CN107608021B - Bismuth-doped all-solid-state band gap type microstructure optical fiber - Google Patents
Bismuth-doped all-solid-state band gap type microstructure optical fiber Download PDFInfo
- Publication number
- CN107608021B CN107608021B CN201710950826.8A CN201710950826A CN107608021B CN 107608021 B CN107608021 B CN 107608021B CN 201710950826 A CN201710950826 A CN 201710950826A CN 107608021 B CN107608021 B CN 107608021B
- Authority
- CN
- China
- Prior art keywords
- band gap
- optical fiber
- bismuth
- doped
- refractive index
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Lasers (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention discloses a bismuth-doped all-solid-state band gapThe type microstructure optical fiber comprises a substrate, a fiber core and a cladding medium column array; the substrate material is quartz glass doped with a certain amount of germanium dioxide, and the refractive index of the quartz glass is n1(ii) a The fiber core is quartz glass doped with bismuth and germanium dioxide, the refractive index of the quartz glass is ensured to be the same as that of the substrate material by adjusting the doping proportion of the bismuth and the germanium dioxide, and the refractive index is also n1(ii) a Having a diameter d1(ii) a The cladding dielectric column array is formed by m layers of cylindrical dielectric column arrays which surround the fiber core and are arranged in a regular hexagon, m is more than or equal to 5 and less than or equal to 7, and the refractive indexes of the dielectric columns are n2And n is2>n1(ii) a The diameters of the medium columns are all d2(ii) a The distance between two dielectric columns in the cladding dielectric column array is inverted V; the optical fiber is a band gap type microstructure optical fiber, the pump light and the fluorescence are respectively positioned in the centers of two different band gaps, and the Raman scattering light is positioned at the edge of the band gap. The invention can effectively filter the Raman scattering light of the pump, thereby achieving the purpose of inhibiting the Raman effect of the pump light and being used for the bismuth-doped fiber laser.
Description
Technical Field
The invention belongs to the technical field of optical fiber manufacturing, relates to the structural design of a doped gain optical fiber for an optical fiber laser, and particularly relates to a bismuth-doped all-solid-state band gap type microstructure optical fiber.
Background
A fiber laser is a very important laser, and most commonly, a fiber laser is manufactured by using a gain fiber doped with a rare earth element. The rare earth elements commonly used for doping the gain fiber comprise five rare earth elements of neodymium (Nd), ytterbium (Yb), praseodymium (Pr), thulium (Tm) and erbium (Er), wherein the five rare earth elements have respective specific light-emitting wave bands, but cannot generate laser with the wavelength near 1460 nm (1389-1538 nm). In order to fill the gap that the wave band near 1460 nm can not generate laser, a gain fiber doped with bismuth as a main group element and a corresponding bismuth-doped fiber laser are provided.
The uniformity of bismuth ion concentration in the bismuth-doped fiber directly determines the performance of the bismuth-doped fiber laser, but the boiling point of bismuth is far lower than the rod-shrinking temperature of the preform rod and the drawing temperature of the fiber, so the bismuth ion concentration in the bismuth-doped fiber laser system is low, and the absorption efficiency of the bismuth-doped fiber to pump light is low. In order to obtain laser output with the same power, the length of the bismuth-doped gain fiber is tens of times that of the rare earth element-doped gain fiber. The ytterbium-doped fiber laser built by Younchan Jeong et al outputs kilowatt-level continuous waves near the wavelength of 1.1 micron, the used fiber length is less than 10 meters, the laser slope is more than 80% [ Lasers and Electro-optics. IEEE,2004:2pp.vol.1], while the bismuth-doped fiber laser built by S.V.Firsttov et al and having the output power of 20W uses the bismuth-doped fiber, the concentration of bismuth element is only 0.02%, the fiber length reaches 93 meters, and the laser efficiency is 50% [ Quantum Electron,2011,41(7),581 ]. The existing bismuth-doped gain fiber, either a step type bismuth-doped fiber or a bismuth-doped microstructure fiber, belongs to a total internal reflection type in the aspect of a light guiding mechanism, light of each waveband can be conducted through a fiber fundamental mode, and the conducted light waveband is not selective. Because The length of The Optical fiber is long, The absorption efficiency of The pump light is low and The wavelength of The transmitted light is not selective, in The bismuth-doped fiber laser system, The pump light can generate red-shifted Raman scattering light due to The action of stimulated Raman when being transmitted in The bismuth-doped fiber, and The output efficiency of The bismuth-doped fiber laser with The output wavelength near 1360 nm built by N.K. Thippappappapu and The like is only 11% [ The Workshop on Specialty Optical Fibers & Theirapplications,2015 ].
