CN112945111A - Metrology system and method for thin film stacks - Google Patents
Metrology system and method for thin film stacks Download PDFInfo
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- CN112945111A CN112945111A CN202110197927.9A CN202110197927A CN112945111A CN 112945111 A CN112945111 A CN 112945111A CN 202110197927 A CN202110197927 A CN 202110197927A CN 112945111 A CN112945111 A CN 112945111A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
Abstract
The invention discloses a measuring system and a measuring method for film lamination. According to the measuring system for the film lamination provided by the embodiment of the invention, the film lamination comprises a film layer to be measured and a film layer not to be measured, the measuring system comprises an emitting device, a first measuring device and a second measuring device, wherein the emitting device is used for emitting a detection signal to the film lamination, and the detection signal passes through the film lamination to obtain a first measuring signal; the first measurement signal comprises a second measurement signal obtained through the thin film layer to be measured and one or more third measurement signals obtained through the thin film layer not to be measured; a blocking device, located on the transmission path of the third measurement signal, for blocking the third measurement signal; and the receiving device is used for receiving the second measurement signal, wherein the measurement system obtains the measurement thickness of the thin film layer to be measured according to the second measurement signal. The measuring system and the measuring method for the film lamination have the advantages of high measuring efficiency and good accuracy.
Description
Technical Field
The present invention relates to the field of semiconductor manufacturing technologies, and in particular, to a system and a method for measuring a thin film stack.
Background
With the development of thin film technology, thin films may be applied to integrated circuits, micro thin film capacitors, three-dimensional memories, and the like. In the process of preparing the thin film, the thickness of the thin film is a very important parameter, and is directly related to whether the element applying the thin film can work normally. Therefore, it is necessary to precisely measure the thickness of the thin film in the process of manufacturing the thin film to ensure the accuracy of the thickness of the thin film.
In the prior art, ellipsometry is generally used to measure the thickness of various films. The basic principle of ellipsometry for measuring the thickness of a thin film is as follows: linearly polarized light is used as incident light to irradiate the surface of the film to be measured; linearly polarized light is converted into elliptically polarized light after being reflected by the surface of the film to be measured; the elliptically polarized light is emitted as the outgoing light. The existing ellipsometry method utilizes the property that linearly polarized light is converted into elliptically polarized light after being reflected by the surface of the film to be measured, obtains the optical constant of the film to be measured, and further obtains a measurement result. With the number of iterative layers in the device increasing, the corresponding result is more and more complex, and the measurement of the surface film thickness mainly faces the problems that the measurement result is difficult to obtain a global optimal solution, the measurement time is long, and the like. Particularly, when a thin film with a large thickness is measured, the conventional measuring system and method are difficult to provide a reliable measuring result.
Accordingly, it is desirable to have a new metrology system and method for thin film stacks that overcomes the above-described problems.
Disclosure of Invention
In view of the above problems, the present invention provides a new system and method for measuring a thin film stack, which has high measurement efficiency and high accuracy.
According to an aspect of the present invention, there is provided a measurement system for a thin film stack, the thin film stack including a thin film layer to be measured and a thin film layer not to be measured, the measurement system comprising an emitting device for emitting a detection signal to the thin film stack, the detection signal passing through the thin film stack to obtain a first measurement signal; the first measurement signal comprises a second measurement signal obtained by passing through the thin film layer to be measured and one or more third measurement signals obtained by passing through the non-thin film layer to be measured; a blocking device, located on the transmission path of the third measurement signal, for blocking the third measurement signal; and the receiving device is used for receiving the second measuring signal, wherein the measuring system obtains the measured thickness of the thin film layer to be measured according to the second measuring signal.
Preferably, the receiving device is located on a transmission path of the first measurement signal; the blocking means is located between the thin film stack and the receiving means.
Preferably, the detection signal is linearly polarized light, and the first measurement signal is elliptically polarized light.
Preferably, the measurement system further includes a processing device connected to the receiving device to obtain the second measurement signal, perform spectrum fitting on the second measurement signal, and calculate to obtain a global optimal solution as the measured thickness of the thin film layer to be measured.
Preferably, the transmitting device includes an emitter for emitting a detection signal to the thin film stack, and the detection signal is reflected on the thin film stack to obtain the first measurement signal.
