CN107630201A - A kind of reactive sputter-deposition rate stabilization control system and method - Google Patents
A kind of reactive sputter-deposition rate stabilization control system and method Download PDFInfo
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- CN107630201A CN107630201A CN201711036339.7A CN201711036339A CN107630201A CN 107630201 A CN107630201 A CN 107630201A CN 201711036339 A CN201711036339 A CN 201711036339A CN 107630201 A CN107630201 A CN 107630201A
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Abstract
The invention discloses a kind of reactive sputter-deposition rate stabilization control system, including controller, shielding power supply, gas flow piezo electric valve, coating chamber and multichannel sensory feedback circuit；The controller, shielding power supply output current voltage and working gas, reaction gas flow piezo electric valve are controlled by control signal；Multichannel sensory feedback circuit, including plasma spectrometry feedback circuit, partial pressure feedback circuit and target current voltage feedback circuit.The present invention sputters spectrum by monitoring plasma reaction, controls working gas and reacting gas Precise levels, target current voltage etc. to realize that the rapid feedback of sputter procedure controls in real time, realize the stabilization of sputter deposition rate and ensure the stabilization of sputtered film composition, the invention is applicable not only to smaller substrate, single sputter material, has better effects to large area substrates, composite mixed sputter material.
Description
Technical field
The present invention relates to vacuum reaction sputter coating field, more particularly to a kind of reactive sputter-deposition rate stabilization control system
System and method.
Background technology
It is well known that vacuum coating technology is widely used to many industries, and in FPD, photovoltaic, new
It is referred to as core key technology in the industries such as type electronic information, energy-saving glass.Challenge of the future market to technique for vacuum coating technology
It is the large-scale production of high-quality precision optical thin film and electricity film etc..At present, with the progress of magnetron sputtering technique equipment
And the technological break-through of sputtering technology monitoring technology, just progressively it is applied to the preparation of high quality optical film.
Reactive sputtering is the technology for generating compound film, and the reactive sputtering of conventional method is set at the beginning
The flow of reacting gas makes sputtering be in appropriate oxidation model, belongs to opened loop control.When technological parameter changes, due to not
Energy adjust automatically gas flow and target current voltage, cause to react insufficient and sputter rate changes and makes plated film uneven.Especially
It is to some metal targets such as titanium, nickel, niobium, its reactive sputtering retardant curve is very narrow, and the course of work is not easy stability contorting, exists and splashes
Firing rate rate is low, the film layer quality of deposition is undesirable, it is unstable to metallic compound Composition Control repeatability, beat arc, target
The shortcomings of poisoning.
Corrective measure typically uses closed-loop control system, and reacting gas is anti-in being sputtered with gas sensor detection reaction
Pressure, reaction gas flow is adjusted with mass flowmenter, to realize the control to chemical composition.It is this for less substrate
The closed-loop control of single monitor channel can reach certain effect.But when chip area is larger and has to membrane uniformity higher
It is required that when, the only single input control of suitable gas sensor control at a high speed, accurate, stable difficult to realize, this is just high to preparing
The compound film of performance high quality brings difficulty.
The content of the invention
The shortcomings that it is an object of the invention to overcome prior art and deficiency, there is provided a kind of reactive sputter-deposition rate stabilization
Control system, the system are electric by Precise levels, the target current for monitoring plasma emission spectroscopy, working gas and reacting gas
Pressure etc. realizes that the rapid feedback of sputter procedure controls in real time, realizes the stabilization of sputter deposition rate and ensures sputtered film composition
Stabilization.Not only be applicable with less substrate, single sputter material, have to large area substrates, composite mixed sputter material compared with
Good effect.
Another object of the present invention is to a kind of reactive sputter-deposition rate stabilization control method.