Disclosure of Invention
Aiming at the defects in the prior art, the invention provides the bismuth-doped band gap type microstructure optical fiber which can effectively filter Raman scattering light of a pump so as to achieve the aim of inhibiting the Raman effect of pump light, and the optical fiber can be used for a bismuth-doped optical fiber laser.
In order to solve the technical problems, the invention is realized by the following technical scheme:
bismuth-doped all-solid-state band gap type microstructureThe optical fiber comprises a substrate, a fiber core and a cladding medium column array; the substrate material is quartz glass doped with a certain amount of germanium dioxide, and the refractive index of the quartz glass is n1(ii) a The fiber core is quartz glass doped with bismuth and germanium dioxide, the refractive index of the quartz glass is ensured to be the same as that of the substrate material by adjusting the doping proportion of the bismuth and the germanium dioxide, and the refractive index is also n1(ii) a Having a diameter d1(ii) a The cladding dielectric column array is composed of m layers of cylindrical dielectric column arrays which surround the fiber core and are arranged in a regular hexagon, m is more than or equal to 5 and less than or equal to 7, and the refractive indexes of the dielectric columns are n2And n is2>n1(ii) a The diameters of the medium columns are all d2(ii) a The column spacing is inverted V, and the column spacing is the distance between the centers of any two adjacent dielectric columns in the cladding dielectric column array; the optical fiber is a band gap type microstructure optical fiber, the pump light and the fluorescence are respectively positioned in the centers of two different band gaps, and the Raman scattering light is positioned at the edge of the band gap.
Further, the refractive index n of the substrate and the core1The range of (1) is 1.452 to 1.455.
Further, the core diameter d1In the range of 13 to 14 μm.
Further, the refractive index n of the high-refractive-index column of the clad dielectric column2In the range of 0.045. ltoreq.n2-n1≤0.053。
Further, the diameter d of the clad dielectric column2In the range of 6.060-6.180 μm.
Furthermore, the range of the column pitch Lambda is 10.1-10.3 micrometers.
Compared with the prior art, the invention has the following beneficial effects:
the invention relates to a bismuth-doped fully-solid band gap type microstructure optical fiber, which has two band gaps in a designed wave band, and the width and the position of the band gaps are adjusted by adjusting the structural parameters of the optical fiber, so that pump light of 1340 nanometers and laser of 1460 nanometers are respectively positioned at the central positions of different band gaps, and the low-loss transmission and the laser generation of the optical fiber are ensured. On the basis, the wavelength of Raman scattering light corresponding to the pump light is placed at the edge position of the band gap, so that the loss of the Raman scattering light is increased, the Raman effect of the pump light is inhibited, and the performance of the bismuth-doped fiber laser is enhanced. The invention can effectively filter the Raman scattering light of the pump, thereby achieving the purpose of inhibiting the Raman effect of the pump light and being used for the bismuth-doped fiber laser.
Drawings
FIG. 1 is a schematic cross-sectional view of an optical fiber structure of example 1 of the present invention.
Fig. 2 is a graph of the band gap, mode effective refractive index, and mode field of example 1 of the present invention.
Fig. 3 is a loss map of embodiment 1 of the present invention.
FIG. 4 is a schematic cross-sectional view of the optical fiber structure of example 2 of the present invention.
