CN107592825B - 用于反应器系统的夹紧装置 - Google Patents
用于反应器系统的夹紧装置 Download PDFInfo
- Publication number
- CN107592825B CN107592825B CN201680027097.2A CN201680027097A CN107592825B CN 107592825 B CN107592825 B CN 107592825B CN 201680027097 A CN201680027097 A CN 201680027097A CN 107592825 B CN107592825 B CN 107592825B
- Authority
- CN
- China
- Prior art keywords
- reactor system
- reactor
- housing
- seal plate
- set forth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000006243 chemical reaction Methods 0.000 claims abstract description 59
- 238000007789 sealing Methods 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims description 14
- 239000012530 fluid Substances 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 239000002210 silicon-based material Substances 0.000 claims description 6
- 239000007795 chemical reaction product Substances 0.000 claims description 5
- 239000011856 silicon-based particle Substances 0.000 claims description 5
- 230000008602 contraction Effects 0.000 claims description 2
- 239000002245 particle Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 2
- 239000005052 trichlorosilane Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000002706 hydrostatic effect Effects 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/03—Pressure vessels, or vacuum vessels, having closure members or seals specially adapted therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/04—Pressure vessels, e.g. autoclaves
- B01J3/042—Pressure vessels, e.g. autoclaves in the form of a tube
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/442—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using fluidised bed process
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Devices And Processes Conducted In The Presence Of Fluids And Solid Particles (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Abstract
Description
Claims (34)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/709,856 US10837106B2 (en) | 2015-05-12 | 2015-05-12 | Clamping assembly for a reactor system |
US14/709,856 | 2015-05-12 | ||
PCT/US2016/032071 WO2016183308A1 (en) | 2015-05-12 | 2016-05-12 | Clamping assembly for a reactor system |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107592825A CN107592825A (zh) | 2018-01-16 |
CN107592825B true CN107592825B (zh) | 2021-03-26 |
Family
ID=56411873
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201680027097.2A Active CN107592825B (zh) | 2015-05-12 | 2016-05-12 | 用于反应器系统的夹紧装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10837106B2 (zh) |
CN (1) | CN107592825B (zh) |
SA (1) | SA517390317B1 (zh) |
WO (1) | WO2016183308A1 (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017100564A1 (en) * | 2015-12-11 | 2017-06-15 | Sunedison, Inc. | Reactor systems having multiple pressure balancers |
WO2017100404A1 (en) * | 2015-12-11 | 2017-06-15 | Sunedison, Inc. | Reactor systems having external pressure balancer |
JP6952463B2 (ja) | 2016-12-20 | 2021-10-20 | キヤノン株式会社 | 情報処理装置、その制御方法、及びプログラム |
US20220298671A1 (en) * | 2021-03-18 | 2022-09-22 | Linton Crystal Technologies Corp. | Crystal growing assembly with combination lift arm and winch |
Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3138483A (en) * | 1960-01-11 | 1964-06-23 | Polymer Processes Inc | Apparatus for coating interior of hollow body |
GB2078901A (en) * | 1980-06-30 | 1982-01-13 | Chern Developments Proprietary | Pressure vessel |
