CN107561007B - Thin film measuring device and method - Google Patents
Thin film measuring device and method Download PDFInfo
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- CN107561007B CN107561007B CN201610510441.5A CN201610510441A CN107561007B CN 107561007 B CN107561007 B CN 107561007B CN 201610510441 A CN201610510441 A CN 201610510441A CN 107561007 B CN107561007 B CN 107561007B
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Abstract
The invention discloses a thin film measuring device and a method, wherein the device comprises an illumination unit, a light source and a light source, wherein the illumination unit is used for providing an illumination light beam; a first imaging lens group including an objective lens for irradiating the illumination beam onto a film on a transparent substrate through the objective lens and collecting reflected beams of the film and the transparent substrate; the field diaphragm is conjugated with the film relative to the objective lens and is used for limiting crosstalk of reflected light on the lower surface of the transparent substrate to a measurement signal and obtaining more effective signals; the area array detector is used for detecting the light beam distribution after passing through the field diaphragm; and a processor for collecting the imaged angular spectrum information of the illumination beam with an incident angle greater than a critical incident angle and calculating the parameters of the film according to the angular spectrum information. The invention utilizes the low reflectivity of the transparent substrate and adopts a mode of adding a field diaphragm in an angular spectrum imaging light path to remove the reflected light on the lower surface of the transparent substrate so as to improve the signal-to-noise ratio of the reflected signal on the upper layer.
Description
Technical Field
The present invention relates to the field of integrated circuit manufacturing, and more particularly, to a thin film measurement apparatus and method.
Background
The characteristic parameter detection is widely applied to the industrial field, and the manufacturing process requires monitoring the quality of the characteristic parameter so as to ensure the product quality and improve the yield. The measurement of characteristic parameters is divided into two main categories: non-destructive measurements and destructive measurements. Non-destructive measurement using optical methods is the most commonly used method in feature parameter inspection, since destructive measurements can have a destructive effect on the feature parameter surface.
The existing equipment has a mature technology for detecting the characteristic parameters of the opaque substrate, and common detection means comprise reflectometer measurement and ellipsometer measurement. However, there are difficulties in detecting the characteristic parameters of the transparent substrate, which are typically TFT characteristic parameters, and the common film layers include SiO, because the reflected light from the transparent substrate interferes with the measurement signal2SiNx, a-Si, etc., in addition to the critical dimension CD. As shown in FIG. 1, incident light 80 entersAfter the light is emitted, because the light 81 reflected by the transparent substrate 82 and the light 84 reflected by the transparent TFT film 83 are reflected to the objective lens 85 and refracted by the objective lens 85 to the focal plane 86 behind the objective lens, if the light 81 reflected by the transparent substrate 82 is not removed, the light 81 reflected by the interface between the bottom of the transparent substrate 82 and the air will enter the measurement optical path through the transparent substrate 82 and the characteristic parameter, and will be superimposed on the signal light to form the background light, which will greatly affect the measurement method for calculating the characteristic parameter by measuring the reflectivity, and will remain to the transmission of the subsequent image and data, resulting in inaccurate measurement of the transparent TFT film 83. Therefore, this apparatus cannot perform film thickness measurement of a thin film having a transparent substrate. The ellipsometer with oblique incidence can theoretically avoid the interference of the background light of the transparent substrate, but the incidence angle range must be strictly controlled, and the collected reflection signal is relatively small.
The prior art also discloses a form that the illuminating light is incident at a small angle, so that the interference reflected light generated by a transparent substrate is reduced, and a form that the angle pavement is measured, wherein the variation range of the incident surface of the illuminating light provided by a light source is 360 degrees, a two-dimensional area array CCD is adopted in an optical element for detecting the reflected light intensity, and the detection result is transmitted to a processor, so that the detection result of the object to be detected is calculated in the processor. However, when the substrate of the object to be measured is transparent, the influence of the light reflected by the transparent substrate cannot be removed, which may cause interference with the measurement. Therefore, the above methods cannot completely eliminate the interference of the light reflected by the transparent substrate to the measurement, resulting in inaccurate measurement results.
