CN107563361A - A kind of sensor pixel and optical sensor - Google Patents
A kind of sensor pixel and optical sensor Download PDFInfo
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- CN107563361A CN107563361A CN201710920202.1A CN201710920202A CN107563361A CN 107563361 A CN107563361 A CN 107563361A CN 201710920202 A CN201710920202 A CN 201710920202A CN 107563361 A CN107563361 A CN 107563361A
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Abstract
The embodiment of the invention discloses a kind of sensor pixel and optical sensor, wherein, sensor pixel includes：Layer is collimated, the collimation layer is interior formed with obtical tunnel, and the obtical tunnel is used for the light for receiving generally vertical direction in the light that target finger reflects；At least two photo-sensitive cells, for the light output electric signal received according to the obtical tunnel；Signal deteching circuit, electrically connected with one or more photo-sensitive cells, the electric signal of the photo-sensitive cell output for obtaining gating；Control unit, for controlling the quantity of the photo-sensitive cell gating.Technical scheme provided in an embodiment of the present invention, solve the problems, such as because overexposure or the under-exposed fingerprint image quality that brings be not high, realize the electric aperture size of dynamic regulation sensor pixel, realize the exposure of dynamic regulation sensor pixel, to obtain better image quality, the effect of signal to noise ratio is improved.
Description
Technical field
The present embodiments relate to fingerprint identification technology, more particularly to a kind of sensor pixel and optical sensor.
Background technology
Fingerprint sensor is broadly divided into two classes, i.e. optical fingerprint sensor and capacitive fingerprint sensing device at present.Condenser type
Fingerprint sensor be formed by measuring between fingerprint valley, crestal line and plane sensing electrode array element connection electric capacity it is big
Small difference is come to fingerprint imaging.When the dielectric layer between sensing electrode array and finger is thicker, electric capacity can decay, sensing
The imaging of device also can be fuzzyyer.Due to the development of technology, dielectric layer of the fingerprint sensor between sensing electrode and target electrode
Thickness increases to 100um magnitudes from 10um magnitudes.What is more, it is contemplated that the integrality of the industrial design of mobile phone screen, it is desirable to
Fingerprint sensor can be directed through screen glass, that is, thickness 400um-500um chemically reinforced glass.So optics refers to
The penetration power of line sensor has very big advantage than capacitive fingerprint sensing device.
But traditional optical fingerprint sensor is applied when on the smart machines such as mobile phone, there is the shortcomings that individual very big i.e. optics to refer to
The thickness of line sensor is generally larger, because optical fingerprint sensor usually requires to place a finger on optical mirror slip, finger exists
Under built-in light source irradiation, the light of injection the angle reflected and reflects back on the rough strain line of finger surface fingerprint
Bright and dark light is just different, forms the device such as light intensity spatial distribution image, lens and focuses on image projection on the image sensor,
Obtain multi-grayscale fingerprint image.Due to needing the optical textures such as lens, cause optical length, sensor general thickness is big, is unfavorable for
The industrial design of mobile phone.
If optical fingerprint sensor is directly arranged on bottom of screen, then because refraction and irreflexive reason are each
Pixel is very big by optical range, and the light of adjacent crestal line or valley line reflection is received by same pixel causes image to obscure.It is existing
Have by setting collimater on optical fingerprint sensor in technology, to solve this problem.But through fingerprint improvement and pass
The electric aperture of the pixel of sensor can not be adjusted, it may appear that because of overexposure or under-exposure, the fingerprint image matter for obtaining collection
The problem of amount is not high,.
The content of the invention
The present invention provides a kind of sensor pixel and optical sensor, to solve because of overexposure or the under-exposed figure brought
As the problem of of low quality, the exposure of the electric aperture size, dynamic regulation sensor pixel of dynamic regulation sensor pixel is realized
Light, better image quality is obtained, improve signal to noise ratio.
In a first aspect, the embodiments of the invention provide a kind of sensor pixel, including：
Layer is collimated, the collimation layer is interior formed with obtical tunnel, and the obtical tunnel is used to receive the reflection of target finger
The light of generally vertical direction in light；
At least two photo-sensitive cells, for the light output electric signal received according to the obtical tunnel；
Control unit, for controlling the quantity of the photo-sensitive cell gating；
Signal deteching circuit, electrically connected with one or more photo-sensitive cells, for obtaining the photosensitive member of gating
The electric signal of part output.
Preferably, the collimation layer includes at least one layer of mask layer；The mask layer includes transmission region and light tight area
Domain.
Preferably, the quantity of the mask layer is at least two layers；
The transmission region of the adjacent mask layer staggers, and the projected area of the obtical tunnel of formation is less than the printing opacity
The area in region.
Preferably, the corresponding obtical tunnel of each photo-sensitive cell.
Preferably, described device also includes load circuit, at least one first switch and at least one second switch；
The load circuit is used to provide driving voltage or driving current；
Each sensor pixel includes M row N row photo-sensitive cells, and wherein M and N are the integer more than or equal to 1；
The first pole of photo-sensitive cell is electrically connected to the load circuit by a first switch described in per a line, each
The second pole for arranging the photo-sensitive cell is electrically connected to the input of signal deteching circuit by a second switch.
