made up of except entirety piezoelectric body layer Beyond structure, the structure that piezoelectric body layer is laminated with supporting substrates can also be used.

Here, the design parameter of IDT electrode 71 is illustrated.The wavelength of so-called elastic surface wave resonator is by Fig. 6 Stage casing shown in the multiple electrodes of composition IDT electrode 71 refer to 172a or 172b cycle repeatedly that is, wavelength X to provide.Separately Outside, electrode spacing is the 1/2 of wavelength X, is set by the line width for forming IDT electrode 71a and 71b electrode finger 172a and 172b For W, in the case that the space width between adjacent electrode finger 172a and electrode finger 172b is set into S, determined by (W+S) Justice.In addition, as shown in Fig. 6 epimere, the cross width L of IDT electrode is IDT electrode 71a electrode finger 172a and IDT electrode 71b electrode finger 172b from X-direction in the case of overlapping electrode finger length.In addition, the electrode of each resonator Dutycycle is the line width occupation rate that multiple electrodes refer to 172a and 172b, be the line width relative to multiple electrodes refer to 172a and The ratio of 172b line width and the additive value of space width, defined by W/ (W+S).

[reflectance factor in 2.2 elastic wave resonator structures-low frequency region 1]

Hereinafter, illustrate and reflectance factor is increased by the first wave filter 11, improved by characteristic, declined by the 3rd wave filter 13 Subtract the combination of the specific structure of the filter characteristics such as characteristic, temperature characterisitic and bandwidth.

Fig. 7 A are that the reflection characteristic in the low frequency region 1 to the high-frequency front-end circuit of the variation 2 of embodiment 2 is said Bright figure.As shown in the hypomere of the figure, in the impedance operator of elastic wave resonator, confirm impedance for minimum resonance point with And the antiresonance point that impedance is maximum.Here, the region (Fig. 7 A low frequency region 1) of lower frequency side is being leaned on than resonance point, according to The structure of elastic wave resonator, impedance is different, is existed according to the size reflection characteristic of the impedance good and bad.More specifically, utilize (1) by LiNbO₃The R wave propagated in the piezoelectric body layer of composition, (2) are by LiTaO₃Propagated in the piezoelectric body layer of composition Leakage waves and (3) are by LiNbO₃Any one for the Love wave propagated in the piezoelectric body layer of composition is as elastic surface wave The above-mentioned velocity of sound film layer stack structure of structure and (4) utilized is compared with SMR or FBAR, the reflectance factor damage in low frequency region 1 Consume larger.

Fig. 7 B are the figures of the combination of the structure of the first wave filter 11 and the 3rd wave filter 13 that represent embodiment 2.

According to the relation of above-mentioned reflectance factor, it is located at the than the second wave filter 12 in the first passband of the first wave filter 11 In the case that two passbands lean on high frequency side, as shown in Figure 7 B, in the high-frequency front-end circuit of present embodiment, in the first wave filter 11 In can be using it is following any one as elastic surface wave come the structure that utilizes：(1) by LiNbO₃The piezoelectric body layer of composition The R wave of middle propagation；(2) by LiTaO₃The leakage waves propagated in the piezoelectric body layer of composition；And (3) by LiNbO₃Form Piezoelectric body layer in the Love wave propagated.

Thus, in high-frequency front-end circuit, can make the first wave filter 11 the second passband (the second wave filter 12 it is logical Band) in the wave filter 13 of reeflectance ratio the 3rd the second passband (passband of the second wave filter 12) in reflectance factor it is big.By This, can reduce in the insertion loss in the second passband of the second wave filter 12 by the first wave filter 11, the 3rd wave filter 13 or Insertion loss caused by its both sides of person.

On the other hand, in the 3rd wave filter 13, elastic wave resonator can also be made up of SMR or FBAR.

Thus, the reflectance factor of the second wave filter 12 can be increased by the structure of the first wave filter 11, and pass through The said structure of three wave filters 13, it can be ensured that the low-loss of the second wave filter 12 and the steepness of passband.

In addition, as shown in Figure 7 B, or form the elastic wave resonator of the first wave filter 11 respectively with above-mentioned Velocity of sound film layer stack structure, in the 3rd wave filter 13, elastic wave resonator is made up of SMR or FBAR.

Thus, in high-frequency front-end circuit, can make the first wave filter 11 the second passband (the second wave filter 12 it is logical Band) in the wave filter 13 of reeflectance ratio the 3rd the second passband (passband of the second wave filter 12) in reflectance factor it is big.Cause This, can reduce in the insertion loss in the second passband of the second wave filter 12 by the first wave filter 11, the 3rd wave filter 13 or Insertion loss caused by its both sides of person.The reflectance factor of the second wave filter 12 can be increased by the structure of the first wave filter 11, And pass through the said structure of the 3rd wave filter 13, it can be ensured that the low-loss of the second wave filter 12 and the steepness of passband.

[the bulk wave leakage in 2.3 elastic wave resonator structures-high-frequency region 1]

Fig. 8 A are that the bulk wave leakage in the high-frequency region 1 to the high-frequency front-end circuit of the variation 1 of embodiment 2 is said Bright figure.As shown in the hypomere of the figure, region (Fig. 8 A high frequency region of high frequency side is leaned in the antiresonance point than elastic wave resonator Domain 1) in, the change of the impedance as caused by bulk wave leaks (useless ripple) is produced, is existed according to the change reflection characteristic of the impedance excellent It is bad.More specifically, the reflection loss as caused by leaking bulk wave in high-frequency region 1 is followed successively by from small to large：(1) using by LiNbO₃Structure of the R wave propagated in the piezoelectric body layer of composition as elastic wave, SMR, FBAR；(2) the folded knot of velocity of sound film layer Structure；(3) using by LiTaO₃Structure of the leakage waves propagated in the piezoelectric body layer of composition as elastic wave；(4) using by LiNbO₃Structure of the Love wave propagated in the piezoelectric body layer of composition as elastic wave.

The first wave filter 11 of the variation 1 of embodiment 2 and the structure of the 3rd wave filter 13 are represented shown in Fig. 8 B The figure of combination.

