CN107560557A - A kind of method and device for measuring deep hole wall films thickness - Google Patents
A kind of method and device for measuring deep hole wall films thickness Download PDFInfo
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- CN107560557A CN107560557A CN201710775180.4A CN201710775180A CN107560557A CN 107560557 A CN107560557 A CN 107560557A CN 201710775180 A CN201710775180 A CN 201710775180A CN 107560557 A CN107560557 A CN 107560557A
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Abstract
The embodiment of the present application discloses a kind of method for measuring deep hole wall films thickness, this method calculates the thickness of every layer film to plural layers in deep hole side wall by the way of layer by layer deposition calculating, i.e., thin film is often deposited in deep hole side wall and just obtains an actual spectrum using Ellipsometric Spectrum Method measurement.For any thin film in deep hole side wall, after actual spectrum is obtained, deposit according to the actual spectrum and before every before the thickness of thin film and the geometrical structure parameter of deep hole measured during per thin film, the thickness of the layer film can be calculated, so as to realize the thickness in measurement deep hole side wall in plural layers per layer film, to ensure the accuracy purpose per layer film thickness in film deposition process.
Description
Technical field
The application is related to field of optical measurements, more particularly to a kind of method and device for measuring deep hole wall films thickness.
Background technology
With the development of thin film technique, film can apply to integrated circuit, miniature thin-film capacitor, three-dimensional storage
Deng.In the technique of film is prepared, film thickness is a very important parameter, is directly connected to the element using the film
Can normal work, therefore, film thickness is accurately measured in the technique for prepare film, to ensure the accuracy of film thickness
It is very necessary.For example, in some have the equipment of deep hole, need to deposit plural layers in the side wall of deep hole.For
These have for the equipment of deep hole, and the thickness of the plural layers of the deposited on sidewalls of its deep hole can be based on oval polarization spectrum
Method measures.But the thickness of each layer film in the plural layers is but difficult to be measured, especially, in film
Thickness it is minimum and/or in the case that the material character of each layer film is similar, the thickness in plural layers per thin film is just more
It is difficult to be measured.
The content of the invention
The application provides a kind of method and device for measuring deep hole wall films thickness, is deposited on distinguishing in deep hole side wall
Thickness is minimum and/or plural layers that thin-film material property is similar, realize the thickness measured in the plural layers per layer film,
To ensure the purpose of the accuracy per layer film thickness in film deposition process.
In a first aspect, in order to solve the above technical problems, the embodiment of the present application provides a kind of measurement deep hole wall films thickness
The method of degree, methods described include：
Without before depositing any film in deep hole, the deep hole is measured using Ellipsometric Spectrum Method, with
The first actual spectrum is obtained, and the geometrical structure parameter of the deep hole is measured according to first actual spectrum, wherein, according to institute
Stating the first theoretical spectral that geometrical structure parameter is determined can be fitted with first actual spectrum；
After depositing the first layer film on the surface of the deep hole side wall, the deep hole is entered using Ellipsometric Spectrum Method
Row measurement, to obtain the second actual spectrum, and the thickness of first layer film is measured according to second actual spectrum, its
In, it is real with described second according to the second theoretical spectral that the thickness of the geometrical structure parameter and first layer film is determined
Border spectrum can be fitted；
After depositing the second layer film on the surface of first layer film, using Ellipsometric Spectrum Method to the deep hole
Measure, to obtain the 3rd actual spectrum, and measure according to the 3rd actual spectrum thickness of second layer film, its
In, determined according to the thickness of the geometrical structure parameter, the thickness of first layer film and second layer film
Three theoretical spectrals can be fitted with the 3rd actual spectrum.
Optionally, the geometrical structure parameter that the deep hole is measured according to first actual spectrum includes：
The initial value of the geometrical structure parameter is set, first according to the calculation of initial value of the geometrical structure parameter
Initial theory spectrum；
The first initial theory spectrum and first actual spectrum are fitted, judge first initial theory
Whether spectrum and the degree of fitting of first actual spectrum exceed first threshold；
If the first initial theory spectrum and the degree of fitting of first actual spectrum exceed the first threshold, really
The initial value of the fixed geometrical structure parameter is the geometrical structure parameter, and the first initial theory spectrum is the described first reason
By spectrum；
If the degree of fitting of the first initial theory spectrum and first actual spectrum without departing from the first threshold,
The initial value for performing and the geometrical structure parameter being set then is returned to, the according to the calculation of initial value of the geometrical structure parameter
One initial theory spectrum.
Optionally, the thickness that first layer film is measured according to second actual spectrum includes：
The initial value of the thickness of first layer film is set, according to the calculation of initial value of the thickness of first layer film
The second initial theory spectrum；
The second initial theory spectrum and second actual spectrum are fitted, judge second initial theory
Whether spectrum and the degree of fitting of second actual spectrum exceed Second Threshold；
If the second initial theory spectrum and the degree of fitting of second actual spectrum exceed the Second Threshold, really
The initial value of the thickness of fixed first layer film is the thickness of first layer film, and the second initial theory spectrum is institute
State the second theoretical spectral；
If the degree of fitting of the second initial theory spectrum and second actual spectrum without departing from the Second Threshold,
The initial value for performing the thickness that first layer film is set then is returned to, according to the initial value meter of the thickness of first layer film
Calculate the second initial theory spectrum.
Optionally, the thickness that second layer film is measured according to second actual spectrum includes：
The initial value of the thickness of second layer film is set, according to the calculation of initial value of the thickness of second layer film
The 3rd initial theory spectrum；
The 3rd initial theory spectrum is fitted with the 3rd actual spectrum, judges the 3rd initial theory
Whether spectrum and the degree of fitting of the 3rd actual spectrum exceed the 3rd threshold value；
If the 3rd initial theory spectrum and the degree of fitting of the 3rd actual spectrum exceed the 3rd threshold value, it is determined that institute
The initial value for stating the thickness of the second layer film is the thickness of second layer film, and the 3rd initial theory spectrum is described the
Three theoretical spectrals；
If the degree of fitting of the 3rd initial theory spectrum and the 3rd actual spectrum without departing from the 3rd preparatory condition,
The initial value for performing the thickness that second layer film is set then is returned to, according to the initial value meter of the thickness of second layer film
Calculate the 3rd initial theory spectrum.