Preferably, the signal deteching circuit includes：
Integrating circuit, input are electrically connected to the second pole of the photo-sensitive cell by the second switch, output end with
Described control unit electrically connects；
Described control unit is used for the quantity that the photo-sensitive cell according to the output control of the integrating circuit gates.
Preferably, the integrating circuit includes：
Amplifier；Its input in the same direction is used to input the first reference voltage, and reverse input end is defeated with the integrating circuit
Enter end electrical connection, output end electrically connects with described control unit；
Integrating capacitor, its first pole electrically connect with the reverse input end of the amplifier, the second pole and the amplifier
Output end electrically connects；
First reset switch, it is in parallel with the integrating capacitor.
Preferably, the signal deteching circuit also includes：
Comparator, its first input end electrically connect with the output end of the amplifier, and the second input is used to input second
Reference voltage, output end are used for output switching activity signal.
Preferably, the signal deteching circuit also includes：
At least one second reset switch, the first end of each second reset switch and the second of the photo-sensitive cell
Pole electrically connects, the second end ground connection of second reset switch；
Preferably, the signal deteching circuit also includes compensation circuit, and the compensation circuit is defeated with the integrating circuit
Enter end electrical connection, for injecting electric charge to integrating circuit to adjust integrating circuit electric charge cumulative amount.
Preferably, the compensation circuit include current source and the 3rd switch, the current source by the described 3rd switch with
The reverse input end electrical connection of the amplifier.
Preferably, if the magnitude of voltage that described control unit is used for the signal of integrating circuit output is less than the first setting threshold
Value, by controlling the conducting of the first switch and the second switch, increase gates the signal deteching circuit electrical connection
The quantity of the photo-sensitive cell；If the magnitude of voltage of the signal of the integrating circuit output is more than the second given threshold, pass through control
The first switch and second switch shut-off, reduce and gate the photo-sensitive cell that the signal deteching circuit electrically connects
Quantity.
Second aspect, the embodiment of the present invention additionally provide a kind of optical sensor, including sensor pixel array, the biography
Sensor pel array includes the sensor pixel that multiple any embodiments of the present invention provide.
Preferably, the optical sensor also includes light source, and the light source is located at the both sides of the sensor pixel array.
The embodiments of the invention provide a kind of sensor pixel for including collimation layer, formed with obtical tunnel in collimation layer,
The light of generally vertical direction in the light of target finger reflection can be received, the number of photo-sensitive cell gating is controlled by control unit
Amount, i.e., by controlling the quantity of photo-sensitive cell gating, the electric aperture of sensor pixel can be adjusted.Solves existing sensor
The electric aperture of pixel can not be adjusted, because the problem of picture quality that collection obtains is not high occurs in overexposure or under-exposure,
The electric aperture size of dynamic regulation sensor pixel is realized, the picture quality of acquisition is improved, improves signal to noise ratio.
Brief description of the drawings
Fig. 1 is a kind of diagrammatic cross-section of sensor pixel provided in an embodiment of the present invention；
Fig. 2 is a kind of separate structure schematic diagram of sensor pixel provided in an embodiment of the present invention；
Fig. 3 is the diagrammatic cross-section of another sensor pixel provided in an embodiment of the present invention；
Fig. 4 is the structural representation of another sensor pixel provided in an embodiment of the present invention；
Fig. 5 is the structural representation of another sensor pixel provided in an embodiment of the present invention；
Fig. 6 is a kind of diagrammatic cross-section of optical sensor provided in an embodiment of the present invention.
Embodiment
The present invention is described in further detail with reference to the accompanying drawings and examples.It is understood that this place is retouched
The specific embodiment stated is used only for explaining the present invention, rather than limitation of the invention.It also should be noted that in order to just
Part related to the present invention rather than entire infrastructure are illustrate only in description, accompanying drawing.The present invention is using fingerprint sensor to illustrate
The operation principle of integration adjustment circuit is released, but does not limit the scope of the present invention, the scope of the present invention should be with claims
Contents be defined.
Fig. 1 is a kind of diagrammatic cross-section of sensor pixel provided in an embodiment of the present invention, the tool of the sensor pixel 100
Body structure is as follows：
Layer 110 is collimated, collimation layer 110 is interior anti-for receiving target finger formed with obtical tunnel 111, obtical tunnel 111
The light of generally vertical direction in the light penetrated；At least two photo-sensitive cells 120 are used for the light output electricity received according to obtical tunnel 111
Signal.
Control unit, for the quantity for controlling photo-sensitive cell 120 to gate.
Signal deteching circuit, electrically connected with one or more photo-sensitive cells 120, for obtaining the photo-sensitive cell 120 of gating
The electric signal of output.
Wherein, photo-sensitive cell 120 can be photodiode or photo resistance, and each photo-sensitive cell 120 corresponds to an optics
Tunnel 111.