Preferably, the blocking device comprises a first blocking plate located on a transmission path of the one or more third measurement signals for reflecting and/or absorbing the third measurement signals.
Preferably, the blocking device comprises a second blocking plate, located on the transmission path of the first measurement signal, for blocking at least a part of the first measurement signal; and the moving arm is connected with the second blocking plate and used for moving the second blocking plate, wherein when the second blocking plate is positioned at different positions, different parts of the first measuring signals are blocked.
Preferably, the emitting device is configured to emit a detection signal to a detection position of the thin film stack, where the detection signal is reflected at the detection position to obtain the first measurement signal; the measuring system also comprises an adjusting device which is connected with the transmitting device and used for adjusting the posture of the transmitting device; the adjusting device adjusts the position of the detection position by adjusting the posture of the transmitting device.
According to another aspect of the present invention, a measurement method for a thin film stack is provided, which includes transmitting a detection signal to the thin film stack to obtain a second measurement signal reflected by a thin film layer to be measured and a third measurement signal reflected by a thin film layer not to be measured; blocking transmission of the third measurement signal; and acquiring the second measurement signal, and obtaining the measurement thickness of the thin film layer to be measured according to the second measurement signal.
Preferably, the detection signal is linearly polarized light, and the second measurement signal is elliptically polarized light; the obtaining of the measured thickness of the thin film layer to be measured according to the second measurement signal includes: and performing spectrum fitting on the second measurement signal, and calculating to obtain a global optimal solution as the measurement thickness of the thin film layer to be measured.
According to the measuring system and method for the film lamination, provided by the embodiment of the invention, the measuring signal fed back by the film layer not to be measured is blocked, the interference of irrelevant signals is avoided, and the measuring accuracy and precision are improved.
According to the measuring system and method for the film lamination, provided by the embodiment of the invention, the measuring signal fed back by the film layer not to be measured is blocked, the data processing amount is reduced, and the measuring efficiency is improved.
According to the measuring system and method for the film lamination, the detection position and/or the blocked measuring signal can be adjusted according to the actual measuring requirement, so that the measurement of different measuring objects is realized, and the real-time detection can be realized.
Drawings
The above and other objects, features and advantages of the present invention will become more apparent from the following description of the embodiments of the present invention with reference to the accompanying drawings, in which:
FIG. 1 shows a schematic diagram of a thin film measurement principle according to the prior art;
FIG. 2 shows a schematic diagram of measurement results according to the prior art;
FIG. 3 is a schematic diagram of a metrology system for thin film stacks, according to a first embodiment of the present invention;
FIG. 4 is a schematic view illustrating a measurement principle of a measurement system for a thin film stack according to a second embodiment of the present invention;
FIG. 5 is a flow chart of a method for metrology of a thin film stack according to a second embodiment of the present invention;
fig. 6 is an equivalent diagram illustrating measurement results of a measurement system and method for a thin film stack according to an embodiment of the present invention.
Detailed Description
The inventor finds that the measurement of the surface film thickness mainly faces the problems that the measurement result is difficult to obtain a global optimal solution, the measurement time is long, and the like. Particularly, when a thin film (ultra-thick film) with a large thickness is measured, the conventional measurement system and method are difficult to provide a reliable measurement result.
In particular, in the 3D NAND process, Critical Dimension (CD) in various processes, such as the thickness of a thin film, is very important, and it is necessary to monitor the process condition through in-line metrology. At present, an ellipsometry method is generally adopted to measure the thickness of various films, and compared with a conventional method, the method is a spectrum measurement method for obtaining an optical constant of a sample by using the property that linearly polarized light is converted into elliptically polarized light after being reflected by the sample (a film to be measured), has the advantages of high resolution, high measurement speed and no damage to the sample, and is widely applied to semiconductor measurement. In one embodiment, as shown in fig. 1, polarized light is irradiated onto a sample 2 as an incident light 1, and the incident light 1 is reflected by the sample 2 to obtain a reflected light 3. And (4) performing spectrum fitting on the reflected light 3, and calculating to obtain the thickness of the sample 2.
