CN107589603B - Active matrix substrate and display device - Google Patents
Active matrix substrate and display device Download PDFInfo
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- CN107589603B CN107589603B CN201710741947.1A CN201710741947A CN107589603B CN 107589603 B CN107589603 B CN 107589603B CN 201710741947 A CN201710741947 A CN 201710741947A CN 107589603 B CN107589603 B CN 107589603B
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- 239000000758 substrate Substances 0.000 title claims abstract description 88
- 239000011159 matrix material Substances 0.000 title abstract description 6
- 239000003990 capacitor Substances 0.000 claims abstract description 177
- 239000002184 metal Substances 0.000 claims description 18
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 230000005611 electricity Effects 0.000 claims description 5
- 239000003960 organic solvent Substances 0.000 claims description 4
- 239000002082 metal nanoparticle Substances 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 238000000034 method Methods 0.000 description 92
- 230000008569 process Effects 0.000 description 66
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- 230000015572 biosynthetic process Effects 0.000 description 24
- 238000005520 cutting process Methods 0.000 description 23
- 230000007547 defect Effects 0.000 description 21
- 239000004973 liquid crystal related substance Substances 0.000 description 20
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- 238000004519 manufacturing process Methods 0.000 description 12
- 238000012797 qualification Methods 0.000 description 10
- 239000002923 metal particle Substances 0.000 description 7
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- 238000007689 inspection Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
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Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
- G02F1/136263—Line defects
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal (AREA)
Abstract
The present application provides an active matrix substrate comprising: a substrate; a plurality of pixel electrodes constituting respective pixels; a plurality of first gate lines respectively disposed between the pixel electrodes; a plurality of first source lines respectively disposed between the pixel electrodes and extending in a direction crossing the first gate lines; a plurality of first capacitance lines respectively arranged between the first gate lines and extending in a non-parallel manner; a plurality of switching elements respectively disposed on each of the pixel electrodes; a plurality of second source lines respectively disposed between the pixel electrodes and extending in parallel with the first source lines; a plurality of second gate lines respectively disposed between the pixel electrodes and extending parallel to the first gate lines; and a plurality of second capacitor lines extending adjacent to and nonparallel to the first capacitor lines; wherein each first gate line, each first capacitor line, each first source line, each second gate line, each second capacitor line, and each second source line are not electrically connected to each other.
Description
Technical field
This application involves technical field of liquid crystal display more particularly to a kind of active array substrate for carrying out defect correction and show
The technology of showing device.
Background technique
The function mode of flat-panel screens is to control each pixel for being arranged in array with two groups of orthogonal addressed lines
(pixel), reach the purpose of imaging.In various imaging control models, most-often used is that grid line is connected with source electrode line
To open or close corresponding switch block, so that the signal that is transmitted of each grid line can be in writing pixel, to change pair
The state for the pixel answered, and reach the purpose of control display picture.
Fig. 8 is the plan view for indicating a pixel of existing active array substrate 120.This active matrix village bottom 120,
Include: be arranged to rectangular multiple pixel electrodes 112, the thin film transistor (TFT) being arranged on each pixel electrode 112 (TFT:
Thin Film Transistor) 105, multiple grid lines 101 for being extended parallel to each other between each pixel electrode 112, with it is each
Grid line 101 intersect at a plurality of source electrode line 103 extended parallel to each other between each pixel electrode 112, each grid line 101 it
Between the capacitor line 102 that extends parallel to each other.
Thin film transistor (TFT) (TFT) 105 includes: the gate electrode 101a being connected on grid line 101, with covering grid electrode 101a
Mode be arranged semiconductor layer 104, be connected to the source electrode line 103 being arranged on semiconductor layer 104 source electrode 103a, half
The drain electrode 103b being arranged in a manner of with source electrode 103a face-off in conductor layer 104.Also, drain electrode 103b extends setting and exists
The region that capacitor line 102 extends, being connected to pixel electrode 112 by wiring hole 111b becomes drain electrode extraction electrode 107 and capacitor
Electrode 106.
In addition, including the active array substrate 120 of above-mentioned composition, the counter substrate with common electrode, including that setting exists
In the liquid crystal display (liquid crystal display panel) of the liquid crystal layer of liquid crystal molecule between this two villages bottom, by thin film transistor (TFT) (TFT)
105 switch function, the portrait signal suitable to the transmitting of each pixel electrode 112 being connected on thin film transistor (TFT) (TFT) 105,
Thus portrait is shown.In addition, in active matrix village bottom 120, the liquid of 105 non-conduction period of thin film transistor (TFT) (TFT) in order to prevent
The portrait Signal Degrade of the self discharge of crystal layer or the non-conduction electric current due to thin film transistor (TFT) (TFT) 105, or be used in
The various application pathways etc. for becoming humorous signal in liquid crystal drive, form auxiliary electricity between capacitor line 102 and capacitance electrode 106
Hold.
Although flat-panel screens technology has become mature, the composition component of display panel, such as active block multiple substrate,
It can inevitably be generated in manufacturing process some flaws (defect).For example, grid line on active array substrate and source electrode line because
Its length is very long, therefore is easy to happen the situation of broken string.It, just can not be on the pixel electrode when grid line and source electrode line break
Apply normal voltage (drain voltage), so, it can see on the display picture of liquid crystal display along this grid
The linear point shortcoming of line.If the number of this linear point shortcoming increases, this liquid crystal display just becomes bad, also
Reduce the manufacture qualification rate of liquid crystal display.
Summary of the invention
In view of the above problem in the prior art, this application provides can repair broken string to improve liquid crystal display
Manufacture the active array substrate and display device of qualification rate.
On the one hand, the embodiment of the present application provides a kind of active array substrate, comprising: substrate；Setting is over the substrate
And at rectangular, multiple pixel electrodes of each pixel are constituted；A plurality of first grid polar curve is separately positioned on each pixel electrode
Between, and extend parallel to each other；A plurality of first source electrode line is separately positioned between each pixel electrode, along with described each the
The direction that one grid line intersects extends；A plurality of first capacitor line is separately positioned between each first grid polar curve, and non-each other
It extends in parallel；Multiple switch component is separately positioned on each each pixel electrode, is connected to each pixel electrode, institute
State each first grid polar curve, each first capacitor line and each first source electrode line；A plurality of second source electrode line is separately positioned on described
Between each pixel electrode, extended in parallel with each first source electrode line；A plurality of second gate line is separately positioned on each pixel
Between electrode, extended in parallel with each first grid polar curve；And a plurality of second capacitor line, it is adjacent with each first capacitor line
And non-parallel extension；Wherein each first grid polar curve, each first capacitor line, each first source electrode line, described each
Two grid lines, each second capacitor line and each second source electrode line are not electrically connected each other.
