CN107611247A - Growth tellurium and tellurides nano-wire array are in the method on conductive base and tellurium and tellurides nano wire thermoelectric device - Google Patents
Growth tellurium and tellurides nano-wire array are in the method on conductive base and tellurium and tellurides nano wire thermoelectric device Download PDFInfo
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Abstract
The present invention is to provide the method and tellurium and tellurides nano wire thermoelectric device of growth tellurium and tellurides nano-wire array.Tellurium and tellurides nano wire can show n types or p type pyroelecthc properties.Tellurium and tellurides nano wire thermoelectric device include first electrode, in multiple tellurium and tellurides nano-wire arrays and second electrode that tool pyroelecthc properties are formed in first electrode.Conducting polymer can be separately included between tellurium and tellurides nano-wire array and second electrode.Whereby, through the nanoscale characteristic of tellurium and tellurides nano wire thermoelectric material, conversion efficiency of thermoelectric can be greatly improved.Furthermore such a thermoelectric device has frivolous volume and flexibility characteristic not by size size limit, possesses in vast applications such as clothing, automobile, factory's used heat.
Description
Technical field
The present invention is on a kind of method and tellurium and tellurides nano wire thermoelectricity of grow up tellurium and tellurides nano-wire array
Device；It is particularly sayed, the present invention is directly in the unrestricted tellurium of size and the tellurium of growing up on a variety of conductive bases on a kind of
The method of compound nano-wire array and the tellurium to be prepared the methods of this and tellurides nano wire thermoelectric device.
Background technology
Electric power has been that institute is required in existing daily life.Many electronic devices all need driven by power to operate.Have more
Kind produces electric-powered manner, such as solar power generation, wind-power electricity generation, hydroelectric generation and nuclear energy power generation etc..It is rapidly depleting based on resource
And the green environmentally friendly subject under discussion of energy, people are just eager to look for the power source of next generation.
Thermoelectric device has been widely used in such as heating/cooling, and recuperation of heat/electricity generation system.Existing such as freezing, sky
The application fields such as tune, industrial waste heat recovery, temperature control and thermoelectric power generation, are all based on thermoelectric device.Thermoelectric device
Running be to be based on pyroelectric effect.Pyroelectric effect refers to convert heat energy into electric energy；Or electric energy is converted to a kind of phenomenon of heat energy.
Pyroelectric effect general principle, be a thermoelectric material by the temperature difference when, electromotive force will be generated, and then form electric current and can generate electricity.Example
As in a thermoelectric device formed with p-type semi-conductor thermoelectric material and n-type semi-conductor thermoelectric material, will by electronics and
Flow through p-type semi-conductor thermoelectric material and n-type semi-conductor thermoelectric material and carry out heat transfer in hole.
The heat energy of loss can be converted into electric energy by thermoelectric generator under the situation without remaining external force and mechanical energy,
Energy loss is reduced, energy utilization rate is improved and reduces thermal pollution.The efficiency of thermoelectric material can be by thermoelectricity merit figue ZT=S2σ
T/ (κ) is defined, and wherein parameter S is Seebeck coefficient, T is temperature, σ is electrical conductivity and κ is pyroconductivity.The wherein high-quality system of thermoelectricity
Each parameter in number ZT influences each other, and causes to be difficult to seek obtaining preferable thermoelectric material.Therefore a preferable thermoelectric material need to possess
High conductivity is to avoid resistance from causing electric power loss, while preferable thermoelectric material also preferably possesses low-thermal conductivity and makes both ends
The temperature difference not reason heat transfer and change, thus can obtain maximum thermoelectricity merit figue.