In the figure: 1-substrate, 2-cladding dielectric column, 3-fiber core, 4-column spacing, 5-pumping light region and 6-fiber laser region.
Detailed Description
The invention is described in further detail below with reference to the following detailed description and accompanying drawings:
the principle of the invention is explained below with reference to fig. 1. FIG. 1 shows a schematic cross-sectional view of an optical fiber structure of example 1 of the present invention. The fiber core 3 is a bismuth-doped region for generating laser light under the action of the pump light. The cladding dielectric pillars 2 are an array of five layers of regular hexagons arranged on the substrate 1 around the fiber core, and the refractive index of the cladding dielectric pillars 2 is higher than that of the substrate 1, so that the band-gap type light guide microstructure fiber is formed. By adjusting the diameter and the refractive index of the cladding dielectric column 2, the width and the position of the band gap can be adjusted, so that the pump light and the laser light are respectively positioned at the centers of different band gaps, the Raman scattering light is positioned at the edge of the band gap, and the loss of the Raman scattering light is increased.
The band gap of the band gap fiber is calculated by adopting a plane wave expansion method, the mode effective refractive index of the fiber is calculated by adopting a multipole method, and the band gap and mode refractive index curve graphs of the fiber are obtained, and meanwhile, a mode field graph at 1460 nm is also obtained, as shown in figure 2. In the figure, the band gap at short wavelength is used for guiding the pump light, the band gap at long wavelength is used for guiding the laser light, and the Raman scattering light of the pump light is positioned at the edge of the band gap at long wavelength, so that the loss of the laser light is lower than that of the Raman scattering light of the pump light. Meanwhile, the loss graph of the optical fiber in the wave band of 1.0-1.7 microns is obtained through calculation, and is shown in figure 3.
The first embodiment is as follows:
in the schematic diagram of the bismuth-doped all-solid-state bandgap-type microstructure optical fiber shown in fig. 1, the substrate 1 is germanium-doped pure silica glass with a refractive index of 1.452; the fiber core 3 ensures that the refractive index of the fiber core is 1.452 which is the same as that of the substrate 1 by doping two elements of bismuth and germanium in pure quartz glass; the diameter of the fiber core 3 of the optical fiber is 14 microns; the column spacing 4 is 10.3 microns, and the diameter of the medium column 2 in the optical fiber cladding is 6.180 microns; the refractive index of the optical fiber cladding medium column 2 is 1.5; the number of fiber cladding layers was 5. The loss of the fiber at 1460 nm was 0.038 dB/m.
Example two:
in the bismuth-doped all-solid-state bandgap microstructure optical fiber shown in fig. 4, a substrate 1 is made of germanium-doped pure quartz glass, and the refractive index is 1.455; the fiber core 3 is doped with two elements of bismuth and germanium, and the refractive index is 1.455; the diameter of the fiber core 3 is 13 microns; the column spacing 4 was 10.1 microns; the diameter of the medium column 2 in the optical fiber cladding is 6.06 micrometers; the refractive index of the medium column 2 in the optical fiber cladding is 1.50; the number of fiber cladding layers was 6. The fiber had a loss at 1460 nm of 0.026 dB/m.
The drawings described above are merely schematic illustrations and do not limit the scope of the invention. It will be understood that these examples are intended to illustrate the invention and are not intended to limit the scope of the invention in any way.