Disclosure of Invention
The invention provides a thin film measuring device and method, which can eliminate interference light reflected by a transparent substrate so as to realize accurate measurement of a thin film with the transparent substrate.
To solve the above technical problem, the present invention provides a thin film measuring apparatus, comprising:
an illumination unit for providing an illumination beam;
the first imaging lens group comprises an objective lens, is used for irradiating the illumination light beam onto a film on a transparent substrate through the objective lens and collecting reflected light beams of the film and the transparent substrate;
a field stop, conjugate to the film with respect to the objective lens, for blocking reflected light reflected by the lower surface of the transparent substrate;
the area array detector is used for detecting the light beam distribution after passing through the field diaphragm;
and the processor is used for collecting the angle spectrum information of the imaging of the illuminating light beam with the incidence angle larger than a critical incidence angle and calculating the parameters of the film according to the angle spectrum information.
Preferably, the diameter of the field stop is β × L, wherein β is the magnification of the first imaging lens group, and L is the size of the illumination field formed by the illumination beam on the film.
Preferably, the critical incident angle θ is arcsin { n × sin [ arctan (L/2 h) ] }, where h is a thickness of the transparent substrate, n is a refractive index of the transparent substrate, and L is a size of the illumination field.
Preferably, the illumination unit includes a light source and an optical element unit by which the size of an illumination field of view incident on the film surface is controlled.
Preferably, the light source is a halogen lamp or a xenon lamp.
Preferably, the light source provides illumination beams comprising different wavelength bands.
Preferably, the optical element unit includes a filter, which uses a narrow band filter for selecting an illumination beam of a certain wavelength band.
Preferably, the optical element unit includes a collimator lens, a polarizer, and an incident diaphragm, which are sequentially disposed.
Preferably, the polarizer is a polarizing plate or a polarizing prism.
Preferably, the first imaging lens group includes a light splitting element, the light splitting element reflects the illumination light beam emitted from the illumination unit to the objective lens, and transmits the reflected light beam emitted from the objective lens, and the light splitting element is a right-angle beam splitter prism or a half mirror.
Preferably, the area array detector is located at a conjugate position of the back focal plane of the objective lens.
Preferably, a second imaging lens group is further arranged between the field diaphragm and the area array detector.
The invention also provides a film measuring method, according to the size of the illumination field of view incident on the surface of the film and the magnification of the imaging light path, a field diaphragm is arranged behind the imaging light path and used for blocking the reflected light of the illumination light beam with the incident angle larger than a critical incident angle incident on the surface of the film after being reflected by a transparent substrate bearing the film, then the angle spectrum information of the imaging of the illumination light beam with the incident angle larger than the critical incident angle is collected on the detection surface, and the parameter of the film is calculated according to the angle spectrum information.
Preferably, the diameter L1 of the field stop is β × L, which is the magnification of the imaging beam path, and L is the size of the illumination field.
Preferably, the critical incident angle θ is arcsin { n × sin [ arctan (L/2 h) ] }, where h is a thickness of the transparent substrate, n is a refractive index of the transparent substrate, and L is a size of the illumination field.
Preferably, the reflectivity of the film is calculated according to the angular spectrum information, the measured reflectivity is compared with the reflectivity obtained through modeling simulation of a Fresnel formula or an RCWA algorithm, and the modeling parameters meeting the conditions in the modeling simulation are obtained and are the parameters of the film.
Compared with the prior art, the method utilizes the low reflectivity of the transparent substrate, and adopts a mode of adding the field diaphragm in the angular spectrum imaging light path to remove the reflected light on the lower surface of the transparent substrate so as to improve the signal-to-noise ratio of the reflected signal of the upper layer film. And the back surface of the transparent substrate is not required to be coated with an extinction substance to eliminate the back reflection light of the transparent substrate, characteristic parameters are not required to be damaged, the method is simple and flexible, and can be automatically adapted to the transparent substrates of different materials and different thicknesses, so that the whole system has the advantages of simple structure, low cost, miniaturization, capability of carrying out nondestructive detection and the like.
Drawings
FIG. 1 is a schematic representation of light reflected by layers of a prior art film having a transparent substrate;
FIG. 2 is a schematic diagram of a measuring apparatus for a thin film having a transparent substrate according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a measurement of a film having a transparent substrate in accordance with one embodiment of the present invention.
