CN114964009A - Method for measuring thickness of silicon perforated lining layer - Google Patents
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- CN114964009A CN114964009A CN202210495702.6A CN202210495702A CN114964009A CN 114964009 A CN114964009 A CN 114964009A CN 202210495702 A CN202210495702 A CN 202210495702A CN 114964009 A CN114964009 A CN 114964009A
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 68
- 239000010703 silicon Substances 0.000 title claims abstract description 68
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 64
- 238000000034 method Methods 0.000 title claims abstract description 37
- 230000003287 optical effect Effects 0.000 claims abstract description 45
- 238000002310 reflectometry Methods 0.000 claims abstract description 26
- 239000000463 material Substances 0.000 claims abstract description 10
- 230000005540 biological transmission Effects 0.000 claims description 8
- 238000010521 absorption reaction Methods 0.000 claims description 4
- 239000006185 dispersion Substances 0.000 claims description 2
- 239000012780 transparent material Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 239000004020 conductor Substances 0.000 abstract description 4
- 239000012212 insulator Substances 0.000 abstract description 4
- 238000005259 measurement Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000000691 measurement method Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000013178 mathematical model Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000001066 destructive effect Effects 0.000 description 2
- 238000000572 ellipsometry Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000012014 optical coherence tomography Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
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- General Physics & Mathematics (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The disclosure provides a method for measuring thickness of a silicon perforated lining layer, which comprises the following steps: step 1, obliquely injecting a light wave to the side wall of a through silicon hole to be detected to obtain a returned light wave in the through silicon hole to be detected; step 2, establishing optical propagation models of the through silicon vias of the lining layers with different thicknesses according to the incident position and the incident angle of the light waves and the geometric structure parameters of the through silicon vias to be detected; step 3, obtaining the reflectivity of the regression light wave; and 4, obtaining the thickness of the silicon perforation lining layer according to the reflectivity of the regression light wave, the wavelength of the incident light wave and the optical propagation model of the silicon perforation. The silicon perforated lining layer can be flexibly measured by using the light beam to measure the silicon perforated lining layer, and meanwhile, the thickness of the lining layer is measured by measuring the reflectivity of the regression light wave, so that the method has high precision, and the method can be used for measuring the roughness of the inner wall of a micropore and a microgroove which are formed by materials such as conductors, semiconductors and insulators.
Description
Technical Field
The disclosure relates to the field of silicon semiconductors, in particular to a method for measuring thickness of a silicon through hole lining layer.
Background
Through Silicon Vias (TSV) interconnection technology utilizes vertical copper metal pillars to realize electrical interconnection of the upper side and the lower side of a wafer or a chip, greatly shortens interconnection length, has the characteristics of large bandwidth, low power consumption, high packaging density and the like, is suitable for heterogeneous integration of chips with different functions and different specifications, and is an important means for continuing moore's law.
The TSV liner layer (liner layer) is a key process layer for electrical isolation in TSV interconnection, is located between a metal copper column and a silicon substrate, and has a thickness value which is one of important parameters needing to be controlled in an IC process, and a high-precision nondestructive measurement method is urgently needed to support manufacturing process parameter optimization and cost control, ensure electrical performance, improve TSV manufacturing yield and optimize advanced 3D packaging cost of an integrated circuit.
However, the resolution of lossless optical coherence tomography is usually in the micrometer range, while technologies such as white light interference, spectral reflection, spectral ellipsometry And the like are used to measure structural parameters such as diameter And depth of TSV, And currently, the nano precision lossless measurement of TSV liner layer is still blank internationally (2021Metrology, International Roadmap For Devices And Systems, @ IEEE).