The light of target to be detected such as finger reflection is from multiple angular illuminations on sensor pixel 100.Wherein, only greatly
Cause the light of vertical direction to be collimated obtical tunnel 111 in layer 110 to be received, and launch from the obtical tunnel 111 of collimation layer 110
Go out, such as light 11 can be launched from obtical tunnel 111, be radiated on photo-sensitive cell 120, and with collimation layer 110 away from sense
The one side of optical element 120 can not launch in the light 12 of less angle from obtical tunnel 111.Connect so as to limit pixel light
The light of the scope of receipts, the adjacent crestal line of such target finger print or valley line reflection is general only to be received by same pixel, is subtracted
Lack interference of the light of different directions to fingerprint image to strengthen the definition of the fingerprint image of acquisition.And the embodiment of the present invention carries
The collimation layer 110 of confession can be set sufficiently thin to provide ultra-thin fingerprint identification device.After photo-sensitive cell 120 receives light 11,
Electric signal is exported to signal deteching circuit.Signal deteching circuit obtains the electric signal that photo-sensitive cell 120 exports, the power of electric signal
Corresponding different light intensity.Control unit can include logic circuit, in a kind of embodiment of the embodiment of the present invention, control
Unit processed can electrically connect with the output end of signal deteching circuit, and the signal magnitude exported according to signal deteching circuit controls gating
Photo-sensitive cell 120 number.Control unit can also receive the control signal of outside, such as receive the control of the processor of outside
Signal processed, the number of the photo-sensitive cell of gating is controlled according to control signal.
Specifically, the quantity of photo-sensitive cell 120 can be gated according to certain rule, for example, when ambient light is weak
Wait, the light that photo-sensitive cell 120 obtains is weaker, and the value for the electric signal that photo-sensitive cell 120 exports is smaller, now signal deteching circuit
The magnitude of voltage of the electric signal of output is smaller, when the magnitude of voltage is less than the first threshold of setting, the controllable increase choosing of control unit
The number of logical photo-sensitive cell 120；And when ambient light is stronger, the light that photo-sensitive cell 120 obtains is stronger, photo-sensitive cell 120
The value of the electric signal of output is larger, and the magnitude of voltage of now signal deteching circuit output is larger, when the magnitude of voltage is more than the of setting
During two threshold values, the number of the controllable photo-sensitive cell 120 for reducing gating of control unit.
Thus, control unit can gate the number of photo-sensitive cell 120 by controlling, and reach adjustment fingerprint sensor pixel
Electric aperture effect, can so improve according to sensor pixel export image data acquisition image quality, example
As sensor pixel is applied in fingerprint sensor, the quality of the fingerprint image of acquisition can be improved, improves signal to noise ratio.
The technical scheme of the present embodiment, by providing a kind of sensor pixel, the sensor pixel, which is set, to be included collimating layer
With the control unit of at least two photo-sensitive cells, signal deteching circuit and control gating photo-sensitive cell quantity, solves existing biography
The electric aperture of sensor pixel can not be adjusted, and overexposure or under-exposure occur that the picture quality of collection acquisition is not high and asked
Topic, has reached the electric aperture size of dynamic regulation sensor pixel, equivalent to the exposure of dynamic regulation sensor pixel, to obtain
Better image quality is obtained, improves the effect of signal to noise ratio.
Fig. 2 is a kind of separate structure schematic diagram of sensor pixel provided in an embodiment of the present invention, wherein, the collimation layer
110 include at least one layer of mask layer 113；Mask layer 113 includes transmission region 113A and light tight region 113B.Reflex to shade
The transmission region 113A of layer 113 light can be launched from transmission region 113A, reflex to light tight region 113B light
It will not be emitted.
Wherein, the material of mask layer 113 can select the materials such as metal, metal oxide or carbonic ester.Further, hide
Cap layer 113 can be black, the light absorption that will can be irradiated to light tight region 113B, can further reduce other directions
The light of generally vertical direction that receives of the straight layer of optical registration caused by influence, to improve the quality of fingerprint image.
Specifically, Fig. 3 show the diagrammatic cross-section of another sensor pixel provided in an embodiment of the present invention, collimates layer
The quantity of 110 mask layers 113 included is at least two layers；The transmission region 113A of adjacent shrouds layer 113 staggers, the optics of formation
The projected area in tunnel 111 is less than transmission region 113A area, such as obtical tunnel 111 projects area on a sensor
122 are less than transmission region 113A area, also just say that the area 122 on sensor that is projected in of obtical tunnel 111 is less than transparent area
Domain 113 projects area 121 on a sensor.
Adjacent shrouds layer 113 is arranged to the structure to stagger；Correspondingly, the transmission region 113A of adjacent shrouds layer 113 is mutual
Stagger, the light tight region 113B of adjacent shrouds layer 113 mutually staggers, and the interior wall construction of the obtical tunnel 111 of formation shows
It is stepped.The light tight region 113B of one in two neighboring mask layer 113 blocks the one of another transmission region 113A
Part so that the projected area of obtical tunnel 111 is less than transmission region 113A area.The benefit that mask layer 113 is so set
It is to be advantageous to the collimating effect for further improving collimation layer, makes the smaller by optical range of whole pixel.When one layer of shade of use
Layer 113, in order to be improved collimating effect, typically realized by reducing the transmission region 113A of mask layer 113 area, work as printing opacity
Region 113A do it is smaller when, technology difficulty is bigger, or even existing technique will be unable to realize.But use at least two or
The more than two mask layers 113 of person are interlaced to form smaller obtical tunnel section, improve collimating effect, each mask layer
The 113 transmission region very little that it goes without doing, can reduce the technology difficulty to form mask layer 113.
Fig. 4 show a kind of structural representation of sensor pixel provided in an embodiment of the present invention, in above-described embodiment
On the basis of, the sensor pixel also includes：
Load circuit 180, at least one first switch S10 and at least one second switch S20.