Edge this, flourishing for nanosecond science and technology brings brand-new opportunity for thermoelectric material, when as low as several nanometers of test-material yardstick
Surface atom will be made to improve non-surface atom ratio, skin effect will significantly show.In addition, under nanoscale, material
Electronic energy rank quantifies phenomenon will be more notable, referred to herein as quantum size effect (Quantum size effect), therefore nanometer material
There were significant differences with logical bulk for the physical property of material.Nano material possesses new physical property and interface phenomenon, it is contemplated that should be able to dash forward
It is broken to suffer the too low bottleneck of thermoelectric material conversion efficiency of thermoelectric at present, such as under nanoscale, material lattice is advantageous to increase sound
The scattering frequency of son, pyroconductivity κ thus reduction, can greatly improve conversion efficiency of thermoelectric whereby.With thermoelectric material nanosizing,
Its conversion efficiency of thermoelectric improves, and thermoelectric material application also will be more extensive, such as in people's livelihood industry, hospitality industry, semiconductor
Industry etc., in the application tool very high potential in future.In addition, for example including industrial heat energy (as industry high/low rank temperature difference discharge heat energy,
Castoff heat energy, heat exchanger heat energy), vehicle emissions heat energy (such as fuel vehicle heat energy, engine heat energy), environment thermal energy (such as
Solar thermal energy/hot spring underground heat) and other heat energy (such as hot water temperature difference heat energy, house utensil heat energy, other industry heat energy) give birth to
Into used heat can more effectively be recycled.Accordingly, in the market still pole, which need to be developed, can manufacture tool nanoscale on a large scale
The method of thermoelectric device.
The content of the invention
The present invention provides extensive and quick thermoelectricity tellurium and the telluride nano-material of preparing in the method on conductive base, with
And use the tellurium and tellurides nano wire thermoelectric device made by the method.Through the tellurium and tellurides nanometer for possessing nanoscale
Line thermoelectric material, electrical conductivity can be improved and reduce pyroconductivity, greatly improve conversion efficiency of thermoelectric.
For the above-mentioned purpose, growth tellurium and tellurides nano-wire array provided by the present invention be in the method on conductive base,
It is to form tellurium and tellurides nano wire thermoelectric material, and is prepared into thermoelectric device.In one embodiment, grow up tellurium and tellurides
Nano-wire array includes in the method on conductive base：Prepare a conductive base；Preparation includes a tellurium predecessor and a reducing agent
A mixed solution；The conductive base is immersed in the mixed solution；And the tellurium predecessor and the reducing agent are made in the conduction
Reaction forms multiple tellurium and tellurides nano wires on base material.
In the method on conductive base, conductive base can be rigid or soft for above-mentioned growth tellurium and tellurides nano-wire array
Property.
In the method on conductive base, conductive base can be reducing activity for above-mentioned growth tellurium and tellurides nano-wire array
Stronger material, its material can include lithium, rubidium, potassium, caesium, barium, strontium, calcium, sodium, magnesium, aluminium, manganese, beryllium or carbon, and conductive base can be
Threadiness, film-form, bulk, sheet, irregular, netted or vesicular texture.Netted and fibrous conductive base can wrap
Base material unit containing multiple criss-cross arrangements, these telluriums and tellurides nano wire surround and are formed at each base material cell surface.
In above-mentioned growth tellurium and tellurides nano-wire array in the method on conductive base, tellurium predecessor material can be
Te、TeO、TeO2、TeO3、Te2O5、H2TeO3、K2TeO3、Na2TeO3、H2TeO4、K2TeO4、Na2TeO4、H2Te、NaHTe、
(NH4)2Te、TeCl4、MezTe、〔Zn(TePh)2(tmeda)) (tmeda=N, N, N ', N '-
teramethylethylenediamine)、Ph2SbTeR (R=Et, Ph).
In above-mentioned growth tellurium and tellurides nano-wire array in the method on conductive base, the multiple tellurium and tellurides
Nano wire can be p-type or n-type thermoelectric material, and its material can include bismuth telluride (Bismuth telluride), lead telluride
(Lead telluride), silver telluride (Silver telluride), telluride mercury (Mercury telluride), cadmium telluride
(Cadmium telluride), antimony telluride (Antimony telluride), telluride rubidium (Rubidium telluride), tellurium
Change manganese (Manganese (II) telluride), zinc telluridse (Zinc telluride), telluride lithium (Lithium
Telluride), cesium telluride (Cesium telluride), telluride potassium (Potassium Telluride), telluride sodium (Sodium
Telluride), hydrotelluric acid (Hydrogen telluride), arsenic telluride (Arsenic (III) telluride), telluride germanium
(Germanium telluride), gold telluride (Gold telluride), telluride iron (Iron telluride), telluride palladium
(Palladium telluride), telluride lanthanum (Lanthanum telluride), telluride tin (Tin telluride), telluride
Aluminium (Aluminum telluride), telluride europium (Europium telluride) and its alloy.These telluriums and tellurides nanometer
Line can react formation under room temperature or high temperature.