The applicant has therefore found that the existing non-destructive techniques have the following technical drawbacks: firstly, the resolution of an optical coherence tomography method is usually in a micron order, and the nanometer precision measurement of the thickness of the TSV lining layer cannot be realized; in addition, the measurement methods such as white light interference, spectral reflection, spectral ellipsometry and the like can only measure partial geometric structure parameters of the TSV and cannot measure the thickness information of the internal film layer.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, the present disclosure provides a method for measuring the thickness of a silicon perforated liner layer, which can flexibly measure the silicon perforations of all geometric structures by measuring the silicon perforated liner layer with a light beam, and can measure the thickness of the liner layer with high accuracy by measuring the reflectance of a regression light wave, so that the present disclosure can be applied to the roughness of the inner walls of micro-holes and micro-grooves formed by a conductor, a semiconductor, an insulator, etc.
The disclosure provides a method for measuring thickness of a silicon perforated lining layer, which comprises the following steps: s1, obliquely injecting a light wave to the side wall of the through silicon hole to be detected to obtain a returned regression light wave in the through silicon hole to be detected; s2, calculating the reflectivity based on the light intensity of the regression light wave; and S3, obtaining the thickness of the silicon through hole lining layer according to the reflectivity of the regression light wave, the wavelength of the incident light wave and the optical propagation model of the silicon through hole.
Optionally, S1 is preceded by: and S0, establishing optical propagation models of the silicon through hole lining layers with different thicknesses.
Optionally, the optical propagation model is constructed according to the incident position and the incident angle of the light wave and the geometric structure parameter of the through-silicon via to be measured.
Optionally, S3 includes: s31, obtaining the reflectance of the regression light wave corresponding to the incident light wave with different wavelengths, and constructing a curve graph of the wavelength of the incident light wave and the reflectance of the regression light wave; and S32, inquiring the optical propagation model matched with the graph according to the graph, and reading the thickness of the lining layer in the matched optical propagation model to obtain the thickness of the silicon perforated lining layer.
Alternatively, the reflectance in S3 is calculated by the intensity of the regression light wave and the intensity of the incident light wave, where R is λ ＝I λo /I λi ，I λo Indicating the intensity of the returning light wave, I λi Representing the intensity of the incident light wave.
Optionally, S2 further includes: and detecting the light transmission coefficient of the light intensity measuring device, and correcting the reflectivity through the light transmission coefficient of the light intensity measuring device.
Optionally, the incident light waves are condensed into a light beam; the cross-sectional outline of the light beam is the same as the cross-sectional outline of the through-silicon via.
Optionally, comprising: when the material of the inner liner layer is a transparent material, the optical propagation model in S2 adopts an optical Cauchy dispersion model and a Sellmeier model; when the material used for the lining layer is a partially transparent or opaque material, the optical propagation model in S2 uses a partial absorption or complete absorption corresponding optical resonator model and equation.
Optionally, the method further comprises: and S33, when the optical propagation model matched with the curve graph is not inquired, detecting and adjusting the incident position or the incident angle of the incident light wave until the curve graph of the output regression light wave has the matched optical propagation model.
Optionally, the wavelength of the incident light wave is in the range of 400nm-700 nm.
The method for measuring the thickness of the silicon perforated lining layer disclosed in the disclosure can flexibly measure the silicon perforations of all geometric structures by measuring the silicon perforated lining layer by using light beams, and simultaneously has high precision by measuring the thickness of the lining layer by measuring the reflectivity of a regression light wave, so that the method can be used for measuring the roughness of the inner walls of micropores and microgrooves formed by materials such as conductors, semiconductors and insulators.
Drawings
FIG. 1 schematically illustrates a flow chart of a method of measuring a thickness of a through-silicon-via liner according to an embodiment of the present disclosure;
FIG. 2 is a transmission diagram schematically illustrating refraction and reflection of a light wave in a through-silicon-via liner layer to be tested according to an embodiment of the present disclosure;
fig. 3 schematically illustrates a schematic diagram of incident light waves propagating geometrically inside a TSV according to an embodiment of the present disclosure;
fig. 4 schematically illustrates a graphical representation of the reflectance of a returned light wave and the wavelength of an incident light wave for liners of different thicknesses in accordance with an embodiment of the present disclosure.