Optionally, when the first grid polar curve breaks, then the side and the other side of the first grid polar curve disconnected lead to
Cross a pair of of the source electrode line repairing portion being made of a part of corresponding each second source electrode line in two sides and the first grid
The adjacent second gate line mutual conduction of line.
Optionally, when the first grid polar curve and the second gate line adjacent with the first grid polar curve break,
And broken position between identical each pixel electrode when, then the side and the other side of the first grid polar curve disconnected
By a pair of of the source electrode line repairing portion being made of a part of each second source electrode line and by each second capacitor line
The capacitor line repairing portion mutual conduction that a part is constituted.
Optionally, when first source electrode line breaks, then the side and the other side of first source electrode line disconnected lead to
Cross a pair of grid lines repairing portion being made of a part of the corresponding each second gate line in two sides and first source electrode
Adjacent the second source electrode line mutual conduction of line.
Optionally, when first source electrode line and second source electrode line adjacent with first source electrode line break,
And broken position between identical each pixel electrode when, then the side and the other side of first source electrode line disconnected
By a pair of grid lines repairing portion being made of a part of each second gate line and by the one of another second source electrode line
The source electrode line repairing portion mutual conduction that part is constituted.
Optionally, when the first capacitor line breaks, then the side and the other side of the first capacitor line disconnected lead to
Cross a pair of of the source electrode line repairing portion being made of a part of corresponding each second source electrode line in two sides and the first capacitor
Adjacent the second capacitor line mutual conduction of line.
Optionally, when the first capacitor line and second capacitor line adjacent with the first capacitor line break,
And broken position between identical each pixel electrode when, then the side and the other side of the first capacitor line disconnected
By a pair of of the source electrode line repairing portion being made of a part of each second source electrode line and by each second gate line
The grid line repairing portion mutual conduction that a part is constituted.
Optionally, the area of each second source electrode line and each second capacitor line lap, at 25 μm2More than.
On the other hand, the embodiment of the present application provides a kind of display device, including active square described in any one as above
Battle array substrate.
Another aspect, application embodiment provide a kind of active array substrate, comprising:
Substrate；
Setting constitutes multiple pixel electrodes of each pixel over the substrate and at rectangular；
A plurality of first grid polar curve is separately positioned between each pixel electrode, and extends parallel to each other；
A plurality of first source electrode line is separately positioned between each pixel electrode, and edge intersects with each first grid polar curve
Direction extend；
A plurality of first capacitor line is separately positioned between each first grid polar curve, and non-parallel extension each other；
Multiple switch component is separately positioned on each each pixel electrode, is connected to each pixel electrode, described
Each first grid polar curve, each first capacitor line and each first source electrode line；
A plurality of second source electrode line is separately positioned between each pixel electrode, parallel with each first source electrode line to prolong
It stretches；
A plurality of second gate line is separately positioned between each pixel electrode, parallel with each first grid polar curve to prolong
It stretches；And
A plurality of second capacitor line, extension adjacent and non-parallel with each first capacitor line；
Wherein, each first grid polar curve, each first capacitor line, each first source electrode line, each second gate
Polar curve, each second capacitor line and each second source electrode line are not electrically connected each other, when the first grid polar curve and with
The adjacent second gate line of the first grid polar curve breaks, and broken position in identical each pixel electrode it
Between when, then the side and the other side of the first grid polar curve disconnected a part of each second source electrode line by being made of
A pair of of source electrode line repairing portion and the capacitor line repairing portion mutual conduction being made of a part of each second capacitor line, in phase
Nano metal solution is coated at mutual conducting, wherein the nano metal solution includes that organic solvent and being dispersed in described has
Metal nanoparticle in solvent；And using junction described in laser irradiation so that nano metal solution hardening with
Mutual conduction.
On the other hand, the embodiment of the present application provides a kind of defect correcting method of active array substrate, the active square
Battle array substrate, comprising: substrate；Setting constitutes multiple pixel electrodes of each pixel over the substrate and at rectangular；A plurality of
One grid line is separately positioned between each pixel electrode, and extends parallel to each other；A plurality of first source electrode line, is respectively set
Between each pixel electrode, extend along the direction intersected with each first grid polar curve；A plurality of first capacitor line, sets respectively
It sets between each first grid polar curve, and non-parallel extension each other；Multiple switch component is separately positioned on each each picture
On plain electrode, it is connected to each pixel electrode, each first grid polar curve, each first capacitor line and each first source electrode
Line；A plurality of second source electrode line is separately positioned between each pixel electrode, is extended in parallel with each first source electrode line；It is more
Second gate line, is separately positioned between each pixel electrode, extends in parallel with each first grid polar curve；And it is a plurality of
Second capacitor line, extension adjacent and non-parallel with each first capacitor line；Wherein each first grid polar curve, described each first
Capacitor line, each first source electrode line, each second gate line, each second capacitor line and each second source electrode line
It is not electrically connected each other；The defect correcting method of the active array substrate, comprising: detect the first grid polar curve and described
Two grid lines with the presence or absence of broken string burn out detection process, if only detect that the first grid polar curve has broken string, along with
By each article of the setting of broken position corresponding pixel electrode both sides of the first grid polar curve of burn out detection process detection the
In two source electrode lines, carry out cutting be more than the part of the first grid polar curve broken and more than with broken described first
The part of the adjacent second gate line of grid line is respectively formed with the first grid polar curve that has broken and described of overlapping
The source electrode line repairing portion formation process in the source electrode line repairing portion of the part of second gate line, in the first grid polar curve with broken string
In the adjacent second gate line, carries out the both sides that cutting is more than the pixel electrode along corresponding broken position and be arranged
Each second source electrode line part, form the grid line with the grid line repairing portion of part for each second source electrode line of overlapping
Repairing portion formation process, and carry out the part to overlap with the first grid polar curve in each source electrode line repairing portion and the broken string
First grid polar curve connection and the part to overlap with the second gate line in each source electrode line repairing portion and the grid line
The connection process of the connection in repairing portion.