Above-mentioned growth tellurium and tellurides nano-wire array also include in the method on conductive base：Modulation tellurium predecessor
And each tellurium of concentration rate and then modulation of reducing agent and the length and width of tellurides nano wire.
In another embodiment, a tellurium and tellurides nano wire thermoelectric device provided by the present invention, it includes one first
Electrode, at least tellurium being formed in first electrode and tellurides nano-wire array and it is formed at least a tellurium and tellurides and receives
A second electrode on nanowire arrays and conducting polymer.
In above-mentioned tellurium and tellurides nano wire thermoelectric device, first electrode material can be the stronger material of reducing activity, wrap
Containing lithium, rubidium, potassium, caesium, barium, strontium, calcium, sodium, magnesium, aluminium, manganese, beryllium or carbon, and first electrode can be threadiness, film-form, bulk, piece
Shape, irregular, netted or vesicular texture.
In above-mentioned tellurium and tellurides nano wire thermoelectric device, a p-type tellurium and tellurides nano-wire array can be included, and
The n-type tellurium and tellurides nano-wire array being connected with p-type tellurium and tellurides nano-wire array；Or multiple sequentially heaps can be included
What folded p-type tellurium and tellurides nano-wire array and multiple and these p-type telluriums and tellurides nano-wire array were staggeredly stacked
N-type tellurium and tellurides nano-wire array.
In above-mentioned tellurium and tellurides nano wire thermoelectric device, in an at least tellurium and tellurides nano-wire array and second electrode
Between can include a conducting polymer, its material can be polyaniline (PANI), polythiophene (PTH), poly (3,4-
ethylenedioxythiophene):poly(styrenesulfonate)(PEDOT:PSS)、polyacetylene(PA)、
Polypyrrole (PPY), polycarbazoles (PC) or polyphenylenevinylene (PPV).
Second electrode can be metal, conductive oxide or conducting polymer, its material can include indium tin oxide, gold, silver,
Platinum, aluminium, nickel, copper, titanium, chromium, selenium or the alloy formed by above-mentioned metal.
Brief description of the drawings
Fig. 1 is to illustrate growth tellurium and tellurides nano-wire array according to one embodiment of the invention in the side on conductive base
Method flow chart；
Fig. 2 is depicted in being formed the schematic diagram of tellurium and tellurides nano-wire array on netted conductive base；
Fig. 3 is depicted in being formed the schematic diagram of tellurium and tellurides nano-wire array on the conductive base of sheet；
Fig. 4 A are depicted in netted and material by the tellurium and tellurides nanometer linear array that are formed on the conductive base of carbon fiber
Row electron microscope (SEM) figure；
Fig. 4 B are to illustrate the tellurium and tellurides nano wire electron microscopic that tellurium and tellurides nano-wire array are included in Fig. 4 A
Mirror figure；
Fig. 5 A are depicted in sheet and material is electric by the tellurium and tellurides nano-wire array formed on the conductive base of aluminium
Sub- microscope (SEM) figure；
Fig. 5 B are to illustrate the tellurium and tellurides nano wire electron microscopic that tellurium and tellurides nano-wire array are included in Fig. 5 A
Mirror figure；
Fig. 6 is to illustrate the tellurium and tellurides nano wire thermoelectric device structural representation according to one embodiment of the invention；
Fig. 7 is a use state figure of the tellurium and tellurides nano wire thermoelectric device that illustrate Fig. 6；
Fig. 8 A be illustrate Fig. 6 tellurium and tellurides nano wire thermoelectric device with difference variation voltage output figure；
Fig. 8 B be illustrate Fig. 6 tellurium and tellurides nano wire thermoelectric device with difference variation electric current output figure；
Fig. 9 illustrates to be stacked into p-type tellurium and tellurides nano-wire array and n-type tellurium and tellurides nano-wire array
Tellurium and tellurides nano wire thermoelectric device structural representation；
Figure 10 is an application examples of the tellurium and tellurides nano wire thermoelectric device that illustrate Fig. 9；
Figure 11 is illustrated with multilayer p-type tellurium and tellurides nano-wire array and multilayer n-type tellurium and tellurides nanometer linear array
Arrange the tellurium and tellurides nano wire thermoelectric device structural representation being staggeredly stacked；
Figure 12 be illustrate in Figure 11 with multilayer p-type tellurium and tellurides nano-wire array and multilayer n-type tellurium and tellurides
The tellurium and tellurides nano wire thermoelectric device that nano-wire array is staggeredly stacked with difference variation voltage output figure；
Figure 13 is an application examples of the tellurium and tellurides nano wire thermoelectric device that illustrate Figure 11；
Figure 14 is the tellurium and another structure kenel schematic diagram of tellurides nano wire thermoelectric device for illustrating Figure 11；
Figure 15 is the application examples for illustrating tellurium and tellurides nano wire thermoelectric device in Figure 13；
Figure 16 is the another application example for illustrating tellurium and tellurides nano wire thermoelectric device in Figure 13；And
Figure 17 is the another application examples for illustrating tellurium and tellurides nano wire thermoelectric device in Figure 13.