Detailed Description
Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood that the description is illustrative only and is not intended to limit the scope of the present disclosure. In the following detailed description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the embodiments of the disclosure. It may be evident, however, that one or more embodiments may be practiced without these specific details. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present disclosure.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. The terms "comprises," "comprising," and the like, as used herein, specify the presence of stated features, steps, operations, and/or components, but do not preclude the presence or addition of one or more other features, steps, operations, or components.
The through silicon via liner (TSVliner) is a basic premise for guaranteeing the electrical performance of TSV (through silicon via) interconnection, but a high-precision optical measurement method for the thickness of the through silicon via liner is not reported yet.
Figure 1 schematically illustrates a flow chart of a method of measuring a thickness of a through silicon via liner layer according to an embodiment of the present disclosure.
The embodiment of the disclosure provides a method for measuring the thickness of a silicon through hole lining layer, which comprises three steps.
Step 1, obliquely injecting a light wave to the side wall of the through silicon hole to be detected, and obtaining a returned regression light wave in the through silicon hole to be detected.
And 2, calculating the reflectivity based on the light intensity of the regression light wave.
And 3, obtaining the thickness of the silicon perforated lining layer according to the reflectivity of the regression light wave, the wavelength of the incident light wave and the optical propagation model of the silicon perforated hole.
In general, a silicon via is a trench with a planar sidewall and is fabricated by a silicon etching process, and then a liner layer is formed on the silicon via and is exposed by a destructive method. The inner liner layer is prepared by a process including, but not limited to, thermal oxidation, chemical vapor deposition, and physical vapor deposition. Liner materials include, but are not limited to, silicon oxide, silicon nitride.
Through using the light beam to measure the silicon perforation inner liner, the silicon perforation of all geometric structures can be flexibly measured, and meanwhile, the thickness of the inner liner is measured by measuring the reflectivity of the regression light wave, so that the method has high precision, and the method can be used for measuring the roughness of the inner wall of micropores and microgrooves formed by materials such as conductors, semiconductors and insulators. The oblique light beam sequentially enters the hole wall and the hole bottom and is reflected by the hole wall again, so that the light beam carries information of the hole wall film layer, and the thickness value of the TSV inner film layer can be obtained through fitting according to a multi-reflection optical model by utilizing the measured light information. And calculating the thickness value of the TSV lining layer by utilizing the reflectance fitting of the regression light wave.
In some embodiments, step 1 is preceded by a step.
And step 0, establishing optical propagation models of the silicon through hole lining layers with different thicknesses, wherein the optical propagation models are established according to the incident position and the incident angle of the light wave and the geometric structure parameters of the silicon through hole to be detected.
And establishing a mathematical mapping relation between TSV reflected light and the thickness of the lining layer by using the TSV internal light beam propagation characteristics and the lining layer film model, so as to establish an optical propagation model. For the aspect of analysis of the propagation characteristics of the measuring beams in the TSV, the relation between the reflection propagation and the incidence angle of the measuring beams in the TSV is analyzed according to the geometric structure information of the diameter, the depth, the side wall angle, the hole bottom profile and the like of the TSV to be measured, a geometric optical propagation model of the measuring beams at different incidence angles and positions through the TSV is established, and a reflectivity mathematical model of the TSV inner liner layer to the measuring beams is established.
In some embodiments, step 3 comprises three steps.
Step 31, obtaining the reflectivities of the regression light waves corresponding to the incident light waves with different wavelengths, and constructing a graph of the wavelength of the incident light waves and the reflectivity of the regression light waves; the wavelength range of the incident light wave is 400nm-750 nm;
and step 32, inquiring the optical propagation model matched with the graph according to the graph, and reading the thickness of the lining layer in the matched optical propagation model to obtain the thickness of the silicon perforated lining layer.
And step 33, when the optical propagation model matched with the curve graph is not inquired, detecting and adjusting the incident position or the incident angle of the incident light wave until the curve graph of the output regression light wave has the matched optical propagation model.