Shown in FIG. 1: 80-incident light, 81-substrate reflected light, 82-transparent substrate, 83-transparent TFT film, 84-transparent film reflected light, 85-objective lens, 86-objective lens back focal plane,
Shown in FIGS. 2-3: 1-a light source, 2-a collimating lens, 3-a filter, 4-a polarizer, 5-a light splitting element, 8-an object to be detected, 9-a bearing table, 11-a lighting unit and 13-a processor;
91-transparent substrate, 92-film, 93-objective, 94-objective back focal plane, 951-first angular spectrum imaging lens, 952-second angular spectrum imaging lens, 96-area array detector, 97-substrate reflected light, 98-illumination visual field, 99-visual field diaphragm and 100-imaging front group.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below. It is to be noted that the drawings are in simplified form and are not to precise scale, which is provided for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
As shown in fig. 2 and fig. 3, the present invention discloses a measurement apparatus for a thin film 92 having a transparent substrate 91, which is used for measuring characteristic parameters of the thin film 92 having the transparent substrate 91, and mainly includes an illumination unit 11, a beam splitting element 5, an objective 93, and a carrying stage 9 for carrying an object 8 to be measured, that is, the thin film 92 having the transparent substrate 91, which are connected by an optical path, the measurement apparatus further includes a first angular spectrum imaging lens 951, a second angular spectrum imaging lens 952, an area array detector 96, and a processor 13, further, the present invention further includes a field stop 99, the field stop 99 is located at a conjugate position of the surface of the thin film 92, and has a diameter size of β × L for filtering out reflected light of the transparent substrate 91, wherein β is a magnification of an imaging front group 100, L is a size of an illumination field 98, and the imaging front group 100 includes the objective 93 and a first angular spectrum imaging lens 951.
Referring to fig. 2, the illumination unit 11 is for providing an illumination beam, and includes a light source 1, a collimator lens 2, a filter 3, a polarizer 4, and an incident diaphragm (not shown in the figure) arranged in this order along the light propagation direction. Wherein, the light source 1 adopts a halogen lamp or a xenon lamp, and optionally, the light source 1 provides illumination beams containing different wave bands. The filter 3 adopts a narrow-band filter for selecting the illumination light beam of a certain wave band, and can be selected from the narrow-band filters with the wavelengths of 780nm, 633nm, 550nm, 441nm or 360 nm. The polarizer 4 is a polarizer or a polarizing prism for transmitting polarized light with a specific polarization direction, and the incident diaphragm is used for adjusting the illumination field 98.
The light splitting element 5 is a right-angle light splitting prism or a semi-transparent half-mirror, and is configured to project the light beam in the illumination unit 11 to the objective lens 93.
The objective lens 93 is used to focus the light beam onto the film 92 with the transparent substrate 91 at an included angle, and collect the reflected light of the transparent substrate 91 and the film 92 to the position of the objective lens back focal plane 94. The first angular spectrum imaging lens 951 and the second angular spectrum imaging lens 952 are used for imaging the objective lens back focal plane 94 onto the area array detector 96, of course, the area array detector 96 is located on a conjugate plane of the objective lens back focal plane 94, a CCD or a CMOS is adopted, and has a good response to the transmission wavelength of the filter 3, the processor 13 is used for processing the image collected by the area array detector 96, collecting the imaged angular spectrum signal of the illumination light with the incident angle larger than a critical incident angle on the surface of the film 92, and analyzing and calculating the film parameter, such as the film thickness, according to the angular spectrum information.
The film 92 with the transparent substrate 91 is arranged on a carrier 9, and the carrier 9 can move the film 92 to a measuring position.
With continued reference to fig. 2-3, the present invention further provides a method for measuring a thin film 92 having a transparent substrate 91, comprising:
step 1: an incident diaphragm is arranged in an illumination unit 11 of the measuring device with a thin film 92 of a transparent substrate 91, and the size of an illumination field 98 is controlled;
and 3, collecting an angle spectrum signal of the image of the illumination light with the incident angle larger than the critical incident angle theta on the surface of the film 92 in the image of the detection surface, and analyzing and calculating film parameters according to the angle spectrum information, for example, solving the film thickness, wherein the critical incident angle theta is arcsin { n × sin [ arctan (L/2 h) ] }, h is the thickness of the transparent substrate 91, and n is the refractive index of the transparent substrate 91.