Embodiment
It the following drawings illustrate multiple embodiments of the present invention.As clearly stated, the details in many practices
It will be explained in the following description.It should be appreciated, however, that the details in these practices is not applied to limit the present invention.Also
It is to say, in section Example of the present invention, the details in these practices is non-essential.In addition, for the sake of simplifying accompanying drawing, some
Known usual structure will be illustrated in a manner of simply illustrating in the accompanying drawings with element.
Fig. 1 is refer to, it is to illustrate growth tellurium and tellurides nano-wire array according to one embodiment of the invention in conduction
Method flow diagram on base material.Though inquire into recently by thermoelectric material nanosizing to increase conversion efficiency of thermoelectric, however, nanometer
Material is relatively new material, and its substance characteristics there is no method to be completely familiar with grasp, therefore be intended to Application of micron in known thermoelectricity
During device, with technology now, often need that the nano material of large area can be manufactured through complicated processing procedure, therefore its manufacturing cost
It is still high, and it is not used to volume production.Edge this, invention demonstrates a method simple tellurium and the tellurides nano-wire array of preparing in leading
Method on electric base material, its can at room temperature in a simple manner in synthesizing tellurium and tellurides nano-wire array on a conductive base,
Large-scale tellurium and tellurides nano-wire array can be wherein prepared according to demand on conductive base, and this prepares tellurium and tellurides is received
Substantially comprised the steps of in the method for nanowire arrays.
Step S101, prepare a conductive base.
Step S102, surface clean is carried out to conductive base.
Step S103, prepare the mixed solution comprising a tellurium (Te) predecessor and a reducing agent.
Step S104, conductive base is immersed in mixed solution.
Step S105, tellurium predecessor and reducing agent is made to form multiple tellurium and tellurides nano wires in reaction on conductive base.
Step S106, these telluriums and tellurides nano wire are arranged in forming a tellurium and tellurides nanometer linear array on conductive base
Row.
In above-mentioned steps S103, tellurium predecessor material may be selected to be Te, TeO, TeO2、TeO3、Te2O5、H2TeO3、
K2TeO3、Na2TeO3、H2TeO4、K2TeO4、Na2TeO4、H2Te、NaHTe、(NH4)2Te、TeCl4、MezTe、〔Zn(TePh)2
(tmeda)) (tmeda=N, N, N ', N '-teramethylethylenediamine) or Ph2SbTeR (R=Et, Ph).Formed
A kind of mode of mixed solution is uniformly mixed for tellurium predecessor powder is inverted in the reducing agent of liquid.
In some embodiments, conductive base in above-mentioned steps S101 can be fiber, film-form, bulk, sheet, not advise
Then shape, netted or vesicular texture.For example, it refer to Fig. 2 and Fig. 3, Fig. 2 be depicted on netted conductive base 110
Form the schematic diagram of tellurium and tellurides nano-wire array 112；Fig. 3 is depicted in forming tellurium and tellurium on the conductive base 110 of sheet
The schematic diagram of compound nano-wire array 112.In Fig. 2, for microcosmic, netted conductive base 110 is can be considered by multiple
The criss-cross arrangement of base material unit 111 forms, therefore on each surface of base material unit 111, it is formed around with multiple telluriums and tellurides
Nano wire 112a, and arrangement form tellurium and tellurides nano-wire array 112.It is in Fig. 3, then visual that multiple telluriums and tellurides are received
Rice noodles 112a forms tellurium and tellurides nano-wire array 112 in being spaced on sheets of conductive base material 110.