When a reflectivity mathematical model of the TSV inner liner layer to the measuring light beam is established, firstly, a reflectivity mathematical model of each corresponding position where the measuring light beam is reflected in the TSV is established according to information such as the incident angle of the measuring light beam formed by aperture regulation and control, optical parameters of the TSV inner liner layer and the like; and then carrying out numerical multiplication on all the reflectivities, and carrying out numerical simulation calculation on the total reflectivity of the TSV lining layer to the current incident light beam.
In some embodiments, the reflectivity in step 3 is calculated from the intensity of the returning light wave and the intensity of the incident light wave, wherein R is λ ＝I λo /I λi ，I λo Indicating the intensity of the returning light wave, I λi Representing the intensity of the incident light wave.
When performing optical diffraction calculation on the optical characteristics of the inner lining layer, the relative energy of diffraction orders and the propagation direction thereof need to be considered, and the diffraction orders with lower energy can be ignored to simplify the propagation characteristic analysis of the measuring beam. An ideal TSV inner liner layer is taken as an example, and the optical response research idea of the TSV hole wall film layer is explained.
FIG. 2 is a transmission diagram schematically illustrating refraction and reflection of light waves in a through-silicon-via liner layer to be tested according to an embodiment of the disclosure.
Fig. 3 schematically illustrates a schematic diagram of incident light waves propagating geometrically inside a TSV according to an embodiment of the present disclosure.
According to the geometric structure parameters of the through silicon hole to be measured, a one-to-one model graph of the inner aperture of the through silicon hole to be measured can be drawn, and then according to the incident position and the incident angle of the light wave, an optical propagation model R can be established according to the following formula (1) General assembly 。
R General assembly ＝R 1 R 2 …R m ； (1)
Wherein, as shown in FIG. 3, m is 3, R 1 ～R 3 The single reflectivity of the light wave in the through silicon via at 1 st to 3 rd reflection can be obtained according to the formula (2).
Where r represents the interface reflection coefficient, which is related to the refractive index n of the medium and the angle of incidence of the light
It is related. As shown in FIG. 2, r i12 The reflection coefficient of the interface between the air and the lining layer when the light is reflected for the ith time; r is i23 The light is at the ith timeThe reflection coefficient of the interface of the lining layer and the silicon substrate during reflection; d 2 Is the thickness of the lining layer, lambda is the wavelength of the measuring light,
is the angle of refraction of the light in the inner layer; e is a natural constant, j is an imaginary unit, and β is the optical path thickness of the liner layer, which is obtained by the formula (3).
Wherein n is 2 Is the refractive index of the medium of the liner layer.
According to the formula (1), the numerical relationship between the thicknesses of the inner liners and the total reflectivity of the TSV can be calculated, the measurement scheme and the measurement parameters of the high sensitivity of the thicknesses of the inner liners are discussed, and the optical propagation models of the silicon perforated inner liners with different thicknesses are established.
In some embodiments, step 2 further comprises detecting a transmission coefficient of the light intensity measuring device, and modifying the reflectivity by the transmission coefficient of the light intensity measuring device.
Numerical simulation of reflectivity of each position in TSV is carried out by taking an air-lining layer-Si substrate three-phase optical structure as an example, and SiO of the lining layer 2 The thermal oxidation layer is used, the incidence angle theta of a measuring light beam is 15 degrees, the angle of the side wall of the TSV is 90 degrees, the outline of the bottom of the TSV is an arc surface which is symmetrical about an optical axis, and the depth-diameter ratio of the TSV is about 3: 1. The graph of the total reflectance of the TSV as a function of the wavelength of light when the thickness of the liner layer is varied over the (100nm, 1000nm) range is shown in fig. 4. Fig. 4 is a graph illustrating the reflectance of the returning light wave and the wavelength of the incident light wave for the inner liners of different thicknesses.
