CN107592104A - A kind of on-off circuit of mosfet transistor - Google Patents
A kind of on-off circuit of mosfet transistor Download PDFInfo
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- CN107592104A CN107592104A CN201710608048.4A CN201710608048A CN107592104A CN 107592104 A CN107592104 A CN 107592104A CN 201710608048 A CN201710608048 A CN 201710608048A CN 107592104 A CN107592104 A CN 107592104A
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- circuit
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- mosfet transistor
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- 238000010168 coupling process Methods 0.000 claims 1
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- 102100036285 25-hydroxyvitamin D-1 alpha hydroxylase, mitochondrial Human genes 0.000 description 3
- 101000875403 Homo sapiens 25-hydroxyvitamin D-1 alpha hydroxylase, mitochondrial Proteins 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
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Abstract
The present invention provides a kind of on-off circuit of mosfet transistor, and the circuit includes：Supply voltage source；Switching transistor, its collector are coupled by resistance and the supply voltage source, and emitter-base bandgap grading couples with first voltage output end；Mosfet transistor, its grid are coupled by resistance and the supply voltage source, and drain couples with the first voltage output end, and source electrode couples with second voltage output end.This new induced inside electric charge using mosfet transistor is come the source and drain electrode current of controlling switch pipe, instead of former relay contact band electric switch.Also reliability is improved while so as to reduce cost, reduces the overall volume of product, adds the overall efficiency of product.
Description
Technical field
The present invention relates to field of signal processing, more particularly to a kind of on-off circuit of mosfet transistor.
Background technology
The main output of converter doubleway output on the market at present is relay output, is had the shortcomings that the circuit following several
Point：
1st, often band high current disconnects adhesive for contact, so long-term use of easily sparking causes contact to be damaged；
2 and high current contact relay cost it is also high, the big power consumption of winding operating current causes overall efficiency low；
3rd, the big occupancy product space of relay volume.
4th, relay contact leads to after high current work due to that can produce conducting resistance after the contact of its mechanical contact so as to produce
Pressure drop causes the low influence overall efficiency of output voltage.
The content of the invention
In view of the shortcomings of the prior art, it is a primary object of the present invention to provide a kind of switch low in energy consumption, stability is strong
Circuit.
According to above-mentioned purpose, the present invention provides a kind of on-off circuit of mosfet transistor, and the circuit includes：Power supply electricity
Potential source；Switching transistor, its collector are coupled by resistance and the supply voltage source, and emitter-base bandgap grading couples with first voltage output end；
Mosfet transistor, its grid are coupled by resistance and the supply voltage source, and drain couples with the first voltage output end,
Source electrode couples with second voltage output end.
In one embodiment, the circuit also includes：First electric capacity in parallel with the first voltage output end.
In one embodiment, the circuit also includes：Second electric capacity in parallel with the second voltage output end.
In one embodiment, the model BSC011N03LS of the mosfet transistor.
A kind of on-off circuit of mosfet transistor provided by the invention, utilize the induced inside electric charge of mosfet transistor
Carry out the source and drain electrode current of controlling switch pipe, instead of former relay contact band electric switch.Also improved while so as to reduce cost
Reliability, the overall volume of product is reduced, add the overall efficiency of product.
Brief description of the drawings
Fig. 1 shows a kind of circuit diagram of the on-off circuit one side of mosfet transistor of the present invention；
Fig. 2 shows control relay on-off circuit figure.
Embodiment
In order that those skilled in the art more fully understand the technical scheme in the present invention, below in conjunction with of the invention real
The accompanying drawing in example is applied, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described implementation
Example is only part of the embodiment of the present invention, rather than whole embodiments.Based on the embodiment in the present invention, the common skill in this area
The every other embodiment that art personnel are obtained under the premise of creative work is not made, it should all belong to what the present invention protected
Scope.
Fig. 1 is refer to, Fig. 1 shows a kind of circuit diagram of the on-off circuit one side of mosfet transistor of the present invention.
On-off circuit includes external voltage source VDD1, and switching transistor Q1, switching transistor Q1 is by resistance R90 with external
Voltage source VDD1 is coupled, and switching transistor Q1 emitter-base bandgap grading is directly the same as the VO+1 connections of first voltage output end.When Q13E point high level
When, switching transistor Q1 conductings, voltage output end VO+1 has voltage output.
Mosfet transistor Q10 grid is coupled by resistance R87 and resistance R90 and supply voltage source VDD1, MOSFET
Transistor Q10 drain couples with first voltage output end, and source electrode couples with second voltage output end VO+2.