As the number of layers of (device) iteration is higher and higher, the film (film) on the corresponding pad (monitor pad) is more and more complex, and the measurement of the thickness of the surface film mainly faces the following problems:
1) and the sensitivity (sensitivity) of the upper film is concentrated in the UV (ultraviolet) band. With the stack of films (film stack) superimposed, the tips (peak) that collect into the UV band of the spectrum are very dense, as shown, for example, in fig. 2. Fig. 2 (a), (b), (c), and (d) show the collected spectra in different embodiments, respectively. When spectrum fitting is carried out on the spectrum with dense tips, a local minimum solution is easy to obtain, the local minimum solution is not a global optimum solution, and an error result is easy to obtain.
2) As the stack of films increases, the computation time required for spectral fitting increases dramatically, requiring more powerful servers for spectral fitting, which results in increased time for inline measurements.
In order to solve the above problems, the present invention provides a measurement system and method for film lamination, which block the spectrum of the non-measurement portion and only collect and process the spectrum feedback of the film to be measured, thereby improving the measurement accuracy of the film to be measured.
Various embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. Like elements in the various figures are denoted by the same or similar reference numerals. For purposes of clarity, the various features in the drawings are not necessarily drawn to scale. Moreover, certain well-known elements may not be shown in the figures.
The following detailed description of embodiments of the present invention is provided in connection with the accompanying drawings and examples. In the following description, numerous specific details of the invention, such as structure, materials, dimensions, processing techniques and techniques of components, are set forth in order to provide a more thorough understanding of the invention. However, as will be understood by those skilled in the art, the present invention may be practiced without these specific details.
It will be understood that when a layer, region or layer is referred to as being "on" or "over" another layer, region or layer in describing the structure of the component, it can be directly on the other layer, region or layer or intervening layers or regions may also be present. Also, if the component is turned over, one layer or region may be "under" or "beneath" another layer or region.
Fig. 3 is a schematic structural diagram of a measurement system for thin film stack according to an embodiment of the present invention. As shown in fig. 3, a measurement system for a thin film stack according to an embodiment of the present invention includes a transmitting device 10, a receiving device 20, and a blocking device 30.
Specifically, the thin film stack includes a thin film layer to be tested and a thin film layer not to be tested. Optionally, the thin film stack comprises a plurality of thin film layers. At least one of the thin film layers is a thin film layer to be tested, and the rest of the thin film layers are non-thin film layers to be tested. Optionally, the thin film stack comprises a plurality of thin film layers stacked sequentially from bottom to top. Optionally, the uppermost thin film layer of the thin film stack is a thin film layer to be tested. Optionally, the thin film layers to be tested include at least one thin film layer on top of the thin film stack. Optionally, the thin film stack under measurement is an ultra-thick thin film.
The emitting means 10 is used to emit a detection signal to the thin-film stack. The detection signal passes through the film stack to obtain a first measurement signal. The first measuring signal comprises a second measuring signal obtained through the thin film layer to be measured and a third measuring signal obtained through the thin film layer not to be measured. Optionally, the third measurement signal is multiple, and includes multiple signals reflected by multiple thin film layers not to be measured, for example, each of the multiple thin film layers not to be measured reflects a respective third measurement signal. Optionally, the detection signal includes at least one selected from a light signal, an acoustic wave signal, and the like.
The blocking device 30 is located on the transmission path of the third measurement signal and is used for blocking the third measurement signal. Optionally, the blocking device 30 blocks the transmission of the third measurement signal by reflection, absorption, and the like. The blocking device 30 is used for blocking the third measurement signal, for example, by absorbing the third measurement signal, or by reflecting the third measurement signal to other directions (i.e., blocking the original transmission path of the third measurement signal). In another aspect, the blocking device 30 is located on the transmission path of the non-second measurement signal, and does not block the transmission of the second measurement signal.
In an alternative embodiment of the invention, the blocking means comprises a first blocking plate. The first blocking plate is positioned on the transmission path of one or more third measuring signals and used for reflecting and/or absorbing the third measuring signals.
In an alternative embodiment of the invention, the blocking means comprises a second blocking plate and a moving arm. The second blocking plate is positioned on the transmission path of the first measuring signal and used for blocking at least one part of the first measuring signal. The moving arm is connected with the second blocking plate and used for moving the second blocking plate. The second blocking plate is located at different positions and blocks different parts of the first measuring signals.
