The content of the invention
The technical problem to be solved in the present invention is, for the drawbacks described above of prior art, there is provided one kind is based on miniaturization
The dual-passband difference filter of bimodulus dielectric resonator.
The technical solution adopted for the present invention to solve the technical problems is:Construction one kind is based on small-sized double dielectric resonance
The dual-passband difference filter of device, including metallic cavity, two bimodulus dielectric resonators, solid for being fixed in side by side in metallic cavity
Two groups of difference incentive structures being scheduled on metallic cavity bottom wall, the split position of the metallic cavity are provided with metal gear
Plate, spaced apart between the both sides of the metal baffle and corresponding metallic cavity side wall, the metal baffle is by described in
Metallic cavity is divided into two rectangular cavities side by side and communicated, set in each rectangular cavities a bimodulus dielectric resonator with
And it is distributed in one group of difference incentive structure of two offsides of bimodulus dielectric resonator;
Wherein, the bimodulus dielectric resonator is the square Rectangular Enclosure with Participating Media resonator in cross section and bottom and wire chamber
The bottom of body directly contacts, top and the metallic cavity head clearance certain distance of the Rectangular Enclosure with Participating Media resonator;In bimodulus medium
The diagonal positions of resonator are provided with a pair of corner cuts for separating orthogonal degenerate mode, each bimodulus dielectric resonator
A pair of corner cuts where diagonal it is parallel with the metal baffle, two groups of difference incentive structures are projected as in metallic cavity bottom
Four summits of parallelogram.
Wherein, the dual-passband difference filter also include can by metallic screw fix one group of fixture, this group
Fixture is located at the position of a pair of corner cuts of the bimodulus dielectric resonator, and is adhesively fixed with bimodulus dielectric resonator.
Wherein, the difference incentive structure includes the microwave junction and and microwave junction being arranged on metallic cavity bottom wall
The feed probes of corresponding connection, short transverse extension of the feed probes along the bimodulus dielectric resonator.
Wherein, a tuning disk for being used to finely tune resonant frequency is also set up directly over the bimodulus dielectric resonator.
Implement the dual-passband difference filter based on small-sized double dielectric resonator of the present invention, have below beneficial to effect
Fruit:Due to the square Rectangular Enclosure with Participating Media resonator in cross section to be directly placed to the bottom of metallic cavity, with traditional bimodulus
Dielectric resonator is compared, and its size can reduce half and the magnetic distribution of main mould will not change.It is situated between according to bimodulus
The main mould magnetic distribution and ampere right-handed helix criterion of matter resonator, two groups of orthogonal TE11δPattern is easy to by difference excitation simultaneously
The differential mode passband of dual-passband difference filter is built by appropriate coupling, selective with low insertion loss and upper passband
Advantage, and in wider frequency range, the degree of common mode inhibition is higher;It is and symmetrical due to every group of difference incentive structure
Face is parallel with the plane of symmetry of another group of difference incentive structure, and this structure causes there is a transmission zero between two differential mode passbands
Produce, improve the isolation between two passbands.
Embodiment
For the ease of understanding the present invention, the present invention is described more fully below with reference to relevant drawings.In accompanying drawing
Give the exemplary embodiments of the present invention.But the present invention can realize in many different forms, however it is not limited to this paper institutes
The embodiment of description.On the contrary, the purpose for providing these embodiments is made to the disclosure more thorough and comprehensive.
It should be noted that term as used herein " vertically ", " horizontal ", "left", "right" and similar table
State for illustrative purposes only.
Unless otherwise defined, all of technologies and scientific terms used here by the article is with belonging to technical field of the invention
The implication that technical staff is generally understood that is identical.Term used in the description of the invention herein is intended merely to description tool
The purpose of the embodiment of body, it is not intended that in the limitation present invention.
The term comprising ordinal number such as " first " that is used in this specification, " second " can be used for illustrating various inscapes,
But these inscapes are not limited by these terms.It is only that using the purpose of these terms and distinguishes an inscape
In other inscapes.For example, on the premise of the interest field of the present invention is not departed from, the first inscape can be named as the
Two inscapes, similarly, the second inscape can also be named as the first inscape.