Optionally, the thickness of the thickness of first layer film and second layer film be respectively less than/is equal to the 4th threshold value.
Optionally, the property of first layer film is similar with the property of second layer film.
Optionally, methods described also includes：
After the deposition third layer film of the surface of second layer film, using Ellipsometric Spectrum Method to the deep hole
Measure, to obtain the 4th actual spectrum, and measure according to the 4th actual spectrum thickness of the third layer film, its
In, according to the geometrical structure parameter, the thickness of first layer film, the thickness of second layer film and the third layer
The 4th theoretical spectral that the thickness of film is determined can be fitted with the 4th actual spectrum.
Optionally, the deep hole is the deep hole etched on three-dimensional storage.
Second aspect, in order to solve the above technical problems, the embodiment of the present application provides a kind of measurement deep hole wall films thickness
The device of degree, described device include：
First acquisition unit, before in deep hole without any film of deposition, using Ellipsometric Spectrum Method to institute
State deep hole to measure, to obtain the first actual spectrum；
First measuring unit, for measuring the geometrical structure parameter of the deep hole according to first actual spectrum, wherein,
The first theoretical spectral determined according to the geometrical structure parameter can be fitted with first actual spectrum；
Second acquisition unit, after depositing the first layer film on the surface of the deep hole side wall, using elliptical polarization
Spectroscopic methodology measures to the deep hole, to obtain the second actual spectrum；
Second measuring unit, for measuring the thickness of first layer film according to second actual spectrum, wherein, root
According to the second theoretical spectral that the thickness of the geometrical structure parameter and first layer film is determined and the described second actual light
Spectrum can be fitted；
3rd acquiring unit, after depositing the second layer film on the surface of first layer film, using oval inclined
Spectroscopy measures to the deep hole, to obtain the 3rd actual spectrum；
3rd measuring unit, for measuring the thickness of second layer film according to the 3rd actual spectrum, wherein, root
The 3rd determined according to the thickness of the geometrical structure parameter, the thickness of first layer film and second layer film is theoretical
Spectrum can be fitted with the 3rd actual spectrum.
Optionally, first measuring unit includes：
First setting unit, for setting the initial value of the geometrical structure parameter, according to the geometrical structure parameter
First initial theory spectrum described in calculation of initial value；
First judging unit, for the first initial theory spectrum and first actual spectrum to be fitted, sentence
Whether the disconnected first initial theory spectrum and the degree of fitting of first actual spectrum exceed first threshold；
First determining unit, if exceeding for the first initial theory spectrum and the degree of fitting of first actual spectrum
The first threshold, it is determined that the initial value of the geometrical structure parameter is the geometrical structure parameter, and described first initially manages
It is first theoretical spectral by spectrum；
First returning unit, if not having for the first initial theory spectrum and the degree of fitting of first actual spectrum
Beyond the first threshold, then the first setting unit is returned.
Optionally, second measuring unit includes：
Second setting unit, the initial value of the thickness for setting first layer film, according to first layer film
Thickness calculation of initial value described in the second initial theory spectrum；
Second judging unit, for the second initial theory spectrum and second actual spectrum to be fitted, sentence
Whether the disconnected second initial theory spectrum and the degree of fitting of second actual spectrum exceed Second Threshold；
Second determining unit, if exceeding for the second initial theory spectrum and the degree of fitting of second actual spectrum
The Second Threshold, it is determined that the initial value of the thickness of first layer film is the thickness of first layer film, described the
Two initial theory spectrum are second theoretical spectral；
Second returning unit, if the degree of fitting of the second initial theory spectrum and second actual spectrum without departing from
The Second Threshold, then return to the second setting unit.
Optionally, the 3rd measuring unit includes：
3rd setting unit, the initial value of the thickness for setting second layer film, according to second layer film
Thickness calculation of initial value described in the 3rd initial theory spectrum；
3rd judging unit, for the 3rd initial theory spectrum to be fitted with the 3rd actual spectrum, sentence
Whether the disconnected 3rd initial theory spectrum and the degree of fitting of the 3rd actual spectrum exceed the 3rd threshold value；
3rd determining unit, if exceeding for the 3rd initial theory spectrum and the degree of fitting of the 3rd actual spectrum
3rd threshold value, it is determined that the initial value of the thickness of second layer film is the thickness of second layer film, at the beginning of the described 3rd
Beginning theoretical spectral is the 3rd theoretical spectral；
3rd returning unit, if the degree of fitting of the 3rd initial theory spectrum and the 3rd actual spectrum without departing from
3rd preparatory condition, then return to the 3rd setting unit.
Optionally, the thickness of the thickness of first layer film and second layer film be respectively less than/is equal to the 4th threshold value.
Optionally, the property of first layer film is similar with the property of second layer film.
Optionally, described device also includes：
4th acquiring unit, after depositing third layer film on the surface of second layer film, using oval inclined
Spectroscopy measures to the deep hole, to obtain the 4th actual spectrum；
4th measuring unit, for measuring the thickness of the third layer film according to the 4th actual spectrum, wherein, root
According to the geometrical structure parameter, the thickness of first layer film, the thickness of second layer film and the third layer film
The 4th theoretical spectral determined of thickness can be fitted with the 4th actual spectrum.
Optionally, the deep hole is the deep hole etched on three-dimensional storage.
Compared with prior art, the embodiment of the present application has advantages below：
In the embodiment of the present application, every layer is calculated by the way of layer by layer deposition calculating to plural layers in deep hole side wall
The thickness of film, i.e., thin film is often deposited in deep hole side wall once actual light is just obtained using Ellipsometric Spectrum Method measurement
Spectrum.For any thin film in deep hole side wall, after actual spectrum is obtained, deposit according to the actual spectrum and before
Per the thickness of thin film and the geometrical structure parameter of deep hole before being measured during per thin film, this can be calculated
The thickness of layer film.The method of the embodiment of the present application, can be in film deposition process, and layer by layer deposition calculates, to measure every layer
The thickness of film, so as to realize the thickness in measurement deep hole side wall in plural layers per layer film, with film deposition process
Ensure the accuracy purpose per layer film thickness.