US4957572A (en) * | 1988-06-17 | 1990-09-18 | Saint-Gobain Vitrage | Method and apparatus for the production of a bead of organic material intended to serve as a seal and insert in a multiple glazing |
US5013015A (en) * | 1990-06-11 | 1991-05-07 | General Dynamics Corporation | Mechanically actuated swing clamp |
US5088444A (en) * | 1989-03-15 | 1992-02-18 | Kabushiki Kaisha Toshiba | Vapor deposition system |
US5092963A (en) * | 1989-02-21 | 1992-03-03 | Atlantic Richfield Company | Automated top head and stem guide assembly for coking drums |
GB2304799B (en) * | 1995-08-30 | 1999-08-18 | Smiths Industries Plc | Pressure vessels |
CN1730991A (zh) * | 2005-08-02 | 2006-02-08 | 中国海洋大学 | 高压容器 |
CN2818931Y (zh) * | 2005-08-02 | 2006-09-20 | 中国海洋大学 | 高压容器 |
US20090217871A1 (en) * | 2008-02-28 | 2009-09-03 | Asm Genitech Korea Ltd. | Thin film deposition apparatus and method of maintaining the same |
US20100055316A1 (en) * | 2008-09-04 | 2010-03-04 | Tokyo Electron Limited | Film deposition apparatus, substrate processing apparatus, film deposition method, and storage medium |
US20110054661A1 (en) * | 2009-09-01 | 2011-03-03 | Rasnick John W | Direct drive arrangement to control confinement rings positioning and methods thereof |
US20110056457A1 (en) * | 2008-05-12 | 2011-03-10 | Turbulent Energy, Inc. | System and apparatus for condensation of liquid from gas and method of collection of liquid |
CN202867819U (zh) * | 2012-08-17 | 2013-04-10 | 常州市万象化工机械有限公司 | 整体嵌入半环连接的快开门装置用滑移开合机构 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100756310B1 (ko) | 2006-02-07 | 2007-09-07 | 한국화학연구원 | 입자형 다결정실리콘 제조용 고압 유동층반응기 |
US20120100059A1 (en) | 2010-10-22 | 2012-04-26 | Memc Electronic Materials, Inc. | Production of Polycrystalline Silicon By The Thermal Decomposition of Trichlorosilane In A Fluidized Bed Reactor |
US9156705B2 (en) | 2010-12-23 | 2015-10-13 | Sunedison, Inc. | Production of polycrystalline silicon by the thermal decomposition of dichlorosilane in a fluidized bed reactor |
NO20231208A1 (no) | 2011-09-30 | 2014-04-23 | Corner Star Ltd | Produksjon av polykrystallinsk silisium ved termisk nedbrytning av silan i en hvirvelsjiktreaktor |
CN103842069B (zh) | 2011-09-30 | 2016-10-05 | Memc电子材料有限公司 | 通过使硅烷在流化床反应器中热分解而制备多晶硅 |
-
2015
- 2015-05-12 US US14/709,856 patent/US10837106B2/en active Active
-
2016
- 2016-05-12 CN CN201680027097.2A patent/CN107592825B/zh active Active
- 2016-05-12 WO PCT/US2016/032071 patent/WO2016183308A1/en active Application Filing
-
2017
- 2017-11-12 SA SA517390317A patent/SA517390317B1/ar unknown
Patent Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3138483A (en) * | 1960-01-11 | 1964-06-23 | Polymer Processes Inc | Apparatus for coating interior of hollow body |
GB2078901A (en) * | 1980-06-30 | 1982-01-13 | Chern Developments Proprietary | Pressure vessel |
US4957572A (en) * | 1988-06-17 | 1990-09-18 | Saint-Gobain Vitrage | Method and apparatus for the production of a bead of organic material intended to serve as a seal and insert in a multiple glazing |
US5092963A (en) * | 1989-02-21 | 1992-03-03 | Atlantic Richfield Company | Automated top head and stem guide assembly for coking drums |
US5088444A (en) * | 1989-03-15 | 1992-02-18 | Kabushiki Kaisha Toshiba | Vapor deposition system |
US5013015A (en) * | 1990-06-11 | 1991-05-07 | General Dynamics Corporation | Mechanically actuated swing clamp |
GB2304799B (en) * | 1995-08-30 | 1999-08-18 | Smiths Industries Plc | Pressure vessels |
CN1730991A (zh) * | 2005-08-02 | 2006-02-08 | 中国海洋大学 | 高压容器 |
CN2818931Y (zh) * | 2005-08-02 | 2006-09-20 | 中国海洋大学 | 高压容器 |
