CN107589869A - Display module - Google Patents
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- CN107589869A CN107589869A CN201710801375.1A CN201710801375A CN107589869A CN 107589869 A CN107589869 A CN 107589869A CN 201710801375 A CN201710801375 A CN 201710801375A CN 107589869 A CN107589869 A CN 107589869A
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- display module
- strain gauge
- tft
- film transistor
- thin film
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Abstract
The present invention, which discloses display module, includes substrate, luminescent layer and display driving thin film transistor (TFT), strain gauge transducer is embedded with the display module, the strain gauge transducer and the display driving thin film transistor (TFT) are respectively provided with the substrate and be respectively positioned between the luminescent layer and the substrate.Strain gauge transducer is embedded in display module and is arranged between luminescent layer and substrate by display module, on the one hand, strain gauge transducer will not block luminescent layer, so as to lift the definition of display module display image picture；On the other hand, strain gauge transducer is nearer apart from user, improves the sensitivity of strain gauge transducer pressure detecting.
Description
Technical field
The present invention relates to technical field of touch control, more particularly to a kind of display module.
Background technology
In the existing mobile phone with pressure detecting function, pressure sensor be arranged on cover sheet (or touch panel) with
Between display module, because the translucency of pressure sensor is poor, pressure sensor can block display module so as to cause mobile phone
Display effect it is poor, and then reduce Consumer's Experience.
The content of the invention
Embodiments of the present invention provide a kind of display module.
The display module of embodiment of the present invention includes substrate, luminescent layer and display driving thin film transistor (TFT), the display
Strain gauge transducer is embedded with module, the strain gauge transducer is arranged at described with the display driving thin film transistor (TFT)
On substrate and it is respectively positioned between the luminescent layer and the substrate.
Strain gauge transducer is embedded in display module and is arranged on luminescent layer by the display module of embodiment of the present invention
Between substrate, on the one hand, strain gauge transducer will not block luminescent layer, so as to lift the clear of display module display image picture
Clear degree；On the other hand, strain gauge transducer is nearer apart from user, improves the sensitivity of strain gauge transducer pressure detecting.
In some embodiments, the strain gauge transducer includes semiconductor gauge and the strain detecting being connected to each other
Thin film transistor (TFT), the strain detecting thin film transistor (TFT) drive thin film transistor (TFT) to be respectively formed on the substrate with the display.
Because strain detecting thin film transistor (TFT) is to showing that driving thin film transistor (TFT) has similar material property, therefore strain detecting film
Transistor AND gate display driving thin film transistor (TFT) can be produced on substrate by same or analogous technique, so as to reduce system
Make the technological process of display module.
In some embodiments, the strain detecting thin film transistor (TFT) is arranged on the semiconductor gauge and the base
Between plate.In this way, it is easy to the circuit and semiconductor gauge on strain detecting thin film transistor (TFT) electrical connection substrate.
In some embodiments, the strain detecting thin film transistor (TFT) is arranged at described with the semiconductor gauge
On the same surface of substrate.So, on the one hand, the circuit and semiconductor being easy on strain detecting thin film transistor (TFT) electrical connection substrate
Foil gauge；On the other hand it is easy to the making of strain gauge transducer.
In some embodiments, the display module also includes the anode and negative electrode for being arranged on the luminescent layer both sides,
The anode is connected with the display driving thin film transistor (TFT), and the anode is arranged on the remote described of the strain gauge transducer
The side of substrate.In this way, it is easy to anode to be electrically connected with display driving thin film transistor (TFT).
In some embodiments, the quantity of the strain gauge transducer is multiple that the luminescent layer includes multiple pixels
Unit, each strain gauge transducer correspond to multiple pixel cells.Due to strain gauge transducer quantity be one when,
Strain gauge transducer easily causes the accuracy of detection of strain gauge transducer relatively low when manufacture, installation etc. have error, because
This, sets multiple strain gauge transducers in display module, and display module can be produced by handling multiple strain gauge transducers
Signal to reduce error caused by strain gauge transducer, so as to lift the accuracy of detection of strain gauge transducer.