Brief description of the drawings
, below will be to embodiment or existing in order to illustrate more clearly of the embodiment of the present application or technical scheme of the prior art
There is the required accompanying drawing used in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
Some embodiments described in application, for those of ordinary skill in the art, on the premise of not paying creative work,
Other accompanying drawings can also be obtained according to these accompanying drawings.
Fig. 1 is a kind of schematic flow sheet of the method for measurement deep hole wall films thickness that the embodiment of the present application provides；
Fig. 2 is the structural representation for the three-dimensional storage that the embodiment of the present application provides；
Fig. 3 is a kind of exemplary plot for the actual spectrum of acquisition first that the embodiment of the present application provides；
Fig. 4 is the schematic flow sheet of the geometrical structure parameter for the measurement deep hole that the embodiment of the present application provides；
Fig. 5 is the fit procedure example of the first initial theory spectrum that the embodiment of the present application provides and the first actual spectrum
Figure；
Fig. 6 is the schematic flow sheet of the thickness for measurement first layer film that the embodiment of the present application provides；
Fig. 7 is the schematic flow sheet of the thickness for measurement second layer film that the embodiment of the present application provides；
Fig. 8 be the embodiment of the present application deep hole wall films thickness measurement result and transmission electron microscope it is direct
The comparative graph of measurement result；
Fig. 9 is a kind of structured flowchart of the device for measurement deep hole wall films thickness that the embodiment of the present application provides.
Embodiment
In order that those skilled in the art more fully understand the present invention program, below in conjunction with the embodiment of the present invention
Accompanying drawing, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is only this
Invention part of the embodiment, rather than whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art exist
The every other embodiment obtained under the premise of creative work is not made, belongs to the scope of protection of the invention.
Inventor it has been investigated that, prior art, before deep hole does not deposit any film, deep hole is once surveyed
Amount, to obtain an actual spectrum, the geometrical structure parameter of deep hole is obtained using the actual spectrum, and all layers are deposited in deep hole
Film and then to deep hole carry out one-shot measurement, obtain an actual spectrum, obtain the thickness of each layer film using the actual spectrum
Degree.
But on the one hand this method requires that theoretical spectral can respond to each assignment of every layer film thickness, i.e.,
When being per layer film thickness assignment difference every time, it is desirable to which theoretical spectral can change, and on the other hand requirement is thin for different layers
During film assignment, the change of theoretical spectral is different, so as to the different instructions plural layers changed according to theoretical spectral,
And then obtain thickness corresponding to per layer film.And for the plural layers in deep hole, when the thickness of film is minimum, each film
When thickness changes, its change value also can be minimum, and during so as to cause the thickness of film to change, theoretical spectral will not become
Change, and the thickness of the film can not be measured.It is every time change with 1 the percent of the thickness of film such as film thickness is 10nm
Measure for film thickness assignment when, i.e., the thickness of each film changes 0.1nm, and change value is minimum, and theoretical spectral will not be with thin
The change of film thickness and change, so as to which the thickness of the film can not be measured.When thin-film material property is similar, different layers are thin
When the thickness of film changes, the situation of change that theoretical spectral occurs is also similar, so as to cannot be distinguished by the change of the theoretical spectral
It is caused by the thickness change of any layer film, so as to which the thickness of every layer film can not be obtained.Such as thin-film material is respectively SiO2
And SiN, because SiO2 with SiN properties are similar, then when SiO2 films and SiN films change, the change of theoretical spectral generation
Situation is also similar, therefore, it is impossible to by theoretical spectral change distinguish the theoretical spectral change be SiO2 films change cause
, or caused by the change of SiN films, so as to which the thickness of SiO2 films and SiN films can not be obtained respectively.
In order to solve the above problems, the embodiment of the present application to plural layers in deep hole using layer by layer deposition calculating by the way of come
The thickness per layer film is calculated, i.e., thin film is often deposited in deep hole side wall and just obtains one using Ellipsometric Spectrum Method measurement
Secondary actual spectrum.For any thin film in deep hole side wall, after actual spectrum is obtained, according to the actual spectrum and
Deposit before measured during per thin film before per the thickness of thin film and the geometrical structure parameter of deep hole, can be with
Calculate the thickness of the layer film.
Below in conjunction with the accompanying drawings, the various non-limiting embodiments of the application are described in detail.
Referring to Fig. 1, a kind of schematic flow sheet for the method for measuring deep hole wall films thickness, methods described bag are shown
Include：
S101, before no any film of deposition, the deep hole is surveyed using Ellipsometric Spectrum Method in deep hole
Amount, to obtain the first actual spectrum, and according to the geometrical structure parameter of first actual spectrum measurement deep hole, wherein,
The first theoretical spectral determined according to the geometrical structure parameter can be fitted with first actual spectrum.
Wherein, the cross section of the deep hole can be different shapes, such as can be circular or oval
Deng.The shape of the cross section of deep hole is different, and the geometrical structure parameter is different.When being shaped as circle of cross section of deep hole,
The geometrical structure parameter can include height of circular diameter, deep hole etc.；When the cross section of deep hole is shaped as ellipse
When, the geometrical structure parameter can include height of oval major diameter, oval minor axis, deep hole etc..
The deep hole can be the deep hole etched on three-dimensional storage, and Fig. 2 shows the structural representation of three-dimensional storage
Scheme, a is the tomograph of three-dimensional storage in Fig. 2, and b is the top view of three-dimensional storage, and c is the section of three-dimensional storage
Figure.Wherein, the stepped construction 201 that three-dimensional storage can include tens layers or even the stacking of up to a hundred layers of dielectric film forms, three
Dimension memory needs to etch deep hole 202, the cross section of the deep hole 202 illustrated in the stepped construction in a manufacturing process
Be shaped as circle, and only have several nanometers of film in deep hole side wall deposition multi-layered thickness, with for storing electric charge.In Fig. 2 with
Exemplified by three-layer thin-film, it is included in the first layer film 203, the second layer deposited on the surface of the first layer film of surface of deep hole deposition
Film 204 and the third layer film 205 deposited on the surface of the second layer film.