Another aspect, the embodiment of the present application provide a kind of defect correcting method of active array substrate, the active square
Battle array substrate, comprising: substrate；Setting constitutes multiple pixel electrodes of each pixel over the substrate and at rectangular；A plurality of
One grid line is separately positioned between each pixel electrode, and extends parallel to each other；A plurality of first source electrode line, is respectively set
Between each pixel electrode, extend along the direction intersected with each first grid polar curve；A plurality of first capacitor line, sets respectively
It sets between each first grid polar curve, and non-parallel extension each other；Multiple switch component is separately positioned on each each picture
On plain electrode, it is connected to each pixel electrode, each first grid polar curve, each first capacitor line and each first source electrode
Line；A plurality of second source electrode line is separately positioned between each pixel electrode, is extended in parallel with each first source electrode line；It is more
Second gate line, is separately positioned between each pixel electrode, extends in parallel with each first grid polar curve；And it is a plurality of
Second capacitor line, extension adjacent and non-parallel with each first capacitor line；Wherein each first grid polar curve, described each first
Capacitor line, each first source electrode line, each second gate line, each second capacitor line and each second source electrode line
It is not electrically connected each other；The defect correcting method of the active array substrate, comprising: detect the first grid polar curve and described
Two grid lines are with the presence or absence of the burn out detection process of broken string, if detecting, the first grid polar curve and the second gate line all have
Broken string, and when broken position is between identical each pixel electrode, then it is detected along with by the burn out detection process
The first grid polar curve and the second gate line the setting of broken position corresponding pixel electrode both sides each item second
In source electrode line, the part that cutting is more than the first grid polar curve to have broken and the part more than second capacitor line are carried out,
It is respectively formed the source electrode line repairing portion of the part with the overlap first grid polar curve and second capacitor line that have broken
Source electrode line repairing portion formation process, in second capacitor line, carrying out cutting is more than the picture along corresponding broken position
The part of each second source electrode line of the both sides setting of plain electrode, forms the electricity with the part for each second source electrode line that overlaps
Hold the capacitor line repairing portion formation process in line repairing portion, and overlap with the first grid polar curve in each source electrode line repairing portion
Part and the first grid polar curve to have broken connection and overlap with second capacitor line in each source electrode line repairing portion
Part and capacitor line repairing portion connection connection process.
Another aspect, the embodiment of the present application provide a kind of defect correcting method of active array substrate, the active square
Battle array substrate, comprising: substrate；Setting constitutes multiple pixel electrodes of each pixel over the substrate and at rectangular；A plurality of
One grid line is separately positioned between each pixel electrode, and extends parallel to each other；A plurality of first source electrode line, is respectively set
Between each pixel electrode, extend along the direction intersected with each first grid polar curve；A plurality of first capacitor line, sets respectively
It sets between each first grid polar curve, and non-parallel extension each other；Multiple switch component is separately positioned on each each picture
On plain electrode, it is connected to each pixel electrode, each first grid polar curve, each first capacitor line and each first source electrode
Line；A plurality of second source electrode line is separately positioned between each pixel electrode, is extended in parallel with each first source electrode line；It is more
Second gate line, is separately positioned between each pixel electrode, extends in parallel with each first grid polar curve；And it is a plurality of
Second capacitor line, extension adjacent and non-parallel with each first capacitor line；Wherein each first grid polar curve, described each first
Capacitor line, each first source electrode line, each second gate line, each second capacitor line and each second source electrode line
It is not electrically connected each other；The defect correcting method of the active array substrate, comprising: detection first source electrode line and described the
Two source electrode lines with the presence or absence of broken string burn out detection process, if only detect that first source electrode line has broken string, along with
By each article of the setting of broken position corresponding pixel electrode both sides of the first source electrode line of burn out detection process detection the
In two grid lines, carry out cutting be more than the part of first source electrode line broken and more than with broken described first
The part of adjacent second source electrode line of source electrode line is respectively formed with first source electrode line that has broken and described of overlapping
The grid line repairing portion formation process in the grid line repairing portion of the part of the second source electrode line, in first source electrode line with broken string
In adjacent second source electrode line, carries out the both sides that cutting is more than the pixel electrode along corresponding broken position and be arranged
Each second gate line part, form the source electrode line with the source electrode line repairing portion of part for each second gate line of overlapping
Repairing portion formation process, and carry out the part to overlap with first source electrode line in each grid line repairing portion and the broken string
The first source electrode line connection and the part to overlap with the second gate line in each source electrode line repairing portion and the grid line
The connection process of the connection in repairing portion.
Another aspect, the embodiment of the present application provide a kind of defect correcting method of active array substrate, the active square
Battle array substrate, comprising: substrate；Setting constitutes multiple pixel electrodes of each pixel over the substrate and at rectangular；A plurality of
One grid line is separately positioned between each pixel electrode, and extends parallel to each other；A plurality of first source electrode line, is respectively set
Between each pixel electrode, extend along the direction intersected with each first grid polar curve；A plurality of first capacitor line, sets respectively
It sets between each first grid polar curve, and non-parallel extension each other；Multiple switch component is separately positioned on each each picture
On plain electrode, it is connected to each pixel electrode, each first grid polar curve, each first capacitor line and each first source electrode
Line；A plurality of second source electrode line is separately positioned between each pixel electrode, is extended in parallel with each first source electrode line；It is more
Second gate line, is separately positioned between each pixel electrode, extends in parallel with each first grid polar curve；And it is a plurality of
Second capacitor line, extension adjacent and non-parallel with each first capacitor line；Wherein each first grid polar curve, described each first
Capacitor line, each first source electrode line, each second gate line, each second capacitor line and each second source electrode line
It is not electrically connected each other；The defect correcting method of the active array substrate, comprising: detection first source electrode line and described the
Two source electrode lines are with the presence or absence of the burn out detection process of broken string, if detecting, first source electrode line and second source electrode line all have
Broken string, and when broken position is between identical each pixel electrode, then it is detected along with by the burn out detection process
First source electrode line and second source electrode line the setting of broken position corresponding pixel electrode both sides each item second
In grid line, part of the cutting more than first source electrode line to have broken is carried out and more than another second source electrode line
Part is respectively formed the grid line of the part with overlap first source electrode line and another second source electrode line that have broken
The grid line repairing portion formation process in repairing portion, in another second source electrode line, carrying out cutting is more than described along correspondence
The part of each second gate line of the both sides setting of the pixel electrode of broken position, being formed has each second grid that overlaps
The source electrode line repairing portion formation process in the source electrode line repairing portion of the part of line, and carry out with each grid line repairing portion the
Part and the connection of first source electrode line to have broken that source line overlaps and another with each grid line repairing portion
The connection process of the connection of part and source electrode line repairing portion that one second source electrode line overlaps.