In some embodiments, the quantity of the strain gauge transducer is multiple that the luminescent layer includes multiple pixels
Unit, each corresponding semiconductor gauge of the pixel cell and a strain detecting thin film transistor (TFT).By
When the quantity of strain gauge transducer is one, strain gauge transducer easily causes when manufacture, installation etc. have error
The accuracy of detection of strain gauge transducer is relatively low, therefore, sets multiple strain gauge transducers in display module, and display module can be with
By handling signal caused by multiple strain gauge transducers to reduce error caused by strain gauge transducer, so as to lift strain-type
The accuracy of detection of sensor.
In some embodiments, the display driving thin film transistor (TFT) is arranged on the strain detecting thin film transistor (TFT)
The same side of the corresponding pixel cell.In this way, it is easy to display driving thin film transistor (TFT) and strain detecting thin film transistor (TFT)
It is produced on substrate
In some embodiments, the display module also include being arranged on the anode and the strain gauge transducer it
Between screen layer.Screen layer can reduce strain gauge transducer to electromagnetic interference caused by anode and electrostatic interference, so as to be lifted
The definition of the display picture of display module.
In some embodiments, the display module also includes temperature sensor and processor, the processor and institute
State temperature sensor and the strain gauge transducer is all connected with, the temperature that the processor detects according to the temperature sensor is mended
Repay the power that the strain gauge transducer detects.Because display module shape of expanding with heat and contract with cold and occur can occur with the change of temperature
Become, display module, which is deformed upon, to drive strain gauge transducer to deform upon, while strain gauge transducer can also be sent out with temperature
Raw deformation, therefore, strain gauge transducer can be affected by temperature and cause accuracy of detection to reduce.Processor is according to TEMP
The power that the temperature-compensating strain gauge transducer that device detects detects, so as to lift the precision of the pressing force of display module acquisition.
In some embodiments, the display module also includes dummy gauge and compensation circuit, the compensation circuit
It is all connected with the dummy gauge and the strain gauge transducer, the dummy gauge is used for according to caused by temperature change
Electric signal, compensation circuit electric signal according to caused by the dummy gauge compensate the strain gauge transducer according to temperature
Electric signal caused by change is to compensate the power that the strain gauge transducer detects.The compensation circuit of present embodiment is according to compensation
Foil gauge compensates strain gauge transducer signal according to caused by temperature change according to the electric signal as caused by temperature change, so as to disappear
Except as temperature change to caused by strain gauge transducer interference, so as to lifted display module acquisition pressing force precision.
In some embodiments, the material of the semiconductor gauge includes organic semiconductor, the organic semiconductor
Including organic species semiconductor, polymer based semiconductor and donor-acceptor complexes based semiconductor.Due to organic semiconductor toughness
Preferably, therefore semiconductor gauge has preferable toughness and buckle resistance energy made of organic semiconductor.
The additional aspect and advantage of embodiments of the present invention will be set forth in part in the description, partly will be from following
Description in become obvious, or recognized by the practice of embodiments of the present invention.
Brief description of the drawings
The above-mentioned and/or additional aspect and advantage of the present invention is from combining in description of the accompanying drawings below to embodiment by change
Obtain substantially and be readily appreciated that, wherein：Illustrating in newly-increased accompanying drawing modification, specification
Fig. 1 is the sectional view of the display module of some embodiments of the present invention；
Fig. 2 is the sectional view of the display module of some embodiments of the present invention；
Fig. 3 is the sectional view of the display module of some embodiments of the present invention；
Fig. 4 is the partial sectional view of the display module of some embodiments of the present invention；
Fig. 5 is the partial sectional view of the display module of some embodiments of the present invention；
Fig. 6 is the sectional view of the display module of some embodiments of the present invention；
Fig. 7 is the sectional view of the display module of some embodiments of the present invention；With
Fig. 8 is the sectional view of the display module of some embodiments of the present invention.
Embodiment
Embodiments of the present invention are described below in detail, the example of the embodiment is shown in the drawings, wherein from beginning
Same or similar element is represented to same or similar label eventually or there is the element of same or like function.Below by ginseng
The embodiment for examining accompanying drawing description is exemplary, is only used for explaining the present invention, and is not considered as limiting the invention.
