CN107589601A - A kind of liquid crystal display panel and its control method - Google Patents

A kind of liquid crystal display panel and its control method Download PDF

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Publication number
CN107589601A
CN107589601A CN201710896773.6A CN201710896773A CN107589601A CN 107589601 A CN107589601 A CN 107589601A CN 201710896773 A CN201710896773 A CN 201710896773A CN 107589601 A CN107589601 A CN 107589601A
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China
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public electrode
liquid crystal
tft
display panel
electrode
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CN201710896773.6A
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CN107589601B (en
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杨峰
杨一峰
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TCL Huaxing Photoelectric Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Abstract

The present invention, which provides a kind of liquid crystal display panel and its control method, the liquid crystal display panel, to be included:Upper substrate, infrabasal plate, liquid crystal layer;Liquid crystal layer is sealed between upper substrate and infrabasal plate;Infrabasal plate includes TFT substrate, thin film transistor (TFT), pixel electrode successively from the bottom to top;The surface of upper substrate is provided with the first public electrode and the second public electrode, wherein, the first public electrode is relative with thin film transistor (TFT), and the second public electrode is relative with the pixel electrode, and the grid of the first public electrode and thin film transistor (TFT) has same potential.Liquid crystal display panel provided by the invention and its control method, the liquid crystal molecule of liquid crystal display panel gate edge can be controlled to occur without light leak.