According to the order of quality of above-mentioned reflection loss, it is located in the first passband of the first wave filter 11 than the second wave filter 12 The second passband lean on lower frequency side in the case of, as shown in Figure 8 B, in the first wave filter 11 of the lower frequency side of high-frequency front-end circuit, It can also be any one following situation：(1) using by LiNbO₃The R wave propagated in the piezoelectric body layer of composition is as bullet The structure of property surface wave；(2) elastic wave resonator is made up of SMR；And (3) elastic wave resonator is made up of FBAR.

Thus, in high-frequency front-end circuit, the second passband (of high frequency side of the first wave filter 11 of lower frequency side can be made The passband of two wave filters 12) in the wave filter 13 of reeflectance ratio the 3rd the second passband (the second wave filter 12 of high frequency side Passband) in reflectance factor it is big.Therefore, it is possible to reduce in the insertion loss in the second passband of the second wave filter 12 by the first filter Ripple device 11, the 3rd wave filter 13 or insertion loss caused by its both sides.

On the other hand, the 3rd wave filter 13 can also have any one following structure：(1) the folded knot of above-mentioned velocity of sound film layer Structure；(2) using by LiTaO₃Structure of the leakage waves propagated in the piezoelectric body layer of composition as elastic surface wave；And (3) Using by LiNbO₃Structure of the Love wave propagated in the piezoelectric body layer of composition as elastic surface wave.

Thus, the reflectance factor of the first wave filter 11 can be increased by the structure of the first wave filter 11, and make In the case that three wave filters 13 turn into velocity of sound film layer stack structure, it can be ensured that the low-loss of the 3rd wave filter 13 and good Temperature characterisitic.In addition, utilized in the 3rd wave filter 13 by LiNbO₃Love wave as elastic surface wave in the case of, can Ensure the wider bandwidth of the 3rd wave filter 13.

Alternatively, it is also possible to in the first wave filter 11, elastic wave resonator has above-mentioned velocity of sound film layer stack structure, In three wave filters 13, there is (1) using by LiTaO₃The leakage waves propagated in the piezoelectric body layer of composition are as elastic surface wave Structure or (2) using by LiNbO₃Structure of the Love wave propagated in the piezoelectric body layer of composition as elastic surface wave.

Thus, in high-frequency front-end circuit, the second passband (of high frequency side of the first wave filter 11 of lower frequency side can be made The passband of two wave filters 12) in the wave filter 13 of reeflectance ratio the 3rd the second passband (the second wave filter 12 of high frequency side Passband) in reflectance factor it is big.Therefore, it is possible to reduce in the insertion loss in the second passband of the second wave filter 12 by the first filter Ripple device 11, the 3rd wave filter 13 or insertion loss caused by its both sides.Further, make use of in the 3rd wave filter 13 LiNbO₃Love wave as elastic surface wave in the case of, it can be ensured that the wider bandwidth of the 3rd wave filter 13.

Alternatively, it is also possible to in the first wave filter 11, have using by LiTaO₃Propagated in the piezoelectric body layer of composition Structure of the leakage waves as elastic surface wave, in the 3rd wave filter 13, have using by LiNbO₃The piezoelectrics of composition Structure of the Love wave propagated in layer as elastic surface wave.

Therefore, in high-frequency front-end circuit, the second passband (of high frequency side of the first wave filter 11 of lower frequency side can be made The passband of two wave filters 12) in the wave filter 13 of reeflectance ratio the 3rd the second passband (the second wave filter 12 of high frequency side Passband) in reflectance factor it is big.By the first filter in the insertion loss in the second passband thereby, it is possible to reduce by the second wave filter 12 Ripple device 11, the 3rd wave filter 13 or insertion loss caused by its both sides.Further, LiNbO is utilized in the 3rd wave filter 13₃ Love wave as elastic surface wave in the case of, it can be ensured that the wider bandwidth of the 3rd wave filter 13.

[clutter in 2.4 elastic wave resonator structures-low frequency region 2]

Fig. 9 A are that the generation of the clutter in the low frequency region 2 to the high-frequency front-end circuit of the variation 2 of embodiment 2 is carried out The figure of explanation.As shown in the hypomere of the figure, region (Fig. 9 A low frequency range of lower frequency side is leaned in the resonance point than elastic wave resonator Domain 2), particularly, in above-mentioned velocity of sound film layer stack structure or using by LiTaO₃The leakage propagated in the piezoelectric body layer of composition Ripple produces the clutter of R wave as in the structure of elastic wave near 0.76 times of resonant frequency.Because the clutter produces, resistance It is anti-to change, diminish with the change reflectance factor of the impedance.

The first wave filter 11 the first passband be located at than the second wave filter 12 the second passband lean on high frequency side in the case of, As shown in Figure 9 B, or the first wave filter 11 is any one following situation：(1) using by LiNbO₃The pressure of composition Structure of the R wave propagated in electrics layer as elastic surface wave；(2) using by LiTaO₃Passed in the piezoelectric body layer of composition Structure of the leakage waves broadcast as elastic surface wave；(3) using by LiNbO₃The Love wave propagated in the piezoelectric body layer of composition Structure as elastic surface wave；(4) elastic wave resonator is made up of SMR；And (5) elastic wave resonator is made up of FBAR, The elastic wave resonator of 3rd wave filter 13 has above-mentioned velocity of sound film layer stack structure.

In other words, by making the 3rd wave filter 13 turn into velocity of sound film layer stack structure, turn into the first wave filter 11 Velocity of sound film layer stack structure, in the second passband (passband of the second wave filter 12 of lower frequency side) that the first wave filter 11 can be increased Reflectance factor.Therefore, in high-frequency front-end circuit, can reduce in the insertion loss in the second passband of the second wave filter 12 by First wave filter 11, the 3rd wave filter 13 or insertion loss caused by its both sides.

In addition, as shown in Figure 9 B, or the first wave filter 11 is any one following situation：(1) using by LiNbO₃Structure of the R wave propagated in the piezoelectric body layer of composition as elastic surface wave；(2) using by LiNbO₃Form Structure of the Love wave propagated in piezoelectric body layer as elastic surface wave；(3) above-mentioned velocity of sound film layer stack structure；(4) elastic wave is humorous The device that shakes is made up of SMR；And (5) elastic wave resonator is made up of FBAR, the 3rd wave filter 13 has using by LiTaO₃Structure Into piezoelectric body layer in the structure of the leakage waves propagated as elastic surface wave.