Load circuit 180 is used to provide driving voltage or driving current.
Each sensor pixel includes M row N row photo-sensitive cell 120, and wherein M and N are the integer more than or equal to 1.
Load circuit 180, Mei Yilie is electrically connected to by a first switch S10 per the first pole of a line photo-sensitive cell 120
Second pole of photo-sensitive cell 120 is electrically connected to the input of signal deteching circuit 140 by a second switch S20.Wherein first
Switch S10, second switch S20 can be switching transistors, and control unit 150 can electrically connect with the grid of each switching transistor,
The conducting or shut-off of each transistor can be controlled.
Can be M with 120 corresponding first switch S10 of M row N row photo-sensitive cell quantity, second switch S20 quantity
Can be N number of.Can by controlling first switch S10 conducting or shut-off, and control second switch S20 conducting or
Shut-off, gates one or more photo-sensitive cell 120.Exemplarily, when the switch S10 and jth of the i-th row the switch S20 arranged are closed
During conjunction, the photo-sensitive cell 120 of the i-th row jth row is gated, the photo-sensitive cell 120 is electric to signal detection by caused electric signal transmission
Road 140.It is most left by gating when the second switch S20 of the leftmost side shown in Fig. 4 is turned on when controlling all first switch S10 conductings
The photo-sensitive cell 120 that side one arranges.
The technical scheme of the present embodiment, by providing a kind of sensor pixel being made up of light-sensing element array, control the
The conducting or shut-off of one switch, and the conducting or shut-off of control second switch, the gating number of photo-sensitive cell can be controlled
Amount, electric aperture regulation is carried out to fingerprint image.The electric aperture for solving existing fingerprint sensor pixel can not be adjusted, overexposure
The problem of fingerprint image quality that collection obtains is not high occurs in light or under-exposure, has reached dynamic regulation sensor pixel
Electric aperture size, that is, reach the exposure of dynamic regulation sensor pixel, better image quality can be obtained, improve noise
The effect of ratio.
Wherein, signal deteching circuit 140 may include：
Integrating circuit 142, the input of integrating circuit 142 are electrically connected to the of photo-sensitive cell 120 by second switch S20
Two poles, output end electrically connect with control unit 150.
Control unit 150 is used for the quantity gated according to the output control photo-sensitive cell 120 of integrating circuit 142.Preferably,
Integrating circuit 142 includes：
Amplifier A10；Amplifier A10 input in the same direction is used to input the first reference voltage V10, reverse input end and product
The input electrical connection of parallel circuit 142, output end electrically connect with control unit 150.
Integrating capacitor C10, its first pole electrically connect with amplifier A10 reverse input end, and the second pole is with amplifier A10's
Output end electrically connects.
First reset switch S30, it is in parallel with integrating capacitor C10.
Amplifier A10 reverse input end receives the electric signal that photo-sensitive cell 120 is sent, and is accumulated on integrating capacitor C10.
The light of varying strength enters photo-sensitive cell 120, such as the light intensity of the crestal line reflection of fingerprint is high, and the light of valley line reflection is strong
Spend it is weak, when the light of the light and valley line of the crestal line reflected light of fingerprint reflection is irradiated to the photo-sensitive cell 120 of sensor pixel, sense
The output of optical element 120 is different.Specifically, if the light of obtical tunnel reception is stronger, the electric signal that photo-sensitive cell 120 exports
(electric current) can it is larger, and then integrator output reach predeterminated voltage time it is shorter, such as reach saturation time it is shorter.
If the light intensity of the reception of obtical tunnel is smaller, the electric signal (electric current) that photo-sensitive cell 120 exports can be smaller, and then integrator
The time that output reaches predeterminated voltage is long.When first reset switch S30 is closed, integrating capacitor C10 is resetted.Signal detection
Circuit can accurately draw light in the obtical tunnel in respective sensor pixel number time, so as to be obtained according to the time
To clearly fingerprint image.For example, processor reaches the time of predeterminated voltage by obtaining the output voltage of integrator, and then obtain
To fingerprint image.
On the basis of above-described embodiment, signal deteching circuit 140 also includes：
The of at least one second reset switch S40, each second reset switch S40 first end and photo-sensitive cell 120
Two poles electrically connect, the second reset switch S40 the second end ground connection.
Current source 141 and the 3rd switchs S50, the reverse input that current source 141 passes through the 3rd switch S50 and amplifier A10
End electrical connection.
The second reset switch S40 is set to reset integrator 142, to discharge the electric charge of photo-sensitive cell 120, reduction pair
The influence of next frame data of sensor pixel output.
Further, in sensor pixel provided in an embodiment of the present invention, signal deteching circuit may also include compensation electricity
Road, compensation circuit electrically connect with the input of integrating circuit, for injecting electric charge to integrating circuit to adjust integrating circuit electric charge
Cumulative amount.
Exemplarily, referring to Fig. 5, Fig. 5 is the structural representation of another sensor pixel provided in an embodiment of the present invention.
On the basis of above-described embodiment, the current source 141 and the 3rd that the sensor pixel also includes forming compensation circuit switchs S50,
Current source 141 is electrically connected by the 3rd switch S50 with the input of integrating circuit 142.