The purpose of the present invention is realized by following technical scheme：
A kind of reactive sputter-deposition rate stabilization control system, including controller, shielding power supply, gas flow piezo electric valve and
Multichannel sensory feedback circuit；Wherein
Multichannel sensory feedback circuit, including plasma spectrometry feedback circuit, partial pressure feedback circuit and target current electricity
Press feedback circuit；Wherein plasma spectrometry feedback circuit detects the reaction of vacuum film coating chamber plasma by fibre-optical probe and splashed
Penetrate the intensity of spectrum in emission spectrum, and after filtering, amplification and preset operating point signal carry out difference operation；Partial pressure is anti-
Current feed circuit detects working gas and reacting gas partial pressure in vacuum film coating chamber by gas sensor, and by partial pressure value and Vacuum Deposition
The ratio of film room stagnation pressure value is converted to electric potential signal, and amplification electric potential signal is fed back in controller；Target current voltage feedback circuit
The error of output voltage values and given voltage value is amplified by high gain operational amplifier, output voltage values are deviateed into given electricity
The error of pressure value is fed back in controller；
Gas flow piezo electric valve, including reaction gas flow piezo electric valve, working gas flow piezo electric valve；
Controller, output voltage, the electric current of shielding power supply, and gas flow piezo electric valve, work are controlled by control signal
Make the gas flow of gas flow piezo electric valve；Adjusted according to the electric potential signal of working gas partial pressure and vacuum film coating chamber stagnation pressure ratio
The pulse width in economize on electricity source makes output voltage value stabilization in given voltage value；Simultaneously according to spectrum in reactive sputtering emission spectrum
The difference operation regulation reaction gas flow piezo electric valve of intensity.
Substrate and target are installed, substrate and target are oppositely arranged up and down, in substrate and target in the vacuum coating room
Produce plasma reaction sputtering zone；The target is twin target, is respectively symmetrically set in plasma reaction sputtering zone left and right ends
It is equipped with gas and is passed through mouth, fibre-optical probe, lambda sensor, gas sensor and shutter.
The twin target passes through two output ends of wire connecting power, the Current Voltage feedback of two output ends of power supply
To controller.
The fibre-optical probe, lambda sensor are connected with controller respectively, by the output signal of fibre-optical probe and lambda sensor
Feed back to controller.
The fibre-optical probe is N number of, N >=1, and the installation site of N number of light probe is plasma reaction sputtering zone both ends
And centre position.
The controller is plasma reaction monitor, controller respectively with reaction gas flow piezo electric valve, work gas
Body flow piezo electric valve is connected, and controls reacting gas, the partial pressure and flow of working gas respectively.
Another object of the present invention is realized by following technical scheme：
A kind of reactive sputter-deposition rate stabilization control method, is comprised the steps of：
The partial vacuum in vacuum coating room is extracted, makes to reach certain vacuum；
Working gas and reacting gas are passed through into vacuum coating room；
Preset target current voltage, working gas and reacting gas glow discharge is set to form plasma reaction sputtering zone, target
Material reactive sputtering, film is formed in substrate surface；
By multichannel sensory feedback circuit judges reactive sputtering state change, adjusted in real time according to reactive sputtering state change
Working gas flow and reaction gas flow, and keep the stabilization of sputtering current voltage.
The multichannel sensory feedback circuit includes plasma spectrometry feedback circuit, partial pressure feedback circuit and target current
Voltage feedback circuit.
Substrate and target are installed, substrate and target are oppositely arranged up and down, in substrate and target in the vacuum coating room
Produce plasma reaction sputtering zone；The target is twin target, is respectively symmetrically set in plasma reaction sputtering zone left and right ends
It is equipped with gas and is passed through mouth, fibre-optical probe, lambda sensor, gas sensor and shutter.
The present invention compared with prior art, has the following advantages that and beneficial effect：
1st, the present invention uses multichannel sensory feedback, obtains plasma light spectrum information, partial pressure information, target current respectively
Information of voltage carries out Comprehensive Control by pid algorithm.Based on feeding back with spectrum, gas feedback and Current Voltage feedback are taken into account,
Reach control more rapidly, accurately, stable.
2nd, because optic probe installation site directly determines spectral signature signal acquisition effect, the present invention is in reactive sputtering area
Fibre-optical probe is provided at both ends with, monitoring in real time sputters region-wide reaction condition, and the signal of spectrum sensor feedback is more accurate,
The uniformity of plated film can be improved.
3rd, plasma reaction spectrum of the invention and the monitoring of reacting gas partial pressure are combined, it is possible to achieve metallic compound
The accurate control of composition.
4th, the present invention passes through working gas partial pressure and the electric potential signal of vacuum chamber stagnation pressure ratio, target current voltage feedback circuit
Etc. realizing that the rapid feedback of sputter procedure controls in real time, the stabilization of sputter deposition rate is realized.
