CN107586589A - A kind of semiconductor silicon material water base cutting liquid - Google Patents
A kind of semiconductor silicon material water base cutting liquid Download PDFInfo
- Publication number
- CN107586589A CN107586589A CN201610537512.0A CN201610537512A CN107586589A CN 107586589 A CN107586589 A CN 107586589A CN 201610537512 A CN201610537512 A CN 201610537512A CN 107586589 A CN107586589 A CN 107586589A
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- cutting liquid
- silicon material
- semiconductor silicon
- water base
- material water
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- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The present invention relates to a kind of semiconductor silicon material water base cutting liquid, its raw material components and its parts by weight are respectively：Polyethylene glycol 30 60%；AEEA 8-15%；Triethanolamine 15-25%；FA/QB chelating agents 8-12%；Surplus is water.The present invention uniformly acts on the surface to be machined of silicon chip, silicon chip Residual Damage can be made small, reduce the processing capacity of process below using hydroxide ion and pasc reaction caused by amine base.Polyethylene glycol can adsorb produces very high barrier potential and electricity base in the surface of solids, absorption of the chip particles on fresh cut surface can be hindered, coordinate more than 13 chelate rings, non-metallic ion and ethylenediamine tetra-acetic acid four (tetrahydroxyethyl-ethylene diamine) the FA/QB chelating agents for being dissolved in water, with the excellent function of removing metal ion, iron ion caused by blade especially can be efficiently removed, metal ion in process can be greatly lowered chip is stained.
Description
Technical field
The invention belongs to cut oily field, more particularly to a kind of semiconductor silicon material water base cutting liquid.
Background technology
Using inner circle cutting blade cut monocrystalline silicon, polysilicon and other compound semiconductor materials crystal block when workpiece,
General widely used neutral cutting fluid cools to being lubricated between blade and workpiece, takes away frictional heat and wash away chip.Have
A little cutting fluid addition antirust agent, for preventing lathe and blade from getting rusty.Cutting semiconductor crystal block mainly leans on high-speed revolving blade
Strength mechanism, this processing mode causes serial section tool marks coarse, and crushable layer, damage layer depth, residual stress is big, broken
Piece, chipping, phenomena such as being completely cured, are serious, and damaging layer is up to the processing capacity of the process such as 30-50 microns, increase grinding below, polishing,
Not only waste material but also reduce processing efficiency and yield rate.Due to chip and the effect of fresh cut cross-sectional face energy, chip and table
Face produces strong suction-operated, and chip, which is not easy to be cut liquid band, to be walked, while also reduces cutting speed.Cut in addition, being same as fragrant plant
Instrument and environmental factor, can produce the metal ion pollution based on iron ion, and metal ion can be attached to plane of crystal and ooze
Crystals are arrived thoroughly, cause metallic pollution, have a strong impact on the quality of super large-scale integration manufacture later process, my company grinds
Send a kind of non-metallic ion pollution, improve the cutting fluid of cutting piece rate and product qualified rate.
The content of the invention
It is an object of the invention in place of overcome the deficiencies in the prior art, there is provided a kind of to reduce half for polluting, being unlikely to deteriorate
Conductor silicon materials water-base cutting fluid.
The technical solution adopted for the present invention to solve the technical problems is：
A kind of semiconductor silicon material water base cutting liquid, its raw material components and its parts by weight are respectively：
Moreover, the polyethylene glycol relative molecular weight is 600.
Moreover, the preparation method of above-mentioned semiconductor silicon material water base cutting liquid is：
Xiang Shuizhong sequentially adds polyethylene glycol, AEEA, triethanolamine, is well mixed, and stands 20min, then add
Enter FA/QB chelating agents, be mixed evenly, stand 30min, produce product.