In order to be better understood from above-mentioned technical proposal, below in conjunction with Figure of description and specific embodiment to upper
State technical scheme to be described in detail, it should be understood that the specific features in the embodiment of the present invention and embodiment are to the application
The detailed description of technical scheme, rather than the restriction to technical scheme, in the case where not conflicting, the present invention is implemented
Technical characteristic in example and embodiment can be mutually combined.
With reference to figure 1-2, the dual-passband difference filter of the invention based on small-sized double dielectric resonator, including metal
Cavity 100, two bimodulus dielectric resonators 200 and 300, two groups of difference incentive structures 1,1 ' and 2,2 ' of identical size, wherein
One group is used for Differential Input, and another group is used for difference output.
Wherein, two groups of difference incentive structures 1,1 ' and 2,2 ' are respectively positioned at the two of two bimodulus dielectric resonators 200 and 300
Individual offside, distance of each difference incentive structure apart from its corresponding bimodulus dielectric resonator side are equal, every group of difference
Incentive structure 1,1 ' is either on the split of 2,2 ' the bimodulus dielectric resonator 200 or 300 corresponding to it.Two bimodulus
Dielectric resonator 200 and 300 is fixed in side by side in metallic cavity 100, i.e. the direction of bimodulus dielectric resonator 200 and 300 is one
Cause, similarly two groups of difference incentive structures 1,1 ' are also consistent with 2,2 ' direction.
Specifically, bimodulus dielectric resonator 200 and 300 be the square Rectangular Enclosure with Participating Media resonator in corresponding cross section and
Bottom directly contacts with the bottom of metallic cavity 100, but the top of bimodulus dielectric resonator 200 and 300 and metallic cavity top
It is spaced apart;It is provided with the diagonal positions of bimodulus dielectric resonator 200 or 300 for separating orthogonal degenerate mode
A pair of corner cuts, structure 10,10 ' as shown in phantom in FIG., illustrate a pair of corner cuts of bimodulus dielectric resonator 200;It is situated between in bimodulus
The surface of matter resonator 200,300 also sets up a tuning disk (not shown) for being used to finely tune resonant frequency.
Specifically, metallic cavity 100 belongs to rectangular cavity, the split position of length direction is provided with a metal baffle 3,
The metallic cavity 100 is divided into two rectangular cavities 101,102 side by side and communicated by the metal baffle 3.Metal baffle 3
Top and bottom directly contacted with the top and bottom of metallic cavity 100 respectively, the both sides of metal baffle 3 and corresponding metal
It is spaced apart between the side wall of cavity 100, such as w in figure1、w2It is shown.
In the present embodiment, bimodulus dielectric resonator 200 and its corresponding difference incentive structure 1,1 ' are located at rectangular cavities 101
Interior, bimodulus dielectric resonator 300 and its corresponding difference incentive structure 2,2 ' are located in rectangular cavities 102.Bimodulus dielectric resonance
Diagonal where the corner cut of device 200,300 is parallel with metal baffle 3, and two groups of difference incentive structures 1,1 ' and 2,2 ' are in metallic cavity
Four summits for being projected as parallelogram of 100 bottom.
, can be in a pair of fixtures of Position Design of its a pair of corner cuts, example in order to fix bimodulus dielectric resonator 200,300
Such as 41,42 and 43,44.Fixture 41,42,43,44 can be fixed with metallic screw.In order to improve fixed effect, prevent from rocking, together
When for uniform force, fixture 41,42 is arranged on two flex points of the non-face of two corner cuts of bimodulus dielectric resonator 200
Place, similarly, fixture 43,44 is arranged at two flex points of the non-face of two corner cuts of bimodulus dielectric resonator 300.
Specifically, difference incentive structure 1,1 ' and 2,2 ' includes the microwave junction being arranged on the bottom wall of metallic cavity 100
And the feed probes of connection corresponding with microwave junction, height side of the feed probes along bimodulus dielectric resonator 200 or 300
To extension.