The receiving device 20 is used for receiving the second measurement signal. The measurement system obtains the measured thickness of the thin film layer to be measured according to the second measurement signal (received by the receiving device 20).
In an alternative embodiment of the invention, the blocking means 30 comprise a blocking plate. The blocking plate is located on the transmission path of the third measurement signal and is used for reflecting (blocking on the original path is realized by changing the propagation path of the third measurement signal) and/or absorbing the third measurement signal.
In an alternative embodiment of the present invention, the receiving device 20 is located on the transmission path of the first measurement signal. The blocking means 30 is located between (on the third signal transmission path of) the thin-film stack and the receiving means 20. Optionally, the receiving device 20 is located on the transmission path of the first measurement signal, and its receiving range covers the whole first measurement signal (i.e. the receiving device 20 is located on the transmission path of the third measurement signal when the blocking device 30 is not present), so as to ensure the integrity of the received data.
In an alternative embodiment of the present invention, the metrology system for thin film stacks further comprises a processing device. The processing device is connected to the receiving device 20 for receiving the second measurement signal, and calculating the measured thickness of the thin film layer to be measured according to the second measurement signal. Optionally, the processing device is connected to the transmitting device 10 for receiving the detection signal, and connected to the receiving device 20 for receiving the second measurement signal, and calculating to obtain the measured thickness of the thin film layer to be measured according to the detection signal and the second measurement signal. The processing device obtains the thickness information of the thin film layer to be measured, for example, by comparing the changes (amplitude ratio and phase difference) in the polarization states of the detection signal and the second measurement signal.
In the above embodiments of the present invention, the blocking device is disposed on the transmission path of the third measurement signal (i.e. below the receiving device), and can block the spectrum information reflected by the non-to-be-measured thin film layer (e.g. the bottom layer), so as to effectively shield the information of the non-to-be-measured thin film layer, reduce the influence of the non-to-be-measured thin film layer on the measurement, and improve the measurement accuracy and measurement precision.
Fig. 4 is a schematic view illustrating a measurement principle of a measurement system for a thin film stack according to a second embodiment of the present invention. As shown in fig. 4, in the metrology system for a thin film stack according to the second embodiment of the present invention, the thin film stack includes a first thin film layer 41, a second thin film layer 42, and a third thin film layer 43 stacked in sequence on a substrate 40. Wherein, the first thin film layer 41 is a non-to-be-measured thin film layer; the second film layer 42 and the third film layer 43 are film layers to be measured.
The transmitting means comprises a transmitter (source) 11. The transmitter 11 is used to transmit a detection signal 50 to the thin film stack (i.e., the first thin film layer 41, the second thin film layer 42, the third thin film layer 43). The detection signal 50 is reflected on the film stack resulting in a first measurement signal 51. The transmitter 11 is for example a polarizer and the transmitted detection signal 50 is for example linearly polarized light.
The receiving means comprises a detector (detector) 21. The detector 21 is configured to receive the second measurement signal 52. The second measurement signal 52 is, for example, elliptically polarized light.
The blocking means comprise a blocking plate 31. The blocking plate 31 is located on the transmission path of the third measurement signal 53, and is used for blocking the third measurement signal 53.
In the following embodiments, the thickness of the second film layer 42 and the third film layer 43 is measured according to the following measurement principles:
the emitter 11 emits linearly polarized light toward the thin film stack including the thin film layers to be measured (i.e., the second thin film layer 42 and the third thin film layer 43 in the drawing). Linearly polarized light is used as the detection signal 50.
Linearly polarized light impinges on the thin film stack and is reflected. The linearly polarized light is converted into elliptically polarized light after being reflected by the film lamination. The detection signal (linearly polarized light) 50 is irradiated on the film stack and reflected to obtain a first measurement signal (elliptically polarized light) 51.
In particular, the detection signal 50 is refracted and reflected at the upper and/or lower surface of each thin film layer. The detection signal 50 is irradiated onto the upper surface of the third thin film layer 43, refracted, and irradiated onto the lower surface of the third thin film layer 43 (the upper surface of the second thin film layer 42).