In some embodiments, the incident light waves are condensed into a light beam; the cross-sectional outline of the light beam is the same as the cross-sectional outline of the through-silicon via.
The light beams with different cross sections, such as annular light beams with oval, triangular, square and polygonal cross sections, scattered point patterns with patterned or random distribution cross sections and the like are formed by adjusting the phase modulation patterns of the spatial light modulator, so that the method is suitable for measuring the thickness of the silicon perforated lining layer with different cross sections.
According to the method, a novel high-precision nondestructive measurement method for the thickness of the TSV lining layer is developed through principle research, method innovation and research and development of a measurement principle verification device, the blank of a high-end optical detection technology in the field of China is filled, and technical support is provided for the manufacturing process of an integrated circuit in China.
The above embodiments are provided to further explain the purpose, technical solutions and advantages of the present disclosure in detail, and it should be understood that the above embodiments are merely exemplary of the present disclosure and are not intended to limit the present disclosure, and any modifications, equivalents, improvements, etc. made within the spirit and principle of the present disclosure should be included in the scope of the present disclosure.
Claims (10)
1. A method for measuring the thickness of a silicon through hole liner is characterized by comprising the following steps:
s1, obliquely injecting a light wave to the side wall of the through silicon hole to be detected, and obtaining a returned regression light wave in the through silicon hole to be detected;
s2, calculating the reflectivity based on the light intensity of the regression light wave;
and S3, obtaining the thickness of the silicon through hole lining layer according to the reflectivity of the regression light wave, the wavelength of the incident light wave and the optical propagation model of the silicon through hole.
2. The method of measuring the thickness of a silicon perforated liner as set forth in claim 1, further comprising, before S1:
and S0, establishing optical propagation models of the silicon through hole lining layers with different thicknesses.
3. The method for measuring the thickness of the inner liner of the through silicon via according to claim 2, wherein the optical propagation model is constructed according to the incident position and the incident angle of the light wave and the geometric structure parameters of the through silicon via to be measured.
4. The method of measuring a thickness of a perforated silicon liner as recited in claim 3, wherein S3 comprises:
s31, obtaining the reflectance of the regression light wave corresponding to the incident light wave with different wavelengths, and constructing a curve graph of the wavelength of the incident light wave and the reflectance of the regression light wave;
and S32, querying the optical propagation library model matched with the curve graph according to the curve graph, and reading the thickness of the lining layer in the matched optical propagation model to obtain the thickness of the silicon-perforated lining layer.
5. The method of claim 1, wherein the reflectivity in S3 is calculated from the intensity of the regression light wave and the intensity of the incident light wave, wherein R is the ratio of the reflectance to the reflectance λ ＝I λo /I λi ，I λo Indicating the intensity of the returning light wave, I λi Representing the intensity of the incident light wave.
6. The method of measuring a thickness of a perforated silicon liner as recited in claim 1, wherein S2 further comprises:
and detecting the light transmission coefficient of the light intensity measuring device, and correcting the reflectivity through the light transmission coefficient of the light intensity measuring device.
7. The method of claim 1, wherein the incident light waves are focused into a light beam; the cross-sectional outer contour of the light beam is the same as the cross-sectional outer contour of the through-silicon via.
8. The method of measuring a thickness of a perforated silicon liner as recited in claim 1, comprising:
when the material used by the lining layer is a transparent material, the optical propagation model in the S2 adopts an optical Cauchy dispersion model and a Sellmeier model;
when the material used by the lining layer is a partially transparent or opaque material, the optical propagation model in S2 adopts a partial absorption or complete absorption corresponding optical resonator model and equation.
9. The method of measuring a thickness of a perforated silicon liner as recited in claim 4, further comprising:
and S33, when the optical propagation model matched with the curve graph is not inquired, detecting and adjusting the incident position or the incident angle of the incident light wave until the curve graph of the output regression light wave has the matched optical propagation model.
10. The method of claim 4, wherein the incident light wave has a wavelength in a range of 400nm to 700 nm.
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