In the description of the invention, it is to be understood that term " " center ", " longitudinal direction ", " transverse direction ", " length ", " width ",
" thickness ", " on ", " under ", "front", "rear", "left", "right", " vertical ", " level ", " top ", " bottom ", " interior ", " outer ", " up time
The orientation or position relationship of the instruction such as pin ", " counterclockwise " are based on orientation shown in the drawings or position relationship, are for only for ease of
Description is of the invention to be described with simplified, rather than the device or element of instruction or hint meaning must be with specific orientation, Yi Te
Fixed azimuth configuration and operation, therefore be not considered as limiting the invention.In addition, term " first ", " second " are only used for
Purpose is described, and it is not intended that instruction or hint relative importance or the implicit quantity for indicating indicated technical characteristic.
Thus, " first " is defined, the feature of " second " can be expressed or implicitly includes one or more feature.
In description of the invention, " multiple " are meant that two or more, unless otherwise specifically defined.
In the description of the invention, it is necessary to illustrate, unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " should be interpreted broadly, for example, it may be being fixedly connected or being detachably connected, or be integrally connected；Can
To be mechanical connection or electrical connection or can mutually communicate；Can be joined directly together, can also be by between intermediary
Connect connected, can be connection or the interaction relationship of two elements of two element internals.For the ordinary skill of this area
For personnel, the concrete meaning of above-mentioned term in the present invention can be understood as the case may be.
In the present invention, unless otherwise clearly defined and limited, fisrt feature second feature it " on " or it " under "
Can directly it be contacted including the first and second features, it is not directly to contact but pass through it that can also include the first and second features
Between other characterisation contact.Moreover, fisrt feature second feature " on ", " top " and " above " to include first special
Sign is directly over second feature and oblique upper, or is merely representative of fisrt feature level height and is higher than second feature.Fisrt feature exists
Second feature " under ", " lower section " and " following " fisrt feature that includes are immediately below second feature and obliquely downward, or be merely representative of
Fisrt feature level height is less than second feature.
Following disclosure provides many different embodiments or example is used for realizing the different structure of the present invention.In order to
Simplify disclosure of the invention, hereinafter the part and setting of specific examples are described.Certainly, they are only example, and
And purpose does not lie in the limitation present invention.In addition, the present invention can in different examples repeat reference numerals and/or reference letter,
This repetition is for purposes of simplicity and clarity, between itself not indicating discussed various embodiments and/or setting
Relation.In addition, the invention provides various specific techniques and material examples, but those of ordinary skill in the art can be with
Recognize the application of other techniques and/or the use of other materials.
Referring to Fig. 1, the display module 100 of embodiment of the present invention includes substrate 10, luminescent layer 20 and shows that driving is thin
Film transistor 30.Strain gauge transducer 40, strain gauge transducer 40 and display driving film crystal are embedded with display module 100
Pipe 30 is respectively provided with the substrate 10 and is respectively positioned between luminescent layer 20 and substrate 10.
Strain gauge transducer 40 is arranged on the side of the remote user of luminescent layer 20, and therefore, strain gauge transducer 40 will not
Block luminescent layer 20 so that the definition of the display picture of display module 100 is higher.When user's touch-control display module 100, strain
Formula sensor 40 is more remote apart from the position that user touches, and deformation and change amount signal are also smaller caused by strain gauge transducer 40,
Therefore, when strain gauge transducer 40 is embedded in display module 100 relative to the one of the remote user for being arranged on display module 100
Side can caused by deformation and change amount signal it is bigger so that strain gauge transducer 40 in display module 100 detects user
The sensitivity for the power being pressed against in display module 100 is higher.
Strain gauge transducer 40 is embedded in display module 100 and set by the display module 100 of embodiment of the present invention
Between luminescent layer 20 and substrate 10, on the one hand, strain gauge transducer 40 will not block luminescent layer 20, so as to lift display module
The definition of 100 display image pictures；On the other hand, strain gauge transducer 40 is nearer apart from user, improves strain gauge transducer
The sensitivity of 40 pressure detectings.