Description

A kind of liquid crystal display panel and its control method
Technical field
The present invention relates to technical field of liquid crystal display, more particularly to a kind of liquid crystal display panel and its control method.
Background technology
When VA (vertical orientating type) display panel powers up, the liquid crystal molecule between the upper substrate and infrabasal plate of VA display panels It can arrange and rotate in vertical electric field direction, the rotation size of liquid crystal molecule is adjusted by the voltage between upper substrate and infrabasal plate, And then the backlight penetrance of display panel is controlled, to reach the control of L0~L255 differences gray-scale intensity.But VA display panels exist During the low GTG such as L0 (i.e. black rank), pixel electrode no-voltage, display panel is light tight, but the grid of thin film transistor (TFT) (TFT) Still in energization, thus occur that raster data model produces electric field, control liquid crystal rotation, backlight can be gone out by gate edge The situation of existing light leak.In order to solve the situation of light leak, a BM (Black Matrix, black matrix") can be increased on upper substrate Processing procedure carries out shading, so as to which VA display panels are in low GTGs such as L0, its edge will not light leak, but BM processing procedures can influence to show Dark-state performance of the panel in low GTGs such as L0.
The content of the invention
In order to solve the above technical problems, the present invention provides a kind of liquid crystal display panel and its control method, liquid can be controlled The liquid crystal molecule of LCD panel gate edge occurs without light leak.
A kind of liquid crystal display panel provided by the invention, including:Upper substrate, infrabasal plate, liquid crystal layer;
The liquid crystal layer is sealed between the upper substrate and the infrabasal plate;
The infrabasal plate includes TFT substrate, thin film transistor (TFT), pixel electrode successively from the bottom to top;
The surface of the upper substrate is provided with the first public electrode and the second public electrode, wherein, described first is public Electrode is relative with the thin film transistor (TFT), and second public electrode is relative with the pixel electrode, and first common electrical Pole and the grid of the thin film transistor (TFT) have same potential.
Preferably, the distance between first public electrode and second public electrode scope are 2~4 microns;
The projection of first public electrode and second public electrode on the infrabasal plate and the pixel electrode The distance between scope be 2~4 microns, and projection of first public electrode on the infrabasal plate and the pixel electricity It is extremely misaligned..
Preferably, the current potential of first public electrode is to make itself and institute according to the fixed frequency of grid voltage to control Stating grid has same potential.
Preferably, the infrabasal plate also includes the chromatic filter layer above the thin film transistor (TFT), in the film The first passivation layer is provided between chromatic filter layer described in transistor AND gate, the second passivation is provided with the chromatic filter layer Layer, the pixel electrode are located above second passivation layer;
The thin film transistor (TFT) includes successively from the bottom to top:Grid, insulating barrier, amorphous silicon layer, semiconductor conducting layer, it is described Also include source electrode and drain electrode on semiconductor conducting layer.
Preferably, the TFT substrate and the upper substrate are glass plate;
First public electrode, second public electrode and the pixel electrode are transparent conductive semiconductor film Material is made.
Preferably, several controlling grid scan lines and several data wires, several described grids are additionally provided with above the TFT substrate Scan line and several described data wires insulate up and down to interlock, and marks the pixel region of array arrangement, corresponding to each pixel region The red, green, blue color filter unit lower end of the chromatic filter layer is correspondingly arranged on a thin film transistor (TFT).
Preferably, it is provided with cylindrical spacer above second passivation layer.
Preferably, the line width of first public electrode is more than at least 3 microns of the line width of the grid.
The present invention also provides a kind of liquid crystal display panel control method, comprises the steps:
One upper substrate is provided, the first public electrode and the second public electrode are prepared on the surface of the upper substrate;
One TFT substrate is provided, thin film transistor (TFT) is prepared in the TFT substrate, is prepared on the thin film transistor (TFT) color Color filtering optical layer, pixel electrode is prepared on the chromatic filter layer, form infrabasal plate;
Liquid crystal layer is sealed up for safekeeping between the upper substrate and the infrabasal plate, obtains liquid crystal display panel, and is described first The grid of public electrode and the thin film transistor (TFT) provides same potential.
Preferably, it is described that on the surface of the upper substrate, the first public electrode and the second public electrode are set, specifically include:
Transparent conductive semiconductor thin-film material is plated in the upper substrate surface;
Photoresist is coated with the transparent conductive semiconductor thin-film material surface;
The transparent conductive semiconductor thin-film material surface is exposed, developed and etching process, obtains described first Public electrode and second public electrode.