Brief description of the drawings
Fig. 1 is a kind of structural representation of reactive sputter-deposition rate stabilization control system of the present invention.
Fig. 2 is the structural representation using the vacuum film coating chamber of reactive sputter-deposition rate stabilization control system described in Fig. 1.
Wherein, reference implication is as follows：
Vacuum film coating chamber -1, substrate -2, gas be passed through mouth -3, fibre-optical probe -4, gas sensor -5, shutter -6, target -
7th, shielding power supply -8, controller -9, reaction gas flow piezo electric valve -10, working gas flow piezo electric valve -11.
Embodiment
With reference to embodiment and accompanying drawing, the present invention is described in further detail, but embodiments of the present invention are unlimited
In this.
Such as Fig. 1, a kind of reactive sputter-deposition rate stabilization control system includes：Controller, power supply, gas flow piezoelectricity
Valve, vacuum film coating chamber and multichannel sensory feedback circuit；The controller, shielding power supply output current electricity is controlled by control signal
Pressure and working gas, reaction gas flow piezo electric valve；Multichannel sensory feedback circuit, including plasma spectrometry feedback circuit, gas
Body partial pressure feedback circuit and target current voltage feedback circuit.
Above-mentioned plasma spectrometry feedback circuit is using fibre-optical probe detection vacuum film coating chamber plasma reactive sputtering
The intensity of special spectrum in emission spectrum, after filtering, amplification and preset operating point signal carry out difference operation after adjust reaction
Gas flow piezo electric valve.The fibre-optical probe setting is multiple, is separately mounted to plasma reaction sputtering zone both ends and interposition
Put.
Gas sensor installation was both come detection operations gas and reaction by above-mentioned gas partial pressure feedback circuit in a vacuum chamber
Partial pressure, and the ratio of partial pressure value and vacuum chamber stagnation pressure value is converted into electric potential signal, then feed back to control by signal amplification
In device processed.
Above-mentioned target current voltage feedback circuit is to be used as output valve and the mistake of set-point by the use of a high gain operational amplifier
Difference amplification, if output valve deviates set-point, then amplifier output error will feed back to controller, according to working gas point
The electric potential signal of pressure and vacuum chamber stagnation pressure ratio, the pulse width of controller regulation power supply make output voltage value stabilization in given electricity
Pressure value.
As shown in Fig. 2 vacuum is included using the vacuum film coating chamber of reactive sputter-deposition rate stabilization control system described in Fig. 1
Coating chamber 1, substrate 2, gas are passed through mouth 3, fibre-optical probe 4, gas sensor 5, shutter 6, target 7, power supply 8, controller 9, anti-
Answer gas flow piezo electric valve 10, working gas flow piezo electric valve 11.Opposition is provided with substrate 2 and target 7 in vacuum film coating chamber 1,
Target is twin target, and in course of reaction is sputtered, plasma reaction sputtering zone can be produced in substrate 2 and twin target 7, wait from
Daughter reactive sputtering area left and right ends respectively symmetrically set gas to be passed through mouth 3, fibre-optical probe 4, lambda sensor 5, shutter 6.Institute
State two output ends of the twin target 7 by wire connecting power 8, the output end current Voltage Feedback of power supply 8 to controller 9, institute
The control terminal for stating power supply 8 is connected to controller 9.In addition to the output end of power supply 8 feeds back to controller 9, above-mentioned fibre-optical probe 4
Controller 9 is also fed back to the output signal of lambda sensor 5, then controller 9 and reaction gas flow piezo electric valve 10 and work
Gas flow piezo electric valve 11 is connected, and controls partial pressure and flow.
The present embodiment additionally provides a kind of reactive sputtering plasma control method, and this method includes：
The partial vacuum in vacuum coating room is extracted, makes to reach certain vacuum；According to specific technological requirement, in advance
Set controller technological parameter information.
Preset working gas and reacting gas are passed through into vacuum coating room.
Preset target current voltage, working gas and reacting gas glow discharge is set to form plasma reaction sputtering zone, target
Material reactive sputtering, film is formed in substrate surface；
Adjustment power supply makes gas produce glow discharge, and above-mentioned working gas and reacting gas are between substrate and twin target
The plasma reaction sputtering zone of formation.