Referring to Fig. 1, the display module 100 of embodiment of the present invention includes substrate 10, luminescent layer 20, display driving film
Transistor 30, strain gauge transducer 40, anode 50 and negative electrode 60.Specifically, substrate 10, display driving thin film transistor (TFT) 30, sun
Pole 50, luminescent layer 20 and negative electrode 60 are set gradually along the direction close to user.Display module 100 is OLED display modules,
Specifically, display module 100 can be the OLED display modules of top ray structure or the OLED display modules of bottom ray structure.It is excellent
Choosing, display module 100 is pushes up the OLED display modules of ray structure, so as to embed strain gauge transducer in display module 100
The aperture opening ratio of display module 100 is not interfered with when 40.
Substrate 10 is made of clear material, specifically, substrate 10 can by glass, polyimides (Polyimide, PI),
Polymethyl methacrylate (PolymethylMethacrylate, PMMA), makrolon (Polycarbonate, PC), poly- pair
Polyethylene terephthalate (Polyethyleneterephtalate, PET), cyclenes macromolecule (Cyclo Olefin
Polymers, COP), have high surface hardness organic/inorganic composite material formed.In the present embodiment, substrate 10 is in square
Shape.In other embodiments, substrate 10 can also rounded, oval, track type, triangle, polygon.
Luminescent layer 20 is set on the substrate 10.
Display driving thin film transistor (TFT) 30 is arranged between substrate 10 and luminescent layer 20.
Fig. 2 and Fig. 3 is referred to, strain gauge transducer 40 is arranged between substrate 10 and luminescent layer 20, strain gauge transducer
40 quantity can be one or more.Strain gauge transducer 40 includes semiconductor gauge 42 and the strain detecting being connected to each other
Thin film transistor (TFT) 44.Strain detecting thin film transistor (TFT) 44 is respectively formed on the substrate 10 with display driving thin film transistor (TFT) 30, also
It is to say, substrate 10 can be as the branch support group for making strain detecting thin film transistor (TFT) 44 and display driving thin film transistor (TFT) 30
Plate.Strain detecting thin film transistor (TFT) 44 can be located on same layer or on different layers with display driving thin film transistor (TFT) 30.Should
When becoming detection thin film transistor (TFT) 44 with showing that driving thin film transistor (TFT) 30 is located on different layers, semiconductor gauge 42 can be set
Between strain detecting thin film transistor (TFT) 44 and luminescent layer 20, that is to say, that strain detecting thin film transistor (TFT) 44, which is arranged on, partly leads
Between body strain piece 42 and substrate 10.The material of semiconductor gauge 42 can be using silicon, germanium as matrix and adulterate include boron,
The mixture of the formation such as aluminium, gallium, indium, phosphorus, antimony, arsenic.The material of semiconductor gauge 42 can also include organic semiconductor, organic
Semiconductor includes organic species semiconductor, polymer based semiconductor and charge transfer complex based semiconductor.Organic species are partly led
Body includes aromatic hydrocarbons, dyestuff, metallo-organic compound, for example, purpurine, phthalocyanine etc..Polymer based semiconductor is saturation including main chain
Birds of the same feather flock together compound and conjugated type polymer, for example, polyphenyl, polyacetylene, polyvinylcarbazole, polyphenylene sulfide etc..Charge transfer complex
Based semiconductor is made up of electronq donor and electron acceptor two parts, for example, tetramethyl-para-phenylene diamine and four cyano quinone diformazan
Alkane compound.Preferably, the material of semiconductor gauge 42 is organic semiconductor.Fig. 1 and Fig. 3 is referred to, in other embodiment party
In formula, semiconductor gauge 42 can be located on same layer with strain detecting thin film transistor (TFT) 44.Referring to Fig. 2, in some realities
Apply in mode, semiconductor gauge 42 can be with strain detecting thin film transistor (TFT) 44 and display driving thin film transistor (TFT) 30 positioned at not
With on layer.
Anode 50 is arranged between strain gauge transducer 40 and luminescent layer 20.Anode 50 and display driving thin film transistor (TFT) 30
Electrical connection.
Negative electrode 60 is arranged on the side of remote anode 50 of luminescent layer 20.
Strain gauge transducer 40 is embedded in display module 100 and set by the display module 100 of embodiment of the present invention
Between luminescent layer 20 and substrate 10, on the one hand, strain gauge transducer 40 will not block luminescent layer 20, so as to lift display module
The definition of 100 display image pictures；On the other hand, strain gauge transducer 40 is nearer apart from user, improves strain gauge transducer
The sensitivity of 40 pressure detectings.
