CN107603693A - A kind of semiconductor crystal wafer cutting liquid - Google Patents
A kind of semiconductor crystal wafer cutting liquid Download PDFInfo
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- CN107603693A CN107603693A CN201710878967.3A CN201710878967A CN107603693A CN 107603693 A CN107603693 A CN 107603693A CN 201710878967 A CN201710878967 A CN 201710878967A CN 107603693 A CN107603693 A CN 107603693A
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- semiconductor crystal
- crystal wafer
- cutting liquid
- wafer cutting
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Abstract
The invention discloses a kind of semiconductor crystal wafer cutting liquid, and it is made up of the raw material of following parts by weight：65 90 parts of polyethylene glycol, 15 18 parts of chelating agent, 11 14 parts of dispersant, 30 35 parts of bleeding agent, 14 22 parts of surfactant.Compared with prior art, cutting liquid energy of the invention effectively reduces surface tension, reduces frictional force, and cutting sheet is thin, and yield rate is substantially better than other cutting lubrication products；The cutting liquid of the present invention has cooling and lubrication well in addition, reduces the surface damage of semiconductor crystal wafer, mechanical stress, is advantageous to the cleaning of semiconductor crystal wafer subsequent handling, can effectively improve the thickness error of semiconductor crystal wafer, improves cutting yield.
Description
Technical field
The present invention relates to semiconductor crystal wafer technical field, and in particular to a kind of semiconductor crystal wafer cutting liquid.
Background technology
In semiconductor crystal wafer cutting process, due to the effect of strong mechanical force, semiconductor crystal wafer edge easily occur fine fisssure,
Chipping and stress concentration point, for semiconductor wafer surface there is also stress distribution inequality and damage, these defects are to cause semiconductor
The secondary defects such as a large amount of skid wires, extension fault, slip dislocation, microdefect and semiconductor crystal wafer, core are produced in wafer manufacture
An important factor for piece is easily rupturable.The problem of damage present in semiconductor crystal wafer and stress, has become microelectronics industry and continues to send out
The obstacle of exhibition, rocking, improving its stability for scroll saw is overcome in wire cutting technology, to reducing silicon chip surface damage, particularly table
The defects of face is rougher plays an important roll, but selects the wire cutting liquid of function admirable even more to reduce or avoid the weight of above mentioned problem
Want approach.
The content of the invention
The present invention is intended to provide a kind of semiconductor crystal wafer cutting liquid.
The present invention provides following technical scheme：
A kind of semiconductor crystal wafer cutting liquid, it is made up of the raw material of following parts by weight：Polyethylene glycol 65-90 parts, chela
Mixture 15-18 parts, dispersant 11-14 parts, bleeding agent 30-35 parts, surfactant 14-22 parts.
The molecular weight polyethylene glycol 20000-100000.
The chelating agent is made up of hydroquinones, sodium tripolyphosphate and aminotrimethylene phosphoric acid.
The dispersant is by acrylic acid, ethylacrylic acid, maleic anhydride, acrylamido sulfonic acid with 1：1：3：2 weight
Than composition.
The bleeding agent is the secondary alkyl alcohol ether of polyoxyethylene (JFC).
The surfactant is chlorination stearalkonium, tetraethyl ammonium hydroxide, TBAH.
Compared with prior art, the beneficial effects of the invention are as follows：The cutting liquid energy of the present invention effectively reduces surface tension, subtracted
Few frictional force, cutting sheet is thin, and yield rate is substantially better than other cutting lubrication products；The cutting liquid of the present invention has good in addition
Cooling and lubrication, reduce the surface damage of semiconductor crystal wafer, mechanical stress, it is clear to be advantageous to semiconductor crystal wafer subsequent handling
Wash, can effectively improve the thickness error of semiconductor crystal wafer, improve cutting yield.
Embodiment
Below in conjunction with the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described,
Obviously, described embodiment is only part of the embodiment of the present invention, rather than whole embodiments.Based in the present invention
Embodiment, the every other embodiment that those of ordinary skill in the art are obtained under the premise of creative work is not made, all
Belong to the scope of protection of the invention.
A kind of semiconductor crystal wafer cutting liquid of embodiment 1, it is made up of the raw material of following parts by weight：Polyethylene glycol 65
Part, 15 parts of chelating agent, 11 parts of dispersant, 30 parts of bleeding agent, 14 parts of surfactant.
The molecular weight polyethylene glycol 20000-100000.
The chelating agent is made up of hydroquinones, sodium tripolyphosphate and aminotrimethylene phosphoric acid.
The dispersant is by acrylic acid, ethylacrylic acid, maleic anhydride, acrylamido sulfonic acid with 1：1：3：2 weight
Than composition.
The bleeding agent is the secondary alkyl alcohol ether of polyoxyethylene (JFC).
The surfactant is chlorination stearalkonium, tetraethyl ammonium hydroxide, TBAH.
A kind of semiconductor crystal wafer cutting liquid of embodiment 2, it is made up of the raw material of following parts by weight：Polyethylene glycol 90
Part, 18 parts of chelating agent, 14 parts of dispersant, 35 parts of bleeding agent, 22 parts of surfactant.
The molecular weight polyethylene glycol 20000-100000.
The chelating agent is made up of hydroquinones, sodium tripolyphosphate and aminotrimethylene phosphoric acid.
The dispersant is by acrylic acid, ethylacrylic acid, maleic anhydride, acrylamido sulfonic acid with 1：1：3：2 weight
Than composition.
The bleeding agent is the secondary alkyl alcohol ether of polyoxyethylene (JFC).