The advantages and positive effects of the present invention are：
The present invention using hydroxide ion and pasc reaction caused by amine base, is uniformly acting on the processed table of silicon chip
Face, silicon chip Residual Damage can be made small, reduce the processing capacity of process below.Polyethylene glycol can adsorb to be produced very in the surface of solids
High barrier potential and electricity are built, and can hinder absorption of the chip particles on fresh cut surface, coordinate more than 13 chelate rings, without metal from
Son and it is dissolved in ethylenediamine tetra-acetic acid four (tetrahydroxyethyl-ethylene diamine) FA/QB chelating agents of water, there is the excellent metal ion that goes
Function, iron ion caused by blade especially can be efficiently removed, metal ion can be greatly lowered in process to chip
Stain.
Embodiment
Below by specific embodiment, the invention will be further described, and following examples are descriptive, is not limit
Qualitatively, it is impossible to which protection scope of the present invention is limited with this.
Embodiment 1：
A kind of semiconductor silicon material water base cutting liquid, its raw material components and its weight are respectively：
The preparation method of above-mentioned semiconductor silicon material water base cutting liquid is：
Xiang Shuizhong sequentially adds polyethylene glycol, AEEA, triethanolamine, is well mixed, and stands 20min, then add
Enter FA/QB chelating agents, be mixed evenly, stand 30min, produce product.
Embodiment 2：
A kind of semiconductor silicon material water base cutting liquid, its raw material components and its weight are respectively：
The preparation method of above-mentioned semiconductor silicon material water base cutting liquid is the same as embodiment 1.
Embodiment 3：
A kind of semiconductor silicon material water base cutting liquid, its raw material components and its weight are respectively：
The preparation method of above-mentioned semiconductor silicon material water base cutting liquid is the same as embodiment 1.
Claims (3)
- A kind of 1. semiconductor silicon material water base cutting liquid, it is characterised in that：Its raw material components and its parts by weight are respectively：
- 2. semiconductor silicon material water base cutting liquid according to claim 1, it is characterised in that：Relative point of the polyethylene glycol Son amount is 600.
- A kind of 3. method for preparing semiconductor silicon material water base cutting liquid as claimed in claim 1, it is characterised in that：Its step For：The preparation method of above-mentioned semiconductor silicon material water base cutting liquid is：Xiang Shuizhong sequentially adds polyethylene glycol, AEEA, triethanolamine, is well mixed, and stands 20min, adds FA/ QB chelating agents, are mixed evenly, and stand 30min, produce product.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610537512.0A CN107586589A (en) | 2016-07-08 | 2016-07-08 | A kind of semiconductor silicon material water base cutting liquid |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610537512.0A CN107586589A (en) | 2016-07-08 | 2016-07-08 | A kind of semiconductor silicon material water base cutting liquid |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107586589A true CN107586589A (en) | 2018-01-16 |
Family
ID=61045955
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610537512.0A Pending CN107586589A (en) | 2016-07-08 | 2016-07-08 | A kind of semiconductor silicon material water base cutting liquid |
Country Status (1)
| Country | Link |
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| CN (1) | CN107586589A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3844142A4 (en) * | 2018-08-30 | 2022-07-06 | Huntsman Petrochemical LLC | Quaternary ammonium hydroxides of polyamines |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1858169A (en) * | 2006-05-31 | 2006-11-08 | 河北工业大学 | Semiconductor silicon material water base cutting liquid |
| CN104403774A (en) * | 2014-12-22 | 2015-03-11 | 厦门大学 | Water-based cutting fluid and preparation method thereof |
-
2016
- 2016-07-08 CN CN201610537512.0A patent/CN107586589A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1858169A (en) * | 2006-05-31 | 2006-11-08 | 河北工业大学 | Semiconductor silicon material water base cutting liquid |
| CN104403774A (en) * | 2014-12-22 | 2015-03-11 | 厦门大学 | Water-based cutting fluid and preparation method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3844142A4 (en) * | 2018-08-30 | 2022-07-06 | Huntsman Petrochemical LLC | Quaternary ammonium hydroxides of polyamines |
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| Date | Code | Title | Description |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180116 |
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| RJ01 | Rejection of invention patent application after publication |