The display module 100 of embodiment of the present invention also has the advantages that：First, because strain detecting film is brilliant
Body pipe 44 has similar material property, therefore strain detecting thin film transistor (TFT) 44 and display to display driving thin film transistor (TFT) 30
Drive thin film transistor (TFT) 30 to be made by same or analogous technique on the substrate 10, mould is shown so as to reduce to make
The technological process of group 100.
Second, semiconductor gauge 42 can be with strain detecting thin film transistor (TFT) 44 and display driving thin film transistor (TFT) 30
In on same layer, the thickness of display module 100 can be reduced.
3rd, because organic semiconductor toughness is preferable, therefore semiconductor gauge 42 has made of organic semiconductor
Preferable toughness and buckle resistance energy.
Fig. 3 and Fig. 4 is referred to, in some embodiments, the quantity of the strain gauge transducer 40 of above-mentioned embodiment is
Multiple, luminescent layer 20 includes multiple pixel cells 102, the corresponding multiple pixel cells 102 of each strain gauge transducer 40.Due to answering
When the quantity of variant sensor 40 is one, strain gauge transducer 40 easily causes when manufacture, installation etc. have error
The accuracy of detection of strain gauge transducer 40 is relatively low, therefore, sets multiple strain gauge transducers 40 in display module 100, shows mould
Group 100 can by handling signal caused by multiple strain gauge transducers 40 to reduce error caused by strain gauge transducer 40,
So as to lift the accuracy of detection of strain gauge transducer 40.
Fig. 4 and Fig. 5 is referred to, in some embodiments, the quantity of the strain gauge transducer 40 of above-mentioned embodiment is
Multiple, luminescent layer 20 includes multiple pixel cells 102, and each pixel cell 102 corresponds to a semiconductor gauge 42 and one
Strain detecting thin film transistor (TFT) 44.Specifically, substrate 10, display driving thin film transistor (TFT) 30, strain gauge transducer 40, anode
50th, the gap between pixel cell 102 and negative electrode 60 can be filled with one or more layers insulating barrier 106.Due to strain gauge transducer
When 40 quantity is one, strain gauge transducer 40 easily causes strain-type to sense when manufacture, installation etc. have error
The accuracy of detection of device 40 is relatively low, therefore, sets multiple strain gauge transducers 40 in display module 100, display module 100 can lead to
Cross and handle signal caused by multiple strain gauge transducers 40 to reduce error caused by strain gauge transducer 40, so as to lift strain
The accuracy of detection of formula sensor 40.
Fig. 4 and Fig. 5 is referred to, in some embodiments, the quantity of the strain gauge transducer 40 of above-mentioned embodiment is
Multiple, luminescent layer 20 includes multiple pixel cells 102, and each pixel cell 102 corresponds to a semiconductor gauge 42 and one
Strain detecting thin film transistor (TFT) 44.Display driving thin film transistor (TFT) 30 is arranged on corresponding picture with strain detecting thin film transistor (TFT) 44
The same side of plain unit 102.Present embodiment is easy to display driving thin film transistor (TFT) 30 and strain detecting thin film transistor (TFT)
44 make on the substrate 10.In other embodiments, semiconductor gauge 42 be arranged on display driving thin film transistor (TFT) 30 with
It is in together between strain detecting thin film transistor (TFT) 44 and with display driving thin film transistor (TFT) 30 and strain detecting thin film transistor (TFT) 44
On one layer.Now, the thickness of display module 100 can be made thinner.
Referring to Fig. 6, in some embodiments, the display module 100 of above-mentioned embodiment also includes being arranged on anode
Screen layer 70 between 50 and strain gauge transducer 40.Specifically, screen layer 70 be conductor material be made and with display module 100
Ground wire connection, screen layer 70 can reduce strain gauge transducer 40 to electromagnetic interference and electrostatic interference caused by anode 50, from
And lift the definition of the display picture of display module 100.