In other words, by utilizing LiTaO in the 3rd wave filter 13₃Leakage waves as elastic wave, in the first filtering LiTaO is not utilized in device 11₃Leakage waves as elastic wave, can increase the first wave filter 11 the second passband (lower frequency side The passband of second wave filter 12) in reflectance factor.Therefore, in high-frequency front-end circuit, it can reduce by the second wave filter 12 The insertion loss as caused by the first wave filter 11, the 3rd wave filter 13 or its both sides in insertion loss in second passband.

[higher mode in 2.5 elastic wave resonator structures-high-frequency region 2]

Figure 10 A are the generations of the higher mode in the high-frequency region 2 to the high-frequency front-end circuit of the variation 3 of embodiment 2 The figure illustrated.As shown in the hypomere of the figure, than elastic wave resonator resonance point by high frequency side region (Figure 10 A's High-frequency region 2), particularly, using by LiNbO₃The R wave propagated in the piezoelectric body layer of composition is as elastic surface wave Structure or using by LiNbO₃The Love wave propagated in the piezoelectric body layer of composition as in the structure of elastic surface wave, 1.2 times in resonant frequency nearby produce higher mode.Due to producing the higher mode, impedance changes, with the change of the impedance Change reflectance factor to diminish.

Figure 10 B be the variation 3 for representing embodiment 2 the first wave filter 11 and the 3rd wave filter 13 structure group The figure of conjunction.

The first wave filter 11 the first passband be located at than the second wave filter 12 the second passband lean on lower frequency side in the case of, As shown in Figure 10 B, or the first wave filter 11 has any one following structure：(1) above-mentioned velocity of sound film layer stack structure； (2) using by LiTaO₃Structure of the leakage waves propagated in the piezoelectric body layer of composition as elastic surface wave；(3) using by LiNbO₃Structure of the Love wave propagated in the piezoelectric body layer of composition as elastic surface wave；(4)SMR；And (5) FBAR, the Three wave filters 13 have using by LiNbO₃Structure of the R wave propagated in the piezoelectric body layer of composition as elastic surface wave.

In other words, by utilizing LiNbO in the 3rd wave filter 13₃R wave as elastic wave, in the first filtering LiNbO is not utilized in device 11₃R wave as elastic wave, can increase the first wave filter 11 the second passband (high frequency side The passband of second wave filter 12) in reflectance factor.Therefore, in high-frequency front-end circuit, it can reduce by the second wave filter 12 The insertion loss as caused by the first wave filter 11, the 3rd wave filter 13 or its both sides in insertion loss in second passband.

In addition, as shown in Figure 10 B, or the first wave filter 11 has any one following structure：(1) utilize By LiNbO₃Structure of the R wave propagated in the piezoelectric body layer of composition as elastic surface wave；(2) the folded knot of above-mentioned velocity of sound film layer Structure；(3) using by LiTaO₃Structure of the leakage waves propagated in the piezoelectric body layer of composition as elastic surface wave；(4)SMR； And (5) FBAR, in the 3rd wave filter 13, have using by LiNbO₃The Love wave propagated in the piezoelectric body layer of composition is made For the structure of elastic surface wave.

In other words, by utilizing LiNbO in the 3rd wave filter 13₃Love wave as elastic wave, in the first filtering LiNbO is not utilized in device 11₃Love wave as elastic wave, can increase the first wave filter 11 the second passband (high frequency side The passband of second wave filter 12) in reflectance factor.Therefore, in high-frequency front-end circuit, it can reduce by the second wave filter 12 The insertion loss as caused by the first wave filter 11, the 3rd wave filter 13 or its both sides in insertion loss in second passband.

[adjustment of 2.6 elastic wave resonator structural parameters]

Figure 11 A are the figures of the deterioration of the reflection loss as caused by higher mode for the first wave filter 11 for representing embodiment 2. As shown in the drawing, for the reflection loss for the first wave filter 11 observed from antenna duplexer terminal 101 (Port1), The high frequency side of resonance point, increase because of higher mode (Figure 11 A dashed region).Here, by making the structure of elastic wave resonator Parameters variation, can make because of higher mode and the frequency of reflection loss increase is offset to high frequency side or lower frequency side.Or by making The structural parameters change of elastic wave resonator, can suppress increase of the reflection loss because of higher mode.

Consider that inventors are found that in the first wave filter 11 being had a great influence to reflection characteristic, are passed through from the viewpoint Structural parameters change is set the generation frequency of higher mode, clutter etc. is offset to outside the passband of the second wave filter 12, to reflection Characteristic is influenceed in less 3rd wave filter 13, in order to ensure being filtered by characteristic, attenuation characteristic, temperature characterisitic and bandwidth etc. Device characteristic optimizes structural parameters.

Figure 11 B are that the variation 4 for representing embodiment 2 makes the structure of the first wave filter 11 and the 3rd wave filter 13 not The figure of same parameter.

The elastic wave resonator for forming the first wave filter 11 is by the substrate 80 with piezoelectric body layer 83 respectively and formed The elastic surface wave resonator that IDT electrode 71 on the substrate is formed.In the first wave filter 11 and the 3rd wave filter, such as scheme Shown in 11B, using by LiTaO₃The leakage waves propagated in the piezoelectric body layer of composition are forming the first filter as elastic surface wave In the IDT electrode 71 of the 3rd wave filter 13 of IDT electrode 71 and composition of ripple device 11, electrode thickness or dutycycle are different.

Utilizing LiTaO₃Leakage waves as elastic wave in the case of, in the low frequency of the resonant frequency of elastic wave resonator Side produces the clutter of R wave.On the other hand, in the first wave filter 11 and the 3rd wave filter 13, by making IDT electrode 71 Electrode thickness or dutycycle are different, can make the generation frequency of R wave clutter in the first wave filter 11 to the second passband (passband of the second wave filter 12 of lower frequency side) is offset outside.Thereby, it is possible to increase the second passband (lower frequency side of the first wave filter 11 The second wave filter 12 passband) in reflectance factor, and can reduce the insertion in the second passband of the second wave filter 12 damage The insertion loss as caused by the first wave filter 11, the 3rd wave filter 13 or its both sides in consumption.