Implement the present invention, have the advantages that:By preparing the first public electrode and second public on upper substrate Electrode, the first public electrode is relative with thin film transistor (TFT), and has phase between the first public electrode and the grid of thin film transistor (TFT) Same current potential, the liquid crystal molecule for controlling liquid crystal display panel gate edge are located at the direction of vertical upper substrate and infrabasal plate, no Deflect, prevent that light leak occurs in the liquid crystal molecule of gate edge in L0 gray scale states.Reduce one of BM processing procedure, increase The graphic definition processing procedure of one of public electrode, therefore do not interfere with dark-state performance of the display panel in the low GTGs of L0 yet.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing There is the required accompanying drawing used in technology description to be briefly described, it should be apparent that, drawings in the following description are only this Some embodiments of invention, for those of ordinary skill in the art, on the premise of not paying creative work, can be with Other accompanying drawings are obtained according to these accompanying drawings.
Fig. 1 is the structure chart of liquid crystal display panel provided by the invention.
Fig. 2 is the structure chart of thin film transistor (TFT) provided by the invention.
Embodiment
The present invention provides a kind of liquid crystal display panel, as shown in figure 1, the liquid crystal display panel includes:Upper substrate 1, lower base Plate, liquid crystal layer 3.
Liquid crystal layer 3 is sealed between upper substrate 1 and infrabasal plate.
Infrabasal plate includes TFT (Thin Film Transistor, thin film transistor (TFT)) substrate 2, film successively from the bottom to top Transistor 4, pixel electrode 6.As shown in Fig. 2 thin film transistor (TFT) 4 includes grid 41.
The surface of upper substrate 1 is provided with the first public electrode 7 and the second public electrode 8, wherein, the first public electrode 7 Relative with thin film transistor (TFT) 4, the second public electrode 8 is relative with pixel electrode 6, and the first public electrode 7 and thin film transistor (TFT) 4 Grid 41 has same potential.
Electric field is formed between first public electrode 7 and thin film transistor (TFT) 4, to control the first public electrode 7 and film crystal Liquid crystal molecule deflection between pipe 4, prevents the light leak of liquid crystal layer 3.Second public electrode 8 and pixel electrode 6 form electric field, control the Liquid crystal molecule deflection between two public electrodes 8 and pixel electrode 6, to control the GTG of liquid crystal display panel to show.
In general, the electric field formed between the first public electrode 7 and the grid 41 of thin film transistor (TFT) 4 is vertical direction Electric field, and control the first public electrode 7 identical with the current potential between the grid 41 of thin film transistor (TFT) 4, it is first public so as to control The direction of liquid crystal molecule is vertical direction between electrode 7 and grid 41, when the liquid crystal molecule between upper substrate 1 and infrabasal plate is in , can be by the current potential of the first public electrode of control 7 and grid 41 during L0 GTGs (i.e. black rank) state, and then control liquid crystal display The liquid crystal molecule at the edge of panel grid 41 not light leak.
Wherein, carry out that sealing is bonding, and the sealant is electric conduction seal frame glue between upper substrate 1 and infrabasal plate by sealant.
Specifically, control the current potential of the first public electrode 7 identical with the current potential of the grid 41 of thin film transistor (TFT) 4, for example, on Connected, the first public electrode 7 can be electrically connected with sealant by the sealant of conduction between substrate 1 and infrabasal plate, and The grid 41 of thin film transistor (TFT) 4 and the sealant are electrically connected with, so as to ensure between the first public electrode 7 and grid 41 electrically Connection, realizes that current potential is identical.
Preferably, public voltage signal line (not shown) is also included on infrabasal plate, the second public electrode 8 is by leading The sealant of electricity is connected with public voltage signal line.
Further, the distance between the first public electrode 7 and the second public electrode 8 D1 scopes are 2~4 microns.First Distance D2 scopes between projection and pixel electrode 6 of the public electrode 7 on infrabasal plate are 2~4 microns, the second public electrode 8 The distance D3 scopes of projection and pixel electrode 6 on infrabasal plate are also 2~4 microns, wherein, the first public electrode 7 is in lower base Projection and pixel electrode 6 on plate is misaligned, and projection of second public electrode 8 on infrabasal plate can part with pixel electrode 6 Overlap.The distance between the projection of second public electrode 8 and pixel electrode 6, for the projection two sides relative with pixel electrode 6 The distance between;The distance between the projection of second public electrode 8 and pixel electrode 6, for the projection and 6 same one side of pixel electrode Distance, such as the distance between left side of the left side and pixel electrode 6 of the second public electrode 8 projection.
Further, the current potential of the first public electrode 7 be according to the fixed frequency of grid voltage come control and make its with it is thin The grid 41 of film transistor 4 has same potential.Grid voltage is the voltage of grid 41.
For example, the fixed frequency of grid voltage can be 60 hertz or 120 hertz, VGH is carried out under the fixed frequency Switch with VGL switch, the current potential of the first public electrode 7 can be controlled according to the fixed frequency, makes itself and thin film transistor (TFT) 4 Grid 41 there is same potential.
Further, infrabasal plate also includes the chromatic filter layer 5 positioned at the top of thin film transistor (TFT) 4, thin film transistor (TFT) 4 with The first passivation layer 9 is provided between chromatic filter layer 5, the second passivation layer 10, pixel electrode 6 are provided with chromatic filter layer 5 Above the second passivation layer 10.
Further, as shown in Fig. 2 thin film transistor (TFT) 4 includes successively from the bottom to top:Grid 41, insulating barrier 42, non-crystalline silicon Layer 43, semiconductor conducting layer 44 (i.e. active layer, conducting channel), source electrode 45 and drain electrode are included on semiconductor conducting layer 44 (not shown).Wherein, amorphous silicon layer 43 is A-Si layers, and insulating barrier 42 is SiNx layer, and semiconductor conducting layer 44 is used to drain Conducting and disconnection between source electrode 45.Preferably, perforate, pixel electricity are provided with the first passivation layer 9 and the second passivation layer 10 Pole 6 is connected by the perforate and drain electrode.
