CN107628608A - A kind of improved silicon carbide epitaxy method prepares the device of graphene - Google Patents
A kind of improved silicon carbide epitaxy method prepares the device of graphene Download PDFInfo
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- CN107628608A CN107628608A CN201711047474.1A CN201711047474A CN107628608A CN 107628608 A CN107628608 A CN 107628608A CN 201711047474 A CN201711047474 A CN 201711047474A CN 107628608 A CN107628608 A CN 107628608A
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- graphene
- air inlet
- reaction unit
- silicon carbide
- epitaxy method
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Abstract
The invention discloses the device that a kind of improved silicon carbide epitaxy method prepares graphene, the reaction unit is shaped as barrel-shaped, includes and is arranged on copper pipe on reaction unit inwall, the induction coil being arranged on copper pipe, the HF induction heating apparatus being connected with induction coil, multiple nichrome pallets and multiple metallic porous sheets；The bottom of the reaction unit is provided with a rotatable disc, and the disk is provided with air inlet, and the air inlet is connected by swivel joint with air inlet pipe, and multiple fan nozzles are provided with the air inlet pipe；The left side of the reaction unit is provided with evacuating valve.The apparatus structure of the production graphene is simple, and rotatable air inlet pipe causes reacting gas uniformly to be contacted with reactant so that the quality of the graphene of generation is homogeneous.
Description
Technical field
The present invention relates to the device that a kind of improved silicon carbide epitaxy method prepares graphene.
Background technology
Graphene be it is a kind of by carbon atom with sp2 hybridized orbits form hexangle type be in honeycomb lattice flat film, only
The two-dimensional material of one carbon atom thickness.Graphene can inlay lithium ion, so as to have when making cathode of lithium battery on two sides
Have common carbon material twice even more specific capacities, while the microcosmic wrinkled surface of graphene provides that lithium ion is extra to be deposited
Store up space.It is using SiC single crystal piece as raw material that silicon carbide epitaxial growth method, which prepares graphene, carries out deoxygenating compound processing, Ran Hou
High temperature（Generally>1400℃）And ultrahigh vacuum（Generally<10-6Pa）（Or the rare gas protective atmosphere such as argon gas）Under the conditions of make its table
Si vaporised atoms in layer, the remaining C atoms in surface from group situation by reconstructing, you can obtains being based on SiC single crystal substrate
Graphene, be widely regarded as realizing the unique channel that graphene is applied in large scale integrated circuit.At present, in production stone
In the device of black alkene, reacting gas generally enters uneven in reaction unit, while contact of the gas with reactant is different so that
Generate the streaking one of graphene.
The content of the invention
The shortcomings that it is an object of the invention to overcome prior art, there is provided a kind of improved silicon carbide epitaxy method prepares graphite
The device of alkene.
The purpose of the present invention is achieved through the following technical solutions：A kind of improved silicon carbide epitaxy method prepares graphene
Device, it is characterised in that：The reaction unit be shaped as it is barrel-shaped, include be arranged on copper pipe on reaction unit inwall, set
Induction coil on copper pipe, the HF induction heating apparatus being connected with induction coil, multiple nichrome pallets and multiple
Metallic porous sheet；The bottom of the reaction unit is provided with a rotatable disc, and the disk is provided with air inlet, the air inlet
Mouth is connected by swivel joint with air inlet pipe, and multiple fan nozzles are provided with the air inlet pipe；The left side of the reaction unit
Provided with evacuating valve.
Preferably, the copper pipe needs to carry out insulation processing, and the induction coil needs after being arranged on the copper pipe
With tying up around high-temperature insulation adhesive tape.
Preferably, the nichrome pallet both sides are welded on the metallic porous sheet, the metallic porous sheet with
The copper pipe is detachable connection.
Preferably, a hollow ring is provided with the metallic porous sheet so that the air inlet pipe can rotate.
Preferably, the air inlet pipe bypasses the nichrome pallet in s types, in the fan nozzle ancillary equipment
Portion.
Preferably, the HF induction heating apparatus is in the case of energization, can cause metal in reaction unit and anti-
Material is answered to be heated to 800 DEG C -1800 DEG C in the presence of mutual inducing current.
Preferably, it is provided with cooling tube on the outside of the reaction unit, its material is fibre reinforced plastics flexible pipe, the cooling tube
It is connected with water tank.
The present invention has advantages below：The apparatus structure of the production graphene is simple, and rotatable air inlet pipe causes reaction gas
Body uniformly contacts with reactant so that the quality of the graphene of generation is homogeneous.
Brief description of the drawings
Fig. 1 is the structural representation of the present invention；
In figure：1- copper pipes, 2- induction coils, 3- HF induction heating apparatus, 4- nichrome pallets, 5- metallic porous sheets,
6- rotatable discs, 7- air inlets, 8- swivel joints, 9- air inlet pipe, 10- fan nozzles, 11- evacuating valves, 12- cooling tubes,
13- water tanks.
Embodiment
The present invention will be further described below in conjunction with the accompanying drawings, but protection scope of the present invention is not limited to following institute
State.
As shown in figure 1, a kind of improved silicon carbide epitaxy method prepares the device of graphene, it is characterised in that：The reaction
Device be shaped as it is barrel-shaped, include be arranged on copper pipe 1 on reaction unit inwall, the induction coil 2 being arranged on copper pipe, with sense
Answer coil connected HF induction heating apparatus 3, multiple nichrome pallets 4 and multiple metallic porous sheets 5；The reaction dress
The bottom put is provided with a rotatable disc 6, and the disk is provided with air inlet 7, the air inlet 7 by swivel joint 8 with
Air inlet pipe phase 9 is connect, and multiple fan nozzles 10 are provided with the air inlet pipe 9；The left side of the reaction unit is provided with evacuating valve
11。
Preferably, the copper pipe 1 needs to carry out insulation processing, and the induction coil 2 needs after being arranged on the copper pipe
With tying up around high-temperature insulation adhesive tape.