Another aspect, the embodiment of the present application provide a kind of defect correcting method of active array substrate, the active square
Battle array substrate, comprising: substrate；Setting constitutes multiple pixel electrodes of each pixel over the substrate and at rectangular；A plurality of
One grid line is separately positioned between each pixel electrode, and extends parallel to each other；A plurality of first source electrode line, is respectively set
Between each pixel electrode, extend along the direction intersected with each first grid polar curve；A plurality of first capacitor line, sets respectively
It sets between each first grid polar curve, and non-parallel extension each other；Multiple switch component is separately positioned on each each picture
On plain electrode, it is connected to each pixel electrode, each first grid polar curve, each first capacitor line and each first source electrode
Line；A plurality of second source electrode line is separately positioned between each pixel electrode, is extended in parallel with each first source electrode line；It is more
Second gate line, is separately positioned between each pixel electrode, extends in parallel with each first grid polar curve；And it is a plurality of
Second capacitor line, extension adjacent and non-parallel with each first capacitor line；Wherein each first grid polar curve, described each first
Capacitor line, each first source electrode line, each second gate line, each second capacitor line and each second source electrode line
It is not electrically connected each other；The defect correcting method of the active array substrate, comprising: detect the first capacitor line and described
Two capacitor lines with the presence or absence of broken string burn out detection process, if only detect that the first capacitor line has broken string, along with
By each article of the setting of broken position corresponding pixel electrode both sides of the first capacitor line of burn out detection process detection the
In two source electrode lines, carry out cutting be more than the part of the first capacitor line broken and more than with broken described first
The part of adjacent second capacitor line of capacitor line is respectively formed with the first capacitor line that has broken and described of overlapping
The source electrode line repairing portion formation process in the source electrode line repairing portion of the part of the second capacitor line, in the first capacitor line with broken string
In adjacent second capacitor line, carries out the both sides that cutting is more than the pixel electrode along corresponding broken position and be arranged
Each second source electrode line part, form the capacitor line with the capacitor line repairing portion of part for each second source electrode line of overlapping
Repairing portion formation process, and carry out the part to overlap with the first capacitor line in each source electrode line repairing portion and the broken string
First capacitor line connection and the part to overlap with second source electrode line in capacitor line repairing portion and each source electrode line
The connection process of the connection in repairing portion.
Another aspect, the embodiment of the present application provide a kind of defect correcting method of active array substrate, the active square
Battle array substrate, comprising: substrate；Setting constitutes multiple pixel electrodes of each pixel over the substrate and at rectangular；A plurality of
One grid line is separately positioned between each pixel electrode, and extends parallel to each other；A plurality of first source electrode line, is respectively set
Between each pixel electrode, extend along the direction intersected with each first grid polar curve；A plurality of first capacitor line, sets respectively
It sets between each first grid polar curve, and non-parallel extension each other；Multiple switch component is separately positioned on each each picture
On plain electrode, it is connected to each pixel electrode, each first grid polar curve, each first capacitor line and each first source electrode
Line；A plurality of second source electrode line is separately positioned between each pixel electrode, is extended in parallel with each first source electrode line；It is more
Second gate line, is separately positioned between each pixel electrode, extends in parallel with each first grid polar curve；And it is a plurality of
Second capacitor line, extension adjacent and non-parallel with each first capacitor line；Wherein each first grid polar curve, described each first
Capacitor line, each first source electrode line, each second gate line, each second capacitor line and each second source electrode line
It is not electrically connected each other；The defect correcting method of the active array substrate, comprising: detect the first capacitor line and described
Two capacitor lines are with the presence or absence of the burn out detection process of broken string, if detecting, the first capacitor line and second capacitor line all have
Broken string, and when broken position is between identical each pixel electrode, then it is detected along with by the burn out detection process
The first capacitor line and second capacitor line the setting of broken position corresponding pixel electrode both sides each item second
In source electrode line, the part that cutting is more than the first capacitor line to have broken and the part more than the second gate line are carried out,
It is respectively formed the source electrode line repairing portion of the part with overlap the first capacitor line and the second gate line that have broken
Source electrode line repairing portion formation process, in the second gate line, carrying out cutting is more than the picture along corresponding broken position
The part of each second source electrode line of the both sides setting of plain electrode, forms the grid with the part for each second source electrode line that overlaps
The grid line repairing portion formation process in polar curve repairing portion, and overlap with the first capacitor line in each source electrode line repairing portion
Part and the first capacitor line to have broken connection and each second source electrode line with grid line repairing portion
The connection process of the connection of the part of overlapping and each source electrode line repairing portion.
Optionally, the cutting and connection are carried out by laser irradiation.
Optionally, it is coated with nano metal solution in the junction, wherein the nano metal solution includes organic solvent
And it is dispersed in the metal nanoparticle in the organic solvent；And using junction described in laser irradiation, so that institute
Nano metal solution hardening is stated to form interconnecting piece.
Based on above-mentioned, this application provides the active array substrate that can repair broken string, Lai Tigao liquid crystal display
Manufacture qualification rate.In addition, the application is coated with nano-metal particle in the junction in repairing portion, and using laser irradiation program so that
Nano metal solution hardening is obtained so that each repairing portion is connected.Furthermore because grid line and capacitor line are independently constituted, reduce grid line
Load, the signal delay in grid line can be improved.
Detailed description of the invention
Technical solution in ord to more clearly illustrate embodiments of the present application, below will be to needed in embodiment description
Attached drawing is briefly described, it should be apparent that, the accompanying drawings in the following description is some embodiments of the present application, general for this field
For logical technical staff, without creative efforts, it is also possible to obtain other drawings based on these drawings.
Fig. 1 is a kind of plan view at active matrix village bottom in one embodiment of the application.
Fig. 2 is a kind of revised plan view of first grid polar curve broken string of active array substrate in one embodiment of the application.
Fig. 3 breaks for the first grid polar curve and second gate line of active array substrate a kind of in one embodiment of the application to be repaired
Plan view after just.
Fig. 4 is a kind of revised plan view of the first source electrode line broken string of active array substrate in one embodiment of the application.
Fig. 5 is that a kind of the first source electrode line of active array substrate and the second source electrode line break and repair in one embodiment of the application
Plan view after just.
Fig. 6 is a kind of revised plan view of first capacitor line broken string of active array substrate in one embodiment of the application.
Fig. 7 is that a kind of first capacitor line of active array substrate and the second capacitor line break and repair in one embodiment of the application
Plan view after just.