US20090217871A1 (en) * | 2008-02-28 | 2009-09-03 | Asm Genitech Korea Ltd. | Thin film deposition apparatus and method of maintaining the same |
US20110056457A1 (en) * | 2008-05-12 | 2011-03-10 | Turbulent Energy, Inc. | System and apparatus for condensation of liquid from gas and method of collection of liquid |
US20100055316A1 (en) * | 2008-09-04 | 2010-03-04 | Tokyo Electron Limited | Film deposition apparatus, substrate processing apparatus, film deposition method, and storage medium |
US20110054661A1 (en) * | 2009-09-01 | 2011-03-03 | Rasnick John W | Direct drive arrangement to control confinement rings positioning and methods thereof |
CN202867819U (zh) * | 2012-08-17 | 2013-04-10 | 常州市万象化工机械有限公司 | 整体嵌入半环连接的快开门装置用滑移开合机构 |
Also Published As
Publication number | Publication date |
---|---|
US20160333474A1 (en) | 2016-11-17 |
US10837106B2 (en) | 2020-11-17 |
CN107592825A (zh) | 2018-01-16 |
WO2016183308A1 (en) | 2016-11-17 |
SA517390317B1 (ar) | 2021-03-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN107592825B (zh) | 用于反应器系统的夹紧装置 | |
US10145021B2 (en) | Apparatus for processing materials at high temperatures and pressures | |
US11378202B2 (en) | Vacuum valve having a pressure sensor | |
CA2798808C (en) | Thermocouple | |
EP2191249B1 (en) | Improved differential pressure sensor isolation in a process fluid pressure transmitter | |
US8871024B2 (en) | High pressure apparatus and method for nitride crystal growth | |
EP2304404B1 (en) | Improved isolation system for process pressure measurement | |
US20180259414A1 (en) | Pressure sensor having overpressure protection with reduced output error | |
US9845910B2 (en) | Pressure compensator for subsea device | |
CN107771274B (zh) | 压力传递模块及具有压力传递模块的压力传感器 | |
EP2295135A1 (en) | Apparatus for processing materials in supercritical fluids | |
JP2011503576A (ja) | 圧力センサ | |
US20150115535A1 (en) | Seal having variable elastic modulus | |
WO2019212687A1 (en) | Regulator stability in a pressure regulated storage vessel | |
JP2020201252A (ja) | 保護用圧力機構を有する圧力センサアセンブリ | |
CN103201607B (zh) | 用于压力传感器的隔膜组件及设有此组件的压力传感器 | |
EP2930395B1 (en) | A noise reduction system, a method and a helicopter | |
CN101033759A (zh) | 用于调节流体工作压力的调节装置 | |
US9147571B2 (en) | Welded bellows for semiconductor manufacturing device | |
WO2017100404A1 (en) | Reactor systems having external pressure balancer | |
US9512835B2 (en) | High pressure bellows assembly | |
WO2017100564A1 (en) | Reactor systems having multiple pressure balancers | |
JPWO2009096379A1 (ja) | 圧力計測用加熱装置及び圧力計測装置 | |
KR101450532B1 (ko) | 다결정 실리콘 제조장치 | |
JP7166599B2 (ja) | ダイヤフラムバルブおよび流量制御装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20230809 Address after: Room 205, West Zone, 2nd Floor, No. 707 Zhangyang Road, China (Shanghai) Pilot Free Trade Zone, Pudong New Area, Shanghai Patentee after: GCL New (Shanghai) Photovoltaic Technology Co.,Ltd. Address before: Chinese Hongkong Kowloon Austin Road West No. 1, World Trade Plaza 17 floor, 1703B-1706 Patentee before: SUNEDISON, Inc. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20231103 Address after: 221000 No. 66, Yangshan Road, Xuzhou Economic and Technological Development Zone, Xuzhou City, Jiangsu Province Patentee after: JIANGSU ZHONGNENG POLYSILICON TECHNOLOGY DEVELOPMENT Co.,Ltd. Address before: Room 205, West District, 2nd floor, no.707 Zhangyang Road, China (Shanghai) pilot Free Trade Zone, Pudong New Area, Shanghai, 200120 Patentee before: GCL New (Shanghai) Photovoltaic Technology Co.,Ltd. |