In addition, in the first wave filter 11 and the 3rd wave filter 13, as shown in Figure 11 B, elastic wave resonator has upper State velocity of sound film layer stack structure, in the first wave filter 11 and the 3rd wave filter 13, can also make IDT electrode 71 electrode thickness, Any one of the dutycycle of IDT electrode 71 and the thickness of bass speed film 82 are different.

In the case of using velocity of sound film layer stack structure, Rayleigh is produced in the lower frequency side of the resonant frequency of elastic wave resonator The clutter of ripple.On the other hand, in the first wave filter 11 and the 3rd wave filter 13, by make IDT electrode 71 electrode thickness or Person's dutycycle is different, can make the generation frequency of R wave clutter in the first wave filter 11 to the second passband (the of lower frequency side The passband of two wave filters 12) offset outside.Thereby, it is possible to increase the second passband (the second filtering of lower frequency side of the first wave filter 11 The passband of device 12) in reflectance factor, and can reduce in the insertion loss in the second passband of the second wave filter 12 by first Wave filter 11, the 3rd wave filter 13 or insertion loss caused by its both sides.

Figure 11 C are that the variation 5 for representing embodiment 2 makes the structure of the first wave filter 11 and the 3rd wave filter 13 not The figure of same parameter.

The elastic wave resonator for forming the first wave filter 11 and the 3rd wave filter 13 is by with piezoelectric body layer 83 respectively Substrate 80, form IDT electrode 71 on the substrate and elasticity that the diaphragm 84 formed in the IDT electrode 71 is formed Surface resonator.In the first wave filter 11 of lower frequency side and the 3rd wave filter 13, as shown in Figure 11 C, using by LiNbO₃The R wave propagated in the piezoelectric body layer of composition or by LiNbO₃The Love wave propagated in the piezoelectric body layer of composition As elastic surface wave, in the first wave filter 11 and the 3rd wave filter 13, the electrode thickness of IDT electrode 71, IDT electrode 71 Any one of the thickness of dutycycle and diaphragm 84 is different.

Utilizing LiNbO₃R wave or LiNbO₃Love wave as elastic surface wave in the case of, in elastic wave The high frequency side of the resonant frequency of resonator produces higher mode.On the other hand, in the first wave filter 11 and the 3rd wave filter 13, lead to It is different to cross the thickness of the electrode thickness for making IDT electrode 71, the dutycycle of IDT electrode 71 or bass speed film 82, first can be made The generation frequency of higher mode in wave filter 11 is offset outside to the second passband (passband of the second wave filter 12 of high frequency side).By This, can increase the reflectance factor in the second passband (passband of the second wave filter 12 of high frequency side) of the first wave filter 11, and Can reduce in the insertion loss in the second passband of the second wave filter 12 by the first wave filter 11, the 3rd wave filter 13 or its Insertion loss caused by both sides.

In addition, in the first wave filter 11 and the 3rd wave filter 13, as shown in Figure 11 C, elastic wave resonator has upper Velocity of sound film layer stack structure is stated, high velocity of sound supporting substrates 81 are made up of silicon crystal, in the first wave filter 11 and the 3rd wave filter 13, Any one of the silicon crystal orientation of the thickness of piezoelectric body layer 83, the thickness of bass speed film 82 and high velocity of sound supporting substrates 81 Can be different.

In the case of using velocity of sound film layer stack structure, high order is produced in the high frequency side of the resonant frequency of elastic wave resonator Mould.On the other hand, in the first wave filter 11 and the 3rd wave filter 13, by the thickness, the bass speed film 82 that make piezoelectric body layer 83 Thickness or high velocity of sound supporting substrates 81 silicon crystal orientation it is different, the generation of the higher mode in the first wave filter 11 can be made Frequency is offset outside to the second passband (passband of the second wave filter 12 of high frequency side).Thereby, it is possible to increase the first wave filter 11 Reflectance factor in second passband (passband of the second wave filter 12 of high frequency side), and the second of the second wave filter 12 can be reduced The insertion loss as caused by the first wave filter 11, the 3rd wave filter 13 or its both sides in insertion loss in passband.

Figure 12 is that the variation 6 for representing embodiment 2 makes the structure of the first wave filter 11 and the 3rd wave filter 13 not The figure of same parameter.

The elastic wave resonator for forming the first wave filter 11 and the 3rd wave filter 13 is by with piezoelectric body layer 83 respectively Substrate 80 and form the elastic surface wave resonator that IDT electrode 71 on the substrate is formed.In the first wave filter 11 and In 3rd wave filter 13, using by LiTaO₃The leakage waves propagated in the piezoelectric body layer of composition or by LiNbO₃Form The Love wave propagated in piezoelectric body layer is as elastic surface wave, in the first wave filter 11 and the 3rd wave filter 13, IDT electrode 71 Electrode thickness it is different.

Utilizing LiTaO₃Leakage waves or LiNbO₃Love wave as elastic surface wave in the case of, in elastic wave The high frequency side of the resonant frequency of resonator produces bulk wave (useless ripple).On the other hand, in the first wave filter 11 and the 3rd wave filter In 13, by making the electrode thickness of IDT electrode 71 different, the generation frequency of bulk wave in the first wave filter 11 can be made to second Passband (passband of the second wave filter 12 of high frequency side) is offset outside.Thereby, it is possible to the second passband for increasing the first wave filter 11 is (high The passband of second wave filter 12 of frequency side) in reflectance factor, and can reduce in the second passband of the second wave filter 12 insert Enter the insertion loss as caused by the first wave filter 11, the 3rd wave filter 13 or its both sides in loss.

(embodiment 3)

In the present embodiment, to realizing the channel splitting circuit by being connected with antenna duplexer terminal and being configured at the channel splitting circuit Back segment wave filter corresponding with each frequency range form high-frequency front-end circuit low-loss and miniaturization structure carry out Explanation.

Figure 13 A are the circuit structure diagrams of the high-frequency front-end circuit 6 of embodiment 3.High-frequency front-end circuit 6 shown in the figure has Wave filter 13b, B30 of standby antenna duplexer terminal 101, LB wave filter 11L, MB wave filter 11M, HB wave filters 11H, B3 13f, LNA31,32 and 34.

LB wave filter 11L, MB wave filter 11M and HB wave filters 11H is the channel splitting circuit being connected with antenna element.

LB wave filters 11L is to pass through side filter with low frequency segment limit (such as below 2GHz) for the low frequency region of passband.