So, second voltage output end VO+2 will not be controlled by circuit, can normal output voltage.First voltage output end VO
+ 1 can be controlled by circuit, select output voltage or not output voltage.
D1 is Q10 inside equivalent diode, and when the battery reversal connection of output end, there will not be voltage and flow through Q10 causes
Machine breakdown.
In one embodiment, circuit also includes：The first electric capacity C57 in parallel with first voltage output end VO+1.
In one embodiment, circuit also includes：The second electric capacity C51 in parallel with second voltage output end VO+2.
In one embodiment, mosfet transistor Q10 model BSC011N03LS.
Circuit advantage provided by the invention is as follows：
1st, using the induced inside electric charge of MOS transistor come the source and drain electrode current of controlling switch pipe, so without mechanical contact
Damaged caused by sparking；
2nd, the resistance of its winding is that 300 ohm of operating currents are by taking relay NVF4-3A-Z80a-DC12V as an example
40mA, and with BSC011N03LS electric current in uA levels with regard to much of that；
3rd, relay NVF4-3A-Z80a-DC12V size is 29 × 29 × 26.5mm, power tube BSC011N03LS's
Space-consuming is 6 × 5 × 1mm, and it is obvious to save space；
4th, relay NVF4-3A-Z80a-DC12V contacts resistance 10m Ω, power tube BSC011N03LS turn on internal resistance
1.1m Ω, such as output current 40A, the loss for flowing through relay contact is 16W, and flows through power tube BSC011N03LS loss
It is obvious for 1.76W power savings.
In addition, although the present specification is described in terms of embodiments, not each embodiment is only only comprising one
Vertical technical scheme, this narrating mode of specification only for clarity, those skilled in the art should using specification as
One entirety, the technical solutions in the various embodiments may also be suitably combined, formed it will be appreciated by those skilled in the art that its
His embodiment.
Claims (4)
1. a kind of on-off circuit of mosfet transistor, it is characterised in that the circuit includes：
Supply voltage source；
Switching transistor, its collector are coupled by resistance and the supply voltage source, and emitter-base bandgap grading couples with first voltage output end；
Mosfet transistor, its grid are coupled by resistance and the supply voltage source, drain and the first voltage output end
Coupling, source electrode couple with second voltage output end.
2. on-off circuit as claimed in claim 1, it is characterised in that the circuit also includes：
First electric capacity in parallel with the first voltage output end.
3. on-off circuit as claimed in claim 1, it is characterised in that the circuit also includes：
Second electric capacity in parallel with the second voltage output end.
4. on-off circuit as claimed in claim 1, it is characterised in that the model of the mosfet transistor
BSC011N03LS。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710608048.4A CN107592104A (en) | 2017-07-24 | 2017-07-24 | A kind of on-off circuit of mosfet transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710608048.4A CN107592104A (en) | 2017-07-24 | 2017-07-24 | A kind of on-off circuit of mosfet transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107592104A true CN107592104A (en) | 2018-01-16 |
Family
ID=61041750
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710608048.4A Pending CN107592104A (en) | 2017-07-24 | 2017-07-24 | A kind of on-off circuit of mosfet transistor |
Country Status (1)
| Country | Link |
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| CN (1) | CN107592104A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4316101A (en) * | 1978-11-30 | 1982-02-16 | Licentia-Patent-Verwaltungs-G.M.B.H. | Circuit for switching and transmitting alternating voltages |
| CN102804538A (en) * | 2009-06-24 | 2012-11-28 | 松下电器产业株式会社 | Power supply protection circuit and motor drive device provided with same |
| CN203027228U (en) * | 2012-12-20 | 2013-06-26 | 深圳Tcl新技术有限公司 | Soft start electronic switch and direct current power supply |
| CN204068682U (en) * | 2014-08-23 | 2014-12-31 | 成都四威航空电源有限公司 | A kind of high-power low-loss surge restraint circuit |
-
2017
- 2017-07-24 CN CN201710608048.4A patent/CN107592104A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4316101A (en) * | 1978-11-30 | 1982-02-16 | Licentia-Patent-Verwaltungs-G.M.B.H. | Circuit for switching and transmitting alternating voltages |
| CN102804538A (en) * | 2009-06-24 | 2012-11-28 | 松下电器产业株式会社 | Power supply protection circuit and motor drive device provided with same |
| CN203027228U (en) * | 2012-12-20 | 2013-06-26 | 深圳Tcl新技术有限公司 | Soft start electronic switch and direct current power supply |
| CN204068682U (en) * | 2014-08-23 | 2014-12-31 | 成都四威航空电源有限公司 | A kind of high-power low-loss surge restraint circuit |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
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| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180116 |