By multichannel sensory feedback circuit judges reactive sputtering state change, adjusted in real time according to reactive sputtering state change
Working gas flow and reaction gas flow, and keep the stabilization of sputtering current voltage.
Above-mentioned reactive sputtering process, whole sputter procedure is automatically controlled by controller.
The fibre-optical probe 4 that the plasma reaction sputtering zone formed in vacuum film coating chamber is set by Fig. 2 positions can obtain
Emission spectrum information in plasma is taken, the wavelength of specific light is obtained by band pass filter, so as to monitor material and gas
The extent of reaction, feeds back to controller, and controller adjusts target current voltage and working gas, reacting gas partial pressure by algorithm.
The gas sensor 5 that the plasma reaction sputtering zone formed in vacuum film coating chamber is set by Fig. 2 positions can be with
Partial pressure in vacuum is obtained, is directly fed back in controller 9, controller 9 adjusts reaction gas flow piezo electric valve by algorithm
10 are passed through reacting gas to control, and the flow of working gas is controlled by working gas flow piezo electric valve 11.
Above-mentioned 8 two output ends of power supply and a control terminal are connected with the end of controller 9, if the output end voltage value of feedback
Offset voltage set-point, then controller 9 will correct the pulse width of power supply 8, so that output voltage value stabilization is in voltage
Set-point.
It is anti-to take into account gas based on feeding back with plasma spectrometry for above-mentioned whole reactive sputter-deposition rate stabilization control system
Feedback and the multichannel sensory feedback of target current Voltage Feedback, power supply 8 and gas flow piezo electric valve 10 are controlled come more preferable by controller 9
Control reactive sputtering whole process.
Above-described embodiment is the preferable embodiment of the present invention, but embodiments of the present invention are not by above-described embodiment
Limitation, other any Spirit Essences without departing from the present invention with made under principle change, modification, replacement, combine, simplification,
Equivalent substitute mode is should be, is included within protection scope of the present invention.
Claims (9)
- A kind of 1. reactive sputter-deposition rate stabilization control system, it is characterised in that：Including controller, shielding power supply, gas stream Measure piezo electric valve and multichannel sensory feedback circuit；WhereinMultichannel sensory feedback circuit, including plasma spectrometry feedback circuit, partial pressure feedback circuit and target current voltage are anti- Current feed circuit；Wherein plasma spectrometry feedback circuit detects vacuum film coating chamber plasma reactive sputtering by fibre-optical probe and sent out Penetrate the intensity of spectrum in spectrum, and after filtering, amplification and preset operating point signal carry out difference operation；Partial pressure feedback electricity Road detects working gas and reacting gas partial pressure in vacuum film coating chamber by gas sensor, and by partial pressure value and vacuum film coating chamber The ratio of stagnation pressure value is converted to electric potential signal, and amplification electric potential signal is fed back in controller；Target current voltage feedback circuit passes through High gain operational amplifier amplifies the error of output voltage values and given voltage value, and output voltage values are deviateed into given voltage value Error feed back in controller；Gas flow piezo electric valve, including reaction gas flow piezo electric valve, working gas flow piezo electric valve；Controller, output voltage, the electric current of shielding power supply, and gas flow piezo electric valve, work gas are controlled by control signal The gas flow of body flow piezo electric valve；Electricity is adjusted according to the electric potential signal of working gas partial pressure and vacuum film coating chamber stagnation pressure ratio The pulse width in source makes output voltage value stabilization in given voltage value；Simultaneously according to the intensity of spectrum in reactive sputtering emission spectrum Difference operation regulation reaction gas flow piezo electric valve.
- 2. reactive sputter-deposition rate stabilization control system according to claim 1, it is characterised in that：The vacuum film coating chamber Substrate and target are inside installed, substrate and target are oppositely arranged up and down, and plasma reaction sputtering zone is produced in substrate and target； The target is twin target, be respectively symmetrically provided with plasma reaction sputtering zone left and right ends gas be passed through mouth, fibre-optical probe, Lambda sensor, gas sensor and shutter.
- 3. reactive sputter-deposition rate stabilization control system according to claim 2, it is characterised in that：The twin target passes through Two output ends of wire connecting power, the Current Voltage of two output ends of power supply feed back to controller.