Claims (1)
1. The bismuth-doped all-solid-state band gap type microstructure optical fiber is characterized by comprising a substrate, a fiber core and a cladding medium column array; the substrate material is quartz glass doped with a certain amount of germanium dioxide in the bismuth-doped all-solid-state band gap type microstructure optical fiber, the refractive index of the quartz glass is n1, the fiber core is quartz glass doped with bismuth and germanium dioxide together, and the refractive index is ensured to be the same as that of the substrate material by adjusting the doping proportion of the two elements and is also n 1; its diameter is d 1; the cladding dielectric column array is formed by m layers of cylindrical dielectric column arrays which surround the fiber core and are arranged according to a regular hexagon, m is more than or equal to 5 and less than or equal to 7, the refractive indexes of the dielectric columns are n2, n2 is more than n1, the diameters of the dielectric columns are d2, the column spacing is inverted V, the column spacing inverted V is the spacing between the centers of any two adjacent dielectric columns in the cladding dielectric column array, the optical fiber is a band gap type structural optical fiber, the pump light and the fluorescence are respectively located at the centers of two different band gaps, and the Raman scattering light is located at the edge of the band gap;
the range of the refractive index n1 of the substrate and the fiber core is 1.452-1.455;
the range of the fiber core diameter d1 is 13-14 microns;
the range of the refractive index n2 of the high-refractive-index column of the clad medium column is more than or equal to 0.045 and less than or equal to n2-n1 and less than or equal to 0.053;
the diameter d2 of the clad medium column ranges from 6.060 microns to 6.180 microns;
the range of the column spacing inverted V is 10.1-10.3 micrometers;
the fiber core (3) is a bismuth-doped region and is used for generating laser under the action of pump light, the cladding dielectric columns are a dielectric column array which surrounds the fiber core on the substrate and is arranged in a five-layer regular hexagon mode, and the cladding dielectric columns (2) are higher than the refractive index of the substrate (1), so that a band gap type light guide microstructure optical fiber is formed, the width and the position of a band gap can be adjusted by adjusting the diameter size and the refractive index of the cladding dielectric columns (2), the pump light and the laser are located in different band gap centers, Raman scattering light is located at the edge of the band gap, and the loss of the Raman scattering light is increased;
calculating the band gap of the band gap optical fiber by adopting a plane wave expansion method, calculating the mode effective refractive index of the optical fiber by adopting a multipole method, obtaining a band gap and mode refractive index curve diagram of the optical fiber, and simultaneously obtaining a mode field diagram at 1460 nanometers, wherein the band gap at the short wave is used for conducting pump light, the band gap at the long wave is used for conducting laser, and Raman scattering light of the pump light is positioned at the edge of the band gap at the long wave, so that the loss of the laser is lower than that of the Raman scattering light of the pump light; meanwhile, the loss graph of the optical fiber in the 1.0-1.7 micron wave band is obtained through calculation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710950826.8A CN107608021B (en) | 2017-10-13 | 2017-10-13 | Bismuth-doped all-solid-state band gap type microstructure optical fiber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710950826.8A CN107608021B (en) | 2017-10-13 | 2017-10-13 | Bismuth-doped all-solid-state band gap type microstructure optical fiber |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107608021A CN107608021A (en) | 2018-01-19 |
| CN107608021B true CN107608021B (en) | 2020-05-12 |
Family
ID=61076975
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710950826.8A Active CN107608021B (en) | 2017-10-13 | 2017-10-13 | Bismuth-doped all-solid-state band gap type microstructure optical fiber |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107608021B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112723751B (en) * | 2020-10-23 | 2022-03-11 | 南京同溧晶体材料研究院有限公司 | Rare earth doped bismuth germanate single crystal optical fiber and cladding method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1883085A (en) * | 2003-11-19 | 2006-12-20 | 康宁股份有限公司 | Active photonic band-gap optical fiber |