The design and analysis process and effect that the invention will now be described in detail with reference to the accompanying drawings.
In order to illustrate the wave filter of the present invention, it is necessary to first introduce the characteristic of bimodulus dielectric resonator therein.For one
Individual size be a × a × 2h Rectangular Enclosure with Participating Media resonator, resonance can occur at different frequencies for it, its main mould be one group just
Hand over the TE of degeneracy11δPattern.According to the boundary condition of electromagnetic field, (electric wall) coats layer of metal not on electric field symmetrical plane
Original magnetic distribution can be influenceed, based on this, the structure of the bimodulus dielectric resonator of proposition is as shown in figure 3, size is a × a
× h dielectric resonator is directly placed at the bottom, the metal covering of metallic cavity bottom etc. for the metallic cavity that size is A × A × H
Imitate as main mould TE11δThe electric wall of pattern so that the size of resonator reduces half due to hemisection.Meanwhile its main mould is still one
The TE of the orthogonal degeneracy of group11δPattern, i.e. TE11δ xAnd TE11δ yPattern, respectively as shown in left figure and right figure in Fig. 4.
Fig. 5-7 gives some characteristics of the bimodulus dielectric resonator shown in Fig. 3, such as the resonant frequency f of main mould0And Qu.This
In, parameter Gap is defined as H-h.From figure 5 it can be seen that f0And QuAll reduce with the increase of Gap values, and in Gap
Region of the value less than 12mm drastically declines.As shown in fig. 6, similarly, f0And QuRelation between parameter A shows similar
Downward trend.These characteristics contribute in the design process of wave filter to choose suitable bimodulus dielectric resonator and metallic cavity
Size.In order to allow one group of orthogonal degenerate mode to separate, such as Fig. 7, bimodulus dielectric resonator of the wave filter of the present invention in Fig. 3
Diagonal on cut off pair of horns, formed such as one group of corner cut that the side edge length in Fig. 7 is S, it can realize one group of orthogonal degeneracy
The separation of pattern.Pattern after separation is named as Mode A and Mode B, corresponds respectively to relatively low and higher resonant frequency.Fig. 7
Show the relation between the resonant frequency of Mode A and B and parameter S.It can be seen that when parameter S value is less than 7.5mm
When, increasing S value can be such that the resonant frequency of Mode B increases rapidly, and the frequency of Mode A is kept approximately constant.Make full use of this
One characteristic, the resonant frequency of the two patterns can be discretely far, and the two of wave filter frequency bands are built with this.
Analyzed based on more than, we devise the dual-passband difference filter of a structure as shown in Figure 1-2.Its design refers to
It is designated as the centre frequency f of the first passband (lower passband)1For the 1.52GHz, (FBW of ripple relative bandwidth 0.4% with 0.07dBL);
The centre frequency f of second passband (upper passband)2For the 1.64GHz, (FBW of ripple relative bandwidth 0.43% with 0.057dBH).Its
In, the length l of feed probes determines the coupling amount of input/output, i.e. external sort factor with it apart from the spacing g of resonator
Qe.Metal baffle is located at the centre of metallic cavity, forms two bars transmission paths.Parameter w1And w2Two resonators of control it
Between stiffness of coupling, i.e. coefficient of coup k.Fig. 8 shows the coupling path of dual-passband difference filter of the present invention, wherein SdAnd Ld
Expression source and load, 1A(2A) and 1B(2B) represent bimodulus dielectric resonator 200 (bimodulus dielectric resonator 300) relatively low and compared with
High resonant frequency.It is clear that path Sd-1A-2A-LdBuild the first passband, i.e. lower passband, and path Sd-1B-2B-LdStructure
Second passband, i.e. upper passband.
Difference filter design analysis in, due to one group of difference port to can be equivalent to a port (equivalent to
Single port), so k and Q in the design of traditional single-ended filtereExtracting method be equally applicable to difference filter design.Therefore,
In order to extract the k in dual-passband difference filter, the first step needs to change the size of feed probes or probe apart from resonator
Distance form weak coupling.Then, will be according to curve Sdd21Record corresponding fa1, fa2, fb1And fb2, wherein fa1(fb1) and fa2
(fb2) the relatively low and higher resonant frequency of low (height) passband is represented respectively.So the k of extraction can be calculated by formula (1)
Obtain.It can be seen in figure 9 that with parameter w1Or w2The increase of value, k value become big.