HB wave filters 11H is to be filtered with high band range (such as more than 2.3GHz) for the high-frequency region of passband by side Device.

MB wave filters 11M is the bandpass filter for passband with Band66 (2110-2200MHz).

Wave filter 13b is the bandpass filter for passband with Band3 (1805-1880MHz).

Wave filter 13f is the bandpass filter for passband with Band30 (2350-2360MHz).

Here, Band66 passband (2110-2200MHz) be in the passband (2110-2170MHz) comprising Band1 with And the relation of Band4 passband (2110-2155MHz).

Thereby, it is possible to the signal propagation path that the signal propagation path for making Band1 and Band4 shares Band66.Change sentence Talk about, Band1 and Band4 high-frequency signal are propagated on the signal path from MB wave filters 11M to LNA31.

In addition, in foregoing circuit structure, as the combination for carrying out CA actions, the CA actions for being Band1 and Band3, with And Band4 and Band30 CA actions.In other words, the Band1 and Band4 of band overlapping act without CA.

Figure 13 B are the circuit structure diagrams of the high-frequency front-end circuit 600 of comparative example.Moved as the CA for realizing Band1 and Band3 The circuit structure of work and Band4 and Band30 CA actions, in the past, it is proposed that the high-frequency front-end circuit 600 of comparative example.It is high Frequency front-end circuit 600 possesses antenna duplexer terminal 101, wave filter 13p, B3 for switching 21, B1 wave filter 13b, B4 are used Wave filter 13p and B30 wave filter 13f and LNA31,32,31 and 34.In the structure shown here, by switching switch 21, To select the CA actions of Band1 and Band3 CA actions or Band4 and Band30.

In the case of CA actions as implementation, as shown in comparative example, general another the wave filter 13p and B4 for preparing B1 Wave filter 13p, and switched over by using switch 21 to tackle.However, due to the big portion of Band1 and Band4 passband It is point overlapping, so as the high-frequency front-end circuit 6 of present embodiment, filter can be made by using the MB wave filters 11M in broadband Ripple device sharedization.On the other hand, in a comparative example, waste is produced on occupied area.

In other words, according to the high-frequency front-end circuit 6 of present embodiment, Band1 and Band4 high-frequency signal can be made The shared MB wave filters 11M using Band66 as passband.Thus, the passband of multiple frequency ranges is realized by a bandpass filter, from And saving spatialization can be realized.Further, by the Band1 and Band4 wave filter that high-frequency signal passed through can be reduced Quantity, so the propagation loss of high-frequency signal can be improved.

(other variations etc.)

More than, for the multiplexer of embodiments of the present invention, high-frequency front-end circuit and communicator, enumerate embodiment party Formula and its variation are illustrated, but combine arbitrary inscape in above-mentioned embodiment and variation to realize Other embodiments, implement those skilled in the art without departing from the spirit and scope of the invention to above-mentioned embodiment and think To various modifications obtained from variation, be built-in with the present invention high-frequency front-end circuit and communicator various equipment It is contained in the present invention.

For example, in the above description, as multiplexer, with two reception signal paths by common terminal share connection and Into 2 splitting/composing wave circuits exemplified by be illustrated, but the present invention can also apply to for example comprising transmitting path and reception The circuit of path both sides, the signal path of more than three share the splitting/composing wave circuit being formed by connecting by common terminal.

, can also be in input and output terminal and ground terminal etc. in addition, in each wave filter possessed by multiplexer Inductor, capacitor are connected between each terminal, circuit that can also be beyond the inductor such as additional resistive element and capacitor Element.

Low-loss of the present invention as the frequency specification that can be applied to multiband and more modellings, it is small-sized and it is low into This multiplexer, high-frequency front-end circuit and communicator, can be used in the communication equipments such as mobile phone extensively.

Description of reference numerals

1st, 2,2A, 2B, the high-frequency front-end circuit of 2C, 2D, 6,600 ...；3 ... communicators；10th, 14 ... channel splitting circuits；10A… Low pass filter；10B ... high-pass filters；11 ... first wave filters；11A, 11L1 ... MLB wave filters；11B, 11M2 ... MBb are filtered Ripple device；11C, 11MH1 ... MHBa wave filters；11D, 11H2 ... HBb wave filters；11H ... HB wave filters；11H1 ... HBa wave filters； 11L ... LB wave filters；11M ... MB wave filters；11M1 ... MBa wave filters；11X, 12H ... passband；12 ... second wave filters；13… 3rd wave filter；13a, 13b, 13c, 13d, 13e, 13f, 13g, 13h, 13j, 13k, 13p ... wave filter；13r1 ... accepts filter Device；13t, 13t1 ... transmitting filter；15 ... filter circuits；21、22、21A、21C、21D、21E、21F、21G、22A、22B、 22C, 22D ... are switched；21a, 12b ... select terminal；21c ... common terminals；30 ... amplifying circuits；31、32、33、34、35、 36…LNA；71st, 71a, 71b ... IDT electrode；72 ... are close to layer；73 ... main electrode layers；80 ... substrates；81 ... high velocity of sound supporting bases Plate；82 ... bass speed films；83 ... piezoelectric body layers；84 ... diaphragms；101 ... antenna duplexer terminals；102nd, 103 ... input/output terminals Son；171a, 171b ... bus electrode；172a, 172b ... electrode finger.

Claims

1. a kind of high-frequency front-end circuit, possesses：

Antenna duplexer terminal, it is connected with antenna element；

First input and output terminal and the second input and output terminal；

First wave filter, it is with the first terminal and Second terminal and with the first passband, above-mentioned the first terminal and above-mentioned day Line common terminal connects；

Second wave filter, it is connected with above-mentioned antenna duplexer terminal and configured in above-mentioned antenna duplexer terminal and the above-mentioned second input Between lead-out terminal, and there is second passband different from above-mentioned first passband；

Switch, there is common terminal and multiple selection terminals, above-mentioned common terminal to be connected with above-mentioned Second terminal for it；And

3rd wave filter, its with it is above-mentioned it is multiple selection terminals in first choice terminals be connected, and configuration above-mentioned switch with it is upper Between stating the first input and output terminal,

In above-mentioned second passband from from above-mentioned antenna duplexer terminals side with monomer in the case of above-mentioned first wave filter Reeflectance ratio is above-mentioned second logical from from above-mentioned antenna duplexer terminals side with monomer in the case of above-mentioned 3rd wave filter Reflectance factor in band is big.