Referring to Fig. 7, in some embodiments, the display module 100 of above-mentioned embodiment also includes temperature sensor
80 and processor 90, processor 90 electrically connected with temperature sensor 80 and strain gauge transducer 40, processor 90 is according to temperature
The power that the temperature-compensating strain gauge transducer 40 that sensor 80 detects detects.Temperature sensor 80 is arranged on display module 100
On, specifically, temperature sensor 80 can be set on the substrate 10, and the quantity of temperature sensor 80 can be one or more.
Because display module 100 can be as expanding with heat and contract with cold occurs in the change of temperature and deforms upon, display module 100 deforms upon can band
Dynamic strain formula sensor 40 deforms upon, while strain gauge transducer 40, easily as temperature deforms upon, therefore, strain-type passes
The meeting of sensor 40 is affected by temperature and causes accuracy of detection to reduce.Specifically, each temperature residing for strain gauge transducer 40
The compensation numerical value for needing to compensate strain gauge transducer 40 can be corresponded to, processor 90 can be according to temperature sensor 80
The signal correction strain-type sensing that the corresponding compensation numerical value of temperature, the temperature and strain gauge transducer 40 detected detects
Device 40 detects obtained power.For example, temperature sensor 80 detects that the temperature of display module 100 (or strain gauge transducer 40) is
At 40 DEG C, wherein the compensation numerical value of strain gauge transducer 40 is W at such a temperature, the letter that now strain gauge transducer 40 detects
Number it is S, then processor 90 can multiply with signal S-phase or be added to obtain correction strain gauge transducer 40 according to by compensation numerical value W
Detect obtained power.The temperature-compensating strain gauge transducer that the processor 90 of present embodiment detects according to temperature sensor 80
40 power detected, so as to lift the precision of the pressing force of the acquisition of display module 100.
Referring to Fig. 8, in some embodiments, the display module 100 of above-mentioned embodiment also includes dummy gauge
103 and compensation circuit 104, compensation circuit 104 electrically connected with dummy gauge 103 and strain gauge transducer 40, compensation strain
Piece 103 is used to produce electric signal according to temperature change, and the electric signal according to caused by dummy gauge 103 of compensation circuit 104 compensates
The electric signal according to caused by temperature change of strain gauge transducer 40, to compensate the power that strain gauge transducer 40 detects.Specifically,
Dummy gauge 103 is arranged on substrate 10, luminescent layer 20, display driving thin film transistor (TFT) 30, strain gauge transducer 40, anode 50
And the outside of negative electrode 60, dummy gauge 104 will not depressed power influence；That is, dummy gauge 104 is only used for
Electric signal is produced without producing electric signal according to pressing force according to temperature change.Compensation circuit 104 can be bridge circuit, compensation
Circuit 104 can subtract dummy gauge 103 with the electric signal that controlled strain formula sensor 40 detects and be produced according to temperature change
Electric signal, detect obtained power to compensate strain gauge transducer 40.The compensation circuit 104 of present embodiment strains according to compensation
Piece 103 compensates the signal according to caused by temperature change of strain gauge transducer 40 according to the electric signal as caused by temperature change, so as to
Eliminate by temperature change to being disturbed caused by strain gauge transducer 40, so as to lift the pressing force of the acquisition of display module 100
Precision.
In the description of this specification, reference term " some embodiments ", " embodiment ", " some embodiment party
The description of formula ", " exemplary embodiment ", " example ", " specific example " or " some examples " etc. means with reference to the embodiment party
Formula or specific features, structure, material or the feature of example description are contained at least one embodiment or example of the present invention
In.In this manual, identical embodiment or example are not necessarily referring to the schematic representation of above-mentioned term.Moreover,
Specific features, structure, material or the feature of description can be in any one or more embodiments or example with suitable
Mode combine.
In addition, term " first ", " second " are only used for describing purpose, and it is not intended that instruction or hint relative importance
Or the implicit quantity for indicating indicated technical characteristic.Thus, define " first ", the feature of " second " can be expressed or
Implicitly include at least one feature.In the description of the invention, " multiple " are meant that at least two, such as two,
Three etc., unless otherwise specifically defined.