The surfactant is chlorination stearalkonium, tetraethyl ammonium hydroxide, TBAH.
A kind of semiconductor crystal wafer cutting liquid of embodiment 3, it is made up of the raw material of following parts by weight：Polyethylene glycol 82
Part, 17 parts of chelating agent, 12 parts of dispersant, 33 parts of bleeding agent, 18 parts of surfactant.
The molecular weight polyethylene glycol 20000-100000.
The chelating agent is made up of hydroquinones, sodium tripolyphosphate and aminotrimethylene phosphoric acid.
The dispersant is by acrylic acid, ethylacrylic acid, maleic anhydride, acrylamido sulfonic acid with 1：1：3：2 weight
Than composition.
The bleeding agent is the secondary alkyl alcohol ether of polyoxyethylene (JFC).
The surfactant is chlorination stearalkonium, tetraethyl ammonium hydroxide, TBAH.
It is obvious to a person skilled in the art that the invention is not restricted to the details of the one exemplary embodiment, Er Qie
In the case of without departing substantially from spirit or essential attributes of the invention, the present invention can be realized in other specific forms.Therefore, no matter
From the point of view of which point, embodiment all should be regarded as exemplary, and be nonrestrictive, the scope of the present invention is by appended power
Profit requires rather than the explanation limits, it is intended that all in the implication and scope of the equivalency of claim by falling
Change is included in the present invention.Moreover, it will be appreciated that although the present specification is described in terms of embodiments, not each
Embodiment only includes an independent technical scheme, and this narrating mode of specification is only this area for clarity
Technical staff should be using specification as an entirety, and the technical solutions in the various embodiments may also be suitably combined, forms this
The other embodiment that art personnel are appreciated that.
Claims (6)
1. a kind of semiconductor crystal wafer cutting liquid, it is characterised in that it is made up of the raw material of following parts by weight：Polyethylene glycol
65-90 parts, chelating agent 15-18 parts, dispersant 11-14 parts, bleeding agent 30-35 parts, surfactant 14-22 parts.
A kind of 2. semiconductor crystal wafer cutting liquid according to claim 1, it is characterised in that：The molecular weight polyethylene glycol
20000-100000。
A kind of 3. semiconductor crystal wafer cutting liquid according to claim 1, it is characterised in that：The chelating agent is by benzene two
Phenol, sodium tripolyphosphate and aminotrimethylene phosphoric acid composition.
A kind of 4. semiconductor crystal wafer cutting liquid according to claim 1, it is characterised in that：The dispersant by acrylic acid,
Ethylacrylic acid, maleic anhydride, acrylamido sulfonic acid are with 1：1：3：2 weight is than composition.
A kind of 5. semiconductor crystal wafer cutting liquid according to claim 1, it is characterised in that：The bleeding agent is polyoxyethylene
Secondary alkyl alcohol ether (JFC).
A kind of 6. semiconductor crystal wafer cutting liquid according to claim 1, it is characterised in that：The surfactant is chlorination
Stearalkonium, tetraethyl ammonium hydroxide, TBAH.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710878967.3A CN107603693A (en) | 2017-09-26 | 2017-09-26 | A kind of semiconductor crystal wafer cutting liquid |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710878967.3A CN107603693A (en) | 2017-09-26 | 2017-09-26 | A kind of semiconductor crystal wafer cutting liquid |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107603693A true CN107603693A (en) | 2018-01-19 |
Family
ID=61058329
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710878967.3A Pending CN107603693A (en) | 2017-09-26 | 2017-09-26 | A kind of semiconductor crystal wafer cutting liquid |
Country Status (1)
| Country | Link |
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| CN (1) | CN107603693A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115786023A (en) * | 2023-02-06 | 2023-03-14 | 广州市蔚森节能科技有限公司 | Neodymium iron boron permanent magnet processing liquid and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003042340A1 (en) * | 2001-11-14 | 2003-05-22 | Ppt Research, Inc. | A cutting and lubricating composition for use with a wire cutting apparatus |
| CN102093925A (en) * | 2009-12-11 | 2011-06-15 | 安集微电子（上海）有限公司 | Solar silicon wafer cutting liquid |
| CN103695149A (en) * | 2013-12-30 | 2014-04-02 | 镇江市港南电子有限公司 | Silicon wafer cutting solution |
| CN104419507A (en) * | 2013-08-29 | 2015-03-18 | 章成荣 | Semiconductor cutting fluid |
| CN105385489A (en) * | 2015-11-17 | 2016-03-09 | 江苏金晖光伏有限公司 | Silicon wafer cutting fluid |
-
2017
- 2017-09-26 CN CN201710878967.3A patent/CN107603693A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003042340A1 (en) * | 2001-11-14 | 2003-05-22 | Ppt Research, Inc. | A cutting and lubricating composition for use with a wire cutting apparatus |
| CN102093925A (en) * | 2009-12-11 | 2011-06-15 | 安集微电子（上海）有限公司 | Solar silicon wafer cutting liquid |
| CN104419507A (en) * | 2013-08-29 | 2015-03-18 | 章成荣 | Semiconductor cutting fluid |
| CN103695149A (en) * | 2013-12-30 | 2014-04-02 | 镇江市港南电子有限公司 | Silicon wafer cutting solution |
| CN105385489A (en) * | 2015-11-17 | 2016-03-09 | 江苏金晖光伏有限公司 | Silicon wafer cutting fluid |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115786023A (en) * | 2023-02-06 | 2023-03-14 | 广州市蔚森节能科技有限公司 | Neodymium iron boron permanent magnet processing liquid and preparation method thereof |
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| PB01 | Publication | ||
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| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180119 |