, can for the length and width of tellurium and tellurides nano wire 112a in above-mentioned Fig. 1 step S105 and step S106
It is well controlled through the concentration rate of modulation tellurium predecessor and reducing agent.
In a preferable example, no matter above-mentioned conductive base 110 is for fiber, film-form, bulk, sheet, irregular, netted
Or vesicular texture, its material may be selected the stronger material of reducing activity, for example, lithium, rubidium, potassium, caesium, barium, strontium, calcium, sodium, magnesium,
Aluminium, manganese, beryllium or carbon.This is because in can obtain arranging preferable tellurium and tellurides nano-wire array 112 in such a material.Netted
The application mode of conductive base 110 will be addressed in rear embodiment.
It please continue reference picture 4A to Fig. 5 B.Fig. 4 A are depicted in fiber and material is by forming on the conductive base 110 of carbon
Tellurium and the electron microscope of tellurides nano-wire array 112 (SEM) figure；Fig. 4 B are to illustrate tellurium and tellurides nano-wire array in Fig. 4 A
112 telluriums included and tellurides nano wire 112a electron microscope pictures.Foregoing tellurium and tellurides nano-wire array 112 and conduction
Base material 110 is shown in that Fig. 3, Fig. 5 A are depicted in sheet and material is by the tellurium and tellurides nanometer that are formed on the conductive base 110 of aluminium
The electron microscope of linear array 112 (SEM) figure；Fig. 5 B are to illustrate the tellurium that tellurium and tellurides nano-wire array 112 are included in Fig. 5 A
And tellurides nano wire 112a electron microscope pictures.In Fig. 4 A and Fig. 4 B, it can be seen that in the conductive base that fiber and material are carbon
On 110 each surface of base material unit 111, multiple tellurium and tellurides nano wire 112a, and arrangement form tellurium and tellurium are formed around with
Compound nano-wire array 112.In Fig. 5 A and Fig. 5 B, then it can be seen that being formed on the conductive base 110 of sheet and material by aluminium
Multiple tellurium and tellurides nano wire 112a, and arrangement form tellurium and tellurides nano-wire array 112.
It please continue reference picture 6, it is to illustrate the tellurium and the knot of tellurides nano wire thermoelectric device 200 according to one embodiment of the invention
Structure schematic diagram.Using the tellurium obtained by the above method and tellurides nano-wire array 230, tellurium and telluride can be formed in a simple manner
Thing nano wire thermoelectric device 200.For example, in Fig. 6, first method described above in a first electrode 210 in forming at least one
Tellurium and tellurides nano-wire array 230.First electrode can be considered the conductive base 110 in previous embodiment, because of conductive base 110
Material is all the good conductor of electricity, therefore can be used directly as first electrode 210.Continue, in tellurium and tellurides nano-wire array 230
On can coating metal colloid or evaporation common metal used as second electrode 220, now i.e. composition tellurium and tellurides nano wire
The basic structure of thermoelectric device 200.Second electrode 220 can be metal, conductive oxide or conducting polymer, and its material can include
Indium tin oxide, gold, silver, platinum, aluminium, nickel, copper, titanium, chromium, selenium or the alloy formed by above-mentioned metal.In a preferable example, in tellurium
And it be able to can be included formed with a conducting polymer 240, its material between tellurides nano-wire array 230 and second electrode 220
polyaniline(PANI)、polythiophene(PTH)、poly(3,4-ethylenedioxythiophene):poly
(styrenesulfonate)(PEDOT:PSS)、polyacetylene(PA)、polypyrrole(PPY)、
Polycarbazoles (PC) or polyphenylenevinylene (PPV) etc..Conduction can be helped through conducting polymer 240,
The characteristic performance of tellurium and tellurides nano wire thermoelectric device 200 can be increased.Now, on tellurium and tellurides nano-wire array 230
It is during the lower formation temperature difference, i.e., relative to form an electromotive force, and form a voltage difference.First electrode 210 and second electrode 220 are balance
Electric charge, its free electron flow to an external circuit and produce electric current output.