During the 3rd switch S50 closures, the electric charge injection integrating circuit 142 of current source 141, the product of compensation integrating circuit 142
Component velocity, two kinds of working conditions of compensation circuit are compensating coefficient and reset state, when the 3rd switch S50 is closed, current source 141
Electric charge injection integrating circuit 142 be compensating coefficient.Compensating switch 141 is reset state when disconnecting.Right using current source 141
When the quantity of electric charge that integrating circuit 142 is accumulated compensates, can be in time by integrating circuit compensation according to the process of integration
It is continuous or discontinuous.
Further below to add compensation circuit sensor pixel the overall course of work and operation principle chat
State.
The sensor pixel shown in Fig. 5 is refer to, in order that obtaining the quantity of electric charge corresponding with crestal line and valley line of photo-sensitive cell 120
Measurable voltage signal is formed, the second switch S20 electrically connected with sensory elements 120 the other end switchs S60 by the 4th,
Namely the input of charge transfer switch connection integrating circuit 142, the job step of fingerprint sensor include：
S1 resets integrating circuit 142；
S2 resets photo-sensitive cell 120, resets compensation circuit；
The switch S60 of S3 closures the 4th, disconnect the second reset switch S40, the switch of closure the 3rd S50；
S4 return to step S2.
In step S1 resets integrating circuit 142, in order to ensure that the uniformity of measurement is needed in advance before integration to integration
Electric capacity C10 resets, and the process of reset causes integrating capacitor C10 to have an initial electricity, it is assumed for example that in integrating capacitor
The reference voltage at C10 both ends is respectively Vref3 and Vref5, and the quantity of electric charge is Qrst=(Vref3- after the reset of integrating capacitor 522
Vref5) * Cr, Cr are the capacitance of integrating capacitor., can in order to simplify the structure of reset circuit in sensor pixel shown in Fig. 5
Integrating capacitor C10 both ends are directly connected to the first reset switch S30, that is, integrating capacitor C10 electricity Qrst=0 after resetting.
The process of multiple integral is repeated several times i.e. in integrating circuit 142, and electric charge caused by photo-sensitive cell 120 is repeated several times to integrating capacitor C10
The process of charging.And when being charged every time to integrating capacitor C10, compensation circuit passes through the 3rd switch S50 and integrating circuit 520D electricity
Connection, inject electric charge to integrating circuit 520.
Include in step s 2：Step S21, the second reset switch S40 of closure are resetted；Step S22, compensation circuit are led to
The switch of disconnection the 3rd S50 is crossed to be resetted.
In the switch S60 of step S3 closures the 4th, the photo-sensitive cell 120 of gating electrically connects with integrating circuit 520, compensation circuit
Electric charge is injected to integrating circuit 142, the integral charge cumulative amount of integrating circuit 142 is adjusted.Integrating circuit 142 exports instead
Photo-sensitive cell 120 is answered to produce the size of the quantity of electric charge.
On the basis of above-described embodiment, signal deteching circuit 140 also includes：
Comparator A20, its first input end electrically connect with amplifier A10 output end, and its second input is used to input
Second reference voltage V20, output end are used for output switching activity signal.
Comparator A20 first input end electrically connects with amplifier A10 output end, when the output voltage of integrator 142
When reaching the voltage of the second input of comparator, comparator A20 output voltage signal is overturn, the time of energizing signal
Measure the output as sensor pixel.Then in the switch S60 of step S3 closures the 4th, the photo-sensitive cell 120 of gating passes through electric charge
Transfer switch 420 is connected to the input of integrating circuit 520, and the output end of integrating circuit 520 is connected to comparator A20 input
End, the output of comparator A20 output end as sensor, the time T of comparator A20 output switching activity voltage signals reflect photosensitive
Element 120 produces the size of the quantity of electric charge.
When the value changes of the output voltage of integrating circuit 520 are intersected with the reference voltage level in comparator A20, comparator
Output signal is overturn.
The flip-flop transition of comparator is T=(Qr.end-Qr.rst)/Δ Q, wherein, Qr.end is that comparator accumulates when overturning
Divide the quantity of electric charge of electric capacity, Qr.rst is the initial charge amount of integrating capacitor, and (Qr.end- is designed for given fingerprint sensor
Qr.rst) it is definite value, and it is related to the compensating electric capacity initialization quantity of electric charge according to formula Δ Q.In engineering in practice in order to which easy T is rounded
Export as a result.
On the basis of above-described embodiment, if the magnitude of voltage that control unit 150 is used for the signal that integrating circuit 142 exports is small
In the first given threshold, by controlling first switch S10 and second switch S20 conducting, increase gating signal detection circuit 140
The quantity of the photo-sensitive cell 120 of electrical connection；If the magnitude of voltage for the signal that integrating circuit 142 exports is more than the second given threshold, lead to
Control first switch S10 and second switch S20 shut-offs are crossed, reduce the photo-sensitive cell 120 that gating signal detection circuit 140 electrically connects
Quantity.
When the magnitude of voltage that integrator 142 exports is less than the first given threshold, such as control unit 150 controls first switch
S10 and the 2nd S20 gates one or more photo-sensitive cells 120 to increase the output current of light-sensing element array, equivalent to increase
Electric aperture；When the magnitude of voltage that integrator 142 exports is more than the second given threshold, such as the voltage of 142 outputs of integrator
Close or equal to integrator 142 saturation voltage when, control unit 150 controls first switch S10 and the 2nd S20 to close one
Or multiple photo-sensitive cells 120 to be to reduce the output current of light-sensing element array, equivalent to reducing electric aperture.