First actual spectrum can be that the deep hole side wall that deep hole collects after actual light source is irradiated reflects
The spectrum of elliptically polarized light.Specifically, the deep hole is measured using Ellipsometric Spectrum Method, to obtain the first actual light
Composing to be：Using actual light source (such as white light) as incident light, and the ad-hoc location of deep hole side wall is got at an angle,
After the incident light is reflected by deep hole side wall, the polarization state of the incident light changes, and then, can be sent out according to the polarization state
The situation for changing produces the first actual spectrum.
, can be with without before depositing any film in the deep hole of three-dimensional storage for example, for three-dimensional storage
Setting light source is beam of white light, the ad-hoc location using incident angle as 65 degree of irradiation deep hole side walls, finally by spectra collection element
Collect first actual spectrum of the deep hole side wall after light source irradiation.
It should be noted that spectrum involved in the embodiment of the present application is the spectroscopic ellipsometry of two dimension, its horizontal seat
Optical wavelength is designated as, ordinate is spectral signal intensity, the specific example that the first actual spectrum is obtained using Ellipsometric Spectrum Method
Scheme shown in Figure 3.Wherein, 301 be Ellipsometric Spectrum Method schematic diagram, and 302 be the first actual spectrum figure obtained.
Referring to Fig. 4, the schematic flow sheet for the geometrical structure parameter for measuring the deep hole is shown.Obtain the first actual spectrum
Afterwards, can be specially according to the geometrical structure parameter of first actual spectrum measurement deep hole：
S401, the initial value that the geometrical structure parameter is set, according to the calculation of initial value of geometrical structure parameter institute
State the first initial theory spectrum.
Optical equations can be based in the present embodiment:St1 (λ)=R (CDi, HTj) determines the first theoretical spectral, wherein λ
For optical wavelength, CDi, HTj represent geometrical structure parameter, and i and j indicate multiple geometrical structure parameters.If the cross section of deep hole
Circle is shaped as, then CDi can represent the diameter of the cross section of deep hole, and HTj can represent the height of deep hole.The present embodiment can be with
For the geometrical structure parameter setting initial value in the Optical equations, first when computational geometry structural parameters are the initial value is initial
Theoretical spectral.
S402, the first initial theory spectrum and first actual spectrum is fitted, judged at the beginning of described first
Whether the degree of fitting of beginning theoretical spectral and first actual spectrum exceeds first threshold.
Wherein, the numerical value of the degree of fitting can be 0 to 1, wherein, the numerical value of the degree of fitting is bigger, represents this two light
Similarity degree between spectrum is higher, conversely, the numerical value of the degree of fitting is smaller, represents that the similarity degree between this two spectrum is got over
It is low.For example when the numerical value of the degree of fitting between two spectrum is 0, illustrate that this two spectrum similarity degrees are extremely low, i.e., this two
Spectrum is entirely different；When the numerical value of the degree of fitting between two spectrum is 1, illustrate that this two spectrum similarity degrees are high, i.e.,
This two spectrum are almost the same.The threshold value can rule of thumb be pre-set.
If S403, the first initial theory spectrum and the degree of fitting of first actual spectrum exceed first threshold
Value, it is determined that the initial value of the geometrical structure parameter is the geometrical structure parameter, and the first initial theory spectrum is institute
The first theoretical spectral is stated, if the degree of fitting of the first initial theory spectrum and first actual spectrum is without departing from described the
One threshold value, then return and perform S401.
, can when the degree of fitting of the first initial theory spectrum and first actual spectrum exceeds the first threshold
To think that the first initial theory spectrum and the first actual spectrum are very close, you can to think the geometrical structure parameter now set
Initial value be deep hole geometrical structure parameter.
When the first initial theory spectrum and the degree of fitting of first actual spectrum are without departing from the first threshold
When, it is believed that the initial value of the geometrical structure parameter now set is not the geometrical structure parameter of deep hole, it is necessary to reset
The initial value of geometrical structure parameter, recalculate the first initial theory spectrum, until the first initial theory spectrum with it is described
The degree of fitting of first actual spectrum exceeds the first threshold.
By taking the first actual spectrum obtained in above-mentioned Fig. 3 as an example, the exemplary plot of the fit procedure can with as shown in figure 5,
501 can represent to set the initial value of the geometrical structure parameter for the first time in Fig. 5, the first obtained initial theory spectrum and the
The fitted figure of one actual spectrum, the of the calculation of initial value of the geometrical structure parameter as can be seen from the figure set according to first time
One initial theory spectrum and the similarity of the first actual spectrum be not high；On the basis of 501,502 can represent second of setting
The initial value of the geometrical structure parameter, it is initial to obtain corresponding with the initial value for the geometrical structure parameter that second is set first
The fitted figure of theoretical spectral and the first actual spectrum, the similarity of the two be not also high；On the basis of 502,503 can represent
The initial value of the geometrical structure parameter is set three times, obtained corresponding with the initial value for the geometrical structure parameter that third time is set
The fitted figure of first theoretical spectral and the first actual spectrum, the curve 1. marked represent the first initial theory spectrum, 2. marked
Curve represents the first actual collection spectrum.501 to 503 as can be seen that with being constantly the geometrical structure parameter from figure
Initial value is set, corresponding first initial theory spectrum moves closer to the first actual spectrum, in 503 first initial theory spectrum with
First actual spectrum is almost consistent, and the first initial theory spectrum now can be defined as to the first theoretical spectral, and described first
The initial value of the geometrical structure parameter corresponding to theoretical spectral is the geometrical structure parameter to be measured.
S102, the deep hole surface deposit the first layer film after, using Ellipsometric Spectrum Method to the deep hole
Measure, to obtain the second actual spectrum, and measure according to second actual spectrum thickness of first layer film, its
In, it is real with described second according to the second theoretical spectral that the thickness of the geometrical structure parameter and first layer film is determined
Border spectrum can be fitted.
After depositing the first layer film on the surface of the deep hole side wall, deep hole side wall is measured using Ellipsometric Spectrum Method
Identical position in upper and S101, collect the second actual spectrum.
Referring to Fig. 6, the schematic flow sheet for the thickness for measuring first layer film is shown.Obtain the second actual spectrum
Afterwards, can be specially according to the thickness of second actual spectrum measurement, first layer film：
S601, set first layer film thickness initial value, according to the initial of the thickness of first layer film
Value calculates the second initial theory spectrum.