The detection signal 50 irradiated on the lower surface of the third thin film layer 43 (the upper surface of the second thin film layer 42) is simultaneously reflected and refracted, the reflected detection signal 50 is converted into elliptically polarized light (the second measurement signal 52), and the refracted detection signal 50 is irradiated on the lower surface of the second thin film layer 42 (the upper surface of the first thin film layer 51).
The detection signal 50 irradiated on the lower surface of the second thin-film layer 42 (the upper surface of the first thin-film layer 41) is simultaneously reflected and refracted, the reflected detection signal 50 is converted into elliptically polarized light (the second measurement signal 52), and the refracted detection signal 50 is irradiated on the lower surface of the first thin-film layer 42 (the upper surface of the substrate 40).
The detection signal 50 irradiated on the lower surface of the first film layer 41 is reflected, and the reflected detection signal 50 is converted into elliptically polarized light (third measurement signal 53).
It should be noted that the second measurement signal 52 and the third measurement signal 53 are distinguished based on the division of the thin film layers (thin film layer to be measured and non-thin film layer to be measured).
The blocking plate 31 is located on the transmission path of the third measurement signal 53, and is used for blocking the third measurement signal 53. The third measurement signal 53 is blocked and is not transmitted to the detector 21.
The detector 21 is located on a transmission path of the first measurement signal 51, and is used for receiving the first measurement signal 51. In order to ensure the integrity of the acquired data, the detector 21 is located on all transmission paths of the second measurement signal 52 and the third measurement signal 53. However, the third measurement signal 53 is blocked by the blocking plate 31 and cannot be transmitted to the detector 21. The second measurement signal 52 is not blocked and can be transmitted to the detector 21. Thus, it can be said that the detector 21 is configured to receive the second measurement signal 52. The second measurement signal 52 received by the detector 21 reflects the thickness of the thin film layers to be measured (i.e., the second thin film layer 42 and the third thin film layer 43 in the figure). The second measurement signal reflected by the lower surface of the third thin film layer 43 can reflect the thickness of the third thin film layer 43. The second measurement signal reflected by the lower surface of the second thin film layer 42 can reflect the thickness of the second thin film layer 43.
In an alternative embodiment of the present invention, the metrology system for thin film stacks further comprises a processing device (not shown). The processing device is connected to the detector 21 to obtain a second measurement signal 52, and performs an operation process according to the second measurement signal 52 to obtain the thicknesses of the second thin film layer 42 and the third thin film layer 43, respectively. Optionally, the processing device performs spectrum fitting on the second measurement signal 52 to obtain the thickness of the thin film layer to be measured. Optionally, the processing device uses a global optimal solution obtained by performing spectrum fitting on the second measurement signal 52 as the thickness of the thin film layer to be measured.
In the above embodiments of the present invention, the variation of the spectrum fitting is reduced, the fitting model (model) is simplified, the time for the spectrum fitting and the online metrology is reduced, and the measurement per unit time (through put) is improved.
In an alternative embodiment of the invention, the blocking means comprises a blocking aperture (blocking aperture) component. The blocking aperture member is located on the transmission path of the third measurement signal 53 for blocking the third measurement signal.
In an alternative embodiment of the invention, the blocking means comprises a blocking plate and a moving arm. The blocking plate is located on a transmission path of the first measurement signal and used for blocking at least one part of the first measurement signal. The moving arm is connected with the blocking plate and used for moving the blocking plate. When the blocking plate is located at different positions, the first measuring signals of different parts are blocked. Specifically, the blocking device is further described on the basis of the second embodiment. As shown in fig. 4, the second embodiment describes the device and principle for measuring the third film layer 43 and the second film layer 42. In the second embodiment (fig. 4), the moving arm (not shown) drives the blocking plate 31 to move, so as to adjust the measurement object. For example, the barrier plate 31 is moved to the left by the moving arm, so that the barrier plate 31 simultaneously blocks the third measurement signal 53 reflected from the lower surface of the first thin film layer 41 and the second measurement signal 52 reflected from the lower surface of the second thin film layer 42. At this time, the detector 21 can only receive the second measurement signal 52 reflected by the lower surface of the third thin film layer 43. The measurement system processes the second measurement signal 52 reflected by the lower surface of the third thin film layer 43 to obtain the measured thickness of the third thin film layer 43.