The technical scheme of the present embodiment, by providing a kind of sensor pixel, the sensor pixel set include collimation layer,
Photo-sensitive cell signal deteching circuit and control unit, the electric aperture for solving existing sensor pixel can not be adjusted, overexposure
Or the under-exposed electronic light that the problem of picture quality for gathering acquisition is not high occurs, realizes dynamic regulation sensor pixel
The exposure of size, i.e. dynamic regulation sensor pixel is enclosed, to obtain better image quality, improves the effect of signal to noise ratio.
In the other embodiment of the embodiment of the present invention, control unit can receive the control signal of outside, Perceived control
The number that optical element 120 gates.Such as outside processor receives the output of sensor pixel, image is obtained, according to image
Control unit 150 of the quality into sensor pixel sends control signal, the number that control photo-sensitive cell 120 gates.Specifically,
Processor detect image it is second-rate when, can to control unit 150 send control signal, the basis of control unit 150
The control signal, the number of the sensing element 120 of control increase gating.Processor can also be according to the light of environment, in environment
When light is stronger, control signal is sent to control unit 150, control unit 150 reduces gating according to the control signal, control
The number of photo-sensitive cell 120；When ambient light is weaker, control signal, the basis of control unit 150 are sent to control unit 150
The control signal, the number of the photo-sensitive cell 120 of control increase gating.
The embodiment of the present invention additionally provides a kind of optical sensor.Fig. 6 is that a kind of optics provided in an embodiment of the present invention passes
The diagrammatic cross-section of sensor, referring to Fig. 6, the sensor pixel array includes the sensor picture in multiple any embodiments of the present invention
Element 100.Sensor pixel is located on the chip 101 of sensor, and above-mentioned optical sensor possesses included sensor pixel 100
Functional module and beneficial effect.Optical sensor can be optical fingerprint sensor, be arranged on the bottom of terminal, such as set
In the bottom of OLED terminals.After the light sent by terminal is irradiated on finger, the light of finger print reflection passes through the glass of terminal
Glass enters on sensor pixel 100 obtical tunnel for collimating layer, sensor pixel output signal, and then according to fingerprint sensor
Signal carries out fingerprint recognition.
It should be noted that if optical sensor included multiple sensor pixels, multiple sensing in optical sensor
Device pixel can share a signal deteching circuit 140, and the timesharing of signal deteching circuit 140 detects the photosensitive of each sensor pixel
The electric signal that element 120 exports.
In addition, optical sensor also includes light source 300, light source 300 is located at the both sides of sensor pixel array, namely is located at
The both sides of chip 101.Light source 300 is used to provide illumination, such as can be LED.Light source 300 outwards projects light and is radiated at finger
The light of surface, finger surface reflection or scattering light source 300 enters sensor pixel array.Light source 300, which is so set, to be made
The image of formation becomes apparent from.
On the basis of above-described embodiment, optical sensor also includes protective layer 200, package substrate 400 and pcb board 500.
Protective layer 200 selects the preferable material of penetrance, such as can be glass, screen, sapphire or ceramic material.The optical sensing
When in use, target to be measured such as finger is positioned on the surface of the side of the remote sensor pixel array of protective layer 200 device,
Injected to from the light of finger print reflection through protective layer 200 on sensor pixel array.Optical sensor can be arranged on
The bottom of terminal, optical sensor can be not provided with protective layer 200, and protective layer 200 is replaced with the glass of terminal.What terminal was sent
Light can be irradiated on finger print, and the glass of the light penetration terminal of finger print reflection, which enters on optical sensor, to be sensed
Device pixel.
Pay attention to, above are only presently preferred embodiments of the present invention and institute's application technology principle.It will be appreciated by those skilled in the art that
The invention is not restricted to specific embodiment described here, can carry out for a person skilled in the art various obvious changes,
Readjust and substitute without departing from protection scope of the present invention.Therefore, although being carried out by above example to the present invention
It is described in further detail, but the present invention is not limited only to above example, without departing from the inventive concept, also
Other more equivalent embodiments can be included, and the scope of the present invention is determined by scope of the appended claims.
Claims (14)
- A kind of 1. sensor pixel, it is characterised in that including：Layer is collimated, the collimation layer is interior formed with obtical tunnel, and the obtical tunnel is used to receive in the light that target finger reflects The light of generally vertical direction；At least two photo-sensitive cells, for the light output electric signal received according to the obtical tunnel；Control unit, for controlling the quantity of the photo-sensitive cell gating；Signal deteching circuit, electrically connected with one or more photo-sensitive cells, the photo-sensitive cell for obtaining gating is defeated The electric signal gone out.
- 2. sensor pixel according to claim 1, it is characterised in that the collimation layer includes at least one layer of mask layer； The mask layer includes transmission region and light tight region.
- 3. sensor pixel according to claim 2, it is characterised in that the quantity of the mask layer is at least two layers；The transmission region of the adjacent mask layer staggers, and the projected area of the obtical tunnel of formation is less than the transmission region Area.
- 4. sensor pixel according to claim 1, it is characterised in that each corresponding optics of the photo-sensitive cell Tunnel.