2. high-frequency front-end circuit according to claim 1,

Above-mentioned first wave filter and above-mentioned 3rd wave filter include more than two elastic wave resonators respectively,

The elastic wave more than above-mentioned two of above-mentioned first wave filter is formed from from above-mentioned antenna duplexer terminals side with monomer It is configured in resonator above-mentioned second logical in the case of the more than one elastic wave resonator of above-mentioned antenna duplexer terminals side Reeflectance ratio in band is formed the above-mentioned two of above-mentioned 3rd wave filter from from above-mentioned antenna duplexer terminals side with monomer In the case of the more than one elastic wave resonator that above-mentioned antenna duplexer terminals side is configured in elastic wave resonator above Above-mentioned second passband in reflectance factor it is big.

3. the high-frequency front-end circuit according to claims 1 or 2,

At least one party of above-mentioned first wave filter and above-mentioned 3rd wave filter has the filter construction of ladder type,

The more than one elastic wave resonator for being configured at above-mentioned antenna duplexer terminals side includes series arm resonator and parallel connection At least one party of arm resonator.

4. according to high-frequency front-end circuit according to any one of claims 1 to 3,

At least one party of above-mentioned first wave filter and above-mentioned 3rd wave filter has longitudinally coupled filter construction.

5. according to high-frequency front-end circuit according to any one of claims 1 to 4,

Above-mentioned second input and output terminal is connected with the second amplifying circuit,

Filter circuit is not configured between above-mentioned second wave filter and above-mentioned second amplifying circuit.

6. according to high-frequency front-end circuit according to any one of claims 1 to 5, it is also equipped with：

3rd input and output terminal；And

4th wave filter, it is connected with above-mentioned antenna duplexer terminal and configured in above-mentioned antenna duplexer terminal and the above-mentioned 3rd input Between lead-out terminal, and there is the 3rd passband,

Above-mentioned first wave filter, above-mentioned second wave filter and above-mentioned 4th wave filter form triplexer,

Above-mentioned first passband, above-mentioned second passband and above-mentioned 3rd passband are LB applied to low-frequency range：698-960MHz, in Frequency range is MBa：1710-2200MHz, high band are HBa：2300-2690MHz,

Above-mentioned first passband is any one of above-mentioned low-frequency range, above-mentioned Mid Frequency and above-mentioned high band.

7. according to high-frequency front-end circuit according to any one of claims 1 to 5, it is also equipped with：

3rd input and output terminal and the 4th input and output terminal；

4th wave filter, it is connected with above-mentioned antenna duplexer terminal and configured in above-mentioned antenna duplexer terminal and the above-mentioned 3rd input Between lead-out terminal, and there is the 3rd passband；And

5th wave filter, it is connected with above-mentioned antenna duplexer terminal and configured in above-mentioned antenna duplexer terminal and the above-mentioned 4th input Between lead-out terminal, and there is the 4th passband,

Above-mentioned first wave filter, above-mentioned second wave filter, above-mentioned 4th wave filter and above-mentioned 5th wave filter form four work devices,

Above-mentioned first passband, above-mentioned second passband, above-mentioned 3rd passband and above-mentioned 4th passband are LB applied to low-frequency range： 698-960MHz, Mid Frequency are MBa：1710-2200MHz, medium-high frequency section are MHBa：2300-2400MHz, high band are HBb：2496-2690MHz,

Above-mentioned first passband is any one of above-mentioned low-frequency range, above-mentioned Mid Frequency, above-mentioned medium-high frequency section and above-mentioned high band.

8. according to high-frequency front-end circuit according to any one of claims 1 to 5, it is also equipped with：

3rd input and output terminal and the 4th input and output terminal；

Above-mentioned first passband, above-mentioned second passband, above-mentioned 3rd passband and above-mentioned 4th passband are applied to middle low-frequency range MLB：1475.9-2025MHz, Mid Frequency be MBb：2110-2200MHz, medium-high frequency section are MHBa：2300-2400MHz or Person MHBb：2300-2370MHz, high band are HBb：2496-2690MHz,

Above-mentioned first passband is any one of above-mentioned middle low-frequency range, above-mentioned Mid Frequency, above-mentioned medium-high frequency section and above-mentioned high band It is individual.

9. high-frequency front-end circuit according to claim 5, is also equipped with：

3rd input and output terminal and the 4th input and output terminal；

Above-mentioned first passband is any one of above-mentioned middle low-frequency range, above-mentioned Mid Frequency and above-mentioned high band,

Above-mentioned second passband is above-mentioned medium-high frequency section,

On the signal path for connecting above-mentioned second wave filter and above-mentioned second amplifying circuit, filter circuit is not configured.

10. high-frequency front-end circuit according to claim 9,

The signal path for connecting above-mentioned second wave filter and above-mentioned second amplifying circuit is the path for the transmitting-receiving for carrying out Band40a, Band40a frequency acceptance band is 2300-2370MHz.

11. high-frequency front-end circuit according to claim 9,

The above-mentioned signal path for connecting above-mentioned second wave filter and above-mentioned second amplifying circuit is the road for the transmitting-receiving for carrying out Band40 Footpath, Band40 frequency acceptance band is 2300-2400MHz.

12. high-frequency front-end circuit according to claim 5, is also equipped with：

3rd input and output terminal and the 4th input and output terminal；

Above-mentioned first passband is any one of above-mentioned middle low-frequency range, above-mentioned Mid Frequency and above-mentioned medium-high frequency section,

Above-mentioned second passband is above-mentioned high band,

13. high-frequency front-end circuit according to claim 10,

The above-mentioned signal path for connecting above-mentioned second wave filter and above-mentioned second amplifying circuit is the road for the transmitting-receiving for carrying out Band41 Footpath, Band41 frequency acceptance band is 2496-2690MHz.