It please continue reference picture 7, Fig. 7 is a use state figure of the tellurium and tellurides nano wire thermoelectric device 200 that illustrate Fig. 6.
During practical application, tellurium and tellurides nano wire thermoelectric device 200 are separately in 210 times one supporting substrates 250 of setting of first electrode.Tellurium and
Tellurides nano wire thermoelectric device 200 in using when can destroy or force to yield, be adaptable to the irregular body surface kenels of various bendings.
Please continue reference picture 8A and Fig. 8 B, Fig. 8 A be illustrate Fig. 6 tellurium and tellurides nano wire thermoelectric device 200 become with the temperature difference
The voltage output of change；Fig. 8 B be illustrate Fig. 6 tellurium and tellurides nano wire thermoelectric device 200 with difference variation electric current export
Figure.Tellurium and tellurides nano wire thermoelectric device 200 are used in this as generating, and its size is 0.5cm*0.5cm, and the temperature difference becomes
Change by -6 to 64 DEG C.It is that voltage can reach 780nA up to 3.2mV, electric current at 64 DEG C in the temperature difference.Its voltage or electric current output can
Lifted by increasing the size of tellurium and tellurides nano wire thermoelectric device 200, and work as tellurium and tellurides nano wire thermoelectricity
The temperature difference of the upper and lower ends of device 200 always in the presence of, a stable and lasting electricity output can be obtained.
It please continue reference picture 9 and Figure 10.Fig. 9 is illustrated with p-type tellurium and tellurides nano-wire array 330 and n-type tellurium and tellurium
The tellurium and the structural representation of tellurides nano wire thermoelectric device 300 that compound nano-wire array 340 connects into；Figure 10 is to illustrate Fig. 9
Tellurium and tellurides nano wire thermoelectric device 300 an application examples.Preceding embodiment tellurium and tellurides nano wire thermoelectric device such as
It can be expanded and obtain wider array of application.In Fig. 9, the one of stacking is formed between first electrode 310 and second electrode 320
P-type tellurium and the n-type tellurium of tellurides nano-wire array 330 and one and tellurides nano-wire array 340.The implementation of first electrode 310
Kenel, can analogy previous embodiment conductive base 110, then on fiber in this embodiment, and material is carbon.In Figure 10
In, tellurium and the structure such as carbon cloth of tellurides nano wire thermoelectric device 300, it can be applied in various dress material.Now, available for receiving
Collect heat energy, apply to the application such as wisdom clothing and firefighting clothing.
It please continue reference picture 11 to Figure 13.Figure 11 is illustrated with multilayer p-type tellurium and tellurides nano-wire array 330 and multilayer
N-type tellurium and the array of tellurides nano wire 340 are cross-linked the tellurium being stacked into and the structure of tellurides nano wire thermoelectric device 300 is shown
It is intended to；Figure 12 is to illustrate in Figure 11 to receive with multilayer p-type tellurium and tellurides nano-wire array 330 and multilayer n-type tellurium and tellurides
The tellurium and tellurides nano wire thermoelectric device 300 that the array interleaved series of rice noodles 340 are stacked into difference variation voltage output；Figure
13 be an application examples of the tellurium and tellurides nano wire thermoelectric device 300 that illustrate Figure 11.
In Figure 11, with multilayer first electrode 310/p- types tellurium and tellurides nano-wire array 330/ second electrode, 320 shapes
Into structure, and the knot that multilayer first electrode 310/n- types tellurium and the second electrode 320 of tellurides nano-wire array 340/ are formed
The tellurium and tellurides nano wire thermoelectric device 300 that structure is staggeredly stacked.First electrode 310 is threadiness, film in this example
Shape or sheet, and the tellurium and tellurides nano wire thermoelectric device 300 of large area can be formed.Figure 12 be illustrate Figure 11 multilayer tellurium and
Tellurides nano wire thermoelectric device 300 is used in this as generating, and its size is 1cm*1.5cm, with p-type tellurium and telluride
Thing nano-wire array 330 and the array interleaved series of multilayer n-type tellurium and tellurides nano wire 340 stack 10 layers, and difference variation is by 0
To 50 DEG C.It is that voltage is up to 127mV at 50 DEG C in the temperature difference；, can be by tellurium and tellurides as depicted in Figure 13 in an embodiment
Nano wire thermoelectric device 300 is layed in vapour, internal combustion engine locomotive to collect heat energy.