- 5. sensor pixel according to claim 1, it is characterised in that also opened including load circuit, at least one first Close and at least one second switch；The load circuit is used to provide driving voltage or driving current；Each sensor pixel includes M row N row photo-sensitive cells, and wherein M and N are the integer more than or equal to 1；The first pole of photo-sensitive cell is electrically connected to the load circuit, each row institute by a first switch described in per a line The second pole for stating photo-sensitive cell is electrically connected to the input of signal deteching circuit by a second switch.
- 6. sensor pixel according to claim 5, it is characterised in that the signal deteching circuit includes：Integrating circuit, input are electrically connected to the second pole of the photo-sensitive cell by the second switch, output end with it is described Control unit electrically connects；Described control unit is used for the quantity that the photo-sensitive cell according to the output control of the integrating circuit gates.
- 7. sensor pixel according to claim 6, it is characterised in that the integrating circuit includes：Amplifier；Its input in the same direction is used to input the first reference voltage, the input of reverse input end and the integrating circuit Electrical connection, output end electrically connect with described control unit；Integrating capacitor, its first pole electrically connect with the reverse input end of the amplifier, the second pole and the output of the amplifier End electrical connection；First reset switch, it is in parallel with the integrating capacitor.
- 8. sensor pixel according to claim 7, it is characterised in that the signal deteching circuit also includes：Comparator, its first input end electrically connect with the output end of the amplifier, and the second input is used to input the second reference Voltage, output end are used for output switching activity signal.
- 9. sensor pixel according to claim 7, it is characterised in that the signal deteching circuit also includes：At least one second reset switch, the first end of each second reset switch and the second of the photo-sensitive cell extremely electric Connection, the second end ground connection of second reset switch.
- 10. sensor pixel according to claim 6, it is characterised in that the signal deteching circuit also includes compensation electricity Road, the compensation circuit electrically connect with the input of the integrating circuit, for injecting electric charge to integrating circuit to adjust integration Circuit electric charge cumulative amount.
- 11. sensor pixel according to claim 10, it is characterised in that the compensation circuit includes current source and the 3rd Switch, the current source are electrically connected by the described 3rd switch with the input of the integrating circuit.
- 12. sensor pixel according to claim 6, it is characterised in that if described control unit is used for the integration electricity The magnitude of voltage of signal of road output is less than the first given threshold, by controlling leading for the first switch and the second switch Logical, increase gates the quantity of the photo-sensitive cell of the signal deteching circuit electrical connection；If the letter of the integrating circuit output Number magnitude of voltage be more than the second given threshold, by controlling the first switch and the second switch to turn off, reduce gating institute State the quantity of the photo-sensitive cell of signal deteching circuit electrical connection.
- 13. a kind of optical sensor, it is characterised in that including sensor pixel array, the sensor pixel array includes more Sensor pixel described in individual any one of claim 1~12.
- 14. optical sensor according to claim 13, it is characterised in that also including light source, the light source is positioned at described The both sides of sensor pixel array.
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108833685A (en) * | 2018-05-29 | 2018-11-16 | Oppo广东移动通信有限公司 | Electronic device and its control method |
| CN109961023A (en) * | 2019-03-08 | 2019-07-02 | 昆山丘钛微电子科技有限公司 | Detect control circuit, fingerprint recognition circuit and optical finger print mould group |
| CN110161529A (en) * | 2019-06-10 | 2019-08-23 | 炬佑智能科技(苏州)有限公司 | TOF sensor and forming method thereof, NI Vision Builder for Automated Inspection |
| CN110321832A (en) * | 2019-06-28 | 2019-10-11 | 维沃移动通信有限公司 | Optics module and mobile terminal |
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1622117A (en) * | 2003-11-26 | 2005-06-01 | 佳能株式会社 | Signal processor and controlling method |
| JP2005217529A (en) * | 2004-01-27 | 2005-08-11 | Mitsumi Electric Co Ltd | Image detector |
| CN105335737A (en) * | 2015-12-02 | 2016-02-17 | 苏州迈瑞微电子有限公司 | Capacitive fingerprint sensor |
| CN105550664A (en) * | 2016-01-08 | 2016-05-04 | 上海箩箕技术有限公司 | Optical fingerprint sensor module |