14. the high-frequency front-end circuit according to any one of claim 1~13,

Above-mentioned first passband is located at leans on high frequency side than above-mentioned second passband,

Above-mentioned first wave filter and above-mentioned 3rd wave filter include more than one elastic wave resonator respectively,

It is by the substrate with piezoelectric body layer respectively to form the elastic wave resonator more than said one of above-mentioned first wave filter The elastic surface wave resonator formed with the IDT electrode formed on the substrate,

In above-mentioned first wave filter, by the use of it is following any one be used as elastic surface wave：(1) by LiNbO₃What is formed is above-mentioned The R wave propagated in piezoelectric body layer；(2) by LiTaO₃The leakage waves propagated in the above-mentioned piezoelectric body layer formed；And (3) By LiNbO₃The Love wave propagated in the above-mentioned piezoelectric body layer formed.

15. high-frequency front-end circuit according to claim 14,

In above-mentioned 3rd wave filter, elastic wave resonator is by SMR (Solidly Mounted Resonator) or FBAR (Film Bulk Acoustic Resonator) is formed.

16. the high-frequency front-end circuit according to any one of claim 1~13,

In above-mentioned first wave filter, elastic wave resonator have by the interarea of a side formed with the upper of above-mentioned IDT electrode The bulk wave velocity of sound for state piezoelectric body layer, being propagated compared with the elastic wave velocity of sound propagated in above-mentioned piezoelectric body layer is the high pitch of high speed Fast supporting substrates and configuration between above-mentioned high velocity of sound supporting substrates and above-mentioned piezoelectric body layer and with above-mentioned piezoelectric body layer Velocity of sound film layer stack structure of the elastic wave velocity of sound of propagation compared to propagated bulk wave velocity of sound for the bass speed film composition of low speed,

In above-mentioned 3rd wave filter, elastic wave resonator is made up of SMR or FBAR.

17. the high-frequency front-end circuit according to any one of claim 1~13,

Above-mentioned first passband is located at leans on lower frequency side than above-mentioned second passband,

It is any one following situation in above-mentioned first wave filter：(1) using by LiNbO₃Passed in the piezoelectric body layer of composition The R wave broadcast is as elastic surface wave；(2) elastic wave resonator is made up of SMR；And (3) elastic wave resonator is by FBAR structures Into.

18. high-frequency front-end circuit according to claim 17,

It is any one following situation in above-mentioned 3rd wave filter：(1) elastic wave resonator has by the interarea of a side Piezoelectric body layer formed with IDT electrode, the bulk wave sound propagated compared with the elastic wave velocity of sound propagated in above-mentioned piezoelectric body layer Speed for high speed high velocity of sound supporting substrates and configuration between above-mentioned high velocity of sound supporting substrates and above-mentioned piezoelectric body layer and with The elastic wave velocity of sound propagated in above-mentioned piezoelectric body layer is compared to the velocity of sound that propagated bulk wave velocity of sound is formed for the bass speed film of low speed Film layer stack structure；(2) using by LiTaO₃The leakage waves propagated in the piezoelectric body layer of composition are as elastic surface wave；And (3) using by LiNbO₃The Love wave propagated in the piezoelectric body layer of composition is as elastic surface wave.

19. the high-frequency front-end circuit according to any one of claim 1~13,

The elastic wave resonator for forming above-mentioned first wave filter and above-mentioned 3rd wave filter is by with piezoelectric body layer respectively Substrate and the elastic surface wave resonator for forming IDT electrode composition on the substrate,

In above-mentioned 3rd wave filter, (1) is using by LiTaO₃The leakage waves propagated in the above-mentioned piezoelectric body layer formed are as bullet Property surface wave, or (2) using by LiNbO₃The Love wave propagated in the above-mentioned piezoelectric body layer formed is as elastic surface wave.

20. the high-frequency front-end circuit according to any one of claim 1~13,

In above-mentioned first wave filter, using by LiTaO₃The leakage waves propagated in the above-mentioned piezoelectric body layer formed are as elasticity Surface wave,

In above-mentioned 3rd wave filter, using by LiNbO₃The Love wave propagated in the above-mentioned piezoelectric body layer formed is as elasticity Surface wave.

21. the high-frequency front-end circuit according to any one of claim 1~13,

It is any one following situation in above-mentioned first wave filter：(1) using by LiNbO₃Passed in the piezoelectric body layer of composition The R wave broadcast is as elastic surface wave；(2) using by LiTaO₃The leakage waves propagated in the piezoelectric body layer of composition are as bullet Property surface wave；(3) using by LiNbO₃The Love wave propagated in the piezoelectric body layer of composition is as elastic surface wave；(4) it is elastic Wave resonator is made up of SMR；And (5) elastic wave resonator is made up of FBAR,

In above-mentioned 3rd wave filter, elastic wave resonator has by the piezoelectrics formed with IDT electrode on the interarea of a side Layer, the bulk wave velocity of sound propagated compared with the elastic wave velocity of sound propagated in above-mentioned piezoelectric body layer support base for the high velocity of sound of high speed Plate and configuration are between above-mentioned high velocity of sound supporting substrates and above-mentioned piezoelectric body layer and the bullet with being propagated in above-mentioned piezoelectric body layer Property Boeing speed compared to propagated bulk wave velocity of sound for low speed bass speed film form velocity of sound film layer stack structure.

22. the high-frequency front-end circuit according to any one of claim 1~13,

It is any one following situation in above-mentioned first wave filter：(1) using by LiNbO₃Passed in the piezoelectric body layer of composition The R wave broadcast is as elastic surface wave；(2) using by LiNbO₃The Love wave propagated in the piezoelectric body layer of composition is as bullet Property surface wave；(3) elastic wave resonator have by the interarea of a side piezoelectric body layer formed with IDT electrode, with above-mentioned The elastic wave velocity of sound propagated in piezoelectric body layer is the high velocity of sound supporting substrates of high speed and configuration compared to propagated bulk wave velocity of sound Between above-mentioned high velocity of sound supporting substrates and above-mentioned piezoelectric body layer and the elastic wave velocity of sound phase with being propagated in above-mentioned piezoelectric body layer The velocity of sound film layer stack structure formed than the bulk wave velocity of sound propagated for the bass speed film of low speed；(4) elastic wave resonator is by SMR structures Into；And (5) elastic wave resonator is made up of FBAR,

In above-mentioned 3rd wave filter, using by LiTaO₃The leakage waves propagated in the piezoelectric body layer of composition are as elastic surface Ripple.