After depositing the first layer film on the surface of the deep hole side wall, except the geometrical structure parameter, also wrap
The thickness of the first layer film is included, therefore, the second reason can be determined according to the thickness of the geometrical structure parameter and the first layer film
By spectrum, such as Optical equations can be based on:St2 (λ)=R (CDi, HTj, D1) determines the second theoretical spectral, compared to S401
In Optical equations, the thickness D1 of the first layer film is added in this step as the parameter for determining the second theoretical spectral.Due to
The deposition of film does not have an impact to the geometrical structure parameter of deep hole, then, can when the same location of deep hole side wall measures
Geometrical structure parameter that will measure to obtain in S401 need to only be set as the known parameters in St2 (λ)=R (CDi, HTj, D1)
The thickness D1 of the first layer film initial value is put, to calculate the second initial theory spectrum, until the second initial theory spectrum
Untill exceeding Second Threshold with the degree of fitting of the second actual spectrum.
S602, the second initial theory spectrum and second actual spectrum is fitted, judged at the beginning of described second
Whether the degree of fitting of beginning theoretical spectral and second actual spectrum exceeds Second Threshold.
If S603, the second initial theory spectrum and the degree of fitting of second actual spectrum exceed second threshold
Value, it is determined that the initial value of the thickness of first layer film be first layer film thickness, second initial theory
Spectrum is second theoretical spectral, if the second initial theory spectrum and the degree of fitting of second actual spectrum be not super
Go out the Second Threshold, then return and perform S601.
, can when the degree of fitting of the second initial theory spectrum and second actual spectrum exceeds the Second Threshold
To think that the second initial theory spectrum and the second actual spectrum are very close, you can with the first layer film for thinking now to set
The initial value of thickness is the thickness of the first layer film.
When the second initial theory spectrum and the degree of fitting of second actual spectrum are without departing from the Second Threshold
When, it is believed that the initial value of the thickness of the first layer film now set is not the thickness of first layer film, it is necessary to again
The initial value of the thickness of first layer film is set, recalculates the second initial theory spectrum, until the second initial theory light
The degree of fitting of spectrum and second actual spectrum exceeds the Second Threshold.
S103, first layer film surface deposit the second layer film after, using Ellipsometric Spectrum Method to institute
State deep hole to measure, to obtain the 3rd actual spectrum, and second layer film is measured according to the 3rd actual spectrum
Thickness, wherein, determined according to the thickness of the geometrical structure parameter, the thickness of first layer film and second layer film
The 3rd theoretical spectral gone out can be fitted with the 3rd actual spectrum.
After depositing the second layer film on the surface of first layer film, deep hole side is measured using Ellipsometric Spectrum Method
With identical position in S101 and S102 on wall, the 3rd actual spectrum is collected.
Referring to Fig. 7, the schematic flow sheet for the thickness for measuring second layer film is shown.Obtain the 3rd actual spectrum
Afterwards, can be specially according to the thickness of the 3rd actual spectrum measurement second layer film：
S701, set second layer film thickness initial value, according to the initial of the thickness of second layer film
Value calculates the 3rd initial theory spectrum.
After depositing the second layer film on the surface of the deep hole side wall, except the geometrical structure parameter and first
The thickness of layer film, include the thickness of the second layer film, therefore, can be according to the geometrical structure parameter, the first layer film
Thickness and the thickness of the second layer film determine the 3rd theoretical spectral, such as Optical equations can be based on:St2 (λ)=R (CDi,
HTj, D1, D2) the 3rd theoretical spectral is determined, compared to the Optical equations in S601, the second layer film is added in this step
Thickness D2 is as the parameter for determining the 3rd theoretical spectral.Because the deposition of film does not produce shadow to the geometrical structure parameter of deep hole
Ring, then when the same location of deep hole side wall measures, obtained geometrical structure parameter and first can will be measured in S601
The thickness of layer film need to only set the thickness of the second layer film as the known parameters in St2 (λ)=R (CDi, HTj, D1, D2)
D2 initial value, to calculate the 3rd initial theory spectrum, until the 3rd initial theory spectrum and the plan of the 3rd actual spectrum
It is right more than the 3rd threshold value untill.
S702, the 3rd initial theory spectrum is fitted with the 3rd actual spectrum, judged at the beginning of the described 3rd
Whether the degree of fitting of beginning theoretical spectral and the 3rd actual spectrum exceeds the 3rd threshold value.
If S703, the 3rd initial theory spectrum and the degree of fitting of the 3rd actual spectrum exceed the 3rd threshold value,
The initial value for determining the thickness of second layer film is the thickness of second layer film, and the 3rd initial theory spectrum is
3rd theoretical spectral, if the 3rd initial theory spectrum and the degree of fitting of the 3rd actual spectrum are without departing from the 3rd
Preparatory condition, then return and perform S701.
, can when the degree of fitting of the 3rd initial theory spectrum and the 3rd actual spectrum exceeds three threshold value
To think that the 3rd initial theory spectrum and the 3rd actual spectrum are very close, you can with the second layer film for thinking now to set
The initial value of thickness is the thickness of the second layer film.
When the 3rd initial theory spectrum and the degree of fitting of the 3rd actual spectrum are without departing from the 3rd threshold value
When, it is believed that the initial value of the thickness of the second layer film now set is not the thickness of second layer film, it is necessary to again
The initial value of the thickness of second layer film is set, recalculates the 3rd initial theory spectrum, until the 3rd initial theory light
The degree of fitting of spectrum and the 3rd actual spectrum exceeds the 3rd threshold value.
In the embodiment of the present application, every layer is calculated by the way of layer by layer deposition calculating to plural layers in deep hole side wall
The thickness of film, i.e., thin film is often deposited in deep hole side wall once actual light is just obtained using Ellipsometric Spectrum Method measurement
Spectrum.For any thin film in deep hole side wall, after actual spectrum is obtained, deposit according to the actual spectrum and before
Per the thickness of thin film and the geometrical structure parameter of deep hole before being measured during per thin film, this can be calculated
The thickness of layer film.The method of the embodiment of the present invention, can be in film deposition process, and layer by layer deposition calculates, to measure every layer
The thickness of film, so as to realize the thickness in measurement deep hole side wall in plural layers per layer film, with film deposition process
Ensure the accuracy purpose per layer film thickness.