In order to extract Qe, the first step is to build its corresponding simulation model, as shown in the illustration in Figure 10.In next step, root
According to curve Sdd11Group delay characteristic, record fg1And fg2.Then further according to curve Sdd11Phase characteristic, be separately recorded in fg1With
fg2± 90 ° of bandwidth BWs at placeg1And BWg2.So Q of extractioneIt can be calculated by formula (2).From fig. 10 it can be seen that
When the stiffness of coupling increase between resonator and feed probes, QeValue reduce.
According to the design objective of dual-passband difference Chebyshev's bandpass filter, the lamped element value of lowpass prototype filter
It can be identified as:For lower passband, g0L=1, g1L=0.7609, g2L=0.5901;For upper passband, g0H=1, g1H=
0.7181, g2H=0.5709.It is then possible to the k and Q that wave filter design is wanted are calculated by using formula (3a), (3b)e,
That is lower passbandWithUpper passbandWith
Therefore, the coupling matrix M corresponding to dual-passband difference filter design objective can be calculated in we, and it is to build
It is f=(f to stand in a centre frequency1+f2On the basis of the single broadband filter of)/2, its absolute bandwidth BW covering dual-passbands
Two passbands of difference filter, FBWtRepresent the relative bandwidth of broadband filter.BW in formula (5) and (7)LAnd BWHRespectively
Corresponding to lower passband and the absolute bandwidth of upper passband.
Finally, according to the design objective of dual-passband difference filter and by the k and Q of extractione, after simulation optimization
The correspondingly-sized of dual-passband difference filter can be identified below:G=3.92mm, l=25mm, w1=10.5mm, w2=13mm,
Iris=3mm, A=83mm, B=40mm, C=32mm.Figure 11 shows coupling matrix M frequency response and dual-passband of the present invention
The simulation result of difference filter, illustrates good uniformity.Simultaneously in wider frequency range, the degree of common mode inhibition is very
It is high.Figure 12 shows emulation and the measured result of dual-passband difference filter of the present invention, has good uniformity.From the figure
As can be seen that the centre frequency of the first passband measured is 1.52GHz, insertion loss is that 0.9dB and return loss are better than 15dB;
The centre frequency of the second passband measured is 1.64GHz, and insertion loss is that 0.85dB and return loss are better than 12dB;Two differential modes
Common mode inhibition in passband is higher than 45dB;A transmission zero is generated near frequency 1.58GHz, is improved between passband
Isolation.
In summary, implement the dual-passband difference filter based on small-sized double dielectric resonator of the present invention, have
Following beneficial effect:Due to the square Rectangular Enclosure with Participating Media resonator in cross section to be directly placed to the bottom of metallic cavity, with
Traditional bimodulus dielectric resonator is compared, and its size can reduce half and the magnetic distribution of main mould will not change.
According to the main mould magnetic distribution of bimodulus dielectric resonator and ampere right-handed helix criterion, two groups of orthogonal TE11δPattern be easy to by
Difference encourages and builds the differential mode passband of dual-passband difference filter by appropriate coupling, has low insertion loss and high pass
With it is selective the advantages of, and in wider frequency range, the degree of common mode inhibition is higher;And because every group of difference encourages
The plane of symmetry of structure is parallel with the plane of symmetry of another group of difference incentive structure, and this structure causes there is one between two differential mode passbands
Individual transmission zero produces, and improves the isolation between two passbands.
Embodiments of the invention are described above in conjunction with accompanying drawing, but the invention is not limited in above-mentioned specific
Embodiment, above-mentioned embodiment is only schematical, rather than restricted, one of ordinary skill in the art
Under the enlightenment of the present invention, in the case of present inventive concept and scope of the claimed protection is not departed from, it can also make a lot
Form, these are belonged within the protection of the present invention.