As can be seen from fig. 3, the field stop 99 is added in the present invention, so that after the illumination light larger than the critical incident angle θ in the illumination field 98 is reflected by the lower transparent substrate 91, the substrate reflected light 97 is blocked by the field stop 99, thereby removing the interference signal.
The determination principle of the critical incident angle theta is as follows:
where n is the refractive index of the transparent substrate 91, h is the thickness of the transparent substrate 91, L is the size of the illumination field 98, NA is the signal of interference from light reflected by the transparent substrate 91 in the area that cannot be blocked by the field stop 99, and θ1Is the angle of refraction incident into the transparent substrate 91, the critical angle of incidence θ is arcsin { n sin [ arctan (L/2 h)]}。
The collected angular spectrum signals in the effective area, namely the angular spectrum signals of the illuminating light with the incident angle larger than the critical incident angle on the surface of the film 92, are compared with the simulation data, and the characteristic parameter information is obtained through inverse solution. Specifically, the reflectivity of the film 92 is calculated according to the collected angular spectrum information, the measured reflectivity is compared with the reflectivity obtained through modeling simulation of a Fresnel formula or an RCWA algorithm, and the modeling parameters in the modeling simulation which meet the conditions are obtained, namely the characteristic parameters of the film. Or finding out the parameter corresponding to the sample closest to the measured reflectivity from a database obtained by pre-calculation, namely the characteristic parameter of the film.
In summary, the present invention utilizes the low reflectivity of the transparent substrate 91 and adds the field stop 99 to the angular spectrum imaging optical path to remove the reflected light from the lower surface of the transparent substrate 91, so as to improve the signal-to-noise ratio of the upper layer reflected signal. Taking the diameter of the illumination field 98 as 50um, the thickness of the transparent substrate 91 as 700um and the magnification as 1 as an example, when the aperture diaphragm 99 can strictly filter the reflected light outside the measurement light spot, the measurable angle is calculated as 3 degrees according to the formulas (1) and (2), namely, the angular spectrum information beyond 3 degrees on the objective lens back focal plane 94 can be used. The invention is not limited to the form that the illumination optical unit and the detection optical unit are independent (oblique incidence), the illumination and the detection can share the optical unit, so that the incidence angle range is larger, the detection surface in the measurement light path can collect more reflected light signals, and the measurement precision can be improved. According to the invention, the back reflection light of the transparent substrate 91 is eliminated without coating an extinction substance on the back surface of the transparent substrate 91, characteristic parameters are not damaged, the method has simple and flexible steps, and can be automatically adapted to transparent substrates of different materials and different thicknesses, so that the whole system has the advantages of simple structure, low cost, miniaturization, capability of carrying out nondestructive detection and the like.
It will be apparent to those skilled in the art that various changes and modifications may be made in the invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (17)
1. A thin film measuring device, comprising:
an illumination unit for providing an illumination beam;
the first imaging lens group comprises an objective lens, is used for irradiating the illumination light beam onto a film on a transparent substrate through the objective lens and collecting reflected light beams of the film and the transparent substrate;
a field stop, conjugate to the film with respect to the objective lens, for blocking reflected light reflected by the lower surface of the transparent substrate;
the area array detector is used for detecting the light beam distribution after passing through the field diaphragm;
and the processor is used for acquiring the imaging angular spectrum information of the illuminating light beam with the incident angle larger than a critical incident angle, and calculating the parameters of the film according to the angular spectrum information, wherein when the incident angle is the critical incident angle, the field diaphragm just shields the reflected light reflected by the lower surface of the transparent substrate.
2. The thin film measurement device of claim 1, wherein the field stop has a diameter size of β x L, wherein β is the magnification of the first set of imaging mirrors and L is the size of the illumination field formed by the illumination beam on the thin film.