In an alternative embodiment of the present invention, the metrology system for thin film stacks further comprises an adjustment device. The emitting device is used for emitting a detection signal to the detection position of the film lamination, and the detection signal is reflected at the detection position to obtain a first measurement signal. The adjusting device is connected with the transmitting device and used for adjusting the posture of the transmitting device, and the adjusting device adjusts the position of the detection position by adjusting the posture of the transmitting device. Optionally, the adjusting device is connected to the receiving device, and is configured to adjust the posture of the receiving device so that the receiving device receives the first measurement signal reflected by the detection position. Optionally, the adjusting device is connected to the blocking device and is configured to adjust a posture of the blocking device, and the adjusting device blocks at least a portion of the first measurement signal by adjusting the posture of the blocking device.
In the above-described embodiments of the present invention,
the detection position and/or the blocked measurement signal can be adjusted according to the actual measurement requirement (such as the thickness of the film layer to be measured), so that the measurement of different measurement objects (such as the film layer to be measured) is realized, and the real-time detection can be realized.
Fig. 5 shows a method flowchart of a metrology method for thin film stacks according to a second embodiment of the invention. As shown in fig. 5, the second measurement method according to the embodiment of the invention includes the following steps:
step S501: transmitting a detection signal to the film lamination to obtain a second measurement signal reflected by the film layer to be detected and a third measurement signal reflected by the film layer not to be detected;
and transmitting a detection signal to the film lamination comprising the film layer to be detected and the film layer not to be detected. The detection signal is reflected by the thin film layer to be detected to obtain a second measurement signal. The detection signal is reflected by the non-to-be-detected thin film layer to obtain a third measurement signal. Optionally, the second measurement signal and the third measurement signal are collectively referred to as the first measurement signal.
Step S502: blocking transmission of the third measurement signal;
the transmission of the third measurement signal is blocked. For example, the third measurement signal is absorbed, or the third measurement signal is reflected to the other direction (block the original transmission direction).
Step S503: and acquiring a second measurement signal, and obtaining the measurement thickness of the thin film layer to be measured according to the second measurement signal.
And acquiring a second measurement signal, and calculating according to the second measurement signal to obtain the measurement thickness of the thin film layer to be measured.
It should be noted that, the above reference numerals of the steps are only used to distinguish different steps, and there is no requirement for a sequential order.
In the above embodiments of the present invention, the signal reflected from the non-to-be-measured thin film layer is shielded, so that the measurement accuracy is increased, and the measurement period (cycle time) is also reduced.
In an alternative embodiment of the present invention, the detection signal is linearly polarized light, and the second measurement signal is elliptically polarized light. Obtaining the measurement thickness of the thin film layer to be measured according to the second measurement signal comprises: and carrying out spectrum fitting on the second measurement signal, and calculating to obtain a global optimal solution as the measurement thickness of the thin film layer to be measured.
Fig. 6 is an equivalent diagram illustrating measurement results of a measurement system and method for a thin film stack according to an embodiment of the present invention. The detection signal is emitted for the thin film stack shown on the left side in fig. 6. The detection signal is reflected by the thin film stack to obtain a first measurement signal. At least a portion of the first measurement signal (the third measurement signal) is blocked. And obtaining the measured thickness of the thin film layer to be measured according to the obtained unblocked first measurement signal (namely, a second measurement signal reflected by the thin film layer to be measured shown on the right side in the figure). That is, although the detection signal is emitted to the thin film stack, only the signal fed back by the thin film layer to be measured is actually acquired, and the interference of the thin film layer not to be measured is avoided.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
While embodiments in accordance with the invention have been described above, these embodiments are not intended to be exhaustive or to limit the invention to the precise embodiments described. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the invention and the practical application, to thereby enable others skilled in the art to best utilize the invention and various embodiments with various modifications as are suited to the particular use contemplated. The invention is limited only by the claims and their full scope and equivalents.
Claims (10)
1. A metrology system for a thin film stack, the thin film stack comprising a thin film layer to be measured and a thin film layer not to be measured, the metrology system comprising:
the transmitting device is used for transmitting a detection signal to the thin film lamination, and the detection signal passes through the thin film lamination to obtain a first measurement signal; the first measurement signal comprises a second measurement signal obtained by passing through the thin film layer to be measured and one or more third measurement signals obtained by passing through the non-thin film layer to be measured;
a blocking device, located on the transmission path of the third measurement signal, for blocking the third measurement signal; and
receiving means for receiving the second measurement signal,
and the measuring system obtains the measured thickness of the thin film layer to be measured according to the second measuring signal.