Fig. 8 is the plan view for indicating a pixel of existing active array substrate.
Specific embodiment
Below in conjunction with the attached drawing in the embodiment of the present application, technical solutions in the embodiments of the present application carries out clear, complete
Site preparation description.Obviously, described embodiment is some embodiments of the present application, instead of all the embodiments.Based on this Shen
Please in embodiment, every other implementation obtained by those of ordinary skill in the art without making creative efforts
Example, shall fall in the protection scope of this application.
Fig. 1 is a kind of plan view at active matrix village bottom in one embodiment of the application, referring to Fig. 1, active array substrate,
It include: substrate；Setting on substrate and at rectangular, constitute each pixel multiple pixel electrodes 11,12,13,14,15,16,
17,18,19, a plurality of first grid polar curve 21,23, be separately positioned on each pixel electrode 11,12,13,14,15,16,17,18,19 it
Between, such as first grid polar curve 21 is arranged between pixel electrode 11,12,13 and pixel electrode 14,15,16, and a plurality of first grid
Polar curve 21,23 extends parallel to each other, to export scanning signal.A plurality of first source electrode line 31,33 is separately positioned on each pixel electricity
Between pole 11,12,13,14,15,16,17,18,19, such as the first source electrode line 31 is arranged in pixel electrode 11,14,17 and pixel
Between electrode 13,16,19, extend along the direction intersected with each first grid polar curve 21,23, to outputting data signals.A plurality of
One capacitor line 41 is separately positioned between each first grid polar curve 21,23, and the non-parallel extension each other of a plurality of first capacitor line 41,
To output capacitance signal.Multiple switch component 51,52,53 is separately positioned on each pixel electrode 11,12,13, and connection is each
Pixel electrode 11,12,13, each first grid polar curve 21, above-mentioned each first capacitor line 41 and each first source electrode line 31,33.It is a plurality of
Second source electrode line 32,34 is separately positioned between each pixel electrode 11,12,13,14,15,16,17,18,19, with each first source
Polar curve 31,33 extends in parallel, for example, the setting of the second source electrode line 32 pixel electrode 11,14,17 and pixel electrode 13,16,19 it
Between, it is extended in parallel with the first source electrode line 31, is used as the purposes of patch cord.A plurality of second gate line 22,24, is separately positioned on each picture
Between plain electrode 11,12,13,14,15,16,17,18,19, extended in parallel with each first grid polar curve 21,23, such as second grid
Line 22 is arranged between pixel electrode 11,12,13 and pixel electrode 14,15,16, extends in parallel, is used as with first grid polar curve 21
The purposes of patch cord.And a plurality of second capacitor line 42, extension adjacent and non-parallel with each first capacitor line 41, and each first grid
Polar curve 21,23, each first capacitor line 41, each first source electrode line 31,33, each second gate line 22,24, each second capacitor line 42 with
And each second source electrode line 32,34 is not electrically connected each other.
Fig. 2 is a kind of revised plan view of first grid polar curve broken string of active array substrate in one embodiment of the application,
Referring to Fig. 2, if when first grid polar curve 21 has broken string (such as broken position 1), the defect correcting method of active array substrate,
It include: the burn out detection process (appearance known to such as detecting first grid polar curve 21 and second gate line 22 with the presence or absence of broken string
Inspection and electrooptics inspection), if only detect that first grid polar curve 21 has broken string, detected along with by burn out detection process
First grid polar curve 21 corresponding 11 both sides of pixel electrode of broken position 1 setting the second source electrode line 32,34 in, cut
Disconnected (such as being carried out by laser irradiation) is more than cut-off parts C1, C4 of first grid polar curve 21 and is more than and 21 phase of first grid polar curve
Cut-off parts C2, C3 of adjacent second gate line 22 are respectively formed first grid polar curve 21 and second grid with the broken string that overlaps
The source electrode line repairing portion formation process of source electrode line repairing portion 32P, 34P of overlapping part R1, R2, R3, R4 of line 22.Then, exist
In the above-mentioned second gate line 22 adjacent with the first grid polar curve 21 of broken string, carrying out cutting is more than along corresponding broken position 1
Cut-off parts C5, C6 of second source electrode line 32,34 of the both sides setting of pixel electrode 11, being formed has second source electrode line that overlaps
32, the grid line repairing portion formation process of the grid line repairing portion 22P of 34 overlapping part R2, R3, and carry out each source electrode line
The connection of overlapping part R1, R4 of repairing portion 32P, 34P and first grid polar curve 21 and each source electrode line repairing portion 32P, 34P with
The connection process of the connection process of the connection of grid line repairing portion 22P overlapping part R2, R3, the application can be molten by laser irradiation
The mode connect connects, in addition also can in junction (such as: at R1, R4, R2, R3) the coating nano-metal particle in repairing portion, and
And using laser irradiation program so that nano metal solution hardening is to be connected each repairing portion.
Therefore, by the above method, then scanning signal (arrow in figure) can be made to repair along first grid polar curve 21, source electrode line
Portion 32P, grid line repairing portion 22P, source electrode line repairing portion 34P are finally passed back to first grid polar curve 21 again, keep scanning signal suitable
Benefit is transmitted to downstream part, so improving the manufacture qualification rate of liquid crystal display.
Fig. 3 breaks for the first grid polar curve and second gate line of active array substrate a kind of in one embodiment of the application to be repaired
Plan view after just, referring to Fig. 3, if when first grid polar curve 21 and second gate line 22 all have broken string (such as broken position 1,
2), the then defect correcting method of active array substrate, comprising: detection first grid polar curve 21 and second gate line 22 are with the presence or absence of disconnected
The burn out detection process (such as known visual examination and electrooptics inspection) of line, if detecting first grid polar curve 21 and second
Grid line 22 all has broken string, and when broken position 1,2 is between pixel electrode 11 and pixel electrode 14, then along with by breaking
The first grid polar curve 21 and the broken position 1 of second gate line 22,2 corresponding 11 both sides of pixel electrode of detection process detection are set
In the second source electrode line 32,34 set, cut-off parts C7, the C12 of cutting more than first grid polar curve 21 are carried out and more than the second capacitor
Cut-off parts C9, C10 of line 42, be respectively formed overlapping part R1 with overlapping first grid polar curve 21 and the second capacitor line 42,
The source electrode line repairing portion formation process of source electrode line repairing portion 32P, 34P of R5, R4, R6, then, in the second capacitor line 42, into
Row cutting (such as being carried out by laser irradiation) is more than the cutting portion for the second source electrode line 32,34 that the both sides of pixel electrode 11 are arranged
Divide C8, C11, forms the capacitor with the capacitor line repairing portion 42P of overlapping part R5, R6 for each second source electrode line 32,34 that overlaps
Line repairing portion formation process, and carry out the company of each source electrode line repairing portion 32P, 34P and first grid polar curve 21 overlapping part R1, R4
It connects and connection process that each source electrode line repairing portion 32P, 34P is connect with capacitor line repairing portion 42P overlapping part R5, R6, this
The connection process of application can be connected by way of laser irradiation welding, in addition also can repairing portion junction (such as: R1,
At R5, R4, R6) coating nano-metal particle, and using laser irradiation program so that nano metal solution hardening is to be connected
Each repairing portion.