In the present embodiment, can also be according to except depositing first layer film and the second layer film in deep hole side wall
The secondary other layer films of deposition, such as deposit third layer film on the surface of second layer film, then methods described can also wrap
Include：After the deposition third layer film of the surface of second layer film, the deep hole is carried out using Ellipsometric Spectrum Method
Measurement, to obtain the 4th actual spectrum, and according to the thickness of the 4th actual spectrum measurement third layer film, wherein,
It is thin according to the geometrical structure parameter, the thickness of first layer film, the thickness of second layer film and the third layer
The 4th theoretical spectral that the thickness of film is determined can be fitted with the 4th actual spectrum.
Method in the present embodiment can be measured in deep hole side wall in plural layers in the case where the thickness of film is minimum
Per thin film thickness, i.e., deep hole sidewall surfaces deposition the first layer film thickness, the first layer film surface deposit
The second layer film thickness and the second layer film surface deposit third layer film thickness be smaller than/be equal to the 4th
Threshold value, the 4th threshold value for example can be 100nm.
Method in the present embodiment can measure more in deep hole side wall in the case where the material character of each layer film is similar
Thickness in layer film per thin film, such as the refractive index of the first layer film and the second layer film is very close, can be the
The absolute value of the specific refractivity of thin film and the second layer film be less than/is equal to the 5th threshold value, and the 5th threshold value can be
It is rule of thumb set in advance.
Thickness in plural layers per thin film and use in the deep hole side wall measured using the method in the present embodiment
The direct measurement result of transmission electron microscope can reach the high goodness of fit, referring to Fig. 8, show each layer of the present embodiment
The comparative graph of the measurement result of the thickness of film and the direct measurement result using transmission electron microscope.In fig. 8,
(a) thickness measurement of first layer film of the present embodiment and the direct measurement result using transmission electron microscope are represented
Comparison curves, wherein, abscissa represents the thickness measurement of first layer film of the present embodiment, and ordinate is represented using transmission
The direct measurement result of electron microscope；(b) represent that the thickness measurement of second layer film of the present embodiment transmits with using
The comparison curves of the direct measurement result of electron microscope, wherein, abscissa represents the thickness of second layer film of the present embodiment
Measurement result, ordinate represent the direct measurement result using transmission electron microscope；(c) represent that the third layer of the present embodiment is thin
The thickness measurement of film and the comparison curves of the direct measurement result using transmission electron microscope, wherein, abscissa represents
The thickness measurement of the third layer film of the present embodiment, ordinate represent the direct measurement knot using transmission electron microscope
Fruit.
The measurement result of the thickness of each layer film of the present embodiment and the direct measurement result using transmission electron microscope
When being compared, it can judge to utilize in the deep hole side wall of the method measurement in the present embodiment by comparing the goodness of fit of the two
The accuracy of thickness in plural layers per thin film.For example, can with the degree of correlation R2 between two groups of measurement results come
Represent the goodness of fit of the two, wherein, R2=1 represent it is perfectly correlated, R2=0 represent completely it is uncorrelated；This implementation can also be utilized
The measurement result of the thickness of each layer film of example and the curve equation Y being fitted using the direct measurement result of transmission electron microscope
Coefficient a in=aX+b represents the goodness of fit of the two, and a represents that the scope of two groups of measurement results is closer, and a is got over closer to 1
Away from 1, the scope difference for representing two groups of measurement results is more remote.B represents the difference between two groups of measurement results, if a=1, b=
0, then illustrate that two groups of measurement results are identical, now R2 is also equal to 1.According to the thickness of each layer film of above-mentioned the present embodiment
The decision method of measurement result and the direct measurement result goodness of fit using transmission electron microscope, as can be seen from Figure 8,
(a) Y=1.0086X+2.3681 in, coefficient 1.0086 are in close proximity to 1, R2=0.9373, are also very close in 1, it is seen that this
The thickness measurement of first layer film of embodiment using the direct measurement result of transmission electron microscope with that can reach pole
The high goodness of fit, by that analogy, the thickness measurement of second layer film of the present embodiment is with using transmission electron microscope
Direct measurement result can reach the high goodness of fit, and the thickness measurement of the third layer film of the present embodiment is with using transmission
The direct measurement result of electron microscope can reach the high goodness of fit.As can be seen here, surveyed using the method in the present embodiment
Thickness in the deep hole side wall of amount in plural layers per thin film using the direct measurement result of transmission electron microscope with being reached
The method tool of thickness in the measurement deep hole side wall provided to the high goodness of fit, the present embodiment in plural layers per thin film
There are high accuracy and feasibility.
A kind of method of the measurement deep hole wall films thickness provided based on above example, the embodiment of the present application are also provided
A kind of device for measuring deep hole wall films thickness, describe its operation principle in detail below in conjunction with the accompanying drawings.
Referring to Fig. 9, the figure is a kind of structure of the device for measurement deep hole wall films thickness that the embodiment of the present application provides
Block diagram.
A kind of device for measurement deep hole wall films thickness that the present embodiment provides includes：
First acquisition unit 901, before in deep hole without any film of deposition, using Ellipsometric Spectrum Method pair
The deep hole measures, to obtain the first actual spectrum；
First measuring unit 902, for measuring the geometrical structure parameter of the deep hole according to first actual spectrum, its
In, the first theoretical spectral and first actual spectrum determined according to the geometrical structure parameter can be fitted；
Second acquisition unit 903, after depositing the first layer film on the surface of the deep hole side wall, using oval inclined
Spectroscopy measures to the deep hole, to obtain the second actual spectrum；
Second measuring unit 904, for measuring the thickness of first layer film according to second actual spectrum, its
In, it is real with described second according to the second theoretical spectral that the thickness of the geometrical structure parameter and first layer film is determined
Border spectrum can be fitted；
3rd acquiring unit 905, after depositing the second layer film on the surface of first layer film, using ellipse
Polarisation spectrometry measures to the deep hole, to obtain the 3rd actual spectrum；
3rd measuring unit 906, for measuring the thickness of second layer film according to the 3rd actual spectrum, its
In, determined according to the thickness of the geometrical structure parameter, the thickness of first layer film and second layer film
Three theoretical spectrals can be fitted with the 3rd actual spectrum.