Please continue reference picture 14, its be illustrate Figure 11 tellurium and 300 another structure kenel of tellurides nano wire thermoelectric device show
It is intended to.In Figure 14, tellurium and tellurides nano wire thermoelectric device 300 can be arc-shaped, and can arbitrarily destroy or force to yield.In some embodiments
In, tellurium and tellurides nano wire thermoelectric device 300 also can be remaining geometry.The tellurium and tellurides nanometer of this display present invention
Line thermoelectric device 300 can apply kenel with a variety of.Various possible application examples will be illustrated in subsequent paragraph.
It please continue reference picture 15 to Figure 17.Figure 15 is illustrate tellurium and tellurides nano wire thermoelectric device 300 in Figure 14 one
Application examples；Figure 16 is the another application example for illustrating tellurium and tellurides nano wire thermoelectric device 300 in Figure 14；And Figure 17 is to paint
The another application examples of tellurium and tellurides nano wire thermoelectric device 300 in diagram 14.
In Figure 15, tellurium and tellurides nano wire thermoelectric device 300 can be surrounded on to the blast pipe 400 of vapour, locomotive with collection
Discharge the heat energy of waste gas.In Figure 16, tellurium and tellurides nano wire thermoelectric device 300 are applied to collect Industry Waste tank 500
The heat energy of middle waste water.In Figure 17, tellurium and tellurides nano wire thermoelectric device 300 are applied to collector with the institute of shower nozzle 600
Flow out the heat energy of hot water.
General principle based on pyroelectric effect, foregoing tellurium and tellurides nano wire thermoelectric device 300 are not simply possible to use in receipts
Collect heat energy.Tellurium and tellurides nano wire thermoelectric device 300 can also be used for cooling.For example, can be by tellurium and tellurides nanometer
Line thermoelectric device 300 combines with electronic wafer and electronic wafer is cooled down.Also or, tellurium and tellurides nano wire thermoelectric device
300 can be used to temperature control.
To sum up, disclosed tellurium and tellurides nano-wire array preparation and its application in thermoelectric generator, tool
There are following advantages：(1) simple and fast is made and manufacturing cost is low, the tellurium and tellurides nanometer linear array of the large area that can produce once
Row；(2) it is without the use of organic solvent in processing procedure, meets Green Chemistry and environmental requirement；(3) tellurium and tellurides nano wire thermoelectricity
Device is frivolous and flexible, can be widely applied to various object；(4) pass through and select tellurium and tellurides nano pyroelectric material, its lattice
Direction is consistent, and can effectively reduce its thermal conductivity, and then conversion efficiency of thermoelectric is substantially improved；(5) the multiple tellurium and tellurides
Nano-wire array can be selected as p-type and n-type thermoelectric material.
Although the present invention is disclosed above with embodiment, so it is not limited to the present invention, therefore the guarantor of the present invention
Shield scope is worked as to be defined depending on the scope of which is defined in the appended claims.
Claims (15)
1. a kind of growth tellurium and tellurides nano-wire array be in the method on conductive base, it is to form tellurium and tellurides is received
Rice noodles thermoelectric material, and be prepared into a thermoelectric device, the growth tellurium and tellurides nano-wire array in the method on conductive base,
It is characterized in that include：
Prepare a conductive base；
Prepare the mixed solution comprising a tellurium predecessor and a reducing agent；
The conductive base is immersed in the mixed solution；And
The tellurium predecessor and the reducing agent is made to form multiple tellurium and tellurides nano wires in reaction on the conductive base.
2. growth tellurium according to claim 1 and tellurides nano-wire array exist in the method on conductive base, its feature
In the conductive base is rigidity or flexible.
3. growth tellurium according to claim 1 and tellurides nano-wire array exist in the method on conductive base, its feature
In the conductive base is threadiness, film-form, bulk, sheet, irregular, netted or vesicular texture.
4. growth tellurium according to claim 3 and tellurides nano-wire array exist in the method on conductive base, its feature
In the conductive base is netted or fibrous and comprising multiple criss-cross arrangements base material unit, the multiple tellurium and telluride
Thing nano wire surround and is formed at the surfaces of conductive substrates.