| CN105608445A (en) * | 2016-01-29 | 2016-05-25 | 上海箩箕技术有限公司 | Optical fingerprint sensor, and manufacturing method and fingerprint acquisition method thereof |
| CN205758075U (en) * | 2016-04-27 | 2016-12-07 | 赵学利 | Emergent bullet access management and control cabinet |
| CN106372587A (en) * | 2016-08-29 | 2017-02-01 | 乐视控股（北京）有限公司 | Fingerprint identification method and device |
| CN106462765A (en) * | 2014-11-12 | 2017-02-22 | 深圳市汇顶科技股份有限公司 | Fingerprint sensors having in-pixel optical sensors |
| CN106773229A (en) * | 2017-03-10 | 2017-05-31 | 京东方科技集团股份有限公司 | A kind of fingerprint recognition display device and its driving method |
-
2017
- 2017-09-30 CN CN201710920202.1A patent/CN107563361B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1622117A (en) * | 2003-11-26 | 2005-06-01 | 佳能株式会社 | Signal processor and controlling method |
| JP2005217529A (en) * | 2004-01-27 | 2005-08-11 | Mitsumi Electric Co Ltd | Image detector |
| CN106462765A (en) * | 2014-11-12 | 2017-02-22 | 深圳市汇顶科技股份有限公司 | Fingerprint sensors having in-pixel optical sensors |
| CN105335737A (en) * | 2015-12-02 | 2016-02-17 | 苏州迈瑞微电子有限公司 | Capacitive fingerprint sensor |
| CN105550664A (en) * | 2016-01-08 | 2016-05-04 | 上海箩箕技术有限公司 | Optical fingerprint sensor module |
| CN105608445A (en) * | 2016-01-29 | 2016-05-25 | 上海箩箕技术有限公司 | Optical fingerprint sensor, and manufacturing method and fingerprint acquisition method thereof |
| CN205758075U (en) * | 2016-04-27 | 2016-12-07 | 赵学利 | Emergent bullet access management and control cabinet |
| CN106372587A (en) * | 2016-08-29 | 2017-02-01 | 乐视控股（北京）有限公司 | Fingerprint identification method and device |
| CN106773229A (en) * | 2017-03-10 | 2017-05-31 | 京东方科技集团股份有限公司 | A kind of fingerprint recognition display device and its driving method |
Non-Patent Citations (4)
| Title |
|---|
| JIUN-CHIEH LIU ET AL.: "A CMOS Micromachined Capacitive Sensor Array for Fingerprint Detection", 《 IEEE SENSORS JOURNAL》, vol. 12, no. 5, pages 1004 - 1010, XP011440782, DOI: 10.1109/JSEN.2011.2167748 * |
| ROBERTO PAOLESSE ET AL.: "Fluorescence Based Sensor Arrays", 《LUMINESCENCE APPLIED IN SENSOR SCIENCE 》, vol. 300, pages 139 * |
| 吴胜益等: "可视化门禁系统的研究与实现", 《电子设计工程》, vol. 23, no. 19, pages 110 - 112 * |
| 王孝伟等: "一种基于双行线形传感器的指纹重构算法", 《计算机测量与控制》, no. 10, pages 1373 - 1375 * |
Cited By (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108833685B (en) * | 2018-05-29 | 2020-12-22 | Oppo广东移动通信有限公司 | Electronic device and control method thereof |
| CN108833685A (en) * | 2018-05-29 | 2018-11-16 | Oppo广东移动通信有限公司 | Electronic device and its control method |
| US10970514B2 (en) | 2018-05-29 | 2021-04-06 | Boe Technology Group Co., Ltd. | Compensation structure and driving method thereof, display panel, and display device |
| WO2019228279A1 (en) * | 2018-05-29 | 2019-12-05 | 京东方科技集团股份有限公司 | Compensation structure and driving method thereof, display panel, and display device |
| CN109961023A (en) * | 2019-03-08 | 2019-07-02 | 昆山丘钛微电子科技有限公司 | Detect control circuit, fingerprint recognition circuit and optical finger print mould group |
| CN109961023B (en) * | 2019-03-08 | 2021-08-17 | 昆山丘钛生物识别科技有限公司 | Detection control circuit, fingerprint identification circuit and optical fingerprint module |
| US11500267B2 (en) | 2019-04-19 | 2022-11-15 | Beijing Boe Technology Development Co., Ltd. | Variable diaphragm and control method thereof |
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| US12100239B2 (en) | 2019-05-21 | 2024-09-24 | Huawei Technologies Co., Ltd. | Display component, display screen, and electronic device |
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| CN110321832A (en) * | 2019-06-28 | 2019-10-11 | 维沃移动通信有限公司 | Optics module and mobile terminal |
| US11881046B2 (en) | 2019-06-28 | 2024-01-23 | Vivo Mobile Communication Co., Ltd. | Optical module and mobile terminal |
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| CN112419971A (en) * | 2019-08-21 | 2021-02-26 | 三星显示有限公司 | Organic light emitting diode display device |
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| CN110579342A (en) * | 2019-10-25 | 2019-12-17 | 业成科技（成都）有限公司 | Glare measuring device and glare measuring method |
| CN112766024A (en) * | 2019-11-04 | 2021-05-07 | 上海箩箕技术有限公司 | Collimator, fingerprint identification device and fingerprint identification method thereof |
| CN112825548A (en) * | 2019-11-21 | 2021-05-21 | 格科微电子（上海）有限公司 | Method for reducing crosstalk of image sensor circuit |
| CN112825548B (en) * | 2019-11-21 | 2024-03-01 | 格科微电子（上海）有限公司 | Implementation method for reducing crosstalk of image sensor circuit |
| CN111352096A (en) * | 2020-04-26 | 2020-06-30 | 深圳市镭神智能系统有限公司 | Laser radar receiving system and laser radar |
| CN111352096B (en) * | 2020-04-26 | 2022-08-09 | 深圳市镭神智能系统有限公司 | Laser radar receiving system and laser radar |
| US11847854B2 (en) | 2020-06-26 | 2023-12-19 | Fingerprint Cards Anacatum Ip Ab | Optical fingerprint sensing system with common mode compensation |
| CN114303176A (en) * | 2020-06-26 | 2022-04-08 | 指纹卡安娜卡敦知识产权有限公司 | Optical fingerprint sensing system with common mode compensation |
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