Therefore, by the above method, then scanning signal (arrow in figure) can be made to repair along first grid polar curve 21, source electrode line
Portion 32P, capacitor line repairing portion 42P, source electrode line repairing portion 34P, it is last to be passed back to first grid polar curve 21 again, keep scanning signal suitable
Benefit is transmitted to downstream part, so improving the manufacture qualification rate of liquid crystal display.
Fig. 4 is a kind of revised plan view of the first source electrode line broken string of active array substrate in one embodiment of the application,
Referring to Fig. 4, if when the first source electrode line 31 has broken string (such as broken position 3), the defect correcting method of active array substrate,
It include: to detect the first source electrode line 31 and the second source electrode line 32 with the presence or absence of the burn out detection process of broken string, if only detecting first
When source electrode line 31 has broken string, then along picture corresponding with the broken position 3 of the first source electrode line 31 detected by burn out detection process
In each second gate line 22,24 of plain 11 both sides of electrode setting, cut-off parts of the cutting more than the first source electrode line 31 are carried out
Cut-off parts C5, C13 of C15, C16 and second source electrode line 32 adjacent more than with the first source electrode line 31, being respectively formed has weight
Grid line repairing portion 22P, 24P of overlapping part R2, R7, R8, R9 of the first source electrode line 31 and the second source electrode line 32 that repeatedly break
Grid line repairing portion formation process then in second source electrode line 32 adjacent with the first source electrode line 31 of broken string, cut
Disconnected is more than cut-off parts C2, C14 for each second gate line 22,24 being arranged in the both sides of pixel electrode 11, and being formed has weight
The repeatedly source electrode line repairing portion formation process of the source electrode line repairing portion 32P of overlapping part R2, R8 of each second gate line 22,24, with
And carry out connection and the source electrode line of the first source electrode line 31 overlapping part R7, R9 of each grid line repairing portion 22P, 24P and broken string
The connection process that repairing portion 32P is connect with grid line repairing portion 22P, 24P overlapping part R2, R8, the connection process of the application
It can be connected by way of laser irradiation welding, it in addition also can be in junction (such as: at R2, R7, the R8, R9) coating in repairing portion
Nano-metal particle, and using laser irradiation program so that nano metal solution hardening is to be connected each repairing portion.
Therefore, by the above method, then data-signal (arrow in figure) can be made to repair along the first source electrode line 31, grid line
Portion 22P, source electrode line repairing portion 32P, grid line repairing portion 24P, it is last to be passed back to the first source electrode line 31 again, keep data-signal suitable
Benefit is transmitted to downstream part, so improving the manufacture qualification rate of liquid crystal display.
Fig. 5 is that a kind of the first source electrode line of active array substrate and the second source electrode line break and repair in one embodiment of the application
Plan view after just, referring to Fig. 5, if when the first source electrode line 31 and the second source electrode line 32 all have broken string (such as broken position 3,
4), the then defect correcting method of active array substrate, comprising: the first source electrode line 31 of detection and the second source electrode line 32 are with the presence or absence of disconnected
The burn out detection process of line, if detecting, the first source electrode line 31 and the second source electrode line 32 all have a broken string, and broken position 3,4 in
When between identical pixel electrode 11 and pixel electrode 13, then along with the first source electrode line 31 detected by burn out detection process and
In the broken position 3 of second source electrode line 32, the second gate line 22,24 of 4 corresponding 11 both sides of pixel electrode settings, cut
It is disconnected more than cut-off parts C1, C6 of the first source electrode line 31 and be more than that another second source electrode line 34(can be and the first source electrode line 31 the
Two close source electrode lines) cut-off parts C3, C4, be respectively formed with overlap broken string the first source electrode line 31 and another second source
The grid line repairing portion formation process of grid line repairing portion 22P, 24P of overlapping part R1, R2, R3, R4 of polar curve 34, then,
In another second source electrode line 34, each second gate line 22,24 that the both sides that cutting is more than pixel electrode 11 are arranged is carried out
Cut-off parts C2, C5 form the source electrode line repairing portion 34P's with overlapping part R2, R3 of each second gate line 22,24 that overlaps
Source electrode line repairing portion formation process, and carry out each grid line repairing portion 22P, 24P and the first source electrode line 31 overlapping part R1, R4
Connection and the connection process that is connect with source electrode line repairing portion 34P overlapping part of each grid line repairing portion 22P, 24P.This
The connection process of application can be connected by way of laser irradiation welding, in addition also can repairing portion junction (such as: R1,
At R2, R3, R4) coating nano-metal particle, and using laser irradiation program so that nano metal solution hardening is to be connected
Each repairing portion.
Therefore, by the above method, then data-signal (arrow in figure) can be made to repair along the first source electrode line 31, grid line
Portion 22P, source electrode line repairing portion 34P, grid line repairing portion 24P, it is last to be passed back to the first source electrode line 31 again, keep data-signal suitable
Benefit is transmitted to downstream part, so improving the manufacture qualification rate of liquid crystal display.