- 4. reactive sputter-deposition rate stabilization control system according to claim 2, it is characterised in that：The fibre-optical probe, Lambda sensor is connected with controller respectively, and the output signal of fibre-optical probe and lambda sensor is fed back into controller.
- 5. reactive sputter-deposition rate stabilization control system according to claim 1, it is characterised in that：The fibre-optical probe is N number of, N >=1, the installation site of N number of light probe is plasma reaction sputtering zone both ends and centre position.
- 6. reactive sputter-deposition rate stabilization control system according to claim 1, it is characterised in that：The controller for etc. Gas ions reaction monitoring device, controller are connected with reaction gas flow piezo electric valve, working gas flow piezo electric valve, controlled respectively respectively Reacting gas processed, the partial pressure and flow of working gas.
- 7. a kind of reactive sputter-deposition rate stabilization control method, it is characterised in that comprise the steps of：The partial vacuum in vacuum coating room is extracted, makes to reach certain vacuum；Working gas and reacting gas are passed through into vacuum coating room；Preset target current voltage, working gas and reacting gas glow discharge is set to form plasma reaction sputtering zone, target is anti- It should sputter, film is formed in substrate surface；By multichannel sensory feedback circuit judges reactive sputtering state change, work is adjusted according to reactive sputtering state change in real time Gas flow and reaction gas flow, and keep the stabilization of sputtering current voltage.
- 8. reactive sputter-deposition rate stabilization control method according to claim 7, it is characterised in that the multichannel sensing is anti- Current feed circuit includes plasma spectrometry feedback circuit, partial pressure feedback circuit and target current voltage feedback circuit.
- 9. reactive sputter-deposition rate stabilization control method according to claim 7, it is characterised in that the vacuum film coating chamber Substrate and target are inside installed, substrate and target are oppositely arranged up and down, and plasma reaction sputtering zone is produced in substrate and target； The target is twin target, be respectively symmetrically provided with plasma reaction sputtering zone left and right ends gas be passed through mouth, fibre-optical probe, Lambda sensor, gas sensor and shutter.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109811321A (en) * | 2017-11-21 | 2019-05-28 | 佳能株式会社 | Sputtering equipment and method for manufacturing film |
| CN109811326A (en) * | 2019-01-17 | 2019-05-28 | 上海大学 | Utilize the method for HIPIMS method combination plated film intelligent monitoring refueling system prepare compound thin-film material |
| CN111270209A (en) * | 2018-12-05 | 2020-06-12 | 领凡新能源科技(北京)有限公司 | Steam sputtering device, control system and control method |
| CN113667955A (en) * | 2021-09-03 | 2021-11-19 | 广东轻工职业技术学院 | Plastic surface metallization reactive sputtering plasma control system and method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2516565Y (en) * | 2001-12-03 | 2002-10-16 | 深圳豪威真空光电子股份有限公司 | Device for preparing silica film by intemediate-frequency reactive magnet control sputtering |
| CN103866248A (en) * | 2014-04-02 | 2014-06-18 | 广州市光机电技术研究院 | Reactive sputtering plasma control system and method |
-
2017
- 2017-10-30 CN CN201711036339.7A patent/CN107630201A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2516565Y (en) * | 2001-12-03 | 2002-10-16 | 深圳豪威真空光电子股份有限公司 | Device for preparing silica film by intemediate-frequency reactive magnet control sputtering |
| CN103866248A (en) * | 2014-04-02 | 2014-06-18 | 广州市光机电技术研究院 | Reactive sputtering plasma control system and method |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109811321A (en) * | 2017-11-21 | 2019-05-28 | 佳能株式会社 | Sputtering equipment and method for manufacturing film |
| CN111270209A (en) * | 2018-12-05 | 2020-06-12 | 领凡新能源科技(北京)有限公司 | Steam sputtering device, control system and control method |
| CN111270209B (en) * | 2018-12-05 | 2023-12-12 | 东君新能源有限公司 | Steam sputtering device, control system and control method |
| CN109811326A (en) * | 2019-01-17 | 2019-05-28 | 上海大学 | Utilize the method for HIPIMS method combination plated film intelligent monitoring refueling system prepare compound thin-film material |
| CN113667955A (en) * | 2021-09-03 | 2021-11-19 | 广东轻工职业技术学院 | Plastic surface metallization reactive sputtering plasma control system and method |
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