Although embodiments of the present invention have been shown and described above, it is to be understood that above-mentioned embodiment is
Exemplary, it is impossible to limitation of the present invention is interpreted as, one of ordinary skill in the art within the scope of the invention can be right
Above-mentioned embodiment is changed, changed, replacing and modification, the scope of the present invention are limited by claim and its equivalent.
Claims (10)
1. a kind of display module, it is characterised in that the display module includes substrate, luminescent layer and display driving film crystal
Manage, strain gauge transducer is embedded with the display module, the strain gauge transducer drives thin film transistor (TFT) with the display
It is respectively provided with the substrate and is respectively positioned between the luminescent layer and the substrate.
2. display module according to claim 1, it is characterised in that the strain gauge transducer includes half to be connected to each other
Conductor foil gauge and strain detecting thin film transistor (TFT), the strain detecting thin film transistor (TFT) drive thin film transistor (TFT) with the display
It is respectively formed on the substrate.
3. display module according to claim 2, it is characterised in that the strain detecting thin film transistor (TFT) is arranged on described
Between semiconductor gauge and the substrate；Or
The strain detecting thin film transistor (TFT) is arranged on the same surface of the substrate with the semiconductor gauge.
4. display module according to claim 1, it is characterised in that the display module also includes being arranged on described light
The anode and negative electrode of layer both sides, the anode are connected with the display driving thin film transistor (TFT), and the anode is arranged on described answer
The side of the remote substrate of variant sensor.
5. display module according to claim 1, it is characterised in that the quantity of the strain gauge transducer is multiple, institute
Stating luminescent layer includes multiple pixel cells, and each strain gauge transducer corresponds to multiple pixel cells.
6. display module according to claim 2, it is characterised in that the quantity of the strain gauge transducer is multiple, institute
Stating luminescent layer includes multiple pixel cells, and each pixel cell corresponds to should described in a semiconductor gauge and one
Become detection thin film transistor (TFT).
7. display module according to claim 6, it is characterised in that the display driving thin film transistor (TFT) and the strain
Detection thin film transistor (TFT) is arranged on the same side of the corresponding pixel cell.
8. display module according to claim 4, it is characterised in that the display module also includes being arranged on the anode
With the screen layer between the strain gauge transducer.
9. display module according to claim 1, it is characterised in that the display module also includes temperature sensor and place
Device is managed, the processor is all connected with the temperature sensor and the strain gauge transducer, and the processor is according to the temperature
The power that strain gauge transducer described in the temperature-compensating of degree sensor detection detects；Or
The display module also includes dummy gauge and compensation circuit, the compensation circuit and the dummy gauge and described
Strain gauge transducer is all connected with, and the dummy gauge is used for electric signal, the compensation circuit root according to caused by temperature change
According to electric signal caused by the dummy gauge compensate the strain gauge transducer according to caused by temperature change electric signal to mend
Repay the power that the strain gauge transducer detects.
10. display module according to claim 1, it is characterised in that the material of the semiconductor gauge includes organic
Semiconductor, the organic semiconductor are partly led including organic species semiconductor, polymer based semiconductor and donor-acceptor complexes class
Body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710801375.1A CN107589869A (en) | 2017-09-07 | 2017-09-07 | Display module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710801375.1A CN107589869A (en) | 2017-09-07 | 2017-09-07 | Display module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107589869A true CN107589869A (en) | 2018-01-16 |
Family
ID=61050294
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710801375.1A Pending CN107589869A (en) | 2017-09-07 | 2017-09-07 | Display module |
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| Country | Link |
|---|---|
| CN (1) | CN107589869A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110764644A (en) * | 2019-10-11 | 2020-02-07 | 维沃移动通信有限公司 | Electronic device and pressure compensation method |
| CN113838386A (en) * | 2020-12-18 | 2021-12-24 | 友达光电股份有限公司 | Display device |
-
2017
- 2017-09-07 CN CN201710801375.1A patent/CN107589869A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110764644A (en) * | 2019-10-11 | 2020-02-07 | 维沃移动通信有限公司 | Electronic device and pressure compensation method |
| CN110764644B (en) * | 2019-10-11 | 2023-04-11 | 维沃移动通信有限公司 | Electronic device and pressure compensation method |
| CN113838386A (en) * | 2020-12-18 | 2021-12-24 | 友达光电股份有限公司 | Display device |
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