Fig. 6 is a kind of revised plan view of first capacitor line broken string of active array substrate in one embodiment of the application,
Referring to Fig. 6, if when first capacitor line 41 has broken string (such as broken position 5), the defect correcting method of active array substrate,
It include: to detect first capacitor line 41 and the second capacitor line 42 with the presence or absence of the burn out detection process of broken string, if only detecting first
When capacitor line 41 has broken string, then along picture corresponding with the broken position 5 of first capacitor line 41 detected by burn out detection process
In the second source electrode line of each item 32,34 of plain 11 both sides of electrode setting, the cut-off parts that cutting is more than first capacitor line 41 are carried out
Cut-off parts C9, C10 of C7, C12 and second capacitor line 42 adjacent more than with first capacitor line 41, being respectively formed has weight
The repeatedly source electrode of source electrode line repairing portion 32P, 34P of overlapping part R1, R5, R4, R6 of first capacitor line 41 and the second capacitor line 42
Line repairing portion formation process, then, in second capacitor line 42 adjacent with the first capacitor line 41 of broken string, carrying out cutting is more than
Cut-off parts C8, C11 of each second source electrode line 32,34 of the both sides setting of pixel electrode 11, then, being formed has overlapping each
The capacitor line repairing portion formation process of the capacitor line repairing portion 42P of overlapping part R5, R6 of second source electrode line 32,34, Yi Jijin
Connection and the capacitor line repairing portion 42P of row each source electrode line repairing portion 32P, 34P and first capacitor line 41 overlapping part R1, R4
The connection process being connect with each source electrode line repairing portion 32P, 34P overlapping part R5, R6.The connection process of the application can be by swashing
The mode of light irradiation welding connects, and in addition also can be coated with nano metal in the junction (such as: R1, R5, R4, R6 at) in repairing portion
Particle, and using laser irradiation program so that nano metal solution hardening is to be connected each repairing portion.
Therefore, by the above method, then capacitance signal (arrow in figure) can be made to repair along first capacitor line 41, source electrode line
Portion 32P, capacitor line repairing portion 42P, source electrode line repairing portion 34P, it is last to be passed back to first capacitor line 41 again, keep capacitance signal suitable
Benefit is transmitted to downstream part, so improving the manufacture qualification rate of liquid crystal display.
Fig. 7 is that a kind of first capacitor line of active array substrate and the second capacitor line break and repair in one embodiment of the application
Plan view after just, referring to Fig. 7, if when first capacitor line 41 and the second capacitor line 42 all have broken string (such as broken position 5,
6), the then defect correcting method of active array substrate, comprising: detection first capacitor line 41 and the second capacitor line 42 are with the presence or absence of disconnected
The burn out detection process of line, if detecting, first capacitor line 41 and the second capacitor line 42 all have a broken string, and broken position 5,6 in
When identical pixel electrode 11, then along disconnected with the first capacitor line 41 detected by burn out detection process and the second capacitor line 42
In the second source electrode line of each item 32,34 that line position 5,6 corresponding 11 both sides of pixel electrode are arranged, carrying out cutting is more than broken string
Cut-off parts C1, C4 of first capacitor line 41 and cut-off parts C2, C3 more than second gate line 22, being respectively formed has weight
The repeatedly source electrode of source electrode line repairing portion 32P, 34P of overlapping part R1, R2, R3, R4 of first capacitor line 41 and second gate line 22
Line repairing portion formation process, then, in second gate line 22, carrying out cutting is more than to be arranged in the both sides of pixel electrode 11
Cut-off parts C5, C6 of each second source electrode line 32,34 form overlapping part R2, the R3 with each second source electrode line 32,34 that overlaps
Grid line repairing portion 22P grid line repairing portion formation process, and to carry out each source electrode line repairing portion 32P, 34P and first electric
The connection of appearance line 41 overlapping part R1, R4 and grid line repairing portion 22P and each source electrode line repairing portion 32P, 34P overlapping part
The connection process of the connection of R2, R3.The connection process of the application can be connected by way of laser irradiation welding, in addition also can be
Junction (such as: at R1, R2, R3, R4) the coating nano-metal particle in repairing portion, and using laser irradiation program so that
Nano metal solution is hardened so that each repairing portion is connected.
Therefore, by the above method, then capacitance signal (arrow in figure) can be made to repair along first capacitor line 41, source electrode line
Portion 32P, grid line repairing portion 22P, source electrode line repairing portion 34P, it is last to be passed back to first capacitor line 41 again, keep capacitance signal suitable
Benefit is transmitted to downstream part, so improving the manufacture qualification rate of liquid crystal display.
In the respective embodiments described above, the area of each lap R1, R2, R3, R4, R5, R6, R7, R8, R9 are 25 μm2With
On.
In the respective embodiments described above, the active array substrate constituted in this way is suitable for liquid crystal display device, OLED display dress
It sets, QLED display device, curved-surface display device or other display devices, it is not limited here.
In the respective embodiments described above, the defect correcting method of the active array substrate constituted in this way is suitable for liquid crystal display
The manufacturing method of device.
Based on above-mentioned, this application provides the active array substrate that can repair broken string, Lai Tigao liquid crystal display
Manufacture qualification rate.In addition, the application is coated with nano-metal particle in the junction in repairing portion, and using laser irradiation program so that
Nano metal solution hardening is obtained so that each repairing portion is connected.Furthermore because grid line and capacitor line are independently constituted, reduce grid line
Load, the signal delay in grid line can be improved.
It should be noted that in the above-described embodiments, all emphasizing particularly on different fields to the description of each embodiment, in some embodiment
The part being not described in, reference can be made to the related descriptions of other embodiments.
The above, the only specific embodiment of the application, but the protection scope of the application is not limited thereto, it is any
Those familiar with the art within the technical scope of the present application, can readily occur in various equivalent modifications or replace
It changes, these modifications or substitutions should all cover within the scope of protection of this application.Therefore, the protection scope of the application should be with right
It is required that protection scope subject to.
Claims (10)
1. a kind of active array substrate characterized by comprising
Substrate；
Setting constitutes multiple pixel electrodes of each pixel over the substrate and at rectangular；
A plurality of first grid polar curve is separately positioned between each pixel electrode, and extends parallel to each other；
A plurality of first source electrode line is separately positioned between each pixel electrode, along the side intersected with each first grid polar curve
To extension；
A plurality of first capacitor line is separately positioned between each first grid polar curve, and non-parallel extension each other；
Multiple switch component is separately positioned on each each pixel electrode, is connected to each pixel electrode, described each
One grid line, each first capacitor line and each first source electrode line；
A plurality of second source electrode line is separately positioned between each pixel electrode, is extended in parallel with each first source electrode line；
A plurality of second gate line is separately positioned between each pixel electrode, is extended in parallel with each first grid polar curve；With
And
A plurality of second capacitor line, extension adjacent and non-parallel with each first capacitor line；
Wherein, each first grid polar curve, each first capacitor line, each first source electrode line, each second gate line,
Each second capacitor line and each second source electrode line are not electrically connected each other.
2. active array substrate as described in claim 1, which is characterized in that when first grid polar curve broken string, then disconnect
The first grid polar curve side and the other side, by being made of a part of corresponding each second source electrode line in two sides
A pair of of source electrode line repairing portion second gate line mutual conduction adjacent with the first grid polar curve.