Further, TFT substrate 2 and upper substrate 1 are glass plate.
First public electrode 7, the second public electrode 8 and pixel electrode 6 are that transparent conductive semiconductor thin-film material is made. For example, the transparent conductive semiconductor thin-film material can be that (Indium Tin Oxides, indium tin oxide semiconductor are transparent by ITO Conducting film).
Further, the top of TFT substrate 2 is additionally provided with several controlling grid scan lines of several controlling grid scan lines and several data Line, several controlling grid scan lines of several controlling grid scan lines insulate up and down with several data wires to interlock, and marks the pixel region of array arrangement Domain, the red, green, blue color filter unit lower end of chromatic filter layer 5 corresponding to each pixel region are correspondingly arranged on a film Transistor 4.Wherein, the material of red, green, blue color filter unit is respectively red, green, blue color photoresist.
Further, the top of the second passivation layer 10 is provided with cylindrical spacer.Preferably, the cylindrical spacer is tapered pole Shape body.
Further, the line width of the first public electrode 7 is more than at least 3 microns of the line width of grid 41, to prevent that second is public Electric field is formed between electrode 8 and the grid 41 of thin film transistor (TFT) 4, controls the liquid between the first public electrode 7 and thin film transistor (TFT) 4 The deflection of brilliant molecule, the liquid crystal molecule at the edge of LCD gate plate 41 is caused light leak occur.
The present invention also provides a kind of liquid crystal display panel control method, and this method comprises the steps:
One upper substrate 1 is provided, the first public electrode 7 and the second public electrode 8 are prepared on the surface of upper substrate 1;
One TFT substrate 2 is provided, thin film transistor (TFT) 4 is prepared in TFT substrate 2, colored filter is prepared on thin film transistor (TFT) 4 Photosphere 5, pixel electrode 6 is prepared on chromatic filter layer 5, form infrabasal plate;
Seal liquid crystal layer 3 up for safekeeping between upper substrate 1 and infrabasal plate, obtain liquid crystal display panel, and be the He of the first public electrode 7 The grid 41 of thin film transistor (TFT) 4 provides same potential.
Further, the first public electrode 7 and the second public electrode 8 is set to specifically include on the surface of upper substrate 1:
Transparent conductive semiconductor thin-film material is plated on the surface of upper substrate 1;
Photoresist is coated with transparent conductive semiconductor thin-film material surface;
Semiconductor transparent conductive film material surface is exposed, developed and etching process, obtains the first public electrode 7 And second public electrode 8, wherein, the distance between the first public electrode 7 and the second public electrode 8 scope are 2~4 microns.
Preferably, pixel electrode 6 is prepared on chromatic filter layer 5 to specifically include:
Transparent conductive semiconductor thin-film material is plated on the surface of chromatic filter layer 5;
Photoresist is coated with transparent conductive semiconductor thin-film material surface;
Semiconductor transparent conductive film material surface is exposed, developed and etching process, obtains pixel electrode 6.It is excellent Selection of land, it is equal apart from scope between the projection and pixel electrode 6 of the first public electrode 7 and the second public electrode 8 on infrabasal plate For 2~4 microns, and projection and pixel electrode 6 of first public electrode 7 on infrabasal plate are misaligned.
In summary, liquid crystal display panel provided by the invention and its control method, by preparing first on upper substrate 1 The public electrode 8 of public electrode 7 and second, the first public electrode 7 is relative with thin film transistor (TFT) 4, and the first public electrode 7 and film There is same potential, for controlling the liquid crystal molecule at the edge of LCD gate plate 41 to be located between the grid 41 of transistor 4 The direction of vertical upper substrate 1 and infrabasal plate, does not deflect, prevents in L0 gray scale states, the liquid crystal molecule at the edge of grid 41 There is light leak.
The present invention carries out graphical demarcation on upper substrate 1 to public electrode, in the grid 41 of the thin film transistor (TFT) 4 of infrabasal plate The independent figure of first public electrode 7 (using ITO pattern exposure imaging etching etc.) is designed at corresponding upper substrate 1, can individually be controlled Voltage between first public electrode 7 of infrabasal plate grid 41 processed and corresponding upper substrate 1, and then control LCD gate plate The liquid crystal molecule at the edge of grid 41 will not printing opacity in L0 low GTGs for the liquid crystal molecule at 41 edges.The present invention reduces one of BM system Journey, increases the graphic definition processing procedure of one of public electrode, therefore does not also interfere with dark-state table of the display panel in the low GTGs of L0 It is existing.
Further, the line width of the first public electrode 7 is more than at least 3 microns of the line width of grid 41, to prevent that second is public Interference of the electric field formed between electrode 8 and thin film transistor (TFT) 4 to the edge liquid crystal molecule of grid 41.
Above content is to combine specific preferred embodiment further description made for the present invention, it is impossible to is assert The specific implementation of the present invention is confined to these explanations.For general technical staff of the technical field of the invention, On the premise of not departing from present inventive concept, some simple deduction or replace can also be made, should all be considered as belonging to the present invention's Protection domain.