5. growth tellurium according to claim 1 and tellurides nano-wire array exist in the method on conductive base, its feature
There is strong reducing activity in, the conductive base, and the material of the conductive base include lithium, rubidium, potassium, caesium, barium, strontium, calcium, sodium, magnesium,
Aluminium, manganese, beryllium or carbon.
6. growth tellurium according to claim 1 and tellurides nano-wire array exist in the method on conductive base, its feature
In the multiple tellurium and tellurides nano-wire array is prepared on a large scale on the conductive base.
7. growth tellurium according to claim 1 and tellurides nano-wire array exist in the method on conductive base, its feature
In the multiple tellurium and tellurides nano-wire array is that reaction is formed at room temperature.
8. growth tellurium according to claim 1 and tellurides nano-wire array exist in the method on conductive base, its feature
In also including：
The each length and width of the tellurium and tellurides nano wire of the concentration rate and then modulation of the modulation tellurium predecessor and the reducing agent
Degree.
9. growth tellurium according to claim 1 and tellurides nano-wire array exist in the method on conductive base, its feature
In the material of the tellurium predecessor includes Te, TeO, TeO2、TeO3、Te2O5、H2TeO3、K2TeO3、Na2TeO3、H2TeO4、K2TeO4、
Na2TeO4、H2Te、NaHTe、(NH4)2Te、TeCl4、MezTe、〔Zn(TePh)2(tmeda)) (tmeda=N, N, N ', N '-
) or Ph teramethylethylenediamine2SbTeR (R=Et, Ph).
10. a kind of tellurium and tellurides nano wire thermoelectric device, it is characterised in that include：
One first electrode；
An at least tellurium and the tellurides nano-wire array being formed in the first electrode；And
The second electrode being formed on an at least tellurium and tellurides nano-wire array.
11. tellurium according to claim 10 and tellurides nano wire thermoelectric device, it is characterised in that the first electrode is one
Conductive base.
12. tellurium according to claim 11 and tellurides nano wire thermoelectric device, it is characterised in that include multiple telluriums and tellurium
Compound nano-wire array, the multiple tellurium and tellurides nano-wire array can be that p-type or n-type thermoelectric material and growing up is led in this
On electric base material, the multiple tellurium and tellurides array material includes bismuth telluride (Bismuth telluride), lead telluride (Lead
Telluride), silver telluride (Silver telluride), telluride mercury (Mercury telluride), cadmium telluride (Cadmium
Telluride), antimony telluride (Antimony telluride), telluride rubidium (Rubidium telluride), telluride manganese
(Manganese (II) telluride), zinc telluridse (Zinc telluride), telluride lithium (Lithium Telluride), tellurium
Change caesium (Cesium telluride), telluride potassium (Potassium Telluride), telluride sodium (Sodium telluride),
Hydrotelluric acid (Hydrogen telluride), arsenic telluride (Arsenic (III) telluride), telluride germanium (Germanium
Telluride), gold telluride (Gold telluride), telluride iron (Iron telluride), telluride palladium (Palladium
Telluride), telluride lanthanum (Lanthanum telluride), telluride tin (Tin telluride), telluride aluminium (Aluminum
Telluride), telluride europium (Europium telluride) or its alloy.
13. tellurium according to claim 10 and tellurides nano wire thermoelectric device, it is characterised in that include multiple sequentially heaps
Folded p-type tellurium and tellurides nano-wire array and it is multiple be connected with the multiple p-type tellurium and tellurides nano-wire array or
The n-type tellurium and tellurides nano-wire array of stacking.
14. tellurium according to claim 10 and tellurides nano wire thermoelectric device, it is characterised in that in the tellurium and tellurides
A conducting polymer is included between nano-wire array and the second electrode, the conducting polymer material includes polyaniline
(PANI)、polythiophene(PTH)、poly(3,4-ethylenedioxythiophene):poly
(styrenesulfonate)(PEDOT:PSS)、polyacetylene(PA)、polypyrrole(PPY)、
Polycarbazoles (PC) or polyphenylenevinylene (PPV).
15. tellurium according to claim 10 and tellurides nano wire thermoelectric device, it is characterised in that the second electrode material
The alloy formed comprising indium tin oxide, gold, silver, platinum, aluminium, nickel, copper, titanium, chromium, selenium or above-mentioned metal.
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