3. active array substrate as described in claim 1, which is characterized in that when the first grid polar curve and with the first grid
The adjacent second gate line of polar curve breaks, and when broken position is between identical each pixel electrode, then breaks
The side and the other side for the first grid polar curve opened pass through a pair of of source electrode for being made of a part of each second source electrode line
Line repairing portion and the capacitor line repairing portion mutual conduction being made of a part of each second capacitor line.
4. active array substrate as described in claim 1, which is characterized in that when first source electrode line broken string, then disconnect
First source electrode line side and the other side, by being made of a part of the corresponding each second gate line in two sides
A pair of grid lines repairing portion second source electrode line mutual conduction adjacent with first source electrode line.
5. active array substrate as described in claim 1, which is characterized in that when first source electrode line and with first source
Adjacent second source electrode line of polar curve breaks, and when broken position is between identical each pixel electrode, then breaks
The side and the other side for first source electrode line opened pass through a pair of of grid for being made of a part of each second gate line
Line repairing portion and the source electrode line repairing portion mutual conduction being made of a part of another second source electrode line.
6. active array substrate as described in claim 1, which is characterized in that when first capacitor line broken string, then disconnect
The first capacitor line side and the other side, by being made of a part of corresponding each second source electrode line in two sides
A pair of of source electrode line repairing portion second capacitor line mutual conduction adjacent with the first capacitor line.
7. active array substrate as described in claim 1, which is characterized in that when the first capacitor line and with it is described first electricity
Hold adjacent second capacitor line of line to break, and when broken position is between identical each pixel electrode, then breaks
The side and the other side for the first capacitor line opened pass through a pair of of source electrode for being made of a part of each second source electrode line
Line repairing portion and the grid line repairing portion mutual conduction being made of a part of each second gate line.
8. active array substrate as described in claim 1, which is characterized in that each second source electrode line and each second electricity
The area for holding line overlap part, at 25 μm2More than.
9. a kind of display device, it is characterised in that: including active array substrate described in claim 1 to 8 any one.
10. a kind of active array substrate characterized by comprising
Substrate；
Setting constitutes multiple pixel electrodes of each pixel over the substrate and at rectangular；
A plurality of first grid polar curve is separately positioned between each pixel electrode, and extends parallel to each other；
A plurality of first source electrode line is separately positioned between each pixel electrode, along the side intersected with each first grid polar curve
To extension；
A plurality of first capacitor line is separately positioned between each first grid polar curve, and non-parallel extension each other；
Multiple switch component is separately positioned on each each pixel electrode, is connected to each pixel electrode, described each
One grid line, each first capacitor line and each first source electrode line；
A plurality of second source electrode line is separately positioned between each pixel electrode, is extended in parallel with each first source electrode line；
A plurality of second gate line is separately positioned between each pixel electrode, is extended in parallel with each first grid polar curve；With
And
A plurality of second capacitor line, extension adjacent and non-parallel with each first capacitor line；
Wherein, each first grid polar curve, each first capacitor line, each first source electrode line, each second gate line,
Each second capacitor line and each second source electrode line are not electrically connected each other, when the first grid polar curve and with described
The adjacent second gate line of one grid line breaks, and when broken position is between identical each pixel electrode,
The side and the other side of the first grid polar curve then disconnected pass through a pair for being made of a part of each second source electrode line
Source electrode line repairing portion and the capacitor line repairing portion mutual conduction being made of a part of each second capacitor line, in phase mutual conductance
Logical place's coating nano metal solution, wherein the nano metal solution includes organic solvent and is dispersed in described organic molten
Metal nanoparticle in agent；And using junction described in laser irradiation, so that nano metal solution hardening is with mutual
Conducting.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710741947.1A CN107589603B (en) | 2017-08-25 | 2017-08-25 | Active matrix substrate and display device |
| PCT/CN2017/111114 WO2019037289A1 (en) | 2017-08-25 | 2017-11-15 | Active matrix substrate and display apparatus |
| US16/641,086 US11112664B2 (en) | 2017-08-25 | 2017-11-15 | Active matrix substrate and display apparatus |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710741947.1A CN107589603B (en) | 2017-08-25 | 2017-08-25 | Active matrix substrate and display device |
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| CN107589603A CN107589603A (en) | 2018-01-16 |
| CN107589603B true CN107589603B (en) | 2019-08-23 |
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| US (1) | US11112664B2 (en) |
| CN (1) | CN107589603B (en) |
| WO (1) | WO2019037289A1 (en) |
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| CN107589604A (en) * | 2017-08-25 | 2018-01-16 | 惠科股份有限公司 | Defect correction method of active matrix substrate and manufacturing method of display device |
| CN109192700A (en) * | 2018-10-15 | 2019-01-11 | 深圳市华星光电半导体显示技术有限公司 | A kind of broken wire repair method of tft array substrate |
| KR102675457B1 (en) * | 2020-10-21 | 2024-06-13 | 엘지디스플레이 주식회사 | Display device |
| US20220130299A1 (en) * | 2020-10-23 | 2022-04-28 | Innolux Corporation | Electronic device |
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| KR101090253B1 (en) * | 2004-10-06 | 2011-12-06 | 삼성전자주식회사 | Thin film transistor array panel and liquid crystal display including the same |
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| CN102360146A (en) * | 2011-10-14 | 2012-02-22 | 深圳市华星光电技术有限公司 | TFT-LCD (thin film transistor-liquid crystal display) array base plate and manufacturing method thereof |
| CN107589604A (en) * | 2017-08-25 | 2018-01-16 | 惠科股份有限公司 | Defect correction method of active matrix substrate and manufacturing method of display device |
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2017
- 2017-08-25 CN CN201710741947.1A patent/CN107589603B/en active Active
- 2017-11-15 US US16/641,086 patent/US11112664B2/en active Active
- 2017-11-15 WO PCT/CN2017/111114 patent/WO2019037289A1/en active Application Filing
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| CN101243481A (en) * | 2005-09-22 | 2008-08-13 | 夏普株式会社 | Active matrix substrate, display, television set, method for producing active matrix substrate, and method for manufacturing display |
| CN101299124A (en) * | 2008-06-25 | 2008-11-05 | 昆山龙腾光电有限公司 | Array substrates of LCD devices |
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| US20200183237A1 (en) | 2020-06-11 |
| CN107589603A (en) | 2018-01-16 |
| WO2019037289A1 (en) | 2019-02-28 |
| US11112664B2 (en) | 2021-09-07 |
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