23. the high-frequency front-end circuit according to any one of claim 1~13,

It is any one following situation in above-mentioned first wave filter：(1) elastic wave resonator has by the interarea of a side Piezoelectric body layer formed with IDT electrode, the bulk wave sound propagated compared with the elastic wave velocity of sound propagated in above-mentioned piezoelectric body layer Speed for high speed high velocity of sound supporting substrates and configuration between above-mentioned high velocity of sound supporting substrates and above-mentioned piezoelectric body layer and with The elastic wave velocity of sound propagated in above-mentioned piezoelectric body layer is compared to the velocity of sound that propagated bulk wave velocity of sound is formed for the bass speed film of low speed Film layer stack structure；(2) using by LiTaO₃The leakage waves propagated in the piezoelectric body layer of composition are as elastic surface wave；(3) it is sharp Used in by LiNbO₃The Love wave propagated in the piezoelectric body layer of composition is as elastic surface wave；(4) elastic wave resonator is by SMR structures Into；And (5) elastic wave resonator is made up of FBAR,

In above-mentioned 3rd wave filter, using by LiNbO₃The R wave propagated in the piezoelectric body layer of composition is as elastic surface Ripple.

24. the high-frequency front-end circuit according to any one of claim 1~13,

It is any one following situation in above-mentioned first wave filter：(1) using by LiNbO₃Passed in the piezoelectric body layer of composition The R wave broadcast is as elastic surface wave；(2) elastic wave resonator has by the pressure formed with IDT electrode on the interarea of a side Electrics layer, the high velocity of sound branch that the bulk wave velocity of sound propagated compared with the elastic wave velocity of sound propagated in above-mentioned piezoelectric body layer is high speed Substrate and configuration are held between above-mentioned high velocity of sound supporting substrates and above-mentioned piezoelectric body layer and with being propagated in above-mentioned piezoelectric body layer Elastic wave velocity of sound compared to propagated bulk wave velocity of sound for low speed bass speed film form velocity of sound film layer stack structure；(3) utilize By LiTaO₃The leakage waves propagated in the piezoelectric body layer of composition are as elastic surface wave；(4) elastic wave resonator is by SMR structures Into；And (5) elastic wave resonator is made up of FBAR,

In above-mentioned 3rd wave filter, using by LiNbO₃The Love wave propagated in the piezoelectric body layer of composition is as elastic surface Ripple.

25. the high-frequency front-end circuit according to any one of claim 1~13,

Form the elastic wave resonator more than above-mentioned two of above-mentioned first wave filter and above-mentioned 3rd wave filter be respectively by The elastic surface wave resonator that the IDT electrode of substrate and formation on the substrate with piezoelectric body layer is formed,

In above-mentioned first wave filter and above-mentioned 3rd wave filter, using by LiTaO₃Passed in the above-mentioned piezoelectric body layer formed The leakage waves broadcast as elastic surface wave,

In forming the above-mentioned IDT electrode of above-mentioned first wave filter and forming the above-mentioned IDT electrode of above-mentioned 3rd wave filter, thickness Or dutycycle is different.

26. the high-frequency front-end circuit according to any one of claim 1~13,

In above-mentioned first wave filter and above-mentioned 3rd wave filter, elastic wave resonator has by being formed on the interarea of a side There are above-mentioned piezoelectric body layer, the bulk wave sound propagated compared with the elastic wave velocity of sound propagated in above-mentioned piezoelectric body layer of IDT electrode Speed for high speed high velocity of sound supporting substrates and configuration between above-mentioned high velocity of sound supporting substrates and above-mentioned piezoelectric body layer and with The elastic wave velocity of sound propagated in above-mentioned piezoelectric body layer is compared to the velocity of sound that propagated bulk wave velocity of sound is formed for the bass speed film of low speed Film layer stack structure,

In above-mentioned first wave filter and above-mentioned 3rd wave filter, the thickness of above-mentioned IDT electrode, the dutycycle of above-mentioned IDT electrode And any one of the thickness of above-mentioned bass speed film is different.

27. the high-frequency front-end circuit according to any one of claim 1~13,

Form the elastic wave resonator more than above-mentioned two of above-mentioned first wave filter and above-mentioned 3rd wave filter be respectively by Substrate with piezoelectric body layer, the diaphragm for forming IDT electrode on the substrate and being formed in the IDT electrode are formed Elastic surface wave resonator,

In above-mentioned first wave filter and above-mentioned 3rd wave filter, (1) is utilized by LiNbO₃In the above-mentioned piezoelectric body layer formed The R wave of propagation or (2) are by LiNbO₃The Love wave propagated in the above-mentioned piezoelectric body layer formed, is used as elastic surface Ripple：；

In above-mentioned first wave filter and above-mentioned 3rd wave filter, the thickness of above-mentioned IDT electrode, the dutycycle of above-mentioned IDT electrode And any one of the thickness of said protection film is different.

28. the high-frequency front-end circuit according to any one of claim 1~13,

Above-mentioned high velocity of sound supporting substrates are made up of silicon crystal,

In above-mentioned first wave filter and above-mentioned 3rd wave filter, the thickness of above-mentioned piezoelectric body layer, the thickness of above-mentioned bass speed film And any one of the silicon crystal orientation of above-mentioned high velocity of sound supporting substrates is different.

29. the high-frequency front-end circuit according to any one of claim 1~13,

In above-mentioned first wave filter and above-mentioned 3rd wave filter, (1) is utilized by LiTaO₃In the above-mentioned piezoelectric body layer formed The leakage waves of propagation or (2) are by LiNbO₃The Love wave propagated in the above-mentioned piezoelectric body layer formed, is used as elastic surface Ripple：,

In above-mentioned first wave filter and above-mentioned 3rd wave filter, the thickness of above-mentioned IDT electrode is different.

30. the high-frequency front-end circuit according to any one of claim 1~29, is also equipped with：

First amplifying circuit, it is connected with above-mentioned first input and output terminal；And

Second amplifying circuit, it is connected with above-mentioned second input and output terminal.

31. a kind of communicator, possesses：

RF signal processing circuits, it is handled the high-frequency signal received and dispatched by above-mentioned antenna element；And

Transmit in the claims 1 to 30 of above-mentioned high-frequency signal and appoint between above-mentioned antenna element and above-mentioned RF signal processing circuits High-frequency front-end circuit described in one.