Claims (10)

  1. A kind of 1. liquid crystal display panel, it is characterised in that including:Upper substrate (1), infrabasal plate, liquid crystal layer (3);
    The liquid crystal layer (3) is sealed between the upper substrate (1) and the infrabasal plate;
    The infrabasal plate includes TFT substrate (2), thin film transistor (TFT) (4), pixel electrode (6) successively from the bottom to top;
    The surface of the upper substrate (1) is provided with the first public electrode (7) and the second public electrode (8), wherein, described first Public electrode (7) and the thin film transistor (TFT) (4) relatively, second public electrode (8) with the pixel electrode (6) relatively, And first public electrode (7) and the grid (41) of the thin film transistor (TFT) (4) have same potential.
  2. 2. liquid crystal display panel according to claim 1, it is characterised in that first public electrode (7) and described the The distance between two public electrodes (8) scope is 2 ~ 4 microns;
    The projection of first public electrode (7) and second public electrode (8) on the infrabasal plate and pixel electricity The distance between pole (6) scope is 2 ~ 4 microns, and projection and institute of first public electrode (7) on the infrabasal plate It is misaligned to state pixel electrode (6).
  3. 3. liquid crystal display panel according to claim 1, it is characterised in that the current potential of first public electrode (7) is Make it that there is same potential with the grid (41) to control according to the fixed frequency of grid voltage.
  4. 4. liquid crystal display panel according to claim 1, it is characterised in that the infrabasal plate also includes being located at the film Transistor(4)The chromatic filter layer of top(5), it is provided between the thin film transistor (TFT) (4) and the chromatic filter layer (5) First passivation layer (9), is provided with the second passivation layer (10) on the chromatic filter layer (5), and the pixel electrode (6) is located at institute State above the second passivation layer (10);
    The thin film transistor (TFT) (4) includes successively from the bottom to top:Grid (41), insulating barrier (42), amorphous silicon layer (43), semiconductor Conductive layer (44), source electrode (45) and drain electrode are also included on the semiconductor conducting layer (44).
  5. 5. liquid crystal display panel according to claim 1, it is characterised in that the TFT substrate (2) and the upper substrate (1) it is glass plate;
    First public electrode (7), second public electrode (8) and the pixel electrode (6), which are that semiconductor is transparent, leads Conductive film material is made.
  6. 6. liquid crystal display panel according to claim 4, it is characterised in that be additionally provided with number above the TFT substrate (2) Bar controlling grid scan line and several data wires, several described controlling grid scan lines insulate up and down with several described data wires to interlock, and marks The pixel region of array arrangement, under the red, green, blue color filter unit of the chromatic filter layer (5) corresponding to each pixel region End is correspondingly arranged on a thin film transistor (TFT) (4).
  7. 7. liquid crystal display panel according to claim 4, it is characterised in that be provided with above second passivation layer (10) Cylindrical spacer.
  8. 8. liquid crystal display panel according to claim 4, it is characterised in that the line width of first public electrode (7) is big In at least 3 microns of the line width of the grid (41).
  9. 9. a kind of liquid crystal display panel control method, it is characterised in that comprise the steps:
    One upper substrate (1) is provided, the first public electrode (7) and the second public electrode are prepared on the surface of the upper substrate (1) (8);
    One TFT substrate (2) is provided, thin film transistor (TFT) (4) is prepared in the TFT substrate (2), in the thin film transistor (TFT) (4) On prepare chromatic filter layer (5), prepare pixel electrode (6) on the chromatic filter layer (5), form infrabasal plate;
    Seal liquid crystal layer (3) up for safekeeping between the upper substrate (1) and the infrabasal plate, obtain liquid crystal display panel, and be described the The grid (41) of one public electrode (7) and the thin film transistor (TFT) (4) provides same potential.
  10. 10. liquid crystal display panel control method according to claim 9, described to be set on the surface of the upper substrate (1) First public electrode (7) and the second public electrode (8), are specifically included:
    Transparent conductive semiconductor thin-film material is plated on the upper substrate (1) surface;
    Photoresist is coated with the transparent conductive semiconductor thin-film material surface;
    The transparent conductive semiconductor thin-film material surface is exposed, developed and etching process, it is public to obtain described first Electrode (7) and second public electrode (8).
CN201710896773.6A 2017-09-28 2017-09-28 Liquid crystal display panel and control method thereof Active CN107589601B (en)

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CN113920957A (en) * 2021-10-29 2022-01-11 重庆惠科金渝光电科技有限公司 Liquid crystal display device and driving method thereof

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CN105511189A (en) * 2016-02-16 2016-04-20 深圳市华星光电技术有限公司 VA-type COA liquid crystal display panel
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