| CN103038682A (en) * | 2010-09-28 | 2013-04-10 | 株式会社藤仓 | Solid photonic band gap fiber, and fiber module, fiber amp, and fiber laser employing solid photonic band gap fiber |
| CN103645536A (en) * | 2013-12-18 | 2014-03-19 | 江苏大学 | All-solid LMA (large mode area) photonic band gap optical fiber |
| CN103880279A (en) * | 2014-02-26 | 2014-06-25 | 中国科学院上海光学精密机械研究所 | Method for preparing all solid-state band gap-type photonic crystal fiber of multi-component glass |
| CN105009387A (en) * | 2013-03-14 | 2015-10-28 | 株式会社藤仓 | Photonic bandgap fiber and fiber laser device using same |
-
2017
- 2017-10-13 CN CN201710950826.8A patent/CN107608021B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1883085A (en) * | 2003-11-19 | 2006-12-20 | 康宁股份有限公司 | Active photonic band-gap optical fiber |
| CN103038682A (en) * | 2010-09-28 | 2013-04-10 | 株式会社藤仓 | Solid photonic band gap fiber, and fiber module, fiber amp, and fiber laser employing solid photonic band gap fiber |
| CN105009387A (en) * | 2013-03-14 | 2015-10-28 | 株式会社藤仓 | Photonic bandgap fiber and fiber laser device using same |
| CN103645536A (en) * | 2013-12-18 | 2014-03-19 | 江苏大学 | All-solid LMA (large mode area) photonic band gap optical fiber |
| CN103880279A (en) * | 2014-02-26 | 2014-06-25 | 中国科学院上海光学精密机械研究所 | Method for preparing all solid-state band gap-type photonic crystal fiber of multi-component glass |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107608021A (en) | 2018-01-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10197727B2 (en) | Large core holey fibers | |
| CN109031516B (en) | Large-mode-field double-cladding ytterbium-doped optical fiber | |
| CN101884146B (en) | Active optical fiber and method for fabricating an active optical fiber | |
| EP3025175B1 (en) | Single large mode cladding amplification in active double-clad fibers | |
| JP2002359420A (en) | Double-clad photonic optical fiber | |
| CN102967981A (en) | Super-continuous spectrum light source based on multicore photonic crystal fiber | |
| CN1844962A (en) | Microstructured optical fiber with long wave cut-off function and preparation thereof | |
| CN100587528C (en) | Gain photon crystal fiber waveguide and its device | |
| CN2938146Y (en) | Photon crystal optical fibre with refractity depression layer | |
| EP2228673A1 (en) | Photonic bandgap fiber | |
| WO2021135394A1 (en) | Single-mode optical fiber having large fiber core diameter | |
| CN1243259C (en) | Rare-earth doped photon crystal optical fiber | |
| CN104237999A (en) | Broadband terahertz wave polarization-maintaining transmission optical fiber | |
| CN107608021B (en) | Bismuth-doped all-solid-state band gap type microstructure optical fiber | |
| CN101285910A (en) | Preparation method for multi- core optical fibre embodying light sensitive single core | |
| CN103439763A (en) | Total solid optical fiber with large-mode field area and manufacturing method thereof | |
| CN102819062B (en) | Air hole square array fiber core annular doping four-core photonic crystal fiber | |
| CN101620295A (en) | Large mode area multi-core fiber | |
| CN108828711B (en) | Ytterbium-doped optical fiber | |
| CN113497404B (en) | Rare earth-doped hollow anti-resonance optical fiber and preparation method thereof | |
| CN113589425B (en) | Multi-core microstructure optical fiber | |
| JP6055462B2 (en) | Triple sheath single mode optical fiber | |
| CN112346171A (en) | Bendable all-solid-state single-polarization photonic band gap fiber with core diameter of more than 45 micrometers | |
| CN107367788A (en) | A kind of large mode field improved multilayer groove optical fiber | |
| CN114035263B (en) | Photonic band gap optical fiber of Lailo triangle low refractive index rod |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20201231 Address after: Room 801, 85 Kefeng Road, Huangpu District, Guangzhou City, Guangdong Province Patentee after: Yami Technology (Guangzhou) Co., Ltd Address before: 066004 No. 438 west section of Hebei Avenue, seaport District, Hebei, Qinhuangdao Patentee before: Yanshan University |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20210607 Address after: 518000 18th floor, building B, tefa information port building, No.2 Kefeng Road, high tech Zone, Nanshan District, Shenzhen City, Guangdong Province Patentee after: SHENZHEN SDG INFORMATION Co.,Ltd. Address before: Room 801, 85 Kefeng Road, Huangpu District, Guangzhou City, Guangdong Province Patentee before: Yami Technology (Guangzhou) Co., Ltd |
|
| TR01 | Transfer of patent right |