Preferably, the both sides of nichrome pallet 4 are welded on the metallic porous sheet 5, the metallic porous sheet 5
It is detachable connection with the copper pipe 1.
Preferably, it is provided with a hollow ring on the metallic porous sheet 5 so that the air inlet pipe 9 can rotate.
Preferably, the air inlet pipe 9 bypasses the nichrome pallet 4 in s types, in the fan nozzle ancillary equipment
Portion.
Preferably, the HF induction heating apparatus 3 is in the case of energization, can cause metal in reaction unit and anti-
Material is answered to be heated to 800 DEG C -1800 DEG C in the presence of mutual inducing current.
Preferably, it is provided with cooling tube 12 on the outside of the reaction unit, its material is fibre reinforced plastics flexible pipe, the cooling
Pipe 12 is connected with water tank 13.
The course of work of the present invention is as follows：Preferably, first it is placed on nickel chromium triangle using the double monocrystalline 4H-SiC that throw of zero bias as substrate
On ferroalloy pallet 4, evacuating valve is opened, by vacuum pumping in reaction unit, it is ensured that reach the state of perfect vacuum in device.
Then reacting gas is passed through from air inlet, according to the stage of reaction, adjusts reaction temperature.Reacting gas is along air inlet pipe 9 from nozzle
10 discharge and are reacted with reactant, so as to form graphene in metal tray 4.During the course of the reaction, cooling tube is utilized
12 pairs of whole instruments carry out cooling processing, to have the function that to protect instrument.The apparatus structure is simple, and reaction unit is L-shaped, carries
The high utilization rate of reacting gas, improve the output of graphene.The apparatus structure of the production graphene is simple, it is rotatable enter
Tracheae causes reacting gas uniformly to be contacted with reactant so that the quality of the graphene of generation is homogeneous.
Above-described is only the preferred embodiment of the present invention, it is noted that for one of ordinary skill in the art
For, on the premise of different disengaging the invention designs, various modifications and improvements can be made, these belong to this hair
Bright protection domain.
Claims (7)
1. a kind of improved silicon carbide epitaxy method prepares the device of graphene, it is characterised in that：The reaction unit is shaped as justifying
Tubbiness, include and be arranged on copper pipe on reaction unit inwall, the induction coil being arranged on copper pipe, the height being connected with induction coil
Frequency induction heating equipment, multiple nichrome pallets and multiple metallic porous sheets；The bottom of the reaction unit is provided with one
Rotatable disc, the disk are provided with air inlet, and the air inlet is connected by swivel joint with air inlet pipe, the air inlet pipe
On be provided with multiple fan nozzles；The left side of the reaction unit is provided with evacuating valve.
2. a kind of improved silicon carbide epitaxy method according to claim 1 prepares the device of graphene, it is characterised in that：Institute
Stating copper pipe is needed to carry out insulation processing, and the induction coil is needed after being arranged on the copper pipe with tying up around high-temperature insulation glue
Band.
3. a kind of improved silicon carbide epitaxy method according to claim 1 prepares the device of graphene, it is characterised in that：Institute
State nichrome pallet both sides to be welded on the metallic porous sheet, the metallic porous sheet is detachable with the copper pipe
Connection.
4. a kind of improved silicon carbide epitaxy method according to claim 1 prepares the device of graphene, it is characterised in that：Institute
State and a hollow ring is provided with metallic porous sheet so that the air inlet pipe can rotate.
5. a kind of improved silicon carbide epitaxy method according to claim 1 prepares the device of graphene, it is characterised in that：Institute
State air inlet pipe and bypass the nichrome pallet in s types, inside the fan nozzle ancillary equipment.
6. a kind of improved silicon carbide epitaxy method according to claim 1 prepares the device of graphene, it is characterised in that：Institute
HF induction heating apparatus is stated in the case of energization, metal in reaction unit and reactive material can be caused in mutual inducing current
800 DEG C -1800 DEG C are heated under effect.
7. a kind of improved silicon carbide epitaxy method according to claim 1 prepares the device of graphene, it is characterised in that：Institute
State and be provided with cooling tube on the outside of reaction unit, its material is fibre reinforced plastics flexible pipe, and the cooling tube is connected with water tank.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711047474.1A CN107628608A (en) | 2017-10-31 | 2017-10-31 | A kind of improved silicon carbide epitaxy method prepares the device of graphene |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711047474.1A CN107628608A (en) | 2017-10-31 | 2017-10-31 | A kind of improved silicon carbide epitaxy method prepares the device of graphene |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107628608A true CN107628608A (en) | 2018-01-26 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711047474.1A Withdrawn CN107628608A (en) | 2017-10-31 | 2017-10-31 | A kind of improved silicon carbide epitaxy method prepares the device of graphene |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111892042A (en) * | 2020-08-07 | 2020-11-06 | 河南墨特石墨烯科技有限公司 | Device for producing graphene and method for producing graphene by using device |
-
2017
- 2017-10-31 CN CN201711047474.1A patent/CN107628608A/en not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111892042A (en) * | 2020-08-07 | 2020-11-06 | 河南墨特石墨烯科技有限公司 | Device for producing graphene and method for producing graphene by using device |
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| SE01 | Entry into force of request for substantive examination | ||
| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20180126 |
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| WW01 | Invention patent application withdrawn after publication |