3. The thin film measurement device of claim 2, wherein the critical incident angle θ is arcsin { n x sin [ arctan (L/2 h) ] }, where h is a thickness of the transparent substrate, n is a refractive index of the transparent substrate, and L is a size of the illumination field.
4. The film measuring apparatus according to claim 1, wherein the illumination unit includes a light source and an optical element unit by which a size of an illumination field incident to the film surface is controlled.
5. The thin film measuring device as claimed in claim 4, wherein the light source is a halogen lamp or a xenon lamp.
6. The thin film measurement device of claim 4, wherein the light source provides illumination beams comprising different wavelength bands.
7. The thin film measuring device as claimed in claim 6, wherein the optical element unit includes a filter using a narrow band filter for selecting an illumination beam of a certain wavelength band.
8. The thin film measuring device as claimed in claim 4 or 7, wherein the optical element unit includes a collimator lens, a polarizer and an incident diaphragm arranged in this order.
9. The film measuring apparatus as claimed in claim 8, wherein said polarizer is a polarizing plate or a polarizing prism.
10. The thin film measuring device as claimed in claim 1, wherein said first imaging lens group includes a beam splitter for reflecting the illumination beam emitted from said illumination unit to said objective lens and transmitting the reflected beam emitted from said objective lens, said beam splitter being a rectangular beam splitter or a half mirror.
11. The thin film measurement device of claim 1, wherein the area array detector is located at a conjugate position of the back focal plane of the objective lens.
12. The thin film measurement apparatus of claim 1, wherein a second imaging lens group is further disposed between the field stop and the area array detector.
13. A film measuring method is characterized in that a field diaphragm is configured behind an imaging light path according to the size of an illumination field incident to the surface of a film and the magnification of the imaging light path and used for blocking reflected light of an illumination light beam with an incident angle larger than a critical incident angle, which is reflected by a transparent substrate bearing the film, incident to the surface of the film, then collecting angle spectrum information of imaging of the illumination light beam with the incident angle larger than the critical incident angle on a detection surface, and calculating parameters of the film according to the angle spectrum information, wherein when the incident angle is the critical incident angle, the field diaphragm just blocks the reflected light reflected by the lower surface of the transparent substrate.
14. The thin film measurement method of claim 13, wherein a diameter L1 of the field stop is β x L is a magnification of the imaging beam path, and L is a size of the illumination field.
15. The thin film measuring method according to claim 13 or 14, wherein the critical incident angle θ is arcsin { n × sin [ arctan (L/2 h) ] }, where h is a thickness of the transparent substrate, n is a refractive index of the transparent substrate, and L is a size of the illumination field.
16. The film measuring method as claimed in claim 13, wherein the reflectance of the film is calculated based on the angular spectrum information, and the measured reflectance is compared with a reflectance obtained through a simulation of a fresnel formula or an RCWA algorithm modeling, to obtain a condition that a modeling parameter in the modeling simulation is a parameter of the film.
17. The film measuring method according to claim 13, wherein the reflectance of the film is calculated based on the angular spectrum information, and a parameter corresponding to a sample closest to the measured reflectance is found in a database obtained by the pre-calculation as the parameter of the film.
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| CN109883553B (en) * | 2019-03-14 | 2020-01-21 | 上海精测半导体技术有限公司 | Polarization measuring device and polarization measuring method |
| CN110569824A (en) * | 2019-09-18 | 2019-12-13 | 成都费恩格尔微电子技术有限公司 | optical structure for collecting biological characteristic graph and preparation method and application thereof |
| CN112945111A (en) * | 2021-02-22 | 2021-06-11 | 长江存储科技有限责任公司 | Metrology system and method for thin film stacks |
| CN113125437B (en) * | 2021-04-22 | 2023-07-18 | 华中科技大学 | Detection system and method based on optical interference scattering microscopy |
| CN114910007B (en) * | 2022-05-30 | 2023-11-21 | 机械科学研究院浙江分院有限公司 | Integrated film thickness measuring system and method for integrated circuit manufacturing |
| CN114726995B (en) * | 2022-06-09 | 2022-11-08 | 深圳中科飞测科技股份有限公司 | Detection method and detection system |
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