Optionally, first measuring unit 902 includes：
First setting unit, for setting the initial value of the geometrical structure parameter, according to the geometrical structure parameter
First initial theory spectrum described in calculation of initial value；
First judging unit, for the first initial theory spectrum and first actual spectrum to be fitted, sentence
Whether the disconnected first initial theory spectrum and the degree of fitting of first actual spectrum exceed first threshold；
First determining unit, if exceeding for the first initial theory spectrum and the degree of fitting of first actual spectrum
The first threshold, it is determined that the initial value of the geometrical structure parameter is the geometrical structure parameter, and described first initially manages
It is first theoretical spectral by spectrum；
First returning unit, if not having for the first initial theory spectrum and the degree of fitting of first actual spectrum
Beyond the first threshold, then the first setting unit is returned.
Optionally, second measuring unit 904 includes：
Second setting unit, the initial value of the thickness for setting first layer film, according to first layer film
Thickness calculation of initial value described in the second initial theory spectrum；
Second judging unit, for the second initial theory spectrum and second actual spectrum to be fitted, sentence
Whether the disconnected second initial theory spectrum and the degree of fitting of second actual spectrum exceed Second Threshold；
Second determining unit, if exceeding for the second initial theory spectrum and the degree of fitting of second actual spectrum
The Second Threshold, it is determined that the initial value of the thickness of first layer film is the thickness of first layer film, described the
Two initial theory spectrum are second theoretical spectral；
Second returning unit, if the degree of fitting of the second initial theory spectrum and second actual spectrum without departing from
The Second Threshold, then return to the second setting unit.
Optionally, the 3rd measuring unit 906 includes：
3rd setting unit, the initial value of the thickness for setting second layer film, according to second layer film
Thickness calculation of initial value described in the 3rd initial theory spectrum；
3rd judging unit, for the 3rd initial theory spectrum to be fitted with the 3rd actual spectrum, sentence
Whether the disconnected 3rd initial theory spectrum and the degree of fitting of the 3rd actual spectrum exceed the 3rd threshold value；
3rd determining unit, if exceeding for the 3rd initial theory spectrum and the degree of fitting of the 3rd actual spectrum
3rd threshold value, it is determined that the initial value of the thickness of second layer film is the thickness of second layer film, at the beginning of the described 3rd
Beginning theoretical spectral is the 3rd theoretical spectral；
3rd returning unit, if the degree of fitting of the 3rd initial theory spectrum and the 3rd actual spectrum without departing from
3rd preparatory condition, then return to the 3rd setting unit.
Optionally, the thickness of the thickness of first layer film and second layer film be respectively less than/is equal to the 4th threshold value.
Optionally, the property of first layer film is similar with the property of second layer film.
Optionally, described device also includes：
4th acquiring unit, after depositing third layer film on the surface of second layer film, using oval inclined
Spectroscopy measures to the deep hole, to obtain the 4th actual spectrum；
4th measuring unit, for measuring the thickness of the third layer film according to the 4th actual spectrum, wherein, root
According to the geometrical structure parameter, the thickness of first layer film, the thickness of second layer film and the third layer film
The 4th theoretical spectral determined of thickness can be fitted with the 4th actual spectrum.
Optionally, the deep hole is the deep hole etched on three-dimensional storage.
In the embodiment of the present application, every layer is calculated by the way of layer by layer deposition calculating to plural layers in deep hole side wall
The thickness of film, i.e., thin film is often deposited in deep hole side wall once actual light is just obtained using Ellipsometric Spectrum Method measurement
Spectrum.For any thin film in deep hole side wall, after actual spectrum is obtained, deposit according to the actual spectrum and before
Per the thickness of thin film and the geometrical structure parameter of deep hole before being measured during per thin film, this can be calculated
The thickness of layer film.The method of the embodiment of the present application, can be in film deposition process, and layer by layer deposition calculates, to measure every layer
The thickness of film, so as to realize the thickness in measurement deep hole side wall in plural layers per layer film, with film deposition process
Ensure the accuracy purpose per layer film thickness.
When introducing the element of various embodiments of the application, article "a", "an", "this" and " described " are intended to
Indicate one or more elements.Word " comprising ", "comprising" and " having " are all inclusive and meaned except listing
Outside element, there can also be other elements.
It should be noted that one of ordinary skill in the art will appreciate that realize the whole in above method embodiment or portion
Split flow, it is that by computer program the hardware of correlation can be instructed to complete, described program can be stored in a computer
In read/write memory medium, the program is upon execution, it may include such as the flow of above-mentioned each method embodiment.Wherein, the storage
Medium can be magnetic disc, CD, read-only memory (Read-Only Memory, ROM) or random access memory (Random
Access Memory, RAM) etc..
Each embodiment in this specification is described by the way of progressive, identical similar portion between each embodiment
Divide mutually referring to what each embodiment stressed is the difference with other embodiment.It is real especially for device
For applying example, because it is substantially similar to embodiment of the method, so describing fairly simple, related part is referring to embodiment of the method
Part explanation.Device embodiment described above is only schematical, wherein described be used as separating component explanation
Unit and module can be or may not be physically separate.Furthermore it is also possible to it is selected according to the actual needs
In some or all of unit and module realize the purpose of this embodiment scheme.Those of ordinary skill in the art are not paying
In the case of creative work, you can to understand and implement.
Described above is only the embodiment of the application, it is noted that for the ordinary skill people of the art
For member, on the premise of the application principle is not departed from, some improvements and modifications can also be made, these improvements and modifications also should
It is considered as the protection domain of the application.