2. A measurement system for thin film stacks according to claim 1, wherein said receiving means is located on a transmission path of said first measurement signal;
the blocking means is located between the thin film stack and the receiving means.
3. A measurement system for a thin film stack as claimed in claim 1, wherein the detection signal is linearly polarized light and the first measurement signal is elliptically polarized light.
4. A metrology system for a thin film stack as claimed in claim 3 further comprising:
and the processing device is connected with the receiving device to acquire the second measurement signal, performs spectrum fitting on the second measurement signal, and calculates to obtain a global optimal solution as the measurement thickness of the thin film layer to be measured.
5. A metrology system for thin film stacks as claimed in claim 1 wherein said transmitting means comprises:
and the emitter is used for emitting a detection signal to the thin film lamination, and the detection signal is reflected on the thin film lamination to obtain the first measurement signal.
6. A metrology system for thin film stacks as claimed in claim 1 wherein said blocking means comprises:
and the first barrier plate is positioned on the transmission path of the one or more third measuring signals and used for reflecting and/or absorbing the third measuring signals.
7. A metrology system for thin film stacks as claimed in claim 1 wherein said blocking means comprises:
the second blocking plate is positioned on a transmission path of the first measuring signal and used for blocking at least one part of the first measuring signal; and
a moving arm connected with the second blocking plate for moving the second blocking plate,
when the second blocking plate is located at different positions, different parts of the first measuring signals are blocked.
8. A measurement system for a thin film stack according to claim 1, wherein said transmitting means is adapted to transmit a detection signal towards a detection location of said thin film stack, said detection signal being reflected at said detection location to obtain said first measurement signal;
the metrology system further comprises:
the adjusting device is connected with the transmitting device and used for adjusting the posture of the transmitting device; the adjusting device adjusts the position of the detection position by adjusting the posture of the transmitting device.
9. A metrology method for a thin film stack, comprising:
transmitting a detection signal to the film lamination to obtain a second measurement signal reflected by the film layer to be measured and a third measurement signal reflected by the film layer not to be measured;
blocking transmission of the third measurement signal; and
and acquiring the second measurement signal, and acquiring the measurement thickness of the thin film layer to be measured according to the second measurement signal.
10. A measurement method for a thin film stack as claimed in claim 9, wherein the detection signal is linearly polarized light and the second measurement signal is elliptically polarized light;
the obtaining of the measured thickness of the thin film layer to be measured according to the second measurement signal includes:
and performing spectrum fitting on the second measurement signal, and calculating to obtain a global optimal solution as the measurement thickness of the thin film layer to be measured.
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| CN106198568A (en) * | 2015-05-24 | 2016-12-07 | 上海微电子装备有限公司 | The measurement apparatus of a kind of thin film with transparent substrates and measuring method |
| CN107561007A (en) * | 2016-06-30 | 2018-01-09 | 上海微电子装备（集团）股份有限公司 | A kind of measured thin film apparatus and method |
| US20200182606A1 (en) * | 2018-12-07 | 2020-06-11 | Onto Innovation Inc. | Optical metrology device for measuring samples having thin or thick films |
| CN111426275A (en) * | 2020-04-09 | 2020-07-17 | 武汉颐光科技有限公司 | Thin film measuring method |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106198568A (en) * | 2015-05-24 | 2016-12-07 | 上海微电子装备有限公司 | The measurement apparatus of a kind of thin film with transparent substrates and measuring method |
| CN107561007A (en) * | 2016-06-30 | 2018-01-09 | 上海微电子装备（集团）股份有限公司 | A kind of measured thin film apparatus and method |
| US20200182606A1 (en) * | 2018-12-07 | 2020-06-11 | Onto Innovation Inc. | Optical metrology device for measuring samples having thin or thick films |
| CN111426275A (en) * | 2020-04-09 | 2020-07-17 | 武汉颐光科技有限公司 | Thin film measuring method |
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