Claims (10)
- A kind of 1. method for measuring deep hole wall films thickness, it is characterised in that methods described includes：Without before depositing any film in deep hole, the deep hole is measured using Ellipsometric Spectrum Method, to obtain First actual spectrum, and according to the geometrical structure parameter of first actual spectrum measurement deep hole, wherein, according to described several The first theoretical spectral what structural parameters is determined can be fitted with first actual spectrum；After depositing the first layer film on the surface of the deep hole side wall, the deep hole is surveyed using Ellipsometric Spectrum Method Amount, to obtain the second actual spectrum, and according to the thickness of second actual spectrum measurement, first layer film, wherein, root According to the second theoretical spectral that the thickness of the geometrical structure parameter and first layer film is determined and the described second actual light Spectrum can be fitted；After depositing the second layer film on the surface of first layer film, the deep hole is carried out using Ellipsometric Spectrum Method Measurement, to obtain the 3rd actual spectrum, and according to the thickness of the 3rd actual spectrum measurement second layer film, wherein, The 3rd reason determined according to the thickness of the geometrical structure parameter, the thickness of first layer film and second layer film It can be fitted by spectrum and the 3rd actual spectrum.
- 2. according to the method for claim 1, it is characterised in that described that the deep hole is measured according to first actual spectrum Geometrical structure parameter include：The initial value of the geometrical structure parameter is set, and first is initial according to the calculation of initial value of the geometrical structure parameter Theoretical spectral；The first initial theory spectrum and first actual spectrum are fitted, judge the first initial theory spectrum Whether exceed first threshold with the degree of fitting of first actual spectrum；If the first initial theory spectrum and the degree of fitting of first actual spectrum exceed the first threshold, it is determined that institute The initial value for stating geometrical structure parameter is the geometrical structure parameter, and the first initial theory spectrum is first theoretical light Spectrum；If the first initial theory spectrum and the degree of fitting of first actual spectrum return without departing from the first threshold Receipt row sets the initial value of the geometrical structure parameter, at the beginning of first according to the calculation of initial value of the geometrical structure parameter Beginning theoretical spectral.
- 3. according to the method for claim 2, it is characterised in that described to measure described first according to second actual spectrum The thickness of layer film includes：The initial value of the thickness of first layer film is set, according to the calculation of initial value of the thickness of first layer film Second initial theory spectrum；The second initial theory spectrum and second actual spectrum are fitted, judge the second initial theory spectrum Whether exceed Second Threshold with the degree of fitting of second actual spectrum；If the second initial theory spectrum and the degree of fitting of second actual spectrum exceed the Second Threshold, it is determined that institute The initial value for stating the thickness of the first layer film is the thickness of first layer film, and the second initial theory spectrum is described the Two theoretical spectrals；If the second initial theory spectrum and the degree of fitting of second actual spectrum return without departing from the Second Threshold Receipt row sets the initial value of the thickness of first layer film, according to the calculation of initial value institute of the thickness of first layer film State the second initial theory spectrum.
- 4. according to the method for claim 3, it is characterised in that described to measure described second according to second actual spectrum The thickness of layer film includes：The initial value of the thickness of second layer film is set, according to the calculation of initial value of the thickness of second layer film 3rd initial theory spectrum；The 3rd initial theory spectrum is fitted with the 3rd actual spectrum, judges the 3rd initial theory spectrum Whether exceed the 3rd threshold value with the degree of fitting of the 3rd actual spectrum；If the degree of fitting of the 3rd initial theory spectrum and the 3rd actual spectrum exceeds the 3rd threshold value, it is determined that described the The initial value of the thickness of two-layer film is the thickness of second layer film, and the 3rd initial theory spectrum is the described 3rd reason By spectrum；If the 3rd initial theory spectrum and the degree of fitting of the 3rd actual spectrum return without departing from the 3rd preparatory condition Receipt row sets the initial value of the thickness of second layer film, according to the calculation of initial value institute of the thickness of second layer film State the 3rd initial theory spectrum.
- 5. according to the method for claim 1, it is characterised in that the thickness of first layer film and second layer film Thickness be respectively less than/be equal to the 4th threshold value.
- 6. according to the method for claim 1, it is characterised in that the property of first layer film and second layer film Property it is similar.
- 7. according to the method for claim 1, it is characterised in that methods described also includes：After the deposition third layer film of the surface of second layer film, the deep hole is carried out using Ellipsometric Spectrum Method Measurement, to obtain the 4th actual spectrum, and according to the thickness of the 4th actual spectrum measurement third layer film, wherein, It is thin according to the geometrical structure parameter, the thickness of first layer film, the thickness of second layer film and the third layer The 4th theoretical spectral that the thickness of film is determined can be fitted with the 4th actual spectrum.
- 8. according to the method described in claim 1 to 7 any one, it is characterised in that the deep hole is to be carved on three-dimensional storage Lose the deep hole.
- 9. a kind of device for measuring deep hole wall films thickness, it is characterised in that described device includes：First acquisition unit, before in deep hole without any film of deposition, using Ellipsometric Spectrum Method to the depth Hole measures, to obtain the first actual spectrum；First measuring unit, for measuring the geometrical structure parameter of the deep hole according to first actual spectrum, wherein, according to The first theoretical spectral that the geometrical structure parameter is determined can be fitted with first actual spectrum；Second acquisition unit, after depositing the first layer film on the surface of the deep hole side wall, using spectroscopic ellipsometry Method measures to the deep hole, to obtain the second actual spectrum；Second measuring unit, for measuring the thickness of first layer film according to second actual spectrum, wherein, according to institute State the second theoretical spectral that the thickness of geometrical structure parameter and first layer film is determined is with second actual spectrum It can be fitted；3rd acquiring unit, after depositing the second layer film on the surface of first layer film, using elliptically polarized light Spectrometry measures to the deep hole, to obtain the 3rd actual spectrum；3rd measuring unit, for measuring the thickness of second layer film according to the 3rd actual spectrum, wherein, according to institute State the 3rd theoretical spectral that the thickness of geometrical structure parameter, the thickness of first layer film and second layer film is determined It can be fitted with the 3rd actual spectrum.
- 10. device according to claim 9, it is characterised in that described device also includes：4th acquiring unit, after depositing third layer film on the surface of second layer film, using elliptically polarized light Spectrometry measures to the deep hole, to obtain the 4th actual spectrum；4th measuring unit, for measuring the thickness of the third layer film according to the 4th actual spectrum, wherein, according to institute State the thickness of geometrical structure parameter, the thickness of first layer film, the thickness of second layer film and the third layer film Spending the 4th theoretical spectral determined can be